CN103177959A - Diode for preventing stress from being acted on chip and manufacture method thereof - Google Patents
Diode for preventing stress from being acted on chip and manufacture method thereof Download PDFInfo
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- CN103177959A CN103177959A CN2011104379278A CN201110437927A CN103177959A CN 103177959 A CN103177959 A CN 103177959A CN 2011104379278 A CN2011104379278 A CN 2011104379278A CN 201110437927 A CN201110437927 A CN 201110437927A CN 103177959 A CN103177959 A CN 103177959A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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Abstract
The invention discloses a diode for preventing stress from being acted on a chip and a manufacture method thereof. When a tube seat of the diode is manufactured, the appearance of the tube seat of the diode is manufactured to be in a shape of an embossed structure consisting of a large-diameter cylinder and a small-diameter cylinder, the small-diameter cylinder serves as an assembling connecting position when the diode is assembled, the large-diameter cylinder serves as a position bearing assembling pressure effect when the diode is assembled, a concave hole is manufactured on the large-diameter cylinder, an annular groove and a welding platform are manufactured in the concave hole of the large-diameter cylinder, the diode chip connected with a pier head lead wire is welded on the welding platform, and then silicon rubber is filled into the concave hole to manufacture the diode for preventing stress from being acted on the chip. The diode for preventing stress from being acted on the chip has the advantages of being ensured not to be damaged by external force when the diode chip is assembled, and being simple in structure and reliable in performance.
Description
Technical field
the present invention relates to a kind of effect of stress diode on chip and preparation method thereof that prevents, particularly a kind of effect of stress diode on chip of producing because of assembling pressure and preparation method thereof that prevents, belong to the diode fabrication technical field.
Background technology
on motor vehicle, usually use the silicon rectifier diode of 25～50A, the alternating current that is mainly used in motor generator is sent changes into direct current for other electrical equipment on automobile.At present, market Major Epidemic BOSCH type press-fit diode, due to its structural reason, with heat radiation pole plate combination assembling the time, if mismate, under the effect of assembling pressure, easily cause the damage to diode chip for backlight unit of the stress that produces because of assembling pressure, make diode not reach standard-required on electrical quantity, reverse leakage current increases, even can cause diode fails when serious, lose the function of " forward conduction, oppositely cut-off ".Therefore existing diode structure is still reasonable not.
Summary of the invention
the object of the invention is to, provide a kind of simple in structure and can make diode when assembling diode chip for backlight unit can not be subject to a kind of effect of stress diode on chip and preparation method thereof that prevents of the stress rupture that external force produces, to overcome the deficiencies in the prior art.
technical scheme of the present invention is achieved in that and of the present inventionly a kind ofly prevents that the diode manufacturing method of effect of stress on chip from being, when making the base of diode, the convex shape planform that the base shape fabricating of diode is become to be comprised of cylinder with large diameter and small diameter cylinders, and using small diameter cylinders as assembling assembly connection position during diode, bear the position of assembling pressure effect during using cylinder with large diameter as the assembling diode, produce a shrinkage pool on cylinder with large diameter, and produce a ring annular groove and jig in the shrinkage pool of cylinder with large diameter, the diode chip for backlight unit that is connected with the pier nose lead-in wire is welded on jig, then advance in shrinkage pool to produce to prevent the diode of effect of stress on chip with the silicon rubber embedding.
prevent that according to a kind of of said method structure the diode of effect of stress on chip from being: this diode comprises base, pier nose lead-in wire and diode chip for backlight unit are installed on base, base consists of the planform of convex shape cylinder with large diameter and small diameter cylinders, be provided with shrinkage pool on cylinder with large diameter, be provided with the jig of a circle and be provided with a ring annular groove around jig at middle part, shrinkage pool bottom surface, the diode chip for backlight unit that is connected with the pier nose lead-in wire is welded on jig, and in shrinkage pool, embedding has the silicon rubber that diode chip for backlight unit is all covered in.
the bottom surface cross sectional shape of above-mentioned annular groove is circular shape.
the outside diameter of above-mentioned cylinder with large diameter is greater than the outside diameter of small diameter cylinders.
the outside diameter of above-mentioned small diameter cylinders is less than the aperture of cylinder with large diameter upper concave hole.
be provided with on the external cylindrical surface of small diameter cylinders and can guarantee and be assembled the close-fitting straight burr of parts.
