CN103219159A - CuxS (x=1-2) counter electrode preparation method for quantum dot sensitization solar batteries - Google Patents
CuxS (x=1-2) counter electrode preparation method for quantum dot sensitization solar batteries Download PDFInfo
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- CN103219159A CN103219159A CN2013100539629A CN201310053962A CN103219159A CN 103219159 A CN103219159 A CN 103219159A CN 2013100539629 A CN2013100539629 A CN 2013100539629A CN 201310053962 A CN201310053962 A CN 201310053962A CN 103219159 A CN103219159 A CN 103219159A
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Abstract
The invention discloses a CuxS (x=1-2) counter electrode preparation method for quantum dot sensitization solar batteries. Cuprous sulfide powder and elemental sulfur powder of different ratio are mixed, a counter electrode is manufactured on a base body like conductive glass through a thermal evaporation method, and the counter electrode, a photo-positive electrode and electrolyte can form the quantum dot sensitization solar battery. The preparation method is simple, can prepare in large area, can easily manufacture counter electrodes with high efficiency and low cost and is suitable for manufacturing various quantum dot sensitization solar batteries.
Description
Technical field
The invention belongs to quantum dot sensitized solar cell and make the field, relate in particular to a kind of Cu that is used for quantum dot sensitized solar cell
xS (x=1 – 2) is to the preparation method of electrode.
Background technology
Solar energy power generating can be considered beautiful, long-lived and the most reliable generation technology up to now.Experienced the history in more than 100 year, developed into third generation solar cell from first generation crystal-silicon solar cell.Dye-sensitized solar cells (DSCs) has cheap cost (its cost of manufacture only is the 1/5-1/10 of silicon solar cell) and simple manufacture craft because of it, and being described as has one of solar cell of application prospect most.At present, the DSCs electricity conversion has surpassed 12%, and every technical indicator is very near requirement of actual application.
In recent years, as the substitute of dye sensitizing agent, quantum dot sensitized dose has been subjected to generally paying attention to gradually.Compare with dyestuff, semiconductor-quantum-point has higher extinction coefficient, can change the adjusting that the energy gap size realizes optical band gap by its size of modulation, reaches the maximum utilization to solar spectrum.Simultaneously, quantum dot has many excitons and produces effect, significantly promotes the quantum efficiency of solar cell, is expected to realize higher photoelectric conversion efficiency.
At present, mainly utilize growth in situ method and chemiadsorption with the Quantum Dots Growth of different chemical component at the wide bandgap semiconductor electrode surface, utilize platinum, gold, carbon, metal sulfide simultaneously and the cuprous sulfide that obtains by the corrosion copper sheet to the quantum dot sensitized solar cell of electrode preparation.But these are several all to exist certain problem to electrode, such as noble metals such as platinum, gold electrode is easily poisoned in many sulphur electrolyte, and catalytic activity is not high and cost is higher; Though carbon is cheap but actively still can not reach the level that satisfies the work of battery-efficient rate to electrode; After need preparing by complicated physical and chemical processes such as solvent thermal electrode, most of metal sulfides obtain by spin coating or silk screen print method again; Although electrode has been overcome the problem of cost and active two aspects by the cuprous sulfide that obtains of corrosion copper sheet, but can cause the problem that electrolyte component changes and existence is difficult to encapsulate because electrolyte corrodes copper sheet continuously, therefore also be difficult to reach the needs of practicability.
Summary of the invention
The objective of the invention is to overcome the defective that above-mentioned prior art exists, but provide a kind of simple large-area preparation, with matrix bond such as electro-conductive glass closely and can improve the Cu that is used for quantum dot sensitized solar cell of the electricity conversion of quantum dot sensitized solar cell
xS (x=1 – 2) is to the preparation method of electrode, and it obtains Cu by thermal evaporation on electro-conductive glass
xS (x=1 – 2) improves the photoelectric conversion efficiency of crystallinity with the quantum dot sensitized solar cell of further raising to electrode by heat treatment.
The present invention adopts following technical scheme to achieve these goals:
A kind of Cu that is used for quantum dot sensitized solar cell
xS (x=1 – 2) to electrode, is characterized in that: described electrode material is a kind of sulfide material Cu of copper
xS (x=1 – 2).
