CN103219565A - Inverse photoelectrochemical cell - Google Patents
Inverse photoelectrochemical cell Download PDFInfo
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- CN103219565A CN103219565A CN2013100886802A CN201310088680A CN103219565A CN 103219565 A CN103219565 A CN 103219565A CN 2013100886802 A CN2013100886802 A CN 2013100886802A CN 201310088680 A CN201310088680 A CN 201310088680A CN 103219565 A CN103219565 A CN 103219565A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/30—Hydrogen technology
- Y02E60/36—Hydrogen production from non-carbon containing sources, e.g. by water electrolysis
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P20/00—Technologies relating to chemical industry
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- Y02P20/133—Renewable energy sources, e.g. sunlight
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Abstract
The invention relates to an inverse photoelectrochemical cell, which belongs to the field of utilization of clean renewable new energy. The inverse photoelectrochemical cell has a structure similar to that of a PEC cell in the prior art, but working principle inverse from that of the PEC cell. The inverse photoelectrochemical cell mainly consists of a p-type semiconductor, an n-type semiconductor the electrode, a counter, an electrolyte and an external circuit. The p-type is a semiconductor photoanode, and the n-type is a semiconductor photocathode. For working, the p-type semiconductor photoanode is applied with forward voltage; and the photoanode of the p-type semiconductor is connected with an anode of an external power supply. The n-type semiconductor photocathode is applied with negative voltage; and the photocathode of the n-type semiconductor is connected to an anode of the external power supply. The cell structure enables the inverse photoelectrochemical cell to gain larger current under a smaller voltage, so as to more effectively realize hydrogen production through decomposition of water by solar energy. The invention has the advantages of simple process, novel concept, cheapness, high efficiency, and easiness for scale application, and has great potential application value.
Description
Technical field
The present invention relates to a kind of backlight electrochemical cell, belong to the renewable utilization of new energy resources of cleaning field.
Background technology
The ultimate challenge of mankind nowadays social development----energy crisis and environmental pollution.Through twice industrial revolution in 19th century and 20th century, the mankind have entered advanced industry and culturally advanced modern society.Yet industrial society develops a large amount of consumption that also caused the energy rapidly.It is estimated, the energy system that the world today relies on, just fossil energy (comprising coal, oil, natural gas) only can be kept only century-old.And along with the continuous rareness of the energy, exploitation difficulty of new forms of energy and cost also increase greatly, institute's consumed energy even can approach or surmount the energy energy that is obtained.Moreover the burning fossil energy causes a large amount of carbon emissions and other harmful substances, air pollution, and global warming has badly influenced human own inhabitation and life.
Unique solution route utilizes the renewable new forms of energy of cleaning exactly.Hydrogen Energy is considered to the alternative energy source of most possible development of future generation, and it contains can be high, and be convenient for carrying and use, and pollution-free, zero carbon emission.Along with the development of technology, except the traditional large-scale application in industrial production, hydrogen also more and more has been applied in such as people's livelihood fields such as fuel cell, hydrogen energy source automobiles.Yet present 96% Hydrogen Energy in the world derives from the consumption of non-regenerative resources such as natural gas, oil equally and transforms, and produces by the steam methane transformation technology such as the annual hydrogen output 95% of the present U.S..Water is composed of hydrogen and oxygen, hydrogen content is abundant, and water is bulky on earth, make hydrogen and oxygen is a kind of desirable approach by brine electrolysis, yet global at present only 3.9% hydrogen is to be obtained by water electrolysis, and the prior art power consumption is huge, and required electric energy is produced by fossil energy equally, and development potentiality is limited.So utilize clean reproducible energies such as solar energy, wind energy, from the water that earth content enriches, obtain the preferred approach that electric energy or Hydrogen Energy are considered to sustainable development from now on, also become one of focus of current science industrial quarters research.
