CN103165680B - A kind of substrate for display and display unit - Google Patents
A kind of substrate for display and display unit Download PDFInfo
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- CN103165680B CN103165680B CN201310072120.8A CN201310072120A CN103165680B CN 103165680 B CN103165680 B CN 103165680B CN 201310072120 A CN201310072120 A CN 201310072120A CN 103165680 B CN103165680 B CN 103165680B
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- 239000000758 substrate Substances 0.000 title claims abstract description 55
- 239000012528 membrane Substances 0.000 claims abstract description 71
- 238000002161 passivation Methods 0.000 claims abstract description 33
- 238000009413 insulation Methods 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 abstract description 45
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 239000010408 film Substances 0.000 description 65
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 44
- 239000007789 gas Substances 0.000 description 32
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 27
- 229910052581 Si3N4 Inorganic materials 0.000 description 25
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 22
- 229910021529 ammonia Inorganic materials 0.000 description 22
- 229910000077 silane Inorganic materials 0.000 description 22
- 238000000151 deposition Methods 0.000 description 18
- 230000008021 deposition Effects 0.000 description 18
- 239000000463 material Substances 0.000 description 12
- 230000000630 rising effect Effects 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000000059 patterning Methods 0.000 description 6
- 229910004205 SiNX Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 229910052729 chemical element Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- -1 and wherein Chemical compound 0.000 description 1
- FANANXQSVYPRCQ-UHFFFAOYSA-N azane;silicon Chemical compound N.[Si] FANANXQSVYPRCQ-UHFFFAOYSA-N 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000012163 sequencing technique Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133502—Antiglare, refractive index matching layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
Abstract
The invention provides a kind of substrate for display and display unit, relate to Display Technique field, solve the problem that existing transparent membrane transmitance is low.A kind of substrate for display, comprising: substrate and the multiple dot structures arranged on the substrate; Described dot structure is divided into transparent area and alternatively non-transparent district, and the part being positioned at described transparent area in described dot structure comprises multiple transparent membrane, and in described multiple transparent membrane, the refractive index of at least three adjacent transparent membranes changes successively according to putting in order; Described substrate is disposed with gate insulation layer, passivation layer and pixel electrode, in described multiple transparent membrane, the refractive index of at least three adjacent transparent membranes is specially according to the change successively that puts in order: the refractive index of described gate insulation layer, passivation layer and pixel electrode changes successively.The present invention is applicable to the manufacture field of display unit.
Description
Technical field
The present invention relates to Display Technique field, particularly relate to a kind of transparent membrane and preparation method thereof, substrate for display and display unit.
Background technology
Display, as show tools, plays more and more important role in daily life.And along with the continuous renewal of technology, the requirement of people to display is also more and more higher.Such as people require that it has high brightness, wide viewing angle, high-resolution etc.
Wherein, in prior art, a kind of method improving display brightness is improve the utilization ratio of light.Existing display, comprise array base palte, as shown in Figure 1 and Figure 2, described array base palte comprises substrate 1 and is arranged on grid line 2, data wire 4 and the public electrode wire 6 on described substrate 1, wherein, the region that grid line 2 and data wire 4 surround is called pixel region, is provided with device such as thin-film transistor 3 grade in pixel region, and the region of pixel region except device such as thin-film transistor 3 grade is viewing area.As shown in Figure 2, light will successively through substrate 1 and the gate insulation layer 7, passivation layer 8 and the pixel electrode layer 5 that are arranged on above substrate 1 through viewing area.And the utilization ratio wanting to improve light will improve the transmitance of substrate, gate insulation layer, passivation layer and pixel electrode layer etc., to reduce the loss of light.
Summary of the invention
Embodiments of the invention provide a kind of transparent membrane and preparation method thereof, substrate for display and display unit, described transparent membrane comprises at least three sublayers, and the refractive index of described at least three sublayers changes successively according to putting in order, make the transmitance of described transparent membrane higher.
For achieving the above object, embodiments of the invention adopt following technical scheme:
Embodiments provide a kind of transparent membrane, comprise at least three stacked sublayers, the refractive index of described at least three sublayers is different, and the refractive index of any one sublayer between the bottom and most top layer is between the refractive index of two sublayers be adjacent.
Optionally, the material forming described transparent membrane is silicon nitride.
