CN103293186A - Method for manufacturing metal oxide semiconductor (MOS) gas sensor array with porous network structure - Google Patents
Method for manufacturing metal oxide semiconductor (MOS) gas sensor array with porous network structure Download PDFInfo
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Abstract
The invention discloses a method for manufacturing a metal oxide semiconductor (MOS) gas sensor array with a porous network structure. The method is used for manufacturing a gas sensor array based on multiple different MOS sensor elements with the porous network structure in situ on a same chip based on a sacrificial template. The method is a preparation method for integrating material devices, the preparation process comprises silk-screen printing, micro drip and calcining process, the characteristics that a CNTs (carbon nanotubes) template material is high in toughness, is unlikely to be mechanically damaged and is easily subjected to heat treatment removal are utilized, the material serves as the sacrificial template on the element surface, a sensitive material with the porous network structure can be prepared in situ on the surface of the chip, and the special porous network structure of the sensitive material is prevented from being damaged, so that the excellent sensitive property of the sensitive material with the porous network structure can be fully exerted. The sensor array obtained by the method is fast in response, has high selectivity and is used for testing gases such as formaldehyde, methanol, toluene and ammonia gas and concentrations thereof.
Description
Technical field
The invention belongs to the gas sensor technical field, be specifically related to a kind of preparation method of metal-oxide semiconductor (MOS) (MOS) gas sensor array of porous network structure, this method is a kind of based on sacrifice carbon nano-tube (CNTs) template, and the integrated preparation method of material devices (SPMJC method) of zygomite reticulated printing (SP), droplet notes (MJ) and calcining (C) technology.
Background technology
The MOS gas sensor has simple in structure, cheap characteristics, is used widely in fields such as environmental monitoring, food and public safety, Aero-Space, process control, medicals diagnosis on disease.But the MOS gas sensor has the broad spectrum response feature to gas, can't offer an explanation gaseous species, and namely selectivity is relatively poor, becomes to hinder the bottleneck that mos sensor is applied.Improve at present its optionally effective ways be that a plurality of gas sensors based on different MOS materials are integrated into sensor array, this space static fixing that need realize sensitive material in the manufacturing array process prepares.Two kinds of array manufacturing technologies are arranged at present: serigraphy and droplet are annotated.Adopt repeatedly chromatography strategy of traditional screen printing technique combination, can produce the sensor array based on a plurality of different sensitive material sensor elements, its sensitive membrane has porous structure, specific surface area is big, susceptibility is high and response is fast, but its complex technical process, cost is high and be difficult to the scale manufacturing; Adopt droplet to annotate technology, can conveniently produce gas sensor array, low cost of manufacture is easy to the scale manufacturing, but because sensitive material is dense film, gas sensor array susceptibility difference and low-response.
On the other hand, making the MOS sensitive membrane on the array have porous network structure, can obtain bigger serface, high activity, significantly improve susceptibility and the speed of response of sensor, is the effective ways that preparation has the material of special construction and sacrifice template.Traditional sensors or array manufacturing method are will prepare earlier to have the special construction material and make slurry by ball milling, adopt screen printing technique that it is printed onto on the substrate then, form sensitive membrane by sintering, encapsulation again, but make prepared special construction destroyed in its manufacturing process easily.
If based on sacrificing template, with effectively combination of two kinds of array manufacturing technologies (serigraphy and droplet are annotated), maximize favourable factors and minimize unfavourable ones, and make that material is synthetic to carry out synchronously with the sensor array manufacturing, and realize integratedly, then can overcome the defective of traditional sensors array manufacturing method, manufacture method by simple and effective MOS gas sensor array, just can keep the special construction of sensitive membrane at array, produce high selectivity, hypersensitivity and the sensor array that responds fast.
Summary of the invention
The invention provides a kind of manufacture method of MOS gas sensor array of porous network structure, its purpose is both to guarantee that special construction is not destroyed in device manufacturing processes, can produce the sensor array based on a plurality of different sensitive material sensor elements again easily, to improve selectivity, susceptibility and the speed of response of array.
