CN103178170B - Solid-state light emitting element - Google Patents
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- CN103178170B CN103178170B CN201110438902.XA CN201110438902A CN103178170B CN 103178170 B CN103178170 B CN 103178170B CN 201110438902 A CN201110438902 A CN 201110438902A CN 103178170 B CN103178170 B CN 103178170B
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- 230000004888 barrier function Effects 0.000 claims abstract description 81
- 239000000463 material Substances 0.000 claims description 16
- 238000009792 diffusion process Methods 0.000 claims description 11
- 150000001875 compounds Chemical class 0.000 claims description 8
- 229910052738 indium Inorganic materials 0.000 claims description 7
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 6
- 229910002601 GaN Inorganic materials 0.000 claims description 5
- 230000005611 electricity Effects 0.000 description 7
- 239000004575 stone Substances 0.000 description 6
- 230000005428 wave function Effects 0.000 description 6
- 238000010276 construction Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000001413 cellular effect Effects 0.000 description 3
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
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Abstract
A kind of solid-state light emitting element, comprise one first type doped layer, one makes moving cell, one Second-Type doped layer, and an electrode unit, to be formed on the first type doped layer as moving cell and to be folded in respectively between two adjacent barrier layers and the well layer converting electrical energy into luminous energy when accepting electric energy along sequentially forming most barrier layer and majority away from the first type doped layer direction, thickness proportion between each well layer and each barrier layer is not less than 0.4 and is not more than 1, Second-Type doped layer is arranged to be done on moving cell and becomes opposite-sign with the first type doped layer, electrode unit and the first type doped layer, Second-Type doped layer is electrically connected and can coordinates the electric energy sending the external world certainly as moving cell, the present invention is by predetermined thickness ratio between each well layer and each barrier layer, increase electronics-electric hole right in conjunction with probability, lift elements internal quantum, and then promote the luminosity of element.
Description
Technical field
The present invention relates to a kind of light-emitting component, particularly relate to a kind of solid-state light emitting element.
Background technology
Consult Fig. 1, in the light-emitting diode early stage of development, light-emitting diode comprises a base material 11, one deck is formed at N-shaped doped layer 12 (n-typedopedlayer) on this base material 11, one deck is formed at active layers 13 (activelayer) on this N-shaped doped layer 12, one deck is formed at p-type doped layer 14 (p-typedopedlayer) in this active layers 13, and one is electrically connected with this N-shaped doped layer 12 and p-type doped layer 14 and can sends the electrode unit 15 from extraneous electric energy respectively.
When transmitting electric energy via this electrode unit 15 to this N-shaped doped layer 12, p-type doped layer 14, electric energy forms the electronics being positioned at this N-shaped doped layer 12 and the electric hole being positioned at this p-type doped layer 14 respectively when this N-shaped doped layer 12, p-type doped layer 14, the right compound in electronics-electric hole is carried out in electronics and electric hole the most finally this active layers 13, and electrical potential energy is discharged by the right compound in electronics-electric hole and be converted to luminous energy and outwards send.
But the shortcoming of this light-emitting diode is that single active layers 13 layers of body thickness are blocked up, although can supplied for electronic-electric hole to staying in this active layers 13 for a long time, but electronics is easily separated with the wave function in electric hole, electronics-electric hole is low to compound probability, and namely internal quantum is extremely low; And if during the very thin thickness of simple layer active layers 13, the Wave function overlap chance in electronics and electric hole is many, but opposing electronic-electric hole is to the chance of only once compound, still effectively cannot improve internal quantum.
Consult Fig. 2, therefore in recent years, solid-state light emitting element, particularly the structural development of light-emitting diode is by originally single active body layer by layer, change into and comprise the active layers cellular construction 16 that more barrier layers 162 (barrierlayer) and multilayer are located in the well layer 161 (welllayer) between two adjacent barrier layers 162 respectively, each well layer 161 significantly reduced by thickness and the cooperation of barrier layer 162, when electrode unit 15 cooperation provides electric energy, electronics-electric hole is to being confined in described well layer 161 by the barrier layer 162 of high energy barrier, under the environment that the Wave function overlap in electronics and electric hole is high, also the well layer 161 supplied for electronic-electric hole of multilayer is had to combining again, to increase electronics-electric hole to the probability reencountered and combine, and improve internal quantum.
