CN103311175B - Polysilicon fuse lithographic method - Google Patents
Polysilicon fuse lithographic method Download PDFInfo
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- CN103311175B CN103311175B CN201210068145.6A CN201210068145A CN103311175B CN 103311175 B CN103311175 B CN 103311175B CN 201210068145 A CN201210068145 A CN 201210068145A CN 103311175 B CN103311175 B CN 103311175B
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Abstract
The invention provides a kind of polysilicon fuse lithographic method; part is prepared to obtain polysilicon fuse for etching; the described photoresist prepared part and comprise discontinuous setting on polysilicon fuse, the dielectric layer on described polysilicon fuse, the liner protective layer on described dielectric layer and described liner protective layer, is provided with aluminium block in described liner protective layer.After method of the present invention is mainly included in and has etched the very first time, again set the time that will etch, continue etching action according to the set time subsequently, final acquisition has the fuse of the residual oxygen of target expecting thickness.
Description
Technical field
The present invention relates to semiconductor preparing process, particularly relate to polysilicon fuse lithographic technique.
Background technology
Fuse (fuse) is the key part and component in electronic product, its function can be sketched and switch into controlling spare memory (Redundancy Memory), or is used in radio circuit (RF) to provide adjustable resistance and capacitance characteristic (RC trimming).Fuse is also often used in safety code (Security Code), the low character code of electric label (Low Bit Count) data storing.Traditional fuse comprises three kinds: the metal fuse, the polysilicon fuse that blow with big current, and with the metal fuse that laser blows.
In existing technology of preparing, layer of metal is added to the product of polysilicon fuse structure, the etching process obtaining fuse directly completes etching by liner protective layer (also can be called pad) corrosion one step.Fig. 1 give do not start liner protective layer corrosion before prepare part.As shown in the figure, fuse 10 is provided with layer insulation (ILD, interlayer dielectric) layer 12, is liner protective layer 14 on interlayer insulating film 12, liner protective layer is then partly provided with photoresist 16.Liner protective layer is not arranged the place of photoresist 16 for the etching in subsequent technique.In the example that this figure provides, liner protective layer 14 is also provided with aluminium block 140.According to prior art, etching machine bench is directly aimed at position 142 corresponding with fuse on liner protective layer and is etched.Because position 140 is known apart from the distance of fuse, and the etching speed of etching machine bench is known, therefore can preset the etch period of etching machine bench.Suppose that etching required time is T, then, after etching has etched T time section after starting, namely stop the etching of etching machine bench.Fig. 2 prepares the structure of part after the etching of T time section shown in Fig. 1.As figure, the liner protective layer above fuse 10 and most ILD layer are etched, and the residual oxygen 120 of the target only needed is stayed on fuse 10.Due to prepare part only have layer of metal layer and on fuse oxide thickness thinner, therefore use lithographic method as above easily to cause the residual oxygen on polysilicon fuse to be etched away.As is known to the person skilled in the art, fuse performance and the residual oxygen of target that it is left over closely related.If there are differences between the residual oxygen left in etching and the residual oxygen of target, the performance of fuse will be affected.Special composition graphs 1 and Fig. 2 of wanting illustrates, etching as above is carried out to expose aluminium block 140 with etching liner protective layer simultaneously.In the present invention, utilize liner protective layer corrosion one step etching to obtain fuse by being called with the process etching to obtain fuse to liner protective layer and ILD layer while obtaining aluminium block 140 at etching liner protective layer.
To sum up, existing one step etching in, etching machine bench in etching be a moment on earth, be difficult to regulate, therefore cannot avoid residual oxygen layer thickness and the differentiated situation of expectation target thickness.
Summary of the invention
In view of this, the invention provides a kind of polysilicon fuse lithographic method, to solve above and other problem.Polysilicon fuse lithographic method of the present invention; part is prepared to obtain polysilicon fuse for etching; the described photoresist prepared part and comprise discontinuous setting on polysilicon fuse, the dielectric layer on described polysilicon fuse, the liner protective layer on described dielectric layer and described liner protective layer; aluminium block is provided with in described liner protective layer; it is characterized in that, described method comprises:
The liner protective layer and dielectric layer that are positioned at fuse and this aluminium block top position are etched by etching machine bench simultaneously,
After having etched the very first time, control etching machine bench and stopped etching,
Measure the distance between fuse end face and the bottom surface of groove formed above fuse and due to etching,
The time that next will etch is set according to the residual oxygen thickness of target on the etching speed of measured distance, etching machine bench and the fuse of expection, and
Control etching machine bench etching until the set time that next will etch terminates.
Preferably, method of the present invention, the wherein said very first time is the liner protective layer that etching machine bench starts to etch aluminium block top position, until expose aluminium block and the residue on aluminium block is etched the time totally used.
Preferably, method of the present invention, the etching of wherein carrying out within the described very first time is liner protective layer dry etching.
Preferably, method of the present invention, the etching that wherein etching machine bench carries out within the time that next described setting will etch is oxidation dry method etching.
By method of the present invention, accurately can control the etching depth of etching machine bench, ensure the thickness of the residual oxygen of target.
Accompanying drawing explanation
Fig. 1 illustrate do not start liner protective layer corrosion before prepare part.
Fig. 2 prepares the structural representation of part after the etching through T time section shown in Fig. 1.
Fig. 3 carries out preparing the structural representation of part at certain one-phase in the process etched according to lithographic method of the present invention.
Fig. 4 is the structural representation according to preparing part after lithographic method etching of the present invention.
