CN103178125A - Five-knot cascade photovoltaic cell with antireflection film - Google Patents
Five-knot cascade photovoltaic cell with antireflection film Download PDFInfo
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- CN103178125A CN103178125A CN2013100650151A CN201310065015A CN103178125A CN 103178125 A CN103178125 A CN 103178125A CN 2013100650151 A CN2013100650151 A CN 2013100650151A CN 201310065015 A CN201310065015 A CN 201310065015A CN 103178125 A CN103178125 A CN 103178125A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Abstract
The invention discloses a five-knot cascade photovoltaic cell with an antireflection film. The five-knot cascade photovoltaic cell is structurally characterized in that, a bottom electrode is disposed on the lower surface of an InP substrate, a GaAs sub-cell, a GaInAs sub-cell and a GaInP sub-cell are sequentially disposed on the upper surface of the Inp substrate, the GaInP sub-cell is provided with a strain compensation GaAsP/GaInAs superlattice sub-cell. A GaInP sub-cell is disposed on the strain compensation GaAsP/GaInAs superlattice sub-cell. A first antireflection layer is disposed between the GaInAs sub-cell and the GaInP sub-cell. A second antireflection layer and a third antireflection layer are disposed between the strain compensation GaAsP/GaInAs superlattice sub-cell and the GaInP sub-cell disposed on the strain compensation GaAsP/GaInAs superlattice sub-cell. A fourth antireflection layer, a fifth antireflection layer and a sixth antireflection layer are disposed on the GaInP sub-cell disposed on the strain compensation GaAsP/GaInAs superlattice sub-cell, and a top electrode is formed on the fourth antireflection layer.
Description
Technical field
The present invention relates to the optical semiconductor electro-technical field, particularly relate to a kind of five knot cascade photovoltaic cells with antireflective coating.
Background technology
Photovoltaic cell is to be transform light energy the opto-electronic device of electric energy, concerning photovoltaic cell, the photovoltaic cell of unijunction can only cover and utilize the sunlight of a certain wave-length coverage, in order to take full advantage of the photon energy of sunlight different-waveband, improve the photoelectric conversion efficiency of photovoltaic cell, generally with the semi-conducting material collocation of multiple different band gap, form multi-junction photovoltaic battery.
At present, in the GaInP/GaAs/Ge of Lattice Matching three junction photovoltaic batteries, the photoelectric conversion efficiency maximum can reach 32% under without the optically focused condition.In this three junction battery, the Ge battery covers wider spectrum, and its short circuit current maximum can reach 2 times of other two junction batteries, and due to the restriction that is subjected to three junction battery series connection, the energy of the solar spectrum that the Ge battery is corresponding is not by abundant conversion using.GaInP/ (In) GaAs/InGaAsN/Ge four crystal lattice match battery can obtain very high transformation efficiency in theory, but are limited by the growth difficulty that reduces InGaAsN fault in material density, and this four junction battery has very large challenge for Material growth.GaInP/ (In) GaAs/InGaAsN/GaAs/Ge five crystal lattice match battery also can obtain very high transformation efficiency in theory, but the problem and four junction photovoltaic batteries that exist at present are similar.
And photovoltaic cell carries out in the process of light conversion, the loss of reflection has reduced the number of photons of photovoltaic cell unit are incident, cause the photovoltaic cell current density to reduce, thereby affect the energy conversion efficiency of battery, for improving the photoelectric conversion efficiency of battery, should reduce the loss of battery surface reflection of light, increase optical transmission.
Summary of the invention:
For addressing the above problem, the present invention is intended to propose a kind of five junction photovoltaic battery structures with antireflective coating, and the above-mentioned antireflective coating that adopts the present invention to propose can reach good index matching, improves the efficient of photovoltaic cell.
The structure of five junction photovoltaic batteries with antireflective coating that the present invention proposes is:
Lower surface at InP substrate (1) is provided with hearth electrode (14), at the upper surface of described InP substrate (1), the sub-battery of GaAs (2) is set; Has the sub-battery of GaInAs (3) on the sub-battery of this GaAs (2); Has the sub-battery of GaInP (5) on the sub-battery of this GaInAs (3); Have the sub-batteries of strain compensation GaAsP/GaInAs superlattice (6) on the sub-battery of this GaInP (5); Upper at the sub-batteries of this strain compensation GaAsP/GaInAs superlattice (6) is the sub-battery of GaInP (9); Wherein, has the first antireflection layer (4) between the sub-battery of GaInAs (3) and the sub-battery of GaInP (5); Have the second antireflection layer (7) and the 3rd antireflection layer (8) between the sub-batteries of this strain compensation GaAsP/GaInAs superlattice (6) and the sub-battery of GaInP (9); Have the 4th antireflection layer (10), the 5th antireflection layer (12) and the 6th antireflection layer (13) on the sub-battery of GaInP (9), wherein be formed with top electrode (11) on the 4th antireflection layer (10).
