CN103247606B - High-inductance-value silica-based planar spiral inductor structure - Google Patents
High-inductance-value silica-based planar spiral inductor structure Download PDFInfo
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- CN103247606B CN103247606B CN201310130229.2A CN201310130229A CN103247606B CN 103247606 B CN103247606 B CN 103247606B CN 201310130229 A CN201310130229 A CN 201310130229A CN 103247606 B CN103247606 B CN 103247606B
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Abstract
The invention relates to a high-inductance-value silica-based planar spiral inductor structure, and belongs to the technical field of semiconductor encapsulation. The structure comprises a planar spiral inductor (100) and a thin film silicon cap (200); a dielectric layer I (104), a magnetic film layer I (103), a passivation layer (102) and a silicon substrate (101) are sequentially arranged under an inductance coil (105a); a thin film silicon cap (200) provided with a magnetic film layer II (202) is covered on the planar spiral inductor (100) and connected with the planar spiral inductor (100) through an adhesive; and the magnetic film layer I (103) and/or the magnetic film layer II (202) consist(s) of a plurality of magnetic film bars perpendicular to the inductance coil. According to the invention, the magnetic film layer I, the magnetic film layer II and the adhesive form a complete magnetic return path from the center of the inductance coil to the outside, the design which is capable of reducing eddy current loss can obviously improve the inductance value, and a wafer level mode implementation process is adopted to allow the size of the planar spiral inductor to be smaller and the manufacturing cost to be lower.
Description
Technical field
The present invention relates to a kind of high inductance value silicon-base plane spiral inductance structure, belong to technical field of semiconductor encapsulation.
Background technology
Inductance is passive device very common in Circuits System, can play the effects such as filtering, chokes and storage power.In power device such as DC-to-DC converter (DC-DC Convertor), inductance plays the effect of storage power.The size of inductance storage power is directly proportional to its inductance value, and in order to meet the performance requirement of power system, the inductance value of this power inductance is all larger.The element pasted on surface that current this power inductance is normally separated, but this inductance volume is large, and cost is high.And the planar spiral inductor that small volume, manufacturing cost are relatively cheap, its inductance value is less, limits its scope of application in Circuits System.
Summary of the invention
From the above, the object of the invention is to the deficiency overcoming above-mentioned planar spiral inductor inductance value aspect, the high inductance value silicon-base plane spiral inductance structure that a kind of size of inductance is less, manufacturing cost is lower is provided.
the object of the present invention is achieved like this:
A kind of high inductance value silicon-base plane spiral inductance structure, comprise silicon-base plane spiral inductance, described silicon-base plane spiral inductance comprises silicon substrate, planar spiral inductor coil, described silicon substrate covers passivation layer, described planar spiral inductor coil comprises inductance coil and is arranged on the terminal at inductance coil two ends, on described passivation layer, laminated magnetic film I is set below inductance coil, described laminated magnetic film I extending around direction along inductance coil, described laminated magnetic film I arranges dielectric layer I, described inductance coil is arranged on dielectric layer I, the width of described dielectric layer I is not more than the width of laminated magnetic film I, the both sides of described dielectric layer I or the two ends of laminated magnetic film I arrange adhesive,
Also comprise thin film silicon cap, described thin film silicon cap comprises silicon cap and is arranged on the laminated magnetic film II of silicon cap inwall and external margin, described silicon cap is the die cavity of indent, described thin film silicon cap tips upside down on silicon-base plane spiral inductance, described inductance coil is buckled in silicon cap, laminated magnetic film II on thin film silicon cap is connected with the laminated magnetic film I of silicon-base plane spiral inductance by adhesive, and described terminal exposes thin film silicon cap, and is connected to external circuit by the mode of wire bonding.
Alternatively, described laminated magnetic film I and/or laminated magnetic film II are made up of several magnetic thin film bars, and described magnetic thin film bar is vertical with the trend of inductance coil.
Alternatively, also comprise dielectric layer II, described dielectric layer II is arranged between silicon cap and laminated magnetic film II.
Alternatively, described silicon cap is the absolute construction of integrally formed structure or separation.
Alternatively, described terminal place arranges pad, and described pad is arranged on passivation layer or dielectric layer I.
