CN104342158A - Europium-erbium double-doped zinc selenide luminescent material, and preparation method and application thereof - Google Patents
Europium-erbium double-doped zinc selenide luminescent material, and preparation method and application thereof Download PDFInfo
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- CN104342158A CN104342158A CN201310336925.9A CN201310336925A CN104342158A CN 104342158 A CN104342158 A CN 104342158A CN 201310336925 A CN201310336925 A CN 201310336925A CN 104342158 A CN104342158 A CN 104342158A
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Abstract
The invention provides an europium-erbium double-doped zinc selenide luminescent material with a chemical formula of ZnSe:xEu<3+>,yEr<3+>, wherein x is 0.01-0.05, y is 0.01-0.06, ZnSe is a matrix, and Eu<3+> and Er<3+> ions are active elements. In an electroluminescence spectrum (EL) of a luminescent thin film prepared with the europium-erbium double-doped zinc selenide luminescent material, strong luminescence peaks can be found at 490nm and 580nm wavelength zones. The material can be used in a thin-film electroluminescent display device. The invention also provides a preparation method and an application of the europium-erbium double-doped zinc selenide luminescent material.
Description
[technical field]
The present invention relates to a kind of europium erbium codope zinc selenide luminescent material, its preparation method, europium erbium codope zinc selenide light-emitting film, its preparation method, membrane electro luminescent device and preparation method thereof.
[background technology]
Thin-film electroluminescent displays (TFELD), due to its active illuminating, total solids, the advantage such as shock-resistant, reaction is fast, visual angle is large, Applicable temperature is wide, operation is simple, has caused and paid close attention to widely, and development rapidly.At present, research colour and extremely panchromatic TFELD, the material of exploitation multiband luminescence is the developing direction of this problem.But, can be applicable to the europium erbium codope zinc selenide luminescent material of thin-film electroluminescent displays, have not yet to see report.
[summary of the invention]
Based on this, be necessary to provide a kind of the europium erbium codope zinc selenide luminescent material, its preparation method, europium erbium codope zinc selenide light-emitting film, its preparation method, the membrane electro luminescent device using this europium erbium codope zinc selenide luminescent material and preparation method thereof that can be applicable to membrane electro luminescent device.
A kind of europium erbium codope zinc selenide luminescent material, its chemical formula is ZnSe:xEu
3+, yEr
3+, wherein, x is 0.01 ~ 0.05, y be 0.01 ~ 0.06, ZnSe is matrix, Eu
3+and Er
3+ion is active element.
A preparation method for europium erbium codope zinc selenide luminescent material, comprises the following steps:
According to ZnSe:xEu
3+, yEr
3+the stoichiometric ratio of each element takes ZnSe, Eu
2se
3and Er
2se
3powder also mixes, and wherein, x is 0.01 ~ 0.05, y is 0.01 ~ 0.06; And
Namely the powder mixed sinter 0.5 hour ~ 5 hours to be obtained chemical formula being ZnSe:xEu at 900 DEG C ~ 1300 DEG C
3+, yEr
3+europium erbium codope zinc selenide luminescent material.
A kind of europium erbium codope zinc selenide light-emitting film, the chemical general formula of the material of this europium erbium codope zinc selenide light-emitting film is ZnSe:xEu
3+, yEr
3+, wherein, x is 0.01 ~ 0.05, y be 0.01 ~ 0.06, ZnSe is matrix, Eu
3+and Er
3+ion is active element.
