CN103258903A - Method for processing photovoltaic device and photovoltaic device - Google Patents
Method for processing photovoltaic device and photovoltaic device Download PDFInfo
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- CN103258903A CN103258903A CN2012100425002A CN201210042500A CN103258903A CN 103258903 A CN103258903 A CN 103258903A CN 2012100425002 A CN2012100425002 A CN 2012100425002A CN 201210042500 A CN201210042500 A CN 201210042500A CN 103258903 A CN103258903 A CN 103258903A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The invention provides a method for processing a photovoltaic device and the photovoltaic device. The method for processing the photovoltaic device comprises the following steps that a photovoltaic device provided with a substrate, a first electrode layer, a photovoltaic conversion structure and a second electrode layer is manufactured; a paint layer reflecting a pattern is arranged on the second electrode layer; a part of the paint layer, a part of the second electrode layer and a part of the photovoltaic conversion structure in an area of the photovoltaic device are removed, and therefore light transmittance of the area is larger than original light transmittance of the photovoltaic device.
Description
Technical field
The invention relates to a kind of photovoltaic devices (photovoltaic device) and manufacture method thereof, and particularly relevant for photovoltaic devices and manufacture method thereof with perspective (see-thru) effect.
Background technology
Because the fossil energy shortage, people improve the cognition of environmental protection importance.Therefore, people constantly actively research and develop the correlation technique of alternative energy source and the renewable energy resources in recent years, the influence that when hope can reduce the present mankind for the degree of dependence of fossil energy and use fossil energy environment is brought.In the technology of numerous alternative energies and the renewable energy resources, comprised inexhaustible solar power generation.Because solar energy itself can not produce public hazards and obtain easily, so solar power generation becomes the first-selection of alternative energy.
In field of solar thermal power generation, can utilize photoelectric effect at present, with photovoltaic devices transform light energy is become electric energy.When accepting solar light irradiation, photovoltaic devices can become electric energy with transform light energy, and output voltage and electric current.
Yet, desire the technology of applied solar energy generating, one or more different size or size and photovoltaic devices with photoelectric converting function is arranged on the surface of device or building usually are in order to receive the irradiation of light.Photovoltaic devices on device or building surface typically will influence its outward appearance.Therefore, on practice, need have attractive in appearance and efficient device of solar generating concurrently.
Summary of the invention
A purpose of the present invention is that a kind of method of handling photovoltaic devices is being provided.In a specific embodiment, method of the present invention comprises following steps: the preparation photovoltaic devices, and photovoltaic devices comprises substrate, first electrode layer, opto-electronic conversion structure and the second electrode lay that forms in regular turn; Coat of colo(u)r is set on the second electrode lay, coat of colo(u)r presents a pattern; And remove part coat of colo(u)r, part the second electrode lay and part opto-electronic conversion structure in the zone of photovoltaic devices, cause this regional light transmittance greater than the original light transmittance of photovoltaic devices.
According to one embodiment of the invention, this coat of colo(u)r, this second electrode lay and this opto-electronic conversion structure have the identical zone that is removed.
According to one embodiment of the invention, this removes step is to be undertaken by energy beam, lithography, chemical etching or Wet-type etching.
According to one embodiment of the invention, after the preparation photovoltaic devices and before coat of colo(u)r is set, further comprise the dividing elements processing procedure.
According to one embodiment of the invention, this removes step and further comprises following steps: a shade is set on this substrate, to define this zone; And see through this shade, remove this coat of colo(u)r of part, this second electrode lay of part and this opto-electronic conversion structure of part in this zone with an energy beam.
According to one embodiment of the invention, after this shade step is set and in removing before the step that this energy beam carries out, further comprise the dividing elements processing procedure.
According to one embodiment of the invention, this shade comprises design identical on a part and the pattern of this coat of colo(u)r at least.
According to one embodiment of the invention, this removes step further comprises a backboard applying step after finishing.
Another object of the present invention is that a kind of photovoltaic devices is being provided.
Another object of the present invention is that a kind of photovoltaic devices is being provided, and wherein this photovoltaic devices has the effect of part perspective, and can present preset pattern in this photovoltaic devices back side.
According to a specific embodiment, photovoltaic devices of the present invention comprises substrate, be formed at first electrode layer on the substrate, be formed at opto-electronic conversion structure on first electrode layer, be formed at the structural the second electrode lay of opto-electronic conversion and be arranged at coat of colo(u)r on the second electrode lay, and coat of colo(u)r presents a pattern.Especially, the part coat of colo(u)r in the zone of photovoltaic devices, part the second electrode lay and part opto-electronic conversion structure are removed, and cause this regional light transmittance greater than the original light transmittance of photovoltaic devices.