Alternatively, protective mulch on described inductance coil, described protective layer is single or multiple lift.
Also comprise the lower logical lead-in wire of band shape and be arranged on the salient point of silicon-base plane spiral inductance corner, described salient point comprises salient point I and salient point II, described lower logical lead-in wire is arranged over the passivation layer, described lower logical lead-in wire is arranged again passivation layer and passivation layer opening again, the partial fixing of described inductance coil is on passivation layer again, described salient point I is fixed on one end of lower logical lead-in wire by being arranged on again metal under the salient point in passivation layer opening, described terminal is fixed on the other end of lower logical lead-in wire by passivation layer opening again, the height of described salient point I and salient point II is all higher than the upper surface of thin film silicon cap, under described salient point, metal is circular, quadrangle, hexagon or octagon.
Alternatively, described salient point I and salient point II are soldered balls.
Alternatively, described salient point I and salient point II comprise the soldered ball on metal column and metal column.
Alternatively, described lower logical lead-in wire is single or multiple lift metal wiring layer.
the invention has the beneficial effects as follows:
1,the present invention by preparing laminated magnetic film I below silicon-base plane Meander line inductor, and back-off is provided with the thin film silicon cap of laminated magnetic film II thereon, connect laminated magnetic film I by being with magnetic bonding agent and form closed magnetic circuit, within the cycle of inductance coil, form the flux path structure of high-permeability material, thus effectively improve the inductance value of silicon-base plane spiral inductance.When guaranteeing that magnetic circuit is complete, this laminated magnetic film I and/or laminated magnetic film II are designed to respectively by the magnetic thin film bar of several vertical inductance coils, the eddy current loss of silicon-base plane spiral inductance can be reduced, to promote the inductance value of spiral inductance further;
2, the dielectric layer I arranged between inductance coil and laminated magnetic film I, the width of dielectric layer I is not more than the width of laminated magnetic film I, reduces the loss of system; The dielectric layer II increased between silicon cap and laminated magnetic film II, makes silicon cap and laminated magnetic film II insulation further, can reduce the loss of system equally, promotes the inductance value of spiral inductance;
3, the terminal place of the inductance coil of silicon-base plane spiral inductance can arrange pad, can be connected to external circuit by the mode of wire bonding;
Under the inductance coil of 4, silicon-base plane spiral inductance, lower logical lead-in wire is set, by this lower logical lead-in wire, the terminal being positioned at silicon-base plane spiral inductance inside is guided to the outside of silicon-base plane spiral inductance, and salient point I is set at the extended spot of the terminal of the inductance coil of silicon-base plane spiral inductance, by this salient point I, inductance back-off can be connected on outside line in follow-up use, and the balance after the salient point II that the nonfunctional that other positions are placed connects can keep this induction structure back-off.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the embodiment one of a kind of high inductance value silicon-base plane spiral inductance structure of the present invention;
Fig. 2 is the schematic diagram not arranging magnetic thin film silicon cap in Fig. 1;
Fig. 3 is the A-A cutaway view of Fig. 1;
Fig. 4 is another A-A cutaway view of Fig. 1;
Fig. 5 is the schematic diagram of a kind of high inductance value silicon-base plane spiral inductance constructive embodiment two of the present invention;
Fig. 6 is the B-B cutaway view of Fig. 5.
Wherein:
Silicon-base plane spiral inductance 100
Silicon substrate 101
Passivation layer 102
Laminated magnetic film I 103
Dielectric layer I 104
Planar spiral inductor coil 105
Inductance coil 105a
Terminal 105b
Ubm layer 105c
Logical lead-in wire 106 down
Passivation layer 107 again
Salient point I 108
Metal column 108a
Soldered ball 108b
Salient point II 109
Thin film silicon cap 200
Silicon cap 201
Laminated magnetic film II 202
Dielectric layer II 203
Adhesive 301.
