CN103219280A - Method for manufacturing ductile circuit interconnection structure by utilization of electrostatic spinning technique and product thereof - Google Patents
Method for manufacturing ductile circuit interconnection structure by utilization of electrostatic spinning technique and product thereof Download PDFInfo
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- CN103219280A CN103219280A CN2013100903634A CN201310090363A CN103219280A CN 103219280 A CN103219280 A CN 103219280A CN 2013100903634 A CN2013100903634 A CN 2013100903634A CN 201310090363 A CN201310090363 A CN 201310090363A CN 103219280 A CN103219280 A CN 103219280A
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Abstract
The invention discloses a method for manufacturing a ductile circuit interconnection structure by utilization of an electrostatic spinning technique and a product of the method. The method includes the following steps: electrostatic spinning solution is sprayed on a silicon slice substrate which is located below a sprayer of an electrostatic spinning device and moves linearly back and forth along the horizontal direction, and then patterns which extend in a wave form and have micro-nano diameters are formed on the substrate; an elastic substrate is selected and processed in a cleaning mode, and stretching processing is carried out on the elastic substrate; the elastic substrate in a stretched state is closely attached to the silicon slice substrate where the patterns are formed, after air between contact surfaces of the elastic substrate and the silicon slice substrate is extruded out, the elastic substrate and the silicon slice substrate are separated, and then the patterns on the silicon slice substrate are printed on the surface of the elastic substrate in a transferring mode; and the elastic substrate is recovered to a natural state, and thus the required ductile circuit interconnection structure is manufactured. The invention further discloses a related product and application of the product. Through the method and the product, the two-stage corrugated structure with high ductility and high precision level can be formed, and the method is particularly suitable for reliable manufacturing of the ductile circuit interconnection structure in a large scale.
Description
Technical field
The invention belongs to the ductility circuit and make the field, more specifically, relate to a kind of method and product that utilizes electrostatic spinning process to prepare ductility circuit interconnects structure.
Background technology
Ductility circuit (strechable circuit) is as a kind of emerging electronic technology, be called scalable circuit, flexible circuit etc. again, it is different from traditional silicon substrate circuit, owing to possess characteristics such as unique flexibility/ductility and efficient, low-cost manufacturing, thereby all has wide application prospect in a plurality of fields, can realization make its multifunction with combining of dress ornament, skin, can cover surfaces of complex shape and moving component surface, concrete utilization for example comprises artificial electronics skin, instrumentation artificial bladder, large tracts of land transducer and driver etc.Consider that the ductility circuit often need respond the change of structure and extends in its deformation limit scope, with their surrounding environment of abundant adaptation, therefore need be provided with the interconnect architecture that can suitably stretch to the ductility circuit with crooked, intact to guarantee through still guaranteeing after repeatedly stretching and relaxing.
In order to prepare the interconnect architecture of ductility circuit, various solutions have been proposed in the prior art.For example, Khang.D.Y etc. have proposed a kind of preparation method (referring to " A stretchable form of single-crystal silicon for high-performance electronics on rubber substrates ", Science311 (5758): 208-212), wherein at first adopt the conventional lithography means on silicon substrate, generate thickness in nanometer to other monocrystalline silicon zone of submicron order, afterwards monocrystalline silicon zone is transferred on the elastic caoutchouc base material of certain stretching prestrain, remove the prestrain of elastic caoutchouc base material at last, make it return to nature, then be squeezed can be perpendicular to base material direction generation bending deformation, generation rule for silicon ribbon, the stretchable wave structure of periodicity.Yet there are many deficiencies in this straight line fiber by the method that the flexing mode prepares the ripple interconnect architecture: flexing etc. outside the plane can't accurately be located, may be presented to, ripple struction loaded down with trivial details as photoetching process.