According to one embodiment of the invention, this coat of colo(u)r, this second electrode lay and this opto-electronic conversion structure have the identical zone that is removed.
Therefore, photovoltaic devices processing method of the present invention can provide the photovoltaic devices of having integrated perspective fully or part transparent effect and colour image or vision design, so as to provide have the visual sense of beauty advantage and can be applicable to build or other appropriate device on photovoltaic devices.In addition, because the opto-electronic conversion structure that removes in the zone only partly removes, so remove the function that the zone still can have opto-electronic conversion.
Description of drawings
For above-mentioned and other purposes of the present invention, feature, advantage and embodiment can be become apparent, appended the description of the drawings is as follows:
Fig. 1 illustrates the flow chart according to the method for the processing photovoltaic devices of one embodiment of the invention;
Fig. 2 A to Fig. 2 F then illustrates schematic diagram or the profile of photovoltaic devices of each step of corresponding diagram 1 respectively;
Fig. 3 illustrates the flow chart according to the method for the processing photovoltaic devices of another embodiment of the present invention;
Fig. 4 A to Fig. 4 I then illustrates schematic diagram or the profile of photovoltaic devices of the key step of corresponding diagram 3 respectively;
Fig. 5 illustrates the flow chart according to the method for the processing photovoltaic devices of another embodiment of the present invention;
Fig. 6 illustrates the vertical view of the photovoltaic devices that the method for corresponding diagram 5 produces.
[primary clustering symbol description]
100: photovoltaic devices 101a: the photovoltaic devices front
101b: the photovoltaic devices back side 102: substrate
106: the second electrode lay 108: coat of colo(u)r
109: pattern 110: zone
112: shade
S10～S14: process step S20～S28: process step
S30～S39: process step
Embodiment
Please in the lump referring to Fig. 1 and Fig. 2 A to Fig. 2 F, Fig. 1 illustrates the flow chart according to the method for the processing photovoltaic devices of one embodiment of the invention; Fig. 2 A to Fig. 2 F then illustrates schematic diagram and the profile of photovoltaic devices of each step of corresponding diagram 1, wherein the profile distinctly drawn for the O-O line in Fig. 2 A, Fig. 2 C and Fig. 2 E of Fig. 2 B, Fig. 2 D and Fig. 2 F.
As shown in Figure 1, in step S10, method of the present invention at first prepares the photovoltaic devices 100 that illustrates as Fig. 2 A and Fig. 2 B.Photovoltaic devices 100 comprises substrate 102, first electrode layer 103, opto-electronic conversion structure 104 and the second electrode lay 106.Wherein, can be positive 101a in the delimited of substrate 102 sides with photovoltaic devices 100, and be back side 101b with the delimited of the second electrode lay 106 sides.
Then in step S12, coat of colo(u)r 108 (shown in Fig. 2 C and Fig. 2 D) on the second electrode lay 106 is set.Note that Fig. 2 C is depicted as the back side 101b of photovoltaic devices 100.In present embodiment, coat of colo(u)r 108 presents the pattern 109 that has comprised mountain and the sun.Yet in practical application, coat of colo(u)r 108 can present any suitable pattern, and the color of pattern, shape, size etc. all can be adjusted according to circumstances.In practice, can by, such as (but being not limited to) UV-lithographic printing, screen painting, ink jet printing or scraper modes such as (Doctor blade) coat of colo(u)r 108 is set.
Then, in step S14, remove part coat of colo(u)r 108, part the second electrode lay 106 and part opto-electronic conversion structure 104 in the zone 110 of photovoltaic devices 100, cause the light transmittance in zone 110 greater than the original light transmittance (shown in Fig. 2 E and Fig. 2 F) of photovoltaic devices 100.In practical application, coat of colo(u)r 108, the second electrode lay 106 and opto-electronic conversion structure 104 can have identical Bei Yi Chu District territory 110.
In present embodiment, the zone 110 that is removed comprises a plurality of lines that are removed, and in practical application, this zone 110 can be any pattern and shape, as circular, square, lines, polygon, irregular shape, but is not limited thereto.In practice, the character of the lines that controllable areas 110 comprises is such as width, quantity etc.In addition, can remove step by various processing procedures, such as (but being not limited to) laser processing, lithography, chemical etching or wet etch process.