Embodiments provide a kind of manufacture method of transparent membrane, comprising:
Initial process conditions is set, forms the initial sub-layer of described transparent membrane;
According to the change of each process conditions on the impact of described refractive index of transparent films with double-prisms size, regulate at least one process conditions described, formed with described initial sub-layer be benchmark, at least two follow-up sublayers changing successively according to putting in order of refractive index.
Optionally, the described initial process conditions that arranges comprises: arrange initial generation temperature, generate pressure, power and gas flow.
Optionally, the described change according to each process conditions is on the impact of described refractive index of transparent films with double-prisms size, regulate at least one process conditions described, formed with described initial sub-layer be benchmark, at least two follow-up sublayers changing successively according to putting in order of refractive index comprise:
Adopt to raise and generate temperature, reduction generation pressure and reduce at least one regulative mode in power, form the second sublayer;
One or many adopts to raise and generates temperature, reduction generation pressure and reduce at least one regulative mode in power, forms one or more follow-up sublayer;
Or,
Adopt to reduce and generate at least one regulative mode in temperature, rising generation pressure and increased wattage, form the second sublayer;
One or many adopts to reduce and generates at least one regulative mode in temperature, rising generation pressure and increased wattage, forms one or more follow-up sublayer.
Optionally, the described change according to each process conditions is on the impact of described refractive index of transparent films with double-prisms size, regulate at least one process conditions described, formed with described initial sub-layer be benchmark, at least two follow-up sublayers changing successively according to putting in order of refractive index comprise:
Adopt to raise and generate temperature, reduce generation pressure, reduce power and reduce silane relative at least one regulative mode in the gas flow of ammonia, form the second sublayer;
One or many adopts to raise and generates temperature, reduces generation pressure, reduces power and reduce silane relative at least one regulative mode in the gas flow of ammonia, forms one or more follow-up sublayer;
Or,
Adopt to reduce and generate temperature, rising generation pressure, increased wattage and raise silane relative at least one regulative mode in the gas flow of ammonia, form the second sublayer;
One or many adopts to reduce and generates temperature, rising generation pressure, increased wattage and raise silane relative at least one regulative mode in the gas flow of ammonia, forms one or more follow-up sublayer.
Embodiments provide a kind of substrate for display, comprising: substrate and the multiple dot structures arranged on the substrate; Described dot structure is divided into transparent area and alternatively non-transparent district, and the part being positioned at described transparent area in described dot structure comprises multiple transparent membranes, wherein, and arbitrary described film that at least one transparent membrane described provides for the embodiment of the present invention.
Optionally, described substrate for display is array base palte, and a described transparent membrane in each dot structure is the part of gate insulation layer, or is the part of passivation layer.
The invention provides a kind of substrate for display, comprising: substrate and the multiple dot structures arranged on the substrate; Described dot structure is divided into transparent area and alternatively non-transparent district, and the part being positioned at described transparent area in described dot structure comprises multiple transparent membrane, and in described multiple transparent membrane, the refractive index of at least three adjacent transparent membranes changes successively according to putting in order.
The invention provides a kind of display unit, comprise arbitrary described substrate for display that the embodiment of the present invention provides.
A kind of transparent membrane that the embodiment of the present invention provides and preparation method thereof, substrate for display and display unit, relatively comprise the existing transparent membrane of two sublayers, described transparent membrane comprises at least three sublayers, the refractive index of described at least three sublayers is different, and the refractive index of described at least three sublayers changes successively according to putting in order, the refractive index of any one sublayer namely between the bottom and most top layer, between the refractive index of two sublayers be adjacent, makes the transmitance of described transparent membrane higher.
Accompanying drawing explanation
Fig. 1 is a kind of array base palte fragmentary top TV structure schematic diagram of the prior art;
The sectional structure schematic diagram that Fig. 2 is array base palte shown in Fig. 1;
A kind of transparent membrane that Fig. 3 provides for the embodiment of the present invention;
The sectional structure schematic diagram of a kind of array base palte that Fig. 4 provides for the embodiment of the present invention;
A kind of method schematic diagram making transparent membrane that Fig. 5 provides for the embodiment of the present invention;
A kind of manufacture method schematic diagram making grid insulating film that Fig. 6 provides for the embodiment of the present invention;
Reference numeral:
1-substrate; 2-grid line; 3-thin-film transistor; 4-data wire; 5-pixel electrode layer; 6-public electrode wire; 7-gate insulation layer; 8-passivation layer; 10-transparent membrane; 101-first sublayer; 102-second sublayer; 103-the 3rd sublayer.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.