In order to simplify preparation technology, improve preparation efficiency and be beneficial to encapsulation simultaneously, a kind of method of utilizing electrostatic spinning to prepare the micro-nano ripple struction has been proposed among the CN102162176A, drop on the flexible base, board to form ripple struction wherein by the electrostatic spinning Polymer Solution is ejected via shower nozzle, and through electric field action.Yet further studies show that, this method still exists following defective or deficiency: at first, prepared ripple struction only possesses the one-level ripple, when especially applying to the ductility circuit as interconnect architecture, the ductility aspect is not enough to some extent, when taking place still can to rupture when big elasticity changes; Secondly, the prepared ripple struction of this method only has ductility preferably at the ripple distribution arrangement, and the ductility on especially vertical with the ripple distribution arrangement direction of other directions is very poor.Therefore, in association area, be necessary the preparation technology and the key process parameter thereof of this interconnect architecture spare are made further improvement, to obtain more to meet the ductility circuit product of types of applications occasion.
Summary of the invention
Above defective or improvement demand at prior art, the object of the present invention is to provide a kind of method and product that utilizes electrostatic spinning process to prepare ductility circuit interconnects structure, wherein by interconnect architecture being formed the further research of mechanism, corresponding adjustment preparation technology, can generate possess high ductibility, the two-stage ripple struction of high accuracy level, and be particularly useful for the large-area reliable manufacturing of ductility circuit interconnects structure.
According to one aspect of the present invention, a kind of method of utilizing electrostatic spinning process to prepare ductility circuit interconnects structure is provided, it is characterized in that this method comprises the following steps:
(a) by electrostatic spinning apparatus to being positioned at its shower nozzle below and on the horizontal direction silicon chip substrate that straight line moves back and forth, spraying electrostatic spinning solution, on the silicon chip substrate, form extension in wave shape thus and possess the pattern of nanometer-diameter;
(b) choose elastic substrate and carry out clean, then elastic substrate is done stretch processing;
(c) elastic substrate that is in extended state after will handling by step (b) is close on the silicon chip substrate that is formed with described pattern, is separated after extruding the air between both contact-making surfaces, makes pattern transfer on the silicon chip substrate to the elastic substrate surface;
(d) nature of recovery elastic substrate makes required ductility circuit interconnects structure thus.
As further preferably, in step (a), the operating voltage of described electrostatic spinning apparatus is set 1.5KV～3KV, and the spacing along short transverse is 10mm～30mm between its shower nozzle and the silicon chip substrate.
As further preferably, in step (a), the movement velocity of described silicon chip substrate is set to 100mm/s～400mm/s.
As further preferably, in step (b), described elastic substrate is preferably square, and its four angles are pulled outwardly respectively stretches equal distance.
As further preferably, the amount of the being stretched △ L on each limit of described elastic substrate
1With elastic substrate self catercorner length variable quantity △ L
2Between satisfy following expression formula:
As further preferably, in step (c), the middle section of choosing elastic substrate comes the electrostatic spinning pattern of transfer printing silicon chip substrate, and makes pattern that waveform extends distribute along the diagonal of elastic substrate.
As further preferably, in step (c), the grid of viscosity can also be set on elastic substrate, and make that other zones except that bonding point do not possess viscosity on the substrate surface, elastic substrate is attached on the silicon chip substrate carries out transfer process then.
According to another aspect of the present invention, also provide corresponding ductility circuit interconnects infrastructure product.
As further preferably, the global pattern of described interconnect architecture is sine wave or square-wave form, and its lines this as helical form or waveform.
According to another aspect of the present invention, also provide the application of described ductility circuit interconnects infrastructure product in flexible electronic device preparation process such as ductility circuit, biology sensor, stretchable solar cell.
In general, according to above technical scheme that the present invention conceived compared with prior art, mainly possess following technological merit:
1, by adopting electrostatic spinning process, will under electric field action, constantly the stretch fiber of formation micro/nano level diameter of solution, and decline is ejected into substrate surface and forms all kinds of first order waveform patterns twist; In addition, the contraction by elastic substrate can produce second level waveform patterns on the basis of first order waveform patterns, obtains whole in wave shape and also form the multistage ripple struction of all kinds of small form on big waveform thus; Correspondingly, can obtain the stronger product of ductility, and be particularly useful for the purposes of ductility circuit interconnects structure;
2, all be on the plane according to the prepared two-stage ripple of the present invention interconnect architecture, therefore compared with prior art, flexing outside the plane can not occur, help follow-up packaging process, and overall structure is evenly distributed the resolution height;
3, by the stretch processing of some the critical process conditions among the preparation technology such as electrostatic spinning apparatus operational voltage value, substrate translational speed and elastic substrate and viscosity Mesh Processing etc. are studied improvement, can make all kinds of patterns that present the two-stage waveform according to demand, particularly can control, and possess higher scalability the long wavelength and the distributing homogeneity thereof of second level waveform;
4, simple according to preparation method's integrated artistic flow process of the present invention, be convenient to operation, can directly in conventional environment, process, can realize that simultaneously large tracts of land make fast in conjunction with the technology of array and reel-to-reel, therefore all possess advantage aspect the efficient reducing cost and improve to make.
