CN103227415A - Rapid frequency shift device and frequency shift method for semiconductor laser - Google Patents
Rapid frequency shift device and frequency shift method for semiconductor laser Download PDFInfo
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- CN103227415A CN103227415A CN2013100979239A CN201310097923A CN103227415A CN 103227415 A CN103227415 A CN 103227415A CN 2013100979239 A CN2013100979239 A CN 2013100979239A CN 201310097923 A CN201310097923 A CN 201310097923A CN 103227415 A CN103227415 A CN 103227415A
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Abstract
A rapid frequency shift device and method for a semiconductor laser. The device includes a DBR laser, a reshaping mirror, a Faraday isolator, a half wave plate, a polarization beam splitter, a bi-pass AOM optical path, a saturated absorption optical path, a photoelectric detector, a phase locking demodulator circuit, a PID feedback circuit, a DDS signal generation circuit, a microcontroller, an analog-digital conversion circuit, a digital-analog conversion circuit and a laser current temperature control circuit. According to the invention, the rapid frequency shift of the DBR laser can be realized while the locking state is kept, the bi-pass AOM optical path is applied in a frequency-stabilized optical path, so that the luminous power loss of the main optical path for cooling is greatly reduced; the frequency precompensation technology is adopted to realize rapid frequency shift and remarkably lower the requirement of the rapid frequency shift for system feedback bandwidth, and besides, the design difficulty of the feedback circuit is reduced, the design is changed to be simple, economic and easy to realize, so that the wide-range rapid tuning can be realized even though the feedback bandwidth is lower.
Description
Technical field
The present invention relates to the electro-optical feedback control field of semiconductor laser, particularly a kind of quick shift frequency device of semiconductor laser and shift frequency method that is used for the atom cooling.
Background technology
The atom cooling technology can be cooled to low-down temperature (uK even nK magnitude) with the atom of motion, can carry out some very important scientific experiments this moment, scientific researches such as fine-structure constant is measured such as carrying out, gravitational field is measured, checking general theory of relativity.Based on the fountain atomic clock of atom cooling technology with its high accuracy, excellent properties such as long-term continous-stable running day by day become the timing standard of a new generation, its accuracy of timekeeping can reach the error that just produced 1s in several ten million years, and so accurate timing all has great application in fields such as navigation, space flight, communications.
The atom cooling technology need be used narrow linewidth, the Frequency Stabilized Lasers light source of high frequency stability, also having a very important requirement simultaneously is to need frequency stabilized carbon dioxide laser can carry out the shift frequency of quick-speed large-scale, generally need in the ms magnitude time, make the atom saturated absorption peak natural linewidth (Г=6MHz) of 8 times of quick shift frequencies of laser even bigger multiple, such as rubidium (Rb) the atom fountain clock of USNO-US Naval Observatory (U.S.Naval Observatory) just to cooling with the natural linewidth of 8 times of frequency stabilized carbon dioxide laser shift frequencies (referring to list of references [1]: " Design and preliminary characterization of the USNO rubidium fountain ", Proceedings of the 36th annual precise time and time interval (PTTI) systems and applications meeting, Washington, D.C, pp508,2005).In order to reach on a large scale the requirement of shift frequency fast, can adopt following several method: a kind of method is to treat that laser is with after the frequency stabilization of saturation-absorption spectrum method, the output gloss is carried out shift frequency with typical bilateral acousto-optic modulator (AOM) light channel structure, light after the shift frequency is coupled into optical fiber again and does the atom cooling with (referring to technology [2] formerly: " High power rapidly tunable system for laser cooling ", Rev.Sci.Instrum.83,015111-1～4,2012, technology [3] formerly: " Double-pass acousto-optic modulator system ", Rev.Sci.Instrum.76,063112-1～6,2005).But the emergent light power of this specification requirement laser is very big, generally also can use image intensifer, because the diffraction efficiency of AOM is generally 60～80%, thereby the bilateral light path produces twice diffraction is wasted on the useless zero order diffracted light a large amount of luminous powers, require space optical coupling degree of regulation for light path in the optical fiber very high on the other hand, the AOM diffraction efficiency is along with rf frequency changes simultaneously, so also can cause the bigger variation of fiber power, therefore this technology generally also needs to carry out the luminous power compensation; A kind of method is based on the shift frequency method of Zeemen effect and (participates in technology [4] formerly: " Frequency-shift of a frequency stabilized laser based on Zeeman effect ", Chin.Phys.Lett.20,1714,2003), therefore but the maximum shift frequency speed of this method and maximum shift frequency scope can be subjected to the restriction of Several Factors, the fastest shift frequency speed that has realized about 1ms of technology formerly.