Compared with the light-emitting diode of initial stage single active layers 13 structure, comprise the internal quantum of more barrier layers 162 and the light-emitting diode of the active layers cellular construction 16 of well layer 161, obviously promote because the right probability of compound again of electronics and electric hole increases.
Also therefore, the expert knowing the art confirms to have more barrier layers 162 and has higher internal quantum with the light-emitting diode of the active layers cellular construction 16 of well layer 161, simultaneously, when the thickness of well layer 161 is thinner, except avoiding, electronics electricity hole wave function is excessively separated, also can strengthen carrier limited ability, therefore the internal quantum of become element also can be higher; But, continue well layer 161 described in thinning and can not improve internal quantum efficiency completely, mainly because when well layer 161 is thinning, open ended carrier number tails off relatively in described well layer 161, derives the problems such as carrier overflow on the contrary.Therefore, how to have good carrier limited ability concurrently and avoid the problem of carrier overflow to become one of art for this reason large problem.
Summary of the invention
Although the limited ability of carrier is determined by the thickness of well layer, the barrier layer thickness adjacent with arbitrary well layer can have influence on the crystalloid amount of heap of stone forming this well layer, and then affects the luminous efficiency of components integers.
So, inventor finds that the thickness degree of well layer is not only considered in the lifting of internal quantum, the more important thing is, also needs to consider the thickness proportion between well layer and barrier layer, and this thickness proportion in a specific scope, really effectively need could promote its internal quantum.The object of the present invention is to provide the solid-state light emitting element that a kind of internal quantum is high.
Solid-state light emitting element of the present invention comprises: one deck first type doped layer, one make moving cell, one deck Second-Type doped layer, an and electrode unit.
This is arranged on this first type doped layer also along sequentially forming most layer barrier layer away from this first type doped layer direction as moving cell, and most layer to be folded in respectively between two adjacent barrier layers and to convert electrical energy into the well layer of luminous energy when accepting electric energy, every one deck well layer and adjacent and near between the barrier layer of this first type doped layer side thickness proportion are not less than 0.4 and are not more than 1, this Second-Type doped layer is arranged at this and does on moving cell and to become opposite-sign with this first type doped layer, this electrode unit and this first type doped layer, Second-Type doped layer electrical connection and can coordinating sends from extraneous electric energy as moving cell this.
Preferably, solid-state light emitting element of the present invention, this has the barrier layer being not less than 5 layers as moving cell.
Preferably, solid-state light emitting element of the present invention, this has the barrier layer being not more than 30 layers as moving cell.
Preferably, solid-state light emitting element of the present invention, in described well layer, the thickness of the well layer of this Second-Type doped layer the most contiguous is greater than the average thickness of all the other well layer.
Preferably, solid-state light emitting element of the present invention, in described well layer, the thickness of the well layer of this Second-Type doped layer the most contiguous is greater than 1.1 times of the average thickness of all the other well layer.
Preferably, solid-state light emitting element of the present invention, in described well layer, the thickness of the well layer of this Second-Type doped layer the most contiguous is less than 3 times of the average thickness of all the other well layer.
Preferably, solid-state light emitting element of the present invention, this thickness making every one deck well layer of moving cell is 2.5nm ~ 5nm.
Preferably, solid-state light emitting element of the present invention, in described barrier layer, the thickness of the barrier layer of this first type doped layer the most contiguous is greater than the thickness of the barrier layer of this Second-Type doped layer the most contiguous in described barrier layer.
Preferably, solid-state light emitting element of the present invention, in described barrier layer the barrier layer of this first type doped layer the most contiguous the more described barrier layer of thickness in the thick 5nm ~ 10nm of thickness of barrier layer of this Second-Type doped layer the most contiguous.
Preferably, solid-state light emitting element of the present invention, the indium gallium nitride based compound that this well layer is 10% ~ 40% (molar percentage) by indium content is mainly to form.
Preferably, solid-state light emitting element of the present invention also comprises one and is arranged at this first type doped layer and makes the base material on one of them surface of moving cell away from this, this covers the partial area on another surface of this first type doped layer as moving cell, this electrode unit comprise one be arranged at this first type doped layer away from the surface of this base material not for this makes first electrode in region that moving cell covers, and the second electrode of this Second-Type doped layer electrical connection.
