CN103241706B - 应力匹配的双材料微悬臂梁的制造方法 - Google Patents
应力匹配的双材料微悬臂梁的制造方法 Download PDFInfo
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- CN103241706B CN103241706B CN201210024934.XA CN201210024934A CN103241706B CN 103241706 B CN103241706 B CN 103241706B CN 201210024934 A CN201210024934 A CN 201210024934A CN 103241706 B CN103241706 B CN 103241706B
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- 239000000463 material Substances 0.000 title claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 239000010408 film Substances 0.000 claims abstract description 84
- 238000000034 method Methods 0.000 claims abstract description 50
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 46
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 44
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 44
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 44
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 44
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 44
- 238000000151 deposition Methods 0.000 claims abstract description 19
- 230000008021 deposition Effects 0.000 claims abstract description 19
- 238000000137 annealing Methods 0.000 claims abstract description 17
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000002019 doping agent Substances 0.000 claims abstract description 7
- 239000010409 thin film Substances 0.000 claims abstract description 4
- 230000006835 compression Effects 0.000 claims description 22
- 238000007906 compression Methods 0.000 claims description 22
- 238000002513 implantation Methods 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- 239000007943 implant Substances 0.000 claims description 6
- 238000002347 injection Methods 0.000 claims description 4
- 239000007924 injection Substances 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 238000000354 decomposition reaction Methods 0.000 claims 1
- 238000005260 corrosion Methods 0.000 abstract description 3
- 230000009977 dual effect Effects 0.000 abstract 1
- XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin Chemical compound CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 abstract 1
- 238000005459 micromachining Methods 0.000 abstract 1
- 230000009466 transformation Effects 0.000 abstract 1
- 230000035882 stress Effects 0.000 description 61
- 238000005516 engineering process Methods 0.000 description 12
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 238000003475 lamination Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 241000894007 species Species 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 240000002853 Nelumbo nucifera Species 0.000 description 1
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 1
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000009429 distress Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
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- Chemical Vapour Deposition (AREA)
Abstract
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CN201210024934.XA CN103241706B (zh) | 2012-02-06 | 2012-02-06 | 应力匹配的双材料微悬臂梁的制造方法 |
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CN201210024934.XA CN103241706B (zh) | 2012-02-06 | 2012-02-06 | 应力匹配的双材料微悬臂梁的制造方法 |
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CN103241706A CN103241706A (zh) | 2013-08-14 |
CN103241706B true CN103241706B (zh) | 2016-05-18 |
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Families Citing this family (1)
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CN104760925B (zh) * | 2014-01-07 | 2016-05-25 | 无锡华润上华半导体有限公司 | 一种薄膜支撑梁的制作方法 |
Citations (7)
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US7249859B1 (en) * | 2003-12-18 | 2007-07-31 | United States Of America As Represented By The Secretary Of The Navy | Corner cube chemical-biological agent sensor |
CN101140185A (zh) * | 2006-09-06 | 2008-03-12 | 中国科学院微电子研究所 | 一种非制冷红外焦平面阵列探测器及其制作方法 |
CN101229911A (zh) * | 2007-01-24 | 2008-07-30 | 中国科学院微电子研究所 | 光-机械式双层结构非制冷红外成像焦平面阵列探测器 |
CN101566643A (zh) * | 2008-04-22 | 2009-10-28 | 中国计量学院 | 一种基于双材料微悬臂梁的薄膜热电变换器的结构及制作方法 |
EP2251681A1 (en) * | 2008-02-29 | 2010-11-17 | Sungkyunkwan University Foundation for Corporate Collaboration | Physical/biochemical sensor employing an array of piezoelectric micro-cantilever resonators of several sizes, and a production method therefor |
CN101995295A (zh) * | 2009-08-19 | 2011-03-30 | 北京大学 | 非制冷红外焦平面阵列及其制备方法与应用 |
CN102226776A (zh) * | 2011-03-30 | 2011-10-26 | 中国矿业大学 | 悬臂梁室温瓦斯传感器 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2005079208A2 (en) * | 2003-11-21 | 2005-09-01 | Trustees Of Boston University | Uncooled cantilever microbolometer focal plane array with mk temperature resolutions and method of manufacturing microcantilever |
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2012
- 2012-02-06 CN CN201210024934.XA patent/CN103241706B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7249859B1 (en) * | 2003-12-18 | 2007-07-31 | United States Of America As Represented By The Secretary Of The Navy | Corner cube chemical-biological agent sensor |
CN101140185A (zh) * | 2006-09-06 | 2008-03-12 | 中国科学院微电子研究所 | 一种非制冷红外焦平面阵列探测器及其制作方法 |
CN101229911A (zh) * | 2007-01-24 | 2008-07-30 | 中国科学院微电子研究所 | 光-机械式双层结构非制冷红外成像焦平面阵列探测器 |
EP2251681A1 (en) * | 2008-02-29 | 2010-11-17 | Sungkyunkwan University Foundation for Corporate Collaboration | Physical/biochemical sensor employing an array of piezoelectric micro-cantilever resonators of several sizes, and a production method therefor |
CN101566643A (zh) * | 2008-04-22 | 2009-10-28 | 中国计量学院 | 一种基于双材料微悬臂梁的薄膜热电变换器的结构及制作方法 |
CN101995295A (zh) * | 2009-08-19 | 2011-03-30 | 北京大学 | 非制冷红外焦平面阵列及其制备方法与应用 |
CN102226776A (zh) * | 2011-03-30 | 2011-10-26 | 中国矿业大学 | 悬臂梁室温瓦斯传感器 |
Non-Patent Citations (1)
Title |
---|
"Stress Variations in TEOS-Based Si02 Films During Ex-Situ Thermal Cycling";K. Ramkumar et al.;《J. Electrochem. Soc.》;19930930;第140卷(第9期);第2669页实验-第2670页第1段、第2672页结论部分,图1,表1 * |
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