CN103268882A - High-voltage LED chip with microstructural antireflection film - Google Patents
High-voltage LED chip with microstructural antireflection film Download PDFInfo
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- CN103268882A CN103268882A CN2013102110745A CN201310211074A CN103268882A CN 103268882 A CN103268882 A CN 103268882A CN 2013102110745 A CN2013102110745 A CN 2013102110745A CN 201310211074 A CN201310211074 A CN 201310211074A CN 103268882 A CN103268882 A CN 103268882A
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Abstract
The invention belongs to the field of semiconductor emitting device manufacturing, and particularly relates to a high-voltage LED chip with a microstructural antireflection film. The high-voltage LED chip with the microstructural antireflection film comprises a sapphire substrate, a buffering layer, a N-type layer, a quantum well layer, a P-type layer, an electrode on the P-type layer, an electrode on the N-type layer, a cross structure, an ITO layer and an antireflection film body, wherein the antireflection film body covers the ITO layer and is provided with a cylindrical microstructure. The high-voltage LED chip with the microstructural antireflection film can effectively reduce reflection losses when an LED emerges light, and meanwhile light ray total reflection from the chip to the air can be reduced through the microstructure. Meanwhile, the antireflection film can restrain dampness of the chip and diffusion of impurities, and a final protective function is achieved.
Description
Technical field
The invention belongs to light emitting semiconductor device and make the field, be specifically related to have the high-voltage LED chip of micro-structural anti-reflection film.
Background technology
LED is a kind of energy-saving and environmental protection and long-life, free of contamination luminescent device.Its energy consumption only is 10% of incandescent lamp, 50% of fluorescent lamp.The light efficiency of existing known great power LED can reach 160lm/w, and stable operation environment is the electric current of direct current 350mA, and operating voltage is generally 3V, can't use civil power directly to drive.In order to overcome above-mentioned technical barrier, high-voltage LED arises at the historic moment as a kind of LED of new structure.The drive current of high-voltage LED is generally 20mA, and operating voltage is generally 45-50V, generally 4 high-voltage LEDs is directly connected, and just can reach the operating voltage 220V of civil power, is convenient to realize the direct driving of civil power.Existing known high-voltage LED connects formations such as bridge, ITO layer generally by the electrode on Sapphire Substrate, resilient coating, N-type layer, quantum well layer, P type layer, P layer and the N layer.Because the refractive index of ITO layer is bigger, a large amount of light falls because total internal reflection is converted to thermal losses.Simultaneously, because the sudden change of interfacial refraction rate causes the reflection loss of light, thereby the light extraction efficiency of the LED of high pressure is caused harmful effect.
The structure of present known common process high-voltage LED chip is array structure, and it is divided into several little chip particles (being generally 15-17) with the core grain of a 45*45mil on an epitaxial wafer.Primary structure comprises: the electrode on Sapphire Substrate, resilient coating, N-type layer, quantum well layer, P type layer, P layer and the N layer, connection bridge, ITO layer.Under the prerequisite of the light absorption of not considering material, luminous when active layer, when photon arrives chip and air interfacial, owing to change of refractive, cause a large amount of light energies to be reflected back toward chip internal and finally turn to heat and distribute.Simultaneously, change of refractive between the interface, light is from the chip directive external world time, and the light efficiency that causes of total reflection further reduces.Directly cause its outer quantum effect low.
Anti-reflection film material commonly used at present mainly contains silicon nitride (SiN
x), silicon dioxide (SiO
2), silicon oxynitride (SiON
x) several, also have and use metal oxide film.Wherein, the cost of silica membrane is minimum, but structure is comparatively loose, and vacuum density is higher, and it is relatively poor relatively that moistureproof anti-metal ion is stained ability.Silicon nitride (is generally Si
3N
4) film is compared silicon dioxide aspect the diffusion of anti-impurity and the water vapor permeable remarkable advantages, but there are a large amount of interface charges and defective between silicon nitride film and the chip interface, causing electrical properties to device to produce seriously influences (referring to Liu Baofeng, Li Hongfeng, Gionee state. " semiconductor device passivation layer Si
3N
4The preparation of film and characteristic research " [J]. Harbin University of Science and Technology's journal, 2003,8 (6): 10).And the refractive index of silicon dioxide and silicon nitride is respectively 1.45 and 2.0, and the refractive index of best anti-reflection film material should be as far as possible near 1.58.Thereby the front both be not the anti-reflection film material with preferable transmission performance.And the refractive index of SiON can realize the scope interior adjustable (being generally 1.58-1.71) of 1.6-1.7.Therefore, SiON is present the most outstanding anti-reflection film material, can realize anti-reflecting properties preferably.
