CN103308498B - The controlled uniaxial strain bringing device in a kind of direction for two-dimensional layer nano material - Google Patents
The controlled uniaxial strain bringing device in a kind of direction for two-dimensional layer nano material Download PDFInfo
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- CN103308498B CN103308498B CN201310177949.4A CN201310177949A CN103308498B CN 103308498 B CN103308498 B CN 103308498B CN 201310177949 A CN201310177949 A CN 201310177949A CN 103308498 B CN103308498 B CN 103308498B
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Abstract
The present invention discloses the controlled uniaxial strain bringing device in a kind of direction for two-dimensional layer nano material, comprise: universal stage, micrometer screw mandrel, removable blade, removable blade base, circular sample pallet, circular substrate and outside blade, described universal stage comprises rotating disk and perimeter; The height that the thimble of described micrometer screw mandrel stretches out controls by rotating knob, stretches out along thimble direction for promoting removable blade; Described removable blade base is for supporting removable blade; Described circular sample pallet is for placing described circular substrate; In described circular substrate, preparation has the sample of two-dimensional layer nano material; Described outside blade is provided with two blades, two blades of outside blade and the top edge of removable blade are used for applying axial stress to sample.The present invention, by adopting circular substrate and universal stage, enables the blade direction of applying three-point bending rotate relative to sample plane, finally reaches effect sample being applied to uniaxial strain along different directions.
Description
Technical field
The present invention relates to the bringing device of uniaxial strain, particularly the controlled uniaxial strain bringing device in a kind of direction for two-dimensional layer nano material.
Background technology
In recent years, take Graphene as physics, the chemical property of two-dimensional layer nano material due to uniqueness of representative, become development one of research field very rapidly.At present except Graphene, this kind of material also comprises individual layer, double-deck molybdenum disulfide (MoS
2), tungsten disulfide (WS
2), two selenizing molybdenum (MoSe
2), two tungsten selenide (WSe
2) etc.Current focuses to these material Quality Research.With individual layer MoS
2for example, the indirect semiconductor of its body material to be band gap be 1.2eV, and individual layer MoS
2be transformed into the direct band-gap semicondictor material that energy is 1.83eV, there is extraordinary photoelectric field application prospect.MoS
2body material has the history of decades as excellent kollag, and within 2010, American scientist adopts mechanical stripping method first to prepare individual layer MoS
2and report its better optical character.Sweden scientist successfully produces based on individual layer MoS
2transistor, disclose the broad prospect of application of this material.Subsequently, the Research Team of Massachusetts Institute of Technology (MIT) is based on double-deck MoS
2produce various electronic, comprise the ring oscillator of inverter, Sheffer stroke gate, storer and relative complex.At present, generally believe that this two-dimensional layer nano material is the future electronic material of great potential.This kind of material character under uniaxial strain is studied, significant to the physical characteristics and expansive approach space understanding them.
Uniaxial strain bringing device, refers to Graphene, the individual layer MoS to adopting mechanical stripping method to obtain
2in research Deng two-dimensional layer nano material, the device of uniaxial strain is applied to sample.By the uniaxial strain making sample be stretched to the mechanical bend of backing material.Sample is under uniaxial strain effect, and grating constant will become, and causes corresponding lattice vibration mode and band structure all can change.Measure trans cis photoisomerization, Raman spectrum with the change of uniaxial strain, can the physical property of accurate response specimen material.
Be merely able to realize a certain specific direction at relative sample to the device of two-dimensional layer nano material sample applying uniaxial strain at present.This configuration mostly uses strip-lining bottom material, adopt mechanical stripping method in the substrate between position prepare sample.Adopt the physical construction of three-point bending to add deformation to strip-lining bottom application, thus along substrate long side direction, uniaxial strain is being applied to sample.The sample prepared due to mechanical stripping method is once obtaining, and the relative angle of itself and substrate is just fixed, and therefore the applying method of this uniaxial strain can only realize in of a sample random direction.Existing program cannot realize controllably on sample different directions, applying uniaxial strain.
Summary of the invention
The technical problem to be solved in the present invention is exactly overcome the defect that prior art can only apply uniaxial strain on sample direction, proposes a kind of uniaxial strain bringing device, can apply uniaxial strain to the sample of two-dimensional layer nano material along different directions.
