CN103326060B - Electrical storage device and electrical equipment - Google Patents

Electrical storage device and electrical equipment Download PDF

Info

Publication number
CN103326060B
CN103326060B CN201310091003.6A CN201310091003A CN103326060B CN 103326060 B CN103326060 B CN 103326060B CN 201310091003 A CN201310091003 A CN 201310091003A CN 103326060 B CN103326060 B CN 103326060B
Authority
CN
China
Prior art keywords
collector
storage device
electrical storage
active material
material layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201310091003.6A
Other languages
Chinese (zh)
Other versions
CN103326060A (en
Inventor
栗城和贵
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN103326060A publication Critical patent/CN103326060A/en
Application granted granted Critical
Publication of CN103326060B publication Critical patent/CN103326060B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00Secondary cells; Manufacture thereof
    • H01M10/36Accumulators not provided for in groups H01M10/05-H01M10/34
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G9/00Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004Details
    • H01G9/04Electrodes or formation of dielectric layers thereon
    • H01G9/048Electrodes or formation of dielectric layers thereon characterised by their structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G11/00Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/04Hybrid capacitors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G11/00Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/08Structural combinations, e.g. assembly or connection, of hybrid or EDL capacitors with other electric components, at least one hybrid or EDL capacitor being the main component
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G11/00Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22Electrodes
    • H01G11/26Electrodes characterised by their structure, e.g. multi-layered, porosity or surface features
    • H01G11/28Electrodes characterised by their structure, e.g. multi-layered, porosity or surface features arranged or disposed on a current collector; Layers or phases between electrodes and current collectors, e.g. adhesives
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G11/00Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/66Current collectors
    • H01G11/70Current collectors characterised by their structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00Electrodes
    • H01M4/02Electrodes composed of, or comprising, active material
    • H01M4/64Carriers or collectors
    • H01M4/70Carriers or collectors characterised by shape or form
    • H01M4/72Grids
    • H01M4/74Meshes or woven material; Expanded metal
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00Secondary cells; Manufacture thereof
    • H01M10/05Accumulators with non-aqueous electrolyte
    • H01M10/052Li-accumulators
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00Electrodes
    • H01M4/02Electrodes composed of, or comprising, active material
    • H01M4/13Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
    • H01M4/131Electrodes based on mixed oxides or hydroxides, or on mixtures of oxides or hydroxides, e.g. LiCoOx
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10Energy storage using batteries
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/13Energy storage using capacitors
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Abstract

A kind of electrical storage device and electrical equipment are provided, which has high flash-over characteristic, and has translucency.The electrical storage device includes:It is netted the first collector, the first active material layer, the solid electrolyte layer on the first active material layer, the second active material layer on solid electrolyte layer and the second collector on the second active material layer on the first collector with flat shape.

Description

Electrical storage device and electrical equipment
Technical field
The present invention relates to a kind of objects(product;Including machine(machine), product(manufacture)And combination Object(composition of matter))And method(process;Including simple method and production method).The reality of the present invention Apply mode more particularly to a kind of electrical storage device and its manufacturing method.
Background technology
In recent years, the electrical storage devices such as the non-aqueous secondary batteries such as lithium secondary battery, lithium-ion capacitor, air cell are widely Applied to using mobile phone, smart mobile phone as people such as the display devices such as the information terminal of representative, liquid crystal TV set and game machines The power supply of electrical installation.
Especially lithium secondary battery has the higher energy density compared with the existing battery such as nickel-cadmium cell, so conduct It can carry out the portable data assistances such as mobile phone, smart mobile phone and notebook personal computer, portable music plays The energy supply source of the charging of the electrical equipments such as device, digital camera etc., lithium secondary battery becomes can not in Modern Information based Society The part lacked.
For example, the lithium secondary battery of existing non-aqueous secondary batteries generally comprises:Anode is constituted by aluminium of film-form etc. Positive electrode collector two sides be coated with containing occlude and discharge lithium ion positive active material cathode mix;And it is negative Pole is coated on the two sides for the negative electrode collector being made of copper of film-form etc. containing the negative electrode active for occluding and discharging lithium ion The negative electrode mix of substance.It is formed in and accompanies separator between the positive electrode and negative electrode and the coiling body that winds of multilayer ground, and make Positive pole ear and negative lug be connected to anode and the respective specified part of cathode, by its together with organic electrolyte it is close It is enclosed in the external packing body of fixation shape of cylindrical, rectangular, coin-shaped etc..
In addition, in recent years, solid secondary batteries as disclosed in Patent Document 1 are expanded with positive research.Solid-state two Primary cell does not use liquid as material, is replaced using inorganic solid electrolyte or solid organic polymer electrolyte existing non- Water electrolysis liquid.Therefore, there is not leakage, and solid electrolyte has low flammability, it is possible thereby to avoid danger on fire.Such as This, can improve safety using solid secondary batteries, can also improve the intensity in the structure of battery.Furthermore it can realize The simplification of external packing body and larger in area, to also be superior to the battery using electrolyte from the perspective of production.
[patent document 1] Japanese patent application discloses 2007-123081 bulletins
In addition, in the case of either organic electrolyte being used still to use solid electrolyte, headed by lithium secondary battery Component of the practical electrical storage device all as the composition electrical storage device such as anode, cathode and outer tinning use non-light transmittance material, So being difficult to manufacture the electrical storage device of energy light transmission.Therefore, it is manufactured without transparent electrical storage device at present.To, such as it is being combined with liquid In the case of the electrical equipments such as brilliant television set or solar cell and existing electrical storage device, due to electrical storage device shielding light, institute It is defined with the allocation position in the electrical apparatus of electrical storage device, the design freedom of electrical equipment is also defined.
Invention content
In view of the above problems, the first purpose of one embodiment of the present invention is to provide a kind of electric power storage with high discharge capacity Device.Another purpose of an embodiment of the invention is to provide a kind of transparent electrical storage device.The implementation of the present invention Another purpose of mode is to provide a kind of novel electrical storage device.
Note that the record of these purposes does not interfere the presence of other projects.In addition, one embodiment of the present invention does not need to Realize all above-mentioned purposes.In addition, these purposes are obvious from the record of specification, attached drawing, claims etc., and The purpose other than these purposes can be extracted out from the record of specification, attached drawing, claims and etc.
One embodiment of the present invention disclosed in this specification is a kind of electrical storage device, including:With net plane shape The first collector;The first active material layer on first collector;Solid electrolyte layer on first active material layer;Solid The second active material layer on electrolyte layer;And second the second collector on active material layer.
Another mode of the present invention disclosed in this specification is a kind of electrical storage device, including:With net plane shape First collector of shape;The first active material layer on first collector;Solid electrolyte layer on first active material layer;Gu The second active material layer on body electrolyte layer;And second the second collector on active material layer, wherein in the first current collection In the part in the section of body, highly it is more than 1 relative to the ratio of width.
Electrical storage device according to one method of the present invention includes at least anode, cathode and the solid electrolytic between it Matter.Positive electrode and negative electrode are opposed across solid electrolyte, wherein an orientation, in lower section, another party is located above.To in positive position In the case of lower section, the first collector is positive electrode collector, and the first active material layer is positive electrode active material layer, also, the Two collectors are negative electrode collector, and the second active material layer is negative electrode active material layer.On the other hand, underlying in cathode In the case of, the first collector is negative electrode collector, and the first active material layer is negative electrode active material layer, also, the second collector For positive electrode collector, the second active material layer is positive electrode active material layer.
First collector uses the conductive member with net plane shape.In other words, the first collector be film-form or It is lamellar, it is to look like netted component when viewed from above." netted " for example refers to elongated conductive member flat herein Crisscross shape, also referred to as silk screen on face(mesh)Or grid(grid)." netted " is not necessarily limited to by independent of one another Multiple elongated conductive members woollen yarn knittings and formed, further include elongated part(Hereinafter referred to as " thin thread part ")It is integrated.It changes Yan Zhi, " netted " refer to the shape for having multiple meshes, and mesh is the opening portion for referring to the conductive member through light.Due to opening Oral area is periodically arranged, so can also above-mentioned reticulated conductive component be known as aperture array.
The structure of the first netted collector according to one method of the present invention is to realize transparent electrical storage device The area more high transparency of structure, mesh is higher.In other words, the smaller transparency of the width of the thin thread part of the first collector is higher.
For example, the width of the thin thread part of the first collector is set as 1 in flat shapeμM or more and 2000 μm hereinafter, Be preferably set to 10 μm or more and 1000 μm hereinafter, by aperture opening ratio be set as 20% or more and 95% hereinafter, preferably 30% with It is upper and 80% or less.Here, aperture opening ratio η(Also referred to as " percent opening ")It refer to the least unit in the opening portion being periodically arranged Area ratio shared by area split shed portion.Specifically, aperture opening ratio η is indicated by following formula 1.
[formula 1]
Here, s indicate opening portion area, S indicate mesh shape periodic arrangement least unit area, in order to Percentage indicates aperture opening ratio and is multiplied by 100.
For example, the area s of opening portion 102 is opening when the mesh shape of the first collector is clathrate shown in figure 1A The least unit area S of the product of the longitudinal direction in portion and the two of horizontal direction sides, the periodic arrangement of mesh shape is longitudinal Interval between the thin thread part 101 in direction and the thin thread part 101 of the longitudinal direction adjacent with it(Filament interval)And transverse direction side To thin thread part 101 and the thin thread part 101 of the horizontal direction adjacent with it between interval product.
In addition, the discharge capacity of the basic function of electrical storage device is formed in the surface of the first netted collector, The mesh portion of one collector(Opening portion)Do not form capacitance.To which the increase with the area for foring mesh correspondingly, is discharged Capacitance reduces.Therefore, in order to increase the discharge capacity of electrical storage device, improve the cross sectional shape of the first netted collector with net Height in the orthogonal section of the plane of shape.By improving the height of the first collector, the area of the side of the first collector obtains To raising, so forming discharge capacity by the part in the side, the big electrical storage device of discharge capacity can be manufactured.
The first active material is formed by sputtering method, vapour deposition method, plating method, chemical vapour deposition technique etc. on the first collector Layer, solid electrolyte layer, the second active material layer and the second collector.Therefore, each layer can be formed by the above method Mode set the height on the longitudinal cross-section direction of the first collector.For example, the height of the thin thread part of the first collector is set It is set to 1 μm or more and 5000 μm hereinafter, being preferably set to 10 μm or more and 2000 μm or less.Especially, in order to by increasing by the The area of the side of one collector and the discharge capacity for improving electrical storage device, preferably improve the height of the first collector, preferably have There is the ratio of the width of the opposite thin thread part of the height of first collector of first collector in the section of longitudinal direction(Thin thread part Aspect ratio)Part more than 1.
In electrical storage device according to one method of the present invention, the first active matter is laminated on above-mentioned first collector Matter layer, solid electrolyte layer, the second active material layer and the second collector, and electric power storage according to one method of the present invention Device can have certain discharge capacity.
In above-mentioned electrical storage device according to one method of the present invention, the first collector has net plane shape, institute Light can penetrate opening portion in addition.Therefore, it can see the subsequent object positioned at electrical storage device through electrical storage device.
It is capable of providing with high discharge capacity and with the electrical storage device of translucency.
In addition, by using solid electrolyte, intensity and the safety of battery can be improved, can also realize external packing body Simplification and larger in area, and then can provide production high electrical storage device.
Description of the drawings
Figure 1A and Figure 1B is the figure for illustrating electrical storage device;
Fig. 2A and Fig. 2 B are the figures for illustrating electrical storage device;
Fig. 3 A to Fig. 3 F are the figures for the flat shape for illustrating collector;
Fig. 4 A and Fig. 4 B are the figures for illustrating electrical storage device;
Fig. 5 A and Fig. 5 B are the figures for illustrating electrical storage device;
Fig. 6 is the figure for illustrating battery pack;
Fig. 7 A and Fig. 7 B are the figures for illustrating electrical equipment.
Specific implementation mode
Hereinafter, being illustrated to embodiment with reference to attached drawing.But embodiment can be come in fact in a manner of multiple and different It applies, those of ordinary skill in the art can easily understand that a fact, being exactly its mode and detailed content can By be transformed to it is various in the form of without departing from spirit of the invention and its range.Therefore, the present invention should not be explained To be only limited in the content recorded in embodiment as shown below.
Note that in each attached drawing illustrated by this specification, the size of each structure, the thickness of film or region are sometimes for bright It is exaggerated for the sake of really.Therefore, however it is not limited to the size.
Embodiment 1
In the present embodiment, as transparent electrical storage device, A to Fig. 3 F says transparent lithium secondary battery referring to Fig.1 It is bright.
Note that lithium secondary battery refers to the secondary cell for using lithium ion as carrier ion.In addition, as that can be used for Instead of the carrier ion of lithium ion, the alkali metal ions such as sodium ion, potassium ion, calcium ion, strontium ion, barium ions etc. can be enumerated Alkaline-earth metal ions, beryllium ion or magnesium ion etc..
Figure 1A and Figure 1B is the figure for illustrating electrical storage device shown in present embodiment.Electrical storage device 100 is including at least just Pole, cathode and the solid electrolyte accompanied between them structure.Figure 1A shows the plan view of electrical storage device 100, Figure 1B The birds-eye view of electrical storage device 100 is shown.As shown in the plan view of Figure 1A, electrical storage device has comprising being formed as netted thin thread part (Reticular structure body)101 flat shape is formed with opening portion 102 in the position for not forming thin thread part 101.In figure 1A, Thin thread part 101 is formed by multiple vertical lines and horizontal line and has periodic grid pattern.In other words, the opening portion of multiple squares 102 arrange and are formed as gap in the major part of plane, and thin thread part 101 has lattice-shaped pattern.
" netted " for example refers to elongated conductive member shape crisscross in the plane, also referred to as silk screen herein (mesh)Or grid(grid)." netted " is not necessarily limited to be knitted by multiple elongated conductive members independent of each other and be formed, It further include the component that elongated part is integrally formed.In other words, " netted " refers to the shape for having multiple meshes, and mesh refers to energy Enough penetrate the opening portion of the conductive member of light.
In addition, as shown in the birds-eye view of Figure 1B, since thin thread part 101 has certain height, so electrical storage device 100 has There is stereochemical structure.In other words, since thin thread part 101 has certain height, so the four sides of opening portion 102 is by four wall packets It encloses.So by making thin thread part 101 that there is certain height, certain region, the areas Er Gai are formed in the side of thin thread part 101 Discharge capacity is formed in domain.
Fig. 2A is a part of enlarged drawing 1B and the schematic diagram of cross sectional shape is also shown.Outer light 103 is through by having height Thin thread part 101 side surround opening portion 102.In addition, thin thread part 101 itself does not have translucency, so thin thread part 101 Reflection or the part for absorbing outer light.
Therefore, in netted electrical storage device 100, the area for being equivalent to the opening portion 102 of mesh is bigger, and the transparency is higher. That is the width of thin thread part 101 is smaller, the transparency is higher.
From the point of view of above-mentioned angle, in the flat shape of electrical storage device by the width of thin thread part be set as 1 μm or more and 2000 μm hereinafter, be preferably set to 10 μm or more and 1000 μm hereinafter, aperture opening ratio is set as 20% or more and 95% hereinafter, excellent It is selected as 30% or more and 80% or less.
Fig. 2 B are the enlarged drawings in the section 104 of thin thread part 101 shown in Fig. 2A.Multiple thin thread parts 101 are periodically arranged, Outer light 103 is through the opening portion 102 between thin thread part 101.
In thin thread part 101, the first active material layer 111, solid electrolyte are sequentially laminated on the first collector 110 The 112, second active material layer 113 of layer and the second collector 114.First collector 110 is used as forming the lamination of thin thread part 101 Basic courses department, width is wide compared with each layer being laminated thereon.In addition, thin thread part 101 has certain height, the height as described above Degree is substantially determined by the height of the first collector 110.
The shape of first collector shown in Fig. 2 B is the parabolic shape to raise up(Or arched door shape).By using this Can each layer easily be laminated on the first collector 110 in shape.In other words, on the first collector 110 by sputtering method, Vapour deposition method, plating method, chemical vapour deposition technique etc. form the first active material layer 111, solid electrolyte layer 112, the second active matter Matter layer 113 and the second collector 114.Therefore, the first current collection is set in the range of can form each layer by the above method The height of body 110 and inclination angle(Also referred to as " cone angle ")Etc. shapes.For example, the height of the thin thread part of the first collector 110 is set It is set to 1 μm or more and 5000 μm hereinafter, being preferably set to 10 μm or more and 2000 μm or less.In addition, the side of the first collector Inclination angle be set as 60 ° or more and 90 ° hereinafter, being preferably set to 65 ° or more and 90 ° or less.Similarly, above-mentioned opening portion 102 size(Area)It can also be set according to method and condition that lamination is formed, such as can be by the face of an opening portion Product is set as 9 μm2More than.
In addition, in the case where the component of the most surface of thin thread part 101 has high reflectivity, it is possible to which thin thread part 101 is anti- It penetrates outer light and the transparency of electrical storage device 100 is made to decline.Therefore, the inclination angle of the first collector 110 can be set as big, with Reduce reflection.
Fig. 2 B show that the cross sectional shape of the first collector is parabolical situation, but cross sectional shape is without being limited thereto, can be with Using different shapes such as dome-shaped, hemispherical, the cone-shaped, plates to raise up.In addition, in order to make the formation of electrical storage device 100 Capacitance, the first collector 110 side formed laminated construction, the first collector 110 near top not necessarily The later each film of the first active material layer 111 is laminated.However, not covering the first collector 110 in solid electrolyte layer 112 In the case of near top, generates short circuit between positive electrode and negative electrode and capacitance cannot be formed.This is not limited to the first collector 110 Top is also required to prevent the short circuit between positive electrode and negative electrode in other parts, thus need suitably to set will not cause it is short The cross sectional shape on road.
As the first collector 110 or the second collector 114(Positive electrode collector or negative electrode collector)It can use as follows Material;For positive electrode collector, stainless steel, gold, platinum, aluminium, titanium, ITO can be used(Indium oxide-tin oxide), oxygen Change the metal film or metal foil of tin, indium oxide etc.;For negative electrode collector, can use stainless steel, gold, platinum, copper, The metal film or metal foil of nickel, cobalt, titanium, molybdenum etc..Furthermore it is possible to contour using the lamination of above-mentioned material or the alloy of above-mentioned material Conductive material.The example of the lamination of various metals is to carry out gold-plated material to the surface of copper silk screen.Further, it is possible to use adding The aluminium alloy of the element of heat resistance is improved added with silicon, titanium, neodymium, scandium, molybdenum etc..
Especially, the first collector 110 is the so-called woven wire of the conductor with net plane shape(metal mesh).It is therefore preferable that using the high material of the processabilities such as copper.
It, can be with as the positive electrode active material layer of the side in the first active material layer 111 and the second active material layer 113 Using the material for insertion and the deintercalation that can carry out lithium ion, for example, crystal structure, stratiform with olivine-type The lithium-contained composite oxide etc. of rock-salt type crystal structure or spinel type crystal structure.
As the lithium-contained composite oxide of olivine-type structure, for example, with general formula LiMPO4(M is Fe(II)、 Mn(II)、Co(II)、Ni(II)One or more of)The composite oxides of expression.As general formula LiMPO4Exemplary, can To enumerate LiFePO4、LiNiPO4、LiCoPO4、LiMnPO4、LiFeaNibPO4、LiFeaCobPO4、LiFeaMnbPO4、 LiNiaCobPO4、LiNiaMnbPO4(A+b is 1 hereinafter, 0<a<1,0<b<1)、LiFecNidCoePO4、LiFecNidMnePO4、 LiNicCodMnePO4(C+d+e is 1 hereinafter, 0<c<1,0<d<1,0<e<1)、LiFefNigCohMniPO4(F+g+h+i be 1 hereinafter, 0<f<1,0<g<1,0<h<1,0<i<1)Deng.
Especially, LiFePO4Balancedly meet project such as safety, stability, the height that positive active material is required Capacitance density, high potential, initial oxidation(Charging)When the presence etc. of lithium ion extracted out, so being preferred.
As the lithium-contained composite oxide of the crystal structure with rocksalt-type, for example,:Cobalt acid lithium (LiCoO2);LiNiO2、LiMnO2、Li2MnO3、LiNi0.8Co0.2O2Equal NiCo classes(General formula is LiNixCo1-xO2(0<x<1)); LiNi0.5Mn0.5O2Equal NiMn classes(General formula is LiNixMn1-xO2(0<x<1));And LiNi1/3Mn1/3Co1/3O2Equal NiMnCo classes (Also referred to as NMC.General formula is LiNixMnyCo1-x-yO2(x>0, y>0, x+y<1)).Furthermore, it is also possible to enumerate Li (Ni0.8Co0.15Al0.05)O2、Li2MnO3-LiMO2(M=Co, Ni, Mn)Deng.
LiCoO2With capacitance is big and LiNiO2Compared to stable and and LiNiO in an atmosphere2It is excellent compared to thermostabilization etc. Point, so being particularly preferred.
As the lithium-contained composite oxide of the crystal structure with spinel-type, for example, LiMn2O4、Li1+ xMn2-xO4、Li(MnAl)2O4、LiMn1.5Ni0.5O4Deng.
When to LiMn2O4Lithium-contained composite oxide Deng the crystal structure with spinel-type containing manganese mixes a small amount of nickel Sour lithium(LiNiO2Or LiNi1-xMO2(M=Co, Al etc.))When, have the advantages that inhibit the elution of manganese, so being preferred.
In addition, as a positive electrode active material, can use with general formula Li(2-j)MSiO4(M is Fe(II)、Mn(II)、Co (II)、Ni(II)One or more of, 0≤j≤2)The composite oxides of expression.As general formula Li(2-j)MSiO4Typical case Son can enumerate Li(2-j)FeSiO4、Li(2-j)NiSiO4、Li(2-j)CoSiO4、Li(2-j)MnSiO4、Li(2-j)FekNilSiO4、 Li(2-j)FekColSiO4、Li(2-j)FekMnlSiO4、Li(2-j)NikColSiO4、Li(2-j)NikMnlSiO4(K+l is 1 hereinafter, 0<k <1,0<l<1)、Li(2-j)FemNinCoqSiO4、Li(2-j)FemNinMnqSiO4、Li(2-j)NimConMnqSiO4(M+n+q be 1 with Under, 0<m<1,0<n<1,0<q<1)、Li(2-j)FerNisCotMnuSiO4(R+s+t+u is 1 hereinafter, 0<r<1,0<s<1,0<t<1,0 <u<1)Deng.
In addition, as a positive electrode active material, can use with general formula AxM2(XO4)3(A=Li, Na, Mg, M=Fe, Mn, Ti, V, Nb, Al, X=S, P, Mo, W, As, Si)The sodium superionic conductors of expression(nasicon)Type compound.As sodium superionic conductors Type compound can enumerate Fe2(MnO4)3、Fe2(SO4)3、Li3Fe2(PO4)3Deng.It, can be in addition, as a positive electrode active material Use following material:With general formula Li2MPO4F、Li2MP2O7、Li5MO4(M=Fe、Mn)The compound of expression;NaF3、FeF3Equal calcium titanium Mine fluoride;TiS2、MoS2Equal metal chalcogenide compounds(Sulfide, selenides, tellurides);LiMVO4Deng with inverse spinel The lithium-contained composite oxide of the crystal structure of type;Barium oxide class(V2O5、V6O13、LiV3O8Deng);Manganese oxide type;And have Machine sulphur class etc..
In addition, when carrier ion is alkali metal ion, alkaline-earth metal ions, beryllium ion or the magnesium ion other than lithium ion When, positive electrode active material layer can also use alkali metal(For example, sodium, potassium etc.), alkaline-earth metal(For example, calcium, strontium, barium etc.), beryllium Or magnesium replaces the lithium in above-mentioned lithium compound and lithium-contained composite oxide.
It, can be in the negative electrode active material layer of a side in the first active material layer 111 and the second active material layer 113 Using the alloy material of discharge and recharge reaction can be carried out using alloying reaction is taken off with the alloying of lithium metal.For example, The material for including at least one of Al, Si, Ge, Sn, Pb, Sb, Bi, Ag, Zn, Cd, In and Ga etc. can also be enumerated.This element Capacity ratio carbon it is high, especially the theoretical capacitance of silicon is 4200mAh/g, especially high, i.e.,.Thus it is preferred to which silicon is lived for cathode Property substance.As the alloy material for using this element, for example, SiO, Mg2Si、Mg2Ge、SnO、SnO2、 Mg2Sn、SnS2、V2Sn3、FeSn2、CoSn2、Ni3Sn2、Cu6Sn5、Ag3Sn、Ag3Sb、Ni2MnSb、CeSb3、LaSn3、 La3Co2Sn7、CoSb3, InSb and SbSn etc..
In addition, as negative electrode active material, oxide such as titanium dioxide can be used(TiO2), Li-Ti oxide (Li4Ti5O12), lithium-compound between graphite layers(LixC6), niobium pentoxide(Nb2O5), tungsten oxide(WO2), molybdenum oxide(MoO2)Deng.
In addition, as negative electrode active material, the Li of the nitride with lithium and transition metal can be used3N type junction structure Li3-xMxN(M=Co, Ni, Cu).For example, Li2.6Co0.4N3Big charge and discharge capacitance is presented(900mAh/g), so being preferred.
Include lithium ion in the negative active material, therefore can be by it when using the nitride of lithium and transition metal With the V as positive active material2O5、Cr3O8Deng the combination of materials not comprising lithium ion, so being preferred.Note that as When using the material containing lithium ion for positive active material, lithium and transition can also be used by being in advance detached from lithium ion The nitride of metal.
When using silicon as negative electrode active material, amorphous can be used(amorphous)Silicon, microcrystal silicon, polysilicon or Combination thereof.Usually, silicon can be used for by higher therefore high as the conductivity electrode of the conductivity of the higher silicon of crystallinity Electrical storage device.On the other hand, in the case where silicon is amorphous, compared with the case where silicon is crystal, can more occlude the carriers such as lithium from Son, therefore discharge capacity can be improved.
Solid electrolyte layer 112 can pass through sputtering method, vapour deposition method, chemical vapour deposition technique(Specifically, organic metal Vapour deposition process)The inorganic solid electrolyte of formation.Inorganic solid electrolyte can use sulfide solid electrolyte or oxidation Object solid electrolyte.
As sulfide solid electrolyte for example, Li2S-SiS2-Li3PO4、Li2S-P2S5、Li2S-SiS2- Ga2S3、LiI-Li2S-P2S5、LiI-Li2S-B2S3、LiI-Li2S-SiS2、Li3PO4-Li2S-SiS2、Li4SiO4-Li2S-SiS2 Equal materials.
In addition, LiPON, Li can be enumerated as solid oxide electrolyte2O、Li2CO3、Li2MoO4、Li3PO4、 Li3VO4、Li4SiO4、LLT(La2/3-xLi3xTiO3)、LLZ(Li7La3Zr2O12)Equal materials.
Alternatively, it is also possible to use the PEO by formation such as coating process(Polyethylene glycol oxide)Equal polymer solid electrolytes.Separately Outside, the composite solid electrolyte containing above-mentioned inorganic solid electrolyte and polymer solid electrolyte can also be used.
Then, with reference to Fig. 3 A to Fig. 3 F to the storage with the flat shape different from flat shape shown in Figure 1A to Fig. 2 B Electric installation illustrates.
Fig. 3 A are the plan views of electrical storage device 120a, and plurality of thin thread part 121a is only in a lateral direction according to certain It is alternatively arranged.The opening portion for not forming thin thread part 121a is used as gap, and outer light penetrates the opening portion.
Fig. 3 B are the plan views of electrical storage device 120b, wherein adding longitudinal direction on the basis of the flat shape of Fig. 3 A Thin thread part and the thin thread part 121b for forming clathrate.Due to being provided with the thin thread part of longitudinal direction, so electrical storage device 120b tools There is the mechanical strength than electrical storage device 120a high shown in Fig. 3 A, and is formed by discharge capacity and also increases.
Fig. 3 C are electrical storage device 120c, and electrical storage device 120c has in a staggered manner obliquely configuration thin thread part 121c Flat shape.Fig. 3 C are equivalent to the electrical storage device of 45 ° of electrical storage device rotation shown in Figure 1A to Fig. 2 B.
Fig. 3 D are the plan views of electrical storage device 120d, and electrical storage device 120d, which has, is included in flat shape shown in Fig. 3 C On the basis of add the thin thread part extended to horizontal direction thin thread part 121d flat shape.Electrical storage device 120d has than figure The mechanical strength of electrical storage device 120c high shown in 3C, and be formed by discharge capacity and also increase.
Fig. 3 E are the plan views of electrical storage device 120e, and electrical storage device 120e has using the shape of opening portion as regular hexagon Mode formed thin thread part 121e honeycomb flat shape.The structure may insure wider opening portion, it is possible to Form the electrical storage device of the transparency and high mechanical strength that ensure electrical storage device 120e.
Fig. 3 F are the plan views of electrical storage device 120f, and electrical storage device 120f has with the shape of opening portion for circular side Formula forms the flat shape of thin thread part 121f.The shape of the electrical storage device is different from above-mentioned shape, the width of thin thread part 121f It is different according to the difference of position.
As described above, the flat shape of electrical storage device according to the present invention is not limited to above-mentioned flat shape, can have with Various shapes are used premised on multiple opening portions of outer light-transmissive.
Present embodiment can be appropriately combined with other embodiment and be implemented.
Embodiment 2
In the present embodiment, with reference to Fig. 4 A and Fig. 4 B to using substrate in the electrical storage device shown in embodiment 1 Example illustrates.
As shown in Fig. 4 A of the perspective view of electrical storage device 200, electrical storage device 200 according to the present embodiment, which has, to be implemented The lower section of electrical storage device 100 shown in mode 1 is provided with the structure of substrate 205.In other words, it is provided with filament on substrate 205 Portion 201.Substrate 205 is made of the component with translucency.Therefore, it penetrates and opens from the outer light 203 of the top of thin thread part 201 incidence Oral area 202 and substrate 205 and the outside for reaching electrical storage device 200.In addition, the outer light of the lower section incidence from electrical storage device 200(Not Diagram)The top of electrical storage device 200 is reached through substrate 205 and opening portion 202.
Substrate 205 is the component with translucency, and the material of glass or quartz etc. can be used for example.In addition, thin Membranaceous plastics, such as polyethylene terephthalate(PET), polyether sulfone(PES), polyethylene naphthalate(PEN)、 Makrolon(PC), nylon, polyether-ether-ketone(PEEK), polysulfones(PSF), polyetherimide(PEI), polyarylate(PAR), it is poly- to benzene Dioctyl phthalate butanediol ester(PBT)Deng it is possible thereby to make electrical storage device that there is light weight and flexibility.
By the way that substrate 205 is used for electrical storage device 200, the mechanical strength of electrical storage device 200 can be improved.
Not only substrate 205 can be used when manufacturing thin thread part 201, but also can be manufactured thin thread part 201 and later be pasted substrate 205 Close thin thread part 201.Alternatively, using substrate 205 and substrate 205 can also removed later when manufacturing thin thread part 201.
Fig. 4 B show the longitdinal cross-section diagram of the electrical storage device 200 in the section 204 comprising thin thread part 201.The shape on substrate 205 At there is the thin thread part 201 with net plane shape, the thin thread part 201 is active by the first collector 210, first stacked gradually Material layer 211, solid electrolyte layer 212, the second active material layer 213 and the second collector 214 are constituted.
Here, in the present embodiment, sealant 215 is provided on thin thread part 201.Sealant 215 also referred to as covers Cap rock.It is arranged in a manner of the surface of exposing of the sealant 215 thin thread part 201 is completely covered.It is possible thereby to make battery structure with Isolated from atmosphere.The insulating materials such as resin, glass, amorphous compound, ceramics can be used for example in sealant 215.Sealant 215 has There are the single layer of above-mentioned insulating materials or the structure of lamination.
In addition, in Fig. 4 A and Fig. 4 B, sealant 215 is set only on thin thread part 201, but is not limited to thin thread part 201 On region, can also also form sealant 215 in the region on opening portion 202 of substrate 205 and formed one it is continuous Layer.In the case, sealant 215 needs to be formed using the material with translucency.
Alternatively, it is also possible to which black pigment or dyestuff are distributed in sealant 215 and as the film different from sealant 215 The layer for being dispersed with black pigment or dyestuff is formed on sealant 215(It is not shown).By the layer that will be added with black pigment etc. It is formed on thin thread part 201, even if when as the second collector 214 using the reflectivity such as aluminium high component, can also inhibit Reflection, it is possible to the high electrical storage device 200 of the manufacture transparency.
In the present embodiment, substrate 205 is set in the lower section of thin thread part 201 and is set in a manner of covering thin thread part 201 Sealant 215 is set, but the structure of the setting wherein electrical storage device of a side can also be used.
Present embodiment can be appropriately combined with other embodiment and be implemented.
Embodiment 3
In the present embodiment, with reference to Fig. 5 A and Fig. 5 B to fill the opening portion of electrical storage device shown in embodiment 2 Mode the example of insulating layer be set illustrate.
Fig. 5 A are the stereograms for showing electrical storage device 300 according to the present embodiment.It is filled with electric power storage shown in embodiment 2 It sets equally, electrical storage device 300 has thin thread part 301 and opening portion 302 on substrate 305.On the basis of the structure, in filament Insulating layer 316 is additionally provided in a manner of filling opening portion 302 on portion 301 and opening portion 302.Insulating layer 316 is by with light transmission Property material constitute.To, outer light 303 through insulating layer 316 and from opening portion 302 via substrate 305 to electrical storage device 300 Lower section is pierced by.
Fig. 5 B show the longitudinal cross-section structure of the electrical storage device 300 in the section 304 comprising thin thread part 301.On substrate 305 It is provided with thin thread part 301, the thin thread part 301 is electric by the first collector 310, the first active material layer 311, solid stacked gradually It solves matter layer 312, the second active material layer 313 and the second collector 314 to constitute, sealant is provided on thin thread part 301 315.In addition, with embodiment 1 shown in can be omitted sealant 315 in the same manner as electrical storage device 100.In thin thread part 301 or Insulating layer 316 is provided on sealant 315 and on opening portion 302.Fig. 5 B show that insulating layer 316 has the feelings of flat surfaces Condition, but not limited to this, and insulating layer 316 can for example reflect the surface shape of thin thread part 301 and have concaveconvex shape.
By the way that insulating layer 316 is arranged in a manner of filling opening portion 302, the mechanical strength of electrical storage device 300 can be improved. In addition, forming insulating layer 316 by using using material identical with sealant 315, the battery structure of thin thread part 301 can be made With isolated from atmosphere.Furthermore it is used by being used as substrate 305 with material flexible and using such as rubber as insulating layer 316 The flexible electrical storage device that can be bent or bend may be implemented in flexible material.
As insulating layer 316, it can use and contain organic and/or inorganic materials(Silica, silicon nitride, silicon oxynitride, silicon oxynitride Deng), photonasty or non-photosensitive organic material(Organic resin material)(Polyimides, acrylic resin, polyamide, polyamides are sub- Amine amide, resist, benzocyclobutene etc.)In one or more films;Or the lamination etc. of these films.In addition it is also possible to Use silicone resin.
Alternatively, it is also possible to which pigments or dyes are distributed in insulating layer 316.In the case, by absorbing through opening The specified wavelength of the outer light 303 in portion 302 can manufacture the translucent electrical storage device coloured.
Present embodiment can be appropriately combined with other embodiment and be implemented.
Embodiment 4
Then, in the present embodiment, with reference to Fig. 2 B to the typical manufacturer of the electrical storage device illustrated by embodiment 1 Method illustrates.In addition, in the present embodiment, illustrating that the first collector 110 is positive electrode collector, the second collector 114 is Negative electrode collector, the first active material layer 111 are positive electrode active material layer, and the second active material layer 113 is negative electrode active material The case where layer.
(The formation of first collector)
First, the woven wire as positive electrode collector as the first collector 110 is formed.Woven wire passes through to tool The conductive member of the film-form or plate that have desirable area carries out photo-mask process and etching work procedure and is processed into net plane Shape.
Stainless steel, gold, platinum, copper, iron, aluminium, titanium, chromium, cobalt, ITO can be used as film-form or the conductive member of plate (Indium oxide-tin oxide), tin oxide, the metal of indium oxide etc., the lamination of above-mentioned metal or above-mentioned metal the conductions such as alloy The high material of property.The thickness of conductive member is equivalent to the height of the thin thread part 101 of the first collector 110, it is contemplated that desired Discharge capacity or each film being laminated thereon productivity and suitably set its thickness.For example, can be with as conductive member Use 1 μm or more and 5000 μm film, film or plate below.
The processing of conductive member can be carried out by photo-mask process.In other words, on conductive member coating formed positivity or The photoresist of negativity uses the photomask pair that the chromium film for being pre-formed into desirable pattern is provided in quartz substrate The photoresist is exposed.It is to cover to form figuratum photoresist after the imaging and baking of photoresist Mould carries out wet etching to form multiple opening portions in conductive member to conductive member.It is consequently formed with net plane shape Metallic film the first collector 110.After forming opening portion, pass through the removal photoresist mask such as ashing processing.
Above-mentioned photo-mask process and etching work procedure are preferably carried out at the same time on the two sides of conductive member.Both can be formed as on two sides Identical photoresist figure, but can also be by forming figure different from each other, to form such as shown in Figure 2 B throw The longitudinal section shape of object threadiness.
By above-mentioned operation, such as the width of thin thread part that can be formed in flat shape is set as 1 μm or more and 2000 μ M is hereinafter, be preferably set to 10 μm or more and 1000 μm hereinafter, aperture opening ratio is set as 20% or more and 95% hereinafter, preferably 30% or more and 80% first collector below.
In addition, in order to support conductive member in the photo-mask process or etching work procedure etc., it can be at the back side of conductive member It forms support substrate and removes the substrate after terminating process.
Furthermore it is possible to which the surface of reticulated conductive component is formed by with other metal film claddings by plating etc..
Furthermore it is possible to be carried out before or after the processing of conductive member for making conductive member be thinned or planarize Polishing treatment.
As described above, being manufactured with net plane shape by carrying out photo-mask process and etching work procedure to conductive member First collector, but the manufacturing method of the first collector is without being limited thereto.For example, it is also possible to be formed by nano-imprint method Photoresist pattern carries out wet etching to conductive member for mask and forms net metal silk screen.Furthermore it is also possible to by receiving Rice stamped method, print process, ink-jet method etc. directly form reticulated conductive component, without utilizing photo-mask process and etching work procedure.In addition, It is then stretched in conductive member upper cut using cutting die and forms net metal silk screen.Alternatively, it is also possible to by the irradiation of laser, Opening portion is formed using the punching of pressue device, punching.
(The formation of thin thread part)
Then, in the netted positive electrode collector formed through the above steps(First collector 110)On stack gradually anode Active material layer(First active material layer 111), solid electrolyte layer 112, negative electrode active material layer(Second active material layer 113), negative electrode collector(Second collector 114)To form thin thread part 101.
Positive electrode active material layer, negative electrode active material layer, the negative electrode collector of composition thin thread part 101 can utilize following thin Film forming method is formed:The various vapour deposition processes such as sputtering method, CVD method, vapour deposition method, ion plating, laser ablation method, plating Method, the sol-gel method for having used sol-gel solution, the method etc. that will be roasted after particle dispersion liquid coating.Especially It is that in electrical storage device according to the present invention, each film is deposited on the netted collector with certain altitude, it can be suitably The uniformity for the thickness for being formed by film is selected to be improved and the deep of the collector can be covered well(Root)'s Method.For example, the RF magnetron sputtering systems using one of sputtering method form above-mentioned layer.
Solid electrolyte layer 112 can pass through sputtering method, the films shape such as spin-coating method, ink-jet method on positive electrode active material layer It is formed at method.The thickness of solid electrolyte layer 112 is preferably 500nm or more and 5000nm or less.This is because following reason: In general, the ionic conductivity of solid electrolyte is low, so need to make its filming to reduce resistance, but if thickness mistake It is thin, it is possible to generate pin hole and lead to the short circuit between positive electrode and negative electrode.It is solid when being formed using vapour deposition processes such as sputtering methods When body electrolyte layer 112, is properly selected in the same manner as positive electrode active material layer and negative electrode active material layer and be formed by film The uniformity of thickness be improved and the deep of the netted collector can be covered well(Root)Method.
As the material of solid electrolyte layer 112, Li can be enumerated2S-SiS2-Li3PO4、Li2S-P2S5、Li2S-SiS2- Ga2S3、LiI-Li2S-P2S5、LiI-Li2S-B2S3、LiI-Li2S-SiS2、Li3PO4-Li2S-SiS2、Li4SiO4-Li2S-SiS2 Sulfides solid electrolyte material, LiPON, Li2O、Li2CO3、Li2MoO4、Li3PO4、Li3VO4、Li4SiO4、LLT(La2/3- xLi3xTiO3)、LLZ(Li7La3Zr2O12)Equal solid oxide electrolytes material.
When using PEO(Polyethylene glycol oxide)When equal polymer solid electrolytes, the formation such as coating process are utilized.
By the above-mentioned manufacture method, can stack gradually on a wire mesh positive electrode active material layer, solid electrolyte layer, Negative electrode active material layer and negative electrode collector.
Above-mentioned laminated construction on woven wire can be to be not exposed to the side of air by using piece leaf formula sputter equipment Formula is continuously formed.By above-mentioned continuous formation, the productivity of electrical storage device can be increased substantially.
In other words, the structure of electrical storage device according to the present invention can be by with the first netted collector such as woven wire Layer thereon is stacked gradually to manufacture from the first collector for base material, so not needing the patterning step of various films.Therefore, Transparent electrical storage device can be efficiently manufactured, production is improved.
Present embodiment can be appropriately combined with other embodiment and be implemented.
Embodiment 5
Then, the battery pack for being equipped with the electrical storage device illustrated by embodiment 1 to embodiment 4 is carried out with reference to Fig. 6 Explanation.
Fig. 6 is the schematic diagram for an example for showing plate battery group 900.Battery pack according to one method of the present invention 900 can be greatly classified into battery unit 901 and circuit portion 902.Battery unit 901 is by clear area 904 and surrounds the clear area 904 Outline borders 903 etc. are constituted.The electrical storage device illustrated by embodiment 1 to embodiment 4 is used in clear area 904.Due to basis The electrical storage device of the present invention is light transmission, so the major part of battery pack 900 is transparent.Outline border 903 has support and fixation is thin The function of the electrical storage device of type and due to electrical storage device is transparent in order to take and show the function of its profile.In addition, also Have the function of protecting the end of electrical storage device.
Not only an electrical storage device can be arranged in clear area 904, but also multiple small-sized electrical storage devices can be arranged.
Electrical storage device is very thin, and its intensity is not high.So degree resistance to external stress is limited.It is therefore preferable that by with glass The components such as glass substrate or transparent resin cover the two sides of electrical storage device to realize the protection and reinforcing of electrical storage device.
The first collector and the second collector of electrical storage device are connect with circuit portion 902.In circuit portion 902, Ke Yishe Set realization battery management unit(BMU:Battery Management Unit)Circuit etc., battery management unit carries out electric power storage The battery voltage data of device, the collection of battery temperature data, overcharge and the monitoring of overdischarge, the monitoring of overcurrent, battery The management of deterioration state, SOC(State Of Charge:Charged state)Calculating, fault detect control etc..In addition, in electricity In road portion 902, it is provided as increasing the PTC element of the increased thermal sensation resistive element of its resistance with temperature(Positive Temperature Coefficient:Positive temperature coefficient), abnormal heating is prevented by the increase controlling electricity of resistance, It is effective.As PTC element, barium titanate can be used(BaTiO3)Based semiconductor ceramics etc..Circuit portion 902 and positive terminal 905a and negative terminal 905b connections.
Plate battery group 900 shown in fig. 6 is rectangle, but the shape of battery pack is without being limited thereto, can also use triangle The polygonals such as shape, square, hexagon, circle, ellipse etc. have the arbitrary plane shape of certain area.In order to using above-mentioned First collector on the basis as electrical storage device being arranged in battery unit 901 is set as above-mentioned shape by shape.
Present embodiment can be appropriately combined with other embodiment and be implemented.
Embodiment 6
Electrical storage device according to one method of the present invention can be used as electrically setting using the various of electric drive Standby power supply.Especially, the transparency of electrical storage device is effectively utilized, preferably improves the electrical storage device for electrical equipment Design.
The specific example of electrical equipment as electrical storage device according to one method of the present invention can enumerate TV The display devices such as machine, display, lighting device, desk-top or notebook-sized personal computer, word processor, reproduction are stored in DVD (Digital Versatile Disc:Digital versatile disc)Etc. still image or dynamic image in recording mediums image again Existing device, portable CD player, radio, tape recorder, headphone sound equipment, sound equipment, table clock, wall clock, wireless electricity Talk about handset, walkie-talkie, portable wireless apparatus, mobile phone, car phone, portable game machine, toy, calculator, portable information It is terminal, electronic memo, E-book reader, electronic interpreter, voice input device, video camera, digital still camera, electronic The thermatrons such as shaver, micro-wave oven, electric cooker, washing machine, dust catcher, water heater, electric fan, hair dryer, air-conditioning equipment Such as air conditioner, humidifier and dehumidifier, dish-washing machine, dish drier, dryer, quilt dryer, refrigerator, electric household freezer, electricity refrigeration Household freezer, DNA are preserved with Medical Devices such as household freezer, flashlight, electric tool, smoke detector, dialysis apparatus etc..Furthermore also Industrial equipment such as guiding lamp, semaphore, conveyer belt, elevator, escalator, industrial robot, accumulating system, use can be enumerated In the electrical storage device etc. for making power balance or intelligent grid.In addition, being pushed away by motor using the electric power from electrical storage device Into moving body etc. be also included in the scope of electrical equipment.As above-mentioned moving body, for example, electric vehicle(EV)、 Have both the hybrid vehicle of internal combustion engine and motor(HEV), plug-in hybrid-power automobile(PHEV), using crawler belt replace this The caterpillar of a little wheels including the electric bicycle of electrically assisted bicycle, motorcycle, electric wheelchair, golf Vehicle, small-sized or large ship, submarine, helicopter, aircraft, rocket, artificial satellite, space probe, planetary probe, space Cosmos airship etc..
In addition, in above-mentioned electrical equipment, as supplying the main power source of most consumption electric power, root can be used According to the electrical storage device of one embodiment of the present invention.Alternatively, in above-mentioned electrical equipment, as when from above-mentioned main power source or business The supply of electric power of power supply can carry out the uninterruptible power supply of the supply of electric power to electrical equipment when stopping, can using according to this hair The electrical storage device of a bright mode.Alternatively, in above-mentioned electrical equipment, as with from above-mentioned main power source or commercial power supply What supply of electric power was carried out at the same time supplies power to the accessory power supply of electrical equipment, can use according to one method of the present invention Electrical storage device.
Fig. 7 A and Fig. 7 B show the concrete structure of above-mentioned electrical equipment.In fig. 7, display device 1000 is to use basis One example of the electrical equipment of the electrical storage device of one embodiment of the present invention.Specifically, display device 1000 is equivalent to electricity Depending on broadcast reception display device, including display unit 1001, electrical storage device 1002a, 1002b, the circuit portion comprising tuner 1003 etc..
As display unit 1001, semiconductor display device such as liquid crystal display device can be used, had in each pixel Light-emitting device, electrophoretic display apparatus, the DMD of the light-emitting components such as standby organic EL element(Digital micro-mirror device:Digital Micromirror Device)、PDP(Plasma display panel:Plasma Display Panel)And FED(Field emission Display:Field Emission Display)Deng.
Display device 1000 can not only receive the supply of electric power from commercial power supply, but can use be accumulated in electrical storage device Electric power in 1002a, 1002b.Therefore, even if when the supply of electric power from commercial power supply cannot be received due to power failure etc., By the way that electrical storage device according to one method of the present invention is used as uninterruptible power supply, display device 1000 can also be utilized.
Electrical storage device 1002a, 1002b according to one method of the present invention is configured in the underface of display unit 1001.Electricity Road portion 1003 is covered by framework, and electrical storage device 1002a, 1002b are not covered by framework but and exposed.Due to electrical storage device 1002a, 1002b is transparent, so can see the subsequent object positioned at display device 1000 through electrical storage device 1002a, 1002b Body, therefore display device 1000 can be made to have on the whole to the design of the succinct impression of people.
In addition, other than broadcast TV reception display device, personal computer display device or advertisement display are used All presentation of information of display device etc. are included in display device in display device 1000.Especially, by using according to this The transparency of the electrical storage device of one mode of invention, may be implemented transparent presentation of information display device.
Fig. 7 B show the example of the clock and watch of the transparency using electrical storage device.Clock and watch 1100 shown in Fig. 7 B are desk clocks, by It lighttight peripheral part 1102 and is constituted by the hyalomere 1101 that peripheral part 1102 surrounds.
Hyalomere 1101 is to show that the display board at moment is Chong Die with transparent display according to the present invention and constitutes.It is aobvious Show that segmented liquid crystal display device can be used for example in plate.Since display board and electrical storage device are all transparent, so can be real Appearance design as display portion at the time of existing clock and watch 1100 is floatd in the air.Driving circuit of display board etc. does not have light transmission Property component be arranged in peripheral part 1102.
In addition, of course, as long as having the electrical storage device of one embodiment of the present invention, being not limited to above-mentioned electrical equipment.
Present embodiment can be appropriately combined with other embodiment and be implemented.

Claims (11)

1. a kind of electrical storage device, the electrical storage device has including being formed netted thin thread part and not forming the thin thread part The flat shape of the opening portion at place, the thin thread part include:
The first collector with net plane shape;
Cover the top surface of first collector and the first active material layer of side surface;
Cover the solid electrolyte layer of the top surface and side surface of first active material layer;
Cover the top surface of the solid electrolyte layer and the second active material layer of side surface;And
The top surface of second active material layer and the second collector of side surface are covered,
The wherein described opening portion be arranged at first collector, first active material layer, the solid electrolyte layer, In each in second active material layer and second collector, to allow exterior light to pass through the opening portion.
2. electrical storage device according to claim 1, wherein in the part in the section of first collector, height phase 1 is more than for the ratio of width.
3. a kind of electrical storage device, it includes being formed netted thin thread part on substrate and not forming institute that the electrical storage device, which has, The flat shape of the opening portion at thin thread part is stated, the thin thread part includes:
The first collector with net plane shape on the substrate;
Cover the top surface of first collector and the first active material layer of side surface;
Cover the solid electrolyte layer of the top surface and side surface of first active material layer;
Cover the top surface of the solid electrolyte layer and the second active material layer of side surface;And
The top surface of second active material layer and the second collector of side surface are covered,
The wherein described opening portion be arranged at first collector, first active material layer, the solid electrolyte layer, In each in second active material layer and second collector, with allow exterior light by the opening portion with And allow to extract the exterior light from the substrate.
4. electrical storage device according to claim 3 further includes the insulating film for covering second collector and the substrate.
5. electrical storage device according to claim 3, wherein first active material layer, the solid electrolyte layer, institute State the end of the second active material layer and second collector and the substrate contact.
6. a kind of electrical storage device, including:
The reticular structure body of the opening portion at the thin thread part is not formed with thin thread part and,
The thin thread part includes:
First collector;
Cover the top surface of first collector and the first active material layer of side surface;
Cover the solid electrolyte layer of the top surface and side surface of first active material layer;
Cover the top surface of the solid electrolyte layer and the second active material layer of side surface;And
The top surface of second active material layer and the second collector of side surface are covered,
The wherein described opening portion be arranged at first collector, first active material layer, the solid electrolyte layer, In each in second active material layer and second collector, to allow exterior light to pass through the opening portion.
7. according to the electrical storage device described in any one of claim 1,3 and 6, wherein first collector is wire Net.
8. electrical storage device according to claim 6 further includes the substrate of the lower section of the reticular structure body.
9. the electrical storage device according to claim 3 or 6 further includes the sealant for covering second collector.
Further include covering the thin thread part of the reticular structure body and described 10. electrical storage device according to claim 6 The insulating film of opening portion.
11. a kind of electrical equipment includes the electrical storage device according to any one of claim 1,3 and 6.
CN201310091003.6A 2012-03-21 2013-03-21 Electrical storage device and electrical equipment Active CN103326060B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012-063807 2012-03-21
JP2012063807 2012-03-21

Publications (2)

Publication Number Publication Date
CN103326060A CN103326060A (en) 2013-09-25
CN103326060B true CN103326060B (en) 2018-10-02

Family

ID=49194684

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310091003.6A Active CN103326060B (en) 2012-03-21 2013-03-21 Electrical storage device and electrical equipment

Country Status (4)

Country Link
US (1) US9142358B2 (en)
JP (1) JP6181948B2 (en)
KR (1) KR102033793B1 (en)
CN (1) CN103326060B (en)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6495570B2 (en) 2012-03-23 2019-04-03 株式会社半導体エネルギー研究所 Power storage device
KR102297634B1 (en) 2013-04-19 2021-09-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Secondary battery and a method for fabricating the same
TWI811937B (en) 2013-10-22 2023-08-11 日商半導體能源研究所股份有限公司 Secondary battery and electronic device
US20150138699A1 (en) 2013-11-15 2015-05-21 Semiconductor Energy Laboratory Co., Ltd. Electronic device
JP6851131B2 (en) 2013-12-04 2021-03-31 株式会社半導体エネルギー研究所 Flexible secondary battery
US9229481B2 (en) 2013-12-20 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9595400B2 (en) * 2014-05-14 2017-03-14 Lockheed Martin Corporation Supercapacitor having improved conductivity properties and method of manufacture
JP6699994B2 (en) 2014-05-23 2020-05-27 株式会社半導体エネルギー研究所 Secondary battery
KR20230151070A (en) 2014-05-29 2023-10-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Secondary battery and electronic device
KR101643585B1 (en) * 2014-06-26 2016-07-29 주식회사 엘지화학 Flexible Electrode Assembly
JP6671882B2 (en) 2014-08-08 2020-03-25 株式会社半導体エネルギー研究所 Rechargeable battery
JP2016057617A (en) 2014-09-05 2016-04-21 株式会社半導体エネルギー研究所 Electronic device
US10185363B2 (en) 2014-11-28 2019-01-22 Semiconductor Energy Laboratory Co., Ltd. Electronic device
US10770729B2 (en) 2015-01-09 2020-09-08 Semiconductor Energy Laboratory Co., Ltd. Electrode, power storage device, and electronic equipment
CN104600243B (en) * 2015-01-28 2016-09-21 清华大学深圳研究生院 A kind of pole piece, energy storage device and preparation method thereof
US10263224B2 (en) 2015-04-23 2019-04-16 Semiconductor Energy Laboratory Co., Ltd. Power storage device and electronic device
US20180034038A1 (en) * 2015-06-04 2018-02-01 Eoplex Limited Lead carrier structure and packages formed therefrom without die attach pads
CN107104222B (en) 2016-02-19 2021-09-21 株式会社半导体能源研究所 Power storage device and power storage system
JP6894243B2 (en) * 2017-01-25 2021-06-30 トヨタ自動車株式会社 Negative electrode layer and lithium all-solid-state battery
JP6961370B2 (en) * 2017-03-15 2021-11-05 株式会社日本マイクロニクス Power storage device
FR3073089B1 (en) * 2017-10-27 2021-07-23 Commissariat Energie Atomique ENERGY STORAGE DEVICE
CN111587502B (en) 2018-02-01 2023-07-14 株式会社Lg新能源 Composite for forming insulating layer of lithium secondary battery and method for preparing electrode of lithium secondary battery using the same
JP6927131B2 (en) 2018-04-16 2021-08-25 トヨタ自動車株式会社 All-solid-state battery manufacturing method, all-solid-state battery and all-solid-state battery system
DE102018112637A1 (en) * 2018-05-25 2019-11-28 Volkswagen Aktiengesellschaft Lithium anode and process for its preparation
CN109887757A (en) * 2019-02-19 2019-06-14 五邑大学 A kind of integral array type sensing energy storage device and preparation method thereof
US11038179B2 (en) * 2019-04-03 2021-06-15 Tuqiang Chen Flexible energy storage devices

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4916035A (en) * 1987-08-06 1990-04-10 Matsushita Electric Industrial Co., Ltd. Photoelectrochemical cells having functions as a solar cell and a secondary cell
CN1532982A (en) * 2003-03-20 2004-09-29 ���µ�����ҵ��ʽ���� Combined battery
CN1993648A (en) * 2004-08-04 2007-07-04 法国圣戈班玻璃厂 Electrochemical system comprising at least one partial making up zone
CN102017281A (en) * 2008-04-28 2011-04-13 株式会社藤仓 Manufacturing method for photoelectric transducer, photoelectric transducer manufactured thereby, manufacturing method for photoelectric transducer module, and photoelectric transducer module manufactured thereby

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5385587A (en) 1993-08-11 1995-01-31 Gnb Battery Technologies Inc. Methods and apparatus for pasting battery current collectors
JPH0922730A (en) * 1995-07-06 1997-01-21 Toshiba Battery Co Ltd Polymer electrolyte secondary battery
US6048646A (en) 1998-07-21 2000-04-11 Ga-Tek Inc. Method for treating copper current collectors for Li-ion and/or Li-ion polymer batteries
US6802917B1 (en) 2000-05-26 2004-10-12 Integran Technologies Inc. Perforated current collectors for storage batteries and electrochemical cells, having improved resistance to corrosion
US8586861B2 (en) * 2003-01-12 2013-11-19 3Gsolar Photovoltaics Ltd. Solar cell device
JP4267401B2 (en) * 2003-08-06 2009-05-27 パナソニック株式会社 Electronics
JP2006040698A (en) * 2004-07-27 2006-02-09 Toyota Motor Corp Positive electrode for alkaline storage battery and alkaline storage battery
US8278011B2 (en) 2004-12-09 2012-10-02 Nanosys, Inc. Nanostructured catalyst supports
US7939218B2 (en) 2004-12-09 2011-05-10 Nanosys, Inc. Nanowire structures comprising carbon
US7842432B2 (en) 2004-12-09 2010-11-30 Nanosys, Inc. Nanowire structures comprising carbon
EP1829141B1 (en) 2004-12-09 2013-05-29 Nanosys, Inc. Nanowire-based membrane electrode assemblies for fuel cells
JP3850427B2 (en) 2005-03-22 2006-11-29 株式会社物産ナノテク研究所 Carbon fiber bonded body and composite material using the same
JP4873925B2 (en) 2005-10-28 2012-02-08 株式会社オハラ Lithium ion secondary battery and manufacturing method thereof
AU2006318658B2 (en) 2005-11-21 2011-07-28 Nanosys, Inc. Nanowire structures comprising carbon
JP2008270153A (en) * 2006-11-15 2008-11-06 Matsushita Electric Ind Co Ltd Method for manufacturing collector for nonaqueous secondary battery, method for manufacturing electrode for nonaqueous secondary battery, and nonaqueous secondary battery
JP2009054484A (en) * 2007-08-28 2009-03-12 Seiko Epson Corp All solid lithium secondary battery and its manufacturing method
US7745047B2 (en) 2007-11-05 2010-06-29 Nanotek Instruments, Inc. Nano graphene platelet-base composite anode compositions for lithium ion batteries
WO2009081704A1 (en) 2007-12-25 2009-07-02 Kao Corporation Composite material for positive electrode of lithium battery
JP5377946B2 (en) 2007-12-25 2013-12-25 花王株式会社 Composite material for lithium battery positive electrode
KR20100108556A (en) * 2008-01-29 2010-10-07 파나소닉 주식회사 Method for manufacturing electrochemical element electrode
EP2276698A1 (en) 2008-04-14 2011-01-26 Dow Global Technologies Inc. Lithium metal phosphate/carbon nanocomposites as cathode active materials for secondary lithium batteries
US8580432B2 (en) 2008-12-04 2013-11-12 Nanotek Instruments, Inc. Nano graphene reinforced nanocomposite particles for lithium battery electrodes
US9093693B2 (en) 2009-01-13 2015-07-28 Samsung Electronics Co., Ltd. Process for producing nano graphene reinforced composite particles for lithium battery electrodes
US20140370380A9 (en) 2009-05-07 2014-12-18 Yi Cui Core-shell high capacity nanowires for battery electrodes
JP5489063B2 (en) 2009-11-02 2014-05-14 株式会社Gsユアサ Positive electrode active material for lithium secondary battery, electrode for lithium secondary battery, and lithium secondary battery
US8778538B2 (en) 2009-11-06 2014-07-15 Northwestern University Electrode material comprising graphene-composite materials in a graphite network
US9431649B2 (en) 2009-11-23 2016-08-30 Uchicago Argonne, Llc Coated electroactive materials
US8652687B2 (en) 2009-12-24 2014-02-18 Nanotek Instruments, Inc. Conductive graphene polymer binder for electrochemical cell electrodes
JP5035408B2 (en) 2010-09-13 2012-09-26 新神戸電機株式会社 Lead acid battery and lead acid battery manufacturing method
US20120276434A1 (en) 2011-04-27 2012-11-01 Palo Alto Research Center Incorporated Highly flexible printed alkaline batteries based on mesh embedded electrodes
JP2012256486A (en) * 2011-06-08 2012-12-27 Toyota Motor Corp Solid battery

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4916035A (en) * 1987-08-06 1990-04-10 Matsushita Electric Industrial Co., Ltd. Photoelectrochemical cells having functions as a solar cell and a secondary cell
CN1532982A (en) * 2003-03-20 2004-09-29 ���µ�����ҵ��ʽ���� Combined battery
CN1993648A (en) * 2004-08-04 2007-07-04 法国圣戈班玻璃厂 Electrochemical system comprising at least one partial making up zone
CN102017281A (en) * 2008-04-28 2011-04-13 株式会社藤仓 Manufacturing method for photoelectric transducer, photoelectric transducer manufactured thereby, manufacturing method for photoelectric transducer module, and photoelectric transducer module manufactured thereby

Also Published As

Publication number Publication date
CN103326060A (en) 2013-09-25
US20130252089A1 (en) 2013-09-26
US9142358B2 (en) 2015-09-22
KR102033793B1 (en) 2019-10-17
JP2013225493A (en) 2013-10-31
JP6181948B2 (en) 2017-08-16
KR20130107241A (en) 2013-10-01

Similar Documents

Publication Publication Date Title
CN103326060B (en) Electrical storage device and electrical equipment
US10665888B2 (en) Power storage device and method for manufacturing the same
US11777108B2 (en) Power storage device and method for charging the same
JP6656434B2 (en) Power storage device
CN105765763B (en) Electricity accumulating unit and the electronic equipment for having the electricity accumulating unit
US10833309B2 (en) Method and system for replacing electrolyte solution of secondary battery
TWI622555B (en) Graphene oxide, positive electrode for nonaqueous secondary battery using graphene oxide, method of manufacturing positive electrode for nonaqueous secondary battery, nonaqueous secondary battery, and electronic device
CN103259049B (en) Electrical storage device
CN106099170B (en) Square lithium secondary battery
CN104781954B (en) The manufacture method of electrode for power storage device, electrical storage device and electrode for power storage device
US9859585B2 (en) Power storage device
US9673454B2 (en) Sodium-ion secondary battery
CN103915660B (en) Electrical storage device
US20140004412A1 (en) Secondary battery
JP6935459B2 (en) Electrodes and their manufacturing methods
US20130236781A1 (en) Negative electrode for secondary battery and secondary battery
US20150140396A1 (en) Power storage unit and electronic device
CN106356501A (en) Electrode, storage battery, power storage device, and electronic device
CN103633294A (en) Positive electrode for secondary battery, secondary battery, and method for fabricating positive electrode for secondary battery
US20150099161A1 (en) Power storage unit
KR20220088715A (en) Electrodes, secondary batteries, and electronic devices

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant