CN103186296A - Surface acoustic wave touch pad and manufacturing method thereof - Google Patents

Surface acoustic wave touch pad and manufacturing method thereof Download PDF

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Publication number
CN103186296A
CN103186296A CN2011104506771A CN201110450677A CN103186296A CN 103186296 A CN103186296 A CN 103186296A CN 2011104506771 A CN2011104506771 A CN 2011104506771A CN 201110450677 A CN201110450677 A CN 201110450677A CN 103186296 A CN103186296 A CN 103186296A
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acoustic wave
touch pad
surface acoustic
substrate
layer
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CN2011104506771A
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CN103186296B (en
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许嘉麟
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Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
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Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
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Abstract

The invention relates to a surface acoustic wave touch pad, which comprises a flexible substrate, an acoustic wave transferring layer, a buffering layer, a piezoelectric layer and an electrode layer, wherein the acoustic wave transferring layer is arranged on the substrate and made of nano diamond; the buffering layer is arranged on the acoustic wave transferring layer; the piezoelectric layer is arranged on the buffering layer and forms an electrode pattern; and the electrode layer is arranged on the piezoelectric layer. The invention also relates to a manufacturing method of the surface acoustic wave touch pad.

Description

Surface acoustic wave touch pad and manufacture method thereof
Technical field
The present invention relates to a kind of surface acoustic wave touch pad and manufacture method thereof.
Background technology
Touch pad can be divided into resistance-type, condenser type, infrared-type, surface acoustic wave type etc. by its kind.Wherein the surface acoustic wave type touch pad is not subject to environment temperature, humidity effect because of its operability, and have the life-span long, resolution is high and characteristics such as the 3rd pressure axis sensing capability, is fit to apply to rugged surroundings such as public place.Yet the substrate of general touch pad all is glass, and than using flexible base plate, its continuous mass-produced ability is restricted.
Summary of the invention
In view of this, provide a kind of manufacture method of using surface acoustic wave touch pad and a kind of this surface acoustic wave touch pad of flexible base plate.
A kind of surface acoustic wave touch pad comprises having flexual substrate; Be positioned at the sound wave transfer layer on this substrate, the material of this sound wave transfer layer is Nano diamond; Be positioned at the cushion on this sound wave transfer layer; Be positioned at the piezoelectric layer on this cushion, this piezoelectric layer forms electrode pattern; And be positioned at electrode layer on this piezoelectric layer.
A kind of manufacture method of surface acoustic wave touch pad, it comprises the steps: to provide one to have flexual substrate; Form the sound wave transfer layer that is formed by the Nano diamond material at this substrate; Form cushion at this sound wave transfer layer; Form piezoelectric layer at this cushion, and make this piezoelectric layer form electrode pattern by exposure imaging; The electrode pattern that reaches at this piezoelectric layer forms electrode layer.
Compare with prior art, this surface acoustic wave touch pad provided by the present invention replaces traditional glass screen by using flexible base plate, can be so that the manufacture method of this surface acoustic wave touch pad be simple, can large tracts of land and make pliability surface acoustic wave touch pad cheaply, can greatly improve production efficiency and the range of application of this surface acoustic wave touch pad thus.And be formed with the sound wave transfer layer that is formed by the Nano diamond material on this surface acoustic wave touch pad, can improve sound wave in the transfer rate of element surface, and reduce the signal loss.
Description of drawings
Fig. 1 is the perspective view of the surface acoustic wave touch pad that provides of embodiment of the present invention.
Fig. 2 is that the II-II of Fig. 1 is to analysing and observe partial view.
Fig. 3 to Fig. 6 is the manufacture process synoptic diagram of the surface acoustic wave touch pad that provides of embodiment of the present invention.
Embodiment
Below in conjunction with accompanying drawing the present invention is described in further detail.
See also Fig. 1, Fig. 2, the surface acoustic wave touch pad 100 that embodiment of the present invention provides comprises flexible base plate 10, sound wave transfer layer 20, cushion 30, piezoelectric layer 40 and electrode layer 50.
This substrate 10 is flexible base plate, and in the present embodiment, this substrate 10 is PET (polyethylene terephthalate), and in other embodiments, this substrate 10 also can be the PES(polyethersulfone resin).
The material of this sound wave transfer layer 20 is Nano diamond, and its thickness is about 3~5 μ m.Because Nano diamond has very high elasticity coefficient, therefore can improve sound wave in the transfer rate of element surface, and reduce the signal loss.In addition, Nano diamond also has high rigidity, corrosion resistivity, abrasion resisting, characteristics that friction factor is little, can effectively prolong the serviceable life of this surface acoustic wave touch pad 100.
The material of this cushion 30 is
Figure 2011104506771100002DEST_PATH_IMAGE001
(silicon dioxide), its thickness are about 0.2 μ m.Because the material of this piezoelectric layer 40 is zinc paste (ZnO), the material of this cushion 30 is oxide equally, therefore this cushion 30 can also make piezoelectric layer 40 when forming and this cushion 30 is combined closely, thereby better be attached on this sound wave transfer layer 20, and have better character of surface.