Summary of the invention
The objective of the invention is in order to solve the deficiency of above-mentioned technology formerly, propose a kind of quick shift frequency device of semiconductor laser and shift frequency method that is used for the atom cooling.When laser the time at shift frequency, can guarantee not losing lock of frequency stabilized carbon dioxide laser, satisfied the application demand of atom cooling.The method is simple, flexibly, be easy to realize, and can be according to application demand flexible shift frequency scope and shift frequency time.
Technical solution of the present invention is as follows:
A kind of quick shift frequency device of semiconductor laser, characteristics are that its formation comprises distributed Blatt reflective (abbreviating DBR as) laser, shaping mirror, faraday isolator, half-wave plate, polarizing beam splitter mirror, bilateral acousto-optic modulator (abbreviating AOM as) light path, saturated absorption light path, photodetector, demodulation of phase locking circuit, proportional integral derivative (abbreviating PID as) feedback circuit, Direct Digital frequency synthesis (abbreviating DDS as) signal generating circuit, microcontroller, analog to digital conversion circuit, D/A converting circuit and laser current temperature-control circuit.
Concrete component structure is as follows: the emergent light of described DBR laser passes through shaping mirror successively, faraday isolator and half-wave plate, pass through the polarizing beam splitter mirror beam split afterwards, transmitted light is used as the atom cooling, reverberation is earlier through returning behind twice shift frequency of a bilateral AOM light path, the light polarization direction of returning has been rotated 90 degree, so can transmission cross polarizing beam splitter mirror, producing saturated absorption peak after this Shu Guang process saturated absorption light path is received by photodetector, and be converted to the signal of telecommunication and enter the demodulation of phase locking circuit, the error signal Se that the demodulation of phase locking circuit demodulates enters the PID feedback circuit, the output signal S of PID feedback circuit
PIDBy laser current temperature-control circuit control DBR laser.Described DDS signal generating circuit is used for producing the radio-frequency (RF) driving signal S that can scan
RFWith synchronous edge triggering signal S
T, S
RFBe used for driving the AOM components and parts in the bilateral AOM light path, S
TBe used for triggering the interrupt system of microcontroller, drive the sweep current S that D/A converting circuit produces a precompensation after microcontroller is triggered simultaneously
I, S
IAlso enter the laser current temperature-control circuit and drive the DBR laser, described analog to digital conversion circuit is used for gathering each road signal of telecommunication and monitors.
A kind of method of work of quick shift frequency device of semiconductor laser as mentioned above comprises that step is as follows:
(1) the DBR laser is opened, and the DDS signal generating circuit produces a RF signal S
RFBe linked into bilateral AOM light path, laser that the DBR laser sends is gone into photodetector through described saturated absorption light path is laggard, this photodetector inserts the demodulation of phase locking circuit with the light electrical signal converted and produces error signal Se, microcontroller compares according to size and the preset threshold of error signal Se, the opening and closing of control PID feedback circuit, thereby the frequency stabilization that realizes laser is on specific saturated absorption peak, and export optical frequency and be designated as ν this moment
1
(2) the DDS signal generating circuit produces RF signal S
RF, RF signal S
RFFrequency quick shift frequency Δ Ω in the Δ t time because acoustooptical effect, bilateral AOM light path is to the laser shift frequency 2 Δ Ω of incident, the DDS signal generating circuit is also producing a synchronous edge triggering signal S in the shift frequency fast
T
(3) synchronous triggering signal S
TInsert microcontroller, trigger its interrupt system, this moment, the microprocessor controls D/A converting circuit produced the sweep current S of a precompensation
I, S
ISize be Δ I, S
ISweep time also be Δ t, precompensation sweep current S
IInsert the laser current temperature-control circuit with the PID feedback signal and control the DBR laser jointly, thereby realize quick shift frequency.
