CN105261603B - High current glass seals Schottky diode and manufacture craft - Google Patents
High current glass seals Schottky diode and manufacture craft Download PDFInfo
- Publication number
- CN105261603B CN105261603B CN201510573368.1A CN201510573368A CN105261603B CN 105261603 B CN105261603 B CN 105261603B CN 201510573368 A CN201510573368 A CN 201510573368A CN 105261603 B CN105261603 B CN 105261603B
- Authority
- CN
- China
- Prior art keywords
- schottky diode
- chip
- high current
- glass bulb
- glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000011521 glass Substances 0.000 title claims abstract description 90
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims abstract description 30
- 238000007789 sealing Methods 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 7
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 5
- 239000000956 alloy Substances 0.000 claims abstract description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 9
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 239000004332 silver Substances 0.000 claims description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- 241000500881 Lepisma Species 0.000 claims description 7
- 229910000679 solder Inorganic materials 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 239000005355 lead glass Substances 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 239000005308 flint glass Substances 0.000 claims description 5
- 238000007747 plating Methods 0.000 claims description 5
- 238000005476 soldering Methods 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 230000000694 effects Effects 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 239000011265 semifinished product Substances 0.000 claims description 3
- 238000005245 sintering Methods 0.000 abstract description 2
- 230000001133 acceleration Effects 0.000 abstract 1
- 150000003839 salts Chemical class 0.000 abstract 1
- 230000035939 shock Effects 0.000 abstract 1
- 239000000047 product Substances 0.000 description 15
- 238000010586 diagram Methods 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
Abstract
The invention discloses the manufacture craft of a kind of high current glass envelope Schottky diode and the Schottky diode, the high current glass envelope Schottky diode includes glass bulb, the chip inside glass bulb and is connected to the upper lead of glass bulb upper and lower ends and lower lead, the bottom of upper lead is provided with a metal strip surfaces, metal strip surfaces and chip upper surface pressure contact, chip lower surface is provided with weld tabs, and chip is bonded by weld tabs with lower lead high temperature alloy.The manufacture craft includes sintering process and sealing process, Schottky diode reliability of the present invention is high, and the main reliability requirement such as junction temperature, storage temperature, thermal shock, exit intensity, moisture-proof, frequency sweep vibrations, constant acceleration, salt fog is satisfied by military domain requirement.
Description
Technical field
The present invention relates to a kind of high current glass envelope Schottky diode and manufacture craft, belongs to Schottky diode glass envelope skill
Art field.
Background technology
Schottky glass envelope product is mostly low current at present, generally less than 1A, and 1A-3A Schottky diode is mostly plastic packaging
Product.Due to the poor reliability of plastic packaging product, the occasion higher to Schottky diode performance requirement can not be met, such as military project or
In person's Aerospace Engineering, this just needs to research and develop a kind of can applying in military project and Aero-Space aerospace engineering for high reliability
High current glass envelope Schottky diode.
The content of the invention
The defects of for prior art, the present invention disclose a kind of high current glass envelope Schottky diode, also disclosed described
High current glass seals the manufacture craft of Schottky diode, and high current glass envelope Schottky diode reliability is high, suitable for Xiao Te
The higher place of based diode performance requirement.
In order to solve the technical problem, the technical solution adopted by the present invention is：A kind of high current glass envelope Schottky two pole
Pipe, including glass bulb, the chip inside glass bulb and the upper lead of glass bulb upper and lower ends and lower lead are connected to, above draw
The bottom of line is provided with a metal strip surfaces, metal strip surfaces and chip upper surface pressure contact, and chip lower surface is provided with weld tabs, chip
It is bonded by weld tabs with lower lead high temperature alloy.
In high current glass envelope Schottky diode of the present invention, the metal strip surfaces are shaped as S-shaped.
In high current glass envelope Schottky diode of the present invention, the metal strip surfaces are shaped as C-shaped.