A preparation method for europium erbium codope zinc selenide light-emitting film, comprises the following steps:
According to ZnSe:xEu
3+, yEr
3+the stoichiometric ratio of each element takes ZnSe, Eu
2se
3and Er
2se
3powder also to mix at 900 DEG C ~ 1300 DEG C sintering and makes target in 0.5 hour ~ 5 hours, and wherein, x is 0.01 ~ 0.05, y is 0.01 ~ 0.06;
Described target and substrate are loaded the vacuum cavity of magnetic-controlled sputtering coating equipment, and the vacuum tightness of vacuum cavity is set to 1.0 × 10
-3pa ~ 1.0 × 10
-5pa; And
Adjustment magnetron sputtering plating processing parameter is: base target spacing is 45mm ~ 95mm, magnetron sputtering operating pressure 0.5Pa ~ 5Pa, the flow of working gas is 10sccm ~ 40sccm, underlayer temperature is 250 DEG C ~ 750 DEG C, laser energy is 80W ~ 300W, then be filmed, obtaining chemical formula is ZnSe:xEu
3+, yEr
3+europium erbium codope zinc selenide light-emitting film, ZnSe is matrix, Eu
3+and Er
3+ion is active element.
The vacuum tightness of described vacuum cavity is 5.0 × 10
-4pa, base target spacing is 60mm, and magnetron sputtering operating pressure is 3Pa, and working gas is oxygen, and the flow of working gas is 20sccm, and underlayer temperature is 500 DEG C, and laser energy is 150W.
A kind of membrane electro luminescent device, this membrane electro luminescent device comprises the substrate, anode layer, luminescent layer and the cathode layer that stack gradually, the material of described luminescent layer is europium erbium codope zinc selenide luminescent material, and the chemical formula of this europium erbium codope zinc selenide luminescent material is ZnSe:xEu
3+, yEr
3+, wherein, x is 0.01 ~ 0.05, y be 0.01 ~ 0.06, ZnSe is matrix, Eu
3+and Er
3+ion is active element.
A preparation method for membrane electro luminescent device, comprises the following steps:
The substrate with anode is provided;
Described anode forms luminescent layer, and the material of described luminescent layer is europium erbium codope zinc selenide luminescent material, and the chemical formula of this europium erbium codope zinc selenide luminescent material is ZnSe:xEu
3+, yEr
3+, wherein, x is 0.01 ~ 0.05, y be 0.01 ~ 0.06, ZnSe is matrix, Eu
3+and Er
3+ion is active element;
Form negative electrode on the light-emitting layer.
The preparation of described luminescent layer comprises the following steps:
According to ZnSe:xEu
3+, yEr
3+the stoichiometric ratio of each element takes ZnSe, Eu
2se
3and Er
2se
3powder also to mix at 900 DEG C ~ 1300 DEG C sintering and makes target in 0.5 hour ~ 5 hours, and wherein, x is 0.01 ~ 0.05, y is 0.01 ~ 0.06;
Described target and described substrate are loaded the vacuum cavity of magnetic-controlled sputtering coating equipment, and the vacuum tightness of vacuum cavity is set to 1.0 × 10
-3pa ~ 1.0 × 10
-5pa;
Adjustment magnetron sputtering plating processing parameter is: base target spacing is 45mm ~ 95mm, magnetron sputtering operating pressure 0.5Pa ~ 5Pa, the flow of working gas is 10sccm ~ 340sccm, underlayer temperature is 250 DEG C ~ 750 DEG C, laser energy is 80W ~ 300W, then be filmed, obtaining chemical formula is ZnSe:xEu
3+, yEr
3+europium erbium codope zinc selenide light-emitting film, described anode forms luminescent layer.
Above-mentioned europium erbium codope zinc selenide luminescent material (ZnSe:xEu
3+, yEr
3+) in the electroluminescent spectrum (EL) of light-emitting film made, have very strong glow peak in 490nm and 580nm wavelength zone, can be applied in thin-film electroluminescent displays.
[accompanying drawing explanation]
Fig. 1 is the structural representation of the membrane electro luminescent device of an embodiment;
Fig. 2 is the electroluminescent spectrogram of europium erbium codope zinc selenide light-emitting film prepared by embodiment 1;
Fig. 3 is the XRD figure of europium erbium codope zinc selenide light-emitting film prepared by embodiment 1;
Fig. 4 is the voltage of membrane electro luminescent device prepared of embodiment 1 and current density and the graph of relation between voltage and brightness.
[embodiment]
Below in conjunction with the drawings and specific embodiments, europium erbium codope zinc selenide luminescent material, its preparation method, europium erbium codope zinc selenide light-emitting film, its preparation method, membrane electro luminescent device and preparation method thereof are illustrated further.
The europium erbium codope zinc selenide luminescent material of one embodiment, its chemical formula is ZnSe:xEu
3+, yEr
3+, wherein, x is 0.01 ~ 0.05, y be 0.01 ~ 0.06, ZnSe is matrix, Eu
3+and Er
3+ion is active element.
Preferably, x is 0.02, y is 0.03.
In this europium erbium codope zinc selenide luminescent material, ZnSe is matrix, Eu
3+and Er
3+ion is active element.In the electroluminescent spectrum (EL) of the light-emitting film that this europium erbium codope zinc selenide luminescent material is made, there is very strong glow peak in 490nm and 580nm wavelength zone, can be applied in thin-film electroluminescent displays.
The preparation method of above-mentioned europium erbium codope zinc selenide luminescent material, comprises the following steps:
Step S11, according to ZnSe:xEu
3+, yEr
3+the stoichiometric ratio of each element takes ZnSe, Eu
2se
3and Er
2se
3powder, wherein, x is 0.01 ~ 0.05, y is 0.01 ~ 0.06.
In this step, preferably, x is 0.02, y is 0.03.
Step S12, the equal powder of mixing is sintered 0.5 hour ~ 5 hours and can obtain europium erbium codope zinc selenide luminescent material at 900 DEG C ~ 1300 DEG C, its chemical formula is ZnSe:xEu
3+, yEr
3+, x is 0.01 ~ 0.05, y is 0.01 ~ 0.06.
In this step, preferably at 1250 DEG C, sinter 3 hours.
The europium erbium codope zinc selenide light-emitting film of one embodiment, the chemical general formula of the material of this europium erbium codope zinc selenide light-emitting film is ZnSe:xEu
3+, yEr
3+europium erbium codope zinc selenide luminescent material, wherein, x is 0.01 ~ 0.05, y is 0.01 ~ 0.06.
Preferably, x is 0.02, y is 0.03.
The preparation method of above-mentioned europium erbium codope zinc selenide light-emitting film, comprises the following steps:
Step S21, by ZnSe:xEu
3+, yEr
3+the stoichiometric ratio of each element takes ZnSe, Eu
2se
3and Er
2se
3powder also to mix at 900 DEG C ~ 1300 DEG C sintering and makes target in 0.5 hour ~ 5 hours, and wherein, x is 0.01 ~ 0.05, y is 0.01 ~ 0.06.
In this step, preferably, x is 0.02, y is 0.03, and at 1250 DEG C, sinter 3 hours become diameter to be 50mm, thickness is the ceramic target of 2mm.
Step S22, the target that obtains in step S21 and substrate are loaded the vacuum cavity of magnetic-controlled sputtering coating equipment, and the vacuum tightness of vacuum cavity is set to 1.0 × 10
-3pa ~ 1.0 × 10
-5pa.
In this step, preferably, vacuum tightness is 5 × 10
-4pa.
Step S23, adjustment magnetron sputtering plating processing parameter are: base target spacing is 45mm ~ 95mm, magnetron sputtering operating pressure 0.5Pa ~ 5Pa, and the flow of working gas is 10sccm ~ 40sccm, and underlayer temperature is 250 DEG C ~ 750 DEG C; Laser energy is 80W ~ 300W, is then filmed, and obtaining chemical formula is ZnSe:xEu
3+, yEr
3+europium erbium codope zinc selenide light-emitting film, x is 0.01 ~ 0.05, y be 0.01 ~ 0.06, ZnSe is matrix, Eu
3+and Er
3+ion is active element.