It should be noted that, when medium incident to the refractive index that light is n1 from refractive index is the medium of n2, can there is reflection and the refraction of light in it simultaneously in interface, and then form the loss of light.According to optics fundamental theorem Fresnel equation, the pass of the refractive index of its reflectivity R and transmitance T and medium is:
Now suppose n1=2, n2=1, namely light injects refractive index from the medium that refractive index is 2 is the medium of 1, can draw R=11.1% as calculated, T=88.9%, and wherein reflectivity and refractive index are the approximation after calculating.
Between the medium of to be n1 and refractive index in refractive index be n2, add the medium that refractive index is n3, wherein, n3 is between n1 and n2.Such as, n3=1.5, can draw R=5.9%, T=94.1% as calculated, and namely its transmitance improves 5.2%.
Between the medium of to be n1 and refractive index in refractive index be n3, add the medium that refractive index is n4, between the medium of refractive index to be n2 and refractive index be n3, add the medium that refractive index is n5, wherein, n4 is between n1 and n3, and n5 is between n2 and n3.Such as, n4=1.75, n5=1.25, can draw R=3.0%, T=97.0% as calculated, and namely its transmitance improves 8.1%.
Can reach a conclusion thus, when light is through the medium of different refractivity, due to reflection and refraction, have the loss of light, but by adding the medium of refractive index between two media between the medium of different refractivity, the transmitance of light can be improved, and then improve the utilance of light.
Based on theory above, the invention provides a kind of transparent membrane, as shown in Figure 3, comprise at least three stacked sublayers, the refractive index of described at least three sublayers is different, and the refractive index of any one sublayer between the bottom and most top layer is between the refractive index of two sublayers be adjacent.
Wherein, described transparent membrane can be gate insulation layer in display unit on array base palte or passivation layer.And it should be noted that, in prior art, each Rotating fields of field of display devices is formed by vapour deposition process deposition mostly, such as passivation layer, gate insulation layer etc. can be formed by PECVD (PlasmaEnhancedChemicalVaporDeposition, plasma gas phase deposition).Plasma gas phase deposition is a kind of gas ionization making containing film composed atom by microwave or radio frequency etc., is being partially formed plasma, and plasma chemistry activity is very strong, is easy to react, and then goes out desired film at deposition on substrate.In the embodiment of the present invention, " film " refers to the thin film that methods such as utilizing deposition is produced.If be somebody's turn to do " film " without the need to patterning processes in the middle of whole manufacturing process, then should " film " can also be called " layer ", such as gate insulation layer; If " film " also patterning processes should be needed in the middle of whole manufacturing process, be then called before patterning processes " film ", be called after patterning processes " layer ".At least one film " pattern " is comprised in " layer " after patterning processes.Such as passivation layer forms thin film by deposition, then form via hole etc. on the membrane through patterning processes.
In prior art, gate insulation layer is deposited by PECVD, and the material forming gate insulation layer preferably adopts SiNx (silicon nitride), and can certainly be other materials, such as, can also be SiO
2(silicon dioxide) etc.The embodiment of the present invention is only silicon nitride with gate insulation layer for example is described in detail.Grid insulating film is by respectively by silane and ammonia ionization in the process of deposition, forms plasma, forms silicon nitride form grid insulating film by reaction on substrate.Grid insulating film is the phase before deposition, and deposition radio-frequency power is comparatively large, and the speed of deposition is very fast, can improve production capacity like this, but the SiNx of deposition is loosely organized, and Si/N is higher than relatively, and the refractive index of the grid insulating film of formation is larger.In the deposition later stage, in order to make the source electrode on active layer and drain Continuity signal without interruption, can reduce deposition rate, the SiNx compact structure of deposition, and Si/N is than relatively low, the refractive index of the grid insulating film of formation is less.Namely described gate insulation layer includes two different sublayers of refractive index.
