CN103178170A - Solid-state light emitting element - Google Patents
Solid-state light emitting element Download PDFInfo
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- CN103178170A CN103178170A CN201110438902XA CN201110438902A CN103178170A CN 103178170 A CN103178170 A CN 103178170A CN 201110438902X A CN201110438902X A CN 201110438902XA CN 201110438902 A CN201110438902 A CN 201110438902A CN 103178170 A CN103178170 A CN 103178170A
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- 230000004888 barrier function Effects 0.000 claims description 75
- 239000000463 material Substances 0.000 claims description 14
- 238000009792 diffusion process Methods 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 8
- 229910052738 indium Inorganic materials 0.000 claims description 7
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 6
- 229910002601 GaN Inorganic materials 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 230000000903 blocking effect Effects 0.000 abstract 4
- 230000003287 optical effect Effects 0.000 abstract 1
- 230000005611 electricity Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 239000004575 stone Substances 0.000 description 6
- 230000005428 wave function Effects 0.000 description 6
- 238000010276 construction Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000001413 cellular effect Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
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Abstract
A solid-state light emitting element comprises a first-type doping layer, an actuating unit, a second-type doping layer and an electrode unit. The actuating unit is formed on the first-type doping layer, multiple blocking layers and multiple well layers are sequentially formed along the direction away from the first-type doping layer, wherein the multiple well layers are respectively clamped between every two adjacent blocking layers and can convert electrical energy into optical energy when receive the electrical energy, the thickness proportion between each well layer and each blocking layer is not smaller than 0.4 and not larger than 1, the second-type doping layer is arranged on the actuating unit and is opposite to the first-type doping layer in electrical property, and the electrode unit is electrically connected with the first-type doping layer and the second-type doping layer and can be matched with the actuating unit to transmit the electrical energy from the outside. By means of pre-setting the thickness proportion between each well layer and each blocking layer, the combining probability of an electron-electron hole pair is improved, the quantum efficiency inside an element is improved, and the luminance brightness of the element is further improved.
Description
Technical field
The present invention relates to a kind of light-emitting component, particularly relate to a kind of solid-state light emitting element.
Background technology
Consult Fig. 1, in the light-emitting diode early stage of development, light-emitting diode comprises that base material 11, an one deck are formed at N-shaped doped layer 12 (n-type doped layer), one deck on this base material 11 and are formed at active layers 13 (active layer), one deck on this N-shaped doped layer 12 and are formed at p-type doped layer 14 (p-type doped layer) on this active layers 13, and one is electrically connected to this N-shaped doped layer 12 and p-type doped layer 14 respectively and can transmits the electrode unit 15 of the electric energy that comes from the outside.
When via 15 pairs of these N-shaped doped layers 12 of this electrode unit, p-type doped layer 14 transmission electric energy, form respectively the electronics that is positioned at this N-shaped doped layer 12 and the electric hole that is positioned at this p-type doped layer 14 when this N-shaped doped layer 12 of electric energy process, p-type doped layer 14, right compound in electronics-electric hole carried out in electronics and electric hole this active layers 13 the most finally, outwards sends and electrical potential energy is discharged and is converted to luminous energy by right compound in electronics-electric hole.
But the shortcoming of this light-emitting diode is that 13 layers of body thickness of single active layers are blocked up, although but supplied for electronic-electric hole is to staying in for a long time this active layers 13, but electronics easily separates with the wave function in electric hole, electronics-electric hole is low to compound probability, and namely internal quantum is extremely low; And if during the very thin thickness of simple layer active layers 13, the Wave function overlap chance in electronics and electric hole is many, but internal quantum to compound chance once only, still can't effectively be improved in electronics-electric hole relatively.
consult Fig. 2, therefore in recent years, solid-state light emitting element, particularly the structural development of light-emitting diode is with originally single active body layer by layer, change into and comprise that multilayer barrier layer 162 (barrier layer) and multilayer are located in respectively the active layers cellular construction 16 of the well layer 161 (well layer) of 162 of two adjacent barrier layers, each the well layer 161 that significantly reduces by thickness and the cooperation of barrier layer 162, when electrode unit 15 cooperations provide electric energy, electronics-electric hole is to being confined in described well layer 161 by the barrier layer 162 of high energy barrier, under the high environment of the Wave function overlap in electronics and electric hole, well layer 161 supplied for electronic of multilayer-electric hole is also arranged to combination again, to increase electronics-electric hole to reencountering and the probability of combination, and the raising internal quantum.
The light-emitting diode of single active layers 13 structures is compared with the initial stage, comprises the internal quantum of multilayer barrier layer 162 and the light-emitting diode of the active layers cellular construction 16 of well layer 161, because the right compound probability again in electronics and electric hole increases and obviously lifting.
Also therefore, the light-emitting diode that the expert who knows the art has confirmed to have multilayer barrier layer 162 and the active layers cellular construction 16 of well layer 161 has higher internal quantum, simultaneously, when the thickness of well layer 161 is thinner, electronics electricity hole wave function is excessively separated except avoiding, also can strengthen carrier limitation ability, therefore become the internal quantum of element also can be higher; But, continue the described well layer 161 of thinning and can not improve internal quantum efficiency fully, be mainly that in described well layer 161, open ended carrier number tails off relatively, derives on the contrary the problems such as carrier overflow because during 161 attenuation of well layer.Therefore, how having good carrier concurrently limits to ability and avoids the problem of carrier overflow to become a large problem of art for this reason.
Summary of the invention
Although the limitation ability of carrier is that the barrier layer thickness adjacent with any well layer can have influence on the crystalloid amount of heap of stone that forms this well layer by the thickness decision of well layer, and then affects the luminous efficiency of element integral body.
So, the inventor finds that the lifting of internal quantum is not the thickness degree of only considering the well layer, the more important thing is, also need consider the thickness proportion between well layer and barrier layer, and this thickness proportion needs in a specific scope, could really effectively promote its internal quantum.The object of the present invention is to provide the high solid-state light emitting element of a kind of internal quantum.
Solid-state light emitting element of the present invention comprises: one deck the first type doped layer, one are made moving cell, one deck Second-Type doped layer, and an electrode unit.
this is arranged on this first type doped layer as moving cell and the edge sequentially forms most layer barrier layer away from this first type doped layer direction, and most layers of well layer that is folded in respectively between two adjacent barrier layers and converts electrical energy into luminous energy when accepting electric energy, every one deck well layer and adjacent and be not less than 0.4 and be not more than 1 near the thickness proportion between the barrier layer of this first type doped layer one side, this Second-Type doped layer is arranged at this and does to become opposite electrical on moving cell and with this first type doped layer, this electrode unit and this first type doped layer, the Second-Type doped layer is electrically connected to and can coordinates this is sent from extraneous electric energy as moving cell.
Preferably, solid-state light emitting element of the present invention, this has as moving cell and is not less than the barrier layer of 5 layers.
Preferably, solid-state light emitting element of the present invention, this has as moving cell and is not more than the barrier layer of 30 layers.
Preferably, solid-state light emitting element of the present invention, in described well layer, the thickness of the well layer of the most contiguous this Second-Type doped layer is greater than the average thickness of all the other well layers.
Preferably, solid-state light emitting element of the present invention, in described well layer, the thickness of the well layer of the most contiguous this Second-Type doped layer is greater than 1.1 times of the average thickness of all the other well layers.
Preferably, solid-state light emitting element of the present invention, in described well layer, the thickness of the well layer of the most contiguous this Second-Type doped layer is less than 3 times of the average thickness of all the other well layers.
Preferably, solid-state light emitting element of the present invention, this thickness of making every one deck well layer of moving cell is 2.5nm～5nm.
Preferably, solid-state light emitting element of the present invention, in described barrier layer, the thickness of the barrier layer of the most contiguous this first type doped layer is greater than the thickness of the barrier layer of the most contiguous this Second-Type doped layer in described barrier layer.
Preferably, solid-state light emitting element of the present invention, the thick 5nm～10nm of thickness of the barrier layer of the most contiguous this Second-Type doped layer in the more described barrier layer of thickness of the barrier layer of the most contiguous this first type doped layer in described barrier layer.
Preferably, solid-state light emitting element of the present invention, the indium gallium nitride based compound that this well layer is 10%～40% (molar percentage) by indium content is main formation.