In this step, preferred base target spacing is 60mm, magnetron sputtering operating pressure 3Pa, and working gas is oxygen, and the flow of working gas is 20sccm, and underlayer temperature is 500 DEG C, and laser energy is 150W.
Refer to Fig. 1, the membrane electro luminescent device 100 of an embodiment, this membrane electro luminescent device 100 comprises the substrate 1, anode 2, luminescent layer 3 and the negative electrode 4 that stack gradually.
Substrate 1 is glass substrate.Anode 2 is for being formed at the tin indium oxide (ITO) in glass substrate.The material of luminescent layer 3 is europium erbium codope zinc selenide luminescent material, and the chemical formula of this europium erbium codope zinc selenide luminescent material is ZnSe:xEu
3+, yEr
3+, wherein, x is 0.01 ~ 0.05, y be 0.01 ~ 0.06, ZnSe is matrix, Eu
3+and Er
3+ion is active element.The material of negative electrode 4 is silver (Ag).
The preparation method of above-mentioned membrane electro luminescent device, comprises the following steps:
Step S31, provide the substrate 1 with anode 2.
In present embodiment, substrate 1 is glass substrate, and anode 2 is for being formed at the tin indium oxide (ITO) in glass substrate.There is the substrate 1 priority acetone of anode 2, dehydrated alcohol and deionized water ultrasonic cleaning and carry out oxygen plasma treatment with to it.
Step S32, on anode 2, form luminescent layer 3, the material of luminescent layer 3 is europium erbium codope zinc selenide luminescent material, and the chemical formula of this europium erbium codope zinc selenide luminescent material is ZnSe:xEu
3+, yEr
3+, wherein, x is 0.01 ~ 0.05, y be 0.01 ~ 0.06, ZnSe is matrix, Eu
3+and Er
3+ion is active element.
In present embodiment, luminescent layer 3 is obtained by following steps:
First, by ZnSe:xEu
3+, yEr
3+the stoichiometric ratio of each element takes ZnSe, Eu
2se
3and Er
2se
3powder also to mix at 900 DEG C ~ 1300 DEG C sintering and makes target in 0.5 hour ~ 5 hours, and wherein, x is 0.01 ~ 0.05, y is 0.01 ~ 0.06.
In this step, preferably, x is 0.03, and at 1250 DEG C, sinter 3 hours become diameter to be 50mm, thickness is the ceramic target of 2mm.
Secondly, target and substrate are loaded the vacuum cavity of magnetic-controlled sputtering coating equipment, and the vacuum tightness of vacuum cavity is set to 1.0 × 10
-3pa ~ 1.0 × 10
-5pa.
In this step, preferably, vacuum tightness is 5 × 10
-4pa.
Then, adjustment magnetron sputtering plating processing parameter is: base target spacing is 45mm ~ 95mm, magnetron sputtering operating pressure 0.5Pa ~ 5Pa, the flow of working gas is 10sccm ~ 40sccm, underlayer temperature is 250 DEG C ~ 750 DEG C, laser energy is 80W ~ 300W, is then filmed, and anode 2 is formed luminescent layer 3.
In this step, preferred base target spacing is 60mm, magnetron sputtering operating pressure 3Pa, and working gas is oxygen, and the flow of working gas is 20sccm, and underlayer temperature is 500 DEG C, and laser energy is 150W.
Step S33, on luminescent layer 3, form negative electrode 4.
In present embodiment, the material of negative electrode 4 is silver (Ag), is formed by evaporation.
Be specific embodiment below.