Film provided by the invention can be described grid insulating film, and relative to comprising the existing grid insulating film of two sublayers, the transmitance comprising the grid insulating film of at least three sublayers improves, and then improve the utilance of light, be applied to display floater, the brightness of display floater can be improved.As shown in Figure 3, comprise three sublayers for gate insulation layer 10, described three sublayers are respectively the first sublayer 102, sublayer 101, second and the 3rd sublayer 103.Wherein, the transmitance of the second sublayer 102 is between the first sublayer 101 and the transmitance of the 3rd sublayer 103.Like this by arranging the second sublayer between the first sublayer and the 3rd sublayer, improve the transmitance of gate insulation layer, being applied to display floater, the brightness of display floater can be improved.
Passivation layer is similar to gate insulation layer, and the material forming passivation layer can be also silicon nitride, and in prior art, passivation film is also include the different sublayer of two refractive indexes.Concrete, in the early stage of passivation film deposition, in order to guard signal line is not corroded, the SiNx compact structure of deposition, the refractive index of the passivation film of formation is less.In the later stage of passivation film deposition, for the ease of the control of the slope angle of via hole, the SiNx of deposition is loosely organized, and the refractive index of the passivation film of formation is larger.
Film provided by the invention can be described passivation film, and relative to comprising the existing passivation film of two sublayers, the transmitance comprising the passivation film of at least three sublayers improves, and then improve the utilance of light, be applied to display floater, the brightness of display floater can be improved.
Certainly, the film that the embodiment of the present invention provides also not only is confined to grid insulating film and passivation film, also can be other films in display field or the film of other field.Can also be such as the public electrode film etc. on pixel electrode film or color membrane substrates, the embodiment of the present invention be only described in detail for grid insulating film and passivation film.
The invention provides a kind of manufacture method of transparent membrane, can be used for the transparent membrane that the making embodiment of the present invention provides, as shown in Figure 5, comprising:
Step S101, initial process conditions is set, forms the initial sub-layer of described transparent membrane.
Wherein, the process conditions forming described transparent membrane are had nothing in common with each other according to the film of different materials and different formation methods.The embodiment of the present invention only forms silicon nitride film for PECVD and is described in detail.Concrete, form silicon nitride film for PECVD, described process conditions comprise: generate temperature, generate pressure, power and gas flow.Then the described initial process conditions that arranges comprises: arrange initial generation temperature, generate pressure, power and gas flow.
Wherein, described gas flow impact forms the mass ratio of each chemical element of the material of described transparent membrane, and the amount generating gas is different, and the content forming each chemical element in the material of described transparent membrane is also different.And for different material, its gas generated is also different.Such as deposited silicon nitride sees silane and ammonia ionization respectively, forms plasma, form silicon nitride form silicon nitride film by reaction on substrate.Then described generation gas is silane and ammonia, and wherein, silane provides element silicon, and ammonia provides nitrogen element.The Si/N (silicon nitrogen ratio) of silicon nitride film can be controlled to be formed by controlling gas flow.
Step S102, according to the change of each process conditions on the impact of described refractive index of transparent films with double-prisms size, regulate at least one process conditions described, formed with described initial sub-layer be benchmark, at least two follow-up sublayers changing successively according to putting in order of refractive index.
Wherein, the impact of process conditions on the transmitance size of the film of different materials is also different, and this makes a concrete analysis of according to the concrete condition of film with regard to needing.The embodiment of the present invention is described for the size impact of above-mentioned process conditions on the refractive index of silicon nitride film.
Concrete, described generation temperature and described silicon nitride refractive index of transparent films with double-prisms are inversely proportional to, and namely generate temperature higher, then the refractive index of described silicon nitride transparent membrane is less, otherwise generate temperature lower, then the refractive index of described silicon nitride transparent membrane is larger; Described generation pressure is directly proportional to described silicon nitride refractive index of transparent films with double-prisms, and namely generate pressure larger, then the refractive index of described silicon nitride transparent membrane is larger, otherwise generate pressure less, then the refractive index of described silicon nitride transparent membrane is less; Described power is directly proportional to described silicon nitride refractive index of transparent films with double-prisms, and namely power is larger, then the refractive index of described silicon nitride transparent membrane is larger, otherwise power is less, then the refractive index of described silicon nitride transparent membrane is less.