owing to having adopted technique scheme, the convex shape planform that the present invention becomes to be comprised of cylinder with large diameter and small diameter cylinders by the base shape fabricating of diode, and using small diameter cylinders as assembling assembly connection position during diode, bear the position of assembling pressure effect during using cylinder with large diameter as the assembling diode, be provided with a ring annular groove around jig simultaneously, like this when pressing solidly on produced product by diode assembling of the present invention, its assembling pressure will act on large diameter cylinder, the stress that its assembling pressure produces base inside is because the buffer action that annular groove is arranged can discharge the effect of stress to jig, so be welded on the impact that chip on jig can not be subject to the stress that assembling pressure produces, more can not be assembled the stress rupture that pressure produces.In addition, because base of the present invention has adopted the structure of convex shape, when assembling, its small diameter cylinders can be assembled and put in place under less pressure, so greatly reduced the assembling compression produced in base, made produced product function and stability better.So compared with prior art, the present invention not only has advantages of that the chip that can guarantee diode can not be subject to assembling outside destroy when assembling, but also has advantages of simple in structure, dependable performance in the present invention.
The accompanying drawing explanation
fig. 1 is structural representation of the present invention;
fig. 2 is the annular groove bottom surface cross sectional shape structure for amplifying schematic diagram of base of the present invention.
being labeled as in accompanying drawing: 1-base, 1.1-cylinder with large diameter, 1.2-small diameter cylinders, 1.3-shrinkage pool, 1.4-annular groove, 1.5-jig, 1.6-anti-slop serrations, 2-pier nose lead-in wire, 3-diode chip for backlight unit, 4-silicon rubber.
Embodiment
below in conjunction with drawings and Examples, the present invention is further illustrated, but not as the foundation to the present invention's restriction.
embodiments of the invention: a kind of diode manufacturing method of effect of stress on chip that prevent of the present invention, to improve and form on the manufacture method of existing diode, when making the base of diode, the convex shape planform that the base of diode 1 shape fabricating is become to be comprised of cylinder with large diameter 1.1 and small diameter cylinders 1.2, and using small diameter cylinders 1.2 as assembling assembly connection position during diode, bear the position of assembling pressure effect during using cylinder with large diameter 1.1 as the assembling diode, produce a shrinkage pool 1.3 on cylinder with large diameter 1.1, and produce a ring annular groove 1.4 and jig 1.5 in the shrinkage pool 1.3 of cylinder with large diameter 1.1, adopt traditional welding procedure to be welded on jig 1.5 the existing diode chip for backlight unit 3 that is connected with pier nose lead-in wire 2, then with traditional silicon rubber embedding, advance in shrinkage pool 1.3, diode chip for backlight unit 3 is all covered in, can produce and prevent the diode of effect of stress on chip.
the of the present invention a kind of structure that prevents the diode of effect of stress on chip built according to said method as depicted in figs. 1 and 2, this diode comprises base 1 and the existing diode chip for backlight unit 3 that is connected with pier nose lead-in wire 2, its base 1 consists of the planform of convex shape cylinder with large diameter 1.1 and small diameter cylinders 1.2, be manufactured with the shrinkage pool 1.3 of blind hole shape on cylinder with large diameter 1.1, produce jig 1.5 and the annular groove around jig 1.5 1.4 of a circle at shrinkage pool 1.3 middle parts, bottom surface, during making, the outside diameter of cylinder with large diameter 1.1 is made into to the outside diameter that is greater than small diameter cylinders 1.2, preferably the outside diameter of small diameter cylinders 1.2 is made into to the aperture of the shrinkage pool 1.3 be less than on cylinder with large diameter 1.1 and is more than or equal to the diameter of jig 1.5, the cross sectional shape of annular groove 1.4 bottom surfaces is made into to circular shape (as shown in Figure 2) simultaneously, for when assembling is used, connect more reliable, can on the external cylindrical surface of small diameter cylinders 1.2, produce and can guarantee and be assembled the close-fitting straight burr 1.6 of parts, then the diode chip for backlight unit 3 that adopts traditional mode will be connected with pier nose lead-in wire 2 is welded on jig 1.5, and the silicon rubber 4 that embedding completely can all cover in diode chip for backlight unit 3 in shrinkage pool 1.3.
Claims (6)
1. one kind prevents the diode manufacturing method of effect of stress on chip, it is characterized in that: when making the base of diode, the convex shape planform that the base of diode (1) shape fabricating is become to be comprised of cylinder with large diameter (1.1) and small diameter cylinders (1.2), and using small diameter cylinders (1.2) as assembling assembly connection position during diode, bear the position of assembling pressure effect during using cylinder with large diameter (1.1) as the assembling diode, produce a shrinkage pool (1.3) on cylinder with large diameter (1.1), and produce a ring annular groove (1.4) and jig (1.5) in the shrinkage pool (1.3) of cylinder with large diameter (1.1), the diode chip for backlight unit (3) that will be connected with pier nose lead-in wire (2) is welded on jig (1.5), then advance in shrinkage pool (1.3) to produce with the silicon rubber embedding and prevent the diode of effect of stress on chip.
2. one kind prevents the diode of effect of stress on chip, comprise base (1), pier nose lead-in wire (2) and diode chip for backlight unit (3) are installed on base (1), it is characterized in that: base (1) consists of the planform of convex shape cylinder with large diameter (1.1) and small diameter cylinders (1.2), be provided with shrinkage pool (1.3) on cylinder with large diameter (1.1), be provided with the jig (1.5) of a circle and be provided with the stress of a ring annular groove (1.4) while closely cooperating with alleviation around jig (1.5) at middle part, shrinkage pool (1.3) bottom surface, the diode chip for backlight unit (3) that is connected with pier nose lead-in wire (2) is welded on jig (1.5), in shrinkage pool (1.3), embedding has the silicon rubber (4) that diode chip for backlight unit (3) is all covered in.
3. the diode of effect of stress on chip that prevent according to claim 2, it is characterized in that: the cross sectional shape of annular groove (1.4) bottom surface is circular shape.
4. the diode of effect of stress on chip that prevent according to claim 2, it is characterized in that: the outside diameter of cylinder with large diameter (1.1) is greater than the outside diameter of small diameter cylinders (1.2).
5. the diode of effect of stress on chip that prevent according to claim 2, it is characterized in that: the outside diameter of small diameter cylinders (1.2) is less than the aperture of cylinder with large diameter (1.1) upper concave hole (1.3).
6. the diode of effect of stress on chip that prevent according to claim 2, is characterized in that: be provided with straight burr (1.6) on the external cylindrical surface of small diameter cylinders (1.2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011104379278A CN103177959A (en) | 2011-12-23 | 2011-12-23 | Diode for preventing stress from being acted on chip and manufacture method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011104379278A CN103177959A (en) | 2011-12-23 | 2011-12-23 | Diode for preventing stress from being acted on chip and manufacture method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103177959A true CN103177959A (en) | 2013-06-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011104379278A Pending CN103177959A (en) | 2011-12-23 | 2011-12-23 | Diode for preventing stress from being acted on chip and manufacture method thereof |
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| Country | Link |
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| CN (1) | CN103177959A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4532539A (en) * | 1981-08-29 | 1985-07-30 | Robert Bosch Gmbh | Solid-state diode-rectifier and heat sink structure |
| CN101752995A (en) * | 2008-12-17 | 2010-06-23 | 王满枝 | Heat dissipation shell for automobile rectifier diodes |
| CN201681943U (en) * | 2010-02-24 | 2010-12-22 | 徐州翔跃电子有限公司 | Automobile rectifying bridge diode |
| CN102263186A (en) * | 2010-05-28 | 2011-11-30 | 贵州雅光电子科技股份有限公司 | High reliable light-emitting diode and manufacturing method thereof |
| CN202373589U (en) * | 2011-12-23 | 2012-08-08 | 贵州雅光电子科技股份有限公司 | Diode capable of preventing stress from acting on chip |
-
2011
- 2011-12-23 CN CN2011104379278A patent/CN103177959A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4532539A (en) * | 1981-08-29 | 1985-07-30 | Robert Bosch Gmbh | Solid-state diode-rectifier and heat sink structure |
| CN101752995A (en) * | 2008-12-17 | 2010-06-23 | 王满枝 | Heat dissipation shell for automobile rectifier diodes |
| CN201681943U (en) * | 2010-02-24 | 2010-12-22 | 徐州翔跃电子有限公司 | Automobile rectifying bridge diode |
| CN102263186A (en) * | 2010-05-28 | 2011-11-30 | 贵州雅光电子科技股份有限公司 | High reliable light-emitting diode and manufacturing method thereof |
| CN202373589U (en) * | 2011-12-23 | 2012-08-08 | 贵州雅光电子科技股份有限公司 | Diode capable of preventing stress from acting on chip |
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Application publication date: 20130626 |