Preferably, solid-state light emitting element of the present invention also comprises one and is arranged at this first type doped layer and makes one of them surperficial base material of moving cell away from this, this covers the part zone on another surface of this first type doped layer as moving cell, this electrode unit comprises that one is arranged at this first type doped layer away from do not make first electrode in the zone of moving cell covering and second electrode that this Second-Type doped layer is electrically connected in the surface of this base material for this.
Preferably, solid-state light emitting element of the present invention, this electrode unit comprise that one is placed in this first type doped layer and makes first electrode on the surface of moving cell away from this, and second electrode that this Second-Type doped layer is electrically connected to.
Preferably, solid-state light emitting element of the present invention comprises that also one is placed on the current-diffusion layer that laterally evenly spreads for electric current between this Second-Type doped layer and this second electrode.
Beneficial effect of the present invention is: utilize to be arranged on this first type doped layer staggered stacked well layer and the predetermined thickness proportional limit between barrier layer and to be formed on and to be not less than 0.4 and be not more than 1, increase electronics-electric hole to the probability of combination again, and then reach the effect of lift elements internal quantum and the brightness of element Integral luminous.
Description of drawings
Fig. 1 is a cross-sectional schematic, and a kind of solid-state light emitting element in the past is described;
Fig. 2 is a cross-sectional schematic, and another kind of solid-state light emitting element in the past is described;
Fig. 3 is a cross-sectional schematic, and a preferred embodiment of solid-state light emitting element of the present invention is described;
Fig. 4 is a cross-sectional schematic, illustrates that the preferred embodiment of solid-state light emitting element of the present invention also comprises one deck current-diffusion layer;
But Fig. 5 is a cross-sectional schematic, the present invention is described also the vertical-type solid-state light emitting element.
Embodiment
The present invention is described in detail below in conjunction with drawings and Examples.
Consult Fig. 3, a preferred embodiment of solid-state light emitting element of the present invention, comprising the first type doped layer 22 that base material 21, an one deck is formed on this base material 21 (is the N-shaped doped layer, in following content, represent with the N-shaped doped layer), to be formed at this Second-Type doped layer 24 of doing on moving cell 23 (be the p-type doped layer to do a moving cell 23, one deck that links with this N-shaped doped layer, in following content, represent with the p-type doped layer), and an electrode unit 25 that is electrically connected to this n, p-type doped layer.
This N-shaped doped layer is arranged on this base material 21, and is consisted of by main take the N-shaped semi-conducting material, in this preferred embodiment, and the gallium nitride (GaN) that this N-shaped semi-conducting material is N-shaped.
This is made moving cell 23 and up forms most layer barrier layer 232 and most layer well layers 231 from the part zone of this N-shaped doped layer end face, and the part zone of the end face of this N-shaped doped layer is exposed owing to not done by this that moving cell 23 covers; In more detail, described barrier layer 232 is upwards staggered stacked from this N-shaped doped layer end face with described well layer 231,232 utilizations of barrier layer in twos wherein a well layer 231 with its interval.Therefore, this does that moving cell 23 is minimum comprises two layers of barrier layer 232.In this preferred embodiment, the main material of described well layer 231 is InGaNs, and the main material of described barrier layer 232 is gallium nitride.
In addition, make in moving cell 23 each well layer 231 and adjacent and be not less than 0.4 and be not more than 1 near the thickness proportion of 232 of the barrier layers of N-shaped doped layer one side at this.
This p-type doped layer is formed at this and does on moving cell 23, and this p-type doped layer is consisted of with the p-type semi-conducting material, and in this preferred embodiment, this p-type semi-conducting material is the gallium nitride of p-type.
This electrode unit 25 comprises first electrode 251 that is arranged at this N-shaped doped layer end face and is not done the zone that moving cell 23 covers by this, and second electrode 252 that is electrically connected to this p-type doped layer, the electric energy that this first electrode 251, the second electrode 252 transmission come from the outside is to this n, p-type doped layer.
When the first electrode 251 of this electrode unit 25 and the second electrode 252 are accepted extraneous electric energy, electric energy recrosses described barrier layer 232 and is limited in this well layer 231 through this n, p-type doped layer from this first electrode 251, the second electrode 252, be limited to electronics electricity hole in described well layer 231 again in conjunction with producing luminous energy, the part luminous energy that produces is outwards luminous through this p-type doped layer forward.