At least one process conditions described in described adjustment, formed with described initial sub-layer be benchmark, at least two follow-up sublayers changing successively according to putting in order of refractive index.Can be with described initial sub-layer for benchmark, the refractive index of at least two follow-up sublayers increases successively according to putting in order; Also can be with described initial sub-layer for benchmark, the refractive index of at least two follow-up sublayers reduces successively according to putting in order.
Concrete, the described change according to each process conditions is on the impact of described refractive index of transparent films with double-prisms size, regulate at least one process conditions described, formed with described initial sub-layer be benchmark, at least two follow-up sublayers reducing successively according to putting in order of refractive index comprise:
Adopt to raise and generate temperature, reduction generation pressure and reduce at least one regulative mode in power, form the second sublayer;
One or many adopts to raise and generates temperature, reduction generation pressure and reduce at least one regulative mode in power, forms one or more follow-up sublayer.
Or, according to the change of each process conditions on the impact of described refractive index of transparent films with double-prisms size, regulate at least one process conditions described, formed with described initial sub-layer be benchmark, at least two follow-up sublayers increasing successively according to putting in order of refractive index comprise:
Adopt to reduce and generate at least one regulative mode in temperature, rising generation pressure and increased wattage, form the second sublayer;
One or many adopts to reduce and generates at least one regulative mode in temperature, rising generation pressure and increased wattage, forms one or more follow-up sublayer.
Identical material, controls gas flow and makes the content of each chemical element in the material of the described transparent membrane of generation different, the impact of its refractive index also not phase.And the content of each chemical element is not identical on the impact of its refractive index yet in the transparent membrane of different material formation.Only for silicon nitride in the embodiment of the present invention.By controlling to generate the silane of silicon nitride and the gas flow of ammonia, different silicon ammonia ratios can be obtained, and described silicon nitride refractive index of transparent films with double-prisms is directly proportional to Si/N.Namely Si/N is larger, and the refractive index of silicon nitride transparent membrane is larger; Si/N is less, and the refractive index of silicon nitride transparent membrane is less.
Concrete, silicon nitride transparent membrane is formed for by silane and ammonia, the described change according to each process conditions is on the impact of described refractive index of transparent films with double-prisms size, regulate at least one process conditions described, formed with described initial sub-layer be benchmark, at least two follow-up sublayers reducing successively according to putting in order of refractive index comprise:
Adopt to raise and generate temperature, reduce generation pressure, reduce power and reduce silane relative at least one regulative mode in the gas flow of ammonia, form the second sublayer;
One or many adopts to raise and generates temperature, reduces generation pressure, reduces power and reduce silane relative at least one regulative mode in the gas flow of ammonia, forms one or more follow-up sublayer.
Wherein, the gas flow that described reduction silane can be reduction silane relative to the gas flow of ammonia also can be the gas flow increasing ammonia, as long as reduce Si/N ratio.
Or, the described change according to each process conditions is on the impact of described refractive index of transparent films with double-prisms size, regulate at least one process conditions described, formed with described initial sub-layer be benchmark, at least two follow-up sublayers increasing successively according to putting in order of refractive index comprise:
Adopt to reduce and generate temperature, rising generation pressure, increased wattage and raise silane relative at least one regulative mode in the gas flow of ammonia, form the second sublayer;
One or many adopts to reduce and generates temperature, rising generation pressure, increased wattage and raise silane relative at least one regulative mode in the gas flow of ammonia, forms one or more follow-up sublayer.
Wherein, the gas flow that described rising silane can be increase silane relative to the gas flow of ammonia also can be the gas flow reducing ammonia, as long as increase Si/N ratio.
Concrete, for the gate insulation layer on substrate, because in existing technique, two sublayer refractive indexes from bottom to up reduce successively, then, when gate insulation layer comprises multiple sublayer, the refractive index of each sublayer reduces from bottom to up successively.For the passivation layer on substrate, because in existing technique, the refractive index of two sublayers increases from bottom to up successively, then when passivation layer comprises multiple sublayer, the refractive index of each sublayer increases from bottom to up successively.Described " on ", D score is as the criterion with the sequencing making sublayer, the sublayer such as formed at first be under sublayer, the sublayer formed below is in upper sublayer.
Concrete, as shown in Figure 6, make grid insulating film and comprise:
Step S201, arrange initial generation temperature, generate pressure, power and gas flow, form the initial sub-layer of described grid insulating film.
