CN103336013A - Photoacoustic detection device for bonding strength of photosensitive chip in sealing environment - Google Patents
Photoacoustic detection device for bonding strength of photosensitive chip in sealing environment Download PDFInfo
- Publication number
- CN103336013A CN103336013A CN2013102520203A CN201310252020A CN103336013A CN 103336013 A CN103336013 A CN 103336013A CN 2013102520203 A CN2013102520203 A CN 2013102520203A CN 201310252020 A CN201310252020 A CN 201310252020A CN 103336013 A CN103336013 A CN 103336013A
- Authority
- CN
- China
- Prior art keywords
- photosensor chip
- bonding strength
- laser
- detection device
- photo
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
Abstract
The invention discloses a photoacoustic detection device for the bonding strength of a photosensitive chip in a sealing environment. The photoacoustic detection device comprises a pulse laser device, a beam splitter mirror, a long-focus-length focusing lens, a color selective mirror, a high-precision delaying device, an optical interference two-dimensional face receiving sensor and an electronic computer, wherein the optical interference two-dimensional face receiving sensor comprises an He-Ne laser device, a beam-expanding collimation device, a reflection mirror, a flat convex lens and a high-pixel and high-seed CCD (Charge Coupled Device). The photoacoustic detection device disclosed by the invention is high in measurement precision, high in resolution ratio and lossless, and can rapidly detect the bonding strength of the photosensitive chip in the sealing environment of a light window.
Description
Technical field
The invention belongs to the photo-acoustic detection field, particularly the photo-acoustic detection device of photosensor chip bonding strength in a kind of sealed environment.
Background technology
Semiconductor photo detector because of its have that volume is little, in light weight, cost is low, function is many, response speed is fast, highly sensitive, be easy in military affairs and national economy every field, obtain widespread use with incomparable advantage such as other semiconductor devices is integrated, bringing into play very important effect.Along with the development of weapons, aerospace technology, the application of photodetector has been penetrated into the detection equipment of target-seeking device, target seeker, influence fuse, altimeter and the aerospace field of SMART AMMUNITION.In these use occasions, semiconductor photo detector will run into the strong vibration of thump and the flight course of emission process, if this moment, photodetector inside existed the bonding strength of photosensor chip not enough, will directly cause coming off or the quick decline of electrical property of photosensor chip, cause the inefficacy of whole Photodetection system, this inefficacy is fatal often, might cause whole intelligent weapons inefficacy, loss of spacecraft and air equipment accident etc.For this reason, in weapons, aerospace field, product reliability is a very important index, it extends through whole processes such as product design, screening, detection and checking, the application in these fields has high requirement to the photodetector reliability, has clearly proposed to carry out in the device aspect requirement of intensity screening and anti high overload checking.Present main means are that centrifugal test is rejected the fault sample, but this method criterion is fuzzy, poor reliability, may introduce new mechanics damage, and making still has the intensity of higher proportion to lose efficacy through the detector after the screening.A large number of experiments show that, homemade certain type photodetector is coming off (structural strength inefficacys) through still occur about 10% photosurface after the anti high overload Design of Reinforcement in the centrifugal screening test, and still has a certain amount of detector above-mentioned intensity fault to occur after centrifugal intensity screens.Actual anatomical results shows that this intensity and structural inefficacy (photosurface comes off) are by the production technology discreteness, causes existing bonding strength to cause inadequately between photosensor chip, adhesive linkage (silver slurry or conducting resinl) and the pedestal.Therefore, need develop the noncontact nondestructiving detecting means that a kind of silicon photosensor chip bonding strength in a hurry, can remove complicated centrifugal intensity shaker test from, and can reject highly reliably and have the photosensor chip bonding strength inadequately or the sensitive detection parts of bonding defect, make photodetector in thump and strong vibration environment, the photosensor chip obscission can not occur, guarantee the high reliability running of photodetection equipment in weapons, the aerospace field.
Ultrasonic non-destructive inspection techniques be a kind of detect reliable, measure rapidly, be convenient to online use, harmless detection technique, thereby in fault in material detects, use widely, and developed and set up various supersonic detection devices and system.Patent No. 200410073690.X discloses a kind of ultrasonic testing system, name is called: " a kind of new type ultrasonic pick-up unit and detection method ", it is mainly by ultrasonic listening and linkage, transmitting/receiving circuit, control/processing unit, display and man-machine dialogue interface.Adopt piezoelectric transducer to excite and receiving trap as hyperacoustic in this device, this method is the defective in the detecting material simply and effectively.But this device is difficult to use in the detection of semiconductor photo detector photosensor chip bonding strength.This is because the special construction of semiconductor photo detector.On the one hand, photosensor chip is sealed in the metal or ceramic package that has optical window, and acoustic transducer can't be close to the photosensor chip surface by couplant, thereby can't be coupled to ultrasound wave on the photosensor chip; The lateral dimension of photosensor chip and adhesive linkage only is the mm magnitude on the other hand, and complex structure, ultrasound wave can't be coupled on the photosensor chip detect.In addition, the ultrasonic frequency that this method inspires is lower, so room and time resolution is low, can't detect tiny flaw, more can't detect the adhesive linkage bonding strength.
