CN103151101B - Doped graphene flexible transparent electrode and preparation method thereof - Google Patents
Doped graphene flexible transparent electrode and preparation method thereof Download PDFInfo
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- CN103151101B CN103151101B CN201310112679.9A CN201310112679A CN103151101B CN 103151101 B CN103151101 B CN 103151101B CN 201310112679 A CN201310112679 A CN 201310112679A CN 103151101 B CN103151101 B CN 103151101B
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Abstract
The invention discloses a kind of doped graphene flexible transparent electrode and preparation method thereof；Described flexible transparent electrode is made up of the doped graphene doped with heteroatom and molecule in flexible transparent substrate and flexible transparent substrate；The doping method of Graphene has non-proxy doping, alternative dopings and composite mixed.The Graphene that the present invention grows with chemical vapour deposition technique (CVD) is as raw material, the doping of Graphene heteroatom and molecular level is realized through chemical means, it is used for building flexible transparent electrode by the Graphene through overdoping, prepared doped graphene flexible transparent electrode has low resistance, high transmission rate and flexible advantageous property, its square resistance reaches 3 ~ 500 Ω/sq, light transmittance reaches 87.4 ~ 97.6%, is better than transparency electrode prepared by the materials such as existing tin indium oxide (ITO), carbon nano-tube film.
Description
Technical field
The present invention relates to flexible transparent electrode field of material technology, particularly to a kind of doped graphene flexible transparent electrode and preparation method thereof.
Background technology
Transparency conductive electrode material has a wide range of applications in fields such as touch-screen, FPD, luminescent device, solar cells.Current electronic device is mainly in hard substrate, and flexible device gradually causes the concern of more and more people, is the trend of future development.Graphene, as a kind of semi-metallic, has the flexible hole gap structure of prosperity, determines its feature with flexibility；The internal carrier concentration of Graphene is up to 1013 cm-2, its theoretical mobility can reach 200000 cm2/ V s, and the light transmittance of Graphene reaches 97.7%, and these unique and excellent character make Graphene become one of most potential substitute of transparent electrode material.
Chemical vapor deposition (CVD) method growth Graphene can be by the transfer of large-area Graphene on the substrate arbitrarily needed, it is achieved the preparation of large-area transparent electrode.But large-area graphene prepared by CVD is polycrystalline structure, there is more defect and crystal boundary, these defects cause current carrying density to reduce, and on the other hand crystal boundary reduces mobility, so that it has the biggest film resistor (> 1 k Ω/sq), it is far longer than the resistance of existing transparent conducting film；Current carrying density is also much smaller than the Graphene of mechanical stripping.Large area single crystal graphene is difficult to be grown by CVD so far, therefore, is modified existing polycrystalline CVD Graphene, reduces defect and the crystal boundary impact on electrical properties, is to improve the maximally effective way of its utilization ratio.
Summary of the invention
In view of this, the invention provides a kind of doped graphene flexible transparent electrode and preparation method thereof, Graphene through overdoping is used for building flexible transparent electrode, and prepared doped graphene flexible transparent electrode has low resistance, high transmission rate and flexible advantageous property.
The invention discloses a kind of doped graphene flexible transparent electrode, described flexible transparent electrode is made up of the doped graphene doped with heteroatom and molecule in flexible transparent substrate and flexible transparent substrate.
Further, the size of described flexible transparent electrode is 1 ~ 80 inch, and the thickness of described doped graphene is 0.7 ~ 3.0nm, and in described doped graphene, the doping content of heteroatom and molecule is 0.025 ~ 15 at%.
The invention also discloses the preparation method of a kind of doped graphene flexible transparent electrode, comprise the following steps:
1) use chemical vapour deposition technique, under conditions of gaseous carbon sources and protection gas, in substrate, grow Graphene；
2) suprabasil Graphene will be grown in and transfer in flexible transparent substrate, obtain Graphene flexible transparent conductive film；
3) Graphene flexible transparent conductive film soaked in the solution containing chemical doping reagent doping or carries out metal nanoparticle doping, obtaining doped graphene flexible transparent conductive film；
4) doped graphene flexible transparent conductive film is carried out excision forming, obtain doped graphene flexible transparent electrode.
