CN103187307A - Thin film transistor using multiple active channel layers - Google Patents
Thin film transistor using multiple active channel layers Download PDFInfo
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- CN103187307A CN103187307A CN 201310049112 CN201310049112A CN103187307A CN 103187307 A CN103187307 A CN 103187307A CN 201310049112 CN201310049112 CN 201310049112 CN 201310049112 A CN201310049112 A CN 201310049112A CN 103187307 A CN103187307 A CN 103187307A
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- 239000000203 mixture Substances 0.000 claims abstract description 45
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- 239000011701 zinc Substances 0.000 claims abstract description 24
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- 229910052793 cadmium Inorganic materials 0.000 claims abstract description 18
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 18
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 18
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- 238000000151 deposition Methods 0.000 claims description 43
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- 238000004544 sputter deposition Methods 0.000 claims 3
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- 239000010703 silicon Substances 0.000 description 17
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
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Abstract
Embodiments disclosed in the invention roughly relate to a TFT and a method of manufacturing TFT. In the TFT, active channel layers carry current between a source electrode and a drain electrode. Through adjusting composition of an active channel, current can be controlled. The active channel comprises three layers, that is, a grid control layer, a body layer, and an interface control layer. An individual layer can have different composition. In addition, each of the grid control layer, the body layer, and the interface control layer can comprise a plurality of layers, and the plurality of layers have different composition. Composition of each layer of the active channel comprises oxygen, nitrogen, and one or more elements selected from zinc, indium, cadmium, tin, gallium and combination of the above elements. Through changing composition of the layers, migration rate, carrier concentration and electric conductivity of each layer can be controlled, so that the TFT with expected properties can be manufactured.
Description
The application is that to be called " Thin Film Transistors Using Multiple Active Channel Layers ", international application no be that PCT/US2009/047966, application number are dividing an application of 200980125524.0 patent application for the name submitted on June 19th, 2009.
Technical field
The embodiment that this paper discloses is haply about thin-film transistor (TFT) and the method for making TFT.
Background technology
Interest for tft array is very high at present, and this is because these devices can be used in the active matrix liquid crystal display (LCD) that is usually used in computer and this type of TV flat panel.LCD also can comprise the light-emitting diode (LED) for backlight.Moreover Organic Light Emitting Diode (OLED) has been used for Active Matrix Display, and these OLED need TFT to solve the active property (activity) of display.
Become the critical piece of flat panel display industry with the TFT of amorphous silicon manufacturing.Unfortunately, amorphous silicon has its restriction, for example low mobility (mobility).The needed mobility of OLED is at least 10 times that amorphous silicon can be reached.In addition, because the OLED display is the device of current drives, the OLED display is for threshold voltage shift (V
ThShift) be more responsive.Under high electric current or high bias voltage, the threshold voltage shift of non-crystalline silicon tft is problem to be solved.On the other hand, polysilicon has the mobility higher than amorphous silicon.Polysilicon is crystallization, and this causes not good local heterogeneity.Need complex annealing process owing to make polysilicon film, it is more difficult and more expensive using polysilicon with respect to use amorphous silicon making large area display.Because the restriction of amorphous silicon, the development of OLED is slowly.
In the last few years, make transparent TFT, and wherein used zinc oxide as the active channel layer.Zinc oxide is the compound semiconductor that can grow into crystalline material under unusual low deposition temperature at various substrates (for example glass and plastics).
So this technical field is needed amorphous with high mobility or the TFT of noncrystalline active channel badly.
Summary of the invention
The embodiment that this paper discloses is haply about TFT and the method for making TFT.In TFT, the active channel layer is taken and is sent electric current between source electrode and drain electrode.By adjusting the composition of (tailor) active channel, can control electric current.Active channel can comprise three layers, i.e. grid key-course, body layer and back of the body channel interface key-course.The grid key-course is the layer at interface between the most close active channel and the gate dielectric or one group layer.Back of the body channel interface key-course is the layer at interface between the most close active channel and passivation or the etch stop layer or one group layer.The body layer is layer between grid key-course and back of the body channel interface key-course or one group layer.Described other layer can have different compositions.In addition, each person of grid key-course, body layer and back of the body channel interface key-course can comprise a plurality of layers, and described a plurality of layers have different the composition.The composition of each of active channel layer comprises oxygen, nitrogen and is selected from one or more element by the group that combination is formed of zinc, indium, cadmium, tin, gallium and above-mentioned element.By changing the composition between the described layer, can control mobility, carrier concentration and the conductance of each layer, the TFT that has desired character with manufacturing.In addition, by changing the composition between the described layer, can control between band gap between the described layer or electric field and the described layer and the interface of described layer and gate dielectric and passivation layer or cap layer, the TFT that has desired character with manufacturing.
In one embodiment, a kind of TFT comprises: gate dielectric is arranged on gate electrode and substrate top; And active channel, be couple to described gate dielectric and relative with described substrate.Described active channel comprises one or more grid key-course, and described one or more grid key-course comprises oxygen, nitrogen and is selected from one or more element by zinc, indium, tin, cadmium and group that gallium is formed.Described one or more grid key-course has first and forms.In described one or more grid key-course at least one contacts with described gate dielectric.Described active channel also comprises one or more body layer, and described one or more body layer contacts with in described one or more grid key-course at least one.Described one or more body layer comprises oxygen, nitrogen and is selected from one or more element by zinc, indium, tin, cadmium and group that gallium is formed.Described one or more body layer has second to be formed, and described second composition is different from described first and forms.Described active channel also comprises one or more back of the body channel interface key-course, and described one or more back of the body channel interface key-course contacts with in described one or more body layer at least one.Described one or more back of the body channel interface key-course comprises oxygen, nitrogen and is selected from one or more element by zinc, indium, tin, cadmium and group that gallium is formed.Described one or more back of the body channel interface key-course has the 3rd composition, and described the 3rd composition is different from one or more in described first composition and described second composition.Described TFT also comprises source electrode and drain electrode, and described source electrode and drain electrode are couple at least one in described one or more back of the body channel interface key-course.