Along with the development of Laser Ultrasonic Technique, people such as Hongjoon Kim were at NDT﹠amp in 2006; E International has reported a kind of laser-ultrasound defect detecting system in 39,312.This system adopts short-pulse laser as detecting hyperacoustic excitaton source, and adopt Michelson interferometer to receive the displacement that causes body surface in the ultrasound wave communication process, thereby obtain ultrasound wave waveform and frequency spectrum, and obtain the parameter of defective according to ultrasonic signal.This laser-ultrasound detection system contrast conventional ultrasound technology has tangible advantage: noncontact, resolution are high, thereby can be used for the detection of isotropic material surface imperfection.But this defect detecting system can not transplant to detect the detection of photosensor chip bonding strength in the sealed environment, the following aspects of having traced it to its cause: (1) photosensor chip is anisotropic material, and photosensor chip-adhesive linkage-pedestal is a complication system, need obtain the ultrasonic signal that laser excites in different directions, could determine bonding strength information, that is to say, the ultrasonic field that need obtain on whole of the photosensor chip distributes, this just requires this system to scan material surface, obtain the ultrasonic signal at diverse location place, to cause to realize fast detecting, and scanning need repeatedly excitation ultrasound ripple of laser, this will cause damage to photosensor chip easily; (2) this system architecture lateral dimension of not being suitable for semiconductor photo detector and so on only is the detection of mm magnitude; What (3) this system architecture detected is the surface wave signal, and surface wave only is fit to detect surface imperfection, is not suitable for the detection of adhesive linkage defective, more is not suitable for bonding strength and detects.Therefore, the noncontact Dynamic Non-Destruction Measurement of development semiconductor photosensitive die bonding intensity has become the great difficult problem that photodetector and laser-ultrasound detection technique field need to be resolved hurrily.
Summary of the invention
The object of the present invention is to provide a kind of measuring accuracy height, resolution height, harmless, can fast detecting band optical window sealed environment in the device of photosensor chip bonding strength.
The technical solution that realizes the object of the invention is:
The photo-acoustic detection device of photosensor chip bonding strength in a kind of sealed environment comprises pulsed laser, spectroscope, long-focus condenser lens, dichronic mirror, high precision time-delay mechanism, optical interference two-dimensional surface receiving sensor, robot calculator; Wherein, pulsed laser, spectroscope, long-focus condenser lens, dichronic mirror are coaxial, the light source that pulsed laser sends through the light splitting of spectroscope reflecting part to the high precision time-delay mechanism, remaining light is after the focusing of long-focus condenser lens and dichronic mirror reflection, incide adhesives to be checked surface, high precision time-delay mechanism output terminal links to each other with the receiving end of optical interference two-dimensional surface receiving sensor, and the output terminal of two-dimensional surface receiving sensor links to each other with robot calculator.
Described optical interference two-dimensional surface receiving sensor comprises the He-Ne laser instrument, the beam-expanding collimation device, catoptron, plano-convex lens, high pixel high-speed CCD, wherein, the He-Ne laser instrument, the beam-expanding collimation device, catoptron is coaxial, catoptron, plano-convex lens is coaxial, the laser beam of He-Ne laser emitting becomes monochromatic collimated beam behind the beam-expanding collimation device, behind 45 ° of catoptrons and plano-convex lens, incide adhesives to be checked again, the relevant interference image that forms of two-beam through plano-convex lens convex surface and the reflection of photosensor chip surface, by high pixel CCD record, the output terminal of high pixel CCD links to each other with robot calculator.
The present invention compared with prior art, its remarkable advantage:
1, the laser excitation of the present invention's supersonic guide-wave in photosensor chip-adhesive linkage-base material and optics receive and realize coaxial by dichronic mirror.This coaxial mode make excitation laser and exploring laser light can be simultaneously optical window by the cm magnitude incide the photosensor chip surface, thereby make laser-ultrasound can be applied to the detection of photosensor chip bonding strength in the sealed environment.
2, the present invention is easy to inspire ultrasound wave owing to pulse laser can pool very little luminous point in small-size materials, thereby can realize the detection of bonding strength in the small-size materials.
3, the present invention is because laser-ultrasound has very wide frequency band, and this makes it have very high detection sensitivity, thereby can detect bonding strength.
4, optical interference two-dimensional surface receiving sensor of the present invention easily regulate, the resolution height, and the two-dimensional surface that can realize ultrasonic field receives, need not scanning when therefore detecting, fast detecting can be realized, the fast detecting of photosensor chip bonding strength in the such sealed environment of photodetector can be widely used in.
Below in conjunction with accompanying drawing the present invention is described in further detail.
Description of drawings
Fig. 1 is the structural representation of the photo-acoustic detection device of photosensor chip bonding strength in the sealed environment of the present invention.
Fig. 2 is the structural representation of optical interference two-dimensional surface receiving sensor in the photo-acoustic detection device of photosensor chip bonding strength in the sealed environment of the present invention.