Further, in described step 1), substrate is Copper Foil, and gaseous carbon sources is methane, and protection gas is nitrogen, and growth temperature is 600 ~ 1100 DEG C, and growth time is 6 ~ 60min.
Further, in described step 3), described chemical doping reagent is HNO3、H2SO4、KMnO4、AuCl3Or K2S2O8, described metal nanoparticle is one or more in Au, Ag, Fe, Cu and Pt.
The invention also discloses the preparation method of another kind of doped graphene flexible transparent electrode, comprise the following steps:
1) use chemical vapour deposition technique, under conditions of gaseous carbon sources, gas dopant and protection gas, in substrate, grow the Graphene of doping；
2) suprabasil doped graphene will be grown in and transfer in flexible transparent substrate, obtain doped graphene flexible transparent conductive film；
3) doped graphene flexible transparent conductive film is carried out excision forming, obtain doped graphene flexible transparent electrode.
Further, in described step 1), substrate is Copper Foil, and gaseous carbon sources is methane, and protection gas is nitrogen, and gas dopant is one or more in ammonia, borine and ammonia borane, and growth temperature is 600 ~ 1100 DEG C, and growth time is 6 ~ 60min.
The invention also discloses the preparation method of another kind of doped graphene flexible transparent electrode, comprise the following steps:
1) use chemical vapour deposition technique, under conditions of gaseous carbon sources, gas dopant and protection gas, in substrate, grow the Graphene of doping；
2) suprabasil doped graphene will be grown in and transfer in flexible transparent substrate, obtain single doped graphene flexible transparent conductive film；
3) single doped graphene flexible transparent conductive film soaked in the solution containing chemical doping reagent doping or carries out metal nanoparticle doping, obtaining composite mixed Graphene flexible transparent conductive film；
4) composite mixed Graphene flexible transparent conductive film is carried out excision forming, obtain doped graphene flexible transparent electrode.
Further, in described step 1), substrate is Copper Foil, and gaseous carbon sources is methane, and protection gas is nitrogen, and gas dopant is one or more in ammonia, borine and ammonia borane, and growth temperature is 600 ~ 1100 DEG C, and growth time is 6 ~ 60min.
Further, in described step 3), described chemical doping reagent is HNO3、H2SO4、KMnO4、AuCl3Or K2S2O8, described metal nanoparticle is one or more in Au, Ag, Fe, Cu and Pt.
The beneficial effects of the present invention is: the Graphene that the present invention grows with chemical vapour deposition technique (CVD) is as raw material, the doping of Graphene heteroatom and molecular level is realized through chemical means, it is used for building flexible transparent electrode by the Graphene through overdoping, prepared doped graphene flexible transparent electrode has low resistance, high transmission rate and flexible advantageous property, its square resistance reaches 3 ~ 500 Ω/sq, light transmittance reaches 87.4 ~ 97.6%, is better than transparency electrode prepared by the materials such as existing tin indium oxide (ITO), carbon nano-tube film；The doped graphene flexible transparent electrode of the present invention can substitute for traditional transparent conducting film, is applied to the fields such as flexible liquid crystal panel, flexible touch screen, solar cell.
Accompanying drawing explanation
In order to make the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing, the present invention is described in further detail, wherein:
Fig. 1 is the manufacturing process schematic diagram of non-proxy doped graphene flexible transparent electrode；
Fig. 2 is the manufacturing process schematic diagram of alternative dopings Graphene flexible transparent electrode；
Fig. 3 is the manufacturing process schematic diagram of composite mixed Graphene flexible transparent electrode；
Fig. 4 is the chemical constitution schematic diagram of composite mixed rear graphenic surface heteroatom and group.
