CN103255380A - Plasma treatment method of surface of metal conductor - Google Patents
Plasma treatment method of surface of metal conductor Download PDFInfo
- Publication number
- CN103255380A CN103255380A CN2013101352751A CN201310135275A CN103255380A CN 103255380 A CN103255380 A CN 103255380A CN 2013101352751 A CN2013101352751 A CN 2013101352751A CN 201310135275 A CN201310135275 A CN 201310135275A CN 103255380 A CN103255380 A CN 103255380A
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- China
- Prior art keywords
- target
- plain conductor
- metal conductor
- plasma treatment
- guide roller
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004020 conductor Substances 0.000 title claims abstract description 68
- 238000000034 method Methods 0.000 title claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 16
- 239000002184 metal Substances 0.000 title claims abstract description 16
- 238000009832 plasma treatment Methods 0.000 title claims abstract description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000007789 gas Substances 0.000 claims abstract description 29
- 229910052786 argon Inorganic materials 0.000 claims abstract description 15
- 239000011248 coating agent Substances 0.000 claims abstract description 10
- 238000000576 coating method Methods 0.000 claims abstract description 10
- 230000000694 effects Effects 0.000 claims abstract description 9
- 230000005684 electric field Effects 0.000 claims abstract description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000001257 hydrogen Substances 0.000 claims abstract description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 5
- 239000001301 oxygen Substances 0.000 claims abstract description 5
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 5
- 230000008569 process Effects 0.000 claims description 15
- 239000000376 reactant Substances 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 239000012159 carrier gas Substances 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 230000011218 segmentation Effects 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract description 2
- 210000002381 plasma Anatomy 0.000 abstract 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 230000001427 coherent effect Effects 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
- 230000003628 erosive effect Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000004568 cement Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000007634 remodeling Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
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Abstract
The invention provides a plasma treatment method of the surface of a metal conductor. The method comprises the following steps: first, prefabricating a target; second, assembling; third, electrifying; and fourth, reacting. The target is made cylindrical, and the cylindrical target is equivalent to a hollow cathode. Argon is ionized under the effect of a cylindrical target electric field to bombard the inner surface of the target. Metals bombarded form the plasmas, and reaction gases introduced (such as oxygen, hydrogen and argon) further form the plasmas. The plasmas are jointly deposited on the surface of the metal conductor under attraction of negative potential of the metal conductor, so that a coating is formed. The metal conductor passes through the cylindrical target continuously under traction of a lead rail, so that the coating is uniformly formed on the surface of the metal conductor, thereby improving the physical and chemical properties of the surface of the metal conductor. The target is reasonable in structure, and the steps are coherent and concise and easy to operate, so that the production cost is effectively lowered, and the production efficiency is improved.
Description
Technical field
The present invention relates to a kind of plain conductor surface treatment method, specifically refer to the plasma processing method on a kind of plain conductor surface.
Background technology
It is a kind of method of raising metallic surface character commonly used that the metal surface plasma body is handled, such as performances such as the hardness that changes the metallic surface, wear resistance, erosion resistance, electron emission.Cement Composite Treated by Plasma is generally carried out in a vacuum, but vacuum apparatus is generally less, and plain conductor is elongated, because structure is special, is difficult to carry out surface treatment with plasma body.If the enough Cement Composite Treated by Plasma plain conductors of energy under the prerequisite that ensures the plain conductor conductivity, improve performances such as its hardness, wear resistance, erosion resistance, electron emission, have great importance.
Summary of the invention
Deficiency at the prior art existence, technical problem to be solved by this invention is, by used accessory in the redesign treating processes, and in conjunction with the improvement for the treatment of process, thereby realize utilizing plasma body that the plain conductor surface is handled easily, thereby improve the over-all properties of plain conductor.
For solving the problems of the technologies described above, the technical solution adopted in the present invention is, a kind of plain conductor surface plasma treatment process is provided, and comprises the steps:
The first step, prefabricated target:
Target is made cylindric, drum diameter is 30-8cm, and the length of cylinder is made or segmentation as required;
Second step, assembling:
Plain conductor is passed and do not contact with target from the centre of target, and Wire guide roller is positioned at the both sides of target, and target is placed in the vacuum chamber, and target and Wire guide roller all insulate with vacuum chamber;
In the 3rd step, power on:
Feed argon gas as carrier gas, target is made as negative potential, and voltage is-1000～-2800V; Make the plain conductor of continuous movement keep negative potential by adjusting Wire guide roller, voltage is-100～-500V;
The 4th step, reaction:
Feed reactant gases, the ionization under cylinder metal effect of electric field of reactant gases and argon gas forms the coating uniform deposition on the plain conductor surface.