Embodiment
The photo-acoustic detection device of photosensor chip bonding strength in a kind of sealed environment of the present invention comprises pulsed laser 101, spectroscope 102, long-focus condenser lens 103, dichronic mirror 104, high precision time-delay mechanism 106, optical interference two-dimensional surface receiving sensor 107, robot calculator 108; Wherein, pulsed laser 101, spectroscope 102, long-focus condenser lens 103, dichronic mirror 104 are coaxial, the light source that pulsed laser 101 sends through spectroscope 102 reflecting part light splitting to high precision time-delay mechanism 106, remaining light is after 103 focusing of long-focus condenser lens and dichronic mirror 104 reflections, incide adhesives to be checked 105 surfaces, high precision time-delay mechanism 106 output terminals link to each other with the receiving end of optical interference two-dimensional surface receiving sensor 107, and the output terminal of two-dimensional surface receiving sensor 107 links to each other with robot calculator 108; Wherein, described optical interference two-dimensional surface receiving sensor 107 comprises He-Ne laser instrument 201, beam-expanding collimation device 202, catoptron 203, plano-convex lens 204, high pixel high-speed CCD 205, wherein, He-Ne laser instrument 201, beam-expanding collimation device 202, catoptron 203 is coaxial, catoptron 203, plano-convex lens 204 is coaxial, He-Ne laser instrument 201 emitting laser bundles become monochromatic collimated beam behind beam-expanding collimation device 202, behind 45 ° of catoptrons 203 and plano-convex lens 204, incide adhesives 105 to be checked again, the relevant interference image that forms of two-beam through plano-convex lens 204 convex surfaces and the reflection of photosensor chip surface, by high-speed CCD 205 records, the output terminal of high-speed CCD 205 links to each other with robot calculator 108.
Wavelength 266nm ~ the 1064nm of described pulsed laser 101, pulsewidth 2ns ~ 10ns, energy 10mJ ~ 30mJ.
Described spectroscope 102 splitting ratio 1:10 ~ 5:5.
Focal length 15cm ~ the 30cm of described long-focus condenser lens 103.
The light reflection of described dichronic mirror 104 paired pulses exciting light devices 101 emissions is to the detection light transmission of He-Ne continuous wave laser 201 emissions.
Described high precision time-delay mechanism 106 delay precisions are 10ps ~ 100ps.
The energy of described He-Ne continuous wave laser 201 is 2mJ ~ 5mJ.
The time shutter of described high-speed CCD 205 is 2ns ~ 8ns.
One of feature of the present invention is that the laser excitation of supersonic guide-wave in the detected materials (photosensor chip 301-adhesive linkage 302-base material 303) and optics receive by dichronic mirror 104 realizations coaxial.This coaxial mode make excitation laser and exploring laser light can be simultaneously optical window by the cm magnitude incide the photosensor chip surface, thereby make laser-ultrasound might be applied to the detection of photosensor chip bonding strength in the sealed environment.
Two of feature of the present invention is that receiving sensor adopts optical interference techniques, and it is made up of He-Ne laser instrument 201, beam-expanding collimation device 202, catoptron 203, plano-convex lens 204.Behind the exploring laser light bundle process beam-expanding collimation device 202 of He-Ne laser instrument 201 outgoing, through 203 reflections of 45 ° of catoptrons, pass through dichronic mirror 104, plano-convex lens 204 again, optical window 109 by photodetector incides photosensor chip 301 surfaces, detecting light beam interferes mutually through the two-beam of plano-convex lens 204 convex surfaces and photosensor chip 301 surface reflections, the interference image that forms is received by high-speed CCD 205, is input in the robot calculator 108.This optical interference two-dimensional surface receiving sensor 107 has advantage easy to adjust, that resolution is high, and can one-shot measurement obtain the supersonic guide-wave that excitation laser excites and cause photosensor chip 301 surperficial miniature deformations in photosensor chip 301-adhesive linkage 302-base material 303, and can obtain the propagation characteristic of ultrasonic field in system, and then obtain 301 whole last bonding strength information of photosensor chip.Therefore this device does not need to scan in testing process, thereby can realize fast detecting.
The present invention utilizes through inspiring the supersonic guide-wave of high power, narrow-band in the photosensor chip 301-adhesive linkage 302-base material 303 of pulse laser in being full of inert gas band optical window sealed environment of intensity modulated, obtains photosensor chip 301 bonding strength information according to the propagation characteristic of supersonic guide-wave in material.With the receiving trap of optical interference two-dimensional surface receiving sensor 107 as supersonic guide-wave, the ultrasonic guided wave signals that records transfers in the robot calculator 108, carries out computing by program, thereby realizes the detection of photosensor chip 301 bonding strengths in the sealed environment.Its concrete course of work is: the laser beam of being sent by pulsed laser 101, after intensity modulated, pass through high precision time-delay mechanism 106 as the trigger pip of optical interference two-dimensional surface receiving sensor 107 through spectroscope 102 reflecting part light splitting again, all the other light are through long-focus condenser lens 103, the optical window 109 that passes photodetector again after dichronic mirror 104 reflections incides photosensor chip 301 centre of surfaces, inspires supersonic guide-wave in photosensor chip 301-adhesive linkage 302-base material 303.Since the propagation characteristic of supersonic guide-wave in adhesives not only with the material acoustics relating to parameters, also relevant with bonding interface quality (bonding strength power) simultaneously, at this moment, obtain ultrasonic guided wave signals by optical interference two-dimensional surface receiving sensor 107, the interference image that forms records and is transferred on the robot calculator 108 by high-speed CCD 205, estimated information such as dispersion curve, phase velocity of wave, amplitude, decay by the ultrasonic guided wave signals that obtains, come the inverting interfacial adhesion strength according to dispersion curve again.
