CN103178209A - Metal oxide semiconductor (MOS) apparatus based on TeO2/pentacene composite material and having broadband characteristic - Google Patents
Metal oxide semiconductor (MOS) apparatus based on TeO2/pentacene composite material and having broadband characteristic Download PDFInfo
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- CN103178209A CN103178209A CN2013101108555A CN201310110855A CN103178209A CN 103178209 A CN103178209 A CN 103178209A CN 2013101108555 A CN2013101108555 A CN 2013101108555A CN 201310110855 A CN201310110855 A CN 201310110855A CN 103178209 A CN103178209 A CN 103178209A
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Abstract
The invention discloses a metal oxide semiconductor (MOS) apparatus based on a TeO2/pentacene composite material and having a broadband characteristic. The apparatus comprises a source, a grid and a drain, wherein from bottom to top, the MOS apparatus has the following structure: glass is taken as a substrate and indium tin oxide (ITO) is taken as the grid, a dual-layer material structure of polyvinyl alcohol (PVA) and polymethyl methacrylate (PMMA) is used as an insulating layer, and a TeO2/pentacene composite material is taken as an active layer; both the source and the drain adopt gold as electrodes, and the source and the drain are in interdigital structures. The apparatus disclosed by the invention is an active MOS apparatus which controls conductivity of solid material through an electric field. The apparatus represents a remarkable broadband characteristic, and frequency band is comparatively wide even on an amplitude-frequency characteristic; so that the apparatus disclosed by the invention has a good application prospect in sensors, high-frequency electronic circuits, large-scale integration circuits and active display fields.
Description
Technical field
The present invention relates to semiconductor device, be specifically related to a kind of MOS device with broadband properties.
Background technology
In prior art, the MOS device comprises source electrode, grid and drain electrode, and traditional MOS device primary structure carries out oxidation for take Silicon Wafer as substrate at the Silicon Wafer mid portion, produces SiO
2Oxide layer uses the long metal electrode of mode of thermal evaporation as gate electrode on insulating barrier as insulating barrier afterwards again.Source, drain electrode adopt the mode of thermal evaporation to be longer than equally not to be had on oxidized silicon originally.Usually the involved technique of this class MOS device is comparatively complicated, and particularly wherein doping step cost is higher.In addition, within the physical size of such devices can only be confined to certain scope.The significant limitation more prior, that such devices exists in the work of high-frequency circuit, amplitude-frequency characteristic is relatively poor.The defective of working on high-frequency circuit in order to solve device at present, most of way is to adopt heavily to mix technique or change dopant species, but this class way also can cause the reduction of other parameters of device, and preparation technology is comparatively complicated, still has certain weak point.
Summary of the invention
For the prior art above shortcomings, the object of the invention is to solve the MOS device in the limitation in high-frequency electronic field and the complexity on device preparation technology, and provide a kind of based on TeO
2The MOS device with broadband properties of/pentacene composite material.
It is described based on TeO that the present invention also provides
2The manufacture method of the MOS device with broadband properties of/pentacene composite material.
Realize above-mentioned purpose, the present invention adopts following technical scheme: a kind of based on TeO
2The MOS device with broadband properties of/pentacene composite material comprises source electrode, grid and drain electrode; It is characterized in that, be followed successively by from top to bottom on the structure of this MOS device, as grid, PVA and PMMA double layer material structure be as insulating barrier as substrate and ITO for glass, TeO
2/ pentacene composite material is as active active coating; Source electrode and drain electrode adopt gold as electrode, and described source electrode and drain electrode are interdigitated configuration.
Described manufacture method with MOS device of broadband properties comprises the steps:
1) the sputter tin indium oxide is grid on silicon boryl substrate glass;
2) (solvent of PVA solution is as water, and concentration is 7% take the solution of PVAC polyvinylalcohol and polymetylmethacrylate preparation; The solvent of PMMA solution is chlorobenzene, and concentration is 5%) be raw material, by the even method that is coated with, materials at two layers is grown on grid successively, the integral body that both synthesize consists of insulating barrier, wherein polyvinyl alcohol layer and gate contact;
3) make based on TeO on this basis
2The active active coating of/pentacene composite material; Concrete method evaporation pentacene, Te successively forms pentacene/Te layer, carries out the thermal oxidation diffusion, changes Te into TeO
2Layer also diffuses into the surface of pentacene layer;
4) at last, the method by vapor deposition and photoetching produces source electrode and the drain electrode of " interdigitated " topmost.
Further, in described PVA and PMMA insulating barrier, the Thickness Ratio of PVA and PMMA is 8:1.
