CN104803371A - Graphene doping method - Google Patents
Graphene doping method Download PDFInfo
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- CN104803371A CN104803371A CN201410035764.4A CN201410035764A CN104803371A CN 104803371 A CN104803371 A CN 104803371A CN 201410035764 A CN201410035764 A CN 201410035764A CN 104803371 A CN104803371 A CN 104803371A
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Abstract
The invention discloses a graphene doping method. The method comprises the following steps: preparing a doped liquid containing doping element; placing a target substrate into a closed container, atomizing the doped liquid and then introducing the atomized doped liquid into a sealed container, so that the doped liquid covers the surface of the substrate to generated a first doped layer; removing the substrate with the doped liquid and carrying out curing treatment; and generating a graphene layer on the first doped layer. According to the invention, a doped layer coats on the substrate in advance, and the graphene layer can be generated on the doped layer. In addition, the doped layer coated in advance can make the uniform distribution of large area graphene doping; and the doped layer is located between the substrate and the graphene layer and does not fall off easily, and can be kept stable for a long time in heat and moisture environment.
Description
Technical field
The present invention relates to field of graphene, particularly relate to a kind of Graphene adulterating method.
Background technology
At present, carbon atom is that the material Graphene of the netted bonding of sexangle has much outstanding electrical characteristic and mechanical characteristics, is expected to for high speed transistor, touch panel and nesa coating used for solar batteries etc.After being found since 2004, Graphene is forward position study hotspot all the time.All to dive in the application at it, nesa coating is closest to practical application examples, can as the equivalent material of the current ITO generally used, for touch panel, flexible liquid crystal panel, solar cell and Organic Light Emitting Diode etc.This purposes of nesa coating enjoys the reason of expectation to be, Graphene possesses higher carrier mobility and thinner thickness, and the transparency is higher, is not only visible ray, and Graphene also can pass through most of infrared rays.Therefore, for the solar cell of also wishing to utilize infrared rays to generate electricity, Graphene is expected to become epoch-making nesa coating.Meanwhile, compared with the ITO being unsuitable for bending, Graphene also possesses flexible higher advantage.
But also there are some problems at present as nesa coating application in Graphene.Such as, how to obtain the intact grapheme material of big area quality and Graphene zero defect is transferred on the material of needs; In addition, graphite olefinic zero gap semiconductor, also needs to regulate and control its band gap, obtains satisfied carrier concentration and carrier polarity.Doping is considered to regulate and control the effective means of Graphene electrical property.The aspect of doping comprises instead type doping and adulterates with adsorption type.Such as, in the process of growing graphene, pass into a small amount of NH3 gas, when graphene growth, N replaces part C atom, and Graphene electron distributions is changed.Although this instead type doping changes its electron distributions state, also destroy the structure of Graphene, thus its mechanical property etc. all can change.In addition, by soaking, the modes such as evaporation, make doping (electron donor(ED) or electron acceptor(EA)) be adsorbed onto graphenic surface, also can successfully improve Graphene electrical property.But due in this doping way, doping is adsorbed on graphenic surface, heat or wet environment volatile or come off, effect of thus adulterating is unstable, and doping is volatile or come off, and is not suitable for the doping of large-area graphene.
Summary of the invention
The object of the present invention is to provide a kind of Graphene adulterating method, it can realize Large-Area-Uniform doping, high, the applicable suitability for industrialized production of transparency of Graphene.
For achieving the above object, the present invention is by the following technical solutions:
A kind of Graphene adulterating method, is characterized in that, comprising:
The doping liquid of configuration containing doped element;
Target substrate is put into encloses container, passes in encloses container after doping liquid is atomized, make doping liquid
Be paved with substrate surface and generate the first doped layer;
The substrate of taking out with doping liquid is cured process;
First doped layer generates graphene layer.
Preferably, it further comprises step: on graphene layer, generate the second doped layer.
Preferably, described doped element is one of Al, Mg, Au, Fe or the compound containing Al, Mg, Au, Fe at least one.
