CN103178125B - Five-knot cascade photovoltaic cell with antireflection film - Google Patents
Five-knot cascade photovoltaic cell with antireflection film Download PDFInfo
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- CN103178125B CN103178125B CN201310065015.1A CN201310065015A CN103178125B CN 103178125 B CN103178125 B CN 103178125B CN 201310065015 A CN201310065015 A CN 201310065015A CN 103178125 B CN103178125 B CN 103178125B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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Abstract
The invention discloses a five-knot cascade photovoltaic cell with an antireflection film. The five-knot cascade photovoltaic cell is structurally characterized in that, a bottom electrode is disposed on the lower surface of an InP substrate, a GaAs sub-cell, a GaInAs sub-cell and a GaInP sub-cell are sequentially disposed on the upper surface of the Inp substrate, the GaInP sub-cell is provided with a strain compensation GaAsP/GaInAs superlattice sub-cell. A GaInP sub-cell is disposed on the strain compensation GaAsP/GaInAs superlattice sub-cell. A first antireflection layer is disposed between the GaInAs sub-cell and the GaInP sub-cell. A second antireflection layer and a third antireflection layer are disposed between the strain compensation GaAsP/GaInAs superlattice sub-cell and the GaInP sub-cell disposed on the strain compensation GaAsP/GaInAs superlattice sub-cell. A fourth antireflection layer, a fifth antireflection layer and a sixth antireflection layer are disposed on the GaInP sub-cell disposed on the strain compensation GaAsP/GaInAs superlattice sub-cell, and a top electrode is formed on the fourth antireflection layer.
Description
Technical field
The present invention relates to optical semiconductor electro-technical field, particularly relate to a kind of five knot tandem photovoltaic batteries with antireflective coating.
Background technology
Photovoltaic cell is the opto-electronic device of electric energy transform light energy, concerning photovoltaic cell, the photovoltaic cell of unijunction can only cover and utilize the sunlight of a certain wave-length coverage, in order to make full use of the photon energy of sunlight different-waveband, improve the photoelectric conversion efficiency of photovoltaic cell, generally the semi-conducting material of multiple different band gap is arranged in pairs or groups, composition multi-junction photovoltaic battery.
At present, in GaInP/GaAs/Ge tri-junction photovoltaic battery of Lattice Matching, photoelectric conversion efficiency is maximum under without optically focused condition can reach 32%.In this three junction battery, Ge battery covers wider spectrum, maximum 2 times of reaching other two junction batteries of its short circuit current, and due to the restriction by three junction battery series connection, the energy of the solar spectrum that Ge battery is corresponding is not by abundant conversion.GaInP/ (In) GaAs/InGaAsN/Ge tetra-crystal lattice match battery can obtain very high transformation efficiency in theory, but be limited by the growth difficulty reducing InGaAsN fault in material density, this four junction battery has very large challenge for Material growth.GaInP/ (In) GaAs/InGaAsN/GaAs/Ge five crystal lattice match battery also can obtain very high transformation efficiency in theory, but at present Problems existing and four junction photovoltaic batteries similar.
And photovoltaic cell carries out in the process of light conversion, the loss of reflection reduces the number of photons of photovoltaic cell unit are incidence, photovoltaic cell current density is caused to reduce, thus affect the energy conversion efficiency of battery, for improving the photoelectric conversion efficiency of battery, the reflection loss of battery surface light should be reduced, increase the transmission of light.
Summary of the invention:
For solving the problem, the present invention is intended to propose a kind of five junction photovoltaic battery structures with antireflective coating, and the above-mentioned antireflective coating adopting the present invention to propose, can reach good index matching, improves the efficiency of photovoltaic cell.
The structure with five junction photovoltaic batteries of antireflective coating that the present invention proposes is:
The lower surface of InP substrate (1) is provided with hearth electrode (14), the sub-battery of GaAs (2) is set at the upper surface of described InP substrate (1); The sub-battery of this GaAs (2) has the sub-battery of GaInAs (3); The sub-battery of this GaInAs (3) has the sub-battery of GaInP (5); The sub-battery of this GaInP (5) has the sub-battery of strain compensation GaAsP/GaInAs superlattice (6); Upper at the sub-battery of this strain compensation GaAsP/GaInAs superlattice (6) is the sub-battery of GaInP (9); Wherein, between the sub-battery of GaInAs (3) and the sub-battery of GaInP (5), there is the first antireflection layer (4); There is the second antireflection layer (7) and the 3rd antireflection layer (8) between the sub-battery of this strain compensation GaAsP/GaInAs superlattice (6) and the sub-battery of GaInP (9); The sub-battery of GaInP (9) has the 4th antireflection layer (10), the 5th antireflection layer (12) and the 6th antireflection layer (13), wherein on the 4th antireflection layer (10), is formed with top electrode (11).