In order to solve the problem, the invention provides a kind of uniaxial strain bringing device, comprising: universal stage, micrometer screw mandrel, removable blade, removable blade base, circular sample pallet, circular substrate and outside blade, wherein,
Described universal stage comprises rotating disk and perimeter; The thimble of described micrometer screw mandrel is positioned at the center of circle of described rotating disk, and is connected with the bottom of described removable blade, and the height that described thimble stretches out controls by rotating knob, and thimble stretches out along thimble direction for promoting removable blade; The inner side of described removable blade base is connected with micrometer screw mandrel, and outside is connected with described rotating disk, and is fixed together with removable blade, for supporting removable blade; Described circular sample pallet is connected with the perimeter of universal stage, for placing described circular substrate; In described circular substrate, preparation has the sample of two-dimensional layer nano material; Described outside blade is positioned at the outside of described universal stage, is connected with described rotating disk, described outside blade is provided with two blades; Two blades of described outside blade and the top edge of removable blade are used for applying axial stress to sample.
Preferably, said apparatus also has following characteristics:
Described circular sample pallet is provided with single-open, for loading and unloading described circular substrate.
Preferably, said apparatus also has following characteristics:
The fringe region subscript of described circular substrate is marked with short-term, and on the fringe region of circular sample pallet, also mark has corresponding short-term, for marking the angle measured and rotate.
Preferably, said apparatus also has following characteristics:
The bottom of described removable blade is provided with circular hole; The thimble of described micrometer screw mandrel is through the annular opening contacts bottom the center of described rotating disk and removable blade.
Preferably, said apparatus also has following characteristics:
Two blades of described outside blade are parallel with the top edge of removable blade.
Preferably, said apparatus also has following characteristics:
The sample of described two-dimensional layer nano material adopts mechanical stripping method to be prepared in the region, the center of circle of described circular substrate.
The present invention, by adopting circular substrate and universal stage, enables the blade direction of applying three-point bending rotate relative to sample plane, finally reaches effect sample being applied to uniaxial strain along different directions.
Accompanying drawing explanation
Fig. 1 is the one-piece construction schematic diagram of the strain bringing device of the embodiment of the present invention;
Fig. 2 is the circular substrate schematic diagram of the strain bringing device of the embodiment of the present invention;
Fig. 3 is the circular sample pallet schematic diagram of the strain bringing device of example of the present invention;
Fig. 4 is the individual layer MoS of the embodiment of the present invention
2material fluorescence circular polarization polarization is along variation diagram under the different uniaxial strain of a certain specific direction;
Fig. 5 is the individual layer MoS of the embodiment of the present invention
2the variation diagram of material fluorescence circular polarization polarization under the uniaxial strain that different directions is identical;
Wherein, 101-micrometer screw mandrel, the thimble of 1011-micrometer screw mandrel, 102-universal stage, the rotating disk of 1021-universal stage, the perimeter of 1022-universal stage, 103-circular sample pallet, the single-open of 1031-circular sample pallet, 201-removable blade base, 202-removable blade, circular hole bottom 2021-removable blade, 203-outside blade, 204-screw, 205-circular substrate.
Embodiment
Hereinafter will be described in detail to embodiments of the invention by reference to the accompanying drawings.It should be noted that, when not conflicting, the embodiment in the application and the feature in embodiment can combination in any mutually.