Preferably, described method is specially:
Getting doped element powder 1 ~ 2g is dissolved in the solvent of 200 ~ 300ml, and configuration obtains the liquid that adulterates;
Doping liquid is put into spraying gun be atomized, the doping liquid after atomization passes into encloses container 10 ~ 20min, and substrate is placed in encloses container, continues the doping liquid 30 ~ 50min after passing into atomization simultaneously, makes doping liquid be paved with substrate surface;
Substrate is carried out heat baking more than 10min and be cured process;
First doped layer generates graphene layer.
Preferably, described solvent is volatile solvent soln or water.
Preferably, described volatile solvent soln at least comprises dehydrated alcohol, methyl alcohol, Virahol or acetone one wherein.
Preferably, described substrate is PET base.
The present invention adopts above technical scheme, by being coated with one deck doping in advance in substrate, and then it generates graphene layer, can meet the doping preparation of large-area graphene layer; In addition, be coated with one deck doped layer in advance, large-area graphene dopant profiles can be made more even; In addition, doped layer is between substrate and graphene layer, and more difficult drop-off, also can stable for extended periods of time performance under heat and wet environment.
Accompanying drawing explanation
1a ~ 1c in Fig. 1 is the course of processing schematic diagram of Graphene adulterating method embodiment one of the present invention;
2a ~ 2d in Fig. 2 is the course of processing schematic diagram of Graphene adulterating method embodiment two of the present invention.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
As shown in the 1a ~ 1c in Fig. 1, a kind of Graphene adulterating method disclosed by the invention, comprising:
The doping liquid of configuration containing doped element;
After the liquid that will adulterate atomization, encloses container is put in substrate 1, pass in encloses container after doping liquid is atomized, make doping liquid be paved with substrate surface and generate the first doped layer 2;
Take out substrate 1 and be cured process.
First doped layer 2 generates graphene layer 3.
Embodiment one:
Get doped element powder 1.6g to be dissolved in the solvent of 250ml (wherein doping is the FeCl3 compound containing Fe element, and solvent is anhydrous ethanol solvent) configuration and to obtain the liquid that adulterates; Doping liquid is put into spraying gun be atomized, the doping liquid after atomization passes into encloses container 10min, and substrate is placed in encloses container, continues the doping liquid 30min after passing into atomization simultaneously, makes doping liquid be paved with substrate 1 Surface Creation first doped layer 2; Substrate 1 is carried out heat baking 10min and be cured process.First doped layer 2 generates graphene layer 3.In the present embodiment, substrate 1 is PET base, and the Graphene sheet resistance of acquisition is 180 Ω/.Meanwhile, again test after the substrate with Graphene is placed 30 days under air ambient, the sheet resistance of Graphene is 178 Ω/, has almost no change, and adopts adulterating method of the present invention, the Graphene doping effect stability of acquisition.
Embodiment two:
As shown in the 2a ~ 2d in Fig. 2, get doped element powder 1g and to be dissolved in the solvent of 250ml (wherein doping is the AuCl3 compound containing Au element, and solvent is methanol solvate) configuration and to obtain the liquid that adulterates; Doping liquid is put into spraying gun be atomized, the doping liquid after atomization passes into encloses container 15min, and substrate 1 is placed in encloses container, continues the doping liquid 35min after passing into atomization simultaneously, makes doping liquid be paved with substrate surface and generates the first doped layer 2; Substrate 1 is carried out heat baking 5min and be cured process; First doped layer 2 generates graphene layer 3.Graphene layer 3 generates the second doped layer 4.In the present embodiment, substrate 1 is PET base, and the sheet resistance of test Graphene is 130 Ω/, and place under air ambient after 30 days and testing, sheet resistance is 150 Ω/, changes less.
In embody rule of the present invention, volatile solvent soln also can adopt Virahol or acetone, and mixing described doped element is one of Al, Mg, Au, Fe or the compound containing Al, Mg, Au, Fe at least one.