Summary of the invention
For inner total reflection and the reflection loss that overcomes the common process high-voltage LED, improve light extraction efficiency, the invention provides a kind of high-voltage LED chip with micro-structural anti-reflection film.Described anti-reflection film can effectively reduce the reflection loss that is caused by the refractive index sudden change.And its surface micro-structure can effectively reduce the total internal reflection of light, thereby improves light extraction efficiency.
Technical scheme of the present invention comprises:
A kind of high-voltage LED chip with micro-structural anti-reflection film, comprise a plurality of luminescence units, each luminescence unit comprises jewel substrate 1, resilient coating 2, N-type layer 3, quantum well layer 4, P type layer 5 and ITO layer 6 from bottom to up successively, each luminescence unit also comprises electrode 7 on the P type layer and the electrode 8 on the N-type layer, electrode between the adjacent luminescence unit connects by connecting bridge 9, each luminescence unit also comprises the anti-reflection film 10 that covers on the ITO layer, and the anti-reflection film end face that is positioned at ITO layer 6 top has cylindric micro-structural.
Further optimize, the corresponding anti-reflection wavelength of anti-reflection film is consistent with chip active layer emission wavelength.The high pressure chip is all based on blue light at present, and emission wavelength is about 455nm.Select for use SiON as film material, its refractive index adjustable in the scope of 1.6-1.7 (being generally 1.58-1.71).
Further optimize, described anti-reflection film thickness is 1/4th of LED emission wavelength.
Further optimize, the thickness of described micro-structural is 1/10 of anti-reflection film thickness.
Further optimize, described anti-reflection film also covers the side between the electrode 8 of ITO layer upper surface to the N-type layer, and has only the anti-reflection film of ITO layer top to have cylindric micro-structural except covering ITO layer top.
Further optimize the ITO layer whole outer surface of described anti-reflection covering chip.
Further optimize, the cylinder bottom surface radius of described cylindric micro-structural is 1.5um, and height is 100 dusts.
Further optimize, the adjacent column bottom surface distance of center circle of described cylindric micro-structural is from being 4um～6um.
Further optimize, described anti-reflection film adopts PECVD(plasma enhanced chemical vapor deposition method) deposit the formation of SiON film, and etch cylindric micro-structural by ICP (Inductively Coupled Plasma – inductively coupled plasma).
Further optimize, utilize SiH
4And N
2O, NH
3Reactive deposition SiON film, the refractive index of SiON film are 1.58～1.71.
In the present existing scheme, use SiO is arranged
2As anti-reflection film, though its cost is low, but compactness is poor, it is relatively poor relatively that moistureproof anti-metal ion is stained ability.Have and use SiON as the anti-reflection film material, its surface does not have micro-structural, though can effectively reduce reflected energy, thereby increase transmission, but because the existence of the angle of total reflection, it is original 39.1% to impel the outgoing energy to have only, and can not really effectively improve light extraction efficiency.The metal oxide film that uses passivation is at random also arranged as the anti-reflection film material, it uses a kind of antireflection anti-reflection film that is used as in tin oxide, aluminium oxide, magnesium oxide, zinc oxide aluminum, indium oxide, tin ash, tin indium oxide, antimonous oxide, the bismuth oxide different materials.But metal material cost height, and the bad control of refractive index can not really reach anti-reflection effect.
Compared with prior art, the present invention has following advantage and technique effect:
(1) compares the high-voltage LED of common process, can effectively reduce the reflection loss of chip internal, be lifted out optical efficiency;
(2) by the micro-structural on surface, can effectively destroy the chip inner total reflection, effectively improve the outgoing energy;
(3) micro-structural adopts cylindric and highly is no more than 100 dusts, can keep the planarization of light output surface, thereby guarantee the validity of anti-reflection film.
Description of drawings
Fig. 1 is the generalized section of high-voltage LED chip structure.Among the figure, 1-Sapphire Substrate, 2-resilient coating, 3-N type layer, 4-quantum well layer, 5-P type layer, 7, the electrode on 8-P layer and the N layer, 9-connect bridge, 6-ITO layer, 10-anti-reflection film.
Embodiment
Below in conjunction with accompanying drawing and example, concrete enforcement of the present invention is described further, but enforcement of the present invention and protection are not limited thereto.