The manufacture method of a kind of MOS gas sensor array provided by the invention, this method comprises the steps:
The 1st step pre-service:
Screen printing electrode and well heater successively on the ceramic substrate of cleaning, and carry out successively through levelling, drying and sintering processes, sensor array substrate obtained;
The 2nd step serigraphy CNTs mould material:
On the pretreated sensor array substrate of process, serigraphy CNTs mould material film obtains CNTs mould material membrane array, and removes the organism that adds in the printing slurry by thermal treatment;
The 3rd step instillation precursor solution or colloidal sol:
Respectively at each CNTs mould material film of resulting CNTs mould material membrane array instil different precursor solution or colloidal sol, and ultrasonic processing, make solution or colloidal sol infiltrate CNTs mould material film;
Among the present invention, use M
1C
1-M
2C
2-...-M
iC
i-...-M
nC
nRepresent each precursor solution or colloidal sol, wherein, n is the number of element on the array, and n is the integer more than or equal to 2, and Mi represents the metallic element in the presoma, and the oxide that requires this metallic element correspondence is the semiconductor to gas sensitization, C
iRepresent metallic element concentration in corresponding precursor solution or the colloidal sol 100 times, M
iC
iCorresponding to instiling to i element of array; I represents the sequence number of element on the array, and its span is 1 to n, C
iSpan be 1 to 100mol/L;
The substep thermal treatment of the 4th step:
CNTs mould material membrane array after will handling through the 3rd step carry out first step thermal treatment, make slaine in the precursor solution or the organism of containing metal element change into corresponding MOS, and sintering, perhaps make the oxidesintering in the precursor sol; Carry out the second step thermal treatment then, namely continue heating, the CNTs template is removed by abundant oxidation, obtain the gas sensor array that has the different mos sensor elements of porous network structure based on a plurality of.
Preparation method of the present invention sacrifices template based on CNTs, combine serigraphy, droplet notes and sintering process, the MOS that makes at the sensor array surface in situ has porous network structure, and this method can overcome traditional sensors array preparation method's defective, prepares the sensor array of high selectivity.The present invention compares with material with prior art, and the present invention has the following advantages:
1. solved the shortcoming of the special construction of traditional sensor manufacture method (material is synthetic to be separated with the device manufacturing) destructible material;
Traditional sensor manufacturing process is to synthesize the sensitive material with special construction earlier, makes then and packaging.And MOS is hard brittle material, poor toughness, and this just causes the special construction of prepared MOS destroyed in device manufacturing processes easily, makes special construction not perform to effect.The present invention adopts the material devices integral preparation method, the sensitive material that directly has special construction in the preparation of sensor array surface in situ, material preparation and device manufacturing are combined, avoided the special construction of material destroyed in the process that device is made.
2. only prepare sensor array based on a plurality of different sensitive material sensor elements with a serigraphy, and sensitive material has porous network structure;
Traditional serigraphy once can only be printed a kind of material, if will prepare sensor array based on a plurality of different sensitive material sensor elements, just needs repeatedly chromatography, this just makes technology and complexity thereof, sometimes or even be difficult to realize.The present invention is based on CNTs and sacrifice template, zygomite reticulated printing and droplet are annotated technology, only annotate in conjunction with follow-up droplet with a serigraphy again and just can produce the sensor array that has the different mos sensor elements of porous network structure based on a plurality of at the sensor array surface in situ with sintering processes.
3. prepared sensor array has preferably selectivity and single sensitive element also has high susceptibility and the fast speed of response;
At present, sensor array can only respond reducibility gas, is difficult to go out respectively the specific category of gas.Among the present invention, the sensor array of making by parameter Z n15-Co05-In10-Sn20 among the embodiment 1 is to HCHO, CH
3COCH
3, C
7H
8And NH
3The response difference bigger, have higher selectivity, can be used for distinguishing gaseous species, and single sensitive element also has the characteristics of hypersensitivity and fast-response speed.