Step S202, employing raise and generate temperature, reduction generation pressure, reduction power and reduce silane relative at least one regulative mode in the gas flow of ammonia, form the second sublayer.
The basis of initial process conditions raises and generates temperature, reduce generation pressure, reduce power and reduce the gas flow of silane relative to ammonia, it can be the one regulated wherein, also can regulate various ways simultaneously, make the refractive index of the second sublayer of formation be greater than the refractive index of the first sublayer.
Step S203, employing raise and generate temperature, reduction generation pressure, reduction power and reduce silane relative at least one regulative mode in the gas flow of ammonia, form the 3rd sublayer.
Same, on the basis of the process conditions of step S202, raise and generate temperature, reduce generation pressure, reduce power and reduce the gas flow of silane relative to ammonia, can down to the one regulated wherein, also can regulate various ways simultaneously, make the refractive index of the 3rd sublayer of formation be greater than the refractive index of the second sublayer.
So by that analogy, can also form follow-up sublayer, then the grid insulating film formed comprises at least three sublayers, and the refractive index of each sublayer increases successively, and relative to existing grid insulating film, its transmitance is higher.
The embodiment of the present invention is only described in detail to make grid insulating film, and making other transparent membranes with reference to above-mentioned steps, here just can not repeat.
The invention provides a kind of substrate for display, comprising: substrate and the multiple dot structures arranged on the substrate; Described dot structure is divided into transparent area and alternatively non-transparent district, and the part being positioned at described transparent area in described dot structure comprises multiple transparent membrane, wherein, and the film that transparent membrane described at least one provides for the embodiment of the present invention.
It should be noted that, part is positioned at the transparent membrane of described transparent area, and it also can extend to alternatively non-transparent district, and namely described transparent membrane is positioned on described substrate, covers transparent area and alternatively non-transparent district.Described substrate for display goes for liquid crystal indicator, also goes for organic LED display device.
Optionally, described substrate for display is array base palte, and a described transparent membrane in each dot structure is the part of gate insulation layer, or is the part of passivation layer.As shown in Figure 4, the gate insulation layer 7 on described array base palte and passivation layer 8 include at least three sublayers.Certainly, described transparent membrane can also be the pixel electrode layer on array base palte.And described substrate for display can also be color membrane substrates, then described transparent membrane is that common electrode layer etc. on color membrane substrates is positioned at transparent area, and light is through each film that can produce light loss.
Embodiments provide a kind of substrate for display, comprising: substrate and the multiple dot structures arranged on the substrate; Described dot structure is divided into transparent area and alternatively non-transparent district, and the part being positioned at described transparent area in described dot structure comprises multiple transparent membrane, and in described multiple transparent membrane, the refractive index of at least three adjacent transparent membranes changes successively according to putting in order.
Concrete, refractive index can be reduce successively according to putting in order also can be increase successively according to putting in order according to the change successively that puts in order.In the embodiment of the present invention, described substrate also can be a kind of transparent membrane.Then as shown in Figure 4, described array base palte is disposed with gate insulation layer 7, passivation layer 8 and pixel electrode 5 on substrate 1, and gate insulation layer 7 described in each dot structure is arranged between described passivation layer 8 and substrate 1.The refractive index of described at least three adjacent transparent membranes changes successively according to putting in order, can be the refractive index of described gate insulation layer between the refractive index and the refractive index of described passivation layer of described substrate, namely the refractive index of substrate, gate insulation layer and passivation layer changes successively.The transmitance of array base palte light can be improved, when identical intensity of illumination, improve the brightness of display floater.The refractive index of described at least three adjacent transparent membranes changes successively according to the refractive index that the change successively that puts in order can also be gate insulation layer, passivation layer and the pixel electrode be disposed adjacent.Certainly, also can be that the refractive index from lowermost layer to each film of most top layer changes successively, namely can also be that the refractive index of substrate, gate insulation layer, passivation layer and pixel electrode changes successively.
It should be noted that, part is positioned at the transparent membrane of described transparent area, and it also can extend to alternatively non-transparent district, and namely described transparent membrane is positioned on described substrate, covers transparent area and alternatively non-transparent district.Described substrate for display goes for liquid crystal indicator, also goes for organic LED display device.
