CN103165439A - Blocking layer in contact hole and manufacturing method for blocking layer - Google Patents
Blocking layer in contact hole and manufacturing method for blocking layer Download PDFInfo
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- CN103165439A CN103165439A CN2013100851080A CN201310085108A CN103165439A CN 103165439 A CN103165439 A CN 103165439A CN 2013100851080 A CN2013100851080 A CN 2013100851080A CN 201310085108 A CN201310085108 A CN 201310085108A CN 103165439 A CN103165439 A CN 103165439A
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Abstract
The invention provides a blocking layer in a contact hole and a manufacturing method for the blocking layer. The manufacturing method for the blocking layer in the contact hole comprises the following steps of: providing a semiconductor substrate, wherein the semiconductor substrate is provided with an opening; forming a Ti layer in the opening; bombarding the Ti layer by using plasma to form a first TiN layer; and forming a second TiN layer on the first TiN layer. According to the blocking layer in the contact hole and the manufacturing method for the blocking layer, after the Ti layer is formed, the Ti layer is bombarded through the plasma to form the first TiN layer, so that a layer of TiN film tightly covers the surface of the Ti layer, and the TiN film can protect the Ti layer and prevent the Ti layer from being oxidized or absorbing moisture in the subsequent manufacturing process. The performance of the Ti layer in the blocking layer in the contact hole can be kept stable, and the contact resistance of the contact hole is not improved, so that the electric property of a semiconductor device is improved, and the reliability of the semiconductor device is improved.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly barrier layer and the manufacture method thereof in a kind of contact hole.
Background technology
Contact hole technique is a very important ring in the semiconductor manufacturing, and at first contact hole technique form the contact hole opening mainly in three steps on Semiconductor substrate, form afterwards barrier layer, forms at last metal level.For semiconductor device, the contact resistance of contact hole is an important electrical characteristic parameter.As everyone knows, semiconductor device will have good electrical characteristic, and the contact resistance of contact hole requires little, and the barrier layer in contact hole has a great impact the contact resistance of contact hole.
At present, usually adopt Ti/TiN as the barrier layer in contact hole in barrier layer technique in contact hole, the barrier layer in contact hole is divided into two-layer, and ground floor Ti is adhesive layer, second layer TiN is the barrier layer, and Ti and TiN all use the mode of physical vapor deposition (PVD) to form.Wherein, the adhesion of Ti and Si is good, and Ti and Si reaction generation TiSi2, and contact resistance is little, and barrier layer TiN can prevent that Ti from reacting with other materials in follow-up technical process.
Please refer to Fig. 1, it is the structural representation of the barrier layer in contact hole in prior art.As shown in Figure 1, the barrier layer 1 in prior art in contact hole comprises Ti layer 11 and TiN layer 12, and wherein, Ti layer 11 is grown on the semiconductor base with contact hole opening, TiN layer 12 be grown in Ti layer 11 above.The technological process of the barrier layer 1 in contact hole is as follows: at first, complete the Ti deposition in the Ti of condition of high vacuum degree growth chamber, afterwards, arrive the deposition of completing TiN in the TiN growth chamber through cushion chamber.
Find in the manufacture process of semiconductor device, the contact resistance of contact hole is also unstable, the situation that contact resistance increases often occurs, and even occurs the contact resistance drift when serious, has affected the electrical characteristic of semiconductor device.In order to improve the performance of semiconductor device, improve the reliability of semiconductor device, those skilled in the art always searching cause reason that the contact resistance of contact hole increases even contact resistance drift with and solution.
Summary of the invention
The object of the present invention is to provide barrier layer and manufacture method thereof in a kind of contact hole, unstable with the contact resistance of the contact hole that solves existing semiconductor device, affect the problem of the performance of semiconductor device.
For solving the problems of the technologies described above, the invention provides the manufacture method of the barrier layer in a kind of contact hole, the manufacture method of the barrier layer in described contact hole comprises:
Semiconductor base is provided, has opening on described semiconductor base;
Form the Ti layer on described opening;
The described Ti layer of plasma bombardment forms a TiN layer;
Form the 2nd TiN layer on a described TiN layer.
Optionally, in the manufacture method of the barrier layer in described contact hole, described Ti layer forms by physical gas-phase deposition.
Optionally, in the manufacture method of the barrier layer in described contact hole, the temperature of described physical vapour deposition (PVD) is 200 ℃.
Optionally, in the manufacture method of the barrier layer in described contact hole, the chamber that forms a described TiN layer is same chamber with the chamber that forms described Ti layer.
Optionally, in the manufacture method of the barrier layer in described contact hole, described plasma is nitrogen gas plasma.
Optionally, in the manufacture method of the barrier layer in described contact hole, described the 2nd TiN layer forms by the metallo-organic compound chemical vapor deposition method.
The present invention also provides the barrier layer in a kind of contact hole, and the barrier layer in described contact hole comprises:
The Ti layer;
Be formed at the TiN layer on described Ti layer;
Be formed at the 2nd TiN layer on a described TiN layer.