Embodiment
See Fig. 1 and Fig. 2, a kind of high inductance value silicon-base plane spiral inductance structure of the present invention, comprises silicon-base plane spiral inductance 100 and thin film silicon cap 200.Described silicon-base plane spiral inductance 100 comprises silicon substrate 101, planar spiral inductor coil 105, deposit passivation layer 102 on described silicon substrate 101, this passivation layer 102 can for silicon dioxide, silicon nitride or other there is the coating of organic material of insulation characterisitic, and passivation layer 102 covers the upper surface of silicon substrate 101 completely.Described planar spiral inductor coil 105 comprises inductance coil 105a and is arranged on the terminal 105b at inductance coil 105a two ends.Inductance coil 105a is planar spiral structures, and helical structure can be rectangle, square, circular or other analogous shapes, and as ellipse, the number of turn of inductance coil 105a is greater than in 2, figure usually with the elliptical spiral induction structure example of 5 circles.
On passivation layer 102, below inductance coil 105a, laminated magnetic film I 103 is set, laminated magnetic film I 103 extending around direction along inductance coil 105a, this laminated magnetic film I 103 can be magnetic metal or alloy as N I, FeN I, FeCo etc., also may be the inorganic material such as ferrite.It is square that the shape of this laminated magnetic film I 103 is not restricted to illustrated discontinuous two block lengths, can be oval along the continuous print extended around direction of inductance coil 105a or oval local yet.
Laminated magnetic film I 103 is arranged dielectric layer I 104, dielectric layer I 104 arranges inductance coil 105a, dielectric layer I 104 makes inductance coil 105a and laminated magnetic film I 103 not conducting, and its shape is determined according to the placement location of laminated magnetic film I 103 and inductance coil 105a.The width of dielectric layer I 104 is not more than the width of laminated magnetic film I 103.When the width of dielectric layer I 104 is less than the width of laminated magnetic film I 103, on laminated magnetic film I 103, the both sides of dielectric layer I 104 arrange adhesive 301; When the width of dielectric layer I 104 is not less than the width of laminated magnetic film I 103, on passivation layer 102, the two ends of laminated magnetic film I 103 arrange adhesive 301.The terminal 105b place at inductance coil 105a two ends arranges and is used for carrying out interconnected pad with outside, and pad is arranged on passivation layer 102 or dielectric layer I 104, and the horizontal level of pad can be determined according to concrete design requirement.
Described thin film silicon cap 200 is placed on above-mentioned silicon-base plane spiral inductance 100 by back-off, exposes thin film silicon cap 200 for interconnected pad, and is connected to external circuit by the mode of wire bonding.As shown in the A-A cutaway view of Fig. 3, the silicon cap 201 of described thin film silicon cap 200 has several, and in recessed die cavity, and the shape of die cavity can be other shapes such as trapezoidal, rectangle, and inductance coil 105a is buckled in silicon cap 201.In the schematic diagram of this embodiment, two silicon caps 200 of thin film silicon cap 200 are integrally formed structures.In addition, thin film silicon cap 200 also can be the absolute construction that several silicon caps 201 are separated.Silicon cap 201 inwall and external margin are provided with laminated magnetic film II 202, can be magnetic metal or alloy as N I, FeN I, FeCo etc., also may be the inorganic material such as ferrite.Laminated magnetic film II 202 in thin film silicon cap 200 is connected with the same laminated magnetic film I 103 on silicon-base plane spiral inductance 100 by adhesive 301.Also can mictomagnetism material powder in adhesive 301, become Magnetic adhesive.In sum, in this embodiment, laminated magnetic film I 103, laminated magnetic film II 202 and adhesive 301 are all with and are magnetic, and define the complete magnetic loop from inductance coil 105a center to outside, thus can significantly improve its inductance value.Can when guaranteeing that magnetic circuit is complete in specific design, laminated magnetic film I 103 and/or laminated magnetic film II 202 are designed to be made up of several magnetic thin film bars respectively, magnetic thin film bar is vertical with the trend of inductance coil 105a, thus reduces the eddy current loss of silicon-base plane spiral inductance.
In the enforcement structure of reality, between silicon cap 201 and laminated magnetic film II 202, dielectric layer II 203 can also be increased, to guarantee that silicon cap 201 and laminated magnetic film II 202 insulate, the loss of system can be reduced equally, promote the inductance value of spiral inductance.As shown in Figure 4.
