CN103268870A - Packaging structure for glass sealing electronic component - Google Patents
Packaging structure for glass sealing electronic component Download PDFInfo
- Publication number
- CN103268870A CN103268870A CN2013102382186A CN201310238218A CN103268870A CN 103268870 A CN103268870 A CN 103268870A CN 2013102382186 A CN2013102382186 A CN 2013102382186A CN 201310238218 A CN201310238218 A CN 201310238218A CN 103268870 A CN103268870 A CN 103268870A
- Authority
- CN
- China
- Prior art keywords
- lead
- glass
- sealing
- wire
- leading part
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention relates to an electronic component packaging structure and in particular relates to a packaging structure for a glass sealing electronic component. The packaging structure comprises a metal substrate, wherein a sealing hole is formed in the metal substrate; a lead is arranged in the sealing hole; glass is arranged between the lead and the wall of the sealing hole; the lead comprises an upper lead part of which the upper part is exposed out of the metal substrate and the surface of the glass and penetrates through the sealing hole; the upper lead part has a columnar structure; a lower lead part is connected to the lower part of the upper lead part; and the diameter of the upper lead part is larger than that of the lower lead part. According to the packaging structure for the glass sealing electronic component, the defects that the lead bonding is instable, the glass is cracked and broken, the gas tightness is low and the overall device is low in reliability in domestic similar electronic components are overcome. Compared with foreign similar electronic components, the packaging structure has the advantages that when the design is applied to a high-power packaging shell, the lead can be lower in loss by increasing the current to a certain degree.
Description
Technical field
The present invention relates to the electronic devices and components encapsulating structure, especially a kind of encapsulating structure of glass sealing electronic devices and components.
Background technology
Because when the use of chip, chip must be isolated with external environment, the corrosion of chip circuit is caused electric property descend to prevent airborne impurity; On the other hand, the chip after the encapsulation also is more convenient for installing and transportation.So when chip used on circuit board, ordinary circumstance must encapsulate chip.
Encapsulation; just refer to the circuit pin on the chip; connect with lead and to guide to external lug place; in order to be connected with other device; packing forms refers to install the shell that semiconductor integrated circuit chip is used; it not only plays a part to install, fixes, seals, protects aspects such as chip and enhancing electric heating property; but also be wired to by the contact on the chip on the pin of package casing; these pins are connected with other devices by the lead on the printed circuit board (PCB) again, thereby realize being connected of inside chip and external circuit.
Because the quality of encapsulation technology also directly has influence on design and the manufacturing of the performance of chip self performance and the PCB that is attached thereto (printed circuit board), so it is vital.
As depicted in figs. 1 and 2, existing encapsulating structure generally comprises two kinds of structures, also is the present external and domestic more general encapsulating structure that adopts respectively.In external encapsulating structure shown in Figure 1, comprise a metal substrate 1, be provided with the reducing lead-in wire 2 that passes metal substrate in the sealing-in hole on the described metal substrate 1, encapsulate by glass 3 between reducing lead-in wire 2 and the metal substrate 1; Reducing lead-in wire 2 comprises top 21, middle part 22 and bottom 23, and the diameter of top 21, middle part 22 and bottom 23 dwindles step by step; In the domestic encapsulating structure shown in Figure 2, comprise a metal substrate 4, be provided with the lead-in wire 5 of taking the lead that passes metal substrate 4 in the sealing-in hole of described metal substrate 4, described taking the lead encapsulates by glass 6 between lead-in wire 5 and the metal substrate 4, and the lead-in wire 5 of wherein taking the lead comprises top 51 and bottom 52.Since encapsulation to bubble-tight requirement than higher, and above-mentioned reducing lead-in wire and take the lead lead-in wire when passing glass, as Fig. 1, external reducing lead-in wire can guarantee reliability of products as a kind of more rational design.But consider domestic working ability to this type of lead-in wire and processing cost, economic serviceability is not high; As the domestic this packing forms of lead-in wire of taking the lead of Fig. 2, relatively poor with the anti-mechanical shock ability in wire bond place behind the glass sintering, cause glass fragmentation faced easily or crack, the air-tightness of influence encapsulation, thus influence the stability of electronic devices and components use.
