CN103270426A - Process for manufacture of thin film solar cell, and thin film solar cell - Google Patents

Process for manufacture of thin film solar cell, and thin film solar cell Download PDF

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Publication number
CN103270426A
CN103270426A CN2011800617453A CN201180061745A CN103270426A CN 103270426 A CN103270426 A CN 103270426A CN 2011800617453 A CN2011800617453 A CN 2011800617453A CN 201180061745 A CN201180061745 A CN 201180061745A CN 103270426 A CN103270426 A CN 103270426A
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electrode
slot part
substrate
layer
film solar
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CN103270426B (en
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立花伸介
棚村浩匡
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Sharp Corp
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Sharp Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
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  • Electromagnetism (AREA)
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  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

A process for manufacturing a thin film solar cell comprises: a step (S101) of forming a first separation groove part (5, 5A) in a first electrode layer (2) formed on a substrate (1) to thereby form multiple first electrode parts (2a) that are electrically separated from each other; an insulation testing step (S102) of bringing a measurement terminal (15) into contact with each of adjacent first electrode parts (2a) among the multiple first electrode parts (2a) to thereby confirm the insulating performance between the adjacent first electrode parts (2a); a step (S103) of forming a photoelectric conversion layer (3) on the first electrode layer (2); a step (S104) of forming a contact line groove part (6) in the photoelectric conversion layer (3); a step (S105) of forming a second electrode layer (4) on the photoelectric conversion layer (3) and forming a contact line that connects the first electrode layer (2) to the second electrode layer (4) in the contact line groove part (6); a step (S106) of forming a second separation groove part (7) in at least the second electrode layer (4); and a step (S107) of forming a third separation groove part (16) that reaches the first electrode layer (2) through the second electrode layer (4) and can separate a power-generating area from a non-power-generating area. An area with which a measurement terminal (15) contacts in the first electrode part (2a) is included in the non-power-generating area.

Description

The manufacture method of thin-film solar cells and thin-film solar cells
Technical field
The present invention relates to a kind of manufacture method and thin-film solar cells of thin-film solar cells.
Background technology
Existing document as the manufacture method that discloses thin-film solar cells has TOHKEMY 2000-114555 communique (patent documentation 1).In the manufacture method of the thin-film solar cells that patent documentation 1 is put down in writing, at first, form transparent electrode layer at glass substrate.Then, by being carried out laser grooving and scribing, transparent electrode layer forms wiring pattern.The transparent electrode layer that forms wiring pattern is divided into a plurality of zones, and each zone has the shape of strip, and electric property insulation each other.
Afterwards, be determined at the discrete resistor between the zone of adjacency in the transparent electrode layer, thereby determine to insulate between the zone of adjacency.At this moment, being used in the contact terminal of measuring discrete resistor directly contacts to measure with transparent electrode layer.After measuring discrete resistor, the lamination photoelectric conversion layer waits to make thin-film solar cells on transparent electrode layer.
The prior art document
Patent documentation
Patent documentation 1: TOHKEMY 2000-114555 communique
Summary of the invention
Invent technical matters to be solved
In thin-film solar cells, be formed with power generation region that generating is worked and to the inoperative non-electric power generation domain territory of generating electricity.In existing thin-film solar cells, the contact terminal directly that part of transparent electrode layer of contact is positioned at power generation region.
The inventor finds, near that part of transparent electrode layer that contact terminal directly contacts, compares the ratio height that electric leakage takes place with other parts.In the manufacture method of thin-film solar cells, comprise applying the operation that reverse bias is confirmed the heating of the part of leaking electricity.In addition, also comprise the operation of repairing or removing confirmed electric leakage happening part.But, if it is many that the part of electric leakage takes place, then by repairing or remove the electric leakage part in the thin-film solar cells product possibility of residual electric leakage happening part just increase.The characteristic that comprises the thin-film solar cells of the happening part that leaks electricity reduces.
The present invention makes in view of the above problems, and its purpose is to provide a kind of manufacture method and thin-film solar cells that reduces the generation of electric leakage and have the thin-film solar cells of stability characteristic (quality).
The method that is used for the technical solution problem
Manufacture method based on thin-film solar cells of the present invention comprises: form first and separate slot part being formed at first electrode layer on the substrate, thereby form separately the independently operation of a plurality of first electrode portions of electric property; Make and measure terminal and contact with the first electrode portion that is adjacent to each other in a plurality of first electrode portions respectively, thus the Insulation Test operation of the first electrode portion insulativity each other of definite adjacency.In addition, the manufacture method of thin-film solar cells comprises: the operation that forms photoelectric conversion layer at first electrode layer; Form the operation that osculatory is used slot part at photoelectric conversion layer.And the manufacture method of thin-film solar cells comprises: form the second electrode lay at photoelectric conversion layer, and form the operation of the osculatory that first electrode layer is connected with the second electrode lay in osculatory is used slot part; At least form second operation of separating slot part at the second electrode lay; Formation reaches the 3rd operation of separating slot part first electrode layer, that power generation region and non-electric power generation domain territory are separated from the second electrode lay.In the manufacture method of thin-film solar cells, in the first electrode portion, the zone that the mensuration terminal contacts is included in the non-electric power generation domain territory.
In the present invention's one mode, form the 3rd by etching and separate slot part.