The thickness of this piezoelectric layer 40 is about 1~2 μ m, and this piezoelectric layer 40 forms the finger-fork type electrode pattern, because this electrode pattern is identical with prior art, at this its detailed construction is not done description.This electrode layer 50 is positioned on this piezoelectric layer 40, its material be tin indium oxide (Indium Tin Oxide, ITO).
Because this surface acoustic wave touch pad 100 is to be arranged on the display screen, therefore aforesaid substrate 10, sound wave transfer layer 20, cushion 30, piezoelectric layer 40, electrode layer 50 all are that transparent material is made, and material is not limited to, and present embodiment mentions, for example, the material of this piezoelectric layer 40 can be the transparent piezoelectric pottery, and the material of this electrode layer 50 can be nano silver wire, Graphene etc.
The manufacture method of aforesaid surface acoustic wave touch pad 100 comprises the steps.
Step 1 as shown in Figure 3, provides a substrate 10, and these substrate 10 surfaces are cleaned.
In the present embodiment, this substrate 10 is flexible base plates of being made by PET, and adopts the oxonium ion cleaning method that substrate 10 surfaces are cleaned.When cleaning, 10 one-tenths web-likes of this substrate are installed on the unreeling machine 81 in the oxonium ion cleaner 80, and an end of substrate 10 is wound on the winder 82 in this cleaner 80, and unreeling machine 81 and winder 82 keep at a certain distance away.When cleaning, 81 pairs of these substrates 10 of unreeling machine unreel and make substrate 10 advance towards winder 82 directions, and in this process, 80 pairs of substrates 10 of oxonium ion cleaner clean, and carry out rolling by 82 pairs of these substrates 10 of this winder at last.
The invention is not restricted to that present embodiment limits, for example, can adopt hair-dryer that substrate 10 surfaces are cleaned.
Step 2, as shown in Figure 4, the sound wave transfer layer 20 that stacked making is made by the Nano diamond material on this substrate 10.
In the present embodiment, the mode by sputter plates sound wave transfer layer 20 at substrate 10.When plated film, the substrate 10 that is web-like is installed on the unreeling machine 85 in the vacuum splashing and plating coating machine 84 and by unreeling machine 85 and unreels, and in the process that substrate 10 moves to winder 86, sound wave transfer layer 20 is plated on the substrate 10.Substrate 10 after plated film is finished carries out rolling by winder 86.
Step 3, the cushion 30 that stacked making is made by earth silicon material on sound wave transfer layer 20.
In the present embodiment, the mode by sputter plates cushion 30 at sound wave transfer layer 20, and the mode in its production method and the step 2 is similar, is not repeated at this.
Step 4, stacked making forms the piezoelectric layer 40 of finger-fork type electrode pattern on cushion 30.
In the present embodiment, the mode by sputter plates the piezoelectric layer of being made by zinc oxide material 40 at cushion 30, and its mode and aforementioned sputtering way are similar.Then, the mode by exposure imaging makes piezoelectric layer 40 form electrode pattern.Please refer to Fig. 5, when exposure, the substrate 10 that is formed with piezoelectric layer 40 is placed in the exposure machine 88, be coated with light shield 90 on the substrate 10, be formed with electrode pattern photic zone 91 on the light shield 90, light sees through electrode pattern photic zone 91 and shines on the piezoelectric layer 40, because forming the zinc oxide material of piezoelectric layer 40 is photosensitive material, therefore can be with the pattern transfer of electrode pattern photic zone 91 to piezoelectric layer 40 by illumination, by visualization way the partial corrosion that does not form electrode pattern on the piezoelectric layer 40 is fallen at last, thereby make piezoelectric layer 40 form the finger-fork type electrode pattern.
Step 5, stacked making electrode layer 50 on the electrode pattern of piezoelectric layer 40.
In the present embodiment, the mode by sputter plates the electrode layer of being made by the tin indium oxide material 50 at piezoelectric layer 40.Please refer to Fig. 6, different with aforementioned sputtering way is, when sputter electrode layer 50, cover the metal cap 93 that is formed with hollow out finger-fork type electrode pattern 94 at substrate 10, hollow out finger-fork type electrode pattern 94 is corresponding with the finger-fork type electrode pattern of electrode layer 50, to guarantee that 50 of electrode layers are formed on the piezoelectric layer 40.In other embodiments, also can be by first sputter, the mode of exposure imaging forms electrode layer 50 again.
Compared with prior art, this surface acoustic wave touch pad 100 provided by the present invention replaces traditional glass screen by using flexible base plate 10, can be so that the manufacture method of this surface acoustic wave touch pad be simple, can large tracts of land and make pliability surface acoustic wave touch pad cheaply, can greatly improve production efficiency and the range of application of this surface acoustic wave touch pad thus.And be formed with the sound wave transfer layer 20 that is formed by the Nano diamond material on this surface acoustic wave touch pad 100, can improve sound wave in the transfer rate of element surface, and reduce the signal loss.
Be understandable that those skilled in the art also can do other variation and wait for design of the present invention in spirit of the present invention, as long as it does not depart from technique effect of the present invention and all can.The variation that these are done according to spirit of the present invention all should be included within the present invention's scope required for protection.