The present invention is by even spread first doped layer in substrate, and it does not affect base clear degree and performance thereof, then in substrate, generates graphene layer, doped layer is as electron donor(ED) or acceptor, can with graphene layer generation charge transfer, thus change Graphene fermi level, improve its electroconductibility; And the second doped layer can be coated with at graphene layer, more further improve its electrical property; And utilize spraying gun to make the doping liquid being dissolved with doped element more be evenly distributed in substrate surface.By the graphene layer that the graphene layer after the present invention adulterates adulterates relatively by other means, its sheet resistance have also been obtained reduction, makes its performance more superior.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (7)
1. a Graphene adulterating method, is characterized in that, comprising:
The doping liquid of configuration containing doped element;
Target substrate is put into encloses container, passes in encloses container after doping liquid is atomized, make doping liquid
Be paved with substrate surface and generate the first doped layer;
The substrate of taking out with doping liquid is cured process;
First doped layer generates graphene layer.
2. Graphene adulterating method according to claim 1, it is characterized in that, it further comprises step: on graphene layer, generate the second doped layer.
3. Graphene adulterating method according to claim 1, is characterized in that, described doped element is one of Al, Mg, Au, Fe or the compound containing Al, Mg, Au, Fe at least one.
4. Graphene adulterating method according to claim 1, it is characterized in that, it is specially:
Getting doped element powder 1 ~ 2g is dissolved in the solvent of 200 ~ 300ml, and configuration obtains the liquid that adulterates;
Doping liquid is put into spraying gun be atomized, the doping liquid after atomization passes into encloses container 10 ~ 20min, and substrate is placed in encloses container, continues the doping liquid 30 ~ 50min after passing into atomization simultaneously, makes doping liquid be paved with substrate surface;
Substrate is carried out heat baking more than 10min and be cured process;
First doped layer generates graphene layer.
5. Graphene adulterating method according to claim 4, is characterized in that, described solvent is volatile solvent soln or water.
6. Graphene adulterating method according to claim 5, is characterized in that, described volatile solvent soln at least comprises dehydrated alcohol, methyl alcohol, Virahol or acetone one wherein.
7. Graphene adulterating method according to claim 1, is characterized in that, described substrate is PET base.
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| CN201410035764.4A CN104803371A (en) | 2014-01-25 | 2014-01-25 | Graphene doping method |
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| CN201410035764.4A CN104803371A (en) | 2014-01-25 | 2014-01-25 | Graphene doping method |
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Citations (5)
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| CN102557728A (en) * | 2012-02-17 | 2012-07-11 | 上海大学 | Method for preparing graphene film and graphene composite carbon film |
| WO2013032233A2 (en) * | 2011-08-30 | 2013-03-07 | 전자부품연구원 | Graphene-based laminate including doped polymer layer |
| CN103151101A (en) * | 2013-04-02 | 2013-06-12 | 重庆绿色智能技术研究院 | Doped graphene flexible transparent electrode and preparation method thereof |
| CN103318879A (en) * | 2013-06-28 | 2013-09-25 | 重庆墨希科技有限公司 | Graphene preparation method based on transfer thin film |
| CN103400632A (en) * | 2013-07-17 | 2013-11-20 | 常州二维碳素科技有限公司 | Graphene doping material, and preparation method and application of graphene doping material |
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- 2014-01-25 CN CN201410035764.4A patent/CN104803371A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013032233A2 (en) * | 2011-08-30 | 2013-03-07 | 전자부품연구원 | Graphene-based laminate including doped polymer layer |
| CN102557728A (en) * | 2012-02-17 | 2012-07-11 | 上海大学 | Method for preparing graphene film and graphene composite carbon film |
| CN103151101A (en) * | 2013-04-02 | 2013-06-12 | 重庆绿色智能技术研究院 | Doped graphene flexible transparent electrode and preparation method thereof |
| CN103318879A (en) * | 2013-06-28 | 2013-09-25 | 重庆墨希科技有限公司 | Graphene preparation method based on transfer thin film |
| CN103400632A (en) * | 2013-07-17 | 2013-11-20 | 常州二维碳素科技有限公司 | Graphene doping material, and preparation method and application of graphene doping material |
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Application publication date: 20150729 |