4. provided by the present invention having shown better based on a plurality of gas sensor arrays with different mos sensor elements of porous network structure responds faster, and have preferably optionally advantage, be used for test and comprise multiple gases and concentration thereof such as formaldehyde, methyl alcohol, toluene, ammonia.
Description of drawings
Fig. 1 is the preparation flow synoptic diagram based on the sensor array of a plurality of different mos sensor elements with porous network structure, among the figure, and the 1-ceramic substrate, before the 2-electrode, 3-well heater, 4-CNTs mould material film, 5-presoma/CNTs complexes membrane, 6-porous network structure MOS film;
Fig. 2 be according to 4 element arrays after embodiment 1 pre-service (synoptic diagram of 6mm * 6mm), wherein, (a) overview of a plurality of 4 array devices (serigraphy object), (b) single 4 device array zoomed-in views;
Fig. 3 wherein, (a) is low power FSEM photo for according to for be screen-printed to the surperficial FSEM photo of the CNTs mould material film on the array according to embodiment 1, (b) is high power FSEM photo;
Fig. 4 is the sensor array surface picture in kind that is made of 4 kinds of MOS gas sensors with porous network structure according to embodiment 1 preparation, wherein, and the ZnO gas sensor film of I-porous network structure, the Co of II-porous network structure
3O
4The gas sensor film, the In of III-porous network structure
2O
3The gas sensor film, the SnO of IV-porous network structure
2The gas sensor film;
4 kinds of MOS (ZnO, Co with porous network structure that Fig. 5 lists for the sensor array that makes according to embodiment 1
3O
4, In
2O
3And SnO
2) FSEM photo and the EDX collection of illustrative plates of sensitive element, wherein, be ZnO gas sensor film surface FSEM photo (a) and (b), (c) be the EDX collection of illustrative plates of ZnO gas sensor film, (d) be Co (e)
3O
4Gas sensor film surface FSEM photo (f) is Co
3O
4The EDX collection of illustrative plates of gas sensor film is In (g) and (h)
2O
3Gas sensor film surface FSEM photo (i) is In
2O
3The EDX collection of illustrative plates of gas sensor film is SnO (j) and (k)
2Gas sensor film surface FSEM photo (l) is SnO
2The EDX collection of illustrative plates of gas sensor film;
Fig. 6 is among the embodiment 1, from polylith In
2O
3The In that collects on the film
2O
3The XRD collection of illustrative plates of powder;
Fig. 7 is the In of the graded porous structure that makes according to embodiment 1
2O
3Single sensitive element is under 300 ℃, to variable concentrations formaldehyde gas air-sensitive response curve;
Fig. 8 is the array of being made up of four kinds of different MOS sensitive elements that makes according to embodiment 1 histogram to the gas with various response.
Embodiment
Sacrifice template based on CNTs, at first utilize screen printing technique at the array that obtains through pretreated ceramic substrate being constituted by CNTs mould material film, the recycling droplet is annotated technology and inject different precursor solutions or colloidal sol respectively on each CNTs mould material film of array, remove the CNTs template by thermal treatment at last, original position the has obtained part heredity sensor array based on a plurality of different mos sensor elements of CNTs template porous network structure.The process synoptic diagram of this method as shown in Figure 1.In this invention, the selection of sensitive material presoma is very crucial, the oxide that requires contained metallic element correspondence is the semiconductor to gas sensitization, heat decomposition temperature is lower than CNTs and begins oxidizing temperature (450 ℃-550 ℃), and can be dissolved in certain solvent or be prepared into colloidal sol, alternative presoma has: Co (NO
3)
26H
2O, In (NO
3)
35H
2O, Zn (CH
3COO)
22H
2O, Cu (NO
3)
23H
2O, Fe (NO
3)
39H
2O and SnCl
45H
2Metal salt solutions such as O, SnO
2, WO
3And TiO
2Deng MOS colloidal sol, Ti (OC
4H
9)
4The organic solution of containing metal elements such as (butyl titanates), but be not limited thereto, as long as meet the demands.Solvent can be water, ethanol, n-propanol etc., but is not limited to this, as long as can dissolve or disperse presoma.