Preferably, solid-state light emitting element of the present invention, this electrode unit comprises one and is placed in this first type doped layer and makes first electrode on the surface of moving cell away from this, and the second electrode of this Second-Type doped layer electrical connection.
Preferably, solid-state light emitting element of the present invention also comprises one and is placed between this Second-Type doped layer and this second electrode for the current-diffusion layer that electric current laterally evenly spreads.
Beneficial effect of the present invention is: utilize and to be arranged on this first type doped layer staggered predetermined thickness proportional limit between stacked well layer and barrier layer and to be formed on and to be not less than 0.4 and to be not more than 1, increase electronics-electric hole to the probability combined again, and then reach effect of lift elements internal quantum and components integers luminosity.
Accompanying drawing explanation
Fig. 1 is a cross-sectional schematic, and a kind of solid-state light emitting element is in the past described;
Fig. 2 is a cross-sectional schematic, and another kind of solid-state light emitting element is in the past described;
Fig. 3 is a cross-sectional schematic, and a preferred embodiment of solid-state light emitting element of the present invention is described;
Fig. 4 is a cross-sectional schematic, illustrates that the preferred embodiment of solid-state light emitting element of the present invention also comprises one deck current-diffusion layer;
Fig. 5 is a cross-sectional schematic, illustrates that the present invention may also be vertical-type solid-state light emitting element.
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in detail.
Consult Fig. 3, a preferred embodiment of solid-state light emitting element of the present invention, comprise a base material 21, one deck is formed at the first type doped layer 22 (i.e. N-shaped doped layer on this base material 21, in following content, represent with N-shaped doped layer), one with this N-shaped doped layer link make moving cell 23, one deck is formed at this Second-Type doped layer 24 (i.e. p-type doped layer doing on moving cell 23, in following content, represent with p-type doped layer), and an electrode unit 25 be electrically connected with this n, p-type doped layer.
This N-shaped doped layer is arranged on this base material 21, and formed based on n-type semiconductor, and in the preferred embodiment, this n-type semiconductor is the gallium nitride (GaN) of N-shaped.
This is made moving cell 23 and up forms most layer barrier layer 232 and most layer well layer 231 from the partial area of this N-shaped doped layer end face, and the partial area of the end face of this N-shaped doped layer is not owing to being made moving cell 23 to cover and exposed by this; In more detail, described barrier layer 232 and described well layer 231 are upwards staggered stacked from this N-shaped doped layer end face, utilize between barrier layer 232 between two wherein a well layer 231 by its interval.Therefore, this does that moving cell 23 is minimum comprises two layers of barrier layer 232.In the preferred embodiment, the main material of described well layer 231 is InGaNs, and the main material of described barrier layer 232 is gallium nitride.
In addition, do in moving cell 23 at this, each well layer 231 and adjacent and near between the barrier layer 232 of N-shaped doped layer side thickness proportion are not less than 0.4 and are not more than 1.
This p-type doped layer is formed at this and does on moving cell 23, and this p-type doped layer formed with p-type semiconductor material, and in the preferred embodiment, this p-type semiconductor material is the gallium nitride of p-type.
This electrode unit 25 comprises one and is arranged at this N-shaped doped layer end face and is not made first electrode 251 in the region that moving cell 23 covers by this, and second electrode 252 be electrically connected with this p-type doped layer, this first electrode 251, second electrode 252 sends from extraneous electric energy to this n, p-type doped layer.
When the first electrode 251 of this electrode unit 25 and the second electrode 252 accept extraneous electric energy, electric energy recrosses described barrier layer 232 from this first electrode 251, second electrode 252 through this n, p-type doped layer and is limited in this well layer 231, be limited to electronics electricity hole in described well layer 231 again in conjunction with generation luminous energy, the part luminous energy that produces is outwards luminous through this p-type doped layer forward.
When the thickness being folded in the well layer 231 between two between adjacent barrier layer 232 adjacent with this and near N-shaped doped layer side barrier layer 232 thickness predetermined ratio lower than 0.4 time, the problems such as the few or carrier overflow of open ended carrier number can be produced, cause luminous efficiency not good.