Summary of the invention
The invention provides a kind of stability that improves encapsulating structure, guarantee the encapsulating structure of the glass sealing electronic devices and components of good packaging air tightness.
To achieve these goals, the present invention adopts following technical scheme:
It comprises a metal substrate, metal substrate is provided with the sealing-in hole, described sealing-in is provided with lead-in wire in the hole, be provided with glass between lead-in wire and the sealing-in hole wall, its improvement is: described lead-in wire comprises that top is exposed to metal substrate and glass surface and runs through the last leading part in sealing-in hole, last leading part is a column construction, and the described leading part below of going up is connected with down leading part, and the described leading part diameter of going up is greater than following leading part.
Preferably, described leading part down and edge, last leading part junction are provided with the soldering joint portion.
Preferably, the described diameter of leading part of going up is more than or equal to 1/2nd of aperture, sealing-in hole.
Preferably, the material of last leading part is the 4J50 alloy, and the material of following leading part is oxygen-free copper, and the material of braze is the alloy of silver and copper.
Owing to adopted such scheme, the encapsulating structure of glass sealing electronic devices and components of the present invention to overcome the lead-in wire bonding instability that domestic similar electronic devices and components show, glass crack, cracked, poor air-tightness, the defective that the integral device reliability is low.Compare with external similar electronic devices and components, the design when being applied to high-power package casing, can accomplish that lead-in wire strengthens the characteristics that loss is lower by electric current to a certain extent.
Description of drawings
Fig. 1 is existing reducing leaded packages schematic diagram;
Fig. 2 is the existing leaded packages schematic diagram of taking the lead;
Fig. 3 is encapsulating structure schematic diagram of the present invention;
Fig. 4 is the existing leaded packages bonding defect sturcture schematic diagram of taking the lead;
Fig. 5 is bonding face height and the glass sealing part diameter wire sign picture of existing reducing leaded packages;
Fig. 6 is bonding face height and the glass sealing part diameter wire sign picture of the existing leaded packages of taking the lead;
Fig. 7 is bonding face height and the glass sealing part diameter wire sign picture of present embodiment encapsulating structure;
Fig. 8 is existing reducing leaded packages glass and lead-in wire sealing-in junction and the crooked impetus schematic diagram of lead-in wire;
Fig. 9 is existing leaded packages glass and lead-in wire sealing-in junction and the crooked impetus schematic diagram of lead-in wire of taking the lead;
Figure 10 is the glass and lead-in wire sealing-in junction and the crooked impetus schematic diagram of lead-in wire of present embodiment encapsulating structure;
Figure 11 is the diameter and height sign picture at the glass packaging position of existing reducing leaded packages;
Figure 12 is the diameter and height sign picture at the glass packaging position of the existing leaded packages of taking the lead;
Figure 13 is the diameter and height sign picture at the glass packaging position of present embodiment encapsulating structure.
Embodiment
As shown in Figure 1, the encapsulating structure of the glass packaging electronic devices and components of present embodiment comprises a metal substrate 7, metal substrate 7 is provided with the sealing-in hole, be provided with lead-in wire 8 in the described sealing-in hole, be provided with glass 9 between lead-in wire 8 and the sealing-in hole wall, described lead-in wire 8 comprises that top is exposed to metal substrate and glass surface and runs through the last leading part 81 in sealing-in hole, last leading part 81 is a column construction, described leading part 81 belows of going up are connected with down leading part 82, and described leading part 81 diameters of going up are greater than following leading part 82; Described leading part 82 down is provided with soldering joint portion 10 with edge, last leading part 81 junction; In order to improve intensity and performance, the diameter of the last leading part 71 described in the present embodiment is more than or equal to 1/2nd of aperture, sealing-in hole.