When the thickness of the well layer 231 that is folded in 232 of adjacent barrier layers in twos adjacent with this and near the predetermined ratio of the thickness of the barrier layer 232 of N-shaped doped layer one side lower than 0.4 the time, can produce the problems such as the few or carrier overflow of open ended carrier number, cause luminous efficiency not good.
When the thickness of the well layer 231 that is folded in 232 of adjacent barrier layers in twos adjacent with this and near the predetermined ratio of the thickness of the barrier layer 232 of N-shaped doped layer one side higher than 1 the time, the process that forms described barrier layer 232 and described well layer 231 easily causes the lattice constant of 231, adjacent barrier layer 232 and well layer not mate, cause having the existence of compression stress (compressive stress) in quantum well, and produce compression strain; Add the above barrier layer 232 different from the growth temperature of described well layer 231, also make the indium component distributing in described well layer 231 inhomogeneous so the thickness proportion of 231, described barrier layer 232 and adjacent well layer is too high.Therefore, what is more, when the thickness of the well layer 231 that is folded in 232 of adjacent barrier layers in twos adjacent with this and near the predetermined ratio of the thickness of the barrier layer 232 of N-shaped doped layer one side higher than 1 the time, the elastic strain energy of described well layer 231 interior accumulation is too high, the stress that easily reduces total free energy and accumulate by the difference form of (dislocation) of arranging, and cause brilliant defective of heap of stone, also can cause luminous efficiency low.
Adjacent with this and be not less than 0.4 and when being not more than 1 near the predetermined ratio of the thickness of the barrier layer 232 of N-shaped doped layer one side when the thickness of the well layer 231 that is folded in 232 of adjacent barrier layers in twos, electronics and electric hole are limited in described well layer 231, but can not limit because well layer 231 is too thin can be spacing the carrier amount, or cause carrier to overflow outside well layer 231; Therefore, electronics-electric hole is high to the probability of combination, impels the internal quantum of this preferred embodiment to promote, and and then increases the luminosity of element integral body.
Due to this total number of plies of making moving cell 23 the more, the luminous efficiency of element integral body is higher; Therefore, preferably, this is made moving cell 23 and has the barrier layer 232 that is not less than 5 layers.
In addition, if this total number of plies of making moving cell 23 is too many, infinitely extend the processing procedure time that this makes moving cell, large spoke increases cost of manufacture and the total time of producing the required cost of element in a disguised form on the contrary; So more preferably, this is made moving cell 23 and has the barrier layer 232 that is not more than 30 layers.
Need explanatorily, each well layer 231 and adjacent and be not less than 0.5 and be not more than 1 near the thickness proportion of 232 of the barrier layers of N-shaped doped layer one side, and can be by more accurately adjusting the thickness proportion of 232 of each well layer 231 and adjacent barrier layers, increase electronics electricity hole to the probability of combination again, and have simultaneously good crystalloid amount of heap of stone.
It is worth mentioning that again, this thickness of making each well layer 231 of moving cell 23 is 2.5nm～5nm, the thickness that coordinates again the barrier layer 232 of suitable thickness, the electronics electricity hole for the present invention when start can be limited in described well layer 231, does not cause again carrier to overflow outside described well layer 231; This well layer 231 of making moving cell 23 is consisted of by main take the indium gallium nitride based compound of indium content as 10%～40% (molar percentage), can send the light that wave-length coverage is 430nm～490nm when accepting electric energy for the present invention.
Consult Fig. 4, what specify is, when the thickness of the well layer 231 ' of the most contiguous this p-type doped layer in described well layer 231 during greater than the average thickness of all the other well layers 231, can be by well layer 231 ' the more carrier of carrying of the most contiguous this p-type doped layer, increasing more participation electronics-electric hole to the chance of combination again, thereby promote whole interior quantum efficiency and the external light emission efficiency of light emitting diode construction.More preferably, the thickness of the well layer 231 ' of the most contiguous this p-type doped layer is greater than 1.1 times of the average thicknesss of all the other well layers 231; Again more preferably, the thickness of the well layer 231 ' of the most contiguous this p-type doped layer is during greater than 1.1 times of the average thicknesss of all the other well layers 231 and less than 3 times of the average thickness of all the other well layers 231, the well layer 231 ' of the most contiguous this p-type doped layer coordinates all the other well layers 231 can first carry more carrier, recycle all the other well layers 231 carrier is spacing, increase electronics electricity hole Wave function overlap amount, to promote electronics electricity hole to the chance of combination again.
It should be noted that again, barrier layer 232 and the well layer 231 of making moving cell 23 due to the present invention are to form in brilliant mode of heap of stone, and can produce unnecessary stress in the process that forms described layer body, when this thickness of making the barrier layer 232 ' of the most contiguous this N-shaped doped layer in the barrier layer 232 of moving cell 23 during greater than the thickness of other barrier layers 232, or at least greater than the barrier layer 232 of the most contiguous this p-type doped layer in described barrier layer 232 " thickness the time; can be for the unnecessary Stress Release that produces in brilliant processing procedure of heap of stone, and described barrier layer 232 and the unstressed hindering terrain of well layer 231 are become.Preferably, the barrier layer 232 of the most contiguous this p-type doped layer in the more described barrier layer 232 of thickness of the barrier layer 232 ' of the most contiguous this N-shaped doped layer in described barrier layer 232 " the thick 5nm～10nm of thickness.
It should be noted that again, solid-state light emitting element of the present invention can also be set up a current-diffusion layer 26 at p-type doped layer and 252, the second electrode, this current-diffusion layer 26 is consisted of with transparent and conductive material, for transmitting the laterally evenly diffusion of electric current enter this current-diffusion layer 26, can more even and generalization in the time of can flowing into again this and make moving cell 23 for electric current.
When the first electrode 251 of this electrode unit 25 and the second electrode 252 are accepted extraneous electric energy, electric energy is from this first electrode 251, the second electrode 252 and n, p-type doped layer and be limited in described well layer 231,231 ', be limited to electronics electricity hole in described well layer 231,231 ' again in conjunction with producing luminous energy, the part luminous energy that produces is outwards luminous through this p-type doped layer and these transparent current-diffusion layer 26 forwards.
Coordinate and consult Fig. 4 and Fig. 5, if classify with the first electrode 251 of this electrode unit 25 and the second electrode 252 set position, Fig. 4 is the light-emitting diode that belongs to lateral type, Fig. 5 replaces these base materials 21 with this first electrode 251 and is arranged at this N-shaped doped layer bottom surface, is the light-emitting diode that belongs to vertical-type.
In details of the words, the base material 21 of the light-emitting diode of lateral type is arranged at the N-shaped doped layer away from a surface making moving cell 23, do the part zone that moving cell 23 covers another surface of N-shaped doped layer, the first electrode 251 of electrode unit 25 is arranged at the N-shaped doped layer away from the zone that does not cover for making moving cell 23 in the surface of base material 21, when omitting this current-diffusion layer 26, the second electrode 252 of electrode unit 25 directly is electrically connected to the p-type doped layer; The first electrode 251 of the electrode unit 25 of the light-emitting diode of described vertical-type is arranged in the N-shaped doped layer away from the surface of making moving cell 23, and similarly, when omitting this current-diffusion layer 26, the second electrode 252 of electrode unit 25 is electrically connected to the p-type doped layer.
comprehensive the above, the present invention finds existing solid-state light emitting element, when particularly light-emitting diode promotes internal quantum, thinner toward well layer 231 simply, well layer 231 moves towards with the mistake of the lower development of barrier layer 232 Thickness Ratios, and propose a kind of with this THICKNESS CONTROL of making the thickness of well layer 231 of moving cell 23 and barrier layer 232 in predetermined ratio, coordinate again the well layer 231 of the most contiguous this p-type doped layer thicker in the overflow of restriction carrier, and the barrier layer 232 of the most contiguous this N-shaped doped layer thickens to reduce brilliant this of heap of stone and makes the technological means of the stress that produces in the process of moving cell 23, and but the Wave function overlap amount in supplied for electronic-electric hole is high, simultaneously carrier is overflowed outside described well layer 231, to increase electronics-electric hole to the chance of combination, the internal quantum of effective lift elements, and then the luminosity of enhancement element integral body, really can reach effect of the present invention.