Compared to existing technology, the present invention has following beneficial effect:
1, the present invention utilizes electric field to control the active MOS device of solid material electric conductivity.This device shows obvious broadband properties, and namely frequency band is wider on amplitude-frequency characteristic.This MOS device has a wide range of applications at existing microelectronics and applying electronic field.
2, there is very large controllability in the physical size of device of the present invention, can accomplish as the device of the driver that designs for smart card, identification card, liquid crystal display etc. the size that area is larger; And can accomplish very little size at nanoscale electric application device; On amplitude-frequency characteristic, this device can show obvious broadband properties, and based on above advantage, makes this invention become at transducer, High-Frenquency Electronic Circuit, and there is good application prospect in large scale integrated circuit and active active demonstration field.
3, the processing steps such as solution process, physical vapor deposition process and photoetching used of this invention, processing step obviously reduces, compare the making of conventional MOS device, technical process has reduced certain complexity, and the MOS device that produces is appointed so and conventional MOS performance of devices and parameter have similitude and comparativity, and also show more outstanding characteristic on amplitude-frequency characteristic.
Description of drawings
Fig. 1 the present invention is based on TeO
2The MOS device profile map with broadband properties of/pentacene composite material;
Fig. 2 the present invention is based on TeO
2The MOS device schematic perspective view with broadband properties of/pentacene composite material;
Fig. 3 the present invention is based on TeO
2The transfer characteristic curve of the MOS device with broadband properties of/pentacene composite material;
Fig. 4 the present invention is based on TeO
2The output characteristic curve of the MOS device with broadband properties of/pentacene composite material;
Fig. 5 the present invention is based on TeO
2The amplitude-versus-frequency curve of the MOS device with broadband properties of/pentacene composite material;
Fig. 6 the present invention is based on TeO
2Voltage-the capacitance curve of the MOS device with broadband properties of/pentacene composite material.
Embodiment
The invention will be further described below in conjunction with the drawings and specific embodiments.
As depicted in figs. 1 and 2, a kind of based on TeO
2The MOS device with broadband properties of/pentacene composite material, the structure of described MOS device are " transoid " structure, namely prepare whole MOS device on the grid of this device, and fully different from traditional MOS device take silicon materials as substrate.The tin indium oxide of this device sputter on silicon boryl substrate glass is grid.Take the solution of PVAC polyvinylalcohol and polymetylmethacrylate preparation as raw material, by the even method that is coated with, materials at two layers is grown on grid successively, the integral body that both synthesize consists of insulating barrier, wherein polyvinyl alcohol layer and gate contact.Make based on TeO on this basis
2The active active coating of/pentacene composite material, concrete method evaporation pentacene, Te successively form pentacene/Te layer, carry out thermal oxidation diffusion, like Te change TeO into
2Layer also diffuses into the surface of pentacene layer.Method by vapor deposition and photoetching produces source electrode and the drain electrode of " interdigitated " topmost at last.
The Thickness Ratio of described grid, insulating barrier and active active coating is 1:4 ~ 10:1, preferred 1:6:1.
In described PVA and PMMA insulating barrier, the Thickness Ratio of PVA and PMMA is 6 ~ 12:1, is preferably 8:1.
Referring to Fig. 3, the voltage between the grid sources is gate source voltage, and the voltage between drain-source is drain-source voltage.Itself be the device of a voltage control electric current during MOS, when voltage was low, the raceway groove of device was not completed into, and drain current is much little.Along with the increase of the absolute value of the voltage between the grid sources, the active active coating of device forms strong inversion, and drain current increases rapidly.With Keithley 4200scs semiconductor parametric tester, record as above this transfer characteristic curve, the trend of curve is consistent with the transfer characteristic curve of p channel MOS device in theory with trend.
Referring to Fig. 4, with Keithley 4200scs semiconductor parametric tester, record this output characteristic curve, the trend of curve is with trend and p channel MOS device is consistent in theory; Device satisfies the electrology characteristic of MOS device.
Referring to Fig. 5, by with in the device place in circuit, adopt the sweep generator experiment to record the mutual conductance of device on different operating frequencies, device is in the characteristic in high frequency stage or good, and cut-off frequency reaches 50MHz.
Referring to Fig. 6, with Keithley 4200scs semiconductor parametric tester, survey the voltage-capacitance curve between active active coating and grid, the trend of curve is with trend and p channel MOS device is consistent in theory.
To sum up, the present invention has the electrology characteristic that the conventional MOS device has, unique advantage is that this device has good broadband properties, and manufacture craft is simple, with low cost, can at room temperature process, be easy to promote, particularly have broad application prospects in the high-frequency electronic field in the electronic device applications field.Become at transducer, High-Frenquency Electronic Circuit, there is good application prospect in large scale integrated circuit and active active demonstration field.