Embodiment 1:
As depicted in figs. 1 and 2: the photo-acoustic detection device of photosensor chip bonding strength in a kind of sealed environment, comprise that wavelength is that 1064nm, pulsewidth are that 10nm, monopulse output energy are the short-pulse laser of 12mJ, splitting ratio is the spectroscope 102 of 1:10, focal length is the long-focus condenser lens 103 of 20cm, to the reflection of the light of 266nm, to the light transmissive dichronic mirror 104 of 632.8nm, delay precision is the high precision time-delay mechanism 106 of 50ps, optical interference two-dimensional surface receiving sensor 107, robot calculator 108; Wherein, by pulsed laser 101, spectroscope 102, long-focus condenser lens 103, adhesives 105(photodetector to be checked) form the excitation portion of supersonic guide-wave, formed the receiving unit of supersonic guide-wave by optical interference two-dimensional surface receiving sensor 107 and robot calculator 108.
As shown in Figure 1: pulsed laser 101, spectroscope 102, long-focus condenser lens 103, dichronic mirror 104 are coaxial, spectroscope 102 and long-focus condenser lens 103 are arranged on the same light path, and the reflected light path of spectroscope 102 is provided with high precision time-delay mechanism 106; The laser beam that pulsed laser 101 sends, and is converted into electric signal and transfers to optics two-dimensional surface receiving sensor 107 after 106 time-delays of high precision time-delay mechanism through the part light of spectroscope 102 reflection, as the trigger pip of the startup record of receiving sensor 107.Remaining light is through long-focus condenser lens 103, and through dichronic mirror 104 reflections, the optical window that passes photodetector 105 to be checked incides on photosensor chip 301 surfaces, inspires supersonic guide-wave in photosensor chip 301-adhesive linkage 302-base material 303 again.Supersonic guide-wave is received by optical interference two-dimensional surface receiving sensor 107, and is input in the robot calculator 108.
As shown in Figure 2: described optical interference two-dimensional surface receiving sensor 107 comprises that energy is the He-Ne laser instrument 201 of 2mJ, beam-expanding collimation device 202, catoptron 203, plano-convex lens 204, time shutter is the high-speed CCD 205 of 2ns, wherein, He-Ne laser instrument 201, beam-expanding collimation device 202, catoptron 203 is coaxial, catoptron 203, plano-convex lens 204 is coaxial, the continuous He-Ne laser of its outgoing is through inciding behind the beam-expanding collimation device 202 on 45 ° of catoptrons 203, after catoptron 203 reflections, incide the photosensor chip surface by dichronic mirror 104 and the plano-convex lens 204 that is close to material to be checked (photodetector) 105 again, the interference image that the two-beam of plano-convex lens 204 convex surfaces and the reflection of photosensor chip surface forms is input in the robot calculator 108 after being recorded by high-speed CCD 205.He-Ne laser becomes monochromatic collimated beam behind beam-expanding collimation device 202, incide photosensor chip 301 surfaces through plano-convex lens 204 again, then the two-beam through plano-convex lens 204 convex surfaces and photosensor chip 301 surface reflections just produces optical path difference, they are after the convex surface place of plano-convex lens 204 meets, to interfere, form interference image.When laser that pulsed laser 101 sends at adhesives 105(photodetector to be checked) photosensor chip 301-adhesive linkage 302-base material 303 in during the excitation ultrasound guided wave, the propagation of supersonic guide-wave in adhesives 105 to be checked will cause that miniature deformation takes place on photosensor chip 301 surfaces, and the deformation (displacement) on photosensor chip 301 surfaces can change the optical path difference that the two-beam through reflecting produces, and then change interference fringe (image), calculate the information that can obtain supersonic guide-wave by program according to the variation of interference image.Above-mentioned adhesives to be checked 105 is sealed in the adhesives of band optical window 109 as checked object, is photosensor chip 301-adhesive linkage 302-base material 303 in the photodetector.
Embodiment 2:
As depicted in figs. 1 and 2: the photo-acoustic detection device of photosensor chip bonding strength in a kind of sealed environment, comprise that wavelength is that 1064nm, pulsewidth are that 10nm, monopulse output energy are the short-pulse laser of 20mJ, splitting ratio is the spectroscope 102 of 1:10, focal length is the long-focus condenser lens 103 of 20cm, to the reflection of the light of 1064nm, to the light transmissive dichronic mirror 104 of 632.8nm, delay precision is the high precision time-delay mechanism 106 of 50ps, optical interference two-dimensional surface receiving sensor 107, robot calculator 108; Wherein, by pulsed laser 101, spectroscope 102, long-focus condenser lens 103, adhesives 105(photodetector to be checked) form the excitation portion of supersonic guide-wave, formed the receiving unit of supersonic guide-wave by optical interference two-dimensional surface receiving sensor 107 and robot calculator 108.