Preferably, lamination p-type semiconductor layer, i type semiconductor layer and n type semiconductor layer and form photoelectric conversion layer successively.
Comprise based on thin-film solar cells of the present invention: substrate; Be formed on first electrode layer on the substrate; Be formed on the photoelectric conversion layer on first electrode layer; Be formed on the second electrode lay on the photoelectric conversion layer; First separate slot part with what first electrode layer separated.In addition, thin-film solar cells comprises: the osculatory that first electrode layer is connected with the second electrode lay; Second separate slot part to what major general's the second electrode lay separated; The 3rd separates slot part, and it reaches first electrode layer from the second electrode lay, and power generation region and non-electric power generation domain territory are separated.First electrode layer comprises electric property a plurality of first electrode portions independently separately and separately by the first separating tank portion.A plurality of first electrode portions have respectively and the contact area of measuring termination contact, first electrode portion each other the insulativity butt of described mensuration terminal for confirming to adjoin each other.Contact area is positioned at the non-electric power generation domain territory.
In the present invention's one mode, in contact area, there is the part of the formation region overlapping that does not separate slot part with the 3rd.
Preferably, photoelectric conversion layer has the laminated structure that lamination successively has p-type semiconductor layer, i type semiconductor layer and n type semiconductor layer.
Preferably, the non-electric power generation domain territory arranges in the mode on every side that is enclosed in power generation region, and the inward flange in non-electric power generation domain territory is positioned at apart from the scope more than the edge 6.4mm of substrate, below the 30mm.
The invention effect
According to the present invention, can reduce the generation of electric leakage and make the stability of characteristics of thin-film solar cells.
Description of drawings
Fig. 1 is the process flow diagram of operation of manufacture method of the thin-film solar cells of expression embodiment of the present invention 1.
Fig. 2 is the vertical view of outward appearance of the substrate of the above-mentioned embodiment of expression.
Fig. 3 is the figure that observes from A-A ' the line direction of arrow of Fig. 2.
Fig. 4 is the figure that observes from B-B ' the line direction of arrow of Fig. 2.
Fig. 5 is the figure that observes the preceding substrate state of S101 operation from A-A ' the line direction of arrow shown in Figure 2.
Fig. 6 is the figure that observes the preceding substrate state of S101 operation from B-B ' the line direction of arrow shown in Figure 2.
Fig. 7 is that expression is with the cut-open view of the state of substrate supporting on laser processing device.
Fig. 8 is the vertical view of observing the substrate of Fig. 7 from arrow VIII.
Fig. 9 is the figure that observes the substrate state after the S101 operation from A-A ' the line direction of arrow shown in Figure 2.
Figure 10 is the figure that observes the substrate state after the S101 operation from B-B ' the line direction of arrow shown in Figure 2.
Figure 11 represents in the above-described embodiment, will be formed with the vertical view that first substrate that separates slot part is configured in the state on the Insulation Test machine.
Figure 12 is the cut-open view of shape of contact terminal of the Insulation Test machine of the above-mentioned embodiment of expression.
Figure 13 represents in the above-described embodiment, makes the cut-open view of measuring terminal and transparent electrode layer state of contact.
Figure 14 is the figure that observes the substrate state after the S103 operation from A-A ' the line direction of arrow shown in Figure 2.
Figure 15 is the figure that observes the substrate state after the S103 operation from B-B ' the line direction of arrow shown in Figure 2.
Figure 16 is the figure that observes the substrate state after the S104 operation from B-B ' the line direction of arrow shown in Figure 2.
Figure 17 is the figure that observes the substrate state after the S105 operation from A-A ' the line direction of arrow shown in Figure 2.
Figure 18 is the figure that observes the substrate state after the S105 operation from B-B ' the line direction of arrow shown in Figure 2.
Figure 19 is the figure that observes the substrate state after the S106 operation from B-B ' the line direction of arrow shown in Figure 2.
Figure 20 is the figure that observes the substrate state after the S107 operation from A-A ' the line direction of arrow shown in Figure 2.
Figure 21 is the figure that observes the substrate state after the S107 operation from B-B ' the line direction of arrow shown in Figure 2.
Figure 22 is in the above-described embodiment, from A-A ' the line direction of arrow shown in Figure 2 observe to suppress the to leak electricity figure of the postradiation substrate state of laser that is purpose.
Figure 23 is the figure that observes the substrate state after electrode forms from B-B ' the line direction of arrow shown in Figure 2.
Figure 24 is in embodiment 2, from A-A ' the line direction of arrow shown in Figure 2 observe to suppress the to leak electricity figure of the postradiation substrate state of laser that is purpose.
Figure 25 is in embodiments of the present invention 3, observes the figure of the substrate state after the S101 operation from A-A ' the line direction of arrow shown in Figure 2.
Figure 26 is in the above-described embodiment, observes the figure of the substrate state after the S101 operation from B-B ' the line direction of arrow shown in Figure 2.
Figure 27 represents in the above-described embodiment, with the cut-open view of the state of substrate supporting on laser processing device.
Figure 28 is the vertical view of observing the substrate of Figure 27 from arrow XXVIII.
Embodiment
Below, describe with reference to manufacture method and the thin-film solar cells of accompanying drawing to the thin-film solar cells of embodiment of the present invention 1.In the following description of the embodiment, the identical Reference numeral of part mark to identical or suitable among the figure does not carry out repetition to its explanation.