In another embodiment, the present invention discloses the manufacture method of a kind of TFT.Described method comprises: the deposition gate dielectric is in gate electrode and substrate top; And form active channel in described gate dielectric top.The step of described formation comprises: deposit one or more grid key-course in described gate dielectric top, described one or more grid key-course comprises oxygen, nitrogen and is selected from by one or more element of zinc, indium, tin, cadmium and group that gallium is formed and has first and forms.In described one or more grid key-course at least one contacts with described gate dielectric.The step of described formation also comprises: deposit one or more body layer, described one or more body layer contacts with in described one or more grid key-course at least one.Described one or more body layer comprises oxygen, nitrogen and is selected from one or more element by zinc, indium, tin, cadmium and group that gallium is formed.Described one or more body layer has second to be formed, and described second composition is different from described first and forms.The step of described formation also comprises: deposit one or more back of the body channel interface key-course, described one or more back of the body channel interface key-course contacts with in described one or more body layer at least one.Described one or more back of the body channel interface key-course comprises oxygen, nitrogen and is selected from one or more element by zinc, indium, tin, cadmium and group that gallium is formed.Described one or more back of the body channel interface key-course has the 3rd composition, and described the 3rd composition is different from one or more in described first composition and described second composition.Described method also comprises: depositing conducting layer is in the superiors of described one or more back of the body channel interface key-course; And the described conductive layer of patterning, carry on the back the superiors of channel interface key-course to define source electrode and drain electrode and to expose described one or more.
Description of drawings
Aforementioned feature of the present invention, detailed description can at length be understood by reference embodiment, and some of them embodiment illustrates in the accompanying drawings.Yet, it should be noted that accompanying drawing only illustrates exemplary embodiments of the present invention, and therefore can not limit the scope of the invention that the present invention allows other equivalent embodiment.
Figure 1A-1G be according to an embodiment of the invention TFT100 in the schematic cross section of each fabrication stage.
Fig. 2 is the schematic cross section according to the active channel 200 of an embodiment.
Fig. 3 is the schematic cross section according to the active channel 300 of another embodiment.
In order to promote to understand, if feasible, then in graphic, use the components identical symbol to censure components identical.Should know that the element that discloses among embodiment can be used among other embodiment valuably, and need not give unnecessary details.
Embodiment
The embodiment that this paper discusses can be in that (AKT America company carries out in Applied Materials's (Applied Materials, subsidiary Inc.)) manufacturing in santa clara city and physical vapor deposition (PVD) equipment that sells by AKT America company.Can understand, method described herein can be carried out in miscellaneous equipment, and described miscellaneous equipment comprises the equipment of being made and being sold by other manufacturer.The embodiment of this paper discussion is not limited in PVD, but can use other deposition process to implement, described other deposition process includes but not limited to chemical vapor deposition (CVD), plasma-enhanced CVD (PECVD), pulse type laser deposition, spin-coating gel deposition and ald (ALD).
Figure 1A-1G be according to an embodiment of the invention TFT100 in the schematic cross section of each fabrication stage.TFT can comprise substrate 102.In one embodiment, substrate 102 can comprise glass.In another embodiment, substrate 102 can comprise polymer.In another embodiment, substrate 102 can comprise plastics.In another embodiment, substrate 102 can comprise metal.In another embodiment, substrate 102 can comprise stainless steel substrates.
Can deposit gate dielectric 106 on gate electrode 104.Gate dielectric 106 influences the subthreshold value amplitude of oscillation or slope and the threshold voltage of TFT.Be TFT (TFT that namely has silicon based semiconductor layer (such as amorphous silicon)) for silicon, gate dielectric 106 can not comprise silica, and this is because V
ThAway from the grid voltage of zero volt, this can make TFT usefulness not good.But, for metal oxide TFT, be found to silica and can be used as effective gate dielectric 106.Oxygen in the silica can not change metal oxide layer nocuously, so TFT can not lose efficacy (fail).In one embodiment, gate dielectric 106 can comprise silicon nitride.In another embodiment, gate dielectric 106 can comprise silica.In another embodiment, gate dielectric 106 can comprise silicon oxynitride.In another embodiment, gate dielectric 106 can comprise Al
2O
3Can deposit gate dielectric 106 by the deposition technique of knowing, the described deposition technique of knowing comprises PECVD.In one embodiment, can deposit gate dielectric 106 by PVD.
After depositing gate dielectric 106, can handle gate dielectric 106.A kind of technology of handling gate dielectric relates to gate dielectric 106 is exposed to plasma 108, with the surface of passivation gate dielectric 106.In one embodiment, gate dielectric 106 can be exposed to and have oxygen-containing gas (such as N
2O or O
2) plasma.In another embodiment, can gate dielectric 106 is exposed to contain oxygen plasma after, gate dielectric 106 be exposed to contain H
2, Ar, N
2Or PH
3Plasma.In another embodiment, can gate dielectric 106 be exposed to oxygen-containing gas (such as N not existing under the plasma
2O or O
2).In another embodiment, can be after gate dielectric 106 be exposed to oxygen-containing gas, gate dielectric 106 is exposed to contains oxygen plasma.In another embodiment, except handling gate dielectric 106 or replace processing gate dielectric 106, can silicon oxide layer deposited on gate dielectric 106.
After handling gate dielectric 106, can depositing semiconductor layers 110 on gate dielectric 106.Semiconductor layer 110 will be the material that comprises active channel in the final TFT structure.Semiconductor layer 110 can comprise oxygen, nitrogen and be selected from one or more element by the group that combination is formed of zinc, gallium, cadmium, indium, tin and above-mentioned element.In one embodiment, semiconductor layer 110 can comprise oxygen, nitrogen and have the s track that fills up and one or more element of the d track that fills up.In another embodiment, semiconductor layer 110 one or more element that can comprise oxygen, nitrogen and have the f track that fills up.In another embodiment, semiconductor layer 110 can comprise oxygen, nitrogen and one or more diad.In another embodiment, semiconductor layer 110 can comprise oxygen, nitrogen and one or more triad.In another embodiment, semiconductor layer 110 can comprise oxygen, nitrogen and one or more quadrivalent element.Semiconductor layer 110 can be deposited as amorphous layer, crystallizing layer or the two combination.
The example of semiconductor layer 110 includes following: ZnO
xN
y, SnO
xN
y, InO
xN
y, CdO
xN
y, GaO
xN
y, ZnSnO
xN
y, ZnInO
xN
y, ZnCdO
xN
y, ZnGaO
xN
y, SnInO
xN
y, SnCdO
xN
y, SnGaO
xN
y, InCdO
xN
y, InGaO
xN
y, CdGaO
xN
y, ZnSnInO
xN
y, ZnSnCdO
xN
y, ZnSnGaO
xN
y, ZnInCdO
xN
y, ZnInGaO
xN
y, ZnCdGaO
xN
y, SnInCdO
xN
y, SnInGaO
xN
y, SnCdGaO
xN
y, InCdGaO
xN
y, ZnSnInCdO
xN
y, ZnSnInGaO
xN
y, ZnInCdGaO
xN
yAnd SnInCdGaO
xN
yThe example of semiconductor layer 110 includes following dopant material: ZnO
xN
y: Al, ZnO
xN
y: Sn, SnO
xN
y: Al, InO
xN
y: Al, InO
xN
y: Sn, CdO
xN
y: Al, CdO
xN
y: Sn, GaO
xN
y: Al, GaO
xN
y: Sn, ZnSnO
xN
y: Al, ZnInO
xN
y: Al, ZnInO
xN
y: Sn, ZnCdO
xN
y: Al, ZnCdO
xN
y: Sn, ZnGaO
xN
y: Al, ZnGaO
xN
y: Sn, SnInO
xN
y: Al, SnCdO
xN
y: Al, SnGaO
xN
y: Al, InCdO
xN
y: Al, InCdO
xN
y: Sn, InGaO
xN
y: Al, InGaO
xN
y: Sn, CdGaO
xN
y: Al, CdGaO
xN
y: Sn, ZnSnInO
xN
y: Al, ZnSnCdO
xN
y: Al, ZnSnGaO
xN
y: Al, ZnInCdO
xN
y: Al, ZnInCdO
xN
y: Sn, ZnInGaO
xN
y: Al, ZnInGaO
xN
y: Sn, ZnCdGaO
xN
y: Al, ZnCdGaO
xN
y: Sn, SnInCdO
xN
y: Al, SnInGaO
xN
y: Al, SnCdGaO
xN
y: Al, InCdGaO
xN
y: Al, InCdGaO
xN
y: Sn, ZnSnInCdO
xN
y: Al, ZnSnInGaO
xN
y: Al, ZnInCdGaO
xN
y: Al, ZnInCdGaO
xN
y: Sn, and SnInCdGaO
xN
y: Al.
Can come depositing semiconductor layers 110 by sputter.In one embodiment, sputtering target comprises metal, for example the combination of zinc, gallium, cadmium, indium, tin or above-mentioned metal.Sputtering target can comprise dopant extraly.Oxygen-containing gas and nitrogenous gas are imported in the chamber to come depositing semiconductor layers 110 by reactive sputtering.In one embodiment, nitrogenous gas comprises N
2In another embodiment, nitrogenous gas comprises N
2O, NH
3Or the combination of above-mentioned gas.In one embodiment, oxygen-containing gas comprises O
2In another embodiment, oxygen-containing gas comprises N
2O.The nitrogen of nitrogenous gas and the oxygen of oxygen-containing gas with from the metal reaction of sputtering target, to form semi-conducting material at substrate, described semi-conducting material comprises metal, oxygen, nitrogen and optional dopant.In one embodiment, nitrogenous gas and oxygen-containing gas are gas independently.In another embodiment, nitrogenous gas comprises identical gas with oxygen-containing gas.Also can during sputter, provide extra additive (such as B
2H
6, CO
2, CO, CH
4And the combination of above-mentioned substance) to chamber.
After depositing semiconductor layers 110, can depositing conducting layer 112.In one embodiment, conductive layer 112 can comprise metal, for example the combination of aluminium, tungsten, molybdenum, chromium, tantalum and above-mentioned metal.Can use PVD to come depositing conducting layer 112.
After depositing conducting layer 112, can define source electrode 114, drain electrode 116 and active channel 118 by the part that conductive layer 112 is removed in etching.Also can remove the part of semiconductor layer 110 by etching.Though not shown, before depositing conducting layer, can above semiconductor layer 110, deposit cap layer (or etch stop layer).Etch stop layer is used for protecting during etching active channel 118 to avoid excessive plasma-exposed.
Can deposit first cap layer 120 in semiconductor layer 110 tops and active channel 118.In one embodiment, first cap layer 120 can comprise silica.In another embodiment, first cap layer 120 can comprise silicon oxynitride.In one embodiment, can deposit first cap layer 120 by PECVD.In another embodiment, can deposit first cap layer 120 by CVD.In another embodiment, first cap layer 120 can comprise carborundum.In another embodiment, first cap layer 120 can comprise amorphous carbon.
In order to deposit first cap layer 120, can be with in the silicon-containing gas introducing technology chamber.In one embodiment, silicon-containing gas can comprise SiH
4In another embodiment, silicon-containing gas can comprise TEOS.Except silicon-containing gas, also can be with N
2O, NO, NO
2, O
2, CO, CO
2, NH
3And the combination of above-mentioned gas imports.Can be at N
2The flow rate of O and silicon-containing gas for about 20:1 extremely about 40:1 with N
2O and silicon-containing gas import.Be used in silicon and be hydrogen in the conventional silicon nitride cap layer of TFT (semiconductor layer that namely comprises silicon) and nitrogen and may not have enough oxygen and come balance to hydrogen and the nitrogen effect of TFT, and therefore cause the negative bias of threshold voltage to move.Can be by control SiH
4To N
2The ratio of O is adjusted the oxygen content in first cap layer 120.Oxygen content should be too not high.If the oxygen content in first cap layer 120 is too high, then can reduce conducting electric current (I significantly
On) or mobility.Elevated oxygen level can enlarge the area of strong positive charge impaired semi-conductive layer during the source electrode-drain patternization on the top layer, and this electronics that can influence under the electric field moves.Except silicon-containing gas and N
2O gas also can be with nitrogen (N
2) import.
Except silicon-containing gas and N
2O gas can be with PH
3Gas imports.Hydrogen can increase the mobility of TFT.Therefore, PH
3Gas can be present in PH because of hydrogen
3In the gas and increase the mobility of TFT.Yet hydrogen can make the threshold voltage shift of TFT and become more negative.Therefore, must be equilibrated at the amount of the hydrogen that exists in the chamber between first cap layer, 120 depositional stages, to meet user's demand.For example, if the user is ready to sacrifice threshold voltage, then can reach higher mobility.In one embodiment, PH
3The ratio of total hydrogen content of the gas of gas and introducing technology chamber can for about 1:190 to about 1:200.When first cap layer 120 of deposited carbon-containing, the gas that can be imported into comprises N
2, H
2And carbonaceous gas is (such as C
2H
2).
After depositing first cap layer 120, can handle first cap layer 120.A kind of technology of handling first cap layer relates to first cap layer 120 is exposed to plasma, with the surface of passivation first cap layer 120.In one embodiment, first cap layer 120 can be exposed to and have oxygen-containing gas (such as N
2O or O
2) plasma.In another embodiment, can first cap layer 120 is exposed to contain oxygen plasma after, first cap layer 120 be exposed to contain H
2, Ar, N
2Or PH
3Plasma.In another embodiment, can not exist under the plasma, first cap layer 120 is being exposed to oxygen-containing gas (such as N
2O, He, H
2, N
2, O
2Or the combination of above-mentioned gas).In another embodiment, can be after first cap layer 120 be exposed to oxygen-containing gas, first cap layer 120 is exposed to contains oxygen plasma.
Can deposit second cap layer 122 in first cap layer, 120 tops.In one embodiment, second cap layer 122 has the composition that is different from first cap layer 120.In another embodiment, second cap layer 122 is identical with the composition of first cap layer 120.When the composition of first cap layer 120 and second cap layer 122 is identical, can in single deposition step, deposit first cap layer 120 and second cap layer 122.In one embodiment, first cap layer 120 and second cap layer 122 are included in the simple layer that deposits in the single processing step, described simple layer has the composition gradient that changes in layer, thus make with active channel 118 in the oxygen content at the interface of semiconductor layer 110 higher than the oxygen content of remainder of layer.With respect to the gross thickness of first cap layer 120 and second cap layer 122, first cap layer 120 can be about 5% to about 20% of gross thickness.In one embodiment, the thickness of first cap layer 120 can for about 75 dusts to about 125 dusts.
After depositing second cap layer 122, can handle second cap layer 122.A kind of technology of handling second cap layer relates to second cap layer 122 is exposed to plasma, with the surface of passivation second cap layer 122.In one embodiment, second cap layer 122 can be exposed to and have oxygen-containing gas (such as N
2O or O
2) plasma.In another embodiment, can second cap layer 122 is exposed to contain oxygen plasma after, second cap layer 122 be exposed to contain H
2, Ar, N
2Or PH
3Plasma.In another embodiment, can not exist under the plasma, second cap layer 122 is being exposed to oxygen-containing gas (such as N
2O or O
2).In another embodiment, can be after second cap layer 122 be exposed to oxygen-containing gas, second cap layer 122 is exposed to contains oxygen plasma.
Shown in Fig. 1 G, active channel 118 connects with gate dielectric 106, first cap layer 120, source electrode 114 and drain electrode 116 faces.Therefore, owing to various layers different carrier concentrations, mobility, band gap (band gap), conductance etc., active channel 118 must be suitable for very in many ways.If active channel is silicon system, then highly doped silicon can be used to improve the contact resistance between active layer and the metal electrode, rather than only uses silicon.