Detailed description of the invention
Hereinafter with reference to accompanying drawing, the preferred embodiments of the present invention are described in detail.
The doped graphene flexible transparent electrode of the present invention is made up of the doped graphene doped with heteroatom and molecule in flexible transparent substrate and flexible transparent substrate；The size of described flexible transparent electrode is 1 ~ 80 inch, and the thickness of described doped graphene is 0.7 ~ 3.0nm, and in described doped graphene, the doping content of heteroatom and molecule is 0.025 ~ 15 at%.
In the present invention, the doping method of Graphene has non-proxy doping, alternative dopings and composite mixed.
Embodiment
1
As it is shown in figure 1, use non-proxy doping, the preparation method of the doped graphene flexible transparent electrode of the present embodiment comprises the following steps:
1) use chemical vapour deposition technique, under conditions of gaseous carbon sources and protection gas, in substrate, grow Graphene；
2) suprabasil Graphene will be grown in and transfer in flexible transparent substrate, obtain Graphene flexible transparent conductive film；
3) Graphene flexible transparent conductive film is soaked in the solution containing chemical doping reagent doping, obtain doped graphene flexible transparent conductive film；
4) doped graphene flexible transparent conductive film is carried out excision forming, obtain doped graphene flexible transparent electrode.
In described step 1), preferred process conditions are: substrate is Copper Foil, and gaseous carbon sources is methane, and protection gas is nitrogen, and growth temperature is 600 ~ 1100 DEG C, and growth time is 6 ~ 60min.
In described step 3), described chemical doping reagent is HNO3、H2SO4、KMnO4、AuCl3Or K2S2O8。
The square resistance of the doped graphene flexible transparent electrode that the present embodiment prepares is between 35 ~ 450 Ω/sq, and light transmittance is between 90.8 ~ 97.1%.
Embodiment
2
The present embodiment is step 3) with the difference of embodiment 1, the present embodiment is that Graphene flexible transparent conductive film is carried out metal nanoparticle doping, concrete doping method is: prepare the metal nanoparticle of required size, (described metal nanoparticle preferably is selected from Au to the nano particle of the different-shapes such as nano wire, Ag, Fe, one or more in Cu and Pt), the graphenic surface being coated uniformly in flexible transparent substrate, carry out multi-segment program intensification annealing, form the Graphene of metal nanoparticle doping, obtain doped graphene flexible transparent conductive film.
The square resistance of the doped graphene flexible transparent electrode that the present embodiment prepares is between 20 ~ 150 Ω/sq, and light transmittance is between 90.1 ~ 95.5%.
Embodiment
3
The present embodiment is step 3) with the difference of embodiment 1, the present embodiment is that Graphene flexible transparent conductive film is carried out metal nanoparticle doping, concrete doping method is: the graphenic surface being coated uniformly in flexible transparent substrate by the mixture of metal precursor and reducing agent, being then passed through ultraviolet lighting makes presoma reduce, obtain being dispersed in the metal nanoparticle of graphenic surface, other product are washed with water, form the Graphene of metal nanoparticle doping, obtain doped graphene flexible transparent conductive film.
The square resistance of the doped graphene flexible transparent electrode that the present embodiment prepares is between 5 ~ 150 Ω/sq, and light transmittance is between 89.0 ~ 96.8%.
Embodiment
4
As in figure 2 it is shown, employing alternative dopings, the preparation method of the doped graphene flexible transparent electrode of the present embodiment comprises the following steps:
1) use chemical vapour deposition technique, under conditions of gaseous carbon sources, gas dopant and protection gas, in substrate, grow the Graphene of doping；
2) suprabasil doped graphene will be grown in and transfer in flexible transparent substrate, obtain doped graphene flexible transparent conductive film；
3) doped graphene flexible transparent conductive film is carried out excision forming, obtain doped graphene flexible transparent electrode.