Above-mentioned plain conductor surface plasma treatment process, the first step, prefabricated target, target are by a kind of the making in the following metallic substance: copper, iron, nickel, tungsten, molybdenum, titanium, copper.
Above-mentioned plain conductor surface plasma treatment process, in second step, assembling arranges the plain conductor positioning seat on the both sides of target, and plain conductor is stretching, makes plain conductor be in the center of target, and does not contact with target.
Above-mentioned plain conductor surface plasma treatment process, the 4th step, reaction, the reactant gases of feeding is a kind of in oxygen, hydrogen, the nitrogen.
The present invention has following advantage and useful technique effect:
The present invention makes target cylindric, cylindric target is equivalent to hollow cathode, argon gas ionization under cylindric target effect of electric field, bombardment target internal surface, the metal that pounds forms plasma body, the reactant gases (oxygen, hydrogen, nitrogen etc.) that feeds also forms plasma body, under the attraction of plain conductor negative potential, be deposited on the plain conductor surface jointly, form coating, plain conductor constantly passes through cylindric target under the traction of Wire guide roller, thereby be formed uniformly coating on the plain conductor surface, improve the physico-chemical property on plain conductor surface.
Target project organization of the present invention is reasonable, and step links up succinct, and operation effectively reduces production costs easily, enhances productivity.
Description of drawings
Fig. 1 is target material structure synoptic diagram of the present invention;
Among the above-mentioned figure:
The 1-target, the 2-lead.
Embodiment
A kind of plain conductor surface plasma treatment process comprises the steps:
The first step, prefabricated target:
Target is made of copper cylindric, drum diameter is 30cm, and the length of cylinder is made or segmentation as required;
Second step, assembling:
Plain conductor is passed and do not contact with target from the centre of target, and Wire guide roller is positioned at the both sides of target, and target is placed in the vacuum chamber, and target and Wire guide roller all insulate with vacuum chamber;
On the both sides of target the plain conductor positioning seat is set, plain conductor is stretching, make plain conductor be in the center of target, and do not contact with target.
In the 3rd step, power on:
Feed argon gas as carrier gas, target is made as negative potential, and voltage is-2800V; Make the plain conductor of continuous movement keep negative potential by adjusting Wire guide roller, voltage is-500V;
The 4th step, reaction:
Feed reactant gases oxygen, the ionization under cylinder metal effect of electric field of reactant gases and argon gas forms the coating uniform deposition on the plain conductor surface.
The product performance index of present embodiment such as following table:
Hardness improves 55%, and wear resistance improves 70%, and erosion resistance improves 100%.
A kind of plain conductor surface plasma treatment process comprises the steps:
The first step, prefabricated target:
It is cylindric to adopt iron to make target, and drum diameter is 8cm, and the length of cylinder is made or segmentation as required;
Second step, assembling:
Plain conductor is passed and do not contact with target from the centre of target, and Wire guide roller is positioned at the both sides of target, and target is placed in the vacuum chamber, and target and Wire guide roller all insulate with vacuum chamber;
On the both sides of target the plain conductor positioning seat is set, plain conductor is stretching, make plain conductor be in the center of target, and do not contact with target.
In the 3rd step, power on:
Feed argon gas as carrier gas, target is made as negative potential, and voltage is-1000V; Make the plain conductor of continuous movement keep negative potential by adjusting Wire guide roller, voltage is-100V;
The 4th step, reaction:
Feed reactant gases hydrogen, the ionization under cylinder metal effect of electric field of reactant gases and argon gas forms the coating uniform deposition on the plain conductor surface.
The product performance index of present embodiment such as following table:
Hardness improves 65%, and wear resistance improves 100%.
Embodiment 3
A kind of plain conductor surface plasma treatment process comprises the steps:
The first step, prefabricated target:
It is cylindric to adopt nickel to make target, and drum diameter is 19cm, and the length of cylinder is made or segmentation as required;
Second step, assembling:
Plain conductor is passed and do not contact with target from the centre of target, and Wire guide roller is positioned at the both sides of target, and target is placed in the vacuum chamber, and target and Wire guide roller all insulate with vacuum chamber;
On the both sides of target the plain conductor positioning seat is set, plain conductor is stretching, make plain conductor be in the center of target, and do not contact with target.
In the 3rd step, power on:
Feed argon gas as carrier gas, target is made as negative potential, and voltage is-1900V; Make the plain conductor of continuous movement keep negative potential by adjusting Wire guide roller, voltage is-300V;
The 4th step, reaction:
Feed reactant gases nitrogen, the ionization under cylinder metal effect of electric field of reactant gases and argon gas forms the coating uniform deposition on the plain conductor surface.
The product performance index of present embodiment such as following table:
Hardness improves 70%, and wear resistance improves 50%, and erosion resistance improves 150%.