See also Fig. 1, a kind of high-voltage LED chip with micro-structural anti-reflection film, comprise a plurality of luminescence units, each luminescence unit comprises jewel substrate 1, resilient coating 2, N-type layer 3, quantum well layer 4, P type layer 5 and ITO layer 6 from bottom to up successively, each luminescence unit also comprises electrode 7 on the P type layer and the electrode 8 on the N-type layer, electrode between the adjacent luminescence unit connects by connecting bridge 9, each luminescence unit also comprises the anti-reflection film 10 that covers on the ITO layer, and the anti-reflection film end face that is positioned at ITO layer 6 top has cylindric micro-structural.
The main emission wavelength of general blue chip is 455nm, and then anti-reflection film thickness is the 1140 Izod right sides, during actual processing procedure, and should be greater than 1140 dusts, so that in anti-reflection film upper surface etching micro-structural.
The anti-reflection film thicknesses of layers should be and mainly goes out 1/4 of optical wavelength.When light enters film from chip, primary event takes place, be made as reflection ray A.And then light will produce reflection for the second time, reflection ray B between film and the external world.Be example with direct projection light, light B compares light A and walks 2 times to the distance of film thickness more, and when destructive interference took place for light A and light B, the antireflective effect of anti-reflection film reached maximum.Then film thickness d satisfies formula:
Generally get k=0, then film thickness is
As the direct outgoing of the light of fruit chip, by Fresnel reflection rate formula:
Light shines from chip internal in the middle of the air, n
1=1(air refraction), n
2The refractive index of=2.54(GaN), the result of calculation reflection loss nearly 19%.Increased under the situation of anti-reflection film, light arrives anti-reflection film from chip, has anti-reflection film to penetrate again and goes.
When light arrives anti-reflection film from chip because the refractive index of silicon oxynitride is about 1.6, this moment n
1=1.6, can calculate reflection loss by the Fresnel reflection rate is 5.1%.T is namely arranged
1=94.9% energy arrives anti-reflection film.And when light from the anti-reflection film outgoing time, reflection loss calculates can get 5.3%, transmission potential t
2=94.7%.Then total outgoing energy is t=t
1* t
2=89.9%.By contrast, light directly incides the air from chip, and reflection loss is 19%, outgoing energy t
0For original 81%, then light extraction efficiency has improved (t-t
0)/t
0=11%.
On the other hand, do not having under the situation of micro-structural, inner total reflection can take place from the surperficial outgoing of silicon oxynitride the time in light.By total reflection formula:
Wherein, n
1=1, n
2=1.6, calculating can get θ
All=38.7 °.By formula:
Then calculate and can obtain, chip front side outgoing energy has only 39.1% of the interior energy of the above 2 π solid angle scopes of chip and air interface.Increased after the cylindrical surface micro-structural, will destroy original inner total reflection, thereby improved its outgoing energy.
A kind of manufacture craft of the open said structure of the present invention.Anti-reflection film material selection SiON, its coating film thickness be for mainly to go out 1/4 of optical wavelength, about 1100 dusts, and concrete technology comprises:
(1) chip that will finish other processing steps cleans up by the QDR manufacturing process for cleaning;
(2) chip is put into PECVD, and place Coating Materials;
(3) carry out film-plating process according to setting program;
(4) after plated film is finished, check its coating film thickness, coating film thickness should be greater than 1100 dusts, so that in film surface etching micro-structural;
(5) use the ICP etch process, etch cylindric micro-structural at film surface;
(6) clean the chip that etching is finished, and under light microscope, check etching quality.
The present invention surpasses 11% to the raising of the light extraction efficiency of high-voltage LED chip.The above is specific embodiments of the invention only, is not in order to limiting protection scope of the present invention, and every other do not break away from various remodeling and the modification of carrying out in claims scope, all should be within the scope of the present invention.
Claims (10)
1. high-voltage LED chip with micro-structural anti-reflection film, comprise a plurality of luminescence units, each luminescence unit comprises jewel substrate 1, resilient coating 2, N-type layer 3, quantum well layer 4, P type layer 5 and ITO layer 6 from bottom to up successively, each luminescence unit also comprises electrode 7 on the P type layer and the electrode 8 on the N-type layer, electrode between the adjacent luminescence unit connects by connecting bridge 9, it is characterized in that each luminescence unit also comprises the anti-reflection film 10 that covers on the ITO layer, the anti-reflection film end face that is positioned at ITO layer 6 top has cylindric micro-structural.
2. a kind of high-voltage LED chip with micro-structural anti-reflection film according to claim 1 is characterized in that described anti-reflection film adopts the SiON material.
3. a kind of high-voltage LED chip with micro-structural anti-reflection film according to claim 1 is characterized in that described anti-reflection film thickness is 1/4th of LED emission wavelength.