Figure 5 shows that the schematic diagram of another embodiment of the present invention structure, Fig. 6 is the cutaway view along B-B line in Fig. 5.Same as the previously described embodiments or similar feature is no longer repeated at this.Be different from previous embodiment, also comprise banded lower logical lead-in wire 106 and the salient point being arranged on silicon-base plane spiral inductance 100 4 jiaos in this embodiment, salient point comprises for carrying out the interconnected salient point of upside-down mounting I 108 and the salient point II 109 for balanced action with outside line.Salient point I 108 is not specifically limited with the horizontal level of salient point II 109.Logical lead-in wire 106 is arranged on passivation layer 102 down, is generally single metal layer or more metal layers.Described lower logical lead-in wire 106 is arranged again passivation layer 107 and passivation layer opening again, the part of inductance coil 105a is pressed on passivation layer 107 again, and this is the organic material that normally insulate of passivation layer 107 again, is positioned at same layer with dielectric layer I 104.Described salient point I 108 is fixed on one end of lower logical lead-in wire 106 by being arranged on metal 105c under the salient point in passivation layer opening, ubm layer 105c and lower logical lead-in wire 106 form ohmic contact again; Described terminal 105b is fixed on the other end of lower logical lead-in wire 106 by passivation layer opening again, and this lower logical lead-in wire 106 is through outside internal terminal 105b being guided to after below inductance coil 105a inductance coil 105a.The height of described salient point I 108 and salient point II 109 all higher than the upper surface of thin film silicon cap 200, to guarantee that when carrying out flip-chip interconnection salient point I 108 and external circuit pad 105b form limited electrical connection.This metal salient point I 108 and salient point II 109 can be all the composite constructions of solder ball 108b or metal column 108a and solder ball 108b.Under described salient point, metal 105c and metal column 108a is other polygons such as circle, quadrangle, hexagon, octagon, and usually, metal column 108a is copper post.
In the enforcement structure of reality, the inductance coil 105a of silicon-base plane spiral inductance 100 can also cover single or multiple lift organic protection layer (not shown), protect inductance coil 105a, thus avoid the corrosion and oxidation etc. of inductance coil 105a.Above flexible structure is all within the limited range of this patent.
The main technique of induction structure proposed by the invention all realizes in wafer scale mode, and therefore cost is lower, size can be less, and can also obtain accurate inductance coil 105a dimension of picture by the mode of photoetching and plating.
Claims (10)
1. one kind high inductance value silicon-base plane spiral inductance structure, comprise silicon-base plane spiral inductance (100), described silicon-base plane spiral inductance (100) comprises silicon substrate (101), planar spiral inductor coil (105), described silicon substrate (101) covers passivation layer (102), described planar spiral inductor coil (105) comprises inductance coil (105a) and is arranged on the terminal (105b) at inductance coil (105a) two ends
It is characterized in that: described passivation layer (102) is upper, inductance coil (105a) below arranges laminated magnetic film I (103), described laminated magnetic film I (103) extending around direction along inductance coil (105a),
Described laminated magnetic film I (103) arranges dielectric layer I (104), described inductance coil (105a) is arranged on dielectric layer I (104), the width of described dielectric layer I (104) is not more than the width of laminated magnetic film I (103), the both sides of described dielectric layer I (104) or the two ends of laminated magnetic film I (103) arrange adhesive (301)
Also comprise thin film silicon cap (200), described thin film silicon cap (200) comprises silicon cap (201) and is arranged on the laminated magnetic film II (202) of silicon cap (201) inwall and external margin, the die cavity of described silicon cap (201) in indent, described thin film silicon cap (200) tips upside down on silicon-base plane spiral inductance (100), described inductance coil (105a) is buckled in silicon cap (201), laminated magnetic film II (202) on thin film silicon cap (200) is connected with the laminated magnetic film I (103) of silicon-base plane spiral inductance (100) by adhesive (301), described terminal (105b) exposes thin film silicon cap (200), and be connected to external circuit by the mode of wire bonding.
2. planar spiral inductor structure as claimed in claim 1, it is characterized in that: described laminated magnetic film I (103) and/or laminated magnetic film II (202) are made up of several magnetic thin film bars, and described magnetic thin film bar is vertical with the trend of inductance coil (105a).