Embodiment 4
A kind of plain conductor surface plasma treatment process comprises the steps:
The first step, prefabricated target:
It is cylindric to adopt in tungsten, molybdenum, the titanium one or more to make target, and drum diameter is 25cm, and the length of cylinder is made or segmentation as required;
Second step, assembling:
Plain conductor is passed and do not contact with target from the centre of target, and Wire guide roller is positioned at the both sides of target, and target is placed in the vacuum chamber, and target and Wire guide roller all insulate with vacuum chamber;
On the both sides of target the plain conductor positioning seat is set, plain conductor is stretching, make plain conductor be in the center of target, and do not contact with target.
In the 3rd step, power on:
Feed argon gas as carrier gas, target is made as negative potential, and voltage is-2400V; Make the plain conductor of continuous movement keep negative potential by adjusting Wire guide roller, voltage is-400V;
The 4th step, reaction:
Feed reactant gases nitrogen, the ionization under cylinder metal effect of electric field of reactant gases and argon gas forms the coating uniform deposition on the plain conductor surface.
The above only is to preferred embodiment of the present invention, is not to be that the present invention is done other forms of restriction, and any those skilled in the art may utilize the technology contents of above-mentioned announcement to be changed or be modified as the equivalent embodiment of equivalent variations.But every the present invention program's content that do not break away to any simple modification, equivalent variations and remodeling that above embodiment does, still belongs to protection scope of the present invention according to technical spirit of the present invention.
Claims (4)
1. a plain conductor surface plasma treatment process is characterized in that, comprises the steps:
The first step, prefabricated target:
Target is made cylindric, drum diameter is 30-8cm, and the length of cylinder is made or segmentation as required;
Second step, assembling:
Plain conductor is passed and do not contact with target from the centre of target, and Wire guide roller is positioned at the both sides of target, and target is placed in the vacuum chamber, and target and Wire guide roller all insulate with vacuum chamber;
In the 3rd step, power on:
Feed argon gas as carrier gas, target is made as negative potential, and voltage is-1000 ~-2800V; Make the plain conductor of continuous movement keep negative potential by adjusting Wire guide roller, voltage is-100 ~-500V;
The 4th step, reaction:
Feed reactant gases, the ionization under cylinder metal effect of electric field of reactant gases and argon gas forms the coating uniform deposition on the plain conductor surface.
2. plain conductor surface plasma treatment process according to claim 1 is characterized in that: the first step, prefabricated target, target are by a kind of the making in the following metallic substance: copper, iron, nickel, tungsten, molybdenum, titanium.
3. plain conductor surface plasma treatment process according to claim 1 is characterized in that: second step, assembling, on the both sides of target the plain conductor positioning seat is set, plain conductor is stretching, make plain conductor be in the center of target, and do not contact with target.
4. plain conductor surface plasma treatment process according to claim 1 is characterized in that: the 4th step, and reaction, the reactant gases of feeding is a kind of in oxygen, hydrogen, the nitrogen.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310135275.1A CN103255380B (en) | 2013-04-18 | 2013-04-18 | A kind of Plasma treatment method of surface of metal conductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310135275.1A CN103255380B (en) | 2013-04-18 | 2013-04-18 | A kind of Plasma treatment method of surface of metal conductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103255380A true CN103255380A (en) | 2013-08-21 |
| CN103255380B CN103255380B (en) | 2015-12-02 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310135275.1A Expired - Fee Related CN103255380B (en) | 2013-04-18 | 2013-04-18 | A kind of Plasma treatment method of surface of metal conductor |
Country Status (1)
| Country | Link |
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| CN (1) | CN103255380B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1043961A (en) * | 1989-08-21 | 1990-07-18 | 机械电子工业部北京机械工业自动化研究所 | Magnetic control arc ion plating method |
| JPH03100175A (en) * | 1989-09-13 | 1991-04-25 | Seiko Instr Inc | Thin film forming device |
| CN101698934A (en) * | 2009-10-23 | 2010-04-28 | 武汉大学 | Hollow cathode electric arc ion coating plating system |
-
2013
- 2013-04-18 CN CN201310135275.1A patent/CN103255380B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1043961A (en) * | 1989-08-21 | 1990-07-18 | 机械电子工业部北京机械工业自动化研究所 | Magnetic control arc ion plating method |
| JPH03100175A (en) * | 1989-09-13 | 1991-04-25 | Seiko Instr Inc | Thin film forming device |
| CN101698934A (en) * | 2009-10-23 | 2010-04-28 | 武汉大学 | Hollow cathode electric arc ion coating plating system |
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| CN103255380B (en) | 2015-12-02 |
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| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
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Granted publication date: 20151202 Termination date: 20160418 |