In described step 1), preferred process conditions are: substrate is Copper Foil, and gaseous carbon sources is methane, and protection gas is nitrogen, and gas dopant is one or more in ammonia, borine and ammonia borane, and growth temperature is 600 ~ 1100 DEG C, and growth time is 6 ~ 60min.
The square resistance of the doped graphene flexible transparent electrode that the present embodiment prepares is between 60 ~ 500 Ω/sq, and light transmittance is between 93.6 ~ 96.7%.
Embodiment
5
As it is shown on figure 3, use composite mixed, the preparation method of the doped graphene flexible transparent electrode of the present embodiment comprises the following steps:
1) use chemical vapour deposition technique, under conditions of gaseous carbon sources, gas dopant and protection gas, in substrate, grow the Graphene of doping；
2) suprabasil doped graphene will be grown in and transfer in flexible transparent substrate, obtain single doped graphene flexible transparent conductive film；
3) single doped graphene flexible transparent conductive film is soaked in the solution containing chemical doping reagent doping, obtain composite mixed Graphene flexible transparent conductive film；
4) composite mixed Graphene flexible transparent conductive film is carried out excision forming, obtain doped graphene flexible transparent electrode.
In described step 1), preferred process conditions are: substrate is Copper Foil, and gaseous carbon sources is methane, and protection gas is nitrogen, and gas dopant is one or more in ammonia, borine and ammonia borane, and growth temperature is 600 ~ 1100 DEG C, and growth time is 6 ~ 60min.
In described step 3), described chemical doping reagent is HNO3、H2SO4、KMnO4、AuCl3Or K2S2O8。
Fig. 4 is the chemical constitution schematic diagram of composite mixed rear graphenic surface heteroatom and group, and the square resistance of the doped graphene flexible transparent electrode that the present embodiment prepares is between 40 ~ 350 Ω/sq, and light transmittance is between 91.8 ~ 95.7%.
Embodiment
6
The present embodiment is step 3) with the difference of embodiment 5, the present embodiment is that single doped graphene flexible transparent conductive film is carried out metal nanoparticle doping, concrete doping method is: prepare the nano particle (described metal nanoparticle preferably is selected from one or more in Au, Ag, Fe, Cu and Pt) of the different-shapes such as the metal nanoparticle of required size, nano wire, uniformly coating or evaporation graphenic surface in flexible transparent substrate, carry out multi-segment program intensification annealing, obtain composite mixed Graphene flexible transparent conductive film.
The square resistance of the doped graphene flexible transparent electrode that the present embodiment prepares is between 3 ~ 250 Ω/sq, and light transmittance is between 87.4 ~ 96.7%.
The doped graphene flexible transparent electrode that the different doping methods of above-described embodiment prepare and undoped Graphene flexible transparent electrode carry out performance parameter comparison, result as shown in Table 1:
Visible, through the method for the present invention, Graphene is carried out the doping of heteroatom and molecular level, higher light transmittance is kept while significantly reducing resistance, constructed flexible transparent electrode square resistance reaches 3 ~ 500 Ω/sq, light transmittance reaches 87.4 ~ 97.6% so that the doped graphene flexible transparent electrode of the present invention can substitute for traditional transparent conducting film.
Finally illustrate is, above example is only in order to illustrate technical scheme and unrestricted, although by referring to the preferred embodiments of the present invention, invention has been described, but it will be understood by those within the art that, in the form and details it can be made various change, the spirit and scope of the present invention limited without departing from appended claims.
Claims (2)
1. a doped graphene flexible transparent electrode, it is characterised in that: described flexible transparent electrode is made up of the doped graphene doped with heteroatom and molecule in flexible transparent substrate and flexible transparent substrate；In described doped graphene, the doping content of heteroatom and molecule is 0.025 ~ 15 at%, and in described doped graphene, heterogeneous molecular is KMnO4、AuCl3Or K2S2O8, in described doped graphene, heteroatom is metal nanoparticle, and described metal nanoparticle is one or more in Au, Ag, Fe, Cu and Pt.
