CN103225060A - Method for preparing copper-zinc-tin-sulfur thin film - Google Patents
Method for preparing copper-zinc-tin-sulfur thin film Download PDFInfo
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- CN103225060A CN103225060A CN2013101013216A CN201310101321A CN103225060A CN 103225060 A CN103225060 A CN 103225060A CN 2013101013216 A CN2013101013216 A CN 2013101013216A CN 201310101321 A CN201310101321 A CN 201310101321A CN 103225060 A CN103225060 A CN 103225060A
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- 239000010409 thin film Substances 0.000 title claims abstract description 28
- WILFBXOGIULNAF-UHFFFAOYSA-N copper sulfanylidenetin zinc Chemical compound [Sn]=S.[Zn].[Cu] WILFBXOGIULNAF-UHFFFAOYSA-N 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title claims abstract description 22
- 239000010949 copper Substances 0.000 claims abstract description 54
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 46
- 229910052802 copper Inorganic materials 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 29
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 19
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 19
- 239000011733 molybdenum Substances 0.000 claims abstract description 19
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 15
- 239000011701 zinc Substances 0.000 claims abstract description 15
- 238000000576 coating method Methods 0.000 claims abstract description 14
- 230000008021 deposition Effects 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 14
- 239000011248 coating agent Substances 0.000 claims abstract description 13
- 239000010408 film Substances 0.000 claims description 63
- 238000000151 deposition Methods 0.000 claims description 24
- SEUJAMVVGAETFN-UHFFFAOYSA-N [Cu].[Zn].S=[Sn]=[Se] Chemical compound [Cu].[Zn].S=[Sn]=[Se] SEUJAMVVGAETFN-UHFFFAOYSA-N 0.000 claims description 9
- 238000002360 preparation method Methods 0.000 claims description 8
- 230000001105 regulatory effect Effects 0.000 claims description 5
- 239000002985 plastic film Substances 0.000 claims description 3
- 239000005030 aluminium foil Substances 0.000 claims description 2
- 239000000843 powder Substances 0.000 claims description 2
- 239000005361 soda-lime glass Substances 0.000 claims description 2
- 229910001220 stainless steel Inorganic materials 0.000 claims description 2
- 239000010935 stainless steel Substances 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 description 17
- 230000008020 evaporation Effects 0.000 description 17
- YGSCHSPBVNFNTD-UHFFFAOYSA-N [S].[Sn].[Zn] Chemical compound [S].[Sn].[Zn] YGSCHSPBVNFNTD-UHFFFAOYSA-N 0.000 description 14
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 7
- QNWMNMIVDYETIG-UHFFFAOYSA-N gallium(ii) selenide Chemical compound [Se]=[Ga] QNWMNMIVDYETIG-UHFFFAOYSA-N 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 238000005566 electron beam evaporation Methods 0.000 description 4
- 229910052711 selenium Inorganic materials 0.000 description 4
- 239000011669 selenium Substances 0.000 description 4
- 238000011160 research Methods 0.000 description 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- 150000003503 terephthalic acid derivatives Chemical class 0.000 description 1
- GZCWPZJOEIAXRU-UHFFFAOYSA-N tin zinc Chemical compound [Zn].[Sn] GZCWPZJOEIAXRU-UHFFFAOYSA-N 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a method for preparing a copper-zinc-tin-sulfur thin film. The method for preparing the copper-zinc-tin-sulfur thin film comprises the following steps that a substrate in which a molybdenum layer is deposited is heated to 300-400 DEG C, electric current is adjusted to 30-70 mA, an evaporative method is adopted, a steam-shaped coating material is deposited on the molybdenum layer, then a first-layer thin film is acquired, and the surface of the first-layer thin film is in a state which is poor in copper and rich in zinc; the temperature of the substrate is adjusted to 400-600 DEG C, the electric current is adjusted to 80-150 mA, the evaporative method is adopted, then a second-layer thin film is acquired through deposition, and the surface of the second-layer thin film is in a state which is rich in copper; the temperature of the substrate is adjusted to 400-600 DEG C, the electric current is adjusted to 20-70 mA, the evaporative method is adopted, then a third-layer thin film is acquired through deposition, and the surface of the third-layer thin film is in a state which is poor in copper. Through the unisource three-step co-evaporative method, the thin film which is efficient and high in evenness can be manufactured, and therefore efficiency of solar cells is improved.