Described a kind of Cu that is used for quantum dot sensitized solar cell
xS (x=1 – 2) to electrode, is characterized in that: the sulfide material Cu of copper
xS (x=1 – 2) utilizes the thermal evaporation preparation.
The described Cu that is used for quantum dot sensitized solar cell
xS (x=1 – 2) to the preparation method of electrode, is characterized in that: matrix is put into the thermal evaporation chamber after cleaning, drying up, treat that the thermal evaporation chamber reaches the certain vacuum degree after, start vaporizer Cu
2The mixture of S and sulphur powder is with the Cu that obtains
xS (x=1 – 2) takes out, and puts into stove and takes out at air atmosphere after annealing certain hour.
The described Cu that is used for quantum dot sensitized solar cell
xS (x=1 – 2) to the preparation method of electrode, is characterized in that: the FTO electro-conductive glass is put into the thermal evaporation chamber through ethanol, acetone ultrasonic cleaning, after drying up, be evacuated to 2 * 10 through mechanical pump, molecular pump
-2After about Pa, start vaporizer Cu
2The mixture of S and S powder, wherein Cu
2The mol ratio of S and S powder is 1:0.8-1.2, the Cu of acquisition
xS (x=1 – 2) is 200-500nm to thickness of electrode, with Cu
xPut into tube furnace air annealing back after S (x=1 – 2) is cut into small pieces to electrode respectively and take out, promptly obtain being used for the Cu of quantum dot sensitized solar cell
xS (x=1 – 2) is to electrode.
The described Cu that is used for quantum dot sensitized solar cell
xS (x=1 – 2) to the preparation method of electrode, is characterized in that: Cu
2The mol ratio of S and S powder is 1:0.8-1.2.
The described Cu that is used for quantum dot sensitized solar cell
xS (x=1 – 2) to the preparation method of electrode, is characterized in that: anneal 300-3600 second.
Beneficial effect of the present invention:
1, Cu
xMatrix bond such as S (x=1 – 2) and electro-conductive glass more firm strengthened its stability, and has been convenient to cell package;
2, can realize large tracts of land one-step method preparation be used for quantum dot sensitized solar cell to electrode, reduced production cost of cells.
3, compare Cu with platinum electrode with gold
xS (x=1 – 2) can obviously reduce the transmission resistance of electronics to electrode, helps obtaining photoelectric conversion efficiency preferably.
Description of drawings
Fig. 1 utilizes the Cu that obtains under the different heat treatment time
xS (x=1 – 2) is to the current-voltage curve of quantum dot sensitized solar cell under the simulated solar rayed of 100 milliwatt/square centimeters of electrode assembling;
Fig. 2 be of the present invention to electrode and traditional platinum to electrode and corrosion copper sheet gained Cu
2S compares the performance of the quantum dot sensitized solar cell of electrode preparation.
Embodiment,
Followingly the present invention is described with reference to specific embodiment.These embodiment only are used to illustrate purpose of the present invention, the scope that it does not limit the present invention in any way.
[embodiment]: the FTO electro-conductive glass is put into the thermal evaporation chamber through ethanol, acetone ultrasonic cleaning after drying up, be evacuated to 2 * 10 through mechanical pump, molecular pump
-2Behind the Pa, start vaporizer Cu
2The mixture of S and S powder.Cu wherein
2The mol ratio of S and S powder is 1:1.The Cu that obtains
xS (x=1 – 2) is 200-500nm to thickness of electrode.With Cu
xAfter being cut into small pieces to electrode, puts into S (x=1 – 2) tube furnace air annealing 300 seconds respectively, and 480 seconds, 1800 seconds, take out after 3600 seconds, promptly obtain being used for the Cu of quantum dot sensitized solar cell
xS (x=1 – 2) is to electrode.