Surprised discovery be when active raceway groove comprises oxygen, nitrogen and be selected from one or more element by zinc, cadmium, tin, indium and group that gallium is formed, can adjust the characteristic of active channel to meet user's demand.For example, active channel can comprise a plurality of layers (rather than having only one deck), wherein each layer has different semiconductor property (for example carrier concentration, mobility, band gap, conductance and composition), and each layer of described layer has oxygen, nitrogen and be selected from one or more element by zinc, cadmium, tin, indium and group that gallium is formed.In one embodiment, be used for a plurality of layers of active channel even can have different elements.A plurality of layers purpose is in order to regulate interface between active layer and the gate dielectric and the interface between active layer and the cap layer.Adjust the electromotive force of setting up in the active layer for a plurality of layers, to reach best possible usefulness.A plurality of active layers can be used for setting up potential barrier, with the diffusion that stops undesirable species or avoid adhering to of undesirable process conditions.
Fig. 2 is the schematic cross section according to the active channel 200 of an embodiment.Active channel 200 comprises three layers, i.e. grid key-course 202 (being adjacent to gate dielectric), body layer 204 and back of the body channel interface key-course 206 (being adjacent to source electrode, drain electrode and cap layer).Each person of grid key-course 202, body layer 204 and back of the body channel interface key-course 206 can have different semiconductor property (for example carrier concentration, mobility, band gap, crystalline orientation, crystal area proportion or chemical composition).Change of properties between the described layer can be unexpected or progressive.In addition, in one embodiment, the thickness of described layer can not be consistent.
Grid key-course 202 is will flow through therebetween layers of most of electric current ideally.So the electric current of the grid key-course 202 of flowing through is much larger than the electric current of body layer 204 with back of the body channel interface key-course 206 of flowing through.In one embodiment, grid key-course 202 can have about 10 dusts to the thickness of about 100 dusts.In another embodiment, grid key-course 202 can have about 50 dusts to the thickness of about 100 dusts.Owing to connect with the gate dielectric aspect, grid key-course 202 can have high mobility with respect to body layer 204 and Interface Control layer 206.In one embodiment, grid key-course 202 can comprise simple layer.In one embodiment, single grid key-course 202 can classification gradually in layer, thereby makes composition, concentration, mobility, band gap, crystalline orientation or crystal area proportion change in layer.This variation can be by utilizing different additives gas or utilizing the different various process gas scale of constructions to realize during deposition grid key-course 202 during the deposition grid key-course 202.
In another embodiment, grid key-course 202 can be made of a plurality of layers.Described a plurality of layer can have different semiconductor property (for example carrier concentration, mobility, band gap, crystalline orientation, crystal area proportion or chemical composition) and thickness not even together.High or low conductance layer can be used as wherein one deck of the grid key-course 202 of multilayer.Layer with high or low carrier concentration can be used as wherein one deck of the grid key-course 202 of multilayer.Layer with different band gaps can be used as wherein one deck of the grid key-course 202 of multilayer.
Before, can nurse one's health (season) sputtering target a period of time deposition grid key-course 202 (no matter being simple layer or sandwich construction).In one embodiment, this time can be about 30 seconds.Can nurse one's health target by providing process gas (for example argon, nitrogen and ammonia) to carry DC power to reach Preset Time to target simultaneously.In one embodiment, the ratio of argon and ammonia can be about 12:1.In another embodiment, the ratio of nitrogen and ammonia can be about 50:1.In another embodiment, the ratio of argon and nitrogen can be about 12:5.Can be with the temperature maintenance of processing chamber at about 100 ℃ to about 300 ℃.In another embodiment, can be with the temperature maintenance of processing chamber at about 180 ℃ to about 200 ℃.
After deposition grid key-course 202, can lithosomic body layer 204.Body layer 204 can have low conductivity along the raceway groove between source electrode and the drain electrode, and body layer 204 has high conductivity between grid key-course and source electrode and drain electrode.Can have low partial charge in the body layer 204 and capture (charge trapping).Body layer 204 can be deposited as simple layer.In one embodiment, can be with body layer 204 classification and make mobility, composition, carrier concentration, conductance or band gap in layer, change gradually.In another embodiment, body layer 204 can comprise a plurality of layers.In one embodiment, wherein one deck of the body layer of multilayer can have high or low conductance, thereby makes the body layer of described multilayer replace (i.e. height-low-high or low-Gao-low conductor layer) between height and low conductivity.In another embodiment, wherein one deck of the body layer of multilayer can have high or low carrier concentration (i.e. height-low-high or low-Gao-low carrier concentration layer).In another embodiment, wherein one deck of the body layer of multilayer can have different band gaps.In one embodiment, body layer 204 can have about 200 dusts to the gross thickness of about 300 dusts.When body layer 204 comprised a plurality of layers, described a plurality of layers can have different semiconductor property (for example carrier concentration, mobility, band gap, crystalline orientation, crystal area proportion or chemical composition) and thickness not even together.
After lithosomic body layer 204, can deposit back of the body channel interface key-course 206.In one embodiment, back of the body channel interface key-course 206 can have about 50 dusts to the thickness of about 200 dusts.Back of the body channel interface key-course 206 can cause a spot of capturing (trapping) between channel material and passivation or cap layer.Low conductivity in the back of the body channel interface key-course 206 causes low conductance between source electrode and drain electrode, and the low conductivity in the back of the body channel interface key-course 206 is causing high conductance between grid key-course 202 and source electrode and drain electrode.A spot of partial charge is captured and is occurred in the back of the body channel interface key-course 206, and between Interface Control layer 206 and body layer 204.But back of the body channel interface key-course 206 also protective layer 204 and grid key-course 202 avoids the diffusion of any undesirable species.
Back of the body channel interface key-course 206 can comprise simple layer.When back of the body channel interface key-course 206 is simple layer, the classification gradually of described layer.In one embodiment, back of the body channel interface key-course 206 can comprise a plurality of layers.Described a plurality of layer can have different semiconductor property (for example carrier concentration, mobility, band gap, crystalline orientation, crystal area proportion or chemical composition) and thickness not even together.When using a plurality of layers, can high or low conductance layer or the layer that will have the layer of high or low carrier concentration or have different band gaps be plugged in the sandwich construction of carrying on the back channel interface key-course 206.Can use the additives gas that is different from body layer 204 or grid key-course 202 to come last one deck of the back of the body channel interface key-course 206 (when being deposited as multilayer) of deposit multilayer.Last one deck can have high or low mobility, carrier concentration or band gap.In one embodiment, back of the body channel interface key-course 206 can partially or even wholly be transformed into contact with drain electrode regional of source electrode and the zone at active channel in have different film character.
Fig. 3 is the schematic cross section according to the active channel 300 of another embodiment.The active channel 300 of Fig. 3 has three layer 302,304,306 (comprising the grid key-course), three layer 308,310,312 (occlusion body layer) and three layer 314,316,318 (comprising back of the body channel interface key-course).Can understand, be three layers though figure goes up each person who shows grid key-course, body layer and back of the body channel interface key-course, can have more or less layer.Between the described layer, can have different thickness, carrier concentration, mobility, band gap, crystalline orientation, crystal area proportion or chemical composition.
Table one
| Period | Power | Time | Argon | N 2 | N 2O | NH 3 |
| ? | W | sec | sccm | sccm | sccm | sccm |
| A | 500 | 30 | 120 | 500 | 0 | 10 |
| B | 10 | 12 | 120 | 500 | 0 | 0 |
| 1 | 500 | 30 | 120 | 500 | 0 | 0 |
| 2 | 500 | 36 | 120 | 500 | 40 | 0 |
| 3 | 500 | 24 | 120 | 500 | 0 | 0 |
| 4 | 500 | 30 | 120 | 500 | 30 | 0 |
| 5 | 500 | 24 | 120 | 500 | 0 | 0 |
| 6 | 500 | 300 | 120 | 500 | 30 | 0 |
| 7 | 1000 | 24 | 120 | 500 | 30 | 0 |
| 8 | 1000 | 24 | 120 | 500 | 40 | 0 |
| 9 | 1000 | 24 | 120 | 500 | 50 | 0 |
Table one shows the process conditions in order to the active channel that forms multilayer according to an embodiment.All layers are to deposit by the zinc target that DC sputter in the chamber with about 70,000 cubic centimetres volume is doped the Sn of 2.2 atomic percents and has about 4,650 square centimeters area.At period A, sputtering target is nursed one's health (season).At period B, gas from the conditioning step transitions in order to deposit the deposition step of grid key-course.Period 1-5 is used for deposition grid key-course.Period 6 is used for the body layer, and period 7-9 is used for back of the body channel interface key-course.
In the period 1, the initial layers of grid key-course is deposited.Then, in the period 2, by also nitrous oxide being imported except nitrogen and argon gas body, the high oxidation layer is deposited.Then, in the period 3, nitrous oxide stops, and argon and the lasting inflow of nitrogen.In the period 4, nitrous oxide is imported into again, but to be different from the lower flow rate of period 3.Therefore, though have than layer higher oxidation in period 1 and 3 depositions at the layer of periods 4 deposition, oxidation is lower than the period 2.In the period 5, transition zone is deposited to carry out the transition to the body layer.
After the lithosomic body layer, back of the body channel interface key-course is deposited.During deposition back of the body channel interface key-course, the nitrous oxide that provides is increased to set up the oxidation gradient gradually in layer.In addition, the power that applies is the twice of the power that applies between grid key-course and body layer depositional stage.
Table two
| Period | Power | Time | Argon | N 2 | N 2O | NH 3 |
| ? | W | sec | sccm | sccm | sccm | sccm |
| 1 | 500 | 30 | 120 | 500 | 0 | 0 |
| 2 | 500 | 36 | 120 | 500 | 13 | 0 |
| 3 | 500 | 18 | 120 | 500 | 0 | 0 |
| 4 | 500 | 18 | 120 | 500 | 30 | 0 |
| 5 | 1500 | 12 | 120 | 500 | 30 | 0 |
| 6 | 800 | 18 | 120 | 500 | 30 | 0 |
| 7 | 500 | 300 | 120 | 500 | 30 | 0 |
| 8 | 1000 | 24 | 120 | 500 | 30 | 0 |
| 9 | 1000 | 24 | 120 | 500 | 40 | 0 |
| 10 | 1000 | 24 | 120 | 500 | 50 | 0 |
| 11 | 1000 | 24 | 120 | 500 | 60 | 0 |
| 12 | 1000 | 24 | 120 | 500 | 70 | 0 |
| 13 | 500 | 60 | 120 | 500 | 0 | 0 |
Table two shows the process conditions in order to the active channel that forms multilayer according to another embodiment.All layers are to deposit by the zinc target that DC sputter in the chamber with about 70,000 cubic centimetres volume is doped the Sn of 2.2 atomic percents and has about 4,650 square centimeters area.Period 1-6 is used for deposition grid key-course.Period 7 is used for the body layer, and period 8-13 is used for back of the body channel interface key-course.