Preparation method involved in the present invention comprises the steps:
(1) the gas sensor array substrate is carried out pre-service:
Screen printing electrode and well heater successively on the ceramic substrate of cleaning, and carry out successively through levelling, drying and sintering processes;
(2) through on the pretreated sensor array substrate, serigraphy CNTs mould material film obtains the array that is made of CNTs mould material film, and removes the organism that adds in the printing slurry by thermal treatment;
(3) required precursor solution or the colloidal sol of preparation, water is preferred solvent, droplet is annotated different presomas on each CNTs mould material film of resulting CNTs mould material membrane array respectively, and ultrasonic processing, makes solution (or colloidal sol) infiltrate the CNTs film;
M
1C
1-M
2C
2-...-M
iC
i-...-M
nC
nRepresent each precursor solution or colloidal sol, wherein, n is the number of element on the array, M
iMetallic element in the expression presoma, C
iRepresent metallic element concentration in corresponding precursor solution or the colloidal sol 100 times; The span of i is 1 to n, and the metallic element concentration range of precursor solution or colloidal sol is 0.01mol/L-1mol/L, then C
iSpan be 1 to 100mol/L, metallic element concentration is preferably 0.05mol/L-0.2mol/L.M
iC
iCorrespondence instils to i element of array; Dropped amount is to determine that by the area of the resulting CNTs film of serigraphy dropped amount is 0.1 μ L/mm
2-0.3 μ L/mm
2, be preferably 0.2 μ L/mm
2
(4) array that is made of different presomas/CNTs complexes membrane is carried out substep thermal treatment, make slaine in the precursor solution or the organism of containing metal element change into corresponding MOS, and make oxidesintering, remove CNTs again, can obtain the gas sensor array that has the different mos sensor elements of porous network structure based on a plurality of.
Heat treatment process should be the substep heating:
The holding temperature T of first step heating
1Satisfy: T
d＜T
1＜T
o, not oxidized to guarantee CNTs, and the organism of presoma slaine or containing metal element is decomposed into corresponding MOS and be attached to the CNTs surface, wherein, T
dFor the organism of slaine or containing metal element begins to resolve into the temperature of MOS, T
oBegin the temperature of oxidation for CNTs; By first step heating, make slaine in the precursor solution or the organism of containing metal element change into corresponding MOS, and sintering, or directly make the oxidesintering in the precursor sol.
The holding temperature T of second step heating
2Satisfy: T
2＞T
o, removed by abundant oxidation to guarantee the CNTs template, wherein, T
oBegin the temperature of oxidation for CNTs.
Below in conjunction with accompanying drawing the specific embodiment of the present invention is described further.Need to prove at this, understand the present invention for the explanation of these embodiments for helping, but do not constitute limitation of the invention.In addition, below in each embodiment of described the present invention involved technical characterictic just can not make up mutually as long as constitute conflict each other.
Embodiment 1:
The Zn15-Co05-In10-Sn20 sensor array.Substrate is carried out pre-service: ultrasonic cleaning Al
2O
3Ceramic substrate, drying, serigraphy gold electrode on the substrate of cleaning, levelling, drying, in 850 ℃ of sintering of furnace temperature, serigraphy ruthenium-oxide well heater, levelling, drying, in 850 ℃ of sintering of furnace temperature, the sensor array substrate synoptic diagram after the pre-service is as shown in Figure 2; Serigraphy obtains the array that is made of CNTs mould material film: through on the pretreated sensor array substrate, the film of serigraphy CNTs mould material, obtain the array that constituted by CNTs mould material film, and removed the organism that printing adds in the slurry in 2 hours 350 ℃ of following thermal treatments, the CNTs mould material film surface FSEM photo of gained is as shown in Figure 3; Used presoma is respectively the Zn (CH of 0.15mol/L
3COO)
22H
2The O aqueous solution, the Co (NO of 0.05mol/L
3)
26H
2The O aqueous solution, the In (NO of 0.1mol/L
3)
35H
2The SnO of O aqueous solution and 0.2mol/L
2The hydrosol; Heat treatment process is: T
1Under=350 ℃, insulation 120min, T
2Under=650 ℃, insulation 10min.