Wherein, the first antireflection layer (4) is MgF
2, its refractive index is 1.36～1.40, thickness is 40-60nm; The second antireflection layer (7) is the AlGaInN film, and its refractive index is 3.2～3.4, and thickness is 30-40nm; The 3rd antireflection layer (8) is the ZnS film, and its refractive index is 2.1-2.3, and thickness is 50-70nm; The 4th antireflection layer (10) is the AlGaInN film, and its refractive index is 3.2～3.4, and thickness is 30-40nm; The 5th antireflection layer (12) is Si
3N
4Film, its refractive index is: 2.1-2.4, its thickness are 50-60nm; The 6th antireflection layer (13) is Ta
2O
5Film, its refractive index are 2.0～2.15, and its thickness is 80-100nm.
Wherein, adopt metal material to form described hearth electrode and top electrode, this metal material such as: aluminium, silver or golden etc.
Description of drawings:
Fig. 1 is the five knot cascade photovoltaic cells with antireflective coating that the present invention proposes.
Embodiment:
Below by embodiment, the five knot cascade photovoltaic cells with antireflective coating that the present invention proposes are elaborated.
Embodiment 1
As shown in Figure 1, the five knot cascade photovoltaic cells with antireflective coating that the present invention proposes have following structure:
Lower surface at InP substrate (1) is provided with hearth electrode (14), at the upper surface of described InP substrate (1), the sub-battery of GaAs (2) is set; Has the sub-battery of GaInAs (3) on the sub-battery of this GaAs (2); Has the sub-battery of GaInP (5) on the sub-battery of this GaInAs (3); Have the sub-batteries of strain compensation GaAsP/GaInAs superlattice (6) on the sub-battery of this GaInP (5); Upper at the sub-batteries of this strain compensation GaAsP/GaInAs superlattice (6) is the sub-battery of GaInP (9); Wherein, has the first antireflection layer (4) between the sub-battery of GaInAs (3) and the sub-battery of GaInP (5); Have the second antireflection layer (7) and the 3rd antireflection layer (8) between the sub-batteries of this strain compensation GaAsP/GaInAs superlattice (6) and the sub-battery of GaInP (9); Have the 4th antireflection layer (10), the 5th antireflection layer (12) and the 6th antireflection layer (13) on the sub-battery of GaInP (9), wherein be formed with top electrode (11) on the 4th antireflection layer (10).
Wherein, the first antireflection layer (4) is MgF
2, its refractive index is 1.36～1.40, thickness is 40-60nm; The second antireflection layer (7) is the AlGaInN film, and its refractive index is 3.2～3.4, and thickness is 30-40nm; The 3rd antireflection layer (8) is the ZnS film, and its refractive index is 2.1-2.3, and thickness is 50-70nm; The 4th antireflection layer (10) is the AlGaInN film, and its refractive index is 3.2～3.4, and thickness is 30-40nm; The 5th antireflection layer (12) is Si
3N
4Film, its refractive index is: 2.1-2.4, its thickness are 50-60nm; The 6th antireflection layer (13) is Ta
2O
5Film, its refractive index are 2.0～2.15, and its thickness is 80-100nm.
Wherein, adopt metal material to form described hearth electrode and top electrode, this metal material such as: aluminium, silver or golden etc.
The below introduces the preferred embodiment of five junction photovoltaic batteries with antireflective coating of the present invention's proposition, and these five junction photovoltaic batteries with antireflective coating have following structure:
Lower surface at InP substrate (1) is provided with hearth electrode (14), at the upper surface of described InP substrate (1), the sub-battery of GaAs (2) is set; Has the sub-battery of GaInAs (3) on the sub-battery of this GaAs (2); Has the sub-battery of GaInP (5) on the sub-battery of this GaInAs (3); Have the sub-batteries of strain compensation GaAsP/GaInAs superlattice (6) on the sub-battery of this GaInP (5); Upper at the sub-batteries of this strain compensation GaAsP/GaInAs superlattice (6) is the sub-battery of GaInP (9); Wherein, has the first antireflection layer (4) between the sub-battery of GaInAs (3) and the sub-battery of GaInP (5); Have the second antireflection layer (7) and the 3rd antireflection layer (8) between the sub-batteries of this strain compensation GaAsP/GaInAs superlattice (6) and the sub-battery of GaInP (9); Have the 4th antireflection layer (10), the 5th antireflection layer (12) and the 6th antireflection layer (13) on the sub-battery of GaInP (9), wherein be formed with top electrode (11) on the 4th antireflection layer (10).
Wherein, the first antireflection layer (4) is MgF
2, its refractive index is 1.38, thickness is 50nm; The second antireflection layer (7) is the AlGaInN film, and its refractive index is 3.3, and thickness is 36nm; The 3rd antireflection layer (8) is the ZnS film, and its refractive index is 2.15, and thickness is 60nm; The 4th antireflection layer (10) is the AlGaInN film, and its refractive index is 3.3, and thickness is 36nm; The 5th antireflection layer (12) is Si
3N
4Film, its refractive index is: 2.3, its thickness is 55nm; The 6th antireflection layer (13) is Ta
2O
5Film, its refractive index are 2.1, and its thickness is 90nm.
Five junction photovoltaic batteries that antireflective coating is arranged proposed by the invention absorb little in the application band scope, refractive index is complementary, and has good optical property.
Above execution mode is described in detail the present invention, but above-mentioned execution mode is not in order to limit scope of the present invention, and protection scope of the present invention is defined by the appended claims.
Claims (3)
1. five knot cascade photovoltaic cells with antireflective coating, it is characterized in that: the structure of described photovoltaic cell is:
Lower surface at InP substrate (1) is provided with hearth electrode (14), at the upper surface of described InP substrate (1), the sub-battery of GaAs (2) is set; Has the sub-battery of GaInAs (3) on the sub-battery of this GaAs (2); Has the sub-battery of GaInP (5) on the sub-battery of this GaInAs (3); Have the sub-batteries of strain compensation GaAsP/GaInAs superlattice (6) on the sub-battery of this GaInP (5); Upper at the sub-batteries of this strain compensation GaAsP/GaInAs superlattice (6) is the sub-battery of GaInP (9); Wherein, has the first antireflection layer (4) between the sub-battery of GaInAs (3) and the sub-battery of GaInP (5); Have the second antireflection layer (7) and the 3rd antireflection layer (8) between the sub-batteries of this strain compensation GaAsP/GaInAs superlattice (6) and the sub-battery of GaInP (9); Have the 4th antireflection layer (10), the 5th antireflection layer (12) and the 6th antireflection layer (13) on the sub-battery of GaInP (9), wherein be formed with top electrode (11) on the 4th antireflection layer (10).
2. photovoltaic cell as claimed in claim 1 is characterized in that:
Wherein, the first antireflection layer (4) is MgF
2, its refractive index is 1.36～1.40, thickness is 40-60nm; The second antireflection layer (7) is the AlGaInN film, and its refractive index is 3.2～3.4, and thickness is 30-40nm; The 3rd antireflection layer (8) is the ZnS film, and its refractive index is 2.1-2.3, and thickness is 50-70nm; The 4th antireflection layer (10) is the AlGaInN film, and its refractive index is 3.2～3.4, and thickness is 30-40nm; The 5th antireflection layer (12) is Si
3N
4Film, its refractive index is: 2.1-2.4, its thickness are 50-60nm; The 6th antireflection layer (13) is Ta
2O
5Film, its refractive index are 2.0～2.15, and its thickness is 80-100nm.
3. photovoltaic cell as claimed in claim 1 or 2, it is characterized in that: wherein, the material of described hearth electrode and top electrode is metal material, such as aluminium, silver or golden etc.
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| CN201310065015.1A CN103178125B (en) | 2013-02-28 | 2013-02-28 | Five-knot cascade photovoltaic cell with antireflection film |
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| CN201310065015.1A CN103178125B (en) | 2013-02-28 | 2013-02-28 | Five-knot cascade photovoltaic cell with antireflection film |
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| CN103178125A true CN103178125A (en) | 2013-06-26 |
| CN103178125B CN103178125B (en) | 2015-07-15 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004289091A (en) * | 2003-03-25 | 2004-10-14 | Canon Inc | Photoelectromotive force element |
| CN101101933A (en) * | 2007-07-13 | 2008-01-09 | 南京大学 | Setup method for indium-gallium-nitride p-n node type multi-node solar battery structure |
| CN201425943Y (en) * | 2009-02-23 | 2010-03-17 | 东南大学 | Solar cell |
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- 2013-02-28 CN CN201310065015.1A patent/CN103178125B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004289091A (en) * | 2003-03-25 | 2004-10-14 | Canon Inc | Photoelectromotive force element |
| CN101101933A (en) * | 2007-07-13 | 2008-01-09 | 南京大学 | Setup method for indium-gallium-nitride p-n node type multi-node solar battery structure |
| CN201425943Y (en) * | 2009-02-23 | 2010-03-17 | 东南大学 | Solar cell |
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| CN103178125B (en) | 2015-07-15 |
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