CN103151097A - Back electrode slurry applied to full-aluminum back field of crystalline silicon battery - Google Patents
Back electrode slurry applied to full-aluminum back field of crystalline silicon battery Download PDFInfo
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- CN103151097A CN103151097A CN2013100892593A CN201310089259A CN103151097A CN 103151097 A CN103151097 A CN 103151097A CN 2013100892593 A CN2013100892593 A CN 2013100892593A CN 201310089259 A CN201310089259 A CN 201310089259A CN 103151097 A CN103151097 A CN 103151097A
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Abstract
The invention provides back electrode slurry applied to a full-aluminum back field of a crystalline silicon battery. The back electrode slurry is characterized by being prepared by mixing the following components by weight percent: 15-30% of coated base metal, 40-60% of silver powder, 5-18% of glass powder and 10-20% of organic carrier. The back electrode slurry disclosed by the invention has the following effects that (1) a preparation process of a back electrode of the full-aluminum back field can be excellently implemented; and (2) the production cost is reduced, and the economic benefit for corporations is improved.
Description
Technical field: the present invention relates to the backplane slurry that the full aluminium back surface field of a kind of crystal silicon battery slurry, particularly a kind of crystal silicon battery is used.
Background technology: have the making at its back side of crystal silicon battery now, generally first to print back electrode at the back side of silicon chip to republish the aluminium back surface field, the deficiency that this kind production method produces is: the zone at back electrode place can stop the covering of aluminium paste, make the back side of silicon chip can not form full aluminium back surface field, thereby can not play the effects such as the purifying back side, gettering, be unfavorable for the raising of photoelectric conversion efficiency.the deficiency that produces for solving this production method, improve the photoelectric conversion efficiency of crystal silicon solar batteries, someone has proposed application number is 201110208995.7, name is called the technical scheme of " a kind of crystal silicon cell back field back pole and typography thereof ", this scheme is first to print the aluminium back surface field at the back side of silicon chip, and then printing back electrode, it can solve the deficiencies in the prior art preferably, can improve the photoelectric conversion efficiency of crystal silicon battery, but, in use it but exists deficiency, can not form good coupling when being backplane slurry (silver slurry or silver-colored aluminium paste) and aluminium sheet sintering, easily produce be full of cracks in the contact position and peel off, poor electric conductivity, the shortcomings such as the back electrode solderability is poor, thereby make this technology can not obtain good use in practice.
Summary of the invention: the object of the invention is to, the deficiency that in use exists for technique scheme, and the backplane slurry that the full aluminium back surface field of a kind of crystal silicon battery is used is proposed, it can solve the deficiency that technique scheme in use exists preferably, effectively improves the photoelectric conversion efficiency of crystal silicon battery.
Can realize purpose of the present invention by following technical proposals, the backplane slurry that the full aluminium back surface field of a kind of crystal silicon battery is used is characterized in that, this backplane slurry is comprised of after mixing following compositions in weight percentage: coat base metal 15~30wt%; Silver powder 40~60wt%; Glass dust 5~18wt%; Organic carrier 10~20wt%.
Coat base metal by coating and be wrapped by thing and consist of, coating is tin or silver, is wrapped by thing and is a kind of in base metal; Coating is 10~40wt%, and being wrapped by thing is 60~90wt%.
The particle diameter of coating base metal<10 μ m.
effect of the present invention is: 1, can make the back electrode preparation technology of full aluminium back surface field be able to good enforcement, this mainly is, the present invention improves existing backplane slurry, use high-purity in slurry, high conductivity, low melting point coats base metal (as: tin-aluminium coats base metal) Substitute For Partial silver powder, in sintering process, can either make silver powder and aluminium back surface field form good sintering intermediate layer, the coefficient of expansion and aluminium back surface field coupling, be difficult for be full of cracks and peel off, has good electric conductivity, can guarantee to greatest extent the welding performance of ohm contact performance and the welding of slurry again, full aluminium back surface field technique is implemented in full, 2, reduced production cost, for economic benefit has improved in enterprise, this is to have substituted part silver powder with the coating base metal in the technical program, coats the price of base metal far below silver, so, can be enterprise every year and save a cost payout.
Below in conjunction with embodiment, the present invention is further set forth:
Embodiment:;
The backplane slurry that embodiment 1, the full aluminium back surface field of a kind of crystal silicon battery are used, it is characterized in that, this backplane slurry is comprised of after mixing following compositions in weight percentage: tin-aluminium coats base metal 21wt%, coating tin 20wt% wherein, be wrapped by thing aluminium 80wt%, the particle diameter of tin-aluminium coating base metal<10 μ m; Silver powder 52wt%; Glass dust 12wt%; Organic carrier 15wt%.
The backplane slurry that embodiment 2, the full aluminium back surface field of a kind of crystal silicon battery are used, it is characterized in that, this backplane slurry is comprised of after mixing following compositions in weight percentage: tin-copper clad base metal 18wt%, coating tin 25wt% wherein, be wrapped by thing copper 75wt%, the particle diameter of tin-copper clad base metal<10 μ m; Silver powder 55wt%; Glass dust 15wt%; Organic carrier 13wt%.
The backplane slurry that embodiment 3, the full aluminium back surface field of a kind of crystal silicon battery are used, it is characterized in that, this backplane slurry is comprised of after mixing following compositions in weight percentage: silver-copper-clad is wrapped up in base metal 26wt%, coating silver 12wt% wherein, be wrapped by thing copper 88wt%, the particle diameter of silver-copper clad base metal<10 μ m; Silver powder 49wt%; Glass dust 11wt%; Organic carrier 14wt%.
Claims (3)
1. the backplane slurry that the full aluminium back surface field of crystal silicon battery is used, is characterized in that, this backplane slurry is comprised of after mixing following compositions in weight percentage: coat base metal 15~30wt%; Silver powder 40~60wt%; Glass dust 5~18wt%; Organic carrier 10~20wt%.
2. the backplane slurry of using by the full aluminium back surface field of crystal silicon battery claimed in claim 1 is characterized in that, coats base metal by coating and be wrapped by thing to consist of, and coating is tin or silver, is wrapped by thing and is a kind of in base metal; Coating is 10~40wