CN103311661B - Fractal ultra-wideband trap antenna with C band suppression function - Google Patents
Fractal ultra-wideband trap antenna with C band suppression function Download PDFInfo
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- CN103311661B CN103311661B CN201310181993.2A CN201310181993A CN103311661B CN 103311661 B CN103311661 B CN 103311661B CN 201310181993 A CN201310181993 A CN 201310181993A CN 103311661 B CN103311661 B CN 103311661B
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Abstract
The invention discloses a fractal ultra-wideband trap antenna with a C band suppression function, and relates to an ultra-wideband antenna. The fractal ultra-wideband trap antenna is provided with a substrate and an SMA (Sub-Miniature-A) joint, wherein an upper surface conductor layer is coated on the upper surface of the substrate; a lower surface conductor layer is coated on the lower surface of the substrate; a planar dipole array which is arranged on the upper surface conductor layer is provided with a high-order improved Sierpinski array structure; a micro-strip line feed part which is arranged on the upper surface conductor layer is used for providing main radiation feed for the planar dipole array; an undercut gap which is arranged on the lower surface conductor layer produces electromagnetic coupling with the planar dipole array to increase the bandwidth; a band suppression gap which is arranged on the lower surface conductor layer is symmetric Z-shaped for intercepting electric wave of a specific frequency radiated by the upper surface conductor layer to form a trap band required by a user; and the SMA joint is connected with the upper surface conductor layer and the lower surface conductor layer on the substrate. The fractal ultra-wideband trap antenna has the advantages of moderate size, large impedance bandwidth, low return loss, high gain, capability of effectively suppressing C band and simple structure and can be used inan ultra-wideband communication system.
Description
Technical field
The present invention relates to a kind of ultra-wideband antenna, particularly relate to a kind of fractal ultra-wideband trap antenna with C-band inhibit feature being applicable to suppress C-band ultra-wideband communication system.
Background technology
As a kind of transmission technology be widely used in remote sensing and radar, in recent years, ultra broadband (Ultra-wideband, UWB) technology receives the very big concern of wireless communication industry.Ultra-wideband antenna has the bandwidth of GHz magnitude, and voice and data communication may bring a kind of brand-new mode.The main advantage of UWB is that very bandwidth is wide, transmission rate is high, good confidentiality, antijamming capability are strong, energy consumption is low, all has important theory value and application prospect widely at numerous areas such as military field, the communications field and radar systems.The technological means solving the contradiction between high-speed Internet access demand and more and more crowded frequency resource allocation such as enterprise, family, public place will be become.
At present, super-broadband tech application widely, mainly comprise space flight and military field (as shipborne radar, satellite-based communications system, electronic reconnaissance and electronic countermeasures), and high-resolution, among a small circle, can penetrating body, the imaging system on wall and ground is (as medical imaging system, ground-penetrating radar, real-time monitoring system), hand-hold type radio ultra wide band system, indoor ultra-broadband system etc., this brings infinite development opportunity to Ultra-wideband Communication Technology, cause academia, the very big research enthusiasm of industrial circle, also larger challenge is proposed to its development and application simultaneously.
The research of ultra-wideband antenna achieves a lot of achievement, its technology also comparative maturity, but also have the space of improving further in the research of the resistive energy of the band of ultra-wideband antenna and configuration aspects, considerably less in C-band communication system (3.7 ~ 4.2GHz) research with resistive energy, and the trap frequency range of antenna relatively blindly, do not have can accurately suppress unwanted frequency range, have impact on the use of other frequency ranges.
Slot antenna is the new technology grown up in recent years with the combination with technology, and ground plate increases gap, can realize suppressing the trap function of C-band communication system by changing its CURRENT DISTRIBUTION preferably.
Summary of the invention
The object of the present invention is to provide that a kind of moderate dimensions, impedance bandwidth are large, return loss is low, gain is high, effectively suppress C-band, structure simple, can be used for the fractal ultra-wideband trap antenna with C-band inhibit feature of ultra-wideband communication system.
Stopband characteristic of the present invention is 3.58 ~ 4.53GHz, and the gain at center frequency point place suppresses to reach 10dB, and beyond stopband frequency band, antenna impedance bandwidth still remains on 3.95 ~ 13.57GHz, and impedance operator and phase center keep basicly stable.When 1/2 of the symmetrical gap length medium wavelength corresponding with stopband center frequency added is suitable, whole antenna can not produce effective radiation, and then realizes band-rejected.
The present invention is provided with substrate and sub-miniature A connector; The upper surface of described substrate is covered with upper surface conductor layer, and the lower surface of substrate is covered with lower surface conductor layer, and the plane dipole array being located at upper surface conductor layer improves Sierpinski array structure, for radiation electric wave with high-order; Be located at feed microstrip line part on upper surface conductor layer for providing primary radiation feed to plane dipole array; Be located at undercut shape gap on lower surface conductor layer and plane dipole array produces electromagnetic coupled to increase bandwidth, the wave band be located on lower surface conductor layer suppresses gap symmetrically zigzag, for intercepting the electric wave of the characteristic frequency of upper surface conductor layer radiation, form the trap wave band of user's request, described characteristic frequency is 3.58 ~ 4.53GHz; Described sub-miniature A connector is connected with lower surface conductor layer with the upper surface conductor layer of substrate respectively.
Described upper surface conductor layer can adopt copper conductor layer or silver conductor layer etc., and described lower surface conductor layer can adopt copper conductor layer or silver conductor layer etc.; The dielectric constant of described substrate can be 2 ~ 10, is preferably 4.4.
Described plane dipole array, is made up of concave shape paster in-line paster, two square patch and two tree-shaped pasters of Sierpinski high-order modified model; Described in-line patch width is 0.8 ± 0.2mm, and in-line paster two ends are arranged with the square patch and the fractal paster of high-order improvement Sierpinski structure that the length of side is 0.8 ± 0.2mm.
Described in-line paster horizontal length can be 12 ~ 16mm, is preferably 14mm.
Described high-order improves Sierpinski structure, and its exponent number can be 2,3,4,5 ..., be preferably 3; What Sierpinski was fractal is improved to the type borehole by Sierpinski fractal law with special Coupling effect substantially, and not coexisting on dipole wall with fractal exponent number forms fractal hole shape face array.
Described type borehole, its type is stacked together by 4 squares, the mode that stacks is for wherein 3 compact lower formation rectangles that are placed on side by side, another 1 is placed in above rectangle, position is adjustable, and these 4 square sizes are more adjustable than row, can be controlled the characteristic of this money antenna by the optimization of these micro-structurals.
Described feed microstrip line part is " 1 " font paster, " 1 " font paster upper end is connected with in the middle of described in-line paster, " 1 " font paster lower end and upper surface conductor layer lower end distance are 0, and " 1 " font patch width is 3.6 ± 0.6mm, and vertical length is 8 ± 1mm.
Horizontal length and the vertical length in described undercut shape gap are respectively 38 ± 4mm and 15 ± 2mm, described lower end, undercut shape gap and lower surface conductor layer lower end distance are 8 ± 1mm, all equal with lower surface conductor layer left and right sides distance, the horizontal length that lower end, described undercut shape gap falls in part can be 13 ~ 17mm, be preferably 15mm, vertical length can be 1.3 ~ 1.7mm, is preferably 1.5mm.Described undercut shape gap and lower surface conductor layer left and right sides distance can be 0.8 ~ 6mm, are preferably 2mm.
Described wave band suppresses gap, is positioned at below undercut shape gap, symmetrically zigzag, and wave band to suppress in gap distance on the left of gap, left side and lower conductor layer to be 0, and described wave band to suppress on the right side of in gap distance on the right side of gap and lower surface conductor layer to be 0.Described wave band suppresses gap size representative value desirable: gap width 1 ± 0.2mm, lower end horizontal gap length and upper end horizontal gap length are 4 ± 0.8mm, lower end horizontal gap and upper end horizontal gap distance 5 ± 1mm, upper and lower horizontal gap is all obtuse angle or the acute angle of 90 ° ± 10 ° with vertical clearance gap.
The antenna added behind the wave band suppression gap of particular design effectively can block the frequency range that ultra-wideband communications may produce interference, and ensure that the proper communication of other frequency ranges.Compared with conventional ultra-wideband antenna, the present invention has following advantage:
Fractal technology is applied to radiating element, combines with wide slot-coupled technology, by the complex optimum of series technique, achieve the miniaturization of antenna, the requirement of ultra-wideband communications can be met well.Owing to have employed above structure, the present invention has the impedance operator of 3.58 ~ 4.53GHz, gain at center frequency point place suppresses to reach 10dB, beyond stopband frequency band, antenna impedance bandwidth still remains on 3.95 ~ 13.57GHz, effectively can suppress the interference band of 5.15 ~ 5.825GHz, and then realize trap function.In sum, the present invention has that size is little, structure is simple, it is roomy to be with, radiation characteristic good, effectively can suppress interference band, little by such environmental effects, cost is low and the advantage such as integrated, can meet the requirement of ultra-wideband communication system.
Accompanying drawing explanation
Fig. 1 is the structure composition schematic diagram of the embodiment of the present invention.
Fig. 2 is the main TV structure schematic diagram of the embodiment of the present invention.
Fig. 3 is the back of the body TV structure schematic diagram of the embodiment of the present invention.
Fig. 4 is the left TV structure schematic diagram of the embodiment of the present invention.
Fig. 5 is return loss (S11) performance map of the embodiment of the present invention.In Figure 5, abscissa represents frequency (GHz), and ordinate represents return loss intensity (dB).
Fig. 6 is the H face directional diagram of the embodiment of the present invention.In figure 6, coordinate is polar coordinates.
Fig. 7 is the E face directional diagram of the embodiment of the present invention.In the figure 7, coordinate is polar coordinates.
Embodiment
Below in conjunction with embodiment and accompanying drawing, the invention will be further described.
See mark in Fig. 1 and 2, Fig. 11 for dielectric constant be 3.2, tangent loss is the medium substrate of 0.002, it is long is 40mm, and wide is 29mm, and height is 1.5mm.Layers of copper is covered with at the upper and lower surface of medium substrate, upper surface is the copper clad layers 2 that Sierpinski array structure paster is improved on the T-shaped paster that is made up of in-line paster and two square patch and three rank, wherein T-shaped paster horizontal width and vertical width are respectively 0.8 ± 0.2mm and 3.6 ± 0.6mm, horizontal length and vertical length are respectively 14 ± 2mm and 8 ± 1mm, the square patch length of side of T-shaped paster two ends symmetry is 0.8 ± 0.2mm, it is 12.5 ± 2.5mm that the Sierpinski array structure paster length of side is improved on three rank be connected with square patch, three rank are improved the length of side of square aperture 3 and the step length of convex shape 4 in Sierpinski array structure paster and are 0.8mm ± 0.2mm.The layer of medium substrate is the copper clad layers 7 having undercut shape gap 5 and wave band to suppress gap 6, undercut shape gap horizontal length and vertical length are respectively 38 ± 4mm and 15 ± 2mm, lower end, undercut shape gap and lower conductor layer lower end distance are 8 ± 1mm, all equal with lower conductor layer left and right sides distance, the horizontal length that lower end, concave shape gap falls in part is 15 ± 2mm, vertical length is 1.5 ± 0.2mm, and concave shape gap and lower conductor layer left and right sides distance are 1 ± 0.2mm; Wave band to suppress in gap distance on the left of gap, left side and lower conductor layer to be 0, wave band to suppress in gap distance on the right side of gap, right side and lower conductor layer to be 0, gap size is: gap width 1 ± 0.2mm, lower end horizontal gap length and upper end horizontal gap length are 4 ± 0.8mm, lower end horizontal gap and upper end horizontal gap distance 5 ± 1mm, upper and lower horizontal gap is all obtuse angle or the acute angle of 90 ° ± 10 ° with vertical clearance gap.The present invention adopts feed microstrip line mode, and described T-shaped paster vertical portion 8 is the feed microstrip line that characteristic impedance is 50 Ω.
See Fig. 4, described sub-miniature A connector 9 is connected with lower conductor layer with the upper conductor layer of high dielectric property matter substrate respectively.
See Fig. 5, as can be seen from Figure 5, stopband frequency band of the present invention is 3.52 ~ 4.34GHz, in the return loss (S11) of this frequency range internal antenna between 0 ~ 10dB, gain at center frequency point place suppresses to reach 10dB, and in other frequency band of 2.97 ~ 13.49GHz, the return loss (S11) of antenna is at below 10dB, can find out that the present invention effectively can block the frequency range that ultra-wideband communications may produce interference, and ensure that the proper communication of other frequency ranges.
See Fig. 6 and Fig. 7, Fig. 6 is E face figure, Fig. 7 is H face figure.As can be seen from Fig. 6 and 7, the present invention has directional radiation properties.The requirement of ultra-wideband communication system can be met.
Table 1 provides manufacture mismachining tolerance of the present invention to the influencing characterisitic of antenna.
Table 1
Note: in table, data have certain redundancy, has certain relevance between individual parameter, and what provide is equalization characteristic, can particular design according to demand.
Claims (12)
1. there is the fractal ultra-wideband trap antenna of C-band inhibit feature, it is characterized in that being provided with substrate and sub-miniature A connector; The upper surface of described substrate is covered with upper surface conductor layer, and the lower surface of substrate is covered with lower surface conductor layer, and the plane dipole array being located at upper surface conductor layer improves Sierpinski array structure, for radiation electric wave with high-order; Be located at feed microstrip line part on upper surface conductor layer for providing primary radiation feed to plane dipole array; Be located at undercut shape gap on lower surface conductor layer and plane dipole array produces electromagnetic coupled to increase bandwidth, the wave band be located on lower surface conductor layer suppresses gap symmetrically zigzag, for intercepting the electric wave of the characteristic frequency of upper surface conductor layer radiation, form the trap wave band of user's request, described characteristic frequency is 3.58 ~ 4.53GHz; Described sub-miniature A connector is connected with lower surface conductor layer with the upper surface conductor layer of substrate respectively;
Described high-order improves Sierpinski structure, its exponent number be greater than 1 natural number; It is the type borehole by Sierpinski fractal law with special Coupling effect that high-order improves Sierpinski array structure, and not coexisting on dipole wall with fractal exponent number forms fractal hole shape face array;
Described type borehole, its type is stacked together by 4 squares, the mode that stacks is for wherein 3 compact lower formation rectangles that are placed on side by side, another 1 is placed in above rectangle, position is adjustable, and these 4 square sizes are more adjustable than row, can be controlled the characteristic of this money antenna by the optimization of these micro-structurals.
2. there is the fractal ultra-wideband trap antenna of C-band inhibit feature as claimed in claim 1, it is characterized in that the dielectric constant of described substrate is 2 ~ 10.
3. there is the fractal ultra-wideband trap antenna of C-band inhibit feature as claimed in claim 2, it is characterized in that the dielectric constant of described substrate is 4.4.
4. there is the fractal ultra-wideband trap antenna of C-band inhibit feature as claimed in claim 1, it is characterized in that described plane dipole array, be made up of concave shape paster in-line paster, two square patch and two tree-shaped pasters of Sierpinski high-order modified model; Described in-line patch width is 0.8 ± 0.2mm, and in-line paster two ends are arranged with the square patch and the fractal paster of high-order improvement Sierpinski structure that the length of side is 0.8 ± 0.2mm.