Fig. 4 is prepared sensor array surface pictorial diagram, and this array is that the gas sensor by 4 kinds of different materials systems constitutes.For whether the product of observation station preparation has inherited the porous network structure of CNTs template, the film surface of having adopted the preparation of scanning electron microscope (FESEM FEI Sirion200) observation post, its FSEM and EDX are as shown in Figure 5.Find that 4 kinds of films are made up of crisscross accurate nanofiber substantially, loose porous, the mean diameter of each fiber is about 50nm.Form for the element of analyzing the gained film, film is carried out EDX analyze, component has Al (belonging to aluminum oxide substrate), O and corresponding metallic element, and explanation may be corresponding MOS.For whether further checking obtains corresponding MOS, from a plurality of In
2O
3Collect In on the film
2O
3Powder carries out XRD and characterizes, the result as shown in Figure 6, as can be seen, all diffraction peaks all belong to the In of body-centered cubic structure
2O
3(grating constant a=1.009nm is corresponding to standard card 6-0416), and each diffraction peak all compares sharply, shows that this material has crystallinity preferably.In order to study single sensitive element air-sensitive performance, In
2O
3Element is under 300 ℃, to the response recovery curve of 1-100ppm HCHO gas as shown in Figure 7, find that this element all shows response-recovery characteristic preferably to the formaldehyde gas of variable concentrations, response and recovery rate are all very fast, has the speed of response faster, and along with the increase of formaldehyde gas concentration, the response of this sensor also increases thereupon.Fig. 8 shows the sensor array that is made of above four kinds of different materials system sensitive elements and is listed under 300 ℃, to HCHO, the C of 100ppm
7H
8, NH
3And CH
3COCH
3The response contrast situation of four kinds of gases can find that the selectivity of gained array is better.
Embodiment 2
The Zn10-Co10-In10-Sn10 sensor array.Carry out according to top step, used presoma is respectively the Zn (CH of 0.1mol/L
3COO)
22H
2The O aqueous solution, the Co (NO of 0.1mol/L
3)
26H
2The O aqueous solution, the In (NO of 0.1mol/L
3)
35H
2The SnO of O aqueous solution and 0.1mol/L
2The hydrosol; Heat treatment process is: T
1Under=350 ℃, insulation 120min, T
2Under=650 ℃, insulation 10min.
The Zn01-Co01-In01-Sn01 sensor array.Carry out according to top step, used presoma is respectively the Zn (CH of 0.01mol/L
3COO)
22H
2The O aqueous solution, the Co (NO of 0.01mol/L
3)
26H
2The O aqueous solution, the In (NO of 0.01mol/L
3)
35H
2The SnO of O aqueous solution and 0.01mol/L
2The hydrosol; Heat treatment process is: T
1Under=350 ℃, insulation 120min, T
2Under=650 ℃, insulation 10min.
Embodiment 4
The Zn100-Co100-In100-Sn100 sensor array.Carry out according to top step, used presoma is respectively the Zn (CH of 1mol/L
3COO)
22H
2The O aqueous solution, the Co (NO of 1mol/L
3)
26H
2The O aqueous solution, the In (NO of 1mol/L
3)
35H
2The SnO of O aqueous solution and 1mol/L
2The hydrosol; Heat treatment process is: T
1Under=350 ℃, insulation 120min, T
2Under=650 ℃, insulation 10min.
Embodiment 5
The Cu20-Fe15-Ti10-W05 sensor array.Carry out according to top step, used presoma is respectively the Cu (NO of 0.2mol/L
3)
23H
2The O aqueous solution, the Fe (NO of 0.15mol/L
3)
39H
2The O aqueous solution, the Ti (OC of 0.1mol/L
4H
9)
4The WO of ethanolic solution and 0.05mol/L
3N-propanol colloidal sol; Heat treatment process is: T
1Under=400 ℃, insulation 120min, T
2Under=650 ℃, insulation 10min.
