CN103219475B - The manufacture method of el light emitting device and the manufacture method of electrode base board thereof - Google Patents
The manufacture method of el light emitting device and the manufacture method of electrode base board thereof Download PDFInfo
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- CN103219475B CN103219475B CN201310112575.8A CN201310112575A CN103219475B CN 103219475 B CN103219475 B CN 103219475B CN 201310112575 A CN201310112575 A CN 201310112575A CN 103219475 B CN103219475 B CN 103219475B
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Abstract
A kind of manufacture method of electrode base board of el light emitting device comprises the following steps.At least one first electrode and at least one second electrode is formed on substrate.Form a metal level, cover the first electrode, the second electrode and substrate.One noncrystalline (amorphous) transparency conducting layer is formed on metal level.One patterning process is carried out to noncrystalline transparency conducting layer, to form a noncrystalline transparent conductive patterns.One crystallization processing procedure is carried out to noncrystalline transparent conductive patterns, changes a crystallization transparent conductive patterns into make noncrystalline transparent conductive patterns.With crystallization transparent conductive patterns for shielding, to do not removed by the metal level that crystallization transparent conductive patterns covers, to form at least one first metal electric polar cushion and at least one metal auxiliary electrode on the first electrode, and on the second electrode, form at least one second metal electric polar cushion.
Description
Technical field
The invention relates to a kind of manufacture method of electrode base board, espespecially a kind of electrode base board of el light emitting device and the manufacture method of el light emitting device.
Background technology
Organic Light Emitting Diode (Organic Light-Emitting Diode, OLED) owing to having the advantages such as high-luminous-efficiency, not mercurous (Hg) and area source, in the backlight being widely used in various light-emitting device such as liquid crystal display at present and organic light emitting diode display.Known organic light emitting diode light uses transparent conductive material such as tin indium oxide (indium tin oxide, ITO) to form electrode to reduce the impact for illumination effect.But, in general, still comparatively conductive metal material is high for the resistivity of transparent conductive material, therefore when the electrode of correspondence amplifies because needing the area source of larger area to design by organic light emitting diode light, problems such as causing uniformity of luminance not good because transparency electrode impedance is higher easily occurs.
Summary of the invention
An object of the present invention is the manufacture method of the electrode base board providing a kind of el light emitting device and the manufacture method of el light emitting device, utilize crystallization transparent conductive patterns to be used as shielding to form metal electric polar cushion and metal auxiliary electrode, promote uniformity of luminance to reach, simplify processing procedure, promote process rate and promote stability and the reliability of electrode base board electric connection.
A preferred embodiment of the present invention provides a kind of manufacture method of electrode base board of el light emitting device, comprises the following steps.First, a substrate is provided.Then, on substrate, form at least one first electrode and at least one second electrode.Then, form a metal level, cover the first electrode, the second electrode and substrate.Afterwards, on metal level, one noncrystalline (amorphous) transparency conducting layer is formed.Then, a patterning process is carried out to noncrystalline transparency conducting layer, to form a noncrystalline transparent conductive patterns.Then, a crystallization processing procedure is carried out to noncrystalline transparent conductive patterns, change a crystallization transparent conductive patterns into make noncrystalline transparent conductive patterns.Afterwards, with crystallization transparent conductive patterns for shielding, will do not removed by the metal level that crystallization transparent conductive patterns covers, to form at least one first metal electric polar cushion and at least one metal auxiliary electrode on the first electrode, and on the second electrode, form at least one second metal electric polar cushion.
A preferred embodiment of the present invention provides a kind of manufacture method of el light emitting device, comprises the following steps.First, a substrate is provided.Then, on substrate, form at least one first electrode and at least one second electrode.Then, form a metal level, cover the first electrode, the second electrode and substrate.Afterwards, on metal level, one noncrystalline (amorphous) transparency conducting layer is formed.Then, a patterning process is carried out to noncrystalline transparency conducting layer, to form a noncrystalline transparent conductive patterns.Then, a crystallization processing procedure is carried out to noncrystalline transparent conductive patterns, change a crystallization transparent conductive patterns into make noncrystalline transparent conductive patterns.Afterwards, with crystallization transparent conductive patterns for shielding, will do not removed by the metal level that crystallization transparent conductive patterns covers, to form at least one first metal electric polar cushion and at least one metal auxiliary electrode on the first electrode, and on the second electrode, form at least one second metal electric polar cushion.Then, on the first electrode, form a luminescent layer, and on luminescent layer, form a third electrode.Third electrode is electrically connected with the second electrode, drives the luminescent layer between the first electrode and third electrode to make the second electrode through third electrode.