Description of drawings
Fig. 1 is the agent structure schematic diagram that is used to prepare the manufacturing installation of ductility circuit interconnects structure according to the present invention;
Fig. 2 is the method flow diagram that is used to prepare ductility circuit interconnects structure according to the present invention;
Fig. 3 be used to show when the silicon chip substrate is in different translational speed the schematic diagram of the corresponding one-level waveform patterns that forms, wherein Fig. 3 a is silicon chip substrate corresponding waveform patterns that forms when being in 100mm/s, Fig. 3 b is silicon chip substrate corresponding waveform patterns that forms when being in 200mm/s, Fig. 3 c is silicon chip substrate corresponding waveform patterns that forms when being in 300mm/s, and Fig. 3 d is silicon chip substrate corresponding waveform patterns that forms when being in 400mm/s;
Fig. 4 is the state comparison diagram that is used to show elastic substrate contraction front and back, and wherein Fig. 4 a is perisystolic state, and Fig. 4 b is the state after shrinking;
Fig. 5 is used for exemplary demonstration to be transferred to the state comparison diagram of pattern before and after substrate shrinks on the elastic substrate, wherein Fig. 5 a is the lip-deep pattern of elastic substrate when still being in extended state, and Fig. 5 b is in the lip-deep pattern of elastic substrate behind contraction/reducing condition;
Fig. 6 is the schematic diagram that is arranged on the viscosity grid on the elastic substrate in transfer process.
In institute's drawings attached, identical Reference numeral is used for representing similar elements or structure, wherein:
1-flow pump 2-syringe 3-shower nozzle 4-high pressure generator 5-silicon chip substrate 6-absorption platform 7-mobile platform
Embodiment
In order to make purpose of the present invention, technical scheme and advantage clearer,, the present invention is further elaborated below in conjunction with drawings and Examples.Should be appreciated that specific embodiment described herein only in order to explanation the present invention, and be not used in qualification the present invention.
Fig. 1 is the agent structure schematic diagram that is used to prepare the manufacturing installation of ductility circuit interconnects structure according to the present invention.As shown in fig. 1, manufacturing installation according to ductility circuit interconnects structure of the present invention mainly comprises flow pump 1, syringe 2, high pressure generator 4, absorption platform 6 and mobile platform 7 etc., wherein be filled with for example electrostatic spinning solution of polyethylene glycol oxide PEO, PEDOT:PSS and so in the syringe 2, and outfit flow pump 1, under the effect of flow pump, electrostatic spinning solution micro-precision ground is promoted thus, and be delivered to the shower nozzle 3 that is connected with syringe one end.Absorption platform 6 is positioned at the injection below of shower nozzle 3, and its top absorption carries silicon chip substrate 5, and by the mobile platform 7 that is attached thereto along horizontal direction back and forth straight line move.The positive pole of high pressure generator 4 links to each other with shower nozzle of metal material 3 or syringe 2, and its negative pole links to each other with the absorption platform 6 of metal material, make thus electrostatic spinning solution under electric field action from the jet surface of shower nozzle 4 to substrate 6, and shape descends in the shape of a spiral.
Its concrete working mechanism is: the Polymer Solution after the polarization forms jet under electric field action, the jet surface charging, as shown in Figure 2, because like charges is mutually exclusive, jet forms " whip is moving ", quickens to fly to base material, form helical form in the space, this moment is if motion platform moves so that appropriate speed is unidirectional, extension that this helical fiber spray printing forms on silicon substrate is in wave shape (for example, sinusoidal wave, square etc.) single-stage (first order) wave pattern.
