CN103185918A - 微机电可调氮化物谐振光栅及其制备方法 - Google Patents
微机电可调氮化物谐振光栅及其制备方法 Download PDFInfo
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- CN103185918A CN103185918A CN2013100856811A CN201310085681A CN103185918A CN 103185918 A CN103185918 A CN 103185918A CN 2013100856811 A CN2013100856811 A CN 2013100856811A CN 201310085681 A CN201310085681 A CN 201310085681A CN 103185918 A CN103185918 A CN 103185918A
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- nitride
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 89
- 238000002360 preparation method Methods 0.000 title description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 41
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 41
- 239000010703 silicon Substances 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 238000010894 electron beam technology Methods 0.000 claims abstract description 19
- 230000003287 optical effect Effects 0.000 claims abstract description 19
- 238000005530 etching Methods 0.000 claims abstract description 18
- 238000001020 plasma etching Methods 0.000 claims abstract description 4
- 235000012431 wafers Nutrition 0.000 claims description 21
- 238000002955 isolation Methods 0.000 claims description 20
- 238000005516 engineering process Methods 0.000 claims description 13
- 238000010276 construction Methods 0.000 claims description 12
- 241000588731 Hafnia Species 0.000 claims description 9
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 9
- 238000010884 ion-beam technique Methods 0.000 claims description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims description 9
- 238000012546 transfer Methods 0.000 claims description 9
- 238000005121 nitriding Methods 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000012528 membrane Substances 0.000 claims description 6
- 238000004528 spin coating Methods 0.000 claims description 6
- 238000004380 ashing Methods 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 238000000609 electron-beam lithography Methods 0.000 claims description 3
- 238000001459 lithography Methods 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 230000010354 integration Effects 0.000 abstract 2
- 238000000206 photolithography Methods 0.000 abstract 1
- 238000000427 thin-film deposition Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 17
- 238000012545 processing Methods 0.000 description 7
- 238000006073 displacement reaction Methods 0.000 description 6
- 229910002601 GaN Inorganic materials 0.000 description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 238000011161 development Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000002910 structure generation Methods 0.000 description 1
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Abstract
Description
Claims (3)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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CN201410492521.3A CN104297843B (zh) | 2013-03-18 | 2013-03-18 | 微机电可调氮化物谐振光栅制备方法 |
CN201310085681.1A CN103185918B (zh) | 2013-03-18 | 2013-03-18 | 微机电可调氮化物谐振光栅 |
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CN201310085681.1A CN103185918B (zh) | 2013-03-18 | 2013-03-18 | 微机电可调氮化物谐振光栅 |
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CN201410492521.3A Division CN104297843B (zh) | 2013-03-18 | 2013-03-18 | 微机电可调氮化物谐振光栅制备方法 |
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CN103185918A true CN103185918A (zh) | 2013-07-03 |
CN103185918B CN103185918B (zh) | 2015-05-06 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103185909A (zh) * | 2013-03-18 | 2013-07-03 | 南京邮电大学 | 微机电可调氮化物谐振光栅及其双面加工方法 |
CN103811598A (zh) * | 2013-12-12 | 2014-05-21 | 南京邮电大学 | 硅基氮化物材料的氧化铪悬空谐振光子器件及其制备方法 |
CN108181722A (zh) * | 2016-07-24 | 2018-06-19 | 哈尔滨理工大学 | 一种占空比连续调节方法 |
Citations (5)
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---|---|---|---|---|
CN1855652A (zh) * | 2005-04-28 | 2006-11-01 | 佳能株式会社 | 垂直腔面发射激光器 |
US20090003397A1 (en) * | 2003-07-25 | 2009-01-01 | Mitsubishi Denki Kabushiki Kaisha | Optical device, and semiconductor laser oscillator |
CN101369714A (zh) * | 2007-08-13 | 2009-02-18 | 住友电气工业株式会社 | 制造半导体激光器的方法 |
CN201622361U (zh) * | 2009-10-20 | 2010-11-03 | 上海理工大学 | 一种双通道光谱能量调谐滤光片 |
CN102602878A (zh) * | 2011-12-26 | 2012-07-25 | 南京邮电大学 | 基于硅衬底氮化物的光学微机电器件及其制备方法 |
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2013
- 2013-03-18 CN CN201310085681.1A patent/CN103185918B/zh not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090003397A1 (en) * | 2003-07-25 | 2009-01-01 | Mitsubishi Denki Kabushiki Kaisha | Optical device, and semiconductor laser oscillator |
CN1855652A (zh) * | 2005-04-28 | 2006-11-01 | 佳能株式会社 | 垂直腔面发射激光器 |
CN101369714A (zh) * | 2007-08-13 | 2009-02-18 | 住友电气工业株式会社 | 制造半导体激光器的方法 |
CN201622361U (zh) * | 2009-10-20 | 2010-11-03 | 上海理工大学 | 一种双通道光谱能量调谐滤光片 |
CN102602878A (zh) * | 2011-12-26 | 2012-07-25 | 南京邮电大学 | 基于硅衬底氮化物的光学微机电器件及其制备方法 |
Non-Patent Citations (2)
Title |
---|
YONGJIN WANG, ..ETC: "COMB-DRIVE III-NITRIDE MICRO MIRROR FABRICATED BY FAST ATOM BEAM ETCHING", 《TRANSDUCERS》, 9 June 2011 (2011-06-09) * |
YONGJIN WANG, ..ETC: "The resonant III-nitride grating reflector", 《JOURNAL OF MICROMECHANICS AND MICROENGINEERING》, vol. 21, no. 10, 21 September 2011 (2011-09-21), XP020212057, DOI: doi:10.1088/0960-1317/21/10/105025 * |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103185909A (zh) * | 2013-03-18 | 2013-07-03 | 南京邮电大学 | 微机电可调氮化物谐振光栅及其双面加工方法 |
CN103185909B (zh) * | 2013-03-18 | 2015-07-01 | 南京邮电大学 | 微机电可调氮化物谐振光栅及其双面加工方法 |
CN103811598A (zh) * | 2013-12-12 | 2014-05-21 | 南京邮电大学 | 硅基氮化物材料的氧化铪悬空谐振光子器件及其制备方法 |
CN103811598B (zh) * | 2013-12-12 | 2016-03-23 | 南京邮电大学 | 硅基氮化物材料的氧化铪悬空谐振光子器件及其制备方法 |
CN108181722A (zh) * | 2016-07-24 | 2018-06-19 | 哈尔滨理工大学 | 一种占空比连续调节方法 |
CN108181722B (zh) * | 2016-07-24 | 2020-03-06 | 哈尔滨理工大学 | 一种占空比连续调节方法 |
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Application publication date: 20130703 Assignee: Jiangsu Nanyou IOT Technology Park Ltd. Assignor: Nanjing Post & Telecommunication Univ. Contract record no.: 2016320000211 Denomination of invention: Micro-electro-mechanical adjustable nitride resonant grating and preparation method thereof Granted publication date: 20150506 License type: Common License Record date: 20161114 |
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Assignee: Jiangsu Nanyou IOT Technology Park Ltd. Assignor: Nanjing Post & Telecommunication Univ. Contract record no.: 2016320000211 Date of cancellation: 20180116 |
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