Shown in Fig. 2 E and Fig. 2 F, comprise substrate 102, be formed at first electrode layer 103 on the substrate 102, be formed at opto-electronic conversion structure 104 on first electrode layer 103, be formed at the second electrode lay 106 on the opto-electronic conversion structure 104 and be arranged at coat of colo(u)r 108 on the second electrode lay 106 according to the formed photovoltaic devices 100 of the method for present embodiment, wherein coat of colo(u)r 108 presents pattern 109.In addition, the coat of colo(u)r 108 in the zone 110 of photovoltaic devices 100, the second electrode lay 106 and part opto-electronic conversion structure 104 are removed, and cause the light transmittance in zone 110 greater than the original light transmittance of photovoltaic devices 100.Therefore the back side 101b by photovoltaic devices 100 sees it, will present the pattern 109 with integral perspective effect, and wherein mountain, sky and sun part all have transparent effect.In the present embodiment, because the second electrode lay 106 is opaque electrode, so the positive 101a of photovoltaic devices 100 sees it, though transparent effect is arranged, can't see color and the pattern 109 of coat of colo(u)r 108.Back side 101b by photovoltaic devices 100 sees it, because the light transmittance in zone 110 is greater than the original light transmittance of photovoltaic devices 100, make the back side 101b of photovoltaic devices 100 will present the image with part transparent effect, namely, the first half of back side 101b (sky in the pattern 109 and the sun) has transparent effect, Lower Half (mountain in the pattern 109) does not then have transparent effect, and forms the pattern 109 that partly has transparent effect, partly do not have transparent effect.Thereby realize a kind of effect with part perspective, and the back side presents the photovoltaic devices of preset pattern.
According to photovoltaic devices of the present invention, substrate 102 has pliability, for example polyimide film, aluminium foil, sheet metal etc.First electrode layer 103 can be by transparent conductive oxide (Transparent conducting oxide; TCO) make, and be coated on the substrate 102, the second electrode lay 106 is opaque electrode.In addition, opto-electronic conversion structure 104 can be formed by polysilicon, amorphous silicon, microcrystal silicon or other suitable material, and can convert electric energy to seeing through the light that substrate 102 and first electrode layer 103 receive, again with electric current by the second electrode lay 106 outputs.And possessing under the situation of photoelectric converting function, can select the material of substrate 102, first electrode layer 103, opto-electronic conversion structure 104, the second electrode lay 106 and coat of colo(u)r 108 etc., to adjust the light transmittance of photovoltaic devices 100.
Then please in the lump referring to Fig. 3 and Fig. 4 A to Fig. 4 I, Fig. 3 illustrates the flow chart according to the method for the processing photovoltaic devices of another embodiment of the present invention; Fig. 4 A to Fig. 4 I then illustrates schematic diagram and the profile of photovoltaic devices of the key step of corresponding diagram 3, wherein the profile distinctly drawn for the O-O line in Fig. 4 A, Fig. 4 C, Fig. 4 E and Fig. 4 G of Fig. 4 D, Fig. 4 F and Fig. 4 H.
As shown in Figure 3, the photovoltaic devices 100 that illustrates as Fig. 2 A and Fig. 2 B prior to step S20 preparation of the method for present embodiment.Carry out P2 line processing procedure and P3 line processing procedure in the photovoltaic devices 100 of step S20, divide processing procedure by said units photovoltaic devices 100 is divided into a plurality of unit, illustrate as Fig. 4 A and Fig. 4 B.P2 line processing procedure and P3 line processing procedure can be known the knowledgeable usually by having in field of the present invention, use various technology (for example, laser setting-out (1aser scribing) processing procedure) to carry out, so do not give unnecessary details at this.
Subsequently, in step S22, coat of colo(u)r 108 is set on the second electrode lay 106, coat of colo(u)r 108 can present the pattern of stating 109 shown in Fig. 2 C and Fig. 2 D.Because the second electrode lay 106 is opaque electrode, therefore the positive 101a by photovoltaic devices 100 sees it, can't see color and the pattern 109 of coat of colo(u)r 108.Then, in step S24, shade 112 is set in the positive 101a of substrate 102, shown in Fig. 4 C and Fig. 4 D, with the zone 110 of defining photovoltaic devices 100, this shade 112 comprises design identical on a part and the pattern of this coat of colo(u)r 108, in present embodiment, shade 112 is to design according to pattern 109, particularly, the profile of the shade 112 of present embodiment is identical with the mountain in the pattern 109, and the sky in the pattern 109 and the sun are not then covered by shade 112.In addition, in the present embodiment, the mode that shade 112 is set can comprise UV printing, screen painting or ink jet printing, and the one patterned shade 112 that will have metal or a plastic cement is arranged on the substrate 102.In other embodiment, this shade 112 can be identical with the pattern of this coat of colo(u)r 108 or part is identical.