In high current glass envelope Schottky diode of the present invention, the Schottky diode is sealed using D2-03A types glass bulb
Dress.
In high current glass envelope Schottky diode of the present invention, the Schottky diode is sealed using D2-03B types glass bulb
Dress.
In high current glass envelope Schottky diode of the present invention, the metal strip surfaces are designed using surface gold-plating.
In high current glass envelope Schottky diode of the present invention, the upper lead and lower lead use Dumet wire, glass bulb
Using flint glass, weld tabs uses slicker solder silver soldering piece.
The manufacturing process of high current glass envelope Schottky diode of the present invention comprises the following steps：
1）, lower lead glass bulb loaded into mould, weld tabs is loaded in glass bulb, the weldering that is then gently put into chip in glass bulb
On piece, it is desirable to which chip is smooth, and without vertical piece, in the right direction, mould gently buckles die cap alignment orientation after filling；
2）, furnace temperature is raised to TStove=360-370 °C when, be passed through hydrogen and nitrogen, hydrogen flowing quantity be 500ml/min ±
100ml/min, nitrogen flow are 10 l/min ± 500ml/min, then put mould to fire door and preheat；After the preheated one-section time
Mould is pushed into flat-temperature zone, mould is pulled to fire door by constant temperature afterwards for a period of time, cooling；
3）, upper lead glass bulb loaded into the semi-finished product that sinter, sealed with sealing machine, made in capping processes at device
Glass bulb is heated to 600 °C ~ 700 °C in vacuum environment, and with heater strip, melts the glass ball of glass bulb sealing part and upper lead
And seal, while metal strip surfaces reach close good face with chip under weight effect and contacted.
The manufacture craft of high current glass envelope Schottky diode of the present invention, the preheating time of lower lead is 10min, permanent
The warm time is 20min, cool time 15min.
The manufacture craft of high current glass envelope Schottky diode of the present invention, the heater strip is platinum filament, and heater strip adds
The hot time is 1min.
Beneficial effects of the present invention：Schottky diode of the present invention uses glass package structure, and the lead of glass bulb is strong
Degree meets requirement of the military project to product mechanical strength；The bottom of upper lead is connected with metal strip surfaces, and metal is flexible and and chip
Upper surface pressure contact, chip is set to be not easy to fail, reliability is high, and metal strip surfaces are designed using surface gold-plating, can be reduced
Chip and the contact resistance of metal tape face piece；Upper lead and lower lead use Dumet wire, and glass bulb uses flint glass, and weld tabs is adopted
With slicker solder silver soldering piece, thermal matching is good between structure, and welded seal reliability is higher, and thermal fatigue resistance is good；The pole of Schottky two
In the manufacture craft of pipe, sintering, sealing cap process ensure that chip and upper and lower lead good connection, ensure chip without too high again
Temperature causes the change of product parameters；Vacuum environment is used in capping processes, being advantageous to the moisture content in product in atmosphere reduces,
The hot properties of product can be ensured, and prevent weld tabs, chip oxidation.
Brief description of the drawings
Fig. 1 is the external structure schematic diagram of Schottky diode of the present invention；
Fig. 2 is the internal structure schematic diagram using the Schottky diode of D2-03A types glass bulb encapsulation；
Fig. 3 is the internal structure schematic diagram using the Schottky diode of D2-03B types glass bulb encapsulation；
Fig. 4 is Fig. 1 Section A-A figure；
In figure：1st, glass bulb, 2, chip, 3, upper lead, 4, lower lead, 5, metal strip surfaces, 6, weld tabs.
Embodiment
The present invention is described further and limits with specific embodiment below in conjunction with the accompanying drawings.
Embodiment 1
As shown in figure 1, a kind of high current glass envelope Schottky diode, including glass bulb 1, the chip 2 inside glass bulb 1 with
And the upper lead 3 of the upper and lower ends of glass bulb 1 and lower lead 4 are connected to, the bottom of upper lead 3 is provided with a metal strip surfaces 5, gold
Belong to zone face 5 and the upper surface pressure contact of chip 2, the lower surface of chip 2 is provided with weld tabs 6, and chip 2 passes through weld tabs 6 and the lower high temperature of lead 4
Alloy bonding.