Claims (10)

1. surface acoustic wave touch pad, it comprises:
Has flexual substrate;
Be positioned at the sound wave transfer layer on this substrate, the material of this sound wave transfer layer is Nano diamond;
Be positioned at the cushion on this sound wave transfer layer;
Be positioned at the piezoelectric layer on this cushion, this piezoelectric layer forms electrode pattern; And
Be positioned at the electrode layer on this piezoelectric layer.
2. surface acoustic wave touch pad as claimed in claim 1, it is characterized in that: the material of this cushion is silicon dioxide.
3. surface acoustic wave touch pad as claimed in claim 1 is characterized in that: this substrate is by a kind of the making in the following material: polyethylene terephthalate, polyethersulfone resin.
4. surface acoustic wave touch pad as claimed in claim 1 is characterized in that: this piezoelectric layer is by a kind of the making in the following material: zinc paste, transparent piezoelectric pottery.
5. surface acoustic wave touch pad as claimed in claim 1 is characterized in that: this electrode layer is by a kind of the making in the following material: tin indium oxide, nano silver wire, Graphene.
6. the manufacture method of a surface acoustic wave touch pad, it comprises the steps:
Provide one to have flexual substrate;
Form the sound wave transfer layer that is formed by the Nano diamond material at this substrate;
Form cushion at this sound wave transfer layer;
Form piezoelectric layer at this cushion, and make this piezoelectric layer form electrode pattern by exposure imaging; And
Electrode pattern at this piezoelectric layer forms electrode layer.
7. the manufacture method of surface acoustic wave touch pad as claimed in claim 6, it is characterized in that: this sound wave transfer layer, cushion, piezoelectric layer, electrode layer form by sputtering way.
8. the manufacture method of surface acoustic wave touch pad as claimed in claim 7 is characterized in that: before sputter forms this electrode layer, cover the metal cap that is formed with the hollow out electrode pattern on this substrate.
9. the manufacture method of surface acoustic wave touch pad as claimed in claim 6 is characterized in that, in this step with flexual substrate is provided, also comprises the step that this substrate is cleaned.
10. the manufacture method of surface acoustic wave touch pad as claimed in claim 9, it is characterized in that, in above-mentioned each step, also being included in this substrate that will be web-like when step begins is installed on the unreeling machine, this unreeling machine unreels this substrate, and the substrate after step finally uses winder to this acceptance processing carries out rolling.
CN201110450677.1A 2011-12-29 2011-12-29 Surface acoustic wave touch pad and manufacturing method thereof Expired - Fee Related CN103186296B (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104810470A (en) * 2014-01-26 2015-07-29 中国科学院苏州纳米技术与纳米仿生研究所 Surface acoustic wave device and preparation method thereof
CN104978082A (en) * 2014-04-04 2015-10-14 现代自动车株式会社 Variable mounting sound wave touch pad

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6411287B1 (en) * 1999-09-08 2002-06-25 Elo Touchsystems, Inc. Stress seal for acoustic wave touchscreens
CN101669088A (en) * 2007-04-25 2010-03-10 泰科电子公司 A touchscreen for detecting multiple touches
CN201600668U (en) * 2009-09-28 2010-10-06 北京汇冠新技术股份有限公司 Touch system
US20110242055A1 (en) * 2010-04-02 2011-10-06 Samsung Electronics Co., Ltd. Composite touch screen panel

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6411287B1 (en) * 1999-09-08 2002-06-25 Elo Touchsystems, Inc. Stress seal for acoustic wave touchscreens
CN101669088A (en) * 2007-04-25 2010-03-10 泰科电子公司 A touchscreen for detecting multiple touches
CN201600668U (en) * 2009-09-28 2010-10-06 北京汇冠新技术股份有限公司 Touch system
US20110242055A1 (en) * 2010-04-02 2011-10-06 Samsung Electronics Co., Ltd. Composite touch screen panel

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104810470A (en) * 2014-01-26 2015-07-29 中国科学院苏州纳米技术与纳米仿生研究所 Surface acoustic wave device and preparation method thereof
CN104978082A (en) * 2014-04-04 2015-10-14 现代自动车株式会社 Variable mounting sound wave touch pad
CN104978082B (en) * 2014-04-04 2019-08-06 现代自动车株式会社 Variable installation acoustic wave touch plate

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