Optionally, in the barrier layer in described contact hole, the thickness of a described TiN layer is less than 50 dusts.
Optionally, in the barrier layer in described contact hole, the thickness of described the 2nd TiN layer is 50 dusts～90 dusts.
The inventor studies discovery, cause the reason of the contact resistance increase of existing semiconductor device to be, in barrier layer in contact hole, the Ti layer is exposed in air because of vacuum breaker, cause Ti that oxidation occurs or absorb moisture, make the contact resistance of contact hole increase, affect the electrical characteristic of semiconductor device.In barrier layer and manufacture method thereof in contact hole provided by the invention; after the Ti layer forms; form a TiN layer by the described Ti layer of plasma bombardment; thereby closely covered one deck TiN film on described Ti layer surface; the TiN film can be protected the Ti layer, avoids the Ti layer that oxidation occurs in follow-up manufacturing process or absorbs moisture.Thus, the performance of the Ti layer in the barrier layer in contact hole can keep stable, and the contact resistance of contact hole can not increase yet, thereby has improved the electrical characteristic of semiconductor device, has improved the reliability of semiconductor device.
Description of drawings
Fig. 1 is the structural representation of the barrier layer in contact hole in prior art;
Fig. 2 is the structural representation of the barrier layer in a kind of contact hole of the embodiment of the present invention.
Embodiment
Below in conjunction with the drawings and specific embodiments, barrier layer and manufacture method thereof in the contact hole of the present invention's proposition are described in further detail.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only in order to convenient, the purpose of the aid illustration embodiment of the present invention lucidly.
In existing semiconductor device, the contact resistance of contact hole is very unstable, and contact resistance often increases, and even causes the contact resistance drift of contact hole when serious, has affected the electrical characteristic of semiconductor device.the inventor conducts in-depth research this, the reason of finding the contact resistance increase of contact hole is, need to enter formation TiN layer in the TiN growth chamber through cushion chamber form the Ti layer in barrier layer technique in contact hole in the Ti growth chamber after, little leakage occurs in cushion chamber or TiN growth chamber in this process, and transfer equipment breaks down and need to open cavity, vacuum breaker occurs in the capital, the Ti layer will be exposed in air, and Ti is very easy to airborne oxygen reacting generating compound or absorbs airborne aqueous vapor, will change the performance of Ti layer like this, make the contact resistance of contact hole increase, even cause the contact resistance drift of contact hole when serious, affect the performance of semiconductor device.
In order to address the above problem, the application has proposed following technical scheme:
Please refer to Fig. 2, it is the structural representation of the barrier layer in a kind of contact hole of the embodiment of the present invention.As shown in Figure 2, the manufacture method of the barrier layer 2 in described contact hole comprises: semiconductor base is provided, has opening on described semiconductor base; Form Ti layer 21 on described opening; The described Ti layer 21 of plasma bombardment forms a TiN layer 22; Form the 2nd TiN layer 23 on a described TiN layer 22.
Concrete, form opening on semiconductor base after, have deposited barrier layers on the semiconductor base of opening.The technological process of the barrier layer 2 in contact hole is specific as follows:
At first, carry out physical vapour deposition (PVD) (PVD) technique in the Ti of condition of high vacuum degree growth chamber and form Ti layer 21, the temperature of physical vapour deposition (PVD) (PVD) is 200 ℃.Then, the Ti growth chamber passes into nitrogen (N2), and uses the radio-frequency generator of 400kHz to make nitrogen (N2) that the surface that ionization forms nitrogen (N2) plasma bombardment Ti layer 21 occur.In this process, nitrogen (N2) plasma and Ti reaction generate TiN, thus, and at the Ti layer 21 very thin TiN layer 22 of surface formation one deck.As seen, the chamber that forms a TiN layer 22 is same chamber with the chamber that forms Ti layer 21, and the surface of Ti layer 21 is closely covered by one deck TiN film immediately after forming Ti layer 21.At last, enter the TiN growth chamber through after cushion chamber, the mode by metallo-organic compound chemical vapour deposition (CVD) (MOCVD) in the TiN growth chamber forms the 2nd TiN layer 23, thereby has completed the technical process of the barrier layer 2 in the contact hole.
Wherein, the time that nitrogen (N2) plasma bombardment forms a TiN layer 22 is 10 seconds to 20 seconds, and a TiN layer 22 of formation is the very thin rete of one deck, and its thickness is generally below 50 dusts.Preferably, the thickness of a TiN layer 22 at 10 dusts between 30 dusts.The one TiN layer 22 covers the surface of Ti layer 21, can avoid Ti that oxidation occurs.Simultaneously, by using the 21 surface formation of nitrogen (N2) plasma bombardment Ti layer, the uniformity of a TiN layer 22 is very good due to a TiN layer 22, and this also provides good platform for the growth of the 2nd TiN layer 23.The process time that metallo-organic compound chemical vapour deposition (CVD) (MOCVD) mode forms the 2nd TiN layer 23 is 260 seconds, and the 2nd TiN layer 23 to the one TiN layer 22 are thick, and its thickness is that 50 dusts are to 90 dusts.
