CN103296579B - Surface-breakdown-type vacuum switch trigger electrode - Google Patents
Surface-breakdown-type vacuum switch trigger electrode Download PDFInfo
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- CN103296579B CN103296579B CN201310172666.0A CN201310172666A CN103296579B CN 103296579 B CN103296579 B CN 103296579B CN 201310172666 A CN201310172666 A CN 201310172666A CN 103296579 B CN103296579 B CN 103296579B
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Abstract
The invention discloses a surface-breakdown-type vacuum switch trigger electrode comprising a low-voltage electrode, a molybdenum ferrule, a ceramic tube, a metal trigger electrode, a molybdenum ring, a semiconductor coating layer and a trigger electrode groove. The ceramic tube is arranged in a through hole between the low-voltage electrode and the center of the molybdenum ferrule and tightly contacts with the molybdenum ferrule to guarantee electrical insulation between the low-voltage electrode and the metal trigger electrode; the metal trigger electrode is arranged in a through hole at the centers of the ceramic tube and the molybdenum ring to guarantee equal potential of the molybdenum ring and the metal trigger electrode; the molybdenum ring is arranged on the upper portion of the ceramic tube; the semiconductor coating layer is arranged on the tube wall of the ceramic tube between the molybdenum ferrule and the molybdenum ring; the direction of the semiconductor coating layer is in accordance with the direction of a gap electric field applied by a high-voltage electrode; the trigger electrode groove is formed in the low-voltage electrode on the periphery of the molybdenum ferrule, the molybdenum ring and the semiconductor coating layer. The surface-breakdown-typed vacuum switch trigger electrode can solve problems of short service life, poor high temperature resistance and easiness in damage by ablation of the existing trigger electrodes.
Description
Technical field
The invention belongs to high voltage electrical engineering and electric apparatus technology and technical field of pulse power, more specifically, relate to a kind of trigger electrode of surface breakdown type vacuum switch.
Background technology
Triggered Vacuum Switch (being called for short vacuum switch afterwards) utilizes vacuum as the interelectrode main gap dielectric of high-low voltage and arc-extinguishing medium, and adopt the trigger electrode control switch of particular design to close.The trigger electrode structure of vacuum switch mainly contains two kinds: surface breakdown type and field breakdown type.Field breakdown type vacuum switch is comparatively near due to trigger electrode and cathode distance on the one hand, and technique makes more difficult control; On the other hand require that puncture voltage is higher, there is dispersed large problem, so use more at present or be surface breakdown type vacuum switch.
There is following problem in the trigger electrode of current surface breakdown type vacuum switch: 1) after main gap conducting, and condensation after metallic vapour splash, can cover along finishing coat, cause along face short circuit, trigger and lost efficacy, thus switch finishes useful life; 2) when triggering surface breakdown, the energy of plasma that field emitted electron and charged particle are formed is lower, and diffusion space is limited, cannot enter main gap in large quantities rapidly, is difficult to ensure that triggering is reliable and stable.(3) traditional oxygenless copper material trigger electrode, resistance to elevated temperatures is not good, and mechanical strength is not high, and easy ablation damages.
Summary of the invention
For above defect or the Improvement requirement of prior art, the invention provides a kind of trigger electrode of surface breakdown type vacuum switch, its object is to solve the useful life that existing trigger electrode exists short, be difficult to ensure to trigger reliable and stable, that resistance to elevated temperatures is not good, not high, the easy ablation of mechanical strength damages problem.
For achieving the above object, according to one aspect of the present invention, provide a kind of trigger electrode of surface breakdown type vacuum switch, comprise low pressure pole, molybdenum lasso, earthenware, metal trigger electrode, molybdenum ring, semi-conductor coated layer, trigger electrode groove, earthenware is arranged in the through hole at low pressure pole and molybdenum ferrule central place, and with molybdenum lasso close contact, metal trigger electrode is arranged in the through hole of earthenware and molybdenum ring center, molybdenum ring is arranged at the top of earthenware, semiconductor coat is arranged on the tube wall of earthenware between molybdenum lasso and molybdenum ring, the axis direction of semiconductor coat is parallel with the gap electrical field direction that high-pressure stage applies, trigger electrode groove is arranged at molybdenum lasso, molybdenum ring, the low pressure of semiconductor coat periphery extremely goes up, it is the groove that low pressure extremely goes up, it is open " loudspeaker " structure.