Photoelectrochemical cell (PEC) is exactly by utilizing sunlight to come decomposition water to produce a kind of very promising production of renewable energy resources mode of hydrogen.Typical conventional P EC battery is made up of two electrodes that are inserted in the electrolyte, just anode and negative electrode, and two electrodes have a palpus at least for having the semiconductor photoelectrode of photocatalytic activity, another one can be metal electrode, also can be similarly optoelectronic pole.Optoelectronic pole produces light induced electron-hole under rayed right, produces photogenerated current and photovoltage then, makes hydrone that oxidation and reduction reaction take place respectively on anode and negative electrode respectively, makes oxygen and hydrogen, finishes solar energy-chemical transformation of energy.All the time, what the light anode adopted all is n N-type semiconductor Ns, and like this excitation electron moves to negative electrode and makes hydrogen reduce generation on negative electrode under the illumination, and the hole makes oxygen produce on the light anode to the solution electrode Interface Moving.What in like manner photocathode all adopted is the p N-type semiconductor N.At present, this traditional PEC battery generally is to be the energy with sunlight and applied voltage simultaneously, in that be lower than under the voltage of 1.23V promptly can decomposition water, just is lower than the minimum theoretical voltage of brine electrolysis.Here it is PEC promptly obtains electric current with hydrogen production by water decomposition than the advantage of common direct brine electrolysis under lower voltage.A lot of semi-conducting materials are used as optoelectronic pole and study, and studying widely, the light anode material comprises n-TiO
2, n-Fe
2O
3, n-ZnO, n-WO
3, photocathode material comprises p-Si, p-Cu
2O, p-GaP, p-GaInP
2, p-CuGaSe
2Deng.Although through years of development, the performance of these materials has obtained very big optimization and raising, final for various reasons conversion efficiency or stability still do not reach actual application level.The PEC battery is after finding more than 30 year, and efficient is still very low, and is generally about 1%, very far away from large-scale application at present.
Summary of the invention
The objective of the invention is provides a kind of backlight electrochemical cell in order to solve the existing low problem of PEC cell conversion efficiency.The present invention is based on the novel backlight electrochemical cell that is used for solar hydrogen making that n type photocathode and p type light anode are formed, and this battery types can be realized than conventional P EC battery more performance in the past.
The objective of the invention is to realize by following technical proposals:
Backlight electrochemical cell of the present invention, its structure is similar to the PEC battery of prior art, but its operation principle is opposite with the PEC battery of prior art; Mainly by p N-type semiconductor N, n N-type semiconductor N, electrode, electrolyte and external circuit are formed; Wherein the p N-type semiconductor N is the light anode, and the n N-type semiconductor N is a photocathode; During work, p N-type semiconductor N light anode is applied forward voltage, be about to p N-type semiconductor N light anode and link to each other, n N-type semiconductor N photocathode is applied negative voltage, be about to n N-type semiconductor N photocathode and link to each other with the negative pole of external power with the positive pole of external power; We are with this battery called after backlight electrochemical cell (English Inverse PEC can be abbreviated as IPEC).
The combination of anode and negative electrode comprises in the battery: p N-type semiconductor N light anode and to electrode cathode combination, n N-type semiconductor N photocathode with to electrode anode combination, p N-type semiconductor N light anode and the combination of n N-type semiconductor N photocathode.
Described p N-type semiconductor N light anode is the p N-type semiconductor N material light anode with photoelectric respone ability that applies forward voltage, and anode reaction, i.e. oxidation reaction take place at this electrode place.Comprise p type cupric oxide, p type gallium phosphide, p type copper indium diselenide, p type cuprous oxide, p type silicon etc.
Very apply the n N-type semiconductor N material photocathode with photoelectric respone ability of reverse voltage described n N-type semiconductor N time, cathode reaction, i.e. reduction reaction take place in this electrode place.Comprise n type silicon, n type titanium oxide, n type zinc oxide, n type iron oxide, n type tungsten oxide, n p type gallium arensidep etc.
Described is the electric conducting material electrode to electrode, comprises metal electrode, carbon electrode etc.
Described electrolyte is the aqueous solution with conductivity.Comprise acidic aqueous solution, neutral aqueous solution, alkaline aqueous solution, seawater etc.
The general name of all additional electricity components (comprising power supply) in conductive path that described external circuit is formed for the conducting medium that connects light anode and photocathode and the circuit.