In addition, also be equipped with cleaning unit and drawing mechanism etc. according to preparation facilities of the present invention, this cleaning unit is used for the elastic substrate of PDMS is for example carried out clean, this drawing mechanism is used for the elastic substrate after the cleaning is carried out stretching along its a plurality of different directions, the elastic substrate that will be in extended state then is close on the silicon chip substrate that is formed with the electrostatic spinning pattern, separated after extruding the air between both contact-making surfaces, make pattern transfer on the silicon chip substrate thus to the elastic substrate surface.After definite pattern has been transferred to elastic substrate surface or its central calibration zone territory, recover the nature of elastic substrate, on the basis of first order waveform patterns, also produce second level waveform patterns thus, and obtain whole shape in wave shape and this multistage ripple struction of its lines as helical form or waveform.
Specifically describe the method flow that is used to prepare ductility circuit interconnects structure according to the present invention with reference to Fig. 2 below:
At first can start the flow pump of electrostatic spinning apparatus, electrostatic spinning solution in the syringe is promoted and is delivered to shower nozzle, then by regulating the voltage of high pressure generator, make electrostatic spinning solution charged, charged solution is broken under electric field action with capillary balance and is formed jet, quickens to fly to towards the surface of silicon chip substrate from shower nozzle.In the spatial movement process, similar " whip is moving " shape decline in the shape of a spiral takes place, the final pattern that forms extension in wave shape and possess micro-nano magnitude diameter on the silicon chip substrate.
Then, choose the quadrangle elastic substrate of PDMS for example and carry out clean, the zone marks one and demarcates the zone in the central, then elastic substrate is done stretch processing, and the stretcher strain that as far as possible guarantees to demarcate the zone simultaneously is specification relatively; Four angles of elastic substrate can be installed on four jiaos of drawing mechanisms, the operation principle and the chuck of this drawing mechanism are similar, and when pulling bevel pinion with spanner, four jiaos can be equidistant along the radial direction mobile phase.State contrast before and after this elastic substrate stretches can be with reference to Fig. 4 a and 4b.
Then, make elastic substrate keep extended state constant, and it is close on the silicon chip substrate that is formed with the electrostatic spinning pattern, separated after extruding the air between both contact-making surfaces, make pattern transfer on the silicon chip substrate to the elastic substrate surface.Separating rate should be as early as possible, and make wave pattern drop on elastic substrate to demarcate in the zone as far as possible.
At last, but reverse rotation spanner, four angle centers of elastic substrate are moved to recover the nature of elastic substrate, after the retaining elastic substrate is recovered nature, to present whole in wave shapely and on big waveform, also form the multistage ripple struction of all kinds of small form in its surface, make required ductility circuit interconnects structure thus.
According to a preferred embodiment of the present invention, in the electrostatic spinning process, the movement velocity of silicon chip substrate is set to 100mm/s～400mm/s.This is that the movement velocity of silicon chip substrate is the key factor that influences the concrete shape of first order waveform patterns because as shown in Fig. 3 a-3d.Therefore through more compare test, the movement velocity of silicon chip substrate is set at above-mentioned scope, so that obtain various required first order waveform shapes, and help the generation of second level waveform patterns, but obtain the ductility circuit interconnects structure of difformity and draw ratio thus according to different demands.The state contrast of waveform patterns before and after substrate shrinks can be specifically with reference to Fig. 5 a and 5b.
In the present invention, preferably adopt the middle section of elastic substrate to come the electrostatic spinning pattern of transfer printing silicon chip substrate, and make pattern that waveform extends distribute along the diagonal of elastic substrate.Like this, can guarantee the distortion comparison rule of elastic substrate, and then feasible two-stage waveform patterns preferably.
According to another one preferred implementation of the present invention, the operating voltage of described electrostatic spinning apparatus is set to 1.5KV～2KV, and the spacing along short transverse is 15m～20mm between its shower nozzle and the silicon chip substrate.The relatively large first order waveform patterns of diameter can be obtained like this, and the long wavelength of second level waveform patterns can be controlled indirectly by the control of this diameter; In addition, the two-stage waveform interconnect architecture that is obtained also possesses the characteristics of high ductibility, high accuracy level.