Accompanying drawing explanation
Fig. 1 to Fig. 8 depicts the manufacture method schematic diagram of the electrode base board of the el light emitting device of a preferred embodiment of the present invention.
Fig. 9 and Figure 10 depicts the manufacture method schematic diagram of the el light emitting device of a preferred embodiment of the present invention.
[primary clustering symbol description
]
The electrode base board of 100 el light emitting devices
110 substrates
110A upper surface
110B lower surface
120 crystalline transparent conductive layers
120A first electrode
120C second electrode
130 metal levels
130A first metal electric polar cushion
130B metal auxiliary electrode
130C second metal electric polar cushion
140 noncrystalline transparency conducting layers
The noncrystalline transparent conductive patterns of 140P
141P crystallization transparent conductive patterns
150 insulating barriers
160 luminescent layers
170 third electrodes
180 encapsulating materials
190 cover plates
200 el light emitting devices
Z upright projection direction.
Embodiment
Please refer to Fig. 1 to Fig. 8.Fig. 1 to Fig. 8 depicts the manufacture method schematic diagram of the electrode base board of the el light emitting device of a preferred embodiment of the present invention.Wherein Fig. 3 and Fig. 8 is upper schematic diagram, the generalized section of Fig. 2 for illustrating along the hatching line A-A ' of Fig. 3, the generalized section of Fig. 7 for illustrating along the hatching line B-B ' of Fig. 8.For convenience of description, each graphic being only of the present invention is illustrated to be easier to understand the present invention, and its detailed ratio can adjust according to the demand of design.The manufacture method of the electrode base board of the el light emitting device of the present embodiment comprises the following steps.First, as shown in Figure 1, provide a substrate 110, substrate has a upper surface 110A and a lower surface 110B.Substrate 110 can comprise the substrate that hard substrate such as glass substrate and ceramic substrate or flexible substrate (flexible substrate) such as plastic base or other applicable material are formed.Then, formation one crystalline transparent conductive layer 120 on the upper surface 110A of substrate 110.Crystalline transparent conductive layer 120 is better comprises tin indium oxide (indium tin oxide, ITO), indium zinc oxide (indium zinc oxide, IZO), aluminum zinc oxide (aluminum zinc oxide, AZO) or other transparent conductive material be applicable to.In addition, crystalline transparent conductive layer 120 is preferably and is directly formed on substrate 110 with a physical vapour deposition (PVD) processing procedure such as sputter process (sputtering process), but the present invention is not as limit.Crystalline transparent conductive layer 120 can also be formed or also prior to substrate 110 forms a noncrystalline transparency conducting layer, then crystalline transparent conductive layer 120 can be formed by the follow-up crystallization processing procedure such as mode such as high annealing or annealing laser makes noncrystalline transparency conducting layer produce crystallization by other processing procedure mode be applicable to such as transfer printing in other preferred embodiment of the present invention.
Then, as shown in Figure 2, patterning is carried out to form at least one first electrode 120A and at least one second electrode 120C on substrate 110 to crystalline transparent conductive layer 120.This patterning process can comprise gold-tinted processing procedure, etch process or other patterning process mode be applicable to.In the present embodiment, first electrode 120A is better can be an anode electrode and the better cathode electrode that can be of the second electrode 120C, but the present invention can optionally not be used as an anode electrode with the first electrode 120A as limit and be used as a cathode electrode with the second electrode 120C.In addition, as shown in Figure 3, the present embodiment is preferably formation first electrode 120A and two second electrode 120C and arranges in pairs or groups, and the shape of the first electrode 120A can be I shape, and two second electrode 120C can establish respectively as the left and right sides, but not as limit.What deserves to be explained is, except above-mentioned to carry out patterning to be formed except the first electrode 120A and the second electrode 120C to crystalline transparent conductive layer 120, the first electrode 120A and the second electrode 120C can also by carrying out crystallization processing procedure again after first carrying out patterning to a noncrystalline transparency conducting layer and being formed.