In the present embodiment, the metal strip surfaces 5 are S-shaped, in order to reduce the contact resistance between chip 2 and metal strip surfaces 5, gold
Belong to zone face 5 to design using surface gold-plating.Increase metal strip surfaces 5 can make chip 2 be not easy to fail, and increase the reliability of chip.
In the present embodiment, the upper lead 3 and lower lead 4 use Dumet wire, and glass bulb 1 uses flint glass, and weld tabs 6 is adopted
With slicker solder silver soldering piece.The Dumet wire coefficient of expansion is 8.2~9.2 × 10-6/ DEG C, the flint glass coefficient of expansion 7.3~10.6 ×
10-6/ DEG C, the chip coating metal Ag coefficients of expansion 19 × 10-6/ DEG C, the coefficient of expansion 2.5 × 10 of silicon-6/ DEG C, it is swollen by heat
Swollen coefficient and transition metal characteristic finds out that thermal matching is good between structure, and welded seal reliability is higher, thermal fatigue resistance
It is good.
In the present embodiment, Schottky diode is encapsulated using D2-03A types glass bulb, and appearance and size meets GB 7581-1987
《Semi-conductor discrete device appearance and size》In D2-03A（DO-7）The regulation of type.
In the present embodiment, the maximum rating and electrical characteristics of the Schottky diode are：
Maximum rating
Electrical characteristics（Unless otherwise specified,T A=25℃）
In the present embodiment, a kind of manufacture craft of high current glass envelope Schottky diode, comprise the following steps：
1）, lower lead glass bulb loaded into mould, weld tabs is loaded in glass bulb, the weldering that is then gently put into chip in glass bulb
On piece, it is desirable to which chip is smooth, and without vertical piece, in the right direction, mould gently buckles die cap alignment orientation after filling；
2）, furnace temperature is raised to TStoveAt=365 °C, hydrogen and nitrogen are passed through, hydrogen flowing quantity is 500ml/min ± 100ml/
Min, nitrogen flow are 10 l/min ± 500ml/min, then put mould to fire door and preheat；Mould is pushed away after preheating 10min
Enter flat-temperature zone, mould is pulled to fire door after constant temperature 20min, cool down 15min；It so both ensure that chip well connected with lower lead
Connect, and can ensures that chip causes the transformation of product parameters without high temperature；
3）, upper lead glass bulb loaded into the semi-finished product that sinter, sealed with sealing machine, made in capping processes at device
Glass bulb is heated to 600 °C ~ 700 °C in vacuum environment, and with heater strip, melts the glass ball of glass bulb sealing part and upper lead
And seal, while metal strip surfaces reach close good face with chip under weight effect and contacted, so both ensure that chip with
Upper lead good connection and glass bulb sealing, and can ensure that chip causes the transformation of product parameters without high temperature.
In the present embodiment, the heater strip is platinum filament, and the heater strip heat time is 1min.The fusing point of slicker solder silver soldering piece exists
280 ° or so.Selection platinum filament is because molybdenum, tungsten ductility are bad for heater strip, is unfavorable for adjusting heater strip in production process at any time
Shape, golden fusing point is relatively low, is easily blown.Several frequently seen metallic character is shown in Table 1：
1 several metallic characters of table
The determination of vacuum：When packaging machine is heated and sealed, weld tabs slicker solder silver, the chip silver surface of product easily aoxidize, because
This, must add vacuum in sealing.The moisture content for adding vacuum to be advantageous in product in atmosphere reduces, it is ensured that the high temperature of product is special
Property.If being not added with vacuum in sealing in addition, weld tabs slicker solder silver, the chip silver surface of product easily aoxidize blackening, and product exists
It is easily exceeded during high temperature leakage testses.