As shown in Figure 1: pulsed laser 101, spectroscope 102, long-focus condenser lens 103, dichronic mirror 104 are coaxial, spectroscope 102 and long-focus condenser lens 103 are arranged on the same light path, and the reflected light path of spectroscope 102 is provided with high precision time-delay mechanism 106; The laser beam that pulsed laser 101 sends, and is converted into electric signal and transfers to optics two-dimensional surface receiving sensor 107 after 106 time-delays of high precision time-delay mechanism through the part light of spectroscope 102 reflection, as the trigger pip of the startup record of receiving sensor 107.Remaining light is through long-focus condenser lens 103, and through dichronic mirror 104 reflections, the optical window that passes photodetector 105 to be checked incides on photosensor chip 301 surfaces, inspires supersonic guide-wave in photosensor chip 301-adhesive linkage 302-base material 303 again.Supersonic guide-wave is received by optical interference two-dimensional surface receiving sensor 107, and is input in the robot calculator 108.
As shown in Figure 2: described optical interference two-dimensional surface receiving sensor 107 comprises that energy is the He-Ne laser instrument 201 of 2mJ, beam-expanding collimation device 202, catoptron 203, plano-convex lens 204, time shutter is the high-speed CCD 205 of 2ns, wherein, He-Ne laser instrument 201, beam-expanding collimation device 202, catoptron 203 is coaxial, catoptron 203, plano-convex lens 204 is coaxial, the continuous He-Ne laser of its outgoing is through inciding behind the beam-expanding collimation device 202 on 45 ° of catoptrons 203, after catoptron 203 reflections, incide the photosensor chip surface by dichronic mirror 104 and the plano-convex lens 204 that is close to material to be checked (photodetector) 105 again, the interference image that the two-beam of plano-convex lens 204 convex surfaces and the reflection of photosensor chip surface forms is input in the robot calculator 108 after being recorded by high-speed CCD 205.He-Ne laser becomes monochromatic collimated beam behind beam-expanding collimation device 202, incide photosensor chip 301 surfaces through plano-convex lens 204 again, then the two-beam through plano-convex lens 204 convex surfaces and photosensor chip 301 surface reflections just produces optical path difference, they are after the convex surface place of plano-convex lens 204 meets, to interfere, form interference image.When laser that pulsed laser 101 sends at adhesives 105(photodetector to be checked) photosensor chip 301-adhesive linkage 302-base material 303 in during the excitation ultrasound guided wave, the propagation of supersonic guide-wave in adhesives 105 to be checked will cause that miniature deformation takes place on photosensor chip 301 surfaces, and the deformation (displacement) on photosensor chip 301 surfaces can change the optical path difference that the two-beam through reflecting produces, and then change interference fringe (image), calculate the information that can obtain supersonic guide-wave by program according to the variation of interference image.Above-mentioned adhesives to be checked 105 is sealed in the adhesives of band optical window 109 as checked object, is photosensor chip 301-adhesive linkage 302-base material 303 in the photodetector.
Embodiment 3:
As depicted in figs. 1 and 2: the photo-acoustic detection device of photosensor chip bonding strength in a kind of sealed environment, comprise that wavelength is that 266nm, pulsewidth are that 2nm, monopulse output energy are the pulsed laser 101 of 30mJ, splitting ratio is the spectroscope 102 of 1:5, focal length is the long-focus condenser lens 103 of 15cm, to the reflection of the light of 266nm, to the light transmissive dichronic mirror 104 of 632.8nm, delay precision is the high precision time-delay mechanism 106 of 100ps, optical interference two-dimensional surface receiving sensor 107, robot calculator 108; Wherein, by pulsed laser 101, spectroscope 102, long-focus condenser lens 103, adhesives 105(photodetector to be checked) form the excitation portion of supersonic guide-wave, formed the receiving unit of supersonic guide-wave by optical interference two-dimensional surface receiving sensor 107 and robot calculator 108.
As shown in Figure 1: pulsed laser 101, spectroscope 102, long-focus condenser lens 103, dichronic mirror 104 are coaxial, spectroscope 102 and long-focus condenser lens 103 are arranged on the same light path, and the reflected light path of spectroscope 102 is provided with high precision time-delay mechanism 106; The laser beam that pulsed laser 101 sends, and is converted into electric signal and transfers to optics two-dimensional surface receiving sensor 107 after 106 time-delays of high precision time-delay mechanism through the part light of spectroscope 102 reflection, as the trigger pip of the startup record of receiving sensor 107.Remaining light is through long-focus condenser lens 103, and through dichronic mirror 104 reflections, the optical window that passes photodetector 105 to be checked incides on photosensor chip 301 surfaces, inspires supersonic guide-wave in photosensor chip 301-adhesive linkage 302-base material 303 again.Supersonic guide-wave is received by optical interference two-dimensional surface receiving sensor 107, and is input in the robot calculator 108.