Opposite with the course of work, the principle of traditional photoelectrochemical cell, during the work of backlight electrochemical cell, p N-type semiconductor N light anode is applied forward voltage, being about to p N-type semiconductor N light anode links to each other with the positive pole of external power, electronics in the electrolyte is moved to electrode, at electrode and electrolyte interface place oxidation reaction taking place, produces oxygen.Under illumination, the Fermi level of p N-type semiconductor N reduces downwards, produces photovoltage, and we are called Vp the value of this photovoltage, promptly make anode and negative electrode reach certain voltage difference when applying forward voltage, can Shaoshi under the illumination add the voltage of Vp than under the dark attitude to p N-type semiconductor N light anode.In like manner, n N-type semiconductor N photocathode is applied negative voltage, be about to n N-type semiconductor N photocathode and link to each other, the electronics in the electrode is moved to electrolyte, reduction reaction takes place, produce hydrogen at electrode and electrolyte interface place with the negative pole of external power.Under illumination, the Fermi level of n N-type semiconductor N upwards promotes, and produces photovoltage, and we are called Vn the value of this photovoltage, promptly make anode and negative electrode reach certain voltage difference when applying negative voltage, can Shaoshi under the illumination add the voltage of Vn than under the dark attitude to n N-type semiconductor N light anode.When battery middle-jiao yang, function of the spleen and stomach when very p N-type semiconductor N light anode and negative electrode are n N-type semiconductor N photocathode, the voltage that Shaoshi adds under the illumination can reach (Vn+Vp) V.
Beneficial effect:
1, backlight electrochemical cell of the present invention, backlight electrochemical cell have than traditional electrolysis and traditional photoelectrochemical cell more performance.Compare electrolysis, the backlight electrochemical cell can reduce applied voltage and keep bigger electric current simultaneously again, the reason of reduction voltage as previously mentioned, be because photovoltage Vn(or Vp or Vn+Vp that optoelectronic pole provided in the backlight electrochemical cell) can make applied voltage correspondingly Shaoshi add Vn(or Vp or Vn+Vp), and the bigger reason of electric current is because electronics in n N-type semiconductor N photocathode or the p N-type semiconductor N light anode or hole are respectively the majority carriers among both, so its electrochemical behavior will be similar to metal electrode, thereby can obtain and the similar bigger electric current of metal electrode; With traditional photoelectrochemical cell ratio, the backlight electrochemical cell can be under same low voltage decomposition water, and electric current is significantly improved, reason also as mentioned above.Therefore we can say that the backlight electrochemical cell combines the advantage of electrolysis and traditional photoelectrochemical cell, have the big electric current of electrolysis, have the small voltage of traditional photoelectrochemical cell simultaneously again.And when Vn+Vp was enough big, the photoelectrochemical cell hydrogen production by water decomposition can carry out under very little voltage, in theory even can approach zero volt.Therefore, the performance of backlight electrochemical cell can significantly surmount traditional electrolysis and traditional photoelectrochemical cell, and the potentiality and the development prospect of further lifting are arranged.
2, backlight electrochemical cell of the present invention is expected to the efficient of solar hydrogen making is promoted greatly, and data show that at voltage be 1.2V(＜1.23V) time, can produce 15mA/cm
2Electric current, substantially exceeded the 0.34mA/cm that existing PEC battery 1.2V produces down
2Electric current.
Embodiment
Embodiment 1:
The backlight electrochemical cell: n type silicon photocathode and metal platinum (Pt) be to combination of electrodes, the KOH aqueous solution.It at first is the preparation of n type silicon photocathode.N type monocrystalline silicon piece Si(100) (＜0.01 Ω cm, 450 μ m are thick) is cut into the square sheet about 2cm * 2cm.The Si sheet is successively used acetone, ethanol and pure water ultrasonic cleaning, puts into 90 ℃ H then
2O
2/ H
2SO
4(1:3) soak 10 minutes removing metal and organic contamination, and then the HF aqueous solution of putting into dilution is removed surface oxide layer.Clean with pure water more at last, last nitrogen dries up.It is to press on the unpolished non-oxidation layer in the silicon chip back side with the Ga-In alloy that the ohmic contact of n type silicon chip is made, and with conductive silver paste it is linked to each other with copper cash afterwards.The exposed silicon chip back side, the edge, and the subregion of front encapsulates with insulating epoxy, only stays the about 0.25cm in silicon chip front
2The part of area is exposed.Select the Pt electrode as anode afterwards, form two electrode systems, the KOH aqueous solution of selecting 0.5M concentration for use immerses two electrodes in the electrolyte as electrolyte, and the positive pole of additional power source links to each other with the Pt electrode by lead, and negative pole links to each other with n type Si photocathode.