Description
Technical field
The present invention relates to a kind of preparation method of copper-zinc-tin-sulfur film, also relate to the application of described copper-zinc-tin-sulfur film in solar cell, belong to the photovoltaic technology field.
Background technology
As being classified as the most promising thin film solar cell technologies by the well-known solar cell of USDOE and other research institution, the copper indium gallium selenium solar cell technology just by feat of its widely advantage attracting increasing researchist and investor.Up to now, the efficient of copper indium gallium selenium solar cell has broken through 20.3% in the laboratory, and is suitable with silicon single crystal.Simultaneously, increasing company, mechanism are being devoted to the trial production and the commercial extension of this technology.Yet the process of industrialization of copper indium gallium selenium solar cell still lags behind monocrystaline silicon solar cell and other thin-film solar cells, for example Cadimium telluride thin film battery at present.Copper indium gallium selenium solar cell realizes that the biggest obstacle of scale of mass production still is its high production cost at present, therefore whole industry exigence searches out a kind of effective ways and overcomes this obstacle, the scale of mass production cost of copper indium gallium selenium solar cell plate to be dropped to below 1 dollar/watt, have only with the abundant zinc of mineral resources, tin to substitute rare elements indium, gallium respectively, thereby can realize reducing significantly material cost.The structure of matter of copper-zinc-tin-sulfur (selenium) and the structure of matter of copper-indium-galliun-selenium are just the same, and copper-zinc-tin-sulfur (selenium) solar battery structure is also identical with the copper-indium-galliun-selenium battery structure.
The preparation method of copper-zinc-tin-sulfur (selenium) film is divided into vacuum and antivacuum method.At present successful methods is antivacuum solution method, and its efficient can reach 11.1%, but owing to use deleterious diamine, can cause very big injury to environment.Altogether evaporation coating method is the production method of effective copper indium gallium selenium solar cell, and it can obtain the copper indium gallium selenium solar cell of top efficiency 20.3%.Because copper-zinc-tin-sulfur (selenium) has the structure same with copper-indium-galliun-selenium, be expected to obtain high efficiency copper-zinc-tin-sulfur (selenium) solar cell with being total to vapour deposition method.But the result and not as hope.Compare with the achievement in research of the coevaporation of copper-indium-galliun-selenium, the coevaporation achievement in research of copper-zinc-tin-sulfur (selenium) is few and few.This is the vapour pressure height because of zinc-tin, is difficult to obtain the macrobead crystalline form interface and high-quality copper-zinc-tin-sulfur (selenium) film of the rich zinc of poor copper with four conventional sources or three source coevaporation methods.
Summary of the invention
Technical problem to be solved by this invention provides a kind of method that adopts single source evaporation process to prepare copper-zinc-tin-sulfur film, and this method can obtain the film of high quality, high evenness.
For solving the problems of the technologies described above, the technical solution adopted in the present invention is:
A kind of preparation method of copper zinc tin sulfur selenium film, this method comprises the steps:
(1) substrate that will deposit molybdenum layer is heated to 300～400 ℃, regulates electric current to 30～70mA, adopts vapour deposition method, and vaporish Coating Materials is deposited on the described molybdenum layer, obtains the first layer film, and described the first layer film surface is the rich zinc state of poor copper;
(2) regulate substrate temperature to 400～600 ℃, regulate electric current to 80～150mA, adopt vapour deposition method, deposition obtains second layer film, and described second layer film surface is rich copper state;
(3) keeping substrate temperature is 400～600 ℃, regulates electric current to 20～70mA, adopts vapour deposition method, and deposition obtains three-layer thin-film, and described three-layer thin-film surface is poor copper state.