When the thickness being folded in the well layer 231 between two between adjacent barrier layer 232 adjacent with this and near N-shaped doped layer side barrier layer 232 thickness predetermined ratio higher than 1 time, forming described barrier layer 232 easily causes adjacent barrier layer 232 not mate with the lattice constant between well layer 231 with the process of described well layer 231, cause the existence having compression stress (compressivestress) in quantum well, and produce compression strain; Add that described barrier layer 232 is different from the growth temperature of described well layer 231, also make the indium component distributing in described well layer 231 uneven so thickness proportion between described barrier layer 232 and adjacent well layer 231 is too high.Therefore, what is more, when the thickness being folded in the well layer 231 between two between adjacent barrier layer 232 adjacent with this and near N-shaped doped layer side barrier layer 232 thickness predetermined ratio higher than 1 time, in described well layer 231, the elastic strain energy of accumulation is too high, the stress that the form of easily arranging (dislocation) by difference reduces total free energy and accumulates, and cause brilliant defect of heap of stone, luminous efficiency also can be caused low.
When the thickness being folded in the well layer 231 between two between adjacent barrier layer 232 is adjacent with this and when being not less than 0.4 near the predetermined ratio of thickness of the barrier layer 232 of N-shaped doped layer side and being not more than 1, electronics and electric hole are limited in described well layer 231, but can not limit because well layer 231 is too thin can be spacing carrier amount, or cause carrier to overflow outside well layer 231; Therefore, electronics-electric hole is high to the probability combined, and impels the internal quantum of this preferred embodiment to promote, and and then the luminosity of increase components integers.
Because this makes total number of plies of moving cell 23 the more, the luminous efficiency of components integers is higher; Therefore, preferably, this is made moving cell 23 and has the barrier layer 232 being not less than 5 layers.
In addition, if this total number of plies making moving cell 23 is too many, then indefinite extension this make the processing time of moving cell, large spoke increases cost of manufacture and produces the element required total time spent in a disguised form on the contrary; So more preferably, this is made moving cell 23 and has the barrier layer 232 being not more than 30 layers.
Need explanatorily, each well layer 231 and adjacent and near between the barrier layer 232 of N-shaped doped layer side thickness proportion are not less than 0.5 and are not more than 1, and by more accurately adjusting the thickness proportion between each well layer 231 and adjacent barrier layer 232, increase electronics electricity hole to the probability combined again, and there is good crystalloid amount of heap of stone simultaneously.
It is worth mentioning that again, this thickness making each well layer 231 of moving cell 23 is 2.5nm ~ 5nm, coordinate the thickness of the barrier layer 232 of suitable thickness again, can be limited in described well layer 231 for the electronics electricity hole of the present invention when start, not cause again carrier to overflow outside described well layer 231; This well layer 231 making moving cell 23 is formed based on the indium gallium nitride based compound of indium content by 10% ~ 40% (molar percentage), can send the light that wave-length coverage is 430nm ~ 490nm for the present invention when accepting electric energy.
Consult Fig. 4, what illustrate is, when in described well layer 231, the thickness of the well layer 231 ' of this p-type doped layer the most contiguous is greater than the average thickness of all the other well layer 231, well layer 231 ' by this p-type doped layer the most contiguous carries more carrier, to increase more participation electronics-electric hole to the chance combined again, thus promote whole interior quantum efficiency and the external light emission efficiency of light emitting diode construction.More preferably, the thickness of the well layer 231 ' of this p-type doped layer the most contiguous is greater than the average thickness 1.1 times of all the other well layer 231; Again more preferably, when the thickness of the well layer 231 ' of this p-type doped layer the most contiguous is greater than the average thickness 1.1 times of all the other well layer 231 and is less than 3 times of the average thickness of all the other well layer 231, the well layer 231 ' of this p-type doped layer the most contiguous coordinates all the other well layer 231 can first carry more carrier, recycle all the other well layer 231 carrier is spacing, increase electronics electricity hole Wave function overlap amount, to promote electronics electricity hole to the chance combined again.
