CN103231825A - Nitrogen-filled packaging method of germanium substrate piece of solar battery - Google Patents
Nitrogen-filled packaging method of germanium substrate piece of solar battery Download PDFInfo
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- CN103231825A CN103231825A CN2013101794070A CN201310179407A CN103231825A CN 103231825 A CN103231825 A CN 103231825A CN 2013101794070 A CN2013101794070 A CN 2013101794070A CN 201310179407 A CN201310179407 A CN 201310179407A CN 103231825 A CN103231825 A CN 103231825A
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Abstract
The invention discloses a nitrogen-filled packaging method of a germanium substrate piece of a solar battery. The nitrogen-filled packaging method includes that aeration of nitrogen is performed after an inner bag is vacuumized, recycle is performed for four times, and pressure values for vacuumizing are sequentially minus 70 to minus 60 pa, minus 60 to minus 50 pa, minus 20 to minus 10 pa and minus 10 to minus 7 pa; the nitrogen in the inner bag is extruded, a bag opening is compacted and the temperature is increased to 90 to 100 DEG C at the same time, the bag opening is sealed, and the temperature of the bag opening is cooled to 30 to 40 DEG C after the sealing is achieved; the inner bag is rapidly placed inside an outer bag, aeration of nitrogen is performed after the outer bag is vacuumized, recycle is performed for four times, and pressure values for vacuumizing are sequentially minus 70 to minus 60 pa, minus 20 to minus 10 pa, minus 15 to minus 5 pa and minus 10 to minus 7 pa; and the nitrogen in the outer bag is extruded, a bag opening of the outer bag is compacted and the temperature is increased to 100 to 120 DEG C at the same time, the bag opening is sealed, and the temperature of the bag opening is cooled to 30 to 40 DEG C after the sealing is achieved. The nitrogen-filled packaging method of the germanium substrate piece of the solar battery employs vacuumizing and high purity nitrogen filled technologies and has the advantages of guaranteeing that the oxygen content in a bag is reduced to below 1.5%, being capable of effectively preventing surface oxidation of a germanium piece, maintaining the stable quality of an epitaxial surface of the germanium piece and extending the service life of the germanium substrate piece.
Description
Technical field
The present invention relates to a kind of packing method, be specifically related to a kind of packing method of solar cell germanium substrate.
Background technology
At present, the growth technology that is used for growth technology (MOCVD), LED wafer and the gallium arsenide semiconductor wafer of space space flight solar cell germanium all needs to use out the substrate slice that box is namely used (being Epi-ready), therefore, the surface quality that how to guarantee substrate slice is stable, prevent surface oxidation, become a very important problem service life of prolongation substrate slice.In the use field of solar germanium substrate, after germanium substrate carries out surface treatment through chemically mechanical polishing, the smooth surface cleaning, how to ensure that the germanium wafer surface nature is stable, not contaminated, avoid damage simultaneously, make it in epitaxial growth, to obtain good extension result, taking up of germanium wafer proposed new requirement.
Summary of the invention
Goal of the invention: the objective of the invention is at the deficiencies in the prior art, a kind of assurance germanium wafer surface-stable is provided, avoid the nitrogen-filled packaging method of the solar cell germanium substrate of oxidation.
Technical scheme: the invention provides a kind of nitrogen-filled packaging method of solar cell germanium substrate, may further comprise the steps:
(1) inner bag is vacuumized the back and feed nitrogen, circulate repeatedly 4 times, the force value that vacuumizes be followed successively by-70 ~-60 pa ,-60 ~-50pa ,-20 ~-10pa and-10 ~-7pa, in this step nitrogen constantly air that inner bag in the vacuum is residual discharge, the force value of 4 circulations can guarantee that the air in the bag drains, avoid packing into germanium wafer generation oxidation in the inner bag, simultaneously, the force value trend that tapers off, prevent the inner bag space that level of oxygen reduces gradually because the degree that vacuumizes is excessive, when charging into nitrogen, bring air again into;
(2) nitrogen in the inner bag is extruded, sack is warming up to 90 ℃ ~ 100 ℃, compress sack and carry out involution, after involution finishes the sack temperature is cooled to 30 ℃ ~ 40 ℃, guarantee the inside and outside airiness of blocking-up bag;
(3) inner bag is placed outer bag rapidly, outer bag is vacuumized back feeding nitrogen, circulate repeatedly 4 times, the force value that vacuumizes be followed successively by-70 ~-60 pa ,-20 ~-10pa ,-15 ~-5pa and-10 ~-7pa, nitrogen is constantly discharged the vacuum China and foreign countries residual air of bag in this step, the force value of 4 circulations can guarantee that the air in the bag drains, germanium wafer generation oxidation outside avoiding packing in the bag, simultaneously, the force value trend that tapers off, prevent that outer bag space that level of oxygen reduces gradually from because the degree that vacuumizes is excessive, bringing air again into when charging into nitrogen;
(4) nitrogen in the outer bag is extruded, the sack of outer bag compressed be warming up to 100 ℃ ~ 120 ℃ simultaneously, carry out the sack involution, after involution finishes the sack temperature is cooled to 30 ℃ ~ 40 ℃, break off communicating with outside air, further isolate the germanium wafer in the inner bag, the two-layer protection failure-free of interior Over-bag has guaranteed the stability on germanium wafer surface.