Doped graphene flexible transparent electrode the most according to claim 1, it is characterized in that: the size of described flexible transparent electrode is 1 ~ 80 inch, the thickness of described doped graphene is 0.7 ~ 3.0nm, and in described doped graphene, the doping content of heteroatom and molecule is 0.025 ~ 15 at%.
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|---|---|---|---|---|
| CN103345963B (en) * | 2013-06-28 | 2015-07-15 | 重庆墨希科技有限公司 | Graphene composite transparent electrode and preparation method and application thereof |
| CN104803371A (en) * | 2014-01-25 | 2015-07-29 | 福建省辉锐材料科技有限公司 | Graphene doping method |
| CN103943654B (en) * | 2014-03-05 | 2017-02-01 | 上海天马有机发光显示技术有限公司 | OLED array substrate, manufacturing method thereof, display panel and display device |
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| CN104616717B (en) * | 2015-01-13 | 2016-12-07 | 浙江大学 | Conductive material that a kind of graphene film and metal Nano structure are compound and preparation method |
| CN106409755B (en) * | 2015-07-31 | 2019-07-30 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and forming method thereof |
| KR102437578B1 (en) * | 2015-11-11 | 2022-08-26 | 삼성전자주식회사 | Transparent electrodes and electronic devices including the same |
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| CN106095182A (en) * | 2016-06-14 | 2016-11-09 | 天津宝兴威科技有限公司 | The method making touch screen with Graphene metallic composite |
| CN106783217B (en) * | 2017-01-16 | 2018-07-13 | 天津大学 | Method for efficiently preparing nitrogen-doped graphene carbon nanotube film |
| CN109965868A (en) * | 2019-04-08 | 2019-07-05 | 清华大学 | It is tatooed formula electrode preparation method and device based on multi-layer graphene |
| CN112736176B (en) * | 2019-10-14 | 2023-01-13 | 中国科学院金属研究所 | Method for improving luminous efficiency of light-emitting diode |
| CN115010124A (en) * | 2022-06-16 | 2022-09-06 | 北京石墨烯研究院 | Method for regulating and controlling infrared emissivity of alkene carbon material and application thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102376787A (en) * | 2011-11-04 | 2012-03-14 | 电子科技大学 | Graphene solar cell and preparation method thereof |
| CN102386296A (en) * | 2010-09-02 | 2012-03-21 | 宋健民 | Graphene transparent electrode, graphene light-emitting diode and preparation method thereof |
| CN102456753A (en) * | 2010-10-22 | 2012-05-16 | 株式会社东芝 | Photoelectric conversion element and manufacturing method thereof |
| CN102486993A (en) * | 2010-12-02 | 2012-06-06 | 国家纳米科学中心 | Preparation method of doped graphene and application of doped graphene |
| CN102674335A (en) * | 2012-05-24 | 2012-09-19 | 哈尔滨工业大学 | Method for preparing graphene based on free radical reaction at low temperature |
-
2013
- 2013-04-02 CN CN201310112679.9A patent/CN103151101B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102386296A (en) * | 2010-09-02 | 2012-03-21 | 宋健民 | Graphene transparent electrode, graphene light-emitting diode and preparation method thereof |
| CN102456753A (en) * | 2010-10-22 | 2012-05-16 | 株式会社东芝 | Photoelectric conversion element and manufacturing method thereof |
| CN102486993A (en) * | 2010-12-02 | 2012-06-06 | 国家纳米科学中心 | Preparation method of doped graphene and application of doped graphene |
| CN102376787A (en) * | 2011-11-04 | 2012-03-14 | 电子科技大学 | Graphene solar cell and preparation method thereof |
| CN102674335A (en) * | 2012-05-24 | 2012-09-19 | 哈尔滨工业大学 | Method for preparing graphene based on free radical reaction at low temperature |
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