Accordingly, the present embodiment also provides the barrier layer in a kind of contact hole, please continue with reference to figure 2, and the barrier layer 2 in described contact hole comprises:
Be formed at the TiN layer 22 on described Ti layer 21;
Be formed at the 2nd TiN layer 23 on a described TiN layer 22.
Concrete, a TiN layer 22 is the very thin retes of one deck, and the thickness of a TiN layer 22 is generally less than 50 dusts, and is preferred, the thickness of a described TiN layer 22 at 10 dusts between 30 dusts.The one TiN layer 22 covers on the surface of Ti layer 21, can avoid Ti oxidized.The 2nd TiN layer 23 to the one TiN layer 22 are thick, its thickness at 50 dusts between 90 dusts.
The metal level of formation contact hole above barrier layer 2 in contact hole, contact hole has been completed at this point.
To sum up; in barrier layer and manufacture method thereof in the contact hole that the embodiment of the present invention provides; top one deck TiN film that increased of Ti layer; the TiN film can protect the Ti layer to avoid occuring oxidation; in the technical process of TiN layer, the equipment abnormal causes vacuum breaker even form afterwards, also can not change the performance of Ti layer.It is stable that the contact resistance of contact hole is kept, and can not increase, thereby improve the electrical characteristic of semiconductor device, improved the reliability of semiconductor device.
Foregoing description is only the description to preferred embodiment of the present invention, is not any restriction to the scope of the invention, and any change, modification that the those of ordinary skill in field of the present invention is done according to above-mentioned disclosure all belong to the protection range of claims.
Claims (9)
1. the manufacture method of the barrier layer in a contact hole, is characterized in that, comprising:
Semiconductor base is provided, has opening on described semiconductor base;
Form the Ti layer in described opening;
The described Ti layer of plasma bombardment forms a TiN layer;
Form the 2nd TiN layer on a described TiN layer.
2. the manufacture method of the barrier layer in contact hole as claimed in claim 1, is characterized in that, described Ti layer forms by physical gas-phase deposition.
3. the manufacture method of the barrier layer in contact hole as claimed in claim 2, is characterized in that, the temperature of described physical gas-phase deposition is 200 ℃.
4. the manufacture method of the barrier layer in contact hole as claimed in claim 1, is characterized in that, the chamber that forms a described TiN layer is same chamber with the chamber that forms described Ti layer.
5. the manufacture method of the barrier layer in contact hole as claimed in claim 1, is characterized in that, described plasma is nitrogen gas plasma.
6. the manufacture method of the barrier layer in contact hole as claimed in claim 1, is characterized in that, described the 2nd TiN layer forms by the metallo-organic compound chemical vapor deposition method.
7. the barrier layer in a contact hole, is characterized in that, comprising:
The Ti layer;
Be formed at the TiN layer on described Ti layer;
Be formed at the 2nd TiN layer on a described TiN layer.
8. the barrier layer in contact hole as claimed in claim 7, is characterized in that, the thickness of a described TiN layer is less than 50 dusts.
9. the barrier layer in contact hole as claimed in claim 7, is characterized in that, the thickness of described the 2nd TiN layer is 50 dusts～90 dusts.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2013100851080A CN103165439A (en) | 2013-03-15 | 2013-03-15 | Blocking layer in contact hole and manufacturing method for blocking layer |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2013100851080A CN103165439A (en) | 2013-03-15 | 2013-03-15 | Blocking layer in contact hole and manufacturing method for blocking layer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112802798A (en) * | 2021-03-24 | 2021-05-14 | 上海华虹宏力半导体制造有限公司 | Semiconductor device and method for manufacturing the same |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002217133A (en) * | 2000-12-25 | 2002-08-02 | Applied Materials Inc | Method for forming barrier metal film |
| JP2005194540A (en) * | 2003-12-26 | 2005-07-21 | Tokyo Electron Ltd | Film deposition method, and semiconductor device |
| JP2006179645A (en) * | 2004-12-22 | 2006-07-06 | Matsushita Electric Ind Co Ltd | Semiconductor device and its manufacturing method |
| CN101325176A (en) * | 2007-06-15 | 2008-12-17 | 株式会社瑞萨科技 | Manufacturing method of semiconductor device |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002217133A (en) * | 2000-12-25 | 2002-08-02 | Applied Materials Inc | Method for forming barrier metal film |
| JP2005194540A (en) * | 2003-12-26 | 2005-07-21 | Tokyo Electron Ltd | Film deposition method, and semiconductor device |
| JP2006179645A (en) * | 2004-12-22 | 2006-07-06 | Matsushita Electric Ind Co Ltd | Semiconductor device and its manufacturing method |
| CN101325176A (en) * | 2007-06-15 | 2008-12-17 | 株式会社瑞萨科技 | Manufacturing method of semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112802798A (en) * | 2021-03-24 | 2021-05-14 | 上海华虹宏力半导体制造有限公司 | Semiconductor device and method for manufacturing the same |
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Application publication date: 20130619 |