The present invention compares with technology formerly, has the following advantages and good effect:
1, with formerly technology [2], [3] are compared, bilateral AOM light path of the present invention is arranged in the frequency stabilization light path, rather than after the laser frequency stabilization main optical path is carried out shift frequency, so only needs a spot of beam split just can carry out frequency stabilization, most of luminous power is used for the atom cooling, has saved luminous power greatly.
2, compare with technology [4] formerly, frequency stabilized carbon dioxide laser shift frequency scope of the present invention and shift frequency speed are determined by AOM effective bandwidth and response speed only, and the response speed of AOM generally can reach the us magnitude, and therefore shift frequency scope of the present invention is bigger, and shift frequency speed is faster.
3, compare with technology [2] [3] [4] formerly, the precompensation sweep current technology that the present invention adopts can reduce the demand for the feedback circuit bandwidth greatly, reduce the design difficulty of feedback circuit, even make feedback circuit under lower bandwidth, also can realize the quick shift frequency of frequency stabilized carbon dioxide laser and non-losing lock.
Description of drawings
Fig. 1 is the structured flowchart of the quick shift frequency device of semiconductor laser of the present invention.
Fig. 2 is a frequency precompensation know-why schematic diagram of the present invention.
Embodiment
Below in conjunction with example and accompanying drawing the present invention is further specified, but should not limit protection scope of the present invention with this.
See also Fig. 1 earlier, Fig. 1 is the structured flowchart of the quick shift frequency device of semiconductor laser of the present invention.As seen from the figure, the formation of apparatus of the present invention comprises DBR laser 101, shaping mirror 102, faraday isolator 103, half-wave plate 104, polarizing beam splitter mirror 105, bilateral AOM light path 106, saturated absorption light path 107, photodetector 108, demodulation of phase locking circuit 109, PID feedback circuit 110, DDS signal generating circuit 111, microcontroller 112, analog to digital conversion circuit 113, D/A converting circuit 114 and laser current temperature-control circuit 115.
The position relation of above-mentioned component is as follows: the laser that described DBR laser 101 sends enters faraday isolator 103 after shaping mirror 102 shapings, faraday isolator can prevent the light feedback of back level light path, emergent light is adjusted the polarization direction through half-wave plate 104, to regulate the transmitted light and the catoptrical splitting ratio of polarizing beam splitter mirror 105, the sub-fraction reverberation then enters bilateral AOM light path 106, the RF signal S that the AOM in the described bilateral AOM light path 106 is produced by DDS signal generating circuit 111
RFDrive, radio frequency signal frequency is Ω, incident light is produced shift frequency twice, the former road of light beam is returned the back and is seen through polarizing beam splitter mirror 105, then enter saturated absorption light path 107, light beam through saturated absorption is converted to electrical signal by photodetector 108 detections, and this signal enters described demodulation of phase locking circuit 109 and demodulates error signal Se, and the signal after 110 conversion of error signal Se process PID feedback circuit is S
PID, S
PIDBe applied on the laser current temperature control drive circuit 115, thereby the electric current of DBR laser is controlled the realization frequency stabilization, when DDS signal generating circuit 111 carries out rf frequency scanning, can also produce a synchronous edge triggering signal S
T, S
TBe connected to microcontroller 112, described microcontroller 112 control analog to digital conversion circuit 113 and D/A converting circuits 114, D/A converting circuit 113 is connected on the laser current temperature-control circuit 115, the electric current and the temperature of laser current temperature-control circuit 115 control DBR lasers 101, analog to digital conversion circuit 113 is connected to demodulation of phase locking circuit 109, PID feedback circuit 110, laser current temperature-control circuit 115, and these several signals are carried out acquisition monitoring.