As shown in Figure 2: described optical interference two-dimensional surface receiving sensor 107 comprises that energy is the He-Ne laser instrument 201 of 3mJ, beam-expanding collimation device 202, catoptron 203, plano-convex lens 204, time shutter is the high-speed CCD 205 of 8ns, wherein, He-Ne laser instrument 201, beam-expanding collimation device 202, catoptron 203 is coaxial, catoptron 203, plano-convex lens 204 is coaxial, the continuous He-Ne laser of its outgoing is through inciding behind the beam-expanding collimation device 202 on 45 ° of catoptrons 203, after catoptron 203 reflections, incide the photosensor chip surface by dichronic mirror 104 and the plano-convex lens 204 that is close to material to be checked (photodetector) 105 again, the interference image that the two-beam of plano-convex lens 204 convex surfaces and the reflection of photosensor chip surface forms is input in the robot calculator 108 after being recorded by high-speed CCD 205.He-Ne laser becomes monochromatic collimated beam behind beam-expanding collimation device 202, incide photosensor chip 301 surfaces through plano-convex lens 204 again, then the two-beam through plano-convex lens 204 convex surfaces and photosensor chip 301 surface reflections just produces optical path difference, they are after the convex surface place of plano-convex lens 204 meets, to interfere, form interference image.When laser that pulsed laser 101 sends at adhesives 105(photodetector to be checked) photosensor chip 301-adhesive linkage 302-base material 303 in during the excitation ultrasound guided wave, the propagation of supersonic guide-wave in adhesives 105 to be checked will cause that miniature deformation takes place on photosensor chip 301 surfaces, and the deformation (displacement) on photosensor chip 301 surfaces can change the optical path difference that the two-beam through reflecting produces, and then change interference fringe (image), calculate the information that can obtain supersonic guide-wave by program according to the variation of interference image.Above-mentioned adhesives to be checked 105 is sealed in the adhesives of band optical window 109 as checked object, is photosensor chip 301-adhesive linkage 302-base material 303 in the photodetector.
Embodiment 4:
As depicted in figs. 1 and 2: the photo-acoustic detection device of photosensor chip bonding strength in a kind of sealed environment, comprise that wavelength is that 532nm, pulsewidth are that 5nm, monopulse output energy are the pulsed laser 101 of 10mJ, splitting ratio is the spectroscope 102 of 1:1, focal length is the long-focus condenser lens 103 of 30cm, to the reflection of the light of 532nm, to the light transmissive dichronic mirror 104 of 632.8nm, delay precision is the high precision time-delay mechanism 106 of 10ps, optical interference two-dimensional surface receiving sensor 107, robot calculator 108; Wherein, by pulsed laser 101, spectroscope 102, long-focus condenser lens 103, adhesives 105(photodetector to be checked) form the excitation portion of supersonic guide-wave, formed the receiving unit of supersonic guide-wave by optical interference two-dimensional surface receiving sensor 107 and robot calculator 108.
As shown in Figure 1: pulsed laser 101, spectroscope 102, long-focus condenser lens 103, dichronic mirror 104 are coaxial, spectroscope 102 and long-focus condenser lens 103 are arranged on the same light path, and the reflected light path of spectroscope 102 is provided with high precision time-delay mechanism 106; The laser beam that pulsed laser 101 sends, and is converted into electric signal and transfers to optics two-dimensional surface receiving sensor 107 after 106 time-delays of high precision time-delay mechanism through the part light of spectroscope 102 reflection, as the trigger pip of the startup record of receiving sensor 107.Remaining light is through long-focus condenser lens 103, and through dichronic mirror 104 reflections, the optical window that passes photodetector 105 to be checked incides on photosensor chip 301 surfaces, inspires supersonic guide-wave in photosensor chip 301-adhesive linkage 302-base material 303 again.Supersonic guide-wave is received by optical interference two-dimensional surface receiving sensor 107, and is input in the robot calculator 108.