Preferably, described inner bag is Nylon Bag, the Nylon Bag smooth surface, packing the surface of germanium wafer of inner bag into can be by the inner bag scratch, and in addition, Nylon Bag is anti-gray effectively, avoid germanium wafer to pack into being infected with dust in the process of inner bag and bring in the bag, can keep the clean vacuum in inner space of inner bag; Described outer bag is aluminum foil bag, the aluminum foil bag material is harder, germanium wafer is played to a certain degree protective action, prevent that the germanium wafer surface from cracking and cracked, aluminum foil bag is opaque simultaneously, can stop extraneous light to the irradiation of germanium wafer, for keeping the stable environment that the cool place is provided of germanium wafer surface nature, the chemical constitution that prevents germanium wafer is destroyed, avoids oxidation, prolongs the pot-life.
For the level of oxygen in the inner bag is down to below 1.5%, the time that inner bag vacuumizes for four times in the step (1) amounts to 35.2s, and the nitrogen inflationtime amounts to 15.8s.
In order to reduce the remaining nitrogen in the inner bag as far as possible, be 0.5s with the nitrogen extrusion time in the inner bag in the step (2), might be stuck in and carry out involution again after nitrogen in the inner bag extrudes.
Time with the sack involution of inner bag in the step (2) is 3.0s, makes that sack is two-layer at high temperature can fully to melt bonding, and sack is bonding fully, guarantees to shut.
Time with the cooling of the sack of inner bag in the step (2) is 3.0s, provides one section hardening time to finalize the design to sack, prevents that the sack of shutting is out of shape under the effect of waste heat, causes sack gas leakage.
Following for level of oxygen 1.5% in the outer bag is down to, the time that step (3) China and foreign countries bag vacuumizes for four times amounts to 16.5s, and the nitrogen inflationtime amounts to 23s.
In order to reduce the remaining nitrogen in the outer bag as far as possible, the nitrogen extrusion time in will outer bag in the step (4) is 0.5s, might be stuck in to carry out involution again after nitrogen in the outer bag extrudes.
The time of sack involution that will outer bag in the step (4) is 3.0s, makes that sack is two-layer at high temperature can fully to melt bonding, and sack is bonding fully, guarantees to shut.
The time of the sack of bag cooling outward is 1.0s in the step (4), provides one section hardening time to finalize the design to sack, prevents that the sack of shutting is out of shape under the effect of waste heat, causes sack gas leakage.
Beneficial effect: 1, the present invention adopts and to vacuumize and fill the high pure nitrogen technology, extract the air in the packaging bag out recycling nitrogen earlier and catch up with most air, oxygen content in the assurance bag is down to below 1.5%, can effectively prevent the germanium wafer surface oxidation, keep germanium wafer epitaxial surface steady quality, prolong the service life of substrate slice; 2, technology of the package is simple, and inside and outside bag combines, the advantage of have resistance to compression, choke, guaranteeing the quality, effectively intercept outside air, light and pressure to the infringement of germanium wafer, germanium wafer can be preserved 3 months after packing by this, and surface cleaning degree and planeness do not have influence, and germanium wafer does not have fragment; 3, packing quantity can be adjusted, and satisfies different epitaxial furnace technological requirements, reaches out the i.e. purpose of usefulness of box.
The specific embodiment
Below technical solution of the present invention is elaborated, but protection scope of the present invention is not limited to described embodiment.