Embodiment
Now further illustrate the present invention by reference to the accompanying drawings.It will be appreciated by those skilled in the art that, just in conjunction with concrete execution mode, purport of the present invention is described below, does not limit the present invention at this point.The scope that the present invention advocates is determined by appended claim, any do not depart from spirit of the present invention amendment, change and all should be contained by claim of the present invention.
Below to carry out corrosion so that polysilicon fuse lithographic method of the present invention to be described to the part of preparing shown in Fig. 1.
First, by etching machine bench control site 142 and position 144, liner protective layer is etched, position 142 and position 144 all between the photoresist of discontinuous setting, wherein position 142 above fuse 10 position 144 above aluminium block 140.According to an example of the present invention, with dry etching, liner protective layer is etched; As known to those skilled, for the corrosion of position 142 and position 144 when proceeding to aluminium block 140, because etchant gas is different with the corrosion rate of aluminium block 140 to interlayer insulating film 12, cause being etched in that to etch into etching speed after aluminium block 140 more a lot of slowly than the speed of the etching of carrying out for position 142 for position 144.
After having etched the very first time, stop the etching work of etching machine bench.Wherein, the very first time is the liner protective layer that etching machine bench starts to etch aluminium block 140 top position, until expose aluminium block 140 and the residue on aluminium block 140 is etched the time totally used.As shown in Figure 3, the very first time is that etching machine bench etches into position 145 aluminium block 140 time used from position 144.The etching speed of etching machine bench is known; and position 144(is as shown in Figure 1) thickness of distance and position 145 can measure; therefore control the etching of etching machine bench to liner protective layer by the control time, that is terminate to obtain the etching terminal to aluminium block 140 by the etch period preset.Generally speaking, in the etching process to aluminium block 140, certain etch period can be increased again on the etch period calculated according to thickness and etching speed, so that the titanium nitride on aluminium block is etched totally.
In the etching of first time period, etching machine bench etches the liner protective layer at position 142 place and a small amount of dielectric layer simultaneously.Composition graphs 3, after etching machine bench stops etching, utilizes thickness board to measure the distance H between fuse 10 end face 101 and the bottom surface 170 of groove 14 formed above fuse 10 and due to etching.
According to the distance between the end face 101 measured and bottom surface 170, the etching speed of etching machine bench, and the target residual oxygen thickness D on the fuse 10 of expection, the etch period that the fuse that next has for acquisition the residual oxygen of target that thickness is D will carry out can be calculated, hereinafter referred to as the second time.
Subsequently, control etching machine bench work, the dielectric layer continued above to fuse etches until the second time terminated, that is stops etching after etching for the second time.Etching within the second time is oxide etch method.
Fig. 4 prepares part after having etched according to method of the present invention, and wherein fuse 10 has the residual oxygen of target of expection thickness.
In the method for the invention, dielectric layer is interlayer insulating film.
Method of the present invention; two etching processes are divided into by the etching of the liner protective layer above fuse and dielectric layer; so that after the first etching process terminates, adjust the time of the second etching process, thus obtain the fuse of the residual oxygen of target with expection thickness exactly.
Claims (3)
1. a polysilicon fuse lithographic method; part is prepared to obtain polysilicon fuse for etching; the described photoresist prepared part and comprise discontinuous setting on polysilicon fuse, the dielectric layer on described polysilicon fuse, the liner protective layer on described dielectric layer and described liner protective layer; aluminium block is provided with in described liner protective layer; it is characterized in that, described method comprises:
The liner protective layer and dielectric layer that are positioned at fuse and described aluminium block top position are etched by etching machine bench simultaneously,
After having etched the very first time, control etching machine bench and stop etching, wherein, the described very first time has been the liner protective layer that etching machine bench starts to etch aluminium block top position, until expose aluminium block and the residue on aluminium block etched the time totally used,
Measure the distance between fuse end face and the bottom surface of groove formed above fuse and due to etching,
The time that next will etch is set according to the residual oxygen thickness of target on the etching speed of measured distance, etching machine bench and the fuse of expection,
Control etching machine bench and proceed etching until the set time that next will etch terminates.
2. method according to claim 1, is characterized in that, the etching of carrying out within the described very first time is liner protective layer dry etching.
3. method according to claim 1, is characterized in that, the etching that etching machine bench carries out within the time that next described setting will etch is oxidation dry method etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210068145.6A CN103311175B (en) | 2012-03-15 | 2012-03-15 | Polysilicon fuse lithographic method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210068145.6A CN103311175B (en) | 2012-03-15 | 2012-03-15 | Polysilicon fuse lithographic method |
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| CN103311175A CN103311175A (en) | 2013-09-18 |
| CN103311175B true CN103311175B (en) | 2015-08-05 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1239820A (en) * | 1998-05-11 | 1999-12-29 | 摩托罗拉公司 | Method for forming integrated circuit |
| CN101211779A (en) * | 2006-12-29 | 2008-07-02 | 联华电子股份有限公司 | Method for forming fuse window on semiconductor substrate web by two- stage etching mode |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU2003285846A1 (en) * | 2003-12-23 | 2005-07-14 | Systems On Silicon Manufacturing Co. Pte. Ltd. | Method of etching a semiconductor device |
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2012
- 2012-03-15 CN CN201210068145.6A patent/CN103311175B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1239820A (en) * | 1998-05-11 | 1999-12-29 | 摩托罗拉公司 | Method for forming integrated circuit |
| CN101211779A (en) * | 2006-12-29 | 2008-07-02 | 联华电子股份有限公司 | Method for forming fuse window on semiconductor substrate web by two- stage etching mode |
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| CN103311175A (en) | 2013-09-18 |
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