Below to the analysis of making comparisons of the various performances of the encapsulating structure of present embodiment and existing encapsulating structure:
At first, the air-tightness of components and parts is to guarantee the composition of components and parts internal gas, pressure, and the vacuum degree of internal cavities is not changed.When device sealing failed to reach the relevant art requirement, the gas ingredients of device inside cavity, pressure, vacuum degree etc. just can not satisfy the specification requirement under the corresponding conditions yet, influence device operate as normal even inefficacy; Guarantee that outside adverse circumstances weather is not corroded to the components and parts inside chip.
Two kinds of performances can influence the components and parts packaging air tightness in the glass sealing process: 1, glass crack, 2, glass fragmentation faced; Above-mentioned two defectives especially take place when the lead-in wire bonding easily, no matter be existing encapsulating structure or the encapsulating structure of present embodiment, the lead-in wire bonding is by spun gold or Si-Al wire the chip of electronic devices and components package casing to be connected with lead-in wire, to set up chip and outside being electrically connected, guaranteeing the unimpeded of chip and outside I/O, is entire device operation and the key of working.
In the encapsulation process of electronic devices and components, high-power package casing particularly, need diameter more than 100 microns thick Si-Al wire set up when being connected between chip and the lead-in wire, in bonding process, can produce bigger impulsive force to pressure welding face (lead-in wire top end face).If lead-in wire and glass sealing place diameter are below 1mm, during bonding, impulsive force can cause the lead-in wire vibration.
As shown in Figure 4, pressure welding face 53 is subjected to displacement in vibration processes or tilts, and the Si-Al wire bonding skids, the lead-in wire bonding failure; Glass is in the vibration processes with the lead-in wire sealing-in can cause glass fragmentation faced, the chronic leakage of device, and air-tightness lost efficacy.
As Fig. 5-shown in Figure 7, during the lead-in wire bonding, two kinds of failure mode keys that the vibration of influence lead-in wire causes are two sizes of lead design: thick (height) degree of bonding end face, size h21, h51, h81 in the diagram; With glass-sealed lead portion diameter, size d22, d52, d81 in the diagram.
As seen from the figure, in three kinds of sealing structures, h81〉h21〉h51; D81〉d22〉d52, and h, d value are more big, and lead-in wire is more stable when bonding, and about not understanding, side-to-side vibrations can be guaranteed lead-in wire bonding and the air-tightness of components and parts.
So in the product actual application, two kinds of failure modes the when encapsulating structure of reducing leaded packages and present embodiment can not occur going between bonding, and the leaded packages of taking the lead can't be avoided; And from the design principle of pressure sealing-in, the encapsulating structure of present embodiment more meets design principle in the balance more of the stress between lead-in wire, glass and the base material three after the sealing-in.
Below to the contrast of three kinds of sealing-in forms about the electronic component down-lead testing fatigue:
The glass sealing outer lead of components and parts need be done the lead-in wire testing fatigue of crooked 90 degree, if crackle or cracked appears in the glass of glass and lead-in wire sealing-in place, then sealing strength is not enough, influences the air-tightness of components and parts.
Shown in Fig. 8-10, h1, h2, h3 are lower end, glass sealing position apart from the distance of bending impetus among the figure, wherein, h2=0, not shown, p1, p2, p3 are the bending impetus.
Be the testing fatigue structure chart of reducing lead-in wire, d22 among Fig. 8〉d23, middle part 22 parts and glass carry out sealing-in, during the lead-in wire crooked test impetus at the middle part 22 with the junction p1 of bottom 23, the distance of distance lead-in wire and glass sealing place reservation h1.So this type of sealing-in form is in lead-in wire testing fatigue process, glass sealing place can not produce glass crack and cracked, can guarantee the air-tightness of electronic devices and components.