Except operating voltage and this mode of spacing between shower nozzle and the silicon chip substrate by the adjusting electrostatic spinning apparatus, also work out the mode that another is controlled the long wavelength of second level waveform patterns among the present invention, the grid of viscosity also promptly is set on elastic substrate, and for example handle by oxygen plasma or UV ozone and make that other zones except that bonding point do not possess viscosity on the substrate surface, elastic substrate is attached on the silicon chip substrate carries out transfer process then.By with upper type, because elastic substrate only possesses viscosity on each bonding point of grid, all the other zones do not possess viscosity, and the pattern after the transfer printing is only bonding by grid and elastic substrate like this, and the spacing between two adjacent bonding points has determined the long wavelength of second level waveform.
In addition, research invention, when elastic substrate only when some directions are shunk, waveform patterns amplitude maximum in the direction, and waveform patterns amplitude minimum on perpendicular to the direction of this direction; In order to make elastic substrate all can evenly shrink along above two orthogonal directions, and then the amplitude of the second level waveform patterns of assurance generation is more even, therefore the elastic substrate that is used for transfer printing electrostatic spinning pattern among the present invention is preferably square, and its four angles are pulled outwardly respectively and stretch equal distance.In a preferred embodiment, the variable quantity △ L that is stretched of each limit of described elastic substrate
1With elastic substrate self catercorner length variable quantity △ L
2Between satisfy following expression formula
For further specific explanations explanation the present invention, four embodiment have below been provided.
Embodiment 1:
A: the configuration weight percent concentration is 10% huge ethylene oxide solution, uses magnetic stirrer 20 hours, static 2 hours down at 30 ℃; Above-mentioned solution is injected syringe, the metal shower nozzle internal diameter of syringe is 0.8mm, the metal shower nozzle links to each other with the positive pole of high pressure generator, the negative pole of high pressure generator links to each other with the absorption platform, spacing along short transverse between shower nozzle and the silicon chip substrate is 15mm, the silicon chip substrate be placed on the absorption platform and by mobile platform with the speed of 100mm/s along horizontal motion, the operating voltage that applies 1.5KV is simultaneously carried out electrostatic spinning;
B: choose clean, the fresh elasticity PDMS substrate of 40X40mm, and the heart calibrates the middle section of 20X20mm therein.This substrate clamped to draw stretch in the mechanism and carry out stretch processing;
C: the PDMS substrate that will be in extended state is close on the silicon chip substrate that is formed with waveform patterns, extrude the air between both contact-making surfaces, make waveform patterns be in the demarcation middle section of elastic substrate as far as possible, make pattern that waveform extends distribute simultaneously along the diagonal of PDMS substrate; Rapidly silicon chip is separated with the PDMS substrate then, make pattern transfer on the silicon chip substrate to the PDMS substrate surface;
D: remove the PDMS substrate and make with being connected of drawing mechanism and return to nature, make required ductility circuit interconnects structure thus.
A: the configuration weight percent concentration is 6% PEDOT:PSS conducting solution, uses magnetic stirrer 15 hours, static 2 hours down at 20 ℃; Above-mentioned solution is injected syringe, the metal shower nozzle internal diameter of syringe is 0.6mm, the metal shower nozzle links to each other with the positive pole of high pressure generator, spacing along short transverse between shower nozzle and the silicon chip substrate is 20mm, the negative pole of high pressure generator links to each other with the absorption platform, the silicon chip substrate be placed on the absorption platform and by mobile platform with the speed of 200mm/s along horizontal motion, the operating voltage that applies 1.8KV is simultaneously carried out electrostatic spinning;
B: choose clean, the fresh elasticity PDMS substrate of 40X40mm, and the heart calibrates the middle section of 20X20mm therein.This substrate clamped to draw stretch in the mechanism and carry out stretch processing;
C: the PDMS substrate that will be in extended state is close on the silicon chip substrate that is formed with waveform patterns, extrude the air between both contact-making surfaces, make waveform patterns be in the demarcation middle section of elastic substrate as far as possible, make pattern that waveform extends distribute simultaneously along the diagonal of PDMS substrate; Rapidly silicon chip is separated with the PDMS substrate then, make pattern transfer on the silicon chip substrate to the PDMS substrate surface;
D: remove the PDMS substrate and make with being connected of drawing mechanism and return to nature, make required ductility circuit interconnects structure thus.