As shown in Figure 1, the uniaxial strain bringing device of the embodiment of the present invention comprises: universal stage 102, micrometer screw mandrel 101, removable blade 202, removable blade base 201, circular sample pallet 103, circular substrate 205 and outside blade 203, wherein,
Universal stage 102 comprises rotating disk 1021 and perimeter 1022, and the angle that rotating disk 1021 rotates can read from the number of degrees of universal stage 102; The thimble 1011 of micrometer screw mandrel 101 is positioned at the center of circle of rotating disk 1021, the height that thimble 1011 stretches out accurately can control by rotating knob, and read by scale, thimble 1011 is for promoting removable blade 202 along thimble side 1011 to stretching out, and micrometer screw mandrel stiff end is connected with rotating disk 1021 by screw buckle; Removable blade base 201 is made up of metallic aluminium, is connected inside it with micrometer screw mandrel 101, and outside is connected with rotating disk 1021, and is fixed together with removable blade 202, for supporting removable blade 202; Removable blade 202 is made by metallic steel, the screw 204 being installed with spring is used to be fixed to removable blade base 201, the top edge of removable blade 202 points to the center of circle of circular substrate 205, the bottom of removable blade 202 is provided with circular hole 2021, and the center that the thimble 1011 of micrometer screw mandrel 101 passes rotating disk 1021 contacts with the circular hole 2021 bottom removable blade; Circular sample pallet 103 is connected with the perimeter 1022 of universal stage, for placing circular substrate 205; In circular substrate 205, preparation has the sample of two-dimensional layer nano material; Outside blade 203 is made by metallic steel, and be positioned at the outside of universal stage 102, be connected with rotating disk 1021, can rotate with rotating disk 1021 relative to perimeter 1022, outside blade 203 is provided with two blades, these two blades contact with circular substrate 205; Regulate two blades of outside blade 203 parallel with the top edge of removable blade 202 when designing assembling, to apply axial stress to sample.
Below to adopt MoS
2sample is that example further illustrates the present invention.
Individual layer MoS
2sample adopts mechanical stripping method in the preparation of region, transparent organic glass circular substrate 205 center of circle, as shown in Figure 2.The edge of circular substrate 205 marks short-term in advance and is used for determining relative angle.Adopt mechanical stripping method to prepare the realization of two-dimensional layer nano material, for this area, common scientific research personnel is known, therefore not in this repeat specification.
With individual layer MoS
2the circular substrate 205 of sample is positioned over circular sample pallet 103, and circular sample pallet 103 as shown in Figure 3.Sample can be loaded and unloaded easily from the single-open 1031 of circular sample pallet 103.Circular substrate 103 edge marks short-term in advance, corresponding with the short-term at circular substrate 205 edge, is used for determining their relative angle.
By rotating the knob of micrometer screw mandrel 101, control the length that removable blade 202 stretches out, due to the acting in conjunction of outside blade 203, circular substrate 205 can bend deformation.Circular substrate 205 preparation has individual layer MoS
2there is the uniaxial strain stretched in the side of sample, and this strain transfer to individual layer MoS
2sample.Complete after the corresponding measurement under this direction uniaxial strain, rotate the knob of micrometer screw mandrel 101, shorten its thimble 1011 extension elongation.Because the spring and fixed screw 204 of fixing removable blade 202 act on, the extension elongation of removable blade 202 is reduced, and circular substrate 205 recovers flat condition.
By turntable rotation angle of universal stage 102, keep their relative angle constant by circular substrate 205 and the short-term at circular sample pallet 103 edge.Because outside blade 203 is all connected with the rotating disk of universal stage 102 with removable blade 202, therefore their jointly same relative to rotary sample angles.Repeat said process, along other direction, uniaxial strain is applied to sample.The angle applying uniaxial strain can obtain from the reading of universal stage 102, and the size of uniaxial strain accurately can be repeated by the number of degrees of micrometer screw mandrel 101.
Fig. 4, for when relative sample angle is 0, records sample in the reduction process of differently strained lower photoluminescence circular polarization polarization with strain.Wherein horizontal ordinate is the distance of micrometer screw mandrel 101 precession.
Fig. 5 is micrometer screw mandrel 101 precession distance Strain H when being 3.5mm, along individual layer MoS
2sample different directions applies the photoluminescence circular polarization polarization that onesize uniaxial strain records.Horizontal ordinate is the direction that uniaxial strain applies.
In other embodiments of the invention, wherein outside blade, removable blade also can be made up of other materials, are preferably the metal that hardness is high.