The testing fatigue structure chart of the lead-in wire of taking the lead as shown in Figure 9, with outer lead bending left 90 degree, impetus acts directly on the junction p2 of lead-in wire and glass during the lead-in wire crooked test, and the characteristic of seal glass shows as not tension, and diagram right side glass and wire bond place can crack with cracked.So the product of domestic other sealing-in forms in lead-in wire testing fatigue process, can't be avoided the crackle of glass and cracked.
As shown in figure 10, present embodiment and glass-sealed lead-in wire are by two ends lead-in wire soldering be combined into.With outer lead bending left 90 degree, impetus acts on the junction p3 of two ends lead-in wire soldering during the lead-in wire crooked test, does not act directly on glass and sealing-in place that goes between, and glass and wire bond place can not crack with cracked.Identical with the reducing lead-in wire, the encapsulating structure of present embodiment is being done the lead-in wire testing fatigue or in actual application, lead-in wire is being applied external force glass is cracked.
In addition, in the sealing-in of electronic devices and components pressure, lead-in wire and the sealing-in area of glass be mainly reflected in design lead-in wire to the diameter of the actual sealing-in part of glass and glass to effective sealing-in height partly that goes between.
Shown in Figure 11-13, d22, d52, d81 represent the to go between diameter of actual sealing-in part, h4, h5, h6 represent the height of the effective sealing-in part of glass.
Effective sealing-in area: S=2 π d/2h
Because d81〉d22〉d52, according to result of calculation as can be known, and effective sealing-in area maximum of the structural glass of design and lead-in wire, the sealing-in area is more big, and the ability of bearing outside destroy is more high, and to device inner chamber circuit, the protection of chip is more reliable.
The electronic devices and components package casing by size of current, has corresponding requirement to lead-in wire.Particularly powerful package casing needs lead that big electric current is arranged, low-loss design feature, and the parameter that influences size of current has: Dao Xian Transverse sectional area, conductor length, conductor material (resistivity).So to electronic devices and components glass sealing lead design the time, should adopt big cross section as far as possible, short-term, the material of low-resistivity.Electronic devices and components pressure sealing-in now design is adopted 4J50 alloy (copper can not as lead-in wire and the direct sealing-in of glass) substantially with the lead material of the direct sealing-in of glass.
What existing reducing lead-in wire adopted is the 4J50 alloy material, adopts punch process to be integral the lead-in wire of three reducings.Go between as can be seen in last diagram top 21, middle part 22 and bottom 23 is tapered from top to bottom; The stamping forming technology but this reducing goes between, domestic factory does not possess, if adopt the mode of Vehicle Processing to produce three sections reducing lead-in wires, production and technology for electronic devices and components have lost economy and practicality.
What the domestic pin configuration of taking the lead that generally adopts adopted is the 4J50 alloy material, and the lead-in wire of punch forming is simple and convenient, but from the preamble analysis, no matter the lead-in wire of this specification is aspect the bonding or air-tightness of device, all unreliable.
In the encapsulating structure in the present embodiment, lead-in wire is divided into leading part 81, following leading part 82, and integral body is welded by the yellow gold braze.The material of last leading part 81 is 4J50, and the material of following leading part 82 is oxygen-free copper, and the material of braze is the alloy of silver and copper.
Analyze from the material (resistivity) selected for use, because resistivity is at (under 20 ℃ of degree normal temperature):
Silver: 1.6x10
-8Ω m
Copper: 1.75x10
-8Ω m
4J50：45.5?x10
-8?Ω·m
So, so silver＜copper＜4J50, comprehensive 3 kinds of sealing structures, the comprehensive resistivity minimum of the lead-in wire of present embodiment.
And from accompanying drawing as can be seen, in the multiple encapsulating structure of enumerating, the lead-in wire Zai Transverse sectional area of the encapsulating structure of present embodiment is greater than comparative product, so lead-in wire has big cross section, low resistance is by the characteristics of magnitude of current maximum.