Claims (13)
1. solid-state light emitting element, it is characterized in that: this solid-state light emitting element comprises one deck the first type doped layer, make moving cell for one, one deck Second-Type doped layer, and electrode unit, this is arranged on this first type doped layer as moving cell and the edge sequentially forms the multilayer barrier layer away from this first type doped layer direction, reach the well layer that multilayer is folded in respectively between two adjacent barrier layers and converts electrical energy into luminous energy when accepting electric energy, every one deck well layer and adjacent and be not less than 0.4 and be not more than 1 near the thickness proportion between the barrier layer of this first type doped layer one side, this Second-Type doped layer is arranged at this and does to become opposite electrical on moving cell and with this first type doped layer, this electrode unit and this first type doped layer, the Second-Type doped layer is electrically connected to and can coordinates this is sent from extraneous electric energy as moving cell.
2. solid-state light emitting element according to claim 1 is characterized in that: this has as moving cell and is not less than the barrier layer of 5 layers.
3. solid-state light emitting element according to claim 2 is characterized in that: this has as moving cell and is not more than the barrier layer of 30 layers.
4. solid-state light emitting element according to claim 1, it is characterized in that: in described well layer, the thickness of the well layer of the most contiguous this Second-Type doped layer is greater than the average thickness of all the other well layers
5. solid-state light emitting element according to claim 1 is characterized in that: in described well layer, the thickness of the well layer of the most contiguous this Second-Type doped layer is greater than 1.1 times of the average thickness of all the other well layers.
6. solid-state light emitting element according to claim 5 is characterized in that: in described well layer, the thickness of the well layer of the most contiguous this Second-Type doped layer is less than 3 times of the average thickness of all the other well layers.
7. solid-state light emitting element according to claim 1, it is characterized in that: this thickness of making every one deck well layer of moving cell is 2.5nm～5nm.
8. solid-state light emitting element according to claim 1, it is characterized in that: in described barrier layer, the thickness of the barrier layer of the most contiguous this first type doped layer is greater than the thickness of the barrier layer of the most contiguous this Second-Type doped layer in described barrier layer.
9. solid-state light emitting element according to claim 8, is characterized in that: the thick 5nm～10nm of thickness of the barrier layer of the most contiguous this Second-Type doped layer in the more described barrier layer of thickness of the barrier layer of the most contiguous this first type doped layer in described barrier layer.
10. solid-state light emitting element according to claim 1, it is characterized in that: the indium gallium nitride based compound that this well layer is 10%～40% (molar percentage) by indium content is main formation.
11. solid-state light emitting element according to claim 1, it is characterized in that: this solid-state light emitting element also comprises one and is arranged at this first type doped layer and makes the base material on a surface of moving cell away from this, this covers the part zone on another surface of this first type doped layer as moving cell, this electrode unit comprises that one is arranged at this first type doped layer away from do not make first electrode in the zone of moving cell covering and second electrode that is electrically connected to this Second-Type doped layer in the surface of this base material for this.
12. solid-state light emitting element according to claim 1 is characterized in that: this electrode unit comprises that one is arranged in this first type doped layer and makes first electrode on the surface of moving cell away from this, and second electrode that is electrically connected to this Second-Type doped layer.
13. according to claim 11 or 12 described solid-state light emitting elements is characterized in that: this solid-state light emitting element comprises that also one deck is arranged at the current-diffusion layer that laterally evenly spreads for electric current between this Second-Type doped layer and this second electrode.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1773792A (en) * | 2004-11-10 | 2006-05-17 | 三菱电机株式会社 | Semiconductor light-emitting device |
| CN101527341A (en) * | 2008-03-07 | 2009-09-09 | 先进开发光电股份有限公司 | III-family nitrogen compound semiconductor light-emitting diode |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1773792A (en) * | 2004-11-10 | 2006-05-17 | 三菱电机株式会社 | Semiconductor light-emitting device |
| CN101527341A (en) * | 2008-03-07 | 2009-09-09 | 先进开发光电股份有限公司 | III-family nitrogen compound semiconductor light-emitting diode |
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Granted publication date: 20160302 |