Embodiment 1
Select purity be 99.99% powder, by ZnSe, Eu
2se
3and Er
2se
3powder according to mol ratio be 0.95:0.01:0.015 after Homogeneous phase mixing, at 1250 DEG C, sinter diameter into is 50mm, and thickness is the ceramic target of 2mm, and is loaded in vacuum cavity by target.Then, successively use the glass substrate of acetone, dehydrated alcohol and deionized water ultrasonic cleaning band ITO, and carry out oxygen plasma treatment with to it, put into vacuum cavity.The distance of target and substrate is set as 60mm.With mechanical pump and molecular pump, the vacuum tightness of cavity is extracted into 5.0 × 10
-4pa, the working gas flow of oxygen is 20sccm, and pressure is adjusted to 3.0Pa, and underlayer temperature is 500 DEG C, laser energy 150W.The sample chemical formula obtained is ZnSe:0.02Eu
3+, 0.03Er
3+light-emitting film, then evaporation one deck Ag on light-emitting film, as negative electrode.
The chemical general formula of the europium erbium codope zinc selenide light-emitting film obtained in the present embodiment is ZnSe:0.02Eu
3+, 0.03Er
3+, wherein ZnSe is matrix, Eu
3+and Er
3+ion is active element.
Refer to Fig. 2, Figure 2 shows that the electroluminescence spectrum (EL) of the europium erbium codope zinc selenide light-emitting film obtained.As seen from Figure 2, in electroluminescence spectrum, there is very strong glow peak in 490nm and 580nm wavelength zone, can be applied in thin-film electroluminescent displays.
Refer to Fig. 3, Fig. 3 is the XRD curve of europium erbium codope zinc selenide light-emitting film prepared by embodiment 1, test comparison standard P DF card.As can be seen from Figure 3, can find out X-ray diffraction peak corresponding be the characteristic peak of zinc selenide, do not occur doped element and the relevant peak of impurity, illustrate that dopant ion enters the lattice of zinc selenide, sample has good crystallographic property.
Refer to Fig. 4, Fig. 4 is the voltage of membrane electro luminescent device prepared of embodiment 1 and current density and the graph of relation between voltage and brightness, curve 1 is voltage and current density relation curve, the luminescence from voltage 5.5V of this device can be found out, curve 2 is voltage and brightness relationship curve, can find out that the high-high brightness of this device is 325cd/m
2, show that device has the good characteristics of luminescence.
Embodiment 2
Select purity be 99.99% powder, by ZnSe, Eu
2se
3and Er
2se
3powder according to mol ratio be 0.98:0.005:0.005 after Homogeneous phase mixing, at 900 DEG C, sinter diameter into is 50mm, and thickness is the ceramic target of 2mm, and is loaded in vacuum cavity by target.Then, successively use the glass substrate of acetone, dehydrated alcohol and deionized water ultrasonic cleaning band ITO, and carry out oxygen plasma treatment with to it, put into vacuum cavity.The distance of target and substrate is set as 45mm.With mechanical pump and molecular pump, the vacuum tightness of cavity is extracted into 1.0 × 10
-3pa, the working gas flow of oxygen is 10sccm, and pressure is adjusted to 0.5Pa, and underlayer temperature is 250 DEG C, laser energy 80W.The chemical formula of the sample obtained is ZnSe:0.01Eu
3+, 0.01Er
3+light-emitting film, then evaporation one deck Ag on light-emitting film, as negative electrode.
Embodiment 3
Select purity be 99.99% powder, by ZnSe, Eu
2se
3and Er
2se
3powder according to mol ratio be 0.89:0.025:0.03 after Homogeneous phase mixing, at 1300 DEG C, sinter diameter into is 50mm, and thickness is the ceramic target of 2mm, and is loaded in vacuum cavity by target.Then, successively use the glass substrate of acetone, dehydrated alcohol and deionized water ultrasonic cleaning band ITO, and carry out oxygen plasma treatment with to it, put into vacuum cavity.The distance of target and substrate is set as 95mm.With mechanical pump and molecular pump, the vacuum tightness of cavity is extracted into 1.0 × 10
-5pa, the working gas flow of oxygen is 40sccm, and pressure is adjusted to 5.0Pa, and underlayer temperature is 750 DEG C, laser energy 300W.The chemical formula of the sample obtained is ZnSe:0.05Eu
3+, 0.06Er
3+light-emitting film, then evaporation one deck Ag on light-emitting film, as negative electrode.