5. there is the fractal ultra-wideband trap antenna of C-band inhibit feature as claimed in claim 1, it is characterized in that described in-line paster horizontal length is 12 ~ 16mm.
6. there is the fractal ultra-wideband trap antenna of C-band inhibit feature as claimed in claim 5, it is characterized in that described in-line paster horizontal length is 14mm.
7. have the fractal ultra-wideband trap antenna of C-band inhibit feature as claimed in claim 1, it is characterized in that described high-order improves Sierpinski structure, its exponent number is 3.
8. there is the fractal ultra-wideband trap antenna of C-band inhibit feature as claimed in claim 1, it is characterized in that described feed microstrip line part is for " 1 " font paster, " 1 " font paster upper end is connected with in the middle of described in-line paster, " 1 " font paster lower end and upper surface conductor layer lower end distance are 0, " 1 " font patch width is 3.6 ± 0.6mm, and vertical length is 8 ± 1mm.
9. there is the fractal ultra-wideband trap antenna of C-band inhibit feature as claimed in claim 1, it is characterized in that horizontal length and the vertical length in described undercut shape gap are respectively 38 ± 4mm and 15 ± 2mm, described lower end, undercut shape gap and lower surface conductor layer lower end distance are 8 ± 1mm, all equal with lower surface conductor layer left and right sides distance.
10. have the fractal ultra-wideband trap antenna of C-band inhibit feature as claimed in claim 9, it is characterized in that lower end, described undercut shape gap falls in horizontal length is partly 13 ~ 17mm, and vertical length is 1.3 ~ 1.7mm; Described undercut shape gap and lower surface conductor layer left and right sides distance are 0.8 ~ 6mm.
The 11. fractal ultra-wideband trap antennas as claimed in claim 10 with C-band inhibit feature, it is characterized in that the horizontal length that lower end, described undercut shape gap falls in part is 15mm, vertical length is 1.5mm; Described undercut shape gap and lower surface conductor layer left and right sides distance are 2mm.
The 12. fractal ultra-wideband trap antennas as claimed in claim 1 with C-band inhibit feature, it is characterized in that described wave band suppresses gap, be positioned at below undercut shape gap, symmetrically zigzag, wave band to suppress in gap distance on the left of gap, left side and lower surface conductor layer to be 0, described wave band to suppress in gap distance on the right side of gap, right side and lower surface conductor layer to be 0, described wave band suppresses gap width 1 ± 0.2mm, lower end horizontal gap length and upper end horizontal gap length are 4 ± 0.8mm, lower end horizontal gap and upper end horizontal gap distance 5 ± 1mm, upper end horizontal gap and lower end horizontal gap are all obtuse angle or the acute angle of 90 ° ± 10 ° with vertical clearance gap.
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| CN201310181993.2A CN103311661B (en) | 2013-05-16 | 2013-05-16 | Fractal ultra-wideband trap antenna with C band suppression function |
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| CN201310181993.2A CN103311661B (en) | 2013-05-16 | 2013-05-16 | Fractal ultra-wideband trap antenna with C band suppression function |
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| CN106876956A (en) * | 2015-12-13 | 2017-06-20 | 哈尔滨飞羽科技有限公司 | A kind of ultra-wideband monopole antenna based on Xie Erbinsiji point convex geometry |
| CN106876999A (en) * | 2015-12-13 | 2017-06-20 | 哈尔滨飞羽科技有限公司 | A kind of new monopole ultra-wideband antenna for opening rhombus groove |
| CN112821077B (en) * | 2020-12-31 | 2023-07-14 | 辽宁工程技术大学 | Double-notch fractal ultra-wideband antenna with reconfigurable characteristic |
| CN113156375B (en) * | 2021-03-30 | 2023-04-07 | 西南电子技术研究所（中国电子科技集团公司第十研究所） | Passive phase modulation chip of millimeter wave phased array T/R assembly |
| CN114094329B (en) * | 2021-11-22 | 2023-10-03 | 江苏科技大学 | Symmetrical top Peano fractal loaded microstrip patch antenna |
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