Wherein, the first antireflection layer (4) is MgF
2, its refractive index is 1.36 ~ 1.40, and thickness is 40-60nm; Second antireflection layer (7) is AlGaInN film, and its refractive index is 3.2 ~ 3.4, and thickness is 30-40nm; 3rd antireflection layer (8) is ZnS film, and its refractive index is 2.1-2.3, and thickness is 50-70nm; 4th antireflection layer (10) is AlGaInN film, and its refractive index is 3.2 ~ 3.4, and thickness is 30-40nm; 5th antireflection layer (12) is Si
3n
4film, its refractive index is: 2.1-2.4, and its thickness is 50-60nm; 6th antireflection layer (13) is Ta
2o
5film, its refractive index is 2.0 ~ 2.15, and its thickness is 80-100nm.
Wherein, adopt metal material to form described hearth electrode and top electrode, this metal material such as: aluminium, silver or golden etc.
Accompanying drawing illustrates:
Fig. 1 is the five knot tandem photovoltaic batteries with antireflective coating that the present invention proposes.
Embodiment:
Below by embodiment, the five knot tandem photovoltaic batteries with antireflective coating that the present invention proposes are described in detail.
Embodiment 1
As shown in Figure 1, the five knot tandem photovoltaic batteries with antireflective coating of the present invention's proposition have following structure:
The lower surface of InP substrate (1) is provided with hearth electrode (14), the sub-battery of GaAs (2) is set at the upper surface of described InP substrate (1); The sub-battery of this GaAs (2) has the sub-battery of GaInAs (3); The sub-battery of this GaInAs (3) has the sub-battery of GaInP (5); The sub-battery of this GaInP (5) has the sub-battery of strain compensation GaAsP/GaInAs superlattice (6); Upper at the sub-battery of this strain compensation GaAsP/GaInAs superlattice (6) is the sub-battery of GaInP (9); Wherein, between the sub-battery of GaInAs (3) and the sub-battery of GaInP (5), there is the first antireflection layer (4); There is the second antireflection layer (7) and the 3rd antireflection layer (8) between the sub-battery of this strain compensation GaAsP/GaInAs superlattice (6) and the sub-battery of GaInP (9); The sub-battery of GaInP (9) has the 4th antireflection layer (10), the 5th antireflection layer (12) and the 6th antireflection layer (13), wherein on the 4th antireflection layer (10), is formed with top electrode (11).
Wherein, the first antireflection layer (4) is MgF
2, its refractive index is 1.36 ~ 1.40, and thickness is 40-60nm; Second antireflection layer (7) is AlGaInN film, and its refractive index is 3.2 ~ 3.4, and thickness is 30-40nm; 3rd antireflection layer (8) is ZnS film, and its refractive index is 2.1-2.3, and thickness is 50-70nm; 4th antireflection layer (10) is AlGaInN film, and its refractive index is 3.2 ~ 3.4, and thickness is 30-40nm; 5th antireflection layer (12) is Si
3n
4film, its refractive index is: 2.1-2.4, and its thickness is 50-60nm; 6th antireflection layer (13) is Ta
2o
5film, its refractive index is 2.0 ~ 2.15, and its thickness is 80-100nm.
Wherein, adopt metal material to form described hearth electrode and top electrode, this metal material such as: aluminium, silver or golden etc.
Embodiment 2
Introduce the preferred embodiment with five junction photovoltaic batteries of antireflective coating that the present invention proposes below, these five junction photovoltaic batteries with antireflective coating have following structure:
The lower surface of InP substrate (1) is provided with hearth electrode (14), the sub-battery of GaAs (2) is set at the upper surface of described InP substrate (1); The sub-battery of this GaAs (2) has the sub-battery of GaInAs (3); The sub-battery of this GaInAs (3) has the sub-battery of GaInP (5); The sub-battery of this GaInP (5) has the sub-battery of strain compensation GaAsP/GaInAs superlattice (6); Upper at the sub-battery of this strain compensation GaAsP/GaInAs superlattice (6) is the sub-battery of GaInP (9); Wherein, between the sub-battery of GaInAs (3) and the sub-battery of GaInP (5), there is the first antireflection layer (4); There is the second antireflection layer (7) and the 3rd antireflection layer (8) between the sub-battery of this strain compensation GaAsP/GaInAs superlattice (6) and the sub-battery of GaInP (9); The sub-battery of GaInP (9) has the 4th antireflection layer (10), the 5th antireflection layer (12) and the 6th antireflection layer (13), wherein on the 4th antireflection layer (10), is formed with top electrode (11).