As shown in Figure 2: described optical interference two-dimensional surface receiving sensor 107 comprises that energy is the He-Ne laser instrument 201 of 5mJ, beam-expanding collimation device 202, catoptron 203, plano-convex lens 204, time shutter is the high-speed CCD 205 of 5ns, wherein, He-Ne laser instrument 201, beam-expanding collimation device 202, catoptron 203 is coaxial, catoptron 203, plano-convex lens 204 is coaxial, the continuous He-Ne laser of its outgoing is through inciding behind the beam-expanding collimation device 202 on 45 ° of catoptrons 203, after catoptron 203 reflections, incide the photosensor chip surface by dichronic mirror 104 and the plano-convex lens 204 that is close to material to be checked (photodetector) 105 again, the interference image that the two-beam of plano-convex lens 204 convex surfaces and the reflection of photosensor chip surface forms is input in the robot calculator 108 after being recorded by high-speed CCD 205.He-Ne laser becomes monochromatic collimated beam behind beam-expanding collimation device 202, incide photosensor chip 301 surfaces through plano-convex lens 204 again, then the two-beam through plano-convex lens 204 convex surfaces and photosensor chip 301 surface reflections just produces optical path difference, they are after the convex surface place of plano-convex lens 204 meets, to interfere, form interference image.When laser that pulsed laser 101 sends at adhesives 105(photodetector to be checked) photosensor chip 301-adhesive linkage 302-base material 303 in during the excitation ultrasound guided wave, the propagation of supersonic guide-wave in adhesives 105 to be checked will cause that miniature deformation takes place on photosensor chip 301 surfaces, and the deformation (displacement) on photosensor chip 301 surfaces can change the optical path difference that the two-beam through reflecting produces, and then change interference fringe (image), calculate the information that can obtain supersonic guide-wave by program according to the variation of interference image.Above-mentioned adhesives to be checked 105 is sealed in the adhesives of band optical window 109 as checked object, is photosensor chip 301-adhesive linkage 302-base material 303 in the photodetector.
Claims (8)
1. the photo-acoustic detection device of photosensor chip bonding strength in the sealed environment is characterized in that: comprise pulsed laser (101), spectroscope (102), long-focus condenser lens (103), dichronic mirror (104), high precision time-delay mechanism (106), optical interference two-dimensional surface receiving sensor (107), robot calculator (108); Wherein, pulsed laser (101), spectroscope (102), long-focus condenser lens (103), dichronic mirror (104) is coaxial, the light source that pulsed laser (101) sends arrives on the high precision time-delay mechanism (106) through spectroscope (102) reflecting part light splitting, remaining light is after long-focus condenser lens (103) focusing and dichronic mirror (104) reflection, incide adhesives to be checked (105) surface, high precision time-delay mechanism (106) output terminal links to each other with the receiving end of optical interference two-dimensional surface receiving sensor (107), and the output terminal of two-dimensional surface receiving sensor (107) links to each other with robot calculator (108); Wherein, described optical interference two-dimensional surface receiving sensor (107) comprises He-Ne laser instrument (201), beam-expanding collimation device (202), catoptron (203), plano-convex lens (204), high-speed CCD (205), wherein, He-Ne laser instrument (201), beam-expanding collimation device (202), catoptron (203) is coaxial, catoptron (203), plano-convex lens (204) is coaxial, He-Ne laser instrument (201) emitting laser bundle becomes monochromatic collimated beam behind beam-expanding collimation device (202), behind 45 ° of catoptrons (203) and plano-convex lens (204), incide adhesives to be checked (105) again, the relevant interference image that forms of two-beam through plano-convex lens (204) convex surface and the reflection of photosensor chip surface, by high-speed CCD (205) record, the output terminal of high-speed CCD (205) links to each other with robot calculator (108).
2. the photo-acoustic detection device of photosensor chip bonding strength in a kind of sealed environment according to claim 1 is characterized in that: the wavelength 266nm ~ 1064nm of described pulsed laser (101), pulsewidth 2ns ~ 10ns, energy 10mJ ~ 30mJ.
3. the photo-acoustic detection device of photosensor chip bonding strength in a kind of sealed environment according to claim 1 is characterized in that: described spectroscope (102) splitting ratio 1:10 ~ 1:1.
4. the photo-acoustic detection device of photosensor chip bonding strength in a kind of sealed environment according to claim 1 is characterized in that: the focal length 15cm ~ 30cm of described long-focus condenser lens (103).
5. the photo-acoustic detection device of photosensor chip bonding strength in a kind of sealed environment according to claim 1, it is characterized in that: the light reflection of described dichronic mirror (104) paired pulses exciting light device (101) emission, to the detection light transmission of He-Ne continuous wave laser (201) emission.
6. the photo-acoustic detection device of photosensor chip bonding strength in a kind of sealed environment according to claim 1, it is characterized in that: described high precision time-delay mechanism (106) delay precision is 10ps ~ 100ps.
7. the photo-acoustic detection device of photosensor chip bonding strength in a kind of sealed environment according to claim 1, it is characterized in that: the energy of described He-Ne continuous wave laser (201) is 2mJ ~ 5mJ.