Embodiment:
Embodiment 1: the packaging scheme that cleans germanium wafer with 12 4 inch is example, and its nitrogen-filled packaging method may further comprise the steps:
(1) inner bag is vacuumized the back and feed nitrogen, circulate repeatedly 4 times, the force value that vacuumizes is followed successively by-65 pa,-55pa,-10pa and-7.0pa, pumpdown time is followed successively by 12.2s, 9.6s, 7.1s and 6.3s, the nitrogen inflationtime is followed successively by 6.6s, 4.2s, 3.7s and 1.3s, at first vacuumize a large amount of air in the inner bag are discharged, nitrogen more constantly air that inner bag is residual discharge, the force value of 4 circulations can guarantee that the air in the bag drains, avoid packing into germanium wafer generation oxidation in the inner bag, simultaneously, the force value trend that tapers off, prevent the inner bag space that level of oxygen reduces gradually because the degree that vacuumizes is excessive, when charging into nitrogen, bring air again into., after this step is finished in the inner bag oxygen content be 0.9%;
(2) nitrogen in the inner bag is extruded 0.5s, sack is warming up to 90 ℃, compress sack and carry out involution 3.0s, after involution finishes the sack temperature is cooled to 30 ℃, cooling 3.0s shuts sack, the inside and outside airiness of blocking-up bag;
(3) inner bag is placed outer bag rapidly, outer bag is vacuumized back feeding nitrogen, circulate repeatedly 4 times, the force value that vacuumizes is followed successively by-65 pa,-15pa,-10pa and-7.0pa, pumpdown time is followed successively by 8.2s, 4.5s, 2.1s and 1.7s, the nitrogen inflationtime is followed successively by 8.6s, 6.2s, 5.1s and 3.1s, nitrogen is constantly discharged the vacuum China and foreign countries residual air of bag in this step, the force value of 4 circulations can guarantee that the air in the bag drains, germanium wafer generation oxidation outside avoiding packing in the bag, simultaneously, the force value trend that tapers off, prevent that outer bag space that level of oxygen reduces gradually from because the degree that vacuumizes is excessive, bringing air again into when charging into nitrogen, this step is finished after in outer bag oxygen content be 1.1%;
(4) nitrogen in the outer bag is extruded 0.5s, the sack of outer bag compressed be warming up to 100 ℃ simultaneously, carry out the sack involution, after involution finishes the sack temperature is cooled to 30 ℃, cool off 1.0s altogether, break off communicating with outside air, further isolate the germanium wafer in the inner bag, the two-layer protection failure-free of interior Over-bag has guaranteed the stability on germanium wafer surface.
Embodiment 2: the packaging scheme that cleans germanium wafer with 12 6 inch is example, and its nitrogen-filled packaging method may further comprise the steps:
(1) inner bag is vacuumized the back and feed nitrogen, circulate repeatedly 4 times, the force value that vacuumizes be followed successively by-60 pa ,-50pa ,-15pa and-8.0pa, pumpdown time is followed successively by 13.3s, 10.2s, 6.5s and 5.2s, the nitrogen inflationtime is followed successively by 7.5s, 4.6s, 2.2s and 1.5s, after this step is finished in the inner bag oxygen content be 1.0%;
(2) nitrogen in the inner bag is extruded 0.5s, sack is warming up to 95 ℃, compress sack and carry out involution 3.0s, after involution finishes the sack temperature is cooled to 35 ℃, cooling 3.0s shuts sack, the inside and outside airiness of blocking-up bag;
(3) inner bag is placed outer bag rapidly, outer bag is vacuumized back feeding nitrogen, circulate repeatedly 4 times, the force value that vacuumizes be followed successively by-60 pa ,-10pa ,-15pa and-8.0pa, pumpdown time is followed successively by 7.6s, 3.9s, 2.8s and 2.2s, the nitrogen inflationtime is followed successively by 7.9s, 6.5s, 5.1s and 3.5s, after this step is finished in the outer bag oxygen content be 1.1%;
(4) nitrogen in the outer bag is extruded 0.5s, the sack of outer bag compressed be warming up to 110 ℃ simultaneously, carry out the sack involution, after involution finishes the sack temperature is cooled to 35 ℃, cool off 1.0s altogether, break off communicating with outside air, further isolate the germanium wafer in the inner bag, the two-layer protection failure-free of interior Over-bag has guaranteed the stability on germanium wafer surface.