With electrode is assembled into quantum dot sensitized solar cell carries out photoelectric conversion efficiency test of the foregoing description, wherein the light anode is for adopting the nano titanium dioxide porous film of silk screen print method preparation.Quantum dot sensitized dose is the cadmium sulfide and the cadmium selenide of continuous ionic layer adsorption reaction method (SILAR) preparation.Electrolyte is the aqueous solution of 1M vulcanized sodium and 1M elemental sulfur, and test result as shown in Figure 1.As a comparison, on the FTO electro-conductive glass, deposited platinum (pyrolysismethod) to electrode and the resulting Cu of electrolyte corrosion copper sheet
2S is to electrode, and its photoelectric conversion efficiency is as shown in table 1.
The result shows the Cu that utilizes annealing in 300 seconds to obtain
xS (x=1 – 2) has best photoelectric conversion efficiency to the quantum dot sensitized solar cell of electrode assembling under the simulated solar rayed of 100 milliwatt/square centimeters, as shown in Figure 1,0.50 volt of its open circuit photovoltage, 11.63 milliamperes/square centimeter of short-circuit photocurrents, fill factor, curve factor 53.98%, energy conversion efficiency 3.16%.With platinum electrode is compared, the short circuit current of battery, fill factor, curve factor, photoelectric conversion efficiency significantly improve, with on the copper sheet that though electrode is compared short-circuit current density is lower slightly, bigger fill factor, curve factor makes it have higher photoelectric conversion efficiency, therefore is a kind of better in electrode.
Table 1
The quantum dot sensitized solar cell that is obtained by said method is to electrode, and therefore the platinum that its catalytic activity significantly is better than generally using at present promoted current density, open circuit voltage, fill factor, curve factor and the photoelectric conversion efficiency of quantum dot sensitized solar cell to electrode.
To those skilled in the art, should be appreciated that the Cu for preparing among the present invention
xS (x=1 – 2) to electrode except can forming the solar cell with FTO nano particle titanium dioxide porous film light anode on glass, can also and opaque substrates such as porous membrane such as FTO nano wire on glass, nanometer rods, nanometer flower titanium dioxide, zinc oxide and titanium sheet on various nano titanium dioxide porous film light anode assembling solar cell.Not only saved preparation cost, also expanded the scope of application of this kind greatly electrode to electrode, for its commercially producing from now on provides may.
In sum, the present invention makes Cu by thermal evaporation method
xThe easy method that is deposited on securely on the various substrates of S (x=1 – 2), not only can make battery obtain very high photoelectric conversion efficiency, and made things convenient for cell package, have good stable simultaneously, for the practicability of quantum dot sensitized solar cell provides may.In addition, can also be deposited at low temperatures on the substrate of non-refractory by suitably regulating the evaporation technology parameter, enriched the applicable situation to electrode, this will advantageously promote the practicability of quantum dot sensitized solar cell.
Although the present invention is made specific descriptions, should be appreciated that the specific embodiment that the present invention is not limited to describe with reference to the above embodiments.On the contrary, the present invention covers all distortion, equivalents and the replaceable mode that falls in the spirit and scope of the invention.
Claims (6)
1. Cu who is used for quantum dot sensitized solar cell
xS (x=1 – 2) to electrode, is characterized in that: described electrode material is a kind of sulfide material Cu of copper
xS (x=1 – 2).
2. a kind of Cu that is used for quantum dot sensitized solar cell according to claim 1
xS (x=1 – 2) to electrode, is characterized in that: the sulfide material Cu of copper
xS (x=1 – 2) utilizes the thermal evaporation preparation.
3. Cu who is used for quantum dot sensitized solar cell as claimed in claim 1
xS (x=1 – 2) to the preparation method of electrode, is characterized in that: matrix is put into the thermal evaporation chamber after cleaning, drying up, treat that the thermal evaporation chamber reaches the certain vacuum degree after, start vaporizer Cu
2The mixture of S and sulphur powder is with the Cu that obtains
xS (x=1 – 2) takes out, and puts into stove and takes out at air atmosphere after annealing certain hour.