The selection of power added by heater strip：Power makes greatly very much that glass bulb fusing is too fast, and it is even to easily cause glass bulb uneven heating, makes glass
Shell thermal stress cannot discharge, and influence the reliability of product；Power is too small to make glass bulb melt slowly, glass bulb is sealed not
It is good.Therefore, the selection of power is highly important thing, in the present embodiment, adjusts the power added by heater strip, makes glass bulb short
Be heated to 600 DEG C~700 DEG C in time (1 minute), the glass ball fusing of glass bulb sealing part and upper lead and seal.
Embodiment 2
A kind of high current glass seals Schottky diode, including glass bulb, the chip inside glass bulb and is connected to
The upper lead of glass bulb upper and lower ends and lower lead, the bottom of upper lead are provided with a metal strip surfaces, metal strip surfaces and chip upper table
Surface pressure contacts, and chip lower surface is provided with weld tabs, and chip is bonded by weld tabs with lower lead high temperature alloy.
In the present embodiment, the metal strip surfaces are C-shaped, in order to reduce the contact resistance between chip and metal strip surfaces, metal
Zone face is designed using surface gold-plating, and increase metal strip surfaces can make chip be not easy to fail, and increase the reliability of chip.It is upper and lower
Lead, glass bulb, the selection of weld tabs are identical with embodiment 1.
In the present embodiment, Schottky diode is encapsulated using D2-03B types glass bulb, and appearance and size meets GB 7581-1987
In D2-03B types rule.
In the present embodiment, the maximum rating of Schottky diode and main electrical characteristics are：
Maximum rating
Main electrical characteristics（Unless otherwise specified,T A=25℃）
In the present embodiment, the manufacture craft of high current glass envelope Schottky diode is identical with embodiment 1, does not do here tired
State.
It should be noted last that above embodiment is merely illustrative of the technical solution of the present invention and unrestricted,
Although the present invention is described in detail with reference to preferred embodiment, it will be understood by those within the art that, can be right
Technical scheme is modified or equivalent substitution, and without departing from the spirit and scope of technical solution of the present invention, its is equal
It should cover among scope of the presently claimed invention.
Claims (10)
1. a kind of high current glass seals Schottky diode, it is characterised in that：Chip including glass bulb, inside glass bulb and point
Be not connected to the upper lead of glass bulb upper and lower ends and lower lead, the bottom of upper lead is provided with a metal strip surfaces, metal strip surfaces with
Chip upper surface pressure contact, chip lower surface are provided with weld tabs, and chip is bonded by weld tabs with lower lead high temperature alloy, bonding temperature
Spend for 360-370 °C.
2. high current glass according to claim 1 seals Schottky diode, it is characterised in that：The shape of the metal strip surfaces
For S-shaped.
3. high current glass according to claim 1 seals Schottky diode, it is characterised in that：The shape of the metal strip surfaces
For C-shaped.
4. high current glass according to claim 2 seals Schottky diode, it is characterised in that：The Schottky diode is adopted
Encapsulated with D2-03A types glass bulb.
5. high current glass according to claim 3 seals Schottky diode, it is characterised in that：The Schottky diode is adopted
Encapsulated with D2-03B types glass bulb.
6. the high current glass envelope Schottky diode according to any one of claim 2,3,4,5, it is characterised in that：The gold
Belong to zone face to design using surface gold-plating.
7. the high current glass envelope Schottky diode according to any one of claim 2,3,4,5, it is characterised in that：On described
Lead and lower lead use Dumet wire, and glass bulb uses flint glass, and weld tabs uses slicker solder silver soldering piece.