Subsequently, in step S26, see through shade 112, with energy beam (for example, but be not limited to laser, electron beam etc.) remove part coat of colo(u)r 108, part the second electrode lay 106 and part opto-electronic conversion structure 104 in the zone 110 of the photovoltaic devices 100 that part do not cover by shade 112, shown in Fig. 4 E and Fig. 4 F, be removed the light transmittance in zone 110 greater than the original light transmittance of photovoltaic devices 100.In present embodiment, can adjust the focus of laser, it is passed and do not remove substrate 102 and first electrode layer 103 of zone in 110, and directly focus on opto-electronic conversion structure 104, the second electrode lay 106 and coat of colo(u)r 108, remove opto-electronic conversion structure 104, the second electrode lay 106 and coat of colo(u)r 108 with part.
At last, remove shade 112 in step S28, finish the processing of photovoltaic devices 100.The photovoltaic devices 100 that the method for present embodiment produces is shown in Fig. 4 G, Fig. 4 H and Fig. 4 I, and wherein Fig. 4 G is the upward view of photovoltaic devices 100, and Fig. 4 I is the vertical view of photovoltaic devices 100.Shown in Fig. 4 I, because zone 110 only is positioned at sky and the sun place of corresponding pattern 109, so the positive 101a of photovoltaic devices 100 is identical with back side 101b, only in zone 110, produce transparent effect, because the second electrode lay 106 is the opaque electrode layer, therefore though be can't see color and the pattern 109 of coat of colo(u)r 108 by positive 101a, still have the zone of not having a transparent effect on the mountain of corresponding pattern because of the cause of shade 112 profiles.
In other embodiment, shade 112 can not design according to pattern 109 yet, and designs according to the mode that other is desired.In addition, in other embodiment, graded arranges shade 112 in the diverse location place of photovoltaic devices 100, to carry out repeatedly the step that removes of different depth, make the diverse location place of photovoltaic devices 100 that different light transmittances be arranged, produce as gradually layer or other translucent effect of desiring.
Shown in Fig. 4 A and Fig. 4 B, the P2 line in the present embodiment is resulted from photovoltaic devices 100 integral body with the P3 line.Yet, in another embodiment, also can arrange shade 112 on substrate 102 with delimited area 110 after, just photovoltaic devices 100 is carried out P2 line processing procedure and the P3 processing procedure of ruling.
See also Fig. 5 and Fig. 6, Fig. 5 illustrates the flow chart according to the method for the processing photovoltaic devices of another embodiment of the present invention, and Fig. 6 then illustrates the vertical view of the photovoltaic devices 100 that the method for corresponding diagram 5 produces.As shown in Figure 5, the method for present embodiment comprises following Bu Sudden: step S30, preparation photovoltaic devices 100; Step S32 arranges shade in the positive 101a of photovoltaic devices, with the zone 110 of defining photovoltaic devices 100; Step S34 carries out P2 line processing procedure and P3 line processing procedure to photovoltaic devices 100, so that photovoltaic devices 100 is divided into a plurality of unit; Step S36 arranges coat of colo(u)r on the second electrode lay, and coat of colo(u)r can present the pattern shown in former figure; Step S38 sees through shade, removes part coat of colo(u)r, part the second electrode lay and part opto-electronic conversion structure in the zone 110 of photovoltaic devices 100 with energy beam, so that the light transmittance in zone 110 is greater than the original light transmittance of photovoltaic devices 100; And step S39, remove shade.Because the 112 pairs of processing procedures such as laser processing of shade that use can have barrier effect in this embodiment, so P2 line is divided into some unit with the part (being sky and the sun part in the pattern 109) that the P3 line only can not stopped by shade 112 at the first half of photovoltaic devices 100 with photovoltaic devices 100, then be not divided in the Lower Half (being the mountain part in the pattern 109) of photovoltaic devices 100.
In practical application, method of the present invention also can further comprise backboard applying step, namely, with backboard by conforming on the second electrode lay as materials such as synthesizing ethylene resins, be familiar with this skill person and ought see through the content of preamble description and the structure that annexed drawings is understood this step and produced, repeat no more in this.