＜embodiment 1 〉
Fig. 1 is the process flow diagram of operation of manufacture method of the thin-film solar cells of expression embodiment of the present invention 1.
As shown in Figure 1, in the manufacture method of the thin-film solar cells of present embodiment, at first, form first and separate slot part (S101) being formed at first electrode layer on the substrate.Utilize first to separate slot part, form separately independently a plurality of first electrode portions of electric property at first electrode layer.Confirm the first electrode portion insulativity (S102) each other of the adjacency in these a plurality of first electrode portions.Form photoelectric conversion layer (S103) at first electrode layer.Form osculatory slot part (S104) at photoelectric conversion layer.Form the second electrode lay (S105) at photoelectric conversion layer.At least form second at the second electrode lay and separate slot part (S106).By utilizing the second separation slot part that photoelectric conversion layer is separated, the thin-film solar cells units in series is connected.Formation the 3rd separates slot part (S107) with what power generation region and non-electric power generation domain territory separated.
Below, each operation is described in detail one by one.
Fig. 2 is the vertical view of outward appearance of the substrate of expression present embodiment.Fig. 3 is the figure that observes from A-A ' the line direction of arrow of Fig. 2.Fig. 4 is the figure that observes from B-B ' the line direction of arrow of Fig. 2.
As Fig. 2～shown in Figure 4, as substrate 1, used thickness to be 4mm, the substrate size glass substrate as 1000mm * 1400mm.In the present embodiment, use glass substrate as substrate 1, but as long as the material of substrate 1 has light transmission and insulativity, be not subjected to particular restriction.In the corner angle portion of substrate 1, be formed with and process the chamfered section 1a that length is the C chamfering of WM.
Fig. 5 is the figure that observes the preceding substrate state of S101 operation from A-A ' the line direction of arrow shown in Figure 2.Fig. 6 is the figure that observes the preceding substrate state of S101 operation from B-B ' the line direction of arrow shown in Figure 2.
As Fig. 5, shown in Figure 6, on substrate 1, (Chemical Vapor Deposition: chemical vapor deposition) method forms with SnO by hot CVD 2 Transparent electrode layer 2 for conduct first electrode layer of principal ingredient.Material as transparent electrode layer 2 is not limited to SnO 2If, can be as the conducting film of thin-film solar cells.The thickness of transparent electrode layer 2 on substrate 1 is made as 700nm.In the present embodiment, transparent electrode layer 2 also is formed on the side that reaches substrate 1 on the chamfered section 1a.
Then, form first at transparent electrode layer 2 and separate slot part (S101).In the present embodiment, use laser irradiation device to form first and separate slot part.
Fig. 7 is that expression is with the cut-open view of the state of substrate supporting on laser processing device.Fig. 8 is the vertical view of observing the substrate of Fig. 7 from arrow VIII.In Fig. 7, only illustrate the substrate supporting portion of laser processing device.
As Fig. 7, shown in Figure 8, in the present embodiment, the substrate supporting portion of laser processing device comprises substrate carrier 9, and this substrate carrier 9 is formed with the both ends on the length direction of substrate 1 of transparent electrode layer 2 from transparent electrode layer 2 one side bearings.In addition, substrate supporting portion comprises and being spaced from each other at interval and from a plurality of substrate rest pins 10 of the first type surface of transparent electrode layer 2 one side bearing substrates 1, so that it is crooked because of deadweight to be supported on the substrate 1 of substrate carrier 9.
Both ends 11 on the length direction of substrate carrier 9 and substrate 1 contact.In the present embodiment, the part in the about 5mm scope in edge of substrate 1 all contacts with substrate carrier 9.Substrate rest pin 10 is not to dispose with the mode of the location overlap of the illuminated laser of substrate 1.
Under the state of supporting substrates 1 as described above, make laser 12 from substrate 1 one side incidents.In the present embodiment, use the first-harmonic of YAG laser instrument as laser 12.But, as laser 12, also can use fiber laser or YVO 4The first-harmonic of laser instrument.The inboard irradiation at the both ends 11 of laser 12 on the length direction of aforesaid substrate 1.
Fig. 9 is the figure that observes the substrate state after the S101 operation from A-A ' the line direction of arrow shown in Figure 2.Figure 10 is the figure that observes the substrate state after the S101 operation from B-B ' the line direction of arrow shown in Figure 2.
Shown in Fig. 9,10, separate slot part 5,5A by making laser 12 form first from substrate 1 one side incidents, thereby make transparent electrode layer 2 be strip ground separately.Specifically, make laser 12 be spaced from each other WP at interval in the direction parallel with the length direction of substrate 1 5Repeatedly scanning irradiation of ground separates slot part 5 thereby form a plurality of first.And, make laser 12 scan irradiation apart from the position of the length direction two ends predetermined distance of substrate 1 in the mode of passing through along the direction parallel with the Width of substrate 1, separate slot part 5A thereby form 2 first.
In the present embodiment, form 91 first and separate slot part 5.First width that separates slot part 5 is made as 0.06mm, first of adjacency is separated slot part 5 interval WP each other 5Be made as 10.735mm.In addition, make first to separate slot part 5A and be formed on respectively apart from the position of the two ends 7mm of substrate 1. Separate slot part 5,5A by forming first, form separately independently a plurality of first 2a of electrode portion of electric property at transparent electrode layer 2.