Wherein, described Coating Materials is Cu
2ZnSnS
4Powder, described Cu
2ZnSnS
4Atomicity than for 2:(0.5-1.5): (0.5-1.5): 4.
Wherein, described substrate is any one in soda-lime glass or stainless steel thin slice or aluminium foil or the plastic sheet, preferred polyimide plastics of described plastic sheet or poly terephthalic acid class plastics.
Wherein, the thickness of described molybdenum layer is 200～1500nm.
The application of the copper-zinc-tin-sulfur film of method for preparing in solar cell.
Beneficial effect: the present invention is by the variation of control current, effectively controlled the chemical ingredients of film, make film be rich zinc of poor copper or the poor zinc state of rich copper, and adopt single source three-step approach, and can make film form sandwich structure, finally reach the purpose of optimizing membrane structure, and then the efficient of raising solar cell, this is that multi-source is difficult to accomplish, in addition, this method can also realize that the one continuous line of extensive copper-zinc-tin-sulfur solar cell is produced.Variation by control current, can accurately effectively control thin film composition, and last film does not need through sulfidizing, avoided of the pollution of toxic gas hydrogen sulfide to environment, also shorten the production time simultaneously, saved heating cost, thereby reduced the manufacturing cost of product, and then promoted solar cell being extensive use of in each field, as fields such as space exploration, individual equipment, rural electrification and building intelligents, thereby promote thin-film solar cells to use widely.
The inventive method is simple and easy, can realize that copper-zinc-tin-sulfur solar battery thin film composition accurately controls, guarantee the homogeneity of film, optimize membrane structure, obtain high efficiency gradient and the domain structure of nanometer territory simultaneously, reduce expensive equipment cost, can adopt conventional evaporimeter to carry out the research and development of solar cell.
Description of drawings
Fig. 1 is a copper-zinc-tin-sulfur solar battery structure synoptic diagram;
6. substrate; 5. molybdenum layer; 4.p-type copper-zinc-tin-sulfur absorption layer; 3. Cadmium Sulfide or zinc sulphide buffer layer; 2. intrinsic zinc oxide; 1. transparent conductive oxide Window layer;
Embodiment
According to following embodiment, the present invention may be better understood.Yet, those skilled in the art will readily understand that the described content of embodiment only is used to illustrate the present invention, and should also can not limit the present invention described in detail in claims.
Copper-zinc-tin-sulfur film of the present invention at first needs to adopt on base plate method of evaporation or sputtering method to plate the metal molybdenum that a layer thickness is 200～1500 nanometers before being deposited on 2～6 millimeters substrate, and the resistivity of molybdenum layer is 0.2～5 ohmcm.On the copper-zinc-tin-sulfur absorption layer, plate the excessive layer of Cadmium Sulfide that a layer thickness is 40～250 nanometers with chemical basin sedimentation (CBD) or atomic deposition method (ALD), temperature 150～250 degree annealing 1～5 minute.Then, plate intrinsic zinc oxide and aluminum zinc oxide transparency electrode with sputtering method or atomic layer deposition method, afterwards, the evaporation plated electrode.
Coating Materials used in the present invention is Cu
2ZnSnS
4Powder, Cu
2ZnSnS
4Atomicity than for 2:0.5:0.5:4, the major equipment that is adopted is the electron beam evaporation instrument that heated substrates is housed, constant voltage is 7KV, adopts vapour deposition method,
(1) substrate that will deposit molybdenum layer is heated to 300 ℃, regulates electric current to 30mA, becomes vaporish Coating Materials and is deposited on the molybdenum layer, obtain the first layer film, the plated film time is 10 minutes, and the first layer film is the rich zinc state of poor copper, because the fusing point height of copper, under the situation of low current, be not easy evaporation, and the fusing point of zinc-tin sulphur is low, velocity of evaporation is fast, so the main component of the first layer film is zinc-tin sulphur and a spot of copper, form the rich zinc of poor copper zone;
(2) regulate substrate temperature to 400 ℃, regulate electric current to 80mA, deposition obtains second layer film, and the plated film time is 30 minutes, and the main component of second layer film is a copper-zinc-tin-sulfur, forms the copper rich region territory;
(3) regulating substrate temperature is 400 ℃, regulates electric current to 20mA, and deposition obtains three-layer thin-film, the plated film time is 10 minutes, the main component of three-layer thin-film is zinc-tin sulphur and a spot of copper, forms the poor copper of one deck zone again, and it is to guarantee that film integral is the rich zinc structure of poor copper.