3. planar spiral inductor structure as claimed in claim 1, it is characterized in that: also comprise dielectric layer II (203), described dielectric layer II (203) is arranged between silicon cap (201) and laminated magnetic film II (202).
4. the planar spiral inductor structure as described in claim 1 or 3, is characterized in that: described silicon cap (201) is the absolute construction of integrally formed structure or separation.
5. planar spiral inductor structure as claimed in claim 1, it is characterized in that: described terminal (105b) place arranges pad, described pad is arranged on passivation layer (102) or dielectric layer I (104).
6. planar spiral inductor structure as claimed in claim 1, is characterized in that: the upper protective mulch of described inductance coil (105a), described protective layer is single or multiple lift.
7. the planar spiral inductor structure as described in claim 1 or 2 or 3, it is characterized in that: also comprise the lower logical lead-in wire (106) of band shape and be arranged on the salient point of silicon-base plane spiral inductance (100) corner, described salient point comprises salient point I (108) and salient point II (109), described lower logical lead-in wire (106) is arranged on passivation layer (102), described lower logical lead-in wire (106) is arranged again passivation layer (107) and passivation layer opening again, the partial fixing of described inductance coil (105a) is on passivation layer (107) again, described salient point I (108) is fixed on one end of lower logical lead-in wire (106) by being arranged on again metal (105c) under the salient point in passivation layer opening, described terminal (105b) is fixed on the other end of lower logical lead-in wire (106) by passivation layer opening again, the height of described salient point I (108) and salient point II (109) is all higher than the upper surface of thin film silicon cap (200), under described salient point, metal (105c) is circular, quadrangle, hexagon or octagon.
8. planar spiral inductor structure as claimed in claim 7, is characterized in that: described salient point I (108) and salient point II (109) are soldered ball (108b).
9. planar spiral inductor structure as claimed in claim 7, is characterized in that: described salient point I (108) and salient point II (109) comprise the soldered ball (108b) on metal column (108a) and metal column (108a).
10. planar spiral inductor structure as claimed in claim 7, is characterized in that: described lower logical lead-in wire (106) is single or multiple lift metal wiring layer.
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| CN201310130229.2A CN103247606B (en) | 2013-04-16 | 2013-04-16 | High-inductance-value silica-based planar spiral inductor structure |
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| CN201310130229.2A CN103247606B (en) | 2013-04-16 | 2013-04-16 | High-inductance-value silica-based planar spiral inductor structure |
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| CN103247606B true CN103247606B (en) | 2015-06-17 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103489852B (en) * | 2013-09-30 | 2016-01-27 | 江阴长电先进封装有限公司 | Packaging structure and packaging method of radio frequency inductor |
| US10622909B2 (en) * | 2017-01-12 | 2020-04-14 | Ford Global Technologies, Llc | Power module for inverter switching devices having gate coils shielded from eddy currents |
| CN112781482B (en) * | 2020-08-21 | 2022-10-14 | 哈尔滨工业大学（威海） | Method for measuring space curvature of deformable curved surface and method for manufacturing inductive space curvature measurement sensitive element |
| US20230187386A1 (en) * | 2021-12-14 | 2023-06-15 | Intel Corporation | Microelectronic assemblies with glass substrates and planar inductors |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101447275A (en) * | 2007-11-29 | 2009-06-03 | 台湾积体电路制造股份有限公司 | Spiral inductor structure, fabricating method and packing structure thereof |
| CN102779807A (en) * | 2012-01-16 | 2012-11-14 | 中国科学院上海微系统与信息技术研究所 | RDL (radiological defense laboratory) technology-compatible inductive component and manufacture method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6191468B1 (en) * | 1999-02-03 | 2001-02-20 | Micron Technology, Inc. | Inductor with magnetic material layers |
| US20060088971A1 (en) * | 2004-10-27 | 2006-04-27 | Crawford Ankur M | Integrated inductor and method of fabrication |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101447275A (en) * | 2007-11-29 | 2009-06-03 | 台湾积体电路制造股份有限公司 | Spiral inductor structure, fabricating method and packing structure thereof |
| CN102779807A (en) * | 2012-01-16 | 2012-11-14 | 中国科学院上海微系统与信息技术研究所 | RDL (radiological defense laboratory) technology-compatible inductive component and manufacture method |
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