Embodiment 6
The Cu10-Fe10-Ti10-W10 sensor array.Carry out according to top step, used presoma is respectively the Cu (NO of 0.1mol/L
3)
23H
2The O aqueous solution, the Fe (NO of 0.1mol/L
3)
39H
2The O aqueous solution, the Ti (OC of 0.1mol/L
4H
9)
4The WO of ethanolic solution and 0.1mol/L
3N-propanol colloidal sol; Heat treatment process is: T
1Under=400 ℃, insulation 120min, T
2Under=650 ℃, insulation 10min.
Embodiment 7
The Cu01-Fe01-Ti01-W01 sensor array.Carry out according to top step, used presoma is respectively the Cu (NO of 0.01mol/L
3)
23H
2The O aqueous solution, the Fe (NO of 0.01mol/L
3)
39H
2The O aqueous solution, the Ti (OC of 0.01mol/L
4H
9)
4The WO of ethanolic solution and 0.01mol/L
3N-propanol colloidal sol; Heat treatment process is: T
1Under=400 ℃, insulation 120min, T
2Under=650 ℃, insulation 10min.
Embodiment 8
The Cu100-Fe100-Ti100-W100 sensor array.Carry out according to top step, used presoma is respectively the Cu (NO of 100mol/L
3)
23H
2The O aqueous solution, the Fe (NO of 100mol/L
3)
39H
2The O aqueous solution, the Ti (OC of 100mol/L
4H
9)
4The WO of ethanolic solution and 100mol/L
3N-propanol colloidal sol; Heat treatment process is: T
1Under=400 ℃, insulation 120min, T
2Under=650 ℃, insulation 10min.
In the present invention, it is several that solvent and presoma are not limited among the embodiment listed this, as long as the oxide of slaine correspondence is semiconductor material, and can dissolves in a kind of solvent or disperse and get final product.Prepared sensor array also is not limited to 4 given element arrays of the present invention, if the element forming array of other numbers such as integrated 6,8 is also at the row of protection.
The above is preferred embodiment of the present invention, but the present invention should not be confined to the disclosed content of this embodiment and accompanying drawing.So everyly do not break away from the equivalence of finishing under the spirit disclosed in this invention or revise, all fall into the scope of protection of the invention.
Claims (9)
1. the preparation method of a MOS gas sensor array, this method comprises the steps:
The 1st step pre-service:
Screen printing electrode and well heater successively on the ceramic substrate of cleaning, and carry out successively through levelling, drying and sintering processes, sensor array substrate obtained;
The 2nd step serigraphy CNTs mould material:
On the pretreated sensor array substrate of process, serigraphy CNTs mould material film obtains CNTs mould material membrane array, and removes the organism that adds in the printing slurry by thermal treatment;
The 3rd step instillation precursor solution or colloidal sol:
Respectively at each CNTs mould material film of resulting CNTs mould material membrane array instil different precursor solution or colloidal sol, and ultrasonic processing, make solution or colloidal sol infiltrate CNTs mould material film;
Among the present invention, use M
1C
1-M
2C
2-...-M
iC
i-...-M
nC
nRepresent each precursor solution or colloidal sol, wherein, n is the number of element on the array, and n is the integer more than or equal to 2, M
iMetallic element in the expression presoma, the oxide that requires this metallic element correspondence is the semiconductor to gas sensitization, C
iRepresent metallic element concentration in corresponding precursor solution or the colloidal sol 100 times, M
iC
iCorresponding to instiling to i element of array; I represents the sequence number of element on the array, and its span is 1 to n, C
iSpan be 1 to 100mol/L;
The substep thermal treatment of the 4th step:
CNTs mould material membrane array after will handling through the 3rd step carry out first step thermal treatment, make slaine in the precursor solution or the organism of containing metal element change into corresponding MOS, and sintering, perhaps make the oxidesintering in the precursor sol; Carry out the second step thermal treatment then, namely continue heating, the CNTs template is removed by abundant oxidation, obtain the gas sensor array that has the different mos sensor elements of porous network structure based on a plurality of.
