CN103289696B - Titanium doped lanthanum gallate luminescent material as well as preparation method and application thereof - Google Patents
Titanium doped lanthanum gallate luminescent material as well as preparation method and application thereof Download PDFInfo
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- CN103289696B CN103289696B CN201210047864.XA CN201210047864A CN103289696B CN 103289696 B CN103289696 B CN 103289696B CN 201210047864 A CN201210047864 A CN 201210047864A CN 103289696 B CN103289696 B CN 103289696B
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- lanthanum gallate
- doped lanthanum
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Abstract
The invention discloses a titanium doped lanthanum gallate luminescent material of which the chemical formula is La1-xGaO3:xTi<4+>, wherein x is greater than or equal to 0.03 and less than or equal to 0.12. The electroluminescent spectrum (EL) of a luminescent film prepared from the titanium doped lanthanum gallate luminescent material has intensive yellow light luminescence peaks in a 530nm wavelength area, so that the luminescent film can be applied to film electroluminescent displays. The invention further provides a preparation method and an application of the titanium doped lanthanum gallate luminescent material.
Description
[technical field]
The present invention relates to a kind of titanium doped lanthanum gallate luminescent material, its preparation method, titanium doped lanthanum gallate light-emitting film, its preparation method, membrane electro luminescent device and preparation method thereof.
[background technology]
Thin-film electroluminescent displays (TFELD), due to its active illuminating, total solids, the advantage such as shock-resistant, reaction is fast, visual angle is large, Applicable temperature is wide, operation is simple, has caused and paid close attention to widely, and development rapidly.At present, research colour and extremely panchromatic TFELD, the material of exploitation multiband luminescence is the developing direction of this problem.But, can be applicable to the titanium doped lanthanum gallate luminescent material of thin-film electroluminescent displays, have not yet to see report.
[summary of the invention]
Based on this, be necessary to provide a kind of titanium doped lanthanum gallate luminescent material, its preparation method, titanium doped lanthanum gallate light-emitting film, its preparation method, the membrane electro luminescent device using this titanium doped lanthanum gallate luminescent material and preparation method thereof that can be applicable to membrane electro luminescent device.
A kind of titanium doped lanthanum gallate luminescent material, its chemical formula is La
1-xgaO
3: xTi
4+, wherein LaGaO
3be matrix, Ti element is active element, 0.03≤x≤0.12.
A preparation method for titanium doped lanthanum gallate luminescent material, comprises the following steps:
According to La
1-xgaO
3: xTi
4+the stoichiometric ratio of each element takes La
2o
3, Ga
2o
3and TiO
2powder also mixes, wherein 0.03≤x≤0.12; And
Namely the powder mixed sinter 0.5 hour ~ 5 hours to be obtained chemical formula being La at 900 DEG C ~ 1300 DEG C
1-xgaO
3: xTi
4+titanium doped lanthanum gallate luminescent material.
A kind of titanium doped lanthanum gallate light-emitting film, the chemical general formula of the material of this titanium doped lanthanum gallate light-emitting film is La
1-xgaO
3: xTi
4+, wherein, LaGaO
3be matrix, Ti element is active element, 0.03≤x≤0.12.
A preparation method for titanium doped lanthanum gallate light-emitting film, comprises the following steps:
According to La
1-xgaO
3: xTi
4+the stoichiometric ratio of each element takes La
2o
3, Ga
2o
3and TiO
2powder also to mix at 900 DEG C ~ 1300 DEG C sintering and makes target, wherein 0.03≤x≤0.12 in 0.5 hour ~ 5 hours;
Described target and substrate are loaded the vacuum cavity of magnetic-controlled sputtering coating equipment, and the vacuum tightness of vacuum cavity is set to 1.0 × 10
-3pa ~ 1.0 × 10
-5pa; And
Adjustment magnetron sputtering plating processing parameter is: base target spacing is 50mm ~ 100mm, magnetron sputtering operating pressure 0.2Pa ~ 4.5Pa, the flow of working gas is 15sccm ~ 30sccm, and underlayer temperature is 250 DEG C ~ 750 DEG C, then be filmed, obtaining chemical formula is La
1-xgaO
3: xTi
4+titanium doped lanthanum gallate light-emitting film.
In a preferred embodiment, also step is comprised: by described titanium doped lanthanum gallate light-emitting film vacuum annealing process 1h ~ 3h at 500 DEG C ~ 800 DEG C.
In a preferred embodiment, the vacuum tightness of described vacuum cavity is 5.0 × 10
-4pa, base target spacing is 75mm, and magnetron sputtering operating pressure is 2Pa, and working gas is argon gas, and the flow of working gas is 25sccm, and underlayer temperature is 600 DEG C.
A kind of membrane electro luminescent device, this membrane electro luminescent device comprises the substrate, anode layer, luminescent layer and the cathode layer that stack gradually, and the material of described luminescent layer is titanium doped lanthanum gallate luminescent material, and the chemical formula of this titanium doped lanthanum gallate luminescent material is La
1-xgaO
3: xTi
4+, wherein 0.03≤x≤0.12.
A preparation method for membrane electro luminescent device, comprises the following steps:
The substrate with anode is provided;
Described anode forms luminescent layer, and the material of described luminescent layer is titanium doped lanthanum gallate luminescent material, and the chemical formula of this titanium doped lanthanum gallate luminescent material is La
1-xgaO
3: xTi
4+, wherein 0.03≤x≤0.12;
Form negative electrode on the light-emitting layer.
In a preferred embodiment, the preparation of described luminescent layer comprises the following steps:
According to La
1-xgaO
3: xTi
4+the stoichiometric ratio of each element takes La
2o
3, Ga
2o
3and TiO
2powder also to mix at 900 DEG C ~ 1300 DEG C sintering and makes target, wherein 0.03≤x≤0.12 in 0.5 hour ~ 5 hours;
Described target and described substrate are loaded the vacuum cavity of magnetic-controlled sputtering coating equipment, and the vacuum tightness of vacuum cavity is set to 1.0 × 10
-3pa ~ 1.0 × 10
-5pa;
Adjustment magnetron sputtering plating processing parameter is: base target spacing is 50mm ~ 100mm, magnetron sputtering operating pressure 0.2Pa ~ 4.5Pa, the flow of working gas is 15sccm ~ 30sccm, and underlayer temperature is 250 DEG C ~ 750 DEG C, then be filmed, described anode forms luminescent layer.
In a preferred embodiment, the preparation of described luminescent layer also comprises step: by described luminescent layer vacuum annealing process 1h ~ 3h at 500 DEG C ~ 800 DEG C.
Above-mentioned titanium doped lanthanum gallate luminescent material (La
1-xgaO
3: xTi
4+) in the electroluminescent spectrum (EL) of light-emitting film made, have very strong Yellow light emitting peak in 530nm wavelength zone, can be applied in thin-film electroluminescent displays.
[accompanying drawing explanation]
Fig. 1 is the structural representation of the membrane electro luminescent device of an embodiment;
Fig. 2 is the electroluminescent spectrogram of titanium doped lanthanum gallate light-emitting film prepared by embodiment 1;
Fig. 3 is the XRD figure of titanium doped lanthanum gallate light-emitting film prepared by embodiment 1.
[embodiment]
Below in conjunction with the drawings and specific embodiments, titanium doped lanthanum gallate luminescent material, its preparation method, titanium doped lanthanum gallate light-emitting film, its preparation method, membrane electro luminescent device and preparation method thereof are illustrated further.
The titanium doped lanthanum gallate luminescent material of one embodiment, its chemical formula is La
1-xgaO
3: xTi
4+, wherein, LaGaO
3be matrix, Ti element is active element, 0.03≤x≤0.12.
Preferably, x is 0.1.
LaGaO in this titanium doped lanthanum gallate luminescent material
3be matrix, Ti element is active element.In the electroluminescent spectrum (EL) of the light-emitting film that this titanium doped lanthanum gallate luminescent material is made, there is very strong Yellow light emitting peak in 530nm wavelength zone, can be applied in thin-film electroluminescent displays.
The preparation method of above-mentioned titanium doped lanthanum gallate luminescent material, comprises the following steps:
Step S11, according to La
1-xgaO
3: xTi
4+the stoichiometric ratio of each element takes La
2o
3, Ga
2o
3and TiO
2powder, wherein 0.03≤x≤0.12.
In this step, preferably, x is 0.1, La
2o
3, Ga
2o
3and TiO
2the mol ratio of powder is 0.9: 1: 0.2.
Step S12, by mixing equal powder sinter 0.5 hour ~ 5 hours can obtain chemical formula being La at 900 DEG C ~ 1300 DEG C
1-xgaO
3: xTi
4+titanium doped lanthanum gallate luminescent material.
In this step, preferably at 1250 DEG C, sinter 3 hours.
The titanium doped lanthanum gallate light-emitting film of one embodiment, the chemical general formula of the material of this titanium doped lanthanum gallate light-emitting film is La
1-xgaO
3: xTi
4+, wherein, LaGaO
3be matrix, Ti element is active element, 0.03≤x≤0.12.
Preferably, x is 0.1, La
2o
3, Ga
2o
3and TiO
2the mol ratio of powder is 0.9: 1: 0.2.
The preparation method of above-mentioned titanium doped lanthanum gallate light-emitting film, comprises the following steps:
Step S21, by La
1-xgaO
3: xTi
4+the stoichiometric ratio of each element takes La
2o
3, Ga
2o
3and TiO
2powder also to mix at 900 DEG C ~ 1300 DEG C sintering and makes target, wherein 0.03≤x≤0.12 in 0.5 hour ~ 5 hours.
In this step, preferably, x is 0.1, La
2o
3, Ga
2o
3and TiO
2the mol ratio of powder is 0.9: 1: 0.2, and at 1250 DEG C, sinter 3 hours become diameter to be 50mm, thickness is the ceramic target of 2mm.
Step S22, the target that obtains in step S21 and substrate are loaded the vacuum cavity of magnetic-controlled sputtering coating equipment, and the vacuum tightness of vacuum cavity is set to 1.0 × 10
-3pa ~ 1.0 × 10
-5pa.
In this step, preferably, vacuum tightness is 5 × 10
-4pa.
Step S23, adjustment magnetron sputtering plating processing parameter are: base target spacing is 50mm ~ 100mm, magnetron sputtering operating pressure 0.2Pa ~ 4.5Pa, and the flow of working gas is 15sccm ~ 30sccm, and underlayer temperature is 250 DEG C ~ 750 DEG C; Then be filmed, obtaining chemical formula is La
1-xgaO
3: xTi
4+titanium doped lanthanum gallate light-emitting film.
In this step, preferred base target spacing is 75mm, magnetron sputtering operating pressure 2Pa, and working gas is argon gas, and the flow of working gas is 25sccm, and underlayer temperature is 600 DEG C.
Step S24, by titanium doped lanthanum gallate light-emitting film vacuum annealing process 1h ~ 3h at 500 DEG C ~ 800 DEG C.
In this step, preferably, film sample vacuum annealing process 2h at 700 DEG C.
Refer to Fig. 1, the membrane electro luminescent device 100 of an embodiment, this membrane electro luminescent device 100 comprises the substrate 1, anode 2, luminescent layer 3 and the negative electrode 4 that stack gradually.
Substrate 1 is glass substrate.Anode 2 is for being formed at the tin indium oxide (ITO) in glass substrate.The material of luminescent layer 3 is titanium doped lanthanum gallate luminescent material, and the chemical formula of this titanium doped lanthanum gallate luminescent material is La
1-xgaO
3: xTi
4+, wherein 0.03≤x≤0.12.The material of negative electrode 4 is silver (Ag).
The preparation method of above-mentioned membrane electro luminescent device, comprises the following steps:
Step S31, provide the substrate 1 with anode 2.
In present embodiment, substrate 1 is glass substrate, and anode 2 is for being formed at the tin indium oxide (ITO) in glass substrate.There is the substrate 1 priority acetone of anode 2, dehydrated alcohol and deionized water ultrasonic cleaning and carry out oxygen plasma treatment with to it.
Step S32, on anode 2, form luminescent layer 3, the material of luminescent layer 3 is titanium doped lanthanum gallate luminescent material, and the chemical formula of this titanium doped lanthanum gallate luminescent material is La
1-xgaO
3: xTi
4+, wherein 0.03≤x≤0.12.