In the period 1, the initial layers of grid key-course is deposited.Then, in the period 2, by nitrous oxide is in a small amount imported, the suboxides layer is deposited.Then, in the period 3, nitrous oxide is interrupted.In the period 4, by nitrous oxide is again imported, but to be different from the more high flow rate of period 3, the high oxidation layer is deposited.In the period 5, power is increased, and nitrous oxide continues to flow into.Then, in the period 6, transition zone is deposited to carry out the transition to the body layer from the grid key-course.
After the lithosomic body layer, back of the body channel interface key-course is deposited.The amount of nitrous oxide is increased gradually, and that argon, nitrogen and power are kept is constant, thereby makes the Interface Control layer by classification gradually.The final layer of back of the body channel interface key-course is stop layer, and described final layer is not containing under the nitrous oxide and depositing with low-power more.
Table three
| Period | Power | Time | Argon | N 2 | N 2O | NH 3 |
| ? | W | sec | sccm | sccm | sccm | sccm |
| A | 500 | 30 | 120 | 500 | 0 | 10 |
| 1 | 2300 | 30 | 120 | 500 | 30 | 0 |
| 2 | 500 | 18 | 120 | 500 | 0 | 0 |
| 3 | 800 | 30 | 120 | 500 | 30 | 0 |
| 4 | 1800 | 24 | 120 | 500 | 30 | 0 |
| 5 | 500 | 30 | 120 | 500 | 30 | 0 |
| 6 | 1500 | 24 | 120 | 500 | 30 | 0 |
| 7 | 500 | 30 | 120 | 500 | 30 | 0 |
| 8 | 1000 | 18 | 120 | 500 | 30 | 0 |
| 9 | 500 | 240 | 120 | 500 | 30 | 0 |
| 10 | 1000 | 24 | 120 | 500 | 30 | 0 |
| 11 | 1000 | 24 | 120 | 500 | 40 | 0 |
| 12 | 1000 | 24 | 120 | 500 | 50 | 0 |
| 13 | 1000 | 24 | 120 | 500 | 60 | 0 |
| 14 | 1000 | 24 | 120 | 500 | 70 | 0 |
| 15 | 1000 | 24 | 120 | 500 | 80 | 0 |
Table three shows the process conditions in order to the active channel that forms multilayer according to another embodiment.All layers are to deposit by the zinc target that DC sputter in the chamber with about 70,000 cubic centimetres volume is doped the Sn of 2.2 atomic percents and has about 4,650 square centimeters area.At period A, sputtering target is nursed one's health (season).Period 1-7 is used for deposition grid key-course.Period 8-10 is used for the body layer, and period 11-15 is used for back of the body channel interface key-course.
In the period 1, the ammonia of nursing one's health from target is interrupted, and nitrous oxide is imported into and power is increased, with the initial layers of deposition grid key-course.Then, in the period 2, nitrous oxide is stopped, and power stage is lowered.Then, in the period 3, nitrous oxide again is imported into, and power is increased a little.At period 4-7, continue nitrous oxide with identical flow rate, and power changes.In the period 3, the low conductivity layer is deposited.Then, in the period 4, come sedimentary deposit with higher power stage.Then, in the period 5, another low conductivity layer is deposited, and then in the period 6, deposits another layer with higher power stage.In the period 7, transition zone is deposited to carry out the transition to the body layer from the grid key-course.
Be deposited at periods 8, the first body layer.Between period 8 and period 10, the period 8 is essentially sedimentary condition with the period 10, comes sedimentary deposit with lower power.After the lithosomic body layer, back of the body channel interface key-course is deposited.During the deposition of period 11-15 back of the body channel interface key-course, nitrous oxide is increased gradually.
Replace simple layer by depositing a plurality of layer, can adjust active channel meeting user's demand, and can make more stable TFT.
Although above stated specification focuses on embodiments of the invention, do not breaking away under the base region of the present invention, it is contemplated that out of the present invention other with further embodiment, and scope of the present invention is determined by the claims of enclosing.
Claims (20)
1. method of manufacturing thin film transistor comprises the following step:
The deposition gate dielectric is in gate electrode and substrate top;
Form active channel in described gate dielectric top, the step of described formation comprises:
Deposit one or more grid key-course, described one or more grid key-course comprises oxygen and is selected from one or more element of the group of being made up of zinc, indium, tin, cadmium and gallium and has first and forms, and at least one in described one or more grid key-course contacts with described gate dielectric;
Deposit one or more body layer, described one or more body layer contacts with in described one or more grid key-course at least one, described one or more body layer comprises oxygen and is selected from one or more element of the group of being made up of zinc, indium, tin, cadmium and gallium and has second and forms, and described second composition is different from described first and forms; And
Deposit one or more back of the body channel interface key-course, described one or more back of the body channel interface key-course contacts with in described one or more body layer at least one, described one or more back of the body channel interface key-course comprises oxygen and is selected from one or more element of the group of being made up of zinc, indium, tin, cadmium and gallium and has the 3rd to be formed, and described the 3rd composition is different from one or more in described first composition and described second composition;
Depositing conducting layer is in the superiors of described one or more back of the body channel interface key-course; And
The described conductive layer of patterning is carried on the back the superiors of channel interface key-course to define source electrode and drain electrode and to expose described one or more.
2. the method for claim 1, wherein said one or more grid key-course integrally has first thickness, described one or more body layer integrally has second thickness, and described one or more back of the body channel interface key-course integrally has the 3rd thickness, and wherein said second thickness is greater than described the 3rd thickness, and described the 3rd thickness is greater than described first thickness.