The above only is the preferred embodiments of the present invention; be not so limit claim of the present invention; every equivalent structure or equivalent flow process conversion that utilizes specification of the present invention and accompanying drawing content to do; or directly or indirectly be used in other relevant technical fields, all in like manner be included in the scope of patent protection of the present invention.
Claims (4)
1. the encapsulating structure of glass sealing electronic devices and components, comprise a metal substrate, metal substrate is provided with the sealing-in hole, described sealing-in is provided with lead-in wire in the hole, be provided with glass between lead-in wire and the sealing-in hole wall, it is characterized in that: described lead-in wire comprises that top is exposed to metal substrate and glass surface and runs through the last leading part in sealing-in hole, and last leading part is a column construction, the described leading part below of going up is connected with down leading part, and the described leading part diameter of going up is greater than following leading part.
2. the encapsulating structure of glass sealing electronic devices and components as claimed in claim 1 is characterized in that: described leading part down and edge, last leading part junction are provided with the soldering joint portion.
3. the encapsulating structure of glass sealing electronic devices and components as claimed in claim 2 is characterized in that: the described diameter of leading part of going up is more than or equal to 1/2nd of aperture, sealing-in hole.
4. the encapsulating structure of glass sealing electronic devices and components as claimed in claim 3 is characterized in that: the material of going up leading part is the 4J50 alloy, and the material of following leading part is oxygen-free copper, and the material of braze is the alloy of silver and copper.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310238218.6A CN103268870B (en) | 2013-06-17 | 2013-06-17 | The encapsulating structure of glass sealing electronic devices and components |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310238218.6A CN103268870B (en) | 2013-06-17 | 2013-06-17 | The encapsulating structure of glass sealing electronic devices and components |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103268870A true CN103268870A (en) | 2013-08-28 |
| CN103268870B CN103268870B (en) | 2016-03-02 |
Family
ID=49012492
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310238218.6A Active CN103268870B (en) | 2013-06-17 | 2013-06-17 | The encapsulating structure of glass sealing electronic devices and components |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103268870B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104439784A (en) * | 2014-11-17 | 2015-03-25 | 中国电子科技集团公司第四十三研究所 | Butt-joint low-resistance lead for electronic packaging and manufacturing method thereof |
| CN105261603A (en) * | 2015-09-10 | 2016-01-20 | 济南市半导体元件实验所 | Heavy-current glass sealed schottky diode and preparation technology |
| CN105321887A (en) * | 2014-06-04 | 2016-02-10 | 日本电气太空技术株式会社 | Package and method for fabricating package |
| CN105387928A (en) * | 2015-12-21 | 2016-03-09 | 苏州长风航空电子有限公司 | Threading-type connector seal structure |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1536658A (en) * | 2003-03-31 | 2004-10-13 | ��ʽ���������Ƽ� | Semiconductor device and its mfg. method |
| CN1674221A (en) * | 2004-03-25 | 2005-09-28 | 雅马哈株式会社 | Semiconductor package and method for manufacturing the same |
| CN101969033A (en) * | 2009-07-27 | 2011-02-09 | St微电子(格勒诺布尔2)有限公司 | Method of electrically connecting a bond wire to a bond pad of an integrated circuit chip and the corresponding electronic device |
| CN203300633U (en) * | 2013-06-17 | 2013-11-20 | 浙江长兴电子厂有限公司 | A packaging structure of a glass-sealed electronic component |
-
2013