A: the configuration weight percent concentration is 10% huge ethylene oxide solution, uses magnetic stirrer 20 hours, static 2 hours down at 30 ℃; Above-mentioned solution is injected syringe, the metal shower nozzle internal diameter of syringe is 0.6mm, the metal shower nozzle links to each other with the positive pole of high pressure generator, spacing along short transverse between shower nozzle and the silicon chip substrate is 25mm, the negative pole of high pressure generator links to each other with the absorption platform, the silicon chip substrate be placed on the absorption platform and by mobile platform with the speed of 300mm/s along horizontal motion, the operating voltage that applies 2KV is simultaneously carried out electrostatic spinning;
B: choose clean, the fresh elasticity PDMS substrate of 40X40mm, and the heart calibrates the middle section of 20X20mm therein.This substrate clamped to draw stretch in the mechanism and carry out stretch processing;
C: the PDMS substrate that will be in extended state is close on the silicon chip substrate that is formed with waveform patterns, extrude the air between both contact-making surfaces, make waveform patterns be in the demarcation middle section of elastic substrate as far as possible, make pattern that waveform extends distribute simultaneously along the diagonal of PDMS substrate; Rapidly silicon chip is separated with the PDMS substrate then, make pattern transfer on the silicon chip substrate to the PDMS substrate surface;
D: remove the PDMS substrate and make with being connected of drawing mechanism and return to nature, make required ductility circuit interconnects structure thus.
A: the configuration weight percent concentration is 6% PEDOT:PSS conducting solution, uses magnetic stirrer 15 hours, static 2 hours down at 20 ℃; Above-mentioned solution is injected syringe, the metal shower nozzle internal diameter of syringe is 0.8mm, the metal shower nozzle links to each other with the positive pole of high pressure generator, spacing along short transverse between shower nozzle and the silicon chip substrate is 30mm, the negative pole of high pressure generator links to each other with the absorption platform, the silicon chip substrate be placed on the absorption platform and by mobile platform with the speed of 400mm/s along horizontal motion, the operating voltage that applies 3KV is simultaneously carried out electrostatic spinning;
B: choose clean, the fresh elasticity PDMS substrate of 40X40mm, and the heart calibrates the middle section of 20X20mm therein.This substrate clamped to draw stretch in the mechanism and carry out stretch processing;
C: be in the viscosity grid that is provided with on the PDMS substrate of extended state as shown in Figure 6, and make that by oxygen plasma treatment other zones except that the grid bonding point do not possess viscosity on the substrate surface, elastic substrate is attached on the silicon chip substrate then, make waveform patterns be in the demarcation middle section of elastic substrate as far as possible, make pattern that waveform extends distribute simultaneously along the diagonal of PDMS substrate; Rapidly silicon chip is separated with the PDMS substrate then, make pattern transfer on the silicon chip substrate to the PDMS substrate surface;
D: remove the PDMS substrate and make with being connected of drawing mechanism and return to nature, make required ductility circuit interconnects structure thus.
Those skilled in the art will readily understand; the above only is preferred embodiment of the present invention; not in order to restriction the present invention, all any modifications of being done within the spirit and principles in the present invention, be equal to and replace and improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. a method of utilizing electrostatic spinning process to prepare ductility circuit interconnects structure is characterized in that, this method comprises the following steps:
(a) by electrostatic spinning apparatus to being positioned at its shower nozzle below and on the horizontal direction silicon chip substrate that straight line moves back and forth, spraying electrostatic spinning solution, on the silicon chip substrate, form extension in wave shape thus and possess the pattern of nanometer-diameter;
(b) choose elastic substrate and carry out clean, then elastic substrate is done stretch processing;
(c) elastic substrate that is in extended state after will handling by step (b) is close on the silicon chip substrate that is formed with described pattern, is separated after extruding the air between both contact-making surfaces, makes pattern transfer on the silicon chip substrate to the elastic substrate surface;
(d) nature of recovery elastic substrate makes required ductility circuit interconnects structure thus.
2. the method for claim 1 is characterized in that, in step (a), the operating voltage of described electrostatic spinning apparatus is set to 1.5KV～3KV, and the spacing along short transverse is 10mm～30mm between its shower nozzle and the silicon chip substrate.