3. method as claimed in claim 2, wherein said one or more grid key-course has first mobility, described one or more body layer has second mobility, and described one or more back of the body channel interface key-course has the 3rd mobility, and wherein said first mobility, described second mobility are different with described the 3rd mobility.
4. method as claimed in claim 3, wherein said one or more grid key-course has first conductance, described one or more body layer has second conductance, and described one or more back of the body channel interface key-course has the 3rd conductance, and wherein said first conductance, described second conductance are different with described the 3rd conductance.
5. the method for claim 1, wherein said one or more grid key-course comprise several layers.
6. method as claimed in claim 5, wherein said one or more back of the body channel interface key-course comprises several layers.
7. the method for claim 1, the step of one or more grid key-course of wherein said deposition comprises: argon and oxygen-containing gas are imported in the sputtering chamber, and sputter contains the zinc target.
8. method as claimed in claim 7, wherein said oxygen-containing gas comprises nitrous oxide.
9. method as claimed in claim 8, wherein said one or more grid key-course comprise several layers, and the two-layer at least composition difference in the wherein said grid key-course.
10. the method for claim 1, the step of one or more body layer of wherein said deposition comprises: argon and oxygen-containing gas are imported in the sputtering chamber, and sputter contains the zinc target.
11. method as claimed in claim 10, wherein said oxygen-containing gas comprises nitrous oxide.
12. method as claimed in claim 11, wherein said one or more body layer comprise several layers, and the two-layer at least composition difference in the wherein said body layer.
13. the method for claim 1, the step of one or more back of the body channel interface key-course of wherein said deposition comprises: argon and oxygen-containing gas are imported in the sputtering chamber, and sputter contains the zinc target.
14. method as claimed in claim 13, wherein said oxygen-containing gas comprises nitrous oxide.
15. method as claimed in claim 14, wherein said one or more back of the body channel interface key-course comprises several layers, and the two-layer at least composition difference in the wherein said back of the body channel interface key-course.
16. a thin-film transistor comprises:
Gate dielectric is positioned at gate electrode and substrate top;
Active channel is positioned at described gate dielectric top, and described active channel comprises:
One or more grid key-course comprises oxygen and is selected from one or more element of the group of being made up of zinc, indium, tin, cadmium and gallium and has first and forms, and at least one in described one or more grid key-course contacts with described gate dielectric;
One or more body layer, contact with in described one or more grid key-course at least one, described one or more body layer comprises oxygen and is selected from one or more element of the group of being made up of zinc, indium, tin, cadmium and gallium and has second and forms, and described second composition is different from described first and forms; And
One or more back of the body channel interface key-course, contact with in described one or more body layer at least one, described one or more back of the body channel interface key-course comprises oxygen and is selected from one or more element of the group of being made up of zinc, indium, tin, cadmium and gallium and has the 3rd to be formed, and described the 3rd composition is different from one or more in described first composition and described second composition; And
Source electrode and drain electrode are arranged on described one or more back of the body channel interface key-course.
17. thin-film transistor as claimed in claim 16, wherein said one or more grid key-course integrally has first thickness, described one or more body layer integrally has second thickness, and described one or more back of the body channel interface key-course integrally has the 3rd thickness, and wherein said second thickness is greater than described the 3rd thickness, and described the 3rd thickness is greater than described first thickness.
18. thin-film transistor as claimed in claim 17, wherein said one or more grid key-course has first mobility, described one or more body layer has second mobility, and described one or more back of the body channel interface key-course has the 3rd mobility, and wherein said first mobility, described second mobility are different with described the 3rd mobility.
19. thin-film transistor as claimed in claim 18, wherein said one or more grid key-course has first conductance, described one or more body layer has second conductance, and described one or more back of the body channel interface key-course has the 3rd conductance, and wherein said first conductance, described second conductance are different with described the 3rd conductance.
20. thin-film transistor as claimed in claim 19, wherein said one or more back of the body channel interface key-course comprises several layers, and the two-layer at least composition difference in the wherein said back of the body channel interface key-course.
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| US7783108P | 2008-07-02 | 2008-07-02 | |
| US61/077,831 | 2008-07-02 | ||
| US17774708P | 2008-11-25 | 2008-11-25 | |
| US17774408P | 2008-11-25 | 2008-11-25 | |
| US61/177,747 | 2008-11-25 | ||
| US12/411,195 US8258511B2 (en) | 2008-07-02 | 2009-03-25 | Thin film transistors using multiple active channel layers |
| US12/411,195 | 2009-03-25 | ||
| US61/177,744 | 2009-05-13 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107017210A (en) * | 2016-01-08 | 2017-08-04 | 株式会社日本显示器 | Thin film transistor (TFT) |
| CN109037343A (en) * | 2018-06-08 | 2018-12-18 | 武汉华星光电半导体显示技术有限公司 | A kind of bilayer channel thin-film transistor and preparation method thereof, display panel |
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2009
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107017210A (en) * | 2016-01-08 | 2017-08-04 | 株式会社日本显示器 | Thin film transistor (TFT) |
| CN109037343A (en) * | 2018-06-08 | 2018-12-18 | 武汉华星光电半导体显示技术有限公司 | A kind of bilayer channel thin-film transistor and preparation method thereof, display panel |
| CN109037343B (en) * | 2018-06-08 | 2021-09-24 | 武汉华星光电半导体显示技术有限公司 | Double-layer channel thin film transistor, preparation method thereof and display panel |
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