Coating Materials used in the present invention is Cu
2ZnSnS
4Powder, Cu
2ZnSnS
4Atomicity than for 2:1:1:4, the major equipment that is adopted is the electron beam evaporation instrument that heated substrates is housed, constant voltage is 7KV, adopts vapour deposition method,
(1) substrate that will deposit molybdenum layer is heated to 300 ℃, regulates electric current to 50mA, becomes vaporish Coating Materials and is deposited on the molybdenum layer, obtain the first layer film, the plated film time is 30 minutes, and the first layer film is the rich zinc state of poor copper, because the fusing point height of copper, under the situation of low current, be not easy evaporation, and the fusing point of zinc-tin sulphur is low, velocity of evaporation is fast, so the main component of the first layer film is zinc-tin sulphur and a spot of copper, form the rich zinc of poor copper zone;
(2) regulate substrate temperature to 500 ℃, regulate electric current to 120mA, deposition obtains second layer film, the plated film time is 60 minutes, the main component of second layer film is a copper-zinc-tin-sulfur, forms the copper rich region territory, because under the situation of high electric current, the velocity of evaporation of copper is accelerated, and is more or less the same with the velocity of evaporation of zinc-tin sulphur;
(3) regulating substrate temperature is 600 ℃, regulates electric current to 40mA, and deposition obtains three-layer thin-film, the plated film time is 30 minutes, the main component of three-layer thin-film is zinc-tin sulphur and a spot of copper, forms the poor copper of one deck zone again, and it is to guarantee that film integral is the rich zinc structure of poor copper.
Coating Materials used in the present invention is Cu
2ZnSnS
4Powder, Cu
2ZnSnS
4Atomicity than for 2:1.5:1.5:4, the major equipment that is adopted is the electron beam evaporation instrument that heated substrates is housed, constant voltage is 7KV, adopts vapour deposition method,
(1) substrate that will deposit molybdenum layer is heated to 400 ℃, regulates electric current to 70mA, becomes vaporish Coating Materials and is deposited on the molybdenum layer, obtain the first layer film, the plated film time is 60 minutes, and the first layer film is the rich zinc state of poor copper, because the fusing point height of copper, under the situation of low current, be not easy evaporation, and the fusing point of zinc-tin sulphur is low, velocity of evaporation is fast, so the main component of the first layer film is zinc-tin sulphur and a spot of copper, form the rich zinc of poor copper zone;
(2) regulate substrate temperature to 600 ℃, regulate electric current to 150mA, deposition obtains second layer film, the plated film time is 120 minutes, and the main component of second layer film is a copper-zinc-tin-sulfur, forms the copper rich region territory, because under the situation of high electric current, the velocity of evaporation of copper-zinc-tin-sulfur is more or less the same;
(3) regulating substrate temperature is 450 ℃, regulates electric current to 70mA, and deposition obtains three-layer thin-film, the plated film time is 60 minutes, the main component of three-layer thin-film is zinc-tin sulphur and a spot of copper, forms the poor copper of one deck zone again, and it is to guarantee that film integral is the rich zinc structure of poor copper.