8. the photo-acoustic detection device of photosensor chip bonding strength in a kind of sealed environment according to claim 1, it is characterized in that: the time shutter of described high-speed CCD (205) is 2ns ~ 8ns.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013102520203A CN103336013A (en) | 2013-06-21 | 2013-06-21 | Photoacoustic detection device for bonding strength of photosensitive chip in sealing environment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013102520203A CN103336013A (en) | 2013-06-21 | 2013-06-21 | Photoacoustic detection device for bonding strength of photosensitive chip in sealing environment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103336013A true CN103336013A (en) | 2013-10-02 |
Family
ID=49244217
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013102520203A Pending CN103336013A (en) | 2013-06-21 | 2013-06-21 | Photoacoustic detection device for bonding strength of photosensitive chip in sealing environment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103336013A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103945143A (en) * | 2014-04-25 | 2014-07-23 | 西北核技术研究所 | Signal receiving device capable of widening dynamic range of image sensor |
| CN108888238A (en) * | 2018-05-11 | 2018-11-27 | 南京大学深圳研究院 | A kind of photoacoustic microscope and imaging method based on ultrasonic reflection plate with holes |
| CN109799192A (en) * | 2019-01-18 | 2019-05-24 | 广东工业大学 | A kind of non-contact laser ultrasonic nondestructive testing and method for arbitrary surface |
| CN112285505A (en) * | 2020-10-27 | 2021-01-29 | 国网重庆市电力公司电力科学研究院 | GIS detection imaging device based on laser focusing enhancement technology |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08220075A (en) * | 1994-10-25 | 1996-08-30 | Philips Electron Nv | Non-destructive inspection device of hollow tubular materialbody |
| JPH11173821A (en) * | 1997-12-10 | 1999-07-02 | Yasunaga Corp | Optical inspecting device |
| CN101526483A (en) * | 2009-04-13 | 2009-09-09 | 电子科技大学 | Method for nondestructive examination by photoacoustic interference imaging |
| CN101858890A (en) * | 2010-05-14 | 2010-10-13 | 东南大学 | Detecting system of superficial defects of small-size materials |
-
2013
- 2013-06-21 CN CN2013102520203A patent/CN103336013A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08220075A (en) * | 1994-10-25 | 1996-08-30 | Philips Electron Nv | Non-destructive inspection device of hollow tubular materialbody |
| JPH11173821A (en) * | 1997-12-10 | 1999-07-02 | Yasunaga Corp | Optical inspecting device |
| CN101526483A (en) * | 2009-04-13 | 2009-09-09 | 电子科技大学 | Method for nondestructive examination by photoacoustic interference imaging |
| CN101858890A (en) * | 2010-05-14 | 2010-10-13 | 东南大学 | Detecting system of superficial defects of small-size materials |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103945143A (en) * | 2014-04-25 | 2014-07-23 | 西北核技术研究所 | Signal receiving device capable of widening dynamic range of image sensor |
| CN108888238A (en) * | 2018-05-11 | 2018-11-27 | 南京大学深圳研究院 | A kind of photoacoustic microscope and imaging method based on ultrasonic reflection plate with holes |
| CN109799192A (en) * | 2019-01-18 | 2019-05-24 | 广东工业大学 | A kind of non-contact laser ultrasonic nondestructive testing and method for arbitrary surface |
| CN112285505A (en) * | 2020-10-27 | 2021-01-29 | 国网重庆市电力公司电力科学研究院 | GIS detection imaging device based on laser focusing enhancement technology |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101858890B (en) | Detecting system of superficial defects of small-size materials | |
| CN103162941B (en) | A kind of optical thin film and photoelectric device surface laser device for measuring damage threshold | |
| CN107132029B (en) | Method for simultaneously measuring reflectivity, transmittance, scattering loss and absorption loss of high-reflection/high-transmission optical element | |
| CN101281172A (en) | Laser sonic surface wave stress test system | |
| EP2722639A1 (en) | Method for measuring layer thickness of multilayer ceramic | |
| CN107688051A (en) | A kind of measuring method of the subsurface defect width based on Laser thermo-elastic generated surface acoustic waves | |
| CN102221397B (en) | LSAW positioning measuring system based on Sagnac interferometer | |
| CN105444700A (en) | Multi-wavelength multi-optical axis parallelism detection device and detection method | |
| CN203745385U (en) | Laser ultrasonic optical interference detection device | |
| WO2016090589A1 (en) | Nondestructive measurement method and device for residual stress of laser ultrasonic metal material | |
| CN103336013A (en) | Photoacoustic detection device for bonding strength of photosensitive chip in sealing environment | |
| CN103674359A (en) | Method and device for laser ultrasonic non-destructive testing of residual stress of composite material | |
| Sakamoto et al. | High sensitivity fiber optic angular displacement sensor and its application for detection of ultrasound | |
| CN102012401A (en) | Nondestructive testing method of heterogeneous property of solid material | |
| CN102252828B (en) | Method for monitoring real-time changes in reflectivity of highly reflective optical element under laser irradiation | |
| CN102967281A (en) | System for measuring longitudinal wave thickness of pulse laser | |
| CN1363820A (en) | Short-pulse laser and ultrasonic method and equipment for presisely measuring thickness | |
| CN104819769A (en) | Vibration measurement apparatus based on laser speckle of polarized singular-point light beam | |
| CN109799191A (en) | The optical touchless detection device and method of solid material rough surface acoustic disturbance | |
| CN102636337A (en) | Method for measuring optical fiber dispersion | |
| WO2018201566A1 (en) | Laser detection device, and application method thereof | |
| JP6852008B2 (en) | Optical inspection equipment, semiconductor devices and optical inspection methods | |
| CN104483027A (en) | Automatic laser pulse width measurement autocorrelator and measurement method | |
| CN203286992U (en) | Detection device for verticality of laser beam | |
| CN108693247B (en) | Laser surface acoustic wave detection system based on double measuring beams and use method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20131002 |