The invention provides a kind of display unit, comprise the described array base palte that the embodiment of the present invention provides.Display devices such as described display unit can be liquid crystal display, Electronic Paper, OLED (OrganicLight-EmittingDiode, Organic Light Emitting Diode) display and comprise any product or parts with Presentation Function such as TV, digital camera, mobile phone, panel computer of these display devices.
The above; be only the specific embodiment of the present invention, but protection scope of the present invention is not limited thereto, is anyly familiar with those skilled in the art in the technical scope that the present invention discloses; the change that can expect easily or replacement, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range of described claim.
Claims (2)
1. a substrate for display, comprising: substrate and the multiple dot structures arranged on the substrate; Described dot structure is divided into transparent area and alternatively non-transparent district, and the part being positioned at described transparent area in described dot structure comprises multiple transparent membrane, it is characterized in that, in described multiple transparent membrane, the refractive index of at least three adjacent transparent membranes changes successively according to putting in order;
Described substrate is disposed with gate insulation layer, passivation layer and pixel electrode, in described multiple transparent membrane, the refractive index of at least three adjacent transparent membranes is specially according to the change successively that puts in order: the refractive index of described gate insulation layer, passivation layer and pixel electrode changes successively.
2. a display unit, is characterized in that, comprises substrate for display according to claim 1.
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| CN201310072120.8A CN103165680B (en) | 2013-03-07 | 2013-03-07 | A kind of substrate for display and display unit |
| PCT/CN2013/077045 WO2014134883A1 (en) | 2013-03-07 | 2013-06-09 | Transparent film and preparation method thereof, display substrate and display device |
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| CN201310072120.8A CN103165680B (en) | 2013-03-07 | 2013-03-07 | A kind of substrate for display and display unit |
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| CN103165680B true CN103165680B (en) | 2016-04-20 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107085337A (en) * | 2017-06-14 | 2017-08-22 | 厦门天马微电子有限公司 | Array base palte, display panel and display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105224120B (en) * | 2014-07-03 | 2018-07-31 | 宸鸿科技(厦门)有限公司 | Board structure |
| CN106898655B (en) * | 2017-03-22 | 2019-09-03 | 上海天马微电子有限公司 | Thin film transistor (TFT), array substrate and display panel |
| CN107134482A (en) | 2017-05-09 | 2017-09-05 | 京东方科技集团股份有限公司 | A kind of thin film transistor (TFT) and preparation method thereof, display panel, display device |
| CN107591411A (en) * | 2017-07-06 | 2018-01-16 | 惠科股份有限公司 | A kind of display panel and display device |
| CN107565055B (en) * | 2017-08-29 | 2019-06-25 | 上海天马有机发光显示技术有限公司 | Organic light emitting display panel and organic light-emitting display device |
| CN109545690A (en) * | 2018-12-03 | 2019-03-29 | 惠科股份有限公司 | Thin-film transistor structure and preparation method thereof, display device |
| CN111293232B (en) | 2020-02-24 | 2021-06-25 | 武汉华星光电半导体显示技术有限公司 | Flexible display panel |
| CN111710797A (en) * | 2020-06-22 | 2020-09-25 | 云谷（固安）科技有限公司 | Display panel and display device |
| CN114047649B (en) * | 2021-11-15 | 2022-10-04 | 武汉华星光电技术有限公司 | Liquid crystal display panel and on-vehicle liquid crystal display device |
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| JPH11243204A (en) * | 1998-02-25 | 1999-09-07 | Matsushita Electric Ind Co Ltd | Active matrix substrate and liquid crystal display device thereof |
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| CN1091551A (en) * | 1992-12-29 | 1994-08-31 | 株式会社金星社 | Make the method for thin-film transistor |
| CN102738081A (en) * | 2012-07-23 | 2012-10-17 | 信利半导体有限公司 | Method for preparing ARRAY plate of thin film transistor (TFT) liquid crystal display |
| CN102903764A (en) * | 2012-09-27 | 2013-01-30 | 东方电气集团(宜兴)迈吉太阳能科技有限公司 | Three-layered silicon nitride antireflective film of crystalline silicon solar cell and preparation method thereof |
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| CN107085337B (en) * | 2017-06-14 | 2020-07-10 | 厦门天马微电子有限公司 | Array substrate, display panel and display device |
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| WO2014134883A1 (en) | 2014-09-12 |
| CN103165680A (en) | 2013-06-19 |
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