In sum, photovoltaic devices processing method of the present invention can provide the photovoltaic devices of having integrated perspective fully or part transparent effect and colour image or vision design, so as to provide have the visual sense of beauty advantage and can be applicable to build or other appropriate device on photovoltaic devices.In addition, because the opto-electronic conversion structure that removes in the zone only partly removes, so remove the function that the zone still can have opto-electronic conversion.
Though the present invention discloses as above with execution mode; so it is not in order to limit the present invention; anyly be familiar with this skill person; without departing from the spirit and scope of the present invention; when can being used for a variety of modifications and variations, so protection scope of the present invention is as the criterion when looking the scope that appending claims defines.
Claims (10)
1. a method of handling a photovoltaic devices is characterized in that, comprises following steps:
Prepare this photovoltaic devices, it comprises a substrate, one first electrode layer, an opto-electronic conversion structure and a second electrode lay that forms in regular turn;
One coat of colo(u)r is set on this second electrode lay, this coat of colo(u)r presents a pattern; And
Remove this coat of colo(u)r of part, this second electrode lay of part and this opto-electronic conversion structure of part in the zone of this photovoltaic devices, cause this regional light transmittance greater than the original light transmittance of this photovoltaic devices.
2. method according to claim 1 is characterized in that, this coat of colo(u)r, this second electrode lay and this opto-electronic conversion structure have the identical zone that is removed.
3. method according to claim 1 is characterized in that, this removes step is to be undertaken by energy beam, lithography, chemical etching or Wet-type etching.
4. method according to claim 1 is characterized in that, after this photovoltaic devices of preparation and before this coat of colo(u)r is set, further comprises the dividing elements processing procedure.
5. method according to claim 1 is characterized in that, this removes step and further comprises following steps:
One shade is set on this substrate, to define this zone; And
See through this shade, remove this coat of colo(u)r of part, this second electrode lay of part and this opto-electronic conversion structure of part in this zone with an energy beam.
6. method according to claim 5 is characterized in that, after this shade step is set and in removing before the step that this energy beam carries out, further comprises the dividing elements processing procedure.
7. method according to claim 5 is characterized in that, this shade comprises the part design identical with the pattern of this coat of colo(u)r at least.
8. method according to claim 1 or 5 is characterized in that, this removes step further comprises a backboard applying step after finishing.
9. a photovoltaic devices is characterized in that, comprises:
One substrate;
One first electrode layer is formed on this substrate;
One opto-electronic conversion structure is formed on this first electrode layer;
One the second electrode lay is formed on this opto-electronic conversion structure; And
One coat of colo(u)r is arranged on this second electrode lay, and this coat of colo(u)r presents a pattern;
Wherein this coat of colo(u)r of part in the zone of this photovoltaic devices, this second electrode lay of part and this opto-electronic conversion structure of part are removed, and cause this regional light transmittance greater than the original light transmittance of this photovoltaic devices.
10. photovoltaic devices according to claim 9 is characterized in that, this coat of colo(u)r, this second electrode lay and this opto-electronic conversion structure have the identical zone that is removed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100425002A CN103258903A (en) | 2012-02-17 | 2012-02-17 | Method for processing photovoltaic device and photovoltaic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100425002A CN103258903A (en) | 2012-02-17 | 2012-02-17 | Method for processing photovoltaic device and photovoltaic device |
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| Publication Number | Publication Date |
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| CN103258903A true CN103258903A (en) | 2013-08-21 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2012100425002A Pending CN103258903A (en) | 2012-02-17 | 2012-02-17 | Method for processing photovoltaic device and photovoltaic device |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4795500A (en) * | 1985-07-02 | 1989-01-03 | Sanyo Electric Co., Ltd. | Photovoltaic device |
| CN102231409A (en) * | 2011-07-07 | 2011-11-02 | 山东力诺太阳能电力股份有限公司 | Manufacturing method of solar cell sheet with color patterns |
| CN102237441A (en) * | 2010-12-22 | 2011-11-09 | 保定天威集团有限公司 | Method for realizing light transmission of thin film solar module by using vibrating mirror laser equipment |
-
2012
- 2012-02-17 CN CN2012100425002A patent/CN103258903A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4795500A (en) * | 1985-07-02 | 1989-01-03 | Sanyo Electric Co., Ltd. | Photovoltaic device |
| CN102237441A (en) * | 2010-12-22 | 2011-11-09 | 保定天威集团有限公司 | Method for realizing light transmission of thin film solar module by using vibrating mirror laser equipment |
| CN102231409A (en) * | 2011-07-07 | 2011-11-02 | 山东力诺太阳能电力股份有限公司 | Manufacturing method of solar cell sheet with color patterns |
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Application publication date: 20130821 |