In present embodiment, luminescent layer 3 is obtained by following steps:
First, by La
1-xgaO
3: xTi
4+the stoichiometric ratio of each element takes La
2o
3, Ga
2o
3and TiO
2powder also to mix at 900 DEG C ~ 1300 DEG C sintering and makes target, wherein 0.03≤x≤0.12 in 0.5 hour ~ 5 hours.
In this step, preferably, x is 0.1, and at 1250 DEG C, sinter 3 hours become diameter to be 50mm, thickness is the ceramic target of 2mm.
Secondly, target and substrate are loaded the vacuum cavity of magnetic-controlled sputtering coating equipment, and the vacuum tightness of vacuum cavity is set to 1.0 × 10
-3pa ~ 1.0 × 10
-5pa.
In this step, preferably, vacuum tightness is 5 × 10
-4pa.
Then, adjusting magnetron sputtering plating processing parameter is: base target spacing is 50mm ~ 100mm, magnetron sputtering operating pressure 0.2Pa ~ 4.5Pa, the flow of working gas is 15sccm ~ 30sccm, underlayer temperature is 250 DEG C ~ 750 DEG C, is then filmed, and anode 2 is formed luminescent layer 3.
In this step, preferred base target spacing is 75mm, magnetron sputtering operating pressure 2Pa, and working gas is argon gas, and the flow of working gas is 25sccm, and underlayer temperature is 500 DEG C.
Finally, by luminescent layer 3 vacuum annealing process 1h ~ 3h at 500 DEG C ~ 800 DEG C.
In this step, preferably, film sample vacuum annealing process 2h at 700 DEG C.
Step S33, on luminescent layer 3, form negative electrode 4.
In present embodiment, the material of negative electrode 4 is silver (Ag), is formed by evaporation.
Be specific embodiment below.
Embodiment 1
Select purity be 99.99% powder, by the La of 0.9mol
2o
3, the Ga of 1mol
2o
3, and the TiO of 0.2mol
2, after Homogeneous phase mixing, at 1250 DEG C, sinter diameter into is 50mm, and thickness is the ceramic target of 2mm, and is loaded in vacuum cavity by target.Then, successively use the glass substrate of acetone, dehydrated alcohol and deionized water ultrasonic cleaning band ITO, and carry out oxygen plasma treatment with to it, put into vacuum cavity.The distance of target and substrate is set as 75mm.With mechanical pump and molecular pump, the vacuum tightness of cavity is extracted into 7.0 × 10
-4pa, working gas flow is 25sccm, and pressure is adjusted to 2.0Pa, and underlayer temperature is 600 DEG C.The sample obtained is annealed 2h in 0.01Pa vacuum oven, and annealing temperature is 700 DEG C.Obtaining chemical formula is La
0.9gaO
3: 0.1Ti
4+film, then evaporation one deck Ag on light-emitting film, as negative electrode.
The chemical general formula of the titanium doped lanthanum gallate light-emitting film obtained in the present embodiment is La
0.9gaO
3: 0.1Ti
4+, wherein LaGaO
3be matrix, Ti element is active element.
Refer to Fig. 2, Figure 2 shows that the electroluminescence spectrum (EL) of the titanium doped lanthanum gallate light-emitting film obtained.As seen from Figure 2, in electroluminescence spectrum, have very strong Yellow light emitting peak in 530nm wavelength zone, excitation wavelength is 325nm, can be applied in thin-film electroluminescent displays.
Refer to Fig. 3, Fig. 3 is the XRD curve of titanium doped lanthanum gallate light-emitting film prepared by embodiment 1, test comparison standard P DF card.As can be seen from Figure 3, major part is the lanthanum gallate of zirconium barium phosphate, does not occur the diffraction peak of doped element and other impurity, proves that titanium is the lattice entering lanthanum gallate, does not occur phase-splitting.
Embodiment 2
Select purity be 99.99% powder, by the La of 0.88mol
2o
3, the Ga of 1mol
2o
3, and the TiO of 0.24mol
2, after Homogeneous phase mixing, at 900 DEG C, sinter diameter into is 50mm, and thickness is the ceramic target of 2mm, and is loaded in vacuum cavity by target.Then, successively use the glass substrate of acetone, dehydrated alcohol and deionized water ultrasonic cleaning band ITO, and carry out oxygen plasma treatment with to it, put into vacuum cavity.The distance of target and substrate is set as 50mm.With mechanical pump and molecular pump, the vacuum tightness of cavity is extracted into 1.0 × 10
-5pa, working gas flow is 30sccm, and pressure is adjusted to 0.2Pa, and underlayer temperature is 250 DEG C.The sample obtained is annealed 1h in 0.01Pa vacuum oven, and annealing temperature is 800 DEG C.Obtaining chemical formula is La
0.88gaO
3: 0.12Ti
4+film, then evaporation one deck Ag on light-emitting film, as negative electrode.