As shown in Figure 4, after the first electrode 120A and the second electrode 120C is formed, form a metal level 130, cover the first electrode 120A, the second electrode 120C and substrate 110.Metal level 130 is better comprises silver, aluminium, copper, magnesium, molybdenum, the composite bed of above-mentioned material or the alloy of above-mentioned material, but not as limit.Then, on metal level 130, one noncrystalline (amorphous) transparency conducting layer 140 is formed.Noncrystalline transparency conducting layer 140 can comprise tin indium oxide, indium zinc oxide, aluminum zinc oxide or other transparent conductive material be applicable to.Then, as shown in Figure 5, a patterning process is carried out to noncrystalline transparency conducting layer 140, to form a noncrystalline transparent conductive patterns 140P.This patterning process is better comprises a gold-tinted processing procedure and an etch process, but not as limit.For example, when noncrystalline transparency conducting layer 140 is when using tin indium oxide to be formed, the better wet etching processing procedure that can be a use oxalic acid of above-mentioned etch process.Because oxalic acid is for having preferably etching selectivity between tin indium oxide and common metal, therefore compared with the first electrode 120A that can not be corrupted to metal level 130 in time forming noncrystalline transparent conductive patterns 140P and be positioned under metal level 130 and the second electrode 120C.
Then, as shown in figs. 5 and 6, a crystallization processing procedure is carried out to noncrystalline transparent conductive patterns 140P, change a crystallization transparent conductive patterns 141P into make noncrystalline transparent conductive patterns 140P.This crystallization processing procedure can comprise high annealing, annealing laser or other crystallization processing procedure mode be applicable to.Then, as shown in Figure 7, with crystallization transparent conductive patterns 141P for shielding, to do not removed by the metal level 130 that crystallization transparent conductive patterns 141P covers, to form at least one first metal electric polar cushion 130A and at least one metal auxiliary electrode 130B on the first electrode 120A, and form at least one second metal electric polar cushion 130C on the second electrode 120C.What deserves to be explained is, remove that the mode of metal level 130 do not covered by crystallization transparent conductive patterns 141P is better can be a wet etch process, but not as limit.No matter due to the transparent conductive material of to be crystallization transparent conductive patterns 141P or the first electrode 120A and the second electrode 120C be all crystallization, therefore comparatively can not produce crystallization transparent conductive patterns 141P, the first electrode 120A and the second electrode 120C when etch metal layers 130 and destroy.Above fabrication steps, can form the electrode base board 100 of el light emitting device as illustrated in figs. 7 and 8.Manufacture method due to the electrode base board 100 of the el light emitting device of the present embodiment utilizes crystallization transparent conductive patterns 141P to be used as shielding to be formed the first metal electric polar cushion 130A, the second metal electric polar cushion 130C and metal auxiliary electrode 130B, therefore therefore can reach the effect simplifying processing procedure and promote process rate.
As illustrated in figs. 7 and 8, in the electrode base board 100 of the el light emitting device of the present embodiment, the first metal electric polar cushion 130A and the second metal electric polar cushion 130C contacts with the first electrode 120A and the second electrode 120C and is electrically connected respectively.First metal electric polar cushion 130A and the second metal electric polar cushion 130C is preferably the dual-side of the electrode base board 100 being arranged at el light emitting device, in order to be electrically connected with other outside line or external module with input drive signal.First metal electric polar cushion 130A, metal auxiliary electrode 130B and the second metal electric polar cushion 130C are used as shielding with crystallization transparent conductive patterns 141P formed, therefore the first metal electric polar cushion 130A, metal auxiliary electrode 130B and the second metal electric polar cushion 130C in perpendicular on a upright projection direction Z of substrate 110 all cover by crystallization transparent conductive patterns 141P.The design covering the first metal electric polar cushion 130A, metal auxiliary electrode 130B and the second metal electric polar cushion 130C by crystallization transparent conductive patterns 141P can reach the stability of electrode base board 100 electric connection and the effect of reliability that promote el light emitting device.In addition, first metal electric polar cushion 130A is integrally formed with metal auxiliary electrode 130B and is electrical connected, and metal auxiliary electrode 130B is preferably at least one side around the first electrode 120A, can compensate higher the brought negative effect of the first electrode 120A resistance value by this, but the present invention is not as limit, and viewable design needs to adjust the shape of metal auxiliary electrode 130B and distributing position to reach the effect of required electrical compensation.Separately please note, because crystallization transparent conductive patterns 141P is formed via patterning and crystallization with noncrystalline transparency conducting layer (Fig. 7 and Fig. 8 does not show), therefore the first electrode 120A formed compared to carrying out patterning to the crystalline transparent conductive layer (Fig. 7 and Fig. 8 does not show) directly formed and the second electrode 120C, the sheet resistor (sheet resistance) of the first electrode 120A and the second electrode 120C is the sheet resistor being less than or equal to crystallization transparent conductive patterns 141P.