Embodiment 4
Select purity be 99.99% powder, by ZnSe, Eu
2se
3and Er
2se
3powder according to mol ratio be 0.89:0.02:0.025 after Homogeneous phase mixing, at 1250 DEG C, sinter diameter into is 50mm, and thickness is the ceramic target of 2mm, and is loaded in vacuum cavity by target.Then, successively use the glass substrate of acetone, dehydrated alcohol and deionized water ultrasonic cleaning band ITO, and carry out oxygen plasma treatment with to it, put into vacuum cavity.The distance of target and substrate is set as 60mm.With mechanical pump and molecular pump, the vacuum tightness of cavity is extracted into 5.0 × 10
-4pa, the working gas flow of oxygen is 20sccm, and pressure is adjusted to 3.0Pa, and underlayer temperature is 500 DEG C, laser energy 150W.The chemical formula of the sample obtained is ZnSe:0.04Eu
3+, 0.05Er
3+light-emitting film, then evaporation one deck Ag on light-emitting film, as negative electrode.
Embodiment 5
Select purity be 99.99% powder, by ZnSe, Eu
2se
3and Er
2se
3powder is 0.89:0.01:0.01 according to mol ratio, and after Homogeneous phase mixing, at 900 DEG C, sinter diameter into is 50mm, and thickness is the ceramic target of 2mm, and is loaded in vacuum cavity by target.Then, successively use the glass substrate of acetone, dehydrated alcohol and deionized water ultrasonic cleaning band ITO, and carry out oxygen plasma treatment with to it, put into vacuum cavity.The distance of target and substrate is set as 45mm.With mechanical pump and molecular pump, the vacuum tightness of cavity is extracted into 1.0 × 10
-3pa, the working gas flow of oxygen is 10sccm, and pressure is adjusted to 0.5Pa, and underlayer temperature is 250 DEG C, laser energy 80W.The chemical formula of the sample obtained is ZnSe:0.02Eu
3+, 0.02Er
3light-emitting film, then evaporation one deck Ag on light-emitting film, as negative electrode.
Embodiment 6
Select purity be 99.99% powder, by ZnSe, Eu
2se
3and Er
2se
3powder according to mol ratio be 0.92:0.02:0.02 after Homogeneous phase mixing, at 1300 DEG C, sinter diameter into is 50mm, and thickness is the ceramic target of 2mm, and is loaded in vacuum cavity by target.Then, successively use the glass substrate of acetone, dehydrated alcohol and deionized water ultrasonic cleaning band ITO, and carry out oxygen plasma treatment with to it, put into vacuum cavity.The distance of target and substrate is set as 95mm.With mechanical pump and molecular pump, the vacuum tightness of cavity is extracted into 1.0 × 10
-5pa, the working gas flow of oxygen is 40sccm, and pressure is adjusted to 5.0Pa, and underlayer temperature is 750 DEG C, laser energy 300W.The chemical formula of the sample obtained is ZnSe:0.04Eu
3+, 0.04Er
3light-emitting film, then evaporation one deck Ag on light-emitting film, as negative electrode.
Embodiment 7
Select purity be 99.99% powder, by ZnSe, Eu
2se
3and Er
2se
3powder according to mol ratio be 0.94:0.025:0.005 after Homogeneous phase mixing, at 1250 DEG C, sinter diameter into is 50mm, and thickness is the ceramic target of 2mm, and is loaded in vacuum cavity by target.Then, successively use the glass substrate of acetone, dehydrated alcohol and deionized water ultrasonic cleaning band ITO, and carry out oxygen plasma treatment with to it, put into vacuum cavity.The distance of target and substrate is set as 60mm.With mechanical pump and molecular pump, the vacuum tightness of cavity is extracted into 5.0 × 10
-4pa, the working gas flow of oxygen is 20sccm, and pressure is adjusted to 3.0Pa, and underlayer temperature is 500 DEG C, laser energy 150W.The chemical general formula of the sample obtained is ZnSe:0.05Eu
3+, 0.01Er
3light-emitting film, then evaporation one deck Ag on light-emitting film, as negative electrode.