Then, confirm first 2a of the electrode portion insulativity (S102) each other of adjacency.Figure 11 represents in the present embodiment, will be formed with the vertical view that first substrate that separates slot part is configured in the state on the Insulation Test machine.Figure 12 is the cut-open view of shape of contact terminal of the Insulation Test machine of expression present embodiment.
As shown in figure 11, in the Insulation Test machine, be provided with 3 pins 14 of substrate 1 location usefulness.Substrate 1 is to be configured on the Insulation Test machine with 3 pin 14 modes that contact.Specifically, be configured to make 1 pin 14 to contact with the end of the width side of substrate 1,2 pins 14 are contacted with the end of the length side of substrate 1.By such placement substrate 1, substrate 1 is located at the Insulation Test machine.But, as long as radical and the configuration of pin 14 can be located substrate 1, be not subjected to particular restriction.
To separate slot part 5A with first of 1 pin, 14 contacts, one side and be made as L apart from the distance at the edge of substrate 1 1As mentioned above, in the present embodiment, distance L 1Be 7mm.When Insulation Test, make mensuration terminal described later and separate the position contact of close a little substrate 1 inboard of slot part 5A than first.Specifically, make and measure terminal and Edge Distance L apart from substrate 1 2To distance L 3Contact area S contact in the scope.In the present embodiment, with distance L 2Be made as 8mm, with distance L 3Be made as 11mm.
Like this, by being set near 1 pin 14 as the location benchmark of substrate 1 with the contact area S that measures termination contact, can reduce the influence of the dimensional tolerence of substrate 1, contact with can making the transparent electrode layer 2 high position precision measured on terminal and the substrate 1.
Under the situation about contact at the both ends of measuring on the length direction of terminal and substrate 1, use camera etc. separate the intersection point T of slot part 5A with first to the first separation slot part 5 1And intersection point T 2Carry out image recognition, thereby carry out calibration process.So, specify the coordinate position on the substrate 1, adjust and measure the contact position that terminal contacts with transparent electrode layer 2 on the substrate 1.Under these circumstances, contact with also can making the transparent electrode layer 2 high position precision measured on terminal and the substrate 1.
As shown in figure 12, the mensuration terminal 15 of present embodiment has concaveconvex shape in order to improve with the contact of transparent electrode layer 2 at its front end.Specifically, be formed with the concavo-convex of cross section shape triangular in shape at the leading section of measuring terminal 15.
The mensuration terminal 15 of present embodiment is the mensuration terminal of four terminal formulas,, has the terminal and two group of four such butt of terminal that carries out current value mensuration that apply the bias voltage of setting at first 2a of electrode portion of adjacency each other that is.
But the form of measuring terminal is not limited to four terminal formulas, also can use the mensuration terminal of two ends minor,, has one group of two butt that utilizes butt to apply the bias voltage of setting and can carry out current value mensuration that is.In addition, consider the terminal breakage, can also comprise a terminal for preparing for the terminal that contact with first 2a of electrode portion.In this case, to contact in order making to measure in terminal 15 and the above-mentioned contact area S, to need shape and the size of selected mensuration terminal 15.
Figure 13 represents in the present embodiment, makes the cut-open view of measuring terminal and transparent electrode layer state of contact.As shown in figure 13, make and measure that terminal 15 separates slot part 5 respectively with sandwich first and first 2a of electrode portion that adjoins each other contacts with each other.Under this state, at first 2a of electrode portion of adjacency each other, apply reverse bias voltage and measure current value.Calculated first 2a of the electrode portion resistance value each other of adjacency by the current value of the magnitude of voltage that applies and mensuration.
Like this, by make measure terminal 15 respectively with a plurality of first 2a of electrode portion in first 2a of electrode portion that is adjacent to each other contact to carry out Insulation Test, thereby confirm a plurality of first 2a of electrode portion each electric property is independently naturally.
In Insulation Test, under the situation of finding the inadequate position of insulation, repair or remove this part, only the normal product with Insulation Test are delivered to subsequent processing.In subsequent processing, at first, the substrate 1 after utilizing pure water to Insulation Test carries out ultrasound wave and cleans.
Figure 14 is the figure that observes the substrate state after the S103 operation from A-A ' the line direction of arrow shown in Figure 2.Figure 15 is the figure that observes the substrate state after the S103 operation from B-B ' the line direction of arrow shown in Figure 2.
As Figure 14, shown in Figure 15, form the photoelectric conversion layer 3(S103 that is become with crystallite photoelectric conversion layer lamination by for example amorphous photoelectric conversion layer at transparent electrode layer 2), amorphous photoelectric conversion layer lamination successively has a-Si:Hp layer, a-Si:Hi layer, a-Si:Hn layer, and crystallite photoelectric conversion layer lamination successively has μ c-Si:Hp layer, μ c-Si:Hi layer, μ c-Si:Hn layer.