Preferably, low pressure pole is made up of refractory metal material, and shape is axial symmetry type, and center is provided with axial through hole.
Preferably, molybdenum lasso and molybdenum ring are made up of Mo, and shape is axial symmetry type, and center is provided with axial through hole.
Preferably, metal trigger electrode is made up of exotic material, and shape is cylinder.
Preferably, earthenware adopts the refractory ceramics of resistance to ablation to make, and shape is the different cylinder of two ends diameter, and center is provided with axial through hole.
Preferably, low pressure pole, molybdenum lasso, molybdenum ring, metal trigger electrode and earthenware are coaxial configuration.
In general, compared with prior art, the present invention can obtain following beneficial effect to the above technical scheme conceived by the present invention:
1. be arranged on the tube wall of earthenware between molybdenum lasso and molybdenum ring as the semiconductor coat triggered along face, consistent with main direction of an electric field along face axis direction, metallic vapour particulate is mainly moved along the parallel direction along over glaze line, the probability of molten drop splash condensation covering along face coat can be reduced, avoid along face coat short circuit, thus increase the life-span of vacuum switch.
2. trigger electrode groove enhances internal field's distortion, and define open " loudspeaker " structure, such initial plasma acquisition electric field energy that can promote from field emission effect, increase the speed of initial plasma and the space tactics of diffusion, ensure that the plasma at switch conduction initial stage promptly enters the vacuum medium interior formation self-maintained discharge of main gap, thus reduce puncture voltage and the breakdown time delay of main gap, reduce delay variation, ensure reliable and stable triggering.
3, molybdenum lasso and molybdenum ring constitute in fact negative electrode along face trigger electrode and anode, metal molybdenum has good electric conductivity and arc ablation resistance performance, processability is better than tungsten, and price is also relatively cheap, therefore can overcome the problem of the not resistance to ablation of trigger electrode in more economical way.
Accompanying drawing explanation
Fig. 1 is the section of structure of the trigger electrode of a kind of vacuum switch of the present invention.
In all of the figs, identical Reference numeral is used for representing identical element or structure, wherein:
1. low pressure pole; 2. molybdenum lasso, 3. earthenware; 4. molybdenum ring; 5. metal trigger electrode; 6. semiconductor coat; 7. trigger electrode groove; 8. high-pressure stage.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.In addition, if below in described each execution mode of the present invention involved technical characteristic do not form conflict each other and just can mutually combine.
Fig. 1 is the section of structure of the trigger electrode of a kind of vacuum switch of the present invention.
The trigger electrode of vacuum switch adopts coaxial configuration in shape.Low pressure pole 1 is axial symmetry parts, and center is provided with the different through hole of two diameters.
Molybdenum lasso 2 is axial symmetry parts, and center is provided with through hole, and molybdenum lasso 2 is arranged in the through hole that in low pressure pole 1, diameter is larger.
Earthenware 3 is set to the different cylinder of two ends diameter, axial centre position is provided with through hole, earthenware 3 stretches into from the through hole of low pressure pole 1 and molybdenum lasso 2, match with the through hole of low pressure pole 1 and the through hole of molybdenum lasso 2, to ensure earthenware 3 and molybdenum lasso 2 close contact, connect closely reliable both being ensured by electric welding, ensure low pressure pole 1 and molybdenum lasso 2 equipotential simultaneously.
Molybdenum ring 4 is axial symmetry parts, and center is provided with through hole, and molybdenum ring 4 is arranged on earthenware top, and edge diameter is identical with earthenware 3 upper end diameter.Molybdenum lasso 2 and molybdenum ring 4 constitute in fact negative electrode along face trigger electrode and anode, can overcome the problem of the not resistance to ablation of trigger electrode in more economical way.
Earthenware 3 isolates molybdenum lasso 2 and molybdenum ring 4, to ensure the insulation on electrically of metal trigger electrode 5 and low pressure pole 1.