Embodiment 8
Select purity be 99.99% powder, by ZnSe, Eu
2se
3and Er
2se
3powder according to mol ratio be 0.93:0.005:0.03 after Homogeneous phase mixing, at 900 DEG C, sinter diameter into is 50mm, and thickness is the ceramic target of 2mm, and is loaded in vacuum cavity by target.Then, successively use the glass substrate of acetone, dehydrated alcohol and deionized water ultrasonic cleaning band ITO, and carry out oxygen plasma treatment with to it, put into vacuum cavity.The distance of target and substrate is set as 45mm.With mechanical pump and molecular pump, the vacuum tightness of cavity is extracted into 1.0 × 10
-3pa, the working gas flow of oxygen is 10sccm, and pressure is adjusted to 0.5Pa, and underlayer temperature is 250 DEG C, laser energy 80W.The chemical formula of the sample obtained is ZnSe:0.01Eu
3+, 0.06Er
3light-emitting film, then evaporation one deck Ag on light-emitting film, as negative electrode.
The above embodiment only have expressed several embodiment of the present invention, and it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be as the criterion with claims.
Claims (9)
1. an europium erbium codope zinc selenide luminescent material, is characterized in that: its chemical formula is ZnSe:xEu
3+, yEr
3+, wherein, x is 0.01 ~ 0.05, y be 0.01 ~ 0.06, ZnSe is matrix, Eu
3+ion and Er
3+ion is active element.
2. a preparation method for europium erbium codope zinc selenide luminescent material, is characterized in that, comprise the following steps:
According to ZnSe:xEu
3+, yEr
3+the stoichiometric ratio of each element takes ZnSe, Eu
2se
3and Er
2se
3powder also mixes, and wherein, x is 0.01 ~ 0.05, y is 0.01 ~ 0.06; And
Namely the powder mixed sinter 0.5 hour ~ 5 hours to be obtained chemical formula being ZnSe:xEu at 900 DEG C ~ 1300 DEG C
3+, yEr
3+europium erbium codope zinc selenide luminescent material.
3. an europium erbium codope zinc selenide light-emitting film, is characterized in that, the chemical general formula of the material of this europium erbium codope zinc selenide light-emitting film is ZnSe:xEu
3+, yEr
3+, wherein, x is 0.01 ~ 0.05, y be 0.01 ~ 0.06, ZnSe is matrix, Eu
3+ion and Er
3+ion is active element.
4. a preparation method for europium erbium codope zinc selenide light-emitting film, is characterized in that, comprise the following steps:
According to ZnSe:xEu
3+, yEr
3+the stoichiometric ratio of each element takes ZnSe, Eu
2se
3and Er
2se
3powder also to mix at 900 DEG C ~ 1300 DEG C sintering and makes target in 0.5 hour ~ 5 hours, and wherein, x is 0.01 ~ 0.05, y is 0.01 ~ 0.06;
Described target and substrate are loaded the vacuum cavity of magnetic-controlled sputtering coating equipment, and the vacuum tightness of vacuum cavity is set to 1.0 × 10
-3pa ~ 1.0 × 10
-5pa; And
Adjustment magnetron sputtering plating processing parameter is: base target spacing is 45mm ~ 95mm, magnetron sputtering operating pressure 0.5Pa ~ 5Pa, the flow of working gas is 10sccm ~ 40sccm, underlayer temperature is 250 DEG C ~ 750 DEG C, laser energy is 80W ~ 300W, then be filmed, obtaining chemical formula is ZnSe:xEu
3+, yEr
3+europium erbium codope zinc selenide light-emitting film, ZnSe is matrix, Eu
3+ion and Er
3+ion is active element.