- 2013-06-17 CN CN201310238218.6A patent/CN103268870B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1536658A (en) * | 2003-03-31 | 2004-10-13 | ��ʽ���������Ƽ� | Semiconductor device and its mfg. method |
| CN1674221A (en) * | 2004-03-25 | 2005-09-28 | 雅马哈株式会社 | Semiconductor package and method for manufacturing the same |
| CN101969033A (en) * | 2009-07-27 | 2011-02-09 | St微电子(格勒诺布尔2)有限公司 | Method of electrically connecting a bond wire to a bond pad of an integrated circuit chip and the corresponding electronic device |
| CN203300633U (en) * | 2013-06-17 | 2013-11-20 | 浙江长兴电子厂有限公司 | A packaging structure of a glass-sealed electronic component |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105321887A (en) * | 2014-06-04 | 2016-02-10 | 日本电气太空技术株式会社 | Package and method for fabricating package |
| CN105321887B (en) * | 2014-06-04 | 2019-05-28 | 日本电气太空技术株式会社 | Packaging body and method for manufacturing packaging body |
| CN104439784A (en) * | 2014-11-17 | 2015-03-25 | 中国电子科技集团公司第四十三研究所 | Butt-joint low-resistance lead for electronic packaging and manufacturing method thereof |
| CN105261603A (en) * | 2015-09-10 | 2016-01-20 | 济南市半导体元件实验所 | Heavy-current glass sealed schottky diode and preparation technology |
| CN105261603B (en) * | 2015-09-10 | 2018-01-16 | 济南市半导体元件实验所 | High current glass seals Schottky diode and manufacture craft |
| CN105387928A (en) * | 2015-12-21 | 2016-03-09 | 苏州长风航空电子有限公司 | Threading-type connector seal structure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103268870B (en) | 2016-03-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI711237B (en) | Optical semiconductor element package | |
| CN103268870B (en) | The encapsulating structure of glass sealing electronic devices and components | |
| JP2005530990A (en) | Equipment for pressure measurement | |
| CN101680812A (en) | Differential pressure sensor arrangement and corresponding production method | |
| CN107084815A (en) | Pressure sensing cell and the pressure sensor using the pressure sensing cell | |
| CN203300633U (en) | A packaging structure of a glass-sealed electronic component | |
| CN103411726B (en) | A kind of pressure unit | |
| CN102856468B (en) | Light emitting diode packaging structure and manufacturing method thereof | |
| ITMI20011965A1 (en) | CONDUCTORS OF A NO-LEAD TYPE CONTAINER OF A SEMICONDUCTIVE DEVICE | |
| US11502045B2 (en) | Electronic device with step cut lead | |
| CN102800765A (en) | Light emitting diode (LED) packaging structure and packaging process for same | |
| CN203277796U (en) | Hermetically sealed connector | |
| JP6978509B2 (en) | Bonded structures, semiconductor packages and semiconductor devices | |
| CN212648235U (en) | Lead frame and related signal transmission plate | |
| KR20040103778A (en) | Lead frame and semiconductor device using the same | |
| CN203205400U (en) | Air-tight metal case for surface mounting | |
| CN107622984A (en) | A kind of encapsulating structure of electronic device | |
| JP6036218B2 (en) | Pressure sensor | |
| CN111540724A (en) | Base frame, signal transmission plate and related chip packaging method and semiconductor packaging chip | |
| CN220274005U (en) | Anti-shaping airtight electronic packaging shell structure | |
| CN205248261U (en) | A package lead for microwave device table pastes and encapsulates and connection structure thereof | |
| CN101894830B (en) | Stack type package structure and manufacturing method thereof | |
| CN205246940U (en) | Optical fiber device shell | |
| CN103268868A (en) | Gas tightness metal shell used for surface mounting | |
| JP2008008829A (en) | Pressure sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 313117 South Taihu Electronic Information Industrial Park, Meishan Town, Changxing County, Huzhou City, Zhejiang Province Patentee after: Zhejiang Dongci Technology Co.,Ltd. Address before: 313000 Huaikan Electronic Industrial Park, Changxing County, Huzhou City, Zhejiang Province Patentee before: ZHEJIANG S-SQUARE PRECISELY ELECTRONIC FACTORY CO.,LTD. |