Embodiment 3
Select purity be 99.99% powder, by the La of 0.97mol
2o
3, the Ga of 1mol
2o
3, and the TiO of 0.06mol
2, after Homogeneous phase mixing, at 1300 DEG C, sinter diameter into is 50mm, and thickness is the ceramic target of 2mm, and is loaded in vacuum cavity by target.Then, successively use the glass substrate of acetone, dehydrated alcohol and deionized water ultrasonic cleaning band ITO, and carry out oxygen plasma treatment with to it, put into vacuum cavity.The distance of target and substrate is set as 100mm.With mechanical pump and molecular pump, the vacuum tightness of cavity is extracted into 1.0 × 10
-3pa, working gas flow is 15sccm, and pressure is adjusted to 4.5Pa, and underlayer temperature is 750 DEG C.The sample obtained is annealed 3h in 0.01Pa vacuum oven, and annealing temperature is 500 DEG C.Obtaining chemical formula is La
0.97gaO
3: 0.03Ti
4+film, then evaporation one deck Ag on light-emitting film, as negative electrode.
Embodiment 4
Select purity be 99.99% powder, by the La of 0.92mol
2o
3, the Ga of 1mol
2o
3, and the TiO of 0.16mol
2, after Homogeneous phase mixing, at 1100 DEG C, sinter diameter into is 50mm, and thickness is the ceramic target of 2mm, and is loaded in vacuum cavity by target.Then, successively use the glass substrate of acetone, dehydrated alcohol and deionized water ultrasonic cleaning band ITO, and carry out oxygen plasma treatment with to it, put into vacuum cavity.The distance of target and substrate is set as 90mm.With mechanical pump and molecular pump, the vacuum tightness of cavity is extracted into 8.0 × 10
-4pa, working gas flow is 18sccm, and pressure is adjusted to 4.0Pa, and underlayer temperature is 300 DEG C.The sample obtained is annealed 1.5h in 0.01Pa vacuum oven, and annealing temperature is 550 DEG C.Obtaining chemical formula is La
0.92gaO
3: 0.08Ti
4+film, then evaporation one deck Ag on light-emitting film, as negative electrode.
Embodiment 5
Select purity be 99.99% powder, by the La of 0.95mol
2o
3, the Ga of 1mol
2o
3, and the TiO of 0.1mol
2, after Homogeneous phase mixing, at 1000 DEG C, sinter diameter into is 50mm, and thickness is the ceramic target of 2mm, and is loaded in vacuum cavity by target.Then, successively use the glass substrate of acetone, dehydrated alcohol and deionized water ultrasonic cleaning band ITO, and carry out oxygen plasma treatment with to it, put into vacuum cavity.The distance of target and substrate is set as 60mm.With mechanical pump and molecular pump, the vacuum tightness of cavity is extracted into 3.0 × 10
-3pa, working gas flow is 25sccm, and pressure is adjusted to 1.5Pa, and underlayer temperature is 750 DEG C.The sample obtained is annealed 3h in 0.01Pa vacuum oven, and annealing temperature is 600 DEG C.Obtaining chemical formula is La
0.95gaO
3: 0.05Ti
4+film, then evaporation one deck Ag on light-emitting film, as negative electrode.
The above embodiment only have expressed several embodiment of the present invention, and it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be as the criterion with claims.