Quick shift frequency method based on described contrive equipment is:
(1) DBR laser (101) is opened, and DDS signal generating circuit (111) produces a RF signal S
RFBe linked into bilateral AOM light path, laser that DBR laser (101) sends is gone into photodetector (108) through described saturated absorption light path (107) is laggard, this photodetector (108) inserts demodulation of phase locking circuit (109) with the light electrical signal converted and produces error signal Se, microcontroller (112) compares according to size and the preset threshold of error signal Se, the opening and closing of control PID feedback circuit (110), thereby the frequency stabilization that realizes laser is on specific saturated absorption peak, and export optical frequency and be designated as ν this moment
1
(2) DDS signal generating circuit (111) produces RF signal S
RF, RF signal S
RFFrequency quick shift frequency Δ Ω in the Δ t time because acoustooptical effect, bilateral AOM light path (106) is to the laser shift frequency 2 Δ Ω of incident, DDS signal generating circuit (111) is also producing a synchronous edge triggering signal S in the shift frequency fast
T
(3) synchronous triggering signal S
TInsert microcontroller (112), trigger its interrupt system, microcontroller this moment (112) control D/A converting circuit (114) produces the sweep current S of a precompensation
I, S
ISize be Δ I, S
ISweep time also be Δ t, precompensation sweep current S
IInsert laser current temperature-control circuit (115) with the PID feedback signal and control DBR laser (101) jointly, thereby realize quick shift frequency.
Each road signal schematic representation in the shift frequency method can be consulted shown in Figure 2 fast
The present invention is placed on bilateral AOM light path in the frequency stabilization light path, greatly reduce the optical power loss that is used for atom cooling main optical path, adopt the technology of precompensation scan laser electric current to realize the shift frequency fast on a large scale of semiconductor laser simultaneously, the remarkable demand that reduces feedback electronics bandwidth is fallen, simultaneously also reduced the system design difficulty, shift frequency scope and shift frequency speed can realize regulating flexibly control.Experiment shows that frequency stabilized semiconductor laser stable and reliable operation of the present invention can realize quick shift frequency, satisfies the application demand of atom cooling.
Claims (2)
1. the quick shift frequency device of a semiconductor laser, characteristics are that its formation comprises DBR laser (101), shaping mirror (102), faraday isolator (103), half-wave plate (104), polarizing beam splitter mirror (105), bilateral AOM light path (106), saturated absorption light path (107), photodetector (108), demodulation of phase locking circuit (109), PID feedback circuit (110), DDS signal generating circuit (111), microcontroller (112), analog to digital conversion circuit (113), D/A converting circuit (114) and laser current temperature-control circuit (115), the position relation of said elements is as follows:
The emergent light of described DBR laser (101) is successively by shaping mirror (102), faraday isolator (103) and half-wave plate (104), pass through polarizing beam splitter mirror (105) afterwards and be divided into transmitted light and reverberation, this transmitted light is used as the atom cooling, described reverberation returns through behind described bilateral AOM light path (106) twice shift frequency earlier, the described polarizing beam splitter mirror of the light transmission that returns (105) is received and is converted to the signal of telecommunication through saturated absorption light path (107) generation saturated absorption peak by described photodetector (108) and imports described demodulation of phase locking circuit (109), the error signal Se that this demodulation of phase locking circuit (109) demodulates enters PID feedback circuit (110), this PID feedback circuit (110) output signal S
PIDImport described laser current temperature-control circuit (115), the stable Current Control DBR laser (101) of this laser current temperature-control circuit (115) output carries out temperature control simultaneously;
Described DDS signal generating circuit (111) produces radio-frequency (RF) driving signal S
RFWith synchronous edge triggering signal S
T, radio-frequency (RF) driving signal S
RFThe rf inputs that is linked into bilateral AOM light path (106) drives AOM, S
TBe linked into microcontroller (112), microcontroller (112) is by S
TTrigger and interrupt the sweep current S that rear drive D/A converting circuit (114) produces a precompensation
I, the sweep current S of this precompensation
IInsert laser current temperature-control circuit (115), described analog to digital conversion circuit 113 is used for gathering each road signal of telecommunication and monitors.
