CN103262228B - 具有抗电迁移馈线结构的ic器件 - Google Patents

具有抗电迁移馈线结构的ic器件 Download PDF

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Publication number
CN103262228B
CN103262228B CN201180060401.0A CN201180060401A CN103262228B CN 103262228 B CN103262228 B CN 103262228B CN 201180060401 A CN201180060401 A CN 201180060401A CN 103262228 B CN103262228 B CN 103262228B
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sub
trajectory
welding pad
bonding welding
keying element
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CN103262228A (zh
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G·E·霍华德
P·汤普森
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Texas Instruments Inc
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Texas Instruments Inc
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H01L2924/143—Digital devices
    • H01L2924/1433—Application-specific integrated circuit [ASIC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H01L2924/143—Digital devices
    • H01L2924/1434—Memory
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/146—Mixed devices
    • H01L2924/1461—MEMS

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Wire Bonding (AREA)
CN201180060401.0A 2010-12-16 2011-12-16 具有抗电迁移馈线结构的ic器件 Active CN103262228B (zh)

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US12/970,464 US8531030B2 (en) 2010-12-16 2010-12-16 IC device having electromigration resistant feed line structures
PCT/US2011/065355 WO2012083110A2 (en) 2010-12-16 2011-12-16 Ic device having electromigration resistant feed line structures

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US9318413B2 (en) 2013-10-29 2016-04-19 Globalfoundries Inc. Integrated circuit structure with metal cap and methods of fabrication
US9318414B2 (en) 2013-10-29 2016-04-19 Globalfoundries Inc. Integrated circuit structure with through-semiconductor via
US9515035B2 (en) 2014-12-19 2016-12-06 International Business Machines Corporation Three-dimensional integrated circuit integration
US10068181B1 (en) * 2015-04-27 2018-09-04 Rigetti & Co, Inc. Microwave integrated quantum circuits with cap wafer and methods for making the same
US10289794B2 (en) 2016-12-14 2019-05-14 Taiwan Semiconductor Manufacturing Company Ltd. Layout for semiconductor device including via pillar structure
US10833036B2 (en) 2018-12-27 2020-11-10 Texas Instruments Incorporated Interconnect for electronic device
US11362047B2 (en) * 2020-04-16 2022-06-14 Texas Instruments Incorporated Integrated system-in-package with radiation shielding

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US20080026560A1 (en) * 2002-06-25 2008-01-31 Unitive International Limited Methods of forming electronic structures including conductive shunt layers and related structures
US20050028123A1 (en) * 2003-07-28 2005-02-03 Senol Pekin Optimized bond out method for flip chip wafers
US20080042271A1 (en) * 2005-02-01 2008-02-21 Dauksher Walter J Trace Design to Minimize Electromigration Damage to Solder Bumps

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