It should be noted that again, the barrier layer 232 of moving cell 23 is made and well layer 231 is formed in the mode of crystalline substance of heap of stone due to the present invention, and unnecessary stress can be produced in the process forming described layer body, when the thickness that this makes the barrier layer 232 ' of this N-shaped doped layer the most contiguous in the barrier layer 232 of moving cell 23 is greater than the thickness of other barrier layers 232, or be at least greater than the barrier layer 232 of this p-type doped layer the most contiguous in described barrier layer 232 " thickness time; can for the unnecessary Stress Release produced in brilliant processing procedure of heap of stone, and described barrier layer 232 and the unstressed hindering terrain of well layer 231 be become.Preferably, in described barrier layer 232 barrier layer 232 ' of this N-shaped doped layer the most contiguous the more described barrier layer of thickness 232 in the barrier layer 232 of this p-type doped layer the most contiguous " the thick 5nm ~ 10nm of thickness.
It should be noted that again, solid-state light emitting element of the present invention can also set up a current-diffusion layer 26 between p-type doped layer and the second electrode 252, this current-diffusion layer 26 formed with transparent and conductive material, for transmitting the electric current laterally evenly diffusion entering this current-diffusion layer 26, can to flow into when this makes moving cell 23 for electric current can more even and generalization again.
When the first electrode 251 of this electrode unit 25 and the second electrode 252 accept extraneous electric energy, electric energy is from this first electrode 251, second electrode 252 and n, p-type doped layer and be limited in described well layer 231,231 ', be limited to electronics electricity hole in described well layer 231,231 ' again in conjunction with generation luminous energy, the part luminous energy that produces through this p-type doped layer and this transparent current-diffusion layer 26 forward outwards luminous.
Coordinate and consult Fig. 4 and Fig. 5, if do to classify with the position set by the first electrode 251 of this electrode unit 25 and the second electrode 252, Fig. 4 is the light-emitting diode belonging to lateral type, this first electrode 251 is replaced this base material 21 and is arranged at this N-shaped doped layer bottom surface by Fig. 5, is the light-emitting diode belonging to vertical-type.
In details of the words, the base material 21 of the light-emitting diode of lateral type is arranged at N-shaped doped layer away from the surface making moving cell 23, do the partial area that moving cell 23 covers another surface of N-shaped doped layer, first electrode 251 of electrode unit 25 be arranged at N-shaped doped layer away from the surface of base material 21 not for doing the region that moving cell 23 covers, when omitting this current-diffusion layer 26, then the second electrode 252 of electrode unit 25 is directly electrically connected with p-type doped layer; First electrode 251 of the electrode unit 25 of the light-emitting diode of described vertical-type is arranged at away from the surface making moving cell 23 in N-shaped doped layer, and similarly, when omitting this current-diffusion layer 26, then the second electrode 252 of electrode unit 25 is electrically connected with p-type doped layer.
Comprehensive the above, the present invention mainly finds existing solid-state light emitting element, when particularly light-emitting diode promotes internal quantum, thinner toward well layer 231 simply, well layer 231 is moved towards with the mistake of the lower development of barrier layer 232 Thickness Ratio, and a kind of thickness of the well layer 231 of moving cell 23 and THICKNESS CONTROL of barrier layer 232 this done is proposed in predetermined ratio, coordinate the well layer 231 of this p-type doped layer the most contiguous thicker in limit carrier overflow again, and the barrier layer 232 of this N-shaped doped layer the most contiguous thickens to reduce brilliant this of heap of stone makes the technological means of the stress produced in the process of moving cell 23, and can the Wave function overlap amount in supplied for electronic-electric hole high, carrier can not be made to overflow outside described well layer 231 simultaneously, to increase electronics-electric hole to the chance combined, the internal quantum of effective lift elements, and then promote the luminosity of components integers, really effect of the present invention can be reached.
Claims (13)
1. a solid-state light emitting element, it is characterized in that: this solid-state light emitting element comprises one deck first type doped layer, make moving cell for one, one deck Second-Type doped layer, and an electrode unit, this is arranged on this first type doped layer also along sequentially forming more barrier layers away from this first type doped layer direction as moving cell, and multilayer to be folded in respectively between two adjacent barrier layers and to convert electrical energy into the well layer of luminous energy when accepting electric energy, every one deck well layer and adjacent and near between the barrier layer of this first type doped layer side thickness proportion are not less than 0.4 and are not more than 1, this Second-Type doped layer is arranged at this and does on moving cell and to become opposite-sign with this first type doped layer, this electrode unit and this first type doped layer, Second-Type doped layer electrical connection and can coordinate and send from extraneous electric energy to this as moving cell, and the thickness of the well layer of this Second-Type doped layer the most contiguous is greater than the average thickness of all the other well layer in described well layer.