Variation as photoelectric conversion layer 3, for example also can use by plasma CVD method for example from transparent electrode layer 2 one sides lamination top unit successively (first photoelectric conversion layer), the photoelectric conversion layer that temporary location (second photoelectric conversion layer) and base unit (the 3rd photoelectric conversion layer) form, top unit is the p layer that is made of amorphous silicon membrane of lamination in order, i layer and n layer form, temporary location is the p layer that is made of amorphous silicon membrane of lamination in order on top unit, i layer and n layer form, and base unit is the p layer that is made of microcrystalline silicon film of lamination in order on temporary location, i layer and n layer form.In addition, also the quantity of photoelectric conversion layer can be made as more than three.
Be provided with first photoelectric conversion layer under the situation of two photoelectric conversion layers to these each photoelectric conversion layers of second photoelectric conversion layer, these each photoelectric conversion layers of first photoelectric conversion layer to the, three photoelectric conversion layers that perhaps are provided with under the situation of three photoelectric conversion layers both can all be made of congener silicon based semiconductor, perhaps also can by kind mutually different silicon based semiconductors constitute.These each photoelectric conversion layers of first photoelectric conversion layer to the, three photoelectric conversion layers also can comprise p-type semiconductor layer, i type semiconductor layer and n type semiconductor layer respectively, and each semiconductor layer also can be made of the silicon based semiconductor.Each semiconductor layer that photoelectric conversion layer contains both also can all be made of congener silicon based semiconductor, perhaps also can be made of the mutual different silicon based semiconductor of kind.
For example, also can utilize amorphous silicon to form p-type semiconductor layer and i type semiconductor layer, utilize microcrystal silicon to form the n type semiconductor layer.In addition, for example, also can utilize silit or SiGe to form p-type semiconductor layer and n type semiconductor layer, utilize silicon to form the i type semiconductor layer.And each semiconductor layer of p-type, i type and n type both can be single layer structure, also can be sandwich construction.Under the situation that is sandwich construction, each layer also can be made of the mutual different silicon based semiconductor of kind.Need to prove that in this manual, " amorphous silicon " is the concept that comprises " amorphous silicon hydride ", " microcrystal silicon " is the concept that comprises " microcrystalline hydrogenated silicon ".
Figure 16 is the figure that observes the substrate state after the S104 operation from B-B ' the line direction of arrow shown in Figure 2.As shown in figure 16, use second higher hamonic wave of YAG laser instrument to make photoelectric conversion layer 3 form wiring pattern.By making laser from substrate 1 one side incidents, form osculatory slot part 6(S104 at photoelectric conversion layer 3).In the present embodiment, use second higher hamonic wave of YAG laser instrument, but also can use YVO 4Second higher hamonic wave of laser instrument forms wiring pattern.
Osculatory forms with first to separate slot part 5 parallel with slot part 6.In the present embodiment, osculatory is made as 0.06mm with the width of slot part 6, has formed 90 osculatory with slot parts 6.In addition, with the osculatory slot part 6 distance between centers WP each other that adjoins each other 6Be made as 10.735mm.And, first right-hand member and the osculatory that separates slot part 5 shown in Figure 16 is made as 0.07mm with the distance between the left end of slot part 6.
Figure 17 is the figure that observes the substrate state after the S105 operation from A-A ' the line direction of arrow shown in Figure 2.Figure 18 is the figure that observes the substrate state after the S105 operation from B-B ' the line direction of arrow shown in Figure 2.
Shown in Figure 17,18, for example form the second electrode lay 4(S105 that is constituted by ZnO/Ag by sputtering method at photoelectric conversion layer 3).The second electrode lay 4 makes the thickness of ZnO form about 50nm, makes the thickness of Ag form about 150nm.At this moment, be formed with the osculatory that transparent electrode layer 2 is connected with the second electrode lay 4 at osculatory in slot part 6.As the formation method of the second electrode lay 4, except said method, for example also can use known vapour deposition method or ion plating etc. in the past.
Tin indium oxide) or SnO in the present embodiment, used ZnO/Ag as the second electrode lay 4, but also can use ITO(Indium Tin Oxide: 2The film high etc. light transmission replaces ZnO.In addition, also can use the high metal of Al isoreflectance to replace Ag.In the second electrode lay 4, nesa coatings such as ZnO also can be set, but by the conversion efficiency that nesa coating can improve thin-film solar cells is set.Nesa coating also can have the laminated structure that is made of a plurality of layers.In this case, both can be that all layers form by same material, also can be one deck is formed by the material different with other layers at least.
Figure 19 is the figure that observes the substrate state after the S106 operation from B-B ' the line direction of arrow shown in Figure 2.As shown in figure 19, use second higher hamonic wave of YAG laser instrument to make the second electrode lay 4 form wiring pattern.By making laser from substrate 1 one side incidents, form the second separation slot part 7(S106 at photoelectric conversion layer 3 and the second electrode lay 4).
In the present embodiment, also form second at photoelectric conversion layer 3 and separate slot part 7, separate slot part 7 but also can only form second at the second electrode lay 4.In this operation, preferably, select to suppress the silver that transparent electrode layer 2 causes damage and inhibition to constitute the second electrode lay 4 is produced the processing conditions of overlap (バ リ).In the present embodiment, use second higher hamonic wave of YAG laser instrument, but also can use YVO 4Second higher hamonic wave of laser instrument forms wiring pattern.
