A kind of reaction and plasma spraying prepares the method for boron carbide coating
Technical field
The present invention relates to the plasma spraying technology field, be specifically related to the method that a kind of gas-phase reaction plasma spraying prepares boron carbide coating.
Background technology
At present, the low-temperature plasma fine machining method is the gordian technique of material micro-nano processing, it is the basis of technologies of preparing such as microelectronics, photoelectron, micromechanics, micro-optic, particularly in the super large-scale integration manufacturing process, there is nearly 1/3rd operation to finish by means of plasma process, as plasma foil deposition, plasma etching and removing of photoresist by plasma etc.Wherein plasma etching is one of technical process of most critical, is to realize that the Micropicture of super large-scale integration in producing with high fidelity transfer to irreplaceable technology on the silicon chip from Lithographic template.
In etching process, owing to there is a large amount of living radicals with severe corrosive, the internal surface in their article on plasma etching technics chambeies also can produce corrosive nature, causes pollution, influences etching effect, and is lost efficacy in the etching technics chamber.The plasma etching equipment of the early stage nineties takes place to add Al at the aluminum substrate layer under the situation in source at smaller power and single plasma body
2O
3Coating just can satisfy plasma body to the etch damage in etching technics chamber.Enter into 300mm equipment, along with plasma power is increasing, plasma body is also increasing to the damage of etching technics chamber wall, makes in the following problem of the easy generation of the process of etching: (1) particle; (2) process cavity wall disbonding causes plasma body directly and aluminum substrate is had an effect; (3) Al
2O
3The life-span of component is subjected to more high-power restriction.So need to seek a kind of new approach the etching technics inner cavity surface is carried out modification, satisfy the needs of etching technics.
Studies show that Y
2O
3Coating has good protective action to the etching technics chamber.With Al
2O
3Compare Y
2O
3Chemical property highly stable, have excellent anti-plasma etching performance, and and CF be the reaction product YF that gas generates
3Steam forces down, and is difficult to disperse as particle.At present, with Y
2O
3Powder utilizes the air plasma spraying method as spray material, prepares the Y of single structure at the etching technics inner cavity surface
2O
3Corrosion-resistant finishes is a kind of method that generally adopts.
Than Y
2O
3, norbide (B
4C) then have more potentiality.Have a series of good physical such as superhard, high-melting-point, density be low.Also have excellent chemical stability simultaneously, can resist sour, caustic corrosion, and not with most of molten metals wetting with have an effect.Therefore norbide is again good corrosion resistant material, is used for the processing of acid-and base-resisting component.Because boron carbide material and semiconductor technology is compatible good, therefore be suitable as very much the corrosion-resistant finishes of semi-conductor component.
Preparation B
4The main method of C coating has: chemical vapor deposition (CVD), reaction sintering and plasma spraying etc.Air plasma spraying is to use N
2, Ar, H
2And He etc. produces plasma high temperature and high speed jet as ion gas through ionization, and input material fusing or fusion are ejected into the method that working-surface forms coating.Plasma arc extreme temperatures is wherein enough melted all high-melting-point ceramic powder.In the air plasma spraying technology, atmosphere surrounding can have influence significantly to the final performance of coating.The selection principle of gas mainly is to consider practicality and economy.Concrete requirement is: (1) stable performance, not with spray material generation adverse reaction; (2) the heat content height is suitable for refractory material, but does not answer too high and the ablation nozzle; (3) should selection and electrode or nozzle the gas of chemical action does not take place; (4) with low cost, supply is convenient.
Plasma spraying because have jet temperature height, coat-thickness is controlled, bonding strength is high and characteristics such as easy to operate, is preparation B
4The effective ways of C coating.But, B
4There are problems such as high temperature oxidation and gasification in C in spraying process, air plasma spraying can not be prepared well behaved B
4The C coating.There is research to adopt a kind of extraordinary resist technology, under protection of inert gas, carries out plasma spraying, though obtained B
4The C coating, but still there is the small part oxidation products in the coating.Therefore need seeking more suitably, method prepares B
4The C ceramic coating of anti-the erosion.
Summary of the invention
The invention provides a kind of making method of boron carbide coating of abrasion resistant and corrosion resistant performance.
Concrete technical scheme is realized by following steps:
A kind of reaction and plasma spraying prepares the method for boron carbide coating, comprises the steps:
Step (1) is chosen boron carbide powder, and boron carbide powder is sent into plasma spraying equipment;
Step (2) is carried out pre-treatment to the substrate surface that is sprayed;
Step (3) is chosen Ar and CH
4For spraying gas, carry out plasma spraying by described plasma spraying equipment at described substrate surface, prepare boron carbide coating.
In such scheme, the granularity of described boron carbide powder is 5-40 μ m.
In such scheme, in the described step (2) substrate surface that is sprayed is carried out pre-treatment, specifically comprise the steps: the substrate surface that is sprayed is carried out sandblasting, and clean with acetone.
In such scheme, the sand-blast material that described sandblasting is adopted is white fused alumina, and sand size is 50-100 μ m.
In such scheme, Ar flow 40-90L/min, CH
4Flow 5-20L/min.
In such scheme, the arc voltage 40-50V of described plasma spraying equipment, flame current 800-900A, powder feed rate 15-100g/min, spray distance 80-135mm, 50 °-90 ° of powder feeding angles.
The present invention uses methane gas (CH
4) replace hydrogen to spray as back work gas, have reducing property protection B after the methane gas ionization
4C is not oxidized, simultaneously because contain C in the gas, by itself and B
4The reaction of C can reduce even prevent B
4C C at high temperature runs off.The B that obtained performance is good
4The C coating.
Embodiment
Below in conjunction with embodiment the present invention is further described in detail, the embodiment that provides is only in order to illustrate the present invention, rather than in order to limit the scope of the invention.
Present embodiment provides a kind of gas-phase reaction plasma spraying to prepare the method for boron carbide coating, comprises the steps:
(1) selects B
4C powder, size range are 5-40 μ m, have splendid flowability.
(2) the etching technics cavity wall to aluminium base carries out sandblasting, and sand-blast material is white fused alumina, and size range is 50-100 μ m, and cleans with acetone.
(3) adopt Sluzer Metco 9MC plasma spraying equipment to carry out plasma spraying, spray gun type 9MB.The spraying atmosphere surrounding is Ar/CH
4: Ar flow 40-90L/min, CH
4Flow 5-20L/min.50 °-90 ° of arc voltage 40-50V, flame current 800-900A, powder feed rate 15-100g/min, spray distance 80-135mm, powder feeding angles.In spraying process, adopt air blowing method or recirculated water cooling method to cool off matrix.When adopting air blowing method cooling matrix, the flow of cooling gas is 100-2000L/min; When adopting recirculated water cooling method cooling matrix, the flow of water coolant is 10-500L/min.
The above only is preferred embodiment of the present invention, so all equivalences of doing according to the described structure of patent claim of the present invention, feature and principle change or modify, is included in the patent claim of the present invention.