2. a solid-state light emitting element, it is characterized in that: this solid-state light emitting element comprises one deck first type doped layer, make moving cell for one, one deck Second-Type doped layer, and an electrode unit, this is arranged on this first type doped layer also along sequentially forming more barrier layers away from this first type doped layer direction as moving cell, and multilayer to be folded in respectively between two adjacent barrier layers and to convert electrical energy into the well layer of luminous energy when accepting electric energy, every one deck well layer and adjacent and near between the barrier layer of this first type doped layer side thickness proportion are not less than 0.4 and are not more than 1, this Second-Type doped layer is arranged at this and does on moving cell and to become opposite-sign with this first type doped layer, this electrode unit and this first type doped layer, Second-Type doped layer electrical connection and can coordinate and send from extraneous electric energy to this as moving cell, and the thickness of the barrier layer of this first type doped layer the most contiguous is greater than the thickness of the barrier layer of this Second-Type doped layer the most contiguous in described barrier layer in described barrier layer.
3. solid-state light emitting element according to claim 1 and 2, is characterized in that: this has the barrier layer being not less than 5 layers as moving cell.
4. solid-state light emitting element according to claim 3, is characterized in that: this has the barrier layer being not more than 30 layers as moving cell.
5. solid-state light emitting element according to claim 1 and 2, is characterized in that: in described well layer, the thickness of the well layer of this Second-Type doped layer the most contiguous is greater than 1.1 times of the average thickness of all the other well layer.
6. solid-state light emitting element according to claim 5, is characterized in that: in described well layer, the thickness of the well layer of this Second-Type doped layer the most contiguous is less than 3 times of the average thickness of all the other well layer.
7. solid-state light emitting element according to claim 1 and 2, is characterized in that: this thickness making every one deck well layer of moving cell is 2.5nm ~ 5nm.
8. solid-state light emitting element according to claim 2, is characterized in that: in described barrier layer the barrier layer of this first type doped layer the most contiguous the more described barrier layer of thickness in the thick 5nm ~ 10nm of thickness of barrier layer of this Second-Type doped layer the most contiguous.
9. solid-state light emitting element according to claim 1 and 2, is characterized in that: the indium gallium nitride based compound that this well layer is 10% ~ 40% (molar percentage) by indium content is mainly to form.
10. solid-state light emitting element according to claim 1 and 2, it is characterized in that: this solid-state light emitting element also comprises one and is arranged at this first type doped layer and makes the surperficial base material of of moving cell away from this, this covers the partial area on another surface of this first type doped layer as moving cell, this electrode unit comprise one be arranged at this first type doped layer away from the surface of this base material not for this makes first electrode in region that moving cell covers, and second electrode be electrically connected with this Second-Type doped layer.
11. solid-state light emitting elements according to claim 10, is characterized in that: this solid-state light emitting element also comprises one deck and is arranged between this Second-Type doped layer and this second electrode for the current-diffusion layer that electric current laterally evenly spreads.
12. solid-state light emitting elements according to claim 1 and 2, it is characterized in that: this electrode unit comprises one and is arranged in this first type doped layer and makes first electrode on the surface of moving cell away from this, and second electrode be electrically connected with this Second-Type doped layer.
13. solid-state light emitting elements according to claim 12, is characterized in that: this solid-state light emitting element also comprises one deck and is arranged between this Second-Type doped layer and this second electrode for the current-diffusion layer that electric current laterally evenly spreads.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1773792A (en) * | 2004-11-10 | 2006-05-17 | 三菱电机株式会社 | Semiconductor light-emitting device |
| CN101527341A (en) * | 2008-03-07 | 2009-09-09 | 先进开发光电股份有限公司 | III-family nitrogen compound semiconductor light-emitting diode |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1773792A (en) * | 2004-11-10 | 2006-05-17 | 三菱电机株式会社 | Semiconductor light-emitting device |
| CN101527341A (en) * | 2008-03-07 | 2009-09-09 | 先进开发光电股份有限公司 | III-family nitrogen compound semiconductor light-emitting diode |
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