Second separates slot part 7 forms with first to separate slot part 5 parallel.In the present embodiment, second width that separates slot part 7 is made as 0.06mm, has formed 90 second and separated slot part 7.In addition, with the second separation slot part 7 distance between centers WP each other that adjoins each other 7Be made as 10.735mm.And the distance of osculatory shown in Figure 19 being separated with second with the right-hand member of slot part 6 between the left end of slot part 7 is made as 0.07mm.Separate slot part 7 by forming second, form the battery strings that the electric property of a plurality of film photoelectric conversion elements is serially connected in.
Figure 20 is the figure that observes the substrate state after the S107 operation from A-A ' the line direction of arrow shown in Figure 2.Figure 21 is the figure that observes the substrate state after the S107 operation from B-B ' the line direction of arrow shown in Figure 2.
As Figure 20, shown in Figure 21, from the Edge Distance WP of distance substrate 1 8The position begin, form with Rack reach the 3rd of transparent electrode layer 2 from the second electrode lay 4 and separate slot part 16(S107).In other words, the 3rd separation slot part 16 forms along the edge of substrate 1.Separate in the formation of slot part 16 the 3rd, used the first-harmonic of YAG laser instrument.
In the present embodiment, with distance W P 8Be made as 12mm, the contact area S of contact measurement terminal 15 separates the formation region overlapping of slot part 16 with the 3rd.In other words, in the Insulation Test operation, separate slot part 16 by forming the 3rd, remove and measure terminal 15 in the part of transparent electrode layer 2 contacts.
Figure 22 is in the present embodiment, from A-A ' the line direction of arrow shown in Figure 2 observe to suppress the to leak electricity figure of the postradiation substrate state of laser that is purpose.Forming the 3rd when separating slot part 16, transparent electrode layer 2 disperses sometimes and is attached to the side of photoelectric conversion layer 3.In this case, the possibility that exists the second electrode lay 4 to leak electricity with transparent electrode layer 2 short circuits.
Therefore, as shown in figure 22, the second electrode lay 4 that formation the 3rd separation slot part 16 is positioned at the side at substrate 1 length direction both ends is removed length WT with photoelectric conversion layer 3 to the inside from the 3rd side of separating slot part 16, appends slot part 17 thereby form.This formation of appending slot part 17 is to be undertaken by second higher hamonic wave of irradiation YAG laser instrument.At this moment, preferably, selection can suppress transparent electrode layer 2 is caused damage and suppresses the processing conditions that the second electrode lay 4 produces overlap.In the present embodiment, width W T is made as 0.2mm.In addition, as laser, also can use YVO 4Second higher hamonic wave of laser.
In the present embodiment, separate slot part 16 and append slot part 17 by forming the 3rd, make power generation region X that generating is worked and be positioned at power generation region X and separate on every side and to the inoperative non-electric power generation domain territory Y that generates electricity.In addition, as shown in figure 22, the contact area S that contacts with mensuration terminal 15 is included in the Y of non-electric power generation domain territory.
In the present embodiment, the inward flange of non-electric power generation domain territory Y is positioned at apart from the position of the edge 12.2mm of substrate 1, and still, the inward flange of non-electric power generation domain territory Y is preferably placed in the scope more than the edge 6.4mm of substrate 1, below the 30mm.Under the situation of distance less than 6.4mm between the edge of the inward flange of non-electric power generation domain territory Y and substrate 1, can not guarantee the insulation distance between power generation region X and the non-electric power generation domain territory Y.In addition, under the situation of distance greater than 30mm between the edge of the inward flange of non-electric power generation domain territory Y and substrate 1, the area of power generation region X is too small, and the output of thin-film solar cells reduces.
In addition, shine to form the 3rd by laser in the present embodiment and separate slot part 16, separate slot part 16 but also can form the 3rd by machining such as blasting treatment or etching.As the processing conditions of the 3rd separation slot part 16, the preferred condition of selecting not form at substrate 1 micro-crack.Under the situation that forms the 3rd separation slot part 16 by etching, do not need to form and append slot part 17.Therefore, separate slot part 16 by utilizing etching to form the 3rd, can enlarge the area of power generation region X.
Afterwards, the positive and negative polarities terminal that makes the reverse bias treating apparatus contacts and applies reverse voltage with the second electrode lay 4 of the thin-film solar cells unit of adjacency respectively, thereby repairs the electric leakage in each film photoelectric conversion element.At this moment, the mensuration terminal 15 by with Insulation Test the time contacts, and confirms to produce electric leakage and do not produce between transparent electrode layer 2 and photoelectric conversion layer 3 to peel off.
Figure 23 is the figure that observes the substrate state after electrode forms from B-B ' the line direction of arrow shown in Figure 2.As shown in figure 23, on the second electrode lay 4 in the upstream side of the direction that is connected in series of thin-film solar cells unit and downstream, be formed for the electrode 8 of output current respectively by conductive pastes such as silver paste.
Be that the adhering part of primary raw material is configured under the lip-deep state of the second electrode lay 4 after forming electrode 8 seal member being clipped with transparent ethylene-vinyl alcohol, use vacuum lamination apparatus to seal thin-film solar cells.As seal member, used the polyethylene terephthalate by PET()/ lamination film that Al/PET constitutes.Afterwards, terminal board has been bonded on the sealing backside spare of resulting thin-film solar cells, has utilized silicon tree to carry out fat in the terminal board and fill out filling, and aluminium chassis has been installed, thereby finished thin-film solar cells.