Claims (5)
1. a preparation method for titanium doped lanthanum gallate light-emitting film, is characterized in that, comprise the following steps:
According to La
1-xgaO
3: xTi
4+the stoichiometric ratio of each element takes La
2o
3, Ga
2o
3and TiO
2powder also to mix at 900 DEG C ~ 1300 DEG C sintering and makes target, wherein 0.03≤x≤0.12 in 0.5 hour ~ 5 hours;
Described target and substrate are loaded the vacuum cavity of magnetic-controlled sputtering coating equipment, and the vacuum tightness of vacuum cavity is set to 1.0 × 10
-3pa ~ 1.0 × 10
-5pa; And
Adjustment magnetron sputtering plating processing parameter is: base target spacing is 50mm ~ 100mm, magnetron sputtering operating pressure 0.2Pa ~ 4.5Pa, the flow of working gas is 15sccm ~ 30sccm, and underlayer temperature is 250 DEG C ~ 750 DEG C, then be filmed, obtaining chemical formula is La
1-xgaO
3: xTi
4+titanium doped lanthanum gallate light-emitting film.
2. the preparation method of titanium doped lanthanum gallate light-emitting film according to claim 1, is characterized in that, also comprise step: by described titanium doped lanthanum gallate light-emitting film vacuum annealing process 1h ~ 3h at 500 DEG C ~ 800 DEG C.
3. the preparation method of titanium doped lanthanum gallate light-emitting film according to claim 1, is characterized in that, the vacuum tightness of described vacuum cavity is 5.0 × 10
-4pa, base target spacing is 75mm, and magnetron sputtering operating pressure is 2Pa, and working gas is argon gas, and the flow of working gas is 25sccm, and underlayer temperature is 600 DEG C.
4. a preparation method for membrane electro luminescent device, is characterized in that, comprises the following steps:
The substrate with anode is provided;
Described anode forms luminescent layer, and the material of described luminescent layer is titanium doped lanthanum gallate luminescent material, and the chemical formula of this titanium doped lanthanum gallate luminescent material is La
1-xgaO
3: xTi
4+, wherein 0.03≤x≤0.12;
Form negative electrode on the light-emitting layer,
The preparation of described luminescent layer comprises the following steps:
According to La
1-xgaO
3: xTi
4+the stoichiometric ratio of each element takes La
2o
3, Ga
2o
3and TiO
2powder also to mix at 900 DEG C ~ 1300 DEG C sintering and makes target, wherein 0.03≤x≤0.12 in 0.5 hour ~ 5 hours;
Described target and described substrate are loaded the vacuum cavity of magnetic-controlled sputtering coating equipment, and the vacuum tightness of vacuum cavity is set to 1.0 × 10
-3pa ~ 1.0 × 10
-5pa;
Adjustment magnetron sputtering plating processing parameter is: base target spacing is 50mm ~ 100mm, magnetron sputtering operating pressure 0.2Pa ~ 4.5Pa, the flow of working gas is 15sccm ~ 30sccm, and underlayer temperature is 250 DEG C ~ 750 DEG C, then be filmed, described anode forms luminescent layer.
5. the preparation method of membrane electro luminescent device according to claim 4, is characterized in that, the preparation of described luminescent layer also comprises step: by described luminescent layer vacuum annealing process 1h ~ 3h at 500 DEG C ~ 800 DEG C.
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| CN201210047864.XA CN103289696B (en) | 2012-02-28 | 2012-02-28 | Titanium doped lanthanum gallate luminescent material as well as preparation method and application thereof |
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Citations (3)
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|---|---|---|---|---|
| CN101368258A (en) * | 2008-09-12 | 2009-02-18 | 江苏大学 | Preparation method of negative thermal expansion material ZrW2O8 film |
| WO2011130926A1 (en) * | 2010-04-23 | 2011-10-27 | 海洋王照明科技股份有限公司 | Rare earth ion doped lanthanum gallate luminous material containing metal particles and preparation method thereof |
| CN102268254A (en) * | 2010-06-02 | 2011-12-07 | 海洋王照明科技股份有限公司 | Yttria light-emitting element and preparation method thereof |
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2012
- 2012-02-28 CN CN201210047864.XA patent/CN103289696B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101368258A (en) * | 2008-09-12 | 2009-02-18 | 江苏大学 | Preparation method of negative thermal expansion material ZrW2O8 film |
| WO2011130926A1 (en) * | 2010-04-23 | 2011-10-27 | 海洋王照明科技股份有限公司 | Rare earth ion doped lanthanum gallate luminous material containing metal particles and preparation method thereof |
| CN102268254A (en) * | 2010-06-02 | 2011-12-07 | 海洋王照明科技股份有限公司 | Yttria light-emitting element and preparation method thereof |
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