Embodiment 3: the packaging scheme that cleans germanium wafer with 10 8 inch is example, and its nitrogen-filled packaging method may further comprise the steps:
(1) inner bag is vacuumized the back and feed nitrogen, circulate repeatedly 4 times, the force value that vacuumizes be followed successively by-70 pa ,-60pa ,-20pa and-10.0pa, pumpdown time is followed successively by 11.1s, 10.5s, 7.3s and 6.3s, the nitrogen inflationtime is followed successively by 6.6s, 5.1s, 3.0s and 1.8s, after this step is finished in the inner bag oxygen content be 1.2%;
(2) nitrogen in the inner bag is extruded 0.5s, sack is warming up to 100 ℃, compress sack and carry out involution 3.0s, after involution finishes the sack temperature is cooled to 40 ℃, cooling 3.0s shuts sack, the inside and outside airiness of blocking-up bag;
(3) inner bag is placed outer bag rapidly, outer bag is vacuumized back feeding nitrogen, circulate repeatedly 4 times, the force value that vacuumizes be followed successively by-70 pa ,-10pa ,-20pa and-10pa, pumpdown time is followed successively by 7.5s, 4.3s, 2.7s and 2.0s, the nitrogen inflationtime is followed successively by 7.7s, 6.7s, 4.9s and 3.7s, after this step is finished in the outer bag oxygen content be 1.4%;
(4) nitrogen in the outer bag is extruded 0.5s, the sack of outer bag compressed be warming up to 120 ℃ simultaneously, carry out the sack involution, after involution finishes the sack temperature is cooled to 40 ℃, cool off 1.0s altogether, break off communicating with outside air, further isolate the germanium wafer in the inner bag, the two-layer protection failure-free of interior Over-bag has guaranteed the stability on germanium wafer surface.
As mentioned above, although represented and explained the present invention that with reference to specific preferred embodiment it shall not be construed as the restriction to the present invention self.Under the spirit and scope of the present invention prerequisite that does not break away from the claims definition, can make various variations in the form and details to it.
Claims (10)
1. the nitrogen-filled packaging method of a solar cell germanium substrate is characterized in that: may further comprise the steps:
(1) inner bag is vacuumized the back and feeds nitrogen, circulate repeatedly 4 times, the force value that vacuumizes be followed successively by-70 ~-60 pa ,-60 ~-50pa ,-20 ~-10pa and-10 ~-7pa;
(2) nitrogen in the inner bag is extruded, sack is compressed be warming up to 90 ℃ ~ 100 ℃ simultaneously, carry out the sack involution, after involution finishes the sack temperature is cooled to 30 ℃ ~ 40 ℃;
(3) inner bag is placed outer bag rapidly, will outer bag vacuumizes the back and feed nitrogen, circulate repeatedly 4 times, the force value that vacuumizes be followed successively by-70 ~-60 pa ,-20 ~-10pa ,-15 ~-5pa and-10 ~-7pa;
(4) nitrogen in the outer bag is extruded, outer bag sack is compressed be warming up to 100 ℃ ~ 120 ℃ simultaneously, carry out the sack involution, after involution finishes the sack temperature is cooled to 30 ℃ ~ 40 ℃.
2. the nitrogen-filled packaging method of solar cell germanium substrate according to claim 1, it is characterized in that: described inner bag is Nylon Bag, described outer bag is aluminum foil bag.
3. the nitrogen-filled packaging method of solar cell germanium substrate according to claim 1 is characterized in that: the time total 35.2s that inner bag vacuumizes for four times in the step (1), nitrogen inflationtime total 15.8s.
4. the nitrogen-filled packaging method of solar cell germanium substrate according to claim 1 is characterized in that: be 0.5s with the nitrogen extrusion time in the inner bag in the step (2).
5. the nitrogen-filled packaging method of solar cell germanium substrate according to claim 1 is characterized in that: the time with the sack involution of inner bag in the step (2) is 3.0s.
6. the nitrogen-filled packaging method of solar cell germanium substrate according to claim 1 is characterized in that: the time with the sack cooling of inner bag in the step (2) is 3.0s.
7. the nitrogen-filled packaging method of solar cell germanium substrate according to claim 1 is characterized in that: the time total 16.5s that step (3) China and foreign countries bag vacuumizes for four times, nitrogen inflationtime total 23s.
8. the nitrogen-filled packaging method of solar cell germanium substrate according to claim 1 is characterized in that: the nitrogen extrusion time in will outer bag in the step (4) is 0.5s.
9. the nitrogen-filled packaging method of solar cell germanium substrate according to claim 1 is characterized in that: the time of sack involution that will outer bag in the step (4) is 3.0s.
10. the nitrogen-filled packaging method of solar cell germanium substrate according to claim 1 is characterized in that: the time of sack cooling that will outer bag in the step (4) is 1.0s.
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Cited By (3)
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| CN104787496A (en) * | 2014-12-09 | 2015-07-22 | 易德福 | Packaging method for fragile wafers |
| CN108609225A (en) * | 2016-12-10 | 2018-10-02 | 中国科学院大连化学物理研究所 | A kind of encapsulation of fuel cell membrane electrode and storage method |
| CN115535346A (en) * | 2022-12-01 | 2022-12-30 | 江苏鑫华半导体科技股份有限公司 | Packaging method of polycrystalline silicon block |
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Application publication date: 20130807 |