Simulated solar radiant (AM1.5,100mW/cm are adopted in the photoelectrochemical behaviour test
2).Photoelectrochemical cell is connected electrochemical workstation, carry out current-voltage (I-V) the curve test under dark attitude and the bright attitude and the test of short circuit current, open circuit voltage etc.The brine electrolysis process of the electrolytic cell that two Pt electrodes are formed at the KOH aqueous solution records current density and reaches 200mA/cm
2, cut-in voltage is 2V.And the backlight electrochemical cell that n type Si photocathode and Pt anode are formed in the KOH aqueous solution in the decomposition water process, records current density for reaching 70mA/cm under the dark attitude
2, cut-in voltage is 2V, is 120mA/cm and record current density under the illumination
2, cut-in voltage is 1.8V.That is to say that the backlight electrochemical cell can be reduced to 1.8V from 2V with decomposition voltage, and still keeps 120mA/cm
2Bigger electric current.
Embodiment 2:
The backlight electrochemical cell: p type oxidation bronzing anode and metal platinum (Pt) be to combination of electrodes, the KOH aqueous solution.It at first is the preparation of p type CuO light anode.The CuO film is to obtain by heated oxide metal Cu sheet.Cu sheet (0.25mm thickness, 99.99% purity) is cut into 4cm * 2cm before the oxidation, cleans 20 seconds through rare nitric acid, afterwards with purified rinse water and dry up.Heating is carried out 2h in 500 ℃ of following air.Select the Pt electrode as negative electrode afterwards, form two electrode systems, the KOH aqueous solution of selecting 0.5M concentration for use immerses two electrodes in the electrolyte as electrolyte, and the negative pole of additional power source links to each other with the Pt electrode by lead, and positive pole links to each other with p type CuO light anode.
Simulated solar radiant (AM1.5,100mW/cm are adopted in the photoelectrochemical behaviour test
2).Photoelectrochemical cell is connected electrochemical workstation, carry out current-voltage (I-V) the curve test under dark attitude and the bright attitude and the test of short circuit current, open circuit voltage etc.The brine electrolysis process of the electrolytic cell that two Pt electrodes are formed at the KOH aqueous solution records current density and reaches 200mA/cm
2, cut-in voltage is 2V.And the backlight electrochemical cell that p type CuO light anode and Pt negative electrode are formed in the KOH aqueous solution, in the decomposition water process, recording current density under the dark attitude is 120mA/cm
2, cut-in voltage is 2V, is 150mA/cm and record current density under the illumination
2, cut-in voltage is 1.9V.That is to say that the backlight electrochemical cell can be reduced to 1.9V from 2V with decomposition voltage, and still keeps 150mA/cm
2Bigger electric current.
Embodiment 3:
Backlight electrochemical cell: p type oxidation bronzing anode and the combination of n type silicon photocathode, the KOH aqueous solution.It at first is the preparation of p type CuO light anode.The CuO film is to obtain by heated oxide metal Cu sheet.Cu sheet (0.25mm thickness, 99.99% purity) is cut into 4cm * 2cm before the oxidation, cleans 20 seconds through rare nitric acid, afterwards with purified rinse water and dry up.Heating is carried out 2h in 500 ℃ of following air.Be the preparation of n type silicon photocathode afterwards.N type monocrystalline silicon piece Si(100) (＜0.01 Ω cm, 450 μ m are thick) is cut into the square sheet about 2cm * 2cm.The Si sheet is successively used acetone, ethanol and pure water ultrasonic cleaning, puts into 90 ℃ H then
2O
2/ H
2SO
4(1:3) soak 10 minutes removing metal and organic contamination, and then the HF aqueous solution of putting into dilution is removed surface oxide layer.Clean with pure water more at last, last nitrogen dries up.It is to press on the unpolished non-oxidation layer in the silicon chip back side with the Ga-In alloy that the ohmic contact of n type silicon chip is made, and with conductive silver paste it is linked to each other with copper cash afterwards.The exposed silicon chip back side, the edge, and the subregion of front encapsulates with insulating epoxy, only stays the about 0.25cm in silicon chip front
2The part of area is exposed.Above two electrodes are formed two electrode systems, and the KOH aqueous solution of selecting 0.5M concentration for use immerses two electrodes in the electrolyte as electrolyte, and the negative pole of additional power source links to each other with n type Si photocathode by lead, and positive pole links to each other with p type CuO light anode.