Wherein, the first antireflection layer (4) is MgF
2, its refractive index is 1.38, and thickness is 50nm; Second antireflection layer (7) is AlGaInN film, and its refractive index is 3.3, and thickness is 36nm; 3rd antireflection layer (8) is ZnS film, and its refractive index is 2.15, and thickness is 60nm; 4th antireflection layer (10) is AlGaInN film, and its refractive index is 3.3, and thickness is 36nm; 5th antireflection layer (12) is Si
3n
4film, its refractive index is: 2.3, and its thickness is 55nm; 6th antireflection layer (13) is Ta
2o
5film, its refractive index is 2.1, and its thickness is 90nm.
Proposed by the invention five junction photovoltaic batteries of antireflective coating that have absorb little in application band scope, and refractive index matches, and has good optical property.
Above execution mode is to invention has been detailed introduction, but above-mentioned execution mode is not intended to limit scope of the present invention, and protection scope of the present invention is defined by the appended claims.
Claims (3)
1. there are five knot tandem photovoltaic batteries of antireflective coating, it is characterized in that: the structure of described photovoltaic cell is:
The lower surface of InP substrate (1) is provided with hearth electrode (14), the sub-battery of GaAs (2) is set at the upper surface of described InP substrate (1); The sub-battery of this GaAs (2) has the sub-battery of GaInAs (3); The sub-battery of this GaInAs (3) has the sub-battery of a GaInP (5); The sub-battery of a GaInP (5) has the sub-battery of strain compensation GaAsP/GaInAs superlattice (6); The sub-battery of this strain compensation GaAsP/GaInAs superlattice (6) are the sub-battery of the 2nd GaInP (9); Wherein, between the sub-battery of GaInAs (3) and the sub-battery of a GaInP (5), there is the first antireflection layer (4); There is the second antireflection layer (7) and the 3rd antireflection layer (8) between the sub-battery of this strain compensation GaAsP/GaInAs superlattice (6) and the sub-battery of the 2nd GaInP (9); The sub-battery of 2nd GaInP (9) has the 4th antireflection layer (10), the 5th antireflection layer (12) and the 6th antireflection layer (13), wherein on the 4th antireflection layer (10), is formed with top electrode (11).
2. photovoltaic cell as claimed in claim 1, is characterized in that:
Wherein, the first antireflection layer (4) is MgF
2, its refractive index is 1.36 ~ 1.40, and thickness is 40-60nm; Second antireflection layer (7) is AlGaInN film, and its refractive index is 3.2 ~ 3.4, and thickness is 30-40nm; 3rd antireflection layer (8) is ZnS film, and its refractive index is 2.1-2.3, and thickness is 50-70nm; 4th antireflection layer (10) is AlGaInN film, and its refractive index is 3.2 ~ 3.4, and thickness is 30-40nm; 5th antireflection layer (12) is Si
3n
4film, its refractive index is: 2.1-2.4, and its thickness is 50-60nm; 6th antireflection layer (13) is Ta
2o
5film, its refractive index is 2.0 ~ 2.15, and its thickness is 80-100nm.
3. photovoltaic cell as claimed in claim 1 or 2, it is characterized in that: wherein, the material of described hearth electrode and top electrode is metal material.
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| CN201310065015.1A CN103178125B (en) | 2013-02-28 | 2013-02-28 | Five-knot cascade photovoltaic cell with antireflection film |
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| CN201310065015.1A CN103178125B (en) | 2013-02-28 | 2013-02-28 | Five-knot cascade photovoltaic cell with antireflection film |
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| CN103178125B true CN103178125B (en) | 2015-07-15 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101101933A (en) * | 2007-07-13 | 2008-01-09 | 南京大学 | Setup method for indium-gallium-nitride p-n node type multi-node solar battery structure |
| CN201425943Y (en) * | 2009-02-23 | 2010-03-17 | 东南大学 | Solar cell |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004289091A (en) * | 2003-03-25 | 2004-10-14 | Canon Inc | Photoelectromotive force element |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101101933A (en) * | 2007-07-13 | 2008-01-09 | 南京大学 | Setup method for indium-gallium-nitride p-n node type multi-node solar battery structure |
| CN201425943Y (en) * | 2009-02-23 | 2010-03-17 | 东南大学 | Solar cell |
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