3. method as claimed in claim 2 is characterized in that, in step (a), the movement velocity of described silicon chip substrate is set to 100mm/s～400mm/s.
4. as any described method of claim 1-3, it is characterized in that in step (b), described elastic substrate is preferably square, its four angles are pulled outwardly respectively stretches equal distance.
5. method as claimed in claim 4 is characterized in that, the variable quantity △ L that each limit of described elastic substrate is stretched
1With elastic substrate self catercorner length variable quantity △ L
2Between satisfy following expression formula:
6. as any described method of claim 1-5, it is characterized in that in step (c), the middle section of choosing elastic substrate comes the electrostatic spinning pattern of transfer printing silicon chip substrate, and make pattern that waveform extends distribute along the diagonal of elastic substrate.
7. as any described method of claim 1-6, in step (c), the grid of viscosity can also be set on elastic substrate, and make that other zones except that bonding point do not possess viscosity on the substrate surface, elastic substrate is attached on the silicon chip substrate carry out transfer process then.
8. as any prepared ductility circuit interconnects of the described method infrastructure product of claim 1-7.
9. ductility circuit interconnects infrastructure product as claimed in claim 8 is characterized in that the global pattern of described interconnect architecture is sine wave or square-wave form, and its lines are originally as helical form or waveform.
10. the application of ductility circuit interconnects infrastructure product in flexible electronic device preparation process such as ductility circuit, biology sensor, stretchable solar cell as claimed in claim 8 or 9.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103645751A (en) * | 2013-12-09 | 2014-03-19 | 华中科技大学 | Nano-fiber diameter control method based on substrate speed adjustment and control device thereof |
| CN107887321A (en) * | 2017-11-20 | 2018-04-06 | 浙江工业大学 | A kind of microcosmic electronic device turns printing process |
| CN108977960A (en) * | 2018-08-24 | 2018-12-11 | 武汉理工大学 | A kind of high stretching piezoelectricity microfibre and preparation method thereof with twin-stage wave structure |
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| CN102050422A (en) * | 2010-12-01 | 2011-05-11 | 东南大学 | Method for arranging nano wires by combining fiber aid and contact impression |
| CN102162176A (en) * | 2011-03-16 | 2011-08-24 | 华中科技大学 | Micro-nano corrugated structure and preparation method thereof, and device and application of preparation method |
| CN102409462A (en) * | 2011-08-31 | 2012-04-11 | 青岛大学 | Method for printing disordered micro nanofibers into ordered fiber array |
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| US20100059863A1 (en) * | 2004-06-04 | 2010-03-11 | The Board Of Trustees Of The University Of Illinois | Stretchable Form of Single Crystal Silicon for High Performance Electronics on Rubber Substrates |
| CN102050422A (en) * | 2010-12-01 | 2011-05-11 | 东南大学 | Method for arranging nano wires by combining fiber aid and contact impression |
| CN102162176A (en) * | 2011-03-16 | 2011-08-24 | 华中科技大学 | Micro-nano corrugated structure and preparation method thereof, and device and application of preparation method |
| CN102409462A (en) * | 2011-08-31 | 2012-04-11 | 青岛大学 | Method for printing disordered micro nanofibers into ordered fiber array |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103645751A (en) * | 2013-12-09 | 2014-03-19 | 华中科技大学 | Nano-fiber diameter control method based on substrate speed adjustment and control device thereof |
| CN103645751B (en) * | 2013-12-09 | 2016-01-20 | 华中科技大学 | The nanofiber diameter control method regulated based on substrate speed and control device |
| CN107887321A (en) * | 2017-11-20 | 2018-04-06 | 浙江工业大学 | A kind of microcosmic electronic device turns printing process |
| CN108977960A (en) * | 2018-08-24 | 2018-12-11 | 武汉理工大学 | A kind of high stretching piezoelectricity microfibre and preparation method thereof with twin-stage wave structure |
| CN108977960B (en) * | 2018-08-24 | 2021-08-17 | 武汉理工大学 | High-tension piezoelectric microfiber with double-stage wave structure and preparation method thereof |
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| CN103219280B (en) | 2015-06-17 |
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