The processing steps such as the solution process that this invention is used, physical vapor deposition process and photoetching, processing step obviously reduces, compare the making of conventional MOS device, technical process has reduced certain complexity, and the MOS device that produces is appointed so and conventional MOS performance of devices and parameter have similitude and comparativity, and also show more outstanding characteristic on amplitude-frequency characteristic.
Need to prove at last, above embodiment is only in order to illustrate technical scheme of the present invention but not the restriction technologies scheme, those of ordinary skill in the art is to be understood that, those are modified or are equal to replacement technical scheme of the present invention, and do not break away from aim and the scope of the technical program, all should be encompassed in the middle of claim scope of the present invention.
Claims (5)
1. one kind based on TeO
2The MOS device with broadband properties of/pentacene composite material comprises source electrode, grid and drain electrode; It is characterized in that, be followed successively by from top to bottom on the structure of this MOS device, as grid, PVA and PMMA double layer material structure be as insulating barrier as substrate and ITO for glass, TeO
2/ pentacene composite material is as active active coating; Source electrode and drain electrode adopt gold as electrode, and described source electrode and drain electrode are interdigitated configuration.
2. the MOS device with broadband properties according to claim 1; It is characterized in that, described interdigitated configuration is that source electrode and drain electrode are respectively the semi-surrounding structure, Yi Bian and source electrode and the semi-surrounding zone that drains and stretch at least drain electrode and source electrode, form interdigitate.
3. have as claimed in claim 1 the MOS device of broadband properties, it is characterized in that, the Thickness Ratio of described grid, insulating barrier and active active coating is 1:6:1.
4. have as claimed in claim 1 the MOS device of broadband properties, it is characterized in that, in described PVA and PMMA insulating barrier, the Thickness Ratio of PVA and PMMA is 8:1.
5. have as claimed in claim 1 the manufacture method of the MOS device of broadband properties, comprise the steps:
1) the sputter tin indium oxide is grid on silicon boryl substrate glass;
2) (solvent of PVA solution is as water, and concentration is 7% take PVAC polyvinylalcohol solution and polymetylmethacrylate solution; The solvent of PMMA solution is chlorobenzene, and concentration is 5%) be raw material, by the even method that is coated with, materials at two layers is grown on grid successively, the integral body that both synthesize consists of insulating barrier, wherein polyvinyl alcohol layer and gate contact;
3) make based on TeO on this basis
2The active active coating of/pentacene composite material; Concrete method evaporation pentacene, Te successively forms pentacene/Te layer, carries out the thermal oxidation diffusion, changes Te into TeO
2Layer also diffuses into the surface of pentacene layer;
4) at last, the method by vapor deposition and photoetching produces source electrode and the drain electrode of " interdigitated " topmost.
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| CN201310110855.5A CN103178209B (en) | 2013-04-01 | 2013-04-01 | A kind of based on TeO 2the MOS device with broadband properties of/pentacene composite material |
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| CN201310110855.5A CN103178209B (en) | 2013-04-01 | 2013-04-01 | A kind of based on TeO 2the MOS device with broadband properties of/pentacene composite material |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6867442B2 (en) * | 2002-04-29 | 2005-03-15 | Infineon Technologies Ag | Surface-functionalized inorganic semiconductor particles as electrical semiconductors for microelectronics applications |
| CN1918712A (en) * | 2004-02-12 | 2007-02-21 | 国际整流器公司 | Integrated iii-nitride power devices |
| CN101013740A (en) * | 2005-12-29 | 2007-08-08 | Lg.菲利浦Lcd株式会社 | Organic thin film transistor and method for manufacturing the same |
| CN101127387A (en) * | 2007-09-11 | 2008-02-20 | 电子科技大学 | A simplified organic thin film transistor and its making method |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6867442B2 (en) * | 2002-04-29 | 2005-03-15 | Infineon Technologies Ag | Surface-functionalized inorganic semiconductor particles as electrical semiconductors for microelectronics applications |
| CN1918712A (en) * | 2004-02-12 | 2007-02-21 | 国际整流器公司 | Integrated iii-nitride power devices |
| CN101013740A (en) * | 2005-12-29 | 2007-08-08 | Lg.菲利浦Lcd株式会社 | Organic thin film transistor and method for manufacturing the same |
| CN101127387A (en) * | 2007-09-11 | 2008-02-20 | 电子科技大学 | A simplified organic thin film transistor and its making method |
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