4. the Cu that is used for quantum dot sensitized solar cell according to claim 3
xS (x=1 – 2) to the preparation method of electrode, is characterized in that: the FTO electro-conductive glass is put into the thermal evaporation chamber through ethanol, acetone ultrasonic cleaning, after drying up, be evacuated to 2 * 10 through mechanical pump, molecular pump
-2After about Pa, start vaporizer Cu
2The mixture of S and S powder, wherein Cu
2The mol ratio of S and S powder is 1:0.8-1.2, the Cu of acquisition
xS (x=1 – 2) is 200-500nm to thickness of electrode, with Cu
xPut into tube furnace air annealing back after S (x=1 – 2) is cut into small pieces to electrode respectively and take out, promptly obtain being used for the Cu of quantum dot sensitized solar cell
xS (x=1 – 2) is to electrode.
5. the Cu that is used for quantum dot sensitized solar cell according to claim 3
xS (x=1 – 2) to the preparation method of electrode, is characterized in that: Cu
2The mol ratio of S and S powder is 1:0.8-1.2.
6. the Cu that is used for quantum dot sensitized solar cell according to claim 3
xS (x=1 – 2) to the preparation method of electrode, is characterized in that: anneal 300-3600 second.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103474244A (en) * | 2013-09-18 | 2013-12-25 | 中国科学院合肥物质科学研究院 | Quantum dot sensitized solar battery |
| CN104347273A (en) * | 2014-10-24 | 2015-02-11 | 中国科学院等离子体物理研究所 | Preparation method and application of thin film counter electrode |
| CN104409218A (en) * | 2014-11-26 | 2015-03-11 | 东华大学 | CuxS paired electrode for quantum dot-sensitized solar cells and manufacture and application thereof |
| CN105513805A (en) * | 2016-01-11 | 2016-04-20 | 上海交通大学 | Copper cadmium germanium sulphur nanocrystalline, copper cadmium germanium sulphur counter electrode, and preparation methods and application of copper cadmium germanium sulphur nanocrystalline and copper cadmium germanium sulphur counter electrode |
| CN106784157A (en) * | 2017-01-06 | 2017-05-31 | 西北工业大学 | It is a kind of can the quantum dot sensitized solar cell of double-sided illumination to electrode and preparation |
| CN106960728A (en) * | 2017-03-01 | 2017-07-18 | 三峡大学 | A kind of preparation method of DSSC XS (X=Ni or Co)/carbon composite and flexible to electrode |
| CN111524712A (en) * | 2020-04-13 | 2020-08-11 | 昆明理工大学 | Preparation method of three-dimensional porous structure dye-sensitized solar cell counter electrode |
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| JPS5555580A (en) * | 1978-10-17 | 1980-04-23 | Agency Of Ind Science & Technol | Method of fabricating solar battery |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103474244A (en) * | 2013-09-18 | 2013-12-25 | 中国科学院合肥物质科学研究院 | Quantum dot sensitized solar battery |
| CN104347273A (en) * | 2014-10-24 | 2015-02-11 | 中国科学院等离子体物理研究所 | Preparation method and application of thin film counter electrode |
| CN104409218A (en) * | 2014-11-26 | 2015-03-11 | 东华大学 | CuxS paired electrode for quantum dot-sensitized solar cells and manufacture and application thereof |
| CN105513805A (en) * | 2016-01-11 | 2016-04-20 | 上海交通大学 | Copper cadmium germanium sulphur nanocrystalline, copper cadmium germanium sulphur counter electrode, and preparation methods and application of copper cadmium germanium sulphur nanocrystalline and copper cadmium germanium sulphur counter electrode |
| CN106784157A (en) * | 2017-01-06 | 2017-05-31 | 西北工业大学 | It is a kind of can the quantum dot sensitized solar cell of double-sided illumination to electrode and preparation |
| CN106960728A (en) * | 2017-03-01 | 2017-07-18 | 三峡大学 | A kind of preparation method of DSSC XS (X=Ni or Co)/carbon composite and flexible to electrode |
| CN111524712A (en) * | 2020-04-13 | 2020-08-11 | 昆明理工大学 | Preparation method of three-dimensional porous structure dye-sensitized solar cell counter electrode |
| CN111524712B (en) * | 2020-04-13 | 2022-07-05 | 昆明理工大学 | Preparation method of three-dimensional porous structure dye-sensitized solar cell counter electrode |
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Application publication date: 20130724 |