Simulated solar radiant (AM1.5,100mW/cm are adopted in the photoelectrochemical behaviour test
2).Photoelectrochemical cell is connected electrochemical workstation, carry out current-voltage (I-V) the curve test under dark attitude and the bright attitude and the test of short circuit current, open circuit voltage etc.The brine electrolysis process of the electrolytic cell that two Pt electrodes are formed at the KOH aqueous solution records current density and reaches 200mA/cm
2, cut-in voltage is 2V.And the backlight electrochemical cell that p type CuO light anode and n type Si photocathode are formed in the KOH aqueous solution in the decomposition water process, records current density for reaching 70mA/cm under the dark attitude
2, cut-in voltage is 1.9V, is 110mA/cm and record current density under the illumination
2, cut-in voltage is 1.6V.That is to say that the backlight electrochemical cell can further be reduced to 1.6V from 2V with decomposition voltage, and still keeps 110mA/cm
2Bigger electric current.
Embodiment 4:
The backlight electrochemical cell: n type photocatalytic titanium oxide negative electrode and metal platinum (Pt) be to combination of electrodes, the KOH aqueous solution.At first be n type TiO
2The preparation of optoelectronic pole.TiO
2Film is to make by magnetron sputtering method (FTO, 30 Ω per square) on electro-conductive glass.Target is TiO
2Ceramic target, target effective area 16.6cm
2, the distance between target and the substrate is 11cm.Be evacuated to below the 0.5Pa with mechanical pump earlier, open molecular pump afterwards and be evacuated to 5 * 10
-4Pa.Feed high-purity argon gas and make work gas, gas flow is controlled at 15sccm, regulates air pressure to the 1.0Pa operating pressure.Sputter temperature is a room temperature.Open the interchange shielding power supply, be adjusted to the 150W sputtering power, pre-sputter 5min.Open fractional motor and make the specimen holder rotation that remains a constant speed, remove baffle plate, the beginning sputter.Sputtering time is 4h, sample is taken out after naturally cooling to room temperature after sputter finishes.2h anneals in 450 ℃ of air.Copper cash contacts with the FTO of blank space, links to each other with conductive silver paste, and the exposed back side, the edge, and the subregion of front encapsulates with insulating epoxy, only stays the about 0.25cm in front
2The part of area is exposed.Select the Pt electrode as to electrode afterwards, select saturated calomel electrode to form three-electrode system as reference electrode, the KOH aqueous solution of selecting 0.5M concentration for use is as electrolyte.
Simulated solar radiant (AM1.5,100mW/cm are adopted in the photoelectrochemical behaviour test
2).Photoelectrochemical cell is connected electrochemical workstation, carry out current-voltage (I-V) the curve test under dark attitude and the bright attitude and the test of short circuit current, open circuit voltage etc.Work as TiO
2Electrode when forming traditional photoelectrochemical cell with the Pt electrode, has obtained 0.35mA/cm as the light anode under the applied voltage of 1.5V
2Photoelectric current, it can produce Current Decomposition water below 1.23V, as obtaining 0.34mA/cm at the 1.2V place
2Photoelectric current, obtain 0.30mA/cm at the 0.2V place
2Photoelectric current.And work as TiO
2Electrode when forming the backlight electrochemical cell with the Pt electrode, has obtained 40mA/cm as photocathode under the applied voltage of 1.5V
2Photoelectric current, this has sizable lifting than traditional photoelectrochemical cell, it also can produce Current Decomposition water below 1.23V, as obtaining 15mA/cm at the 1.2V place
2Photoelectric current, obtain 0.40mA/cm at the 0.2V place
2Photoelectric current.That is to say TiO
2The backlight electrochemical cell compares TiO
2Tradition photoelectrochemical cell performance significantly improves, and especially the voltage range photoelectric current more than 0.8V has significantly and surmounts.
The above is the preferred embodiments of the present invention only, is not limited to the present invention, and for a person skilled in the art, the present invention can have various changes and variation.Within the spirit and principles in the present invention all, any modification of being done, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1. backlight electrochemical cell, it is characterized in that: its structure is similar to the PEC battery of prior art, but its operation principle is opposite with the PEC battery of prior art; Mainly by p N-type semiconductor N, n N-type semiconductor N, electrode, electrolyte and external circuit are formed; Wherein the p N-type semiconductor N is the light anode, and the n N-type semiconductor N is a photocathode; During work, p N-type semiconductor N light anode is applied forward voltage, be about to p N-type semiconductor N light anode and link to each other, n N-type semiconductor N photocathode is applied negative voltage, be about to n N-type semiconductor N photocathode and link to each other with the negative pole of external power with the positive pole of external power; We are with this battery called after backlight electrochemical cell.