As mentioned above, namely measure the directly that part of transparent electrode layer 2 of contact of terminal 15 by the position of removing easy generation electric leakage, can produce the generation that reduces electric leakage and the thin-film solar cells with stability characteristic (quality).
In addition, as a comparative example, made following thin-film solar cells, it has the distance L with the edge of distance substrate 1 2Be made as 8mm, will be apart from the distance L at the edge of substrate 1 3Be made as the contact area S of 13mm.Manufacture method is identical with the thin-film solar cells of embodiment 1.In this case, the part of contact area S is included in the power generation region.
In the thin-film solar cells of comparative example, when reverse bias is handled, using thermoelectric detection instrument (サ ー モ ビ ュ ー ア) result that observes the electric leakage position is, measures the part part that terminal 15 contacts electric leakage taken place, and produced and peel off.
Also can confirm accordingly, in the manufacture method and thin-film solar cells of the thin-film solar cells of present embodiment, can reduce the generation of electric leakage and can make the stability of characteristics of thin-film solar cells.
Below, manufacture method and the thin-film solar cells of the thin-film solar cells of embodiment of the present invention 2 described.
＜embodiment 2 〉
The thin-film solar cells of present embodiment mainly is that to append the formation position of slot part 17 different with the thin-film solar cells of embodiment 1, therefore, will not repeat explanation for other structures.
In the thin-film solar cells of embodiment of the present invention 2, set apart from the distance L at the edge of substrate 1 2For 8mm, apart from the distance L at the edge of substrate 1 3Contact area S for 12mm.
Figure 24 is in embodiment 2, from A-A ' the line direction of arrow shown in Figure 2 observe to suppress the to leak electricity figure of the postradiation substrate state of laser that is purpose.
As shown in figure 24, in the present embodiment, from the Edge Distance WP of distance substrate 1 9The position begin, form from what the second electrode lay 4 reached substrate 1 with Rack and append slot part 17.In the present embodiment, with distance W P 9Be made as 13mm.
Specifically, use the first-harmonic of YAG laser instrument to form slot part from substrate 1 one sides at transparent electrode layer 2, photoelectric conversion layer 3 and the second electrode lay 4.Afterwards, use photoelectric conversion layer 3 and the second electrode lay 4 of second higher hamonic wave on the transparent electrode layer 2 that might become the electric leakage reason of YAG laser instrument to form slot part, append slot part 17 thereby formed.In addition, both can use fiber laser, YVO 4The first-harmonic of laser replaces the first-harmonic of YAG laser instrument, also can use YVO 4Second higher hamonic wave of laser replaces second higher hamonic wave of YAG laser instrument.
In the present embodiment, separate slot part 16 and append slot part 17 by forming the 3rd, make power generation region X that generating is worked and be positioned at power generation region X and separate on every side and to the inoperative non-electric power generation domain territory Y that generates electricity.In addition, as shown in figure 24, the contact area S that contacts with mensuration terminal 15 is included in the Y of non-electric power generation domain territory.
In contact area S, have and do not separate the overlapping non-overlapped part 18 of slot part 16 with the 3rd.But, by appending slot part 17, make non-overlapped part 18 from power generation region X separately.Therefore, the power generation characteristics that can prevent 18 pairs of thin-film solar cells of non-overlapped part brings influence.
In the present embodiment, by the position that makes easy generation electric leakage namely measure terminal 15 directly that part of transparent electrode layer 2 of contact separate from power generation region, can produce the generation that reduces electric leakage and the thin-film solar cells with stability characteristic (quality).
Below, manufacture method and the thin-film solar cells of the thin-film solar cells of embodiment of the present invention 3 described.
＜embodiment 3 〉
The thin-film solar cells of present embodiment mainly is that the formation scope of transparent electrode layer 2 is different with the thin-film solar cells of embodiment 1, embodiment 2, therefore, will not repeat explanation for other structures.
Figure 25 is in embodiment of the present invention 3, observes the figure of the substrate state after the S101 operation from A-A ' the line direction of arrow shown in Figure 2.Figure 26 is in the present embodiment, observes the figure of the substrate state after the S101 operation from B-B ' the line direction of arrow shown in Figure 2.
In the present embodiment, form SnO at the thickness with 700nm at substrate 1 2Be used as substrate 1 being cut into the size of 1000mm * 1400mm after the transparent electrode layer 2.At this moment, around substrate 1, processed chamfering.As Figure 25, shown in Figure 26, on the side of chamfered section 1a and substrate 1, do not form transparent electrode layer 2.
Therefore, in the operation that forms the first separation slot part, only form first and separate slot part 5, do not form first and separate slot part 5A.This is because even do not form the first separation slot part 5A, electric property is independent separately also can to make a plurality of first 2a of electrode portion that utilize 5 formation of the first separation slot part.
Figure 27 represents in the present embodiment, with the cut-open view of the state of substrate supporting on laser processing device.Figure 28 is the vertical view of observing the substrate of Figure 27 from arrow XXVIII.In Figure 27, only illustrate the substrate supporting portion of laser processing device.
As Figure 27, shown in Figure 28, in the present embodiment, only utilize a plurality of substrate rest pin 10 supporting substrates 1.Therefore, therefore the part that does not exist the substrate carrier 9 as enforcement mode 1 to contact with substrate 1 does not need to form first and separates slot part 5A.
