CN103199162A - Method of manufacturing anodized alumine photoinduced emission spectrum device with zinc oxide - Google Patents
Method of manufacturing anodized alumine photoinduced emission spectrum device with zinc oxide Download PDFInfo
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- CN103199162A CN103199162A CN201310133708XA CN201310133708A CN103199162A CN 103199162 A CN103199162 A CN 103199162A CN 201310133708X A CN201310133708X A CN 201310133708XA CN 201310133708 A CN201310133708 A CN 201310133708A CN 103199162 A CN103199162 A CN 103199162A
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- zinc oxide
- alumine
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Abstract
The invention belongs to the technical field of lighting devices and particularly relates to an anodized alumine photoinduced emission spectrum device manufactured with zinc oxide and a method of manufacturing the anodized alumine photoinduced emission spectrum device with the zinc oxide. The anodized alumine photoinduced emission spectrum device is characterized in that anodized alumine is contacted with the zinc oxide and a strong phenomenon that a photoinduced emission spectrum is adjustable is represented. The structure overcomes the defect of instability of properties of the zinc oxide and integrates the advantage that an anodized alumine porous structure has extremely high surface-to-volume ratio. The anodized alumine photoinduced emission spectrum device has the advantages of being low in cost, simple in procedures and stable in performance. The invention further provides a method. According to the method, the anodized alumine can be grown on an aluminum film and the aluminum film is combined with novel high-migration-rate backing materials in all sorts of semi-conductor industries. An application range of the method of manufacturing the anodized alumine photoinduced emission spectrum device with the zinc oxide is extremely broadened.
Description
Technical field
The invention belongs to the luminescent device technical field, be specifically related to a kind of employing zinc oxide modulating anode aluminium oxide photoluminescence spectrum device and preparation method thereof.
Background technology
Luminescent device especially light-emitting diode is to use a kind of device very widely in the semiconductor device.This class device comes out the energy emission that the energy of different input forms changes into photon.Common light emitting semiconductor device can only rely on the energy emission of input to go out the interior light wave of narrower wave band usually at present, and in visible-range, this mainly is subject to the principle of luminosity of general light emitting semiconductor device to the light wave of radiation usually.Of the present invention is the mode that anodised aluminium and zinc oxide luminescent spectrum combine, and zinc oxide wherein is that research is as an active material of novel light-emitting device.Luminescent material such as zinc oxide also has zinc selenide (ZnSe), gallium nitride (GaN) etc.
Atomic layer deposition is a kind of advanced person's the chemical vapour deposition film preparation method from restraint-type, have atomic level other accurate film thickness control ability and good conformal nature, being suitable for low temperature deposition prepares to give birth at nano level film, be adapted at most developing zinc oxide on the anodised aluminium of loose structure, and realize that different growth conditionss are to the modulating action of luminous spectrum.
Summary of the invention
The object of the present invention is to provide a kind of with low cost, step simple, be easy to luminescent device with the loose structure of ic process compatibility and dependable performance and preparation method thereof.
Loose structure luminescent device provided by the invention is the luminescent device that adopts zinc oxide modulating anode aluminium oxide photoluminescence spectrum to make, and namely utilizes the luminescent device of photoluminescence spectrum to make of different zinc oxide thickness modulating anode aluminium oxide.Wherein, adopt advanced atomic layer deposition technology deposit zinc oxide (ZnO), described atomic layer deposition technology refers to traditional atomic layer deposition technology (ALD), the atomic layer deposition technology of plasma enhanced (Plasma Enhanced ALD, PEALD) and spatially distributed atomic layer deposition (Spatial ALD, SALD) and the mutation of all atomic layer deposition technologies etc.; Adopt anodised aluminium (AAO) and the contacted ray structure of zinc oxide, anodised aluminium can directly obtain from the growth of aluminium film, perhaps the aluminium film is placed on the various dissimilar Semiconductor substrate to obtain.Described Semiconductor substrate can be the silicon (Si) of different crystal orientations or other are as germanium (Ge), GaAs (GaAs), indium phosphide high mobility semiconductor materials such as (InP).
