CN103199802B - 单芯片低噪声放大器 - Google Patents
单芯片低噪声放大器 Download PDFInfo
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- CN103199802B CN103199802B CN201310116048.4A CN201310116048A CN103199802B CN 103199802 B CN103199802 B CN 103199802B CN 201310116048 A CN201310116048 A CN 201310116048A CN 103199802 B CN103199802 B CN 103199802B
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- 238000004519 manufacturing process Methods 0.000 claims abstract description 7
- 239000013078 crystal Substances 0.000 claims description 63
- 238000004891 communication Methods 0.000 abstract description 9
- 230000003321 amplification Effects 0.000 abstract description 2
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 2
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- 238000005516 engineering process Methods 0.000 description 3
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CN201310116048.4A CN103199802B (zh) | 2013-04-03 | 2013-04-03 | 单芯片低噪声放大器 |
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CN201310116048.4A CN103199802B (zh) | 2013-04-03 | 2013-04-03 | 单芯片低噪声放大器 |
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CN103199802A CN103199802A (zh) | 2013-07-10 |
CN103199802B true CN103199802B (zh) | 2015-06-03 |
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Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN106067770B (zh) * | 2016-07-05 | 2019-02-15 | 成都泰格微电子研究所有限责任公司 | 2.7-3.5GHz 2W GaN单片功率放大器及设计方法 |
CN106712725A (zh) * | 2016-11-03 | 2017-05-24 | 南京邮电大学 | 一种基于单片微波集成电路的超宽带高增益低噪声放大器 |
CN106849881B (zh) * | 2016-12-21 | 2020-05-19 | 北京时代民芯科技有限公司 | 一种宽带单片集成低噪声放大器 |
CN109560775B (zh) * | 2017-09-27 | 2023-04-14 | 深圳市中兴微电子技术有限公司 | 一种低噪声放大器电路 |
CN115549602A (zh) * | 2022-10-25 | 2022-12-30 | 合肥本源量子计算科技有限责任公司 | 低噪声放大器电路、低噪声放大器及量子计算机 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7389091B2 (en) * | 2003-07-08 | 2008-06-17 | Nec Corporation | High-frequency amplification circuit |
CN201846313U (zh) * | 2010-11-16 | 2011-05-25 | 成都雷电微力科技有限公司 | 一种毫米波单片集成功率放大器 |
CN102176657A (zh) * | 2011-03-09 | 2011-09-07 | 东南大学 | 应用于毫米波频段的正反馈宽带低噪声放大器 |
CN203135797U (zh) * | 2013-04-03 | 2013-08-14 | 成都雷电微力科技有限公司 | 一种单芯片低噪声放大器 |
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- 2013-04-03 CN CN201310116048.4A patent/CN103199802B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7389091B2 (en) * | 2003-07-08 | 2008-06-17 | Nec Corporation | High-frequency amplification circuit |
CN201846313U (zh) * | 2010-11-16 | 2011-05-25 | 成都雷电微力科技有限公司 | 一种毫米波单片集成功率放大器 |
CN102176657A (zh) * | 2011-03-09 | 2011-09-07 | 东南大学 | 应用于毫米波频段的正反馈宽带低噪声放大器 |
CN203135797U (zh) * | 2013-04-03 | 2013-08-14 | 成都雷电微力科技有限公司 | 一种单芯片低噪声放大器 |
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Denomination of invention: Single-chip low-noise amplifier Effective date of registration: 20170519 Granted publication date: 20150603 Pledgee: Chengdu SME financing Company Limited by Guarantee Pledgor: RML Technology Co., Ltd. Registration number: 2017510000025 |
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Date of cancellation: 20181106 Granted publication date: 20150603 Pledgee: Chengdu SME financing Company Limited by Guarantee Pledgor: RML Technology Co., Ltd. Registration number: 2017510000025 |
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Denomination of invention: Single-chip low-noise amplifier Effective date of registration: 20181116 Granted publication date: 20150603 Pledgee: Chengdu SME financing Company Limited by Guarantee Pledgor: RML Technology Co., Ltd. Registration number: 2018510000122 |
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Address after: 610041 Shiyang Industrial Park, No.288, Yixin Avenue, hi tech Zone, Chengdu, Sichuan Province Patentee after: Chengdu lightning Micro Power Technology Co., Ltd Address before: 610041 Shiyang Industrial Park, hi tech Zone, Chengdu, Sichuan Patentee before: RML TECHNOLOGY Co.,Ltd. |
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