2. the quick shift frequency method of the quick shift frequency device of the described semiconductor laser of claim 1 comprises that step is as follows:
1. DBR laser (101) is opened, and DDS signal generating circuit (111) produces a RF signal S
RFBe linked into bilateral AOM light path, laser that DBR laser (101) sends is gone into photodetector (108) through described saturated absorption light path (107) is laggard, this photodetector (108) inserts demodulation of phase locking circuit (109) with the light electrical signal converted and produces error signal Se, microcontroller (112) compares with the setting threshold that is solidificated in the microcontroller program according to the size of error signal Se, the opening and closing of control PID feedback circuit (110), thereby the frequency stabilization that realizes laser is on specific saturated absorption peak, and export optical frequency and be designated as ν this moment
1
2. DDS signal generating circuit (111) produces RF signal S
RF, this RF signal S
RFFrequency quick shift frequency Δ Ω in the Δ t time because acoustooptical effect, bilateral AOM light path (106) is to the laser of incident shift frequency 2 Δ Ω then, DDS signal generating circuit (111) is also producing a synchronous edge triggering signal S in the shift frequency fast
T
3. this synchronous edge triggering signal S
TInsert microcontroller (112), trigger its interrupt system, microcontroller this moment (112) control D/A converting circuit (114) produces the sweep current S of a precompensation
I, S
ISize be Δ I, S
ISweep time also be Δ t, precompensation sweep current S
IInsert laser current temperature-control circuit (115) with the PID feedback signal and control DBR laser (101) jointly, make DBR laser (101) shift frequency 2 Δ Ω.
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| CN103715595A (en) * | 2013-12-16 | 2014-04-09 | 中国科学院福建物质结构研究所 | KHZ single-longitudinal-mode pulse laser feedback control circuit |
| CN103746285A (en) * | 2013-12-27 | 2014-04-23 | 中国科学院国家授时中心 | Acoustic optical modulator-based high-stability laser frequency scanning device |
| CN105958316A (en) * | 2016-06-22 | 2016-09-21 | 中国科学院国家授时中心 | Cesium atom saturated absorption spectra based semiconductor automatic frequency-stabilizing laser |
| CN106273020A (en) * | 2015-05-21 | 2017-01-04 | 湖南挚新科技发展有限公司 | A kind of portable intelligent water (oily) cooling means and device |
| CN107706737A (en) * | 2017-09-18 | 2018-02-16 | 华东师范大学 | A kind of accurate adjustable pulse generating circuit of frequency for semiconductor laser |
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| CN110911963A (en) * | 2019-11-01 | 2020-03-24 | 山西大学 | High-stability polarization spectrum frequency stabilizer |
| CN110958032A (en) * | 2019-11-01 | 2020-04-03 | 中国科学院上海光学精密机械研究所 | Radio frequency storage and frequency shift device based on photonics |
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| CN113572022A (en) * | 2021-06-02 | 2021-10-29 | 西安电子科技大学 | Laser frequency stabilization system based on improved double-path digital phase-locked amplifier |
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| CN103715595B (en) * | 2013-12-16 | 2018-12-21 | 中国科学院福建物质结构研究所 | A kind of KHZ single-longitudinal-pulse pulse laser feedback control circuit |
| CN103746285A (en) * | 2013-12-27 | 2014-04-23 | 中国科学院国家授时中心 | Acoustic optical modulator-based high-stability laser frequency scanning device |
| CN103746285B (en) * | 2013-12-27 | 2016-09-21 | 中国科学院国家授时中心 | A kind of high stability laser frequency scanning means based on acousto-optic modulator |
| CN106273020B (en) * | 2015-05-21 | 2018-07-24 | 湖南挚新科技发展有限公司 | A kind of portable intelligent water（Oil）Cooling means and device |
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| CN105958316B (en) * | 2016-06-22 | 2019-01-11 | 中国科学院国家授时中心 | Semiconductor automatic freqauency stabilization laser based on Cs atom saturated absorption spectrum |
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| CN107706737B (en) * | 2017-09-18 | 2019-06-14 | 华东师范大学 | A kind of accurate adjustable pulse generating circuit of frequency for semiconductor laser |
| CN110112648A (en) * | 2019-04-08 | 2019-08-09 | 中国科学院武汉物理与数学研究所 | Semiconductor conical laser amplifier system under one way and round trip composite mode |
| CN110515290A (en) * | 2019-07-17 | 2019-11-29 | 北京大学 | A kind of laser frequency stabiliz ation method and optical system improving optical pumping cesium-beam atomic clock performance |
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