4. a kind of high-voltage LED chip with micro-structural anti-reflection film according to claim 3, the thickness that it is characterized in that described micro-structural is 1/10 of anti-reflection film thickness.
5. a kind of high-voltage LED chip with micro-structural anti-reflection film according to claim 1, it is characterized in that described anti-reflection film except covering ITO layer top, also cover the side between the electrode 8 of ITO layer upper surface to the N-type layer, and have only the anti-reflection film of ITO layer top to have cylindric micro-structural.
6. a kind of high-voltage LED chip with micro-structural anti-reflection film according to claim 1 is characterized in that the ITO layer whole outer surface of described anti-reflection covering chip.
7. a kind of high-voltage LED chip with micro-structural anti-reflection film according to claim 1 is characterized in that the cylinder bottom surface radius of described cylindric micro-structural is 1.5um, and height is 100 dusts.
8. a kind of high-voltage LED chip with micro-structural anti-reflection film according to claim 1 is characterized in that the adjacent column bottom surface distance of center circle of described cylindric micro-structural is from being 4um ~ 6um.
9. the micro-structural anti-reflection film of raising high-voltage LED light extraction efficiency according to claim 1 is characterized in that: described anti-reflection film adopts PECVD deposition SiON film to form, and etches cylindric micro-structural by ICP.
10. the micro-structural anti-reflection film of raising high-voltage LED light extraction efficiency according to claim 9 is characterized in that: utilize SiH
4And N
2O, NH
3Reactive deposition SiON film, the refractive index of SiON film are 1.58 ~ 1.71.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103981508A (en) * | 2014-04-25 | 2014-08-13 | 武汉新芯集成电路制造有限公司 | Silicon oxynitride gradient anti-reflection thin film and preparation process thereof |
| CN111129257A (en) * | 2019-12-30 | 2020-05-08 | 广东德力光电有限公司 | Ultraviolet high-reflectivity composite electrode and preparation method thereof |
| CN111710766A (en) * | 2020-06-19 | 2020-09-25 | 中国工程物理研究院电子工程研究所 | Visible light LED chip with composite antireflection film with adjustable refractive index |
| WO2023273098A1 (en) * | 2021-06-29 | 2023-01-05 | 河源市众拓光电科技有限公司 | Led device for visible light communication |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1819290A (en) * | 2005-02-10 | 2006-08-16 | 株式会社东芝 | White led and manufacturing method therefor |
| CN102790045A (en) * | 2011-05-18 | 2012-11-21 | 展晶科技(深圳)有限公司 | Light emitting diode array and manufacturing method thereof |
| WO2013070421A1 (en) * | 2011-11-09 | 2013-05-16 | Bridgelux, Inc. | Series connected segmented led |
| CN203288594U (en) * | 2013-05-30 | 2013-11-13 | 华南理工大学 | High-voltage LED chip having microstructure reflection reducing coating |
-
2013
- 2013-05-30 CN CN2013102110745A patent/CN103268882A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1819290A (en) * | 2005-02-10 | 2006-08-16 | 株式会社东芝 | White led and manufacturing method therefor |
| CN102790045A (en) * | 2011-05-18 | 2012-11-21 | 展晶科技(深圳)有限公司 | Light emitting diode array and manufacturing method thereof |
| WO2013070421A1 (en) * | 2011-11-09 | 2013-05-16 | Bridgelux, Inc. | Series connected segmented led |
| CN203288594U (en) * | 2013-05-30 | 2013-11-13 | 华南理工大学 | High-voltage LED chip having microstructure reflection reducing coating |
Non-Patent Citations (1)
| Title |
|---|
| 达小丽: "钝化膜提高GaN基LED光提取效率研究", 《固体电子学研究与进展》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103981508A (en) * | 2014-04-25 | 2014-08-13 | 武汉新芯集成电路制造有限公司 | Silicon oxynitride gradient anti-reflection thin film and preparation process thereof |
| CN111129257A (en) * | 2019-12-30 | 2020-05-08 | 广东德力光电有限公司 | Ultraviolet high-reflectivity composite electrode and preparation method thereof |
| CN111710766A (en) * | 2020-06-19 | 2020-09-25 | 中国工程物理研究院电子工程研究所 | Visible light LED chip with composite antireflection film with adjustable refractive index |
| WO2023273098A1 (en) * | 2021-06-29 | 2023-01-05 | 河源市众拓光电科技有限公司 | Led device for visible light communication |
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Application publication date: 20130828 |
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