2. backlight electrochemical cell as claimed in claim 1 is characterized in that: the combination of anode and negative electrode comprises in the described battery: p N-type semiconductor N light anode and to electrode cathode combination, n N-type semiconductor N photocathode with to electrode anode combination, p N-type semiconductor N light anode and the combination of n N-type semiconductor N photocathode.
3. backlight electrochemical cell as claimed in claim 1 or 2 is characterized in that: described p N-type semiconductor N light anode is the p N-type semiconductor N material light anode with photoelectric respone ability that applies forward voltage, and anode reaction, i.e. oxidation reaction take place at this electrode place.
4. backlight electrochemical cell as claimed in claim 1 or 2 is characterized in that: described p N-type semiconductor N light anode comprises p type cupric oxide, p type gallium phosphide, p type copper indium diselenide, p type cuprous oxide, p type silicon.
5. backlight electrochemical cell as claimed in claim 1 or 2 is characterized in that: very apply the n N-type semiconductor N material photocathode with photoelectric respone ability of reverse voltage described n N-type semiconductor N time, cathode reaction, i.e. reduction reaction take place in this electrode place.
6. backlight electrochemical cell as claimed in claim 1 or 2 is characterized in that: described n N-type semiconductor N photocathode comprises n type silicon, n type titanium oxide, n type zinc oxide, n type iron oxide, n type tungsten oxide, n p type gallium arensidep.
7. backlight electrochemical cell as claimed in claim 1 or 2 is characterized in that: described is the electric conducting material electrode to electrode, comprises metal electrode, carbon electrode.
8. backlight electrochemical cell as claimed in claim 1, it is characterized in that: the course of work is: opposite with the course of work, the principle of traditional photoelectrochemical cell, during the work of backlight electrochemical cell, p N-type semiconductor N light anode is applied forward voltage, being about to p N-type semiconductor N light anode links to each other with the positive pole of external power, electronics in the electrolyte is moved to electrode, oxidation reaction takes place, produce oxygen at electrode and electrolyte interface place; Under illumination, the Fermi level of p N-type semiconductor N reduces downwards, produces photovoltage, and we are called Vp the value of this photovoltage, promptly make anode and negative electrode reach certain voltage difference when applying forward voltage, can Shaoshi under the illumination add the voltage of Vp than under the dark attitude to p N-type semiconductor N light anode; In like manner, n N-type semiconductor N photocathode is applied negative voltage, be about to n N-type semiconductor N photocathode and link to each other, the electronics in the electrode is moved to electrolyte, reduction reaction takes place, produce hydrogen at electrode and electrolyte interface place with the negative pole of external power; Under illumination, the Fermi level of n N-type semiconductor N upwards promotes, and produces photovoltage, and we are called Vn the value of this photovoltage, promptly make anode and negative electrode reach certain voltage difference when applying negative voltage, can Shaoshi under the illumination add the voltage of Vn than under the dark attitude to n N-type semiconductor N light anode; When battery middle-jiao yang, function of the spleen and stomach when very p N-type semiconductor N light anode and negative electrode are n N-type semiconductor N photocathode, the voltage that Shaoshi adds under the illumination can reach (Vn+Vp) V.
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| CN109072456A (en) * | 2016-01-04 | 2018-12-21 | 道达尔炼油化学公司 | For photo-electrolyzing device photocathode, manufacture the method and photo-electrolyzing device of the photocathode |
| WO2018001051A1 (en) * | 2016-06-27 | 2018-01-04 | 中国科学院金属研究所 | Design method for energy storage device integrated photoelectrochomical water decomposition battery |
| CN107541747A (en) * | 2016-06-27 | 2018-01-05 | 中国科学院金属研究所 | A kind of energy storage device integrating optical electro-chemical water decomposes the design method of battery |
| CN107576704A (en) * | 2017-07-26 | 2018-01-12 | 上海师范大学 | Microcysin LR molecular engram optical electro-chemistry sensor and its preparation and application |
| CN107576704B (en) * | 2017-07-26 | 2020-03-17 | 上海师范大学 | microcystin-LR molecular imprinting photoelectric chemical sensor and preparation and application thereof |
| CN108565504A (en) * | 2018-04-24 | 2018-09-21 | 李秀峰 | A kind of manufacturing method of metal-modified accumulator |
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