The preparation method of the luminescent device of the zinc oxide modulating anode aluminium oxide photoluminescence spectrum of the employing atomic layer deposition that the present invention proposes, concrete steps are as follows:
(1) at first prepares the aluminium backing material of luminescent device with the technology of physical sputtering or vacuum evaporated aluminium, comprise the aluminium film that places on silicon or other high mobility semiconductors.If adopt simple aluminium flake can omit this step as substrate, hereinafter being referred to as these several substrates that step (1) obtains is substrate;
(2) adopt oxalic acid solution as electrolyte, substrate is anode, and gold or graphite are negative pole;
(3) making alive 20-80 V carries out the anodic oxidation reactions first time;
(4) phosphoric acid of usefulness suitable temperature and chromic acid mixed solution water-bath heated substrate are 30-300 minute, preferred 50-80 minutes;
(5) clean substrate with deionized water;
(6) repeat (3)-(4), water-bath changes 2-10 minute into heating time in the step (4);
(7) substrate for preparing is placed the atomic layer deposition reactions chamber, when the question response chamber reaches 0.3-2 Torr, the operating pressure of reaction chamber remains on 2-5 torr, and ALT pulse formula ground feeds Zn source (DEZn) and deionized water, and inert gas N is used in two provenance pulses respectively
2Separate the accessory substance in the purge course of reaction and unnecessary gas, the ZnO layer of an ALD growth cycle of formation; Wherein, the ALD burst length that forms 1 the needed Zn of cycle ZnO layer source is 0.2-2 s, inert gas N
2The purge time is 1-5 s; The deionized water burst length is 0.2-2.0 s, inert gas N
2The purge time is 0.5-5.0 s, reacts under 150-200 ℃, controls thickness and the conductivity of zinc oxide by the growth cycle N that changes ZnO;
(8) last, the luminescent device that preparation is formed carries out the luminescence generated by light test.
The present invention has the following advantages:
1, the preparation cost of anodised aluminium is cheap, and method is simple, the output height;
2, the zinc oxide of atomic layer deposition is with low cost, has accurate film thickness monitoring ability and conformality;
3, utilize the contacted mode of anodised aluminium and zinc oxide to obtain the stable performance of luminescent device;
4, anodised aluminium can be grown from the aluminium film, and the aluminium film can be integrated with various substrates easily, expanded the application scenario of this luminescent device greatly;
5, by the accurate step covering power of atomic layer deposition and the loose structure of anodised aluminium, make this device have high surface-to-volume ratio, thereby effectively improve energy conversion efficiency.
Description of drawings
Fig. 1 luminescent device structural representation of the present invention.
Fig. 2 luminescent device sample surfaces of the present invention shape appearance figure.
The anodised aluminium photoluminescence spectrum of Fig. 3 zinc oxide modulation of the present invention.
The element information that Fig. 4 the present invention obtains by energy-dispersive X-ray fluorescence (EDXRF) spectrum.
Number in the figure: 101 is ZnO film, and 102 is the AAO template, and 103 is the Al film, and 104 is Semiconductor substrate.
Embodiment
Below with reference to accompanying drawing embodiments of the present invention are described.In the description of back, identical Reference numeral is represented identical assembly, and it is repeated in this description omission.
Fig. 1 is the structural representation of luminescent device.At first select suitable substrate 104 zones, the mode by physical sputtering or vacuum evaporation forms 103 zones, its height
hCan control by the time of control sputter or evaporation.Utilize on 103 bases twice in the oxalic acid solution electrochemical oxidation reactions and the water-bath in the hypophosphorous acid bichromate solution add thermosetting 102 structures, its height
HAnd pore size
Φ 1Can regulate and control by regulating water-bath heating time and solution concentration.Afterwards this structure is placed in the reaction chamber of atomic layer deposition technology, under 150-200 ℃, react, and feed diethyl zinc/N by control
2Purge/deionized water/N
2This reaction cycle number of times of purge is realized 101 layers thickness and the control of conductivity, and 101 different layer thicknesses can obtain different apertures
Φ 2Thereby, realize the adjustable spectrum of luminescence generated by light.
Fig. 2 is the sample surfaces shape appearance figure that has provided the usefulness method for preparing that characterizes with scanning electron microscopy (SEM).The figure on the left side is the AAO template of ZnO of not growing, and the figure on the right is the AAO template figure of the thick ZnO film of 10nm of having grown.