5. the preparation method of europium erbium codope zinc selenide light-emitting film according to claim 4, it is characterized in that, the vacuum tightness of described vacuum cavity is 5.0 × 10
-4pa, base target spacing is 60mm, and magnetron sputtering operating pressure is 3Pa, and working gas is oxygen, and the flow of working gas is 20sccm, and underlayer temperature is 500 DEG C, and laser energy is 150W.
6. a membrane electro luminescent device, this membrane electro luminescent device comprises the substrate, anode layer, luminescent layer and the cathode layer that stack gradually, it is characterized in that, the material of described luminescent layer is europium erbium codope zinc selenide luminescent material, and the chemical formula of this europium erbium codope zinc selenide luminescent material is ZnSe:xEu
3+, yEr
3+, wherein, x is 0.01 ~ 0.05, y be 0.01 ~ 0.06, ZnSe is matrix, Eu
3+ion and Er
3+ion is active element.
7. a preparation method for membrane electro luminescent device, is characterized in that, comprises the following steps:
The substrate with anode is provided;
Described anode forms luminescent layer, and the material of described luminescent layer is europium erbium codope zinc selenide luminescent material, and the chemical formula of this europium erbium codope zinc selenide luminescent material is ZnSe:xEu
3+, yEr
3+, wherein, x is 0.01 ~ 0.05, y be 0.01 ~ 0.06, ZnSe is matrix, Eu
3+ion and Er
3+ion is active element;
Form negative electrode on the light-emitting layer.
8. the preparation method of membrane electro luminescent device according to claim 7, is characterized in that, the preparation of described luminescent layer comprises the following steps:
According to ZnSe:xEu
3+, yEr
3+the stoichiometric ratio of each element takes ZnSe, Eu
2se
3and Er
2se
3powder also to mix at 900 DEG C ~ 1300 DEG C sintering and makes target in 0.5 hour ~ 5 hours, and wherein, x is 0.01 ~ 0.05, y is 0.01 ~ 0.06;
Described target and described substrate are loaded the vacuum cavity of magnetic-controlled sputtering coating equipment, and the vacuum tightness of vacuum cavity is set to 1.0 × 10
-3pa ~ 1.0 × 10
-5pa;
Adjustment magnetron sputtering plating processing parameter is: base target spacing is 45mm ~ 95mm, magnetron sputtering operating pressure 0.5Pa ~ 5Pa, the flow of working gas is 10sccm ~ 40sccm, underlayer temperature is 250 DEG C ~ 750 DEG C, laser energy is 80W ~ 300W, then be filmed, obtaining chemical formula is ZnSe:xEu
3+, yEr
3+europium erbium codope zinc selenide light-emitting film, described anode forms luminescent layer.
9. the preparation method of membrane electro luminescent device according to claim 8, is characterized in that, described x is 0.02, y is 0.03.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109824024A (en) * | 2019-03-18 | 2019-05-31 | 中国计量大学 | A kind of preparation method of lanthanide doped selenizing zinc nano material |
| CN109943338A (en) * | 2019-03-18 | 2019-06-28 | 中国计量大学 | A kind of near-infrared luminous rear-earth-doped InSe nanometer piece preparation method |
-
2013
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109824024A (en) * | 2019-03-18 | 2019-05-31 | 中国计量大学 | A kind of preparation method of lanthanide doped selenizing zinc nano material |
| CN109943338A (en) * | 2019-03-18 | 2019-06-28 | 中国计量大学 | A kind of near-infrared luminous rear-earth-doped InSe nanometer piece preparation method |
| CN109943338B (en) * | 2019-03-18 | 2021-12-28 | 中国计量大学 | Preparation method of near-infrared luminescent rare earth doped indium selenide nanosheet |
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