Uniaxial strain bringing device provided by the invention can be used for the strain in scientific research, two-dimensional layer nano material being applied to different directions, is applicable to adopting the mode such as trans cis photoisomerization, Raman spectrum to material Quality Research under uniaxial strain.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (6)
1. for the controlled uniaxial strain bringing device in direction of two-dimensional layer nano material, it is characterized in that, comprising: universal stage, micrometer screw mandrel, removable blade, removable blade base, circular sample pallet, circular substrate and outside blade, wherein,
Described universal stage comprises rotating disk and perimeter; The thimble of described micrometer screw mandrel is positioned at the center of circle of described rotating disk, and is connected with the bottom of described removable blade, and its height stretched out controls by rotating knob, and thimble stretches out along thimble direction for promoting removable blade; The inner side of described removable blade base is connected with micrometer screw mandrel, and outside is connected with described rotating disk, and is fixed together with removable blade, for supporting removable blade; Described circular sample pallet is connected with the perimeter of universal stage, for placing described circular substrate; In described circular substrate, preparation has the sample of two-dimensional layer nano material; Described outside blade is positioned at the outside of described universal stage, is connected with described rotating disk, is provided with two blades; Two blades of described outside blade and the top edge of removable blade are used for applying axial stress to sample.
2. device as claimed in claim 1, is characterized in that,
Described circular sample pallet is provided with single-open, for loading and unloading described circular substrate.
3. device as claimed in claim 1 or 2, is characterized in that,
The fringe region subscript of described circular substrate is marked with short-term, and on the fringe region of circular sample pallet, also mark has corresponding short-term, for marking the angle measured and rotate.
4. device as claimed in claim 1 or 2, is characterized in that,
The bottom of described removable blade is provided with circular hole; The thimble of described micrometer screw mandrel is through the annular opening contacts bottom the center of described rotating disk and removable blade.
5. device as claimed in claim 4, is characterized in that,
Two blades of described outside blade are parallel with the top edge of removable blade.
6. device as claimed in claim 4, is characterized in that,
The sample of described two-dimensional layer nano material adopts mechanical stripping method to be prepared in the region, the center of circle of described circular substrate.
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| CN105606443A (en) * | 2016-03-22 | 2016-05-25 | 中国科学技术大学 | Device for applying stress to single crystal sample with flexibility |
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| CN103698214B (en) * | 2013-12-30 | 2016-08-17 | 北京科技大学 | A kind of measure the method for material Micro Mechanical Properties under stress effect |
| CN105679528B (en) * | 2014-11-18 | 2017-12-12 | 中国科学院宁波材料技术与工程研究所 | A kind of making apparatus of the regulatable large area flexible thin magnetic film of magnetic anisotropy |
| GB201704950D0 (en) * | 2017-03-28 | 2017-05-10 | Univ Manchester | Thin film material transfer method |
| CN109883346B (en) * | 2019-03-14 | 2020-09-22 | 北京大学 | Device and method for measuring three-order nonlinear photoelastic tensor of two-dimensional material based on optical triple frequency multiplication |
| CN113375581B (en) * | 2021-04-30 | 2022-12-13 | 西安电子科技大学 | Device and method for testing strain of low-dimensional material in different directions |
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| CN85201254U (en) * | 1985-04-01 | 1986-06-25 | 复旦大学 | Mechanical measuring device for bending intensity of single crystal material |
| GB2368644A (en) * | 2000-06-23 | 2002-05-08 | Clan Products | Tester for applying tensile force to a fixing |
| CN202141647U (en) * | 2011-06-24 | 2012-02-08 | 赵宏伟 | Cross-scale micro-nano-stage normal-position three-point bending mechanics performance testing platform |
| CN102788633A (en) * | 2012-08-16 | 2012-11-21 | 锐马（福建）电气制造有限公司 | Anti-unbalanced-loading weighing sensor |
| CN103663354B (en) * | 2012-09-11 | 2016-07-20 | 北京大学 | Micro/nano array and the application in micro/nano material standard bending strain loads thereof |
| CN102928308B (en) * | 2012-10-26 | 2014-07-09 | 吉林大学 | Full-strain measurement type in-situ nanometer impress/scratch testing device |
| CN102928492B (en) * | 2012-11-14 | 2015-01-21 | 天津博硕东创科技发展有限公司 | Analytical system for precise preparation and in-situ test of titanium dioxide nanotube array |
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| CN105606443A (en) * | 2016-03-22 | 2016-05-25 | 中国科学技术大学 | Device for applying stress to single crystal sample with flexibility |
| CN105606443B (en) * | 2016-03-22 | 2019-01-22 | 中国科学技术大学 | It is a kind of to flexible single crystal samples apply stress device |
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