Fig. 3 is different pore sizes
Φ 1AAO template growth different-thickness ZnO film after photoluminescence spectra, employing be the He-Cd laser of 325nm.
Fig. 4 is the element energy dispersion spectrum (EDX) at the thick ZnO film sample of the AAO of pore size 40nm template growth 10nm.
Above-described embodiment is of the present invention giving an example, although disclose most preferred embodiment of the present invention and accompanying drawing for the purpose of illustration, but it will be appreciated by those skilled in the art that: without departing from the spirit and scope of the invention and the appended claims, various replacements, variation and modification all are possible.Therefore, the present invention should not be limited to most preferred embodiment and the disclosed content of accompanying drawing.
Claims (4)
1. a loose structure luminescent device is characterized in that it being the luminescent device that adopts zinc oxide modulating anode aluminium oxide photoluminescence spectrum to make; Wherein, zinc oxide adopts the deposit of atomic layer deposition technology to obtain, and zinc oxide anodised aluminium and zinc oxide contact, and anodised aluminium can directly obtain from the growth of aluminium film, perhaps the aluminium film is placed on the various dissimilar Semiconductor substrate to obtain.
2. loose structure luminescent device according to claim 1 is characterized in that described semiconductor substrate materials is the silicon of different crystal orientations, perhaps germanium, GaAs or indium phosphide.
3. the preparation method of loose structure luminescent device according to claim 1 is characterized in that concrete steps are:
(1) at first prepare the aluminium backing material of luminescent device with the technology of physical sputtering or vacuum evaporated aluminium,
(2) adopt oxalic acid solution as electrolyte, substrate is anode, and gold or graphite are negative pole;
(3) add 20-80V voltage, carry out the anodic oxidation reactions first time;
(4) phosphoric acid of usefulness suitable temperature and chromic acid mixed solution water-bath heated substrate are 30-300 minute;
(5) clean substrate with deionized water;
(6) water-bath changes 2-10 minute into heating time in repeating step (the 3)-step (4), step (4);
(7) substrate for preparing is placed the atomic layer deposition reactions chamber, when the question response chamber reached 0.3-2 Torr, the operating pressure of reaction chamber remained on 2-5 torr, and ALT pulse formula ground feeds Zn source and deionized water, and inert gas N is used in two provenance pulses respectively
2Separate the accessory substance in the purge course of reaction and unnecessary gas, the ZnO layer of an ALD growth cycle of formation; Wherein, the ALD burst length that forms 1 the needed Zn of cycle ZnO layer source is 0.2-2 s, inert gas N
2The purge time is 1-5 s; The deionized water burst length is 0.2-2.0 s, inert gas N
2The purge time is 0.5-5.0 s, reacts under 150-200 ℃, controls thickness and the conductivity of zinc oxide by the growth cycle N that changes ZnO.
4. the preparation method of loose structure luminescent device according to claim 3 is characterized in that employing diethyl zinc source, Zn source.
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| CN201310133708XA CN103199162A (en) | 2013-04-17 | 2013-04-17 | Method of manufacturing anodized alumine photoinduced emission spectrum device with zinc oxide |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080152941A1 (en) * | 2006-12-25 | 2008-06-26 | Fujifilm Corporation | Microstructure and method of manufacturing the same |
| CN102041539A (en) * | 2011-01-07 | 2011-05-04 | 北京大学 | GaN-based photonic crystal template and preparation method thereof |
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- 2013-04-17 CN CN201310133708XA patent/CN103199162A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080152941A1 (en) * | 2006-12-25 | 2008-06-26 | Fujifilm Corporation | Microstructure and method of manufacturing the same |
| CN102041539A (en) * | 2011-01-07 | 2011-05-04 | 北京大学 | GaN-based photonic crystal template and preparation method thereof |
Non-Patent Citations (2)
| Title |
|---|
| 石明吉 等: "脉冲激光沉积法在多孔铝衬底上生长的ZnO薄膜的结构与光学性质", 《发光学报》 * |
| 石明吉 等: "脉冲激光沉积法在多孔铝衬底上生长的ZnO薄膜的结构与光学性质", 《发光学报》, vol. 27, no. 5, 31 October 2006 (2006-10-31), pages 755 - 760 * |
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Application publication date: 20130710 |