2. the preparation method of MOS gas sensor array according to claim 1 is characterized in that, in the 3rd step, the dropped amount of precursor solution or colloidal sol is to be determined by the area of the resulting CNTs film of serigraphy.
3. the preparation method of MOS gas sensor array according to claim 1 is characterized in that, in the 3rd step, the dropped amount of precursor solution or colloidal sol is 0.1 μ L/mm
2-0.3 μ L/mm
2
4. the preparation method of MOS gas sensor array according to claim 1 is characterized in that, in the 3rd step, the metallic element concentration range of precursor solution or colloidal sol is 0.05mol/L-0.2mol/L.
5. the preparation method of MOS gas sensor array according to claim 1 is characterized in that, heat treatment process should be the substep heating, the holding temperature T of first step heating
1Satisfy: T
d＜T
1＜T
o, the holding temperature T of second step heating
2Satisfy: T
2＞T
o, wherein, T
dFor slaine begins to resolve into the temperature of MOS, T
oBegin the temperature of oxidation for CNTs.
6. the preparation method of MOS gas sensor array according to claim 1 is characterized in that, the dropped amount of precursor solution or colloidal sol is 0.2 μ L/mm
2
7. the preparation method of MOS gas sensor array according to claim 1 is characterized in that, presoma is Co (NO
3)
26H
2O, In (NO
3)
35H
2O, Zn (CH
3COO)
22H
2O, Cu (NO
3)
23H
2O, Fe (NO
3)
39H
2O and SnCl
45H
2O, SnO
2, WO
3And TiO
2, Ti (OC
4H
9)
4In at least two kinds.
8. the preparation method of MOS gas sensor array according to claim 1 is characterized in that, presoma solvent or spreading agent are water, ethanol or n-propanol.
9. MOS gas sensor array that utilizes the described preparation method of claim 1 to obtain.
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Cited By (5)
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| CN103641061A (en) * | 2013-12-03 | 2014-03-19 | 电子科技大学 | Micro-nano gas sensor with gas-sensitive reconstruction effect and preparation method of micro-nano gas sensor |
| CN104614492A (en) * | 2015-01-22 | 2015-05-13 | 苏州慧闻纳米科技有限公司 | High-sensitivity gas sensor device, high-sensitivity gas sensor device preparation method and toxic gas monitoring system |
| CN104931540A (en) * | 2014-03-20 | 2015-09-23 | 中国科学院大连化学物理研究所 | Gas sensor array and preparation method thereof |
| CN105445420A (en) * | 2014-09-24 | 2016-03-30 | 普因特工程有限公司 | Micro Heater and Micro Sensor and Manufacturing Methods Thereof |
| CN113504272A (en) * | 2020-07-21 | 2021-10-15 | 艾感科技(广东)有限公司 | Gas sensor for differential detection and gas detection method thereof |
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| CN103641061A (en) * | 2013-12-03 | 2014-03-19 | 电子科技大学 | Micro-nano gas sensor with gas-sensitive reconstruction effect and preparation method of micro-nano gas sensor |
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| CN105445420B (en) * | 2014-09-24 | 2019-12-06 | 普因特工程有限公司 | Micro-heater and micro-sensor and method of manufacturing the same |
| CN104614492A (en) * | 2015-01-22 | 2015-05-13 | 苏州慧闻纳米科技有限公司 | High-sensitivity gas sensor device, high-sensitivity gas sensor device preparation method and toxic gas monitoring system |
| CN104614492B (en) * | 2015-01-22 | 2016-07-06 | 苏州慧闻纳米科技有限公司 | High sensitivity gas sensing device, preparation method and toxic gas monitoring system |
| CN113504272A (en) * | 2020-07-21 | 2021-10-15 | 艾感科技(广东)有限公司 | Gas sensor for differential detection and gas detection method thereof |
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