Please refer to Fig. 9 and Figure 10.Fig. 9 and Figure 10 depicts the manufacture method schematic diagram of the el light emitting device of a preferred embodiment of the present invention.Wherein Fig. 9 is upper schematic diagram, the generalized section of Figure 10 for illustrating along the hatching line C-C ' of Fig. 9.The manufacture method of the el light emitting device of the present embodiment comprises the following steps.First, as shown in foregoing and Fig. 1 to Fig. 8, sequentially form the first electrode 120A and the second electrode 120C, metal level 130, crystallization transparent conductive patterns 141P, the first metal electric polar cushion 130A, metal auxiliary electrode 130B and the second metal electric polar cushion 130C in the upper surface 110A of substrate 110.Fabrication steps details and each material behavior of this part illustrate in foregoing, therefore repeat no more at this.Then, as shown in Figures 9 and 10, after the first metal electric polar cushion 130A, metal auxiliary electrode 130B and the second metal electric polar cushion 130C are formed, formation one luminescent layer 160 on the first electrode 120A, and on luminescent layer 160, form a third electrode 170.Third electrode 170 is electrically connected with the second electrode 120C, drives the luminescent layer 160 between the first electrode 120A and third electrode 170 to make the second electrode 120C through third electrode 170.In other words, the second electrode 120C and third electrode 170 can be considered holistic cathode electrode, but not as limit.In addition, luminescent layer 160 can comprise luminous organic material, phosphor or other luminescent material be applicable to.The manufacture method of the el light emitting device of the present embodiment more can be included on substrate 110 and form insulating barrier 150, encapsulating material 180 and a cover plate 190, to form el light emitting device 200 as shown in Figures 9 and 10.Insulating barrier 150 is formed between the first electrode 120A and the second electrode 120C, touches the first electrode 120A during in order to avoid the formation of third electrode 170.Encapsulating material 180 is in order to cover plate 190 and substrate 110 to be binded, in order to reach the effect of protection luminescent layer 160.Because metal auxiliary electrode 130B is preferably at least one side around the first electrode 120A, therefore higher the brought negative effect of the first electrode 120A resistance value can be compensated by this, and then reach the effect promoting el light emitting device 200 uniformity of luminance.In addition, third electrode 170 optionally can use transparent or nontransparent electric conducting material, or/and down (direction towards the lower surface 110B of substrate 110) can produce illumination effect upward in order to make el light emitting device 200.
Comprehensive the above, the manufacture method of the electrode base board of el light emitting device of the present invention and the manufacture method of el light emitting device utilize crystallization transparent conductive patterns to be used as shielding to form metal electric polar cushion and metal auxiliary electrode, reaches the effect simplifying processing procedure and promote process rate by this.In addition, the present invention also utilizes metal auxiliary electrode to compensate the higher impact of transparency electrode resistance value, and then reaches the effect promoting el light emitting device uniformity of luminance.In addition, the present invention also reaches by crystallization transparent conductive patterns covers the design of the first metal electric polar cushion, metal auxiliary electrode and the second metal electric polar cushion the stability of electrode base board electric connection and the effect of reliability that promote el light emitting device.
Claims (10)
1. a manufacture method for the electrode base board of el light emitting device, is characterized in that, comprises the following steps:
One substrate is provided;
At least one first electrode and at least one second electrode is formed on this substrate;
Form a metal level, cover this first electrode, this second electrode and this substrate;
A noncrystalline transparency conducting layer is formed on this metal level;
One patterning process is carried out to this noncrystalline transparency conducting layer, to form a noncrystalline transparent conductive patterns;
One crystallization processing procedure is carried out to this noncrystalline transparent conductive patterns, changes a crystallization transparent conductive patterns into make this noncrystalline transparent conductive patterns; And
With this crystallization transparent conductive patterns for shielding, to do not removed by this metal level that this crystallization transparent conductive patterns covers, to form at least one first metal electric polar cushion and at least one metal auxiliary electrode on this first electrode, and on this second electrode, form at least one second metal electric polar cushion.