Coating Materials used in the present invention is Cu
2ZnSnS
4Powder, Cu
2ZnSnS
4Atomicity than for 2:0.8:0.8:4, the major equipment that is adopted is the electron beam evaporation instrument that heated substrates is housed, constant voltage is 7KV, adopts vapour deposition method,
(1) substrate that will deposit molybdenum layer is heated to 350 ℃, regulates electric current to 60mA, becomes vaporish Coating Materials and is deposited on the molybdenum layer, obtain the first layer film, the plated film time is 30 minutes, and the first layer film is the rich zinc state of poor copper, because the fusing point height of copper, under the situation of low current, be not easy evaporation, and the fusing point of zinc-tin sulphur is low, velocity of evaporation is fast, so the main component of the first layer film is zinc-tin sulphur and a spot of copper, form the rich zinc of poor copper zone;
(2) regulate substrate temperature to 600 ℃, regulate electric current to 150mA, deposition obtains second layer film, the plated film time is 60 minutes, the main component of second layer film is a copper-zinc-tin-sulfur, forms the copper rich region territory, because under the situation of high electric current, the velocity of evaporation of copper is accelerated, and is more or less the same with the velocity of evaporation of zinc-tin sulphur;
(3) regulating substrate temperature is 500 ℃, regulates electric current to 50mA, and deposition obtains three-layer thin-film, the plated film time is 30 minutes, the main component of three-layer thin-film is zinc-tin sulphur and a spot of copper, forms the poor copper of one deck zone again, and it is to guarantee that film integral is the rich zinc structure of poor copper.
Claims (4)
1. the preparation method of a copper zinc tin sulfur selenium film is characterized in that, this method comprises the steps:
(1) substrate that will deposit molybdenum layer is heated to 300～400 ℃, regulates electric current to 30～70mA, adopts vapour deposition method, and vaporish Coating Materials is deposited on the described molybdenum layer, obtains the first layer film, and described the first layer film surface is the rich zinc state of poor copper;
(2) regulate substrate temperature to 400～600 ℃, regulate electric current to 80～150mA, adopt vapour deposition method, deposition obtains second layer film, and described second layer film surface is rich copper state;
(3) regulating substrate temperature is 400～600 ℃, regulates electric current to 20～70mA, adopts vapour deposition method, and deposition obtains three-layer thin-film, and described three-layer thin-film surface is poor copper state.
2. according to the preparation method of the described copper-zinc-tin-sulfur film of claim 1, it is characterized in that described Coating Materials is Cu
2ZnSnS
4Powder, described Cu
2ZnSnS
4Atomicity than for 2:(0.5-1.5): (0.5-1.5): 4.
3. according to the preparation method of the described copper-zinc-tin-sulfur film of claim 1, it is characterized in that described substrate is any one in soda-lime glass or stainless steel thin slice or aluminium foil or the plastic sheet.
4. according to the preparation method of the described copper-zinc-tin-sulfur film of claim 1, it is characterized in that the thickness of described molybdenum layer is 200～1500nm.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105821376A (en) * | 2015-12-24 | 2016-08-03 | 云南师范大学 | Preparation method for copper-zinc-tin sulfide target |
| CN108155256A (en) * | 2016-12-02 | 2018-06-12 | 北京有色金属研究总院 | A kind of absorbed layer has copper-zinc-tin-sulfur film solar cell of graded elemental and preparation method thereof |
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| CN102709393A (en) * | 2012-06-06 | 2012-10-03 | 成都先锋材料有限公司 | Method for preparing thin-film solar cells from copper-zinc-tin sulfur compound single target materials |
| CN102769047A (en) * | 2012-07-31 | 2012-11-07 | 深圳先进技术研究院 | Copper-zinc-tin-sulfide-selenium film and preparation method thereof as well as copper-zinc-tin-sulfide-selenium film solar cell |
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| CN102709393A (en) * | 2012-06-06 | 2012-10-03 | 成都先锋材料有限公司 | Method for preparing thin-film solar cells from copper-zinc-tin sulfur compound single target materials |
| CN102769047A (en) * | 2012-07-31 | 2012-11-07 | 深圳先进技术研究院 | Copper-zinc-tin-sulfide-selenium film and preparation method thereof as well as copper-zinc-tin-sulfide-selenium film solar cell |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105821376A (en) * | 2015-12-24 | 2016-08-03 | 云南师范大学 | Preparation method for copper-zinc-tin sulfide target |
| CN108155256A (en) * | 2016-12-02 | 2018-06-12 | 北京有色金属研究总院 | A kind of absorbed layer has copper-zinc-tin-sulfur film solar cell of graded elemental and preparation method thereof |
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