A kind of 8. manufacture craft of high current glass envelope Schottky diode described in claim 1, it is characterised in that：Including following step
Suddenly：
1）, lower lead glass bulb loaded into mould, weld tabs is loaded in glass bulb, the weld tabs that is then gently put into chip in glass bulb
On, it is desirable to chip is smooth, and without vertical piece, in the right direction, mould gently buckles die cap alignment orientation after filling；
2）, furnace temperature is raised to TStove=360-370 °C when, be passed through hydrogen and nitrogen, hydrogen flowing quantity is 500ml/min ± 100ml/
Min, nitrogen flow are 10 l/min ± 500ml/min, then put mould to fire door and preheat；By mould after the preheated one-section time
Flat-temperature zone is pushed into, mould is pulled to fire door by constant temperature afterwards for a period of time, is cooled down；
3）, upper lead glass bulb loaded into the semi-finished product that sinter, sealed with sealing machine, device is in true in capping processes
In Altitude, and glass bulb is heated to 600 °C ~ 700 °C with heater strip, makes the glass ball fusing of glass bulb sealing part and upper lead and close
Envelope, while metal strip surfaces reach close good face with chip under weight effect and contacted, Schottky diode completes.
9. the manufacture craft of high current glass envelope Schottky diode according to claim 8, it is characterised in that：Lower lead
Preheating time is 10min, constant temperature time 20min, cool time 15min.
10. the manufacture craft of high current glass envelope Schottky diode according to claim 8 or claim 9, it is characterised in that：It is described
Heater strip is platinum filament, and the heater strip heat time is 1min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510573368.1A CN105261603B (en) | 2015-09-10 | 2015-09-10 | High current glass seals Schottky diode and manufacture craft |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510573368.1A CN105261603B (en) | 2015-09-10 | 2015-09-10 | High current glass seals Schottky diode and manufacture craft |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105261603A CN105261603A (en) | 2016-01-20 |
| CN105261603B true CN105261603B (en) | 2018-01-16 |
Family
ID=55101221
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510573368.1A Active CN105261603B (en) | 2015-09-10 | 2015-09-10 | High current glass seals Schottky diode and manufacture craft |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105261603B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003007946A (en) * | 2001-06-27 | 2003-01-10 | Enomoto Co Ltd | Lead frame for surface-mounting led and manufacturing method thereof |
| CN101764111A (en) * | 2010-01-05 | 2010-06-30 | 苏州群鑫电子有限公司 | Axial type surface contact type glass packaging rectifier tube and manufacture method |
| CN103268870A (en) * | 2013-06-17 | 2013-08-28 | 浙江长兴电子厂有限公司 | Packaging structure for glass sealing electronic component |
| CN103745935A (en) * | 2013-12-19 | 2014-04-23 | 北京时代民芯科技有限公司 | Vacuole-free transparent glass shell and metal sealing method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002305068A (en) * | 2001-04-04 | 2002-10-18 | Hirose Electric Co Ltd | Terminal for electric connector, and terminal material with carrier |
-
2015
- 2015-09-10 CN CN201510573368.1A patent/CN105261603B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003007946A (en) * | 2001-06-27 | 2003-01-10 | Enomoto Co Ltd | Lead frame for surface-mounting led and manufacturing method thereof |
| CN101764111A (en) * | 2010-01-05 | 2010-06-30 | 苏州群鑫电子有限公司 | Axial type surface contact type glass packaging rectifier tube and manufacture method |
| CN103268870A (en) * | 2013-06-17 | 2013-08-28 | 浙江长兴电子厂有限公司 | Packaging structure for glass sealing electronic component |
| CN103745935A (en) * | 2013-12-19 | 2014-04-23 | 北京时代民芯科技有限公司 | Vacuole-free transparent glass shell and metal sealing method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105261603A (en) | 2016-01-20 |
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Effective date of registration: 20240130 Address after: No. 13856 Jingshi West Road, Ping'an Street, Changqing District, Jinan City, Shandong Province, 250000 Patentee after: JINAN JINGHENG ELECTRONICS Co.,Ltd. Guo jiahuodiqu after: Zhong Guo Address before: No. 51 Heping Road, Jinan City, Shandong Province, 250014 Patentee before: JINAN SEMICONDUCTOR Research Institute Guo jiahuodiqu before: Zhong Guo |
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