2. the manufacture method of the electrode base board of el light emitting device as claimed in claim 1, it is characterized in that, the step of the generation type of this first electrode and this second electrode more comprises carries out patterning to a crystalline transparent conductive layer be formed on this substrate.
3. the manufacture method of the electrode base board of el light emitting device as claimed in claim 2, it is characterized in that, this crystalline transparent conductive layer is directly formed on this substrate with a physical vapour deposition (PVD) processing procedure.
4. the manufacture method of the electrode base board of el light emitting device as claimed in claim 1, it is characterized in that, the sheet resistance of this first electrode and this second electrode is the sheet resistance being less than or equal to this crystallization transparent conductive patterns.
5. the manufacture method of the electrode base board of el light emitting device as claimed in claim 1, it is characterized in that, this first metal electric polar cushion is electrical connected with this metal auxiliary electrode, and this metal auxiliary electrode is at least one side around this first electrode.
6. a manufacture method for el light emitting device, is characterized in that, comprises the following steps:
One substrate is provided;
At least one first electrode and at least one second electrode is formed on this substrate;
Form a metal level, cover this first electrode, this second electrode and this substrate;
A noncrystalline transparency conducting layer is formed on this metal level;
One patterning process is carried out to this noncrystalline transparency conducting layer, to form a noncrystalline transparent conductive patterns;
One crystallization processing procedure is carried out to this noncrystalline transparent conductive patterns, changes a crystallization transparent conductive patterns into make this noncrystalline transparent conductive patterns;
With this crystallization transparent conductive patterns for shielding, to do not removed by this metal level that this crystallization transparent conductive patterns covers, to form at least one first metal electric polar cushion and at least one metal auxiliary electrode on this first electrode, and on this second electrode, form at least one second metal electric polar cushion;
A luminescent layer is formed on this first electrode; And
On this luminescent layer, form a third electrode, wherein this third electrode is electrically connected with this second electrode, drives this luminescent layer between this first electrode and this third electrode to make this second electrode by this third electrode.
7. el light emitting device manufacture method as claimed in claim 6, it is characterized in that, the forming step of this first electrode and this second electrode more comprises carries out patterning to a crystalline transparent conductive layer be formed on this substrate.
8. the manufacture method of el light emitting device as claimed in claim 7, it is characterized in that, this crystalline transparent conductive layer is directly formed on this substrate with a physical vapour deposition (PVD) processing procedure.
9. the manufacture method of el light emitting device as claimed in claim 6, it is characterized in that, the sheet resistance of this first electrode and this second electrode is the sheet resistance being less than or equal to this crystallization transparent conductive patterns.
10. the manufacture method of el light emitting device as claimed in claim 6, it is characterized in that, this first metal electric polar cushion is electrical connected with this metal auxiliary electrode, and this metal auxiliary electrode is at least one side around this first electrode.
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| EP1401033A2 (en) * | 2002-09-19 | 2004-03-24 | Samsung SDI Co. Ltd. | Organic electroluminescent device and manufacturing method thereof |
| CN102456624A (en) * | 2010-11-02 | 2012-05-16 | 乐金显示有限公司 | Array substrate for organic electroluminescent display device and method of fabricating the same |
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| CN102867839A (en) * | 2011-07-07 | 2013-01-09 | 乐金显示有限公司 | Array substrate for organic electroluminescent display device and method of fabricating the same |
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| KR100768182B1 (en) * | 2001-10-26 | 2007-10-17 | 삼성에스디아이 주식회사 | Organic electro luminescence device and method of manufacturing the same |
| KR101776044B1 (en) * | 2010-11-02 | 2017-09-20 | 엘지디스플레이 주식회사 | Array substrate for organic electro luminescent device and method of fabricating the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| EP1401033A2 (en) * | 2002-09-19 | 2004-03-24 | Samsung SDI Co. Ltd. | Organic electroluminescent device and manufacturing method thereof |
| CN102456624A (en) * | 2010-11-02 | 2012-05-16 | 乐金显示有限公司 | Array substrate for organic electroluminescent display device and method of fabricating the same |
| CN102867839A (en) * | 2011-07-07 | 2013-01-09 | 乐金显示有限公司 | Array substrate for organic electroluminescent display device and method of fabricating the same |
| CN102650783A (en) * | 2011-12-29 | 2012-08-29 | 京东方科技集团股份有限公司 | Display device, TFT-LCD (Thin Film Transistor-Liquid Crystal Display) pixel structure and manufacturing method of TFT-LCD pixel structure |
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