Metal trigger electrode 5 is axial symmetry parts, is arranged in the through hole of earthenware 3 and molybdenum ring 4, ensures to connect closely reliable, ensure molybdenum ring 4 and metal trigger electrode 5 equipotential simultaneously by electric welding.
Earthenware 3, for isolating the current potential of low pressure pole 1 and metal trigger electrode 5, plays a part electric insulation.
Semiconductor coat 6 to be arranged between molybdenum lasso 2 and molybdenum ring 5 on earthenware 3 tube wall, smears evenly and thickness is less, ensures that the earthenware 3 of band semiconductor coat 6 is identical with molybdenum ring 4 diameter.In the present embodiment, semiconductor coat 6 adopts iron oxide material to make.In other embodiments, can not use semi-conductor coated layer 6, the surface glaze layer only relying on earthenware also can.
Trigger electrode groove 7 is arranged at molybdenum lasso 2, molybdenum ring 4 with on the low pressure pole 1 of semiconductor coat 6 periphery, it is the groove on low pressure pole 1, form open " loudspeaker " structure, in the present embodiment, trigger electrode groove 7 is cross-sectional openings grooves towards 45 degree of oblique angles of main gap, also be axisymmetric, effect is formation uneven distortion electric field, increases the diffusion usefulness of the plasma charged particles that creeping discharge is formed.
Molybdenum lasso 2 adopts electric welding technology to realize be mechanically connected with molybdenum ring 4 and earthenware 3 with metal trigger electrode 5 with low pressure pole 1, earthenware 3, and to ensure to connect closely between the two, thus molybdenum lasso 2 conducts with metal trigger electrode 5 with low pressure pole 1 and molybdenum ring 4.
Low pressure pole 1 adopts the refractory metal material of resistance to ablation to make, as chromiumcopper.
Molybdenum lasso 2 and molybdenum ring 4 adopt molybdenum bar to make, easily processing, Heat stability is good.
Earthenware 3 adopts the refractory ceramics of resistance to ablation to make.Metal trigger electrode 5 adopts exotic material (such as oxygen-free copper) to make, easily processing and setting, Heat stability is good.
Semiconductor coat 6 is recommended to adopt iron oxide material to make, more charged particle and electronics can be produced during surface breakdown, simultaneously the axis direction of semiconductor coat 6 and gap electrical field direction (represent with E the gap electrical field intensity that high-pressure stage 8 applies in Fig. 1, electric field strength direction when solid line represents that high-pressure stage 8 is positive polarity, electric field strength direction when dotted line represents that high-pressure stage 8 is negative polarity) parallel, the probability that after reducing gap conducting to the full extent, molten drop splash condensation is got on, thus the life-span of improving vacuum switch.
Operation principle of the present invention is as follows: in the trigger electrode course of work of vacuum switch, there is creeping discharge in the semiconductor coat 6 between molybdenum lasso 2 and molybdenum ring 4, and produce more plasma, accelerate promptly to enter in the vacuum medium in gap via the non-uniform electric field in trigger electrode groove 7, change the Electric Field Distribution of main gap, thus the puncture voltage in gap can be reduced, ensure the reliable and stable of triggering.
Those skilled in the art will readily understand; the foregoing is only preferred embodiment of the present invention; not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (6)
1. a trigger electrode for surface breakdown type vacuum switch, is made up of low pressure pole, molybdenum lasso, earthenware, metal trigger electrode, molybdenum ring, semi-conductor coated layer and trigger electrode groove, it is characterized in that,
Earthenware is arranged in the through hole at low pressure pole and molybdenum ferrule central place, and with molybdenum lasso close contact;
Metal trigger electrode is arranged in the through hole of earthenware and molybdenum ring center;
Molybdenum ring is arranged at the top of earthenware;
Semiconductor coat is arranged on the tube wall of earthenware between molybdenum lasso and molybdenum ring, and the axis direction of semiconductor coat is parallel with the gap electrical field direction that high-pressure stage applies;
Trigger electrode groove be arranged at molybdenum lasso, molybdenum ring, semiconductor coat periphery low pressure extremely go up;
In the trigger electrode course of work of vacuum switch, the semiconductor coat generation creeping discharge of molybdenum lasso and molybdenum interannular, and produce more plasma, accelerate promptly to enter in the vacuum medium in gap via the non-uniform electric field in trigger electrode groove, change the Electric Field Distribution of main gap, thus the puncture voltage in gap can be reduced, ensure the reliable and stable of triggering.
2. trigger electrode as claimed in claim 1, it is characterized in that, low pressure pole is made up of refractory metal material, and shape is axial symmetry type, and center is provided with axial through hole.
3. trigger electrode as claimed in claim 1, it is characterized in that, molybdenum lasso and molybdenum ring are made up of Mo, and shape is axial symmetry type, and center is provided with axial through hole.
4. trigger electrode as claimed in claim 1, it is characterized in that, metal trigger electrode is made up of exotic material, and shape is cylinder.
5. trigger electrode as claimed in claim 1, it is characterized in that, earthenware adopts the refractory ceramics of resistance to ablation to make, and shape is the different cylinder of two ends diameter, and center is provided with axial through hole.
6. trigger electrode as claimed in claim 1, it is characterized in that, low pressure pole, molybdenum lasso, molybdenum ring, metal trigger electrode and earthenware are coaxial configuration.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310172666.0A CN103296579B (en) | 2013-05-10 | 2013-05-10 | Surface-breakdown-type vacuum switch trigger electrode |
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| CN201310172666.0A CN103296579B (en) | 2013-05-10 | 2013-05-10 | Surface-breakdown-type vacuum switch trigger electrode |
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| CN103296579B true CN103296579B (en) | 2015-05-20 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| EP2884517A1 (en) * | 2013-12-11 | 2015-06-17 | ABB Technology AG | AMF contact for vacuum interrupter with inforcement element |
| CN104023461A (en) * | 2014-05-26 | 2014-09-03 | 西安交通大学 | Spark discharge self-excitation jet plasma generating device |
| CN104617491B (en) * | 2015-01-21 | 2017-11-24 | 华中科技大学 | A kind of surface breakdown type two is to rod pole structure Triggered Vacuum Switch |
| CN105792497B (en) * | 2016-01-27 | 2017-12-26 | 西安交通大学 | A kind of plasma jet triggers anti-yaw damper rotating the arc electrode used for high-voltage switch |
| CN105873347B (en) * | 2016-05-12 | 2017-11-17 | 华中科技大学 | A kind of plasma jet switching device |
| CN110913552B (en) * | 2019-11-20 | 2022-04-19 | 中国人民解放军空军工程大学 | Plasma synthetic jet actuator used under wide air pressure condition |
| CN110913555B (en) * | 2019-12-06 | 2021-02-26 | 西安交通大学 | Plasma jet switch |
| CN111681905B (en) * | 2020-07-06 | 2021-09-24 | 大连理工大学 | Surface flashover vacuum trigger switch of 'gear-shaped' trigger electrode structure |
| CN112735903B (en) * | 2020-12-21 | 2022-06-07 | 西安交通大学 | Trigger vacuum arc-extinguishing chamber with high-current breaking capacity and working method thereof |
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| GB1084138A (en) * | 1965-01-28 | |||
| GB8510441D0 (en) * | 1985-04-24 | 1985-05-30 | Vacuum Interrupters Ltd | High current switch contacts |
| JPH01186780A (en) * | 1988-01-18 | 1989-07-26 | Toshiba Corp | Vacuum trigger gap device |
| CN100492573C (en) * | 2007-02-12 | 2009-05-27 | 西安交通大学 | High energy vacuum CROWBAR switch based on high permitivity planar flashover |
| CN102130670B (en) * | 2011-03-15 | 2013-03-27 | 华中科技大学 | Multipole field breakdown type vacuum trigger switch |
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Effective date of registration: 20160512 Address after: 430074, Optics Valley headquarters, 35 Optics Valley Road, East Lake hi tech Development Zone, Hubei, Wuhan, 4, 101 Patentee after: Wuhan Zhi Ruijie Electrical Technology Co. Ltd Address before: 430074 Hubei Province, Wuhan city Hongshan District Luoyu Road No. 1037 Patentee before: Huazhong University of Science and Technology |