In the present embodiment, do not exist shown in Figure 11 first to separate slot part 5 and separate intersection point T between the slot part 5A with first 1, T 2, therefore also can form collimating marks separately in the non-electric power generation domain territory.
In the present embodiment, set apart from the distance L at the edge of substrate 1 2For 5mm, apart from the distance L at the edge of substrate 1 3Contact area S for 10mm.Identical with embodiment 1, by the Edge Distance WP from distance substrate 1 8The position begin, form with Rack and reach the 3rd of transparent electrode layer 2 from the second electrode lay 4 and separate slot part 16, contact area S is included in the non-electric power generation domain territory.
In the present embodiment, also can namely measure the directly that part of transparent electrode layer 2 of contact of terminal 15 by the position of removing easy generation electric leakage, produce the generation that reduces electric leakage and the thin-film solar cells with stability characteristic (quality).
This disclosed above-mentioned embodiment all is exemplary in all respects, does not become the basis of limited explanation.Therefore, technical scope of the present invention is not only to be explained by above-mentioned embodiment, and the record that is based on claims delimited.In addition, be that the equal meaning and all changes in the scope are included in the technical scope of the present invention with claims.
Description of reference numerals
1 substrate; The 1a chamfered section; 2 transparent electrode layers; The 2a first electrode portion; 3 photoelectric conversion layers; 4 the second electrode lays; 5,5A first separates slot part; 6 osculatory slot parts; 7 second separate slot part; 8 electrodes; 9 substrate carriers; 10 substrate rest pins; 11 both ends; 12 laser; 14 pins; 15 measure terminal; 16 the 3rd separate slot part; 17 append slot part; 18 non-overlapped parts.

Claims (7)

1. the manufacture method of a thin-film solar cells is characterized in that, comprising:
Form first and separate slot part (5,5A) being formed at first electrode layer (2) on the substrate (1), thereby form separately the independently operation (S101) of a plurality of first electrode portions (2a) of electric property;
Make and measure terminal (15) and contact with the first electrode portion (2a) that is adjacent to each other in described a plurality of first electrode portions (2a) respectively, thereby confirm the Insulation Test operation (S102) of first electrode portion (2a) insulativity each other of described adjacency;
Form the operation (S103) of photoelectric conversion layer (3) at described first electrode layer (2);
Form the operation (S104) that osculatory is used slot part (6) at described photoelectric conversion layer (3);
Form the second electrode lay (4) at described photoelectric conversion layer (3), and in described osculatory is used slot part (6), form the operation (S105) of the osculatory that described first electrode layer (2) is connected with described the second electrode lay (4);
At least form second operation (S106) of separating slot part (7) at described the second electrode lay (4);
Formation reaches the 3rd operation (S107) of separating slot part (16) described first electrode layer (2), that power generation region and non-electric power generation domain territory are separated from described the second electrode lay (4);
In the described first electrode portion (2a), the zone that described mensuration terminal (15) contacts is included in the described non-electric power generation domain territory.
2. the manufacture method of thin-film solar cells as claimed in claim 1 is characterized in that,
Form the described the 3rd by etching and separate slot part (16).
3. the manufacture method of thin-film solar cells as claimed in claim 1 or 2 is characterized in that,
Lamination p-type semiconductor layer, i type semiconductor layer and n type semiconductor layer and form described photoelectric conversion layer (3) successively.
4. a thin-film solar cells is characterized in that, comprising:
Substrate (1);
Be formed on first electrode layer (2) on the described substrate (1);
Be formed on the photoelectric conversion layer (3) on described first electrode layer (2);
Be formed on the second electrode lay (4) on the described photoelectric conversion layer;
First separate slot part (5,5A) with what described first electrode layer (2) separated;
The osculatory that described first electrode layer (2) is connected with described the second electrode lay (4);
Second separate slot part (7) to what the described the second electrode lay of major general (4) separated;
The 3rd separates slot part (16), and it reaches described first electrode layer (2) from described the second electrode lay (4), and power generation region and non-electric power generation domain territory are separated;
Described first electrode layer (2) comprises by described first and separates slot part (5,5A) separately and electric property a plurality of first electrode portions (2a) independently separately,
Described a plurality of first electrode portion (2a) has respectively and measures the contact area that terminal (15) contacts, first electrode portion (2a) each other the insulativity butt of described mensuration terminal (15) for confirming to adjoin each other,
Described contact area is positioned at described non-electric power generation domain territory.
5. thin-film solar cells as claimed in claim 4 is characterized in that,
In described contact area, there is the part of not separating the formation region overlapping of slot part (16) with the described the 3rd.
6. as claim 4 or 5 described thin-film solar cells, it is characterized in that,
Described photoelectric conversion layer (3) has the laminated structure that lamination successively has p-type semiconductor layer, i type semiconductor layer and n type semiconductor layer.
7. as each described thin-film solar cells in the claim 4 to 6, it is characterized in that,
Described non-electric power generation domain territory arranges in the mode on every side that is enclosed in described power generation region,
The inward flange in described non-electric power generation domain territory is positioned at the scope that edge 6.4mm is above, 30mm is following apart from described substrate.
CN201180061745.3A 2010-12-22 2011-11-08 The manufacture method of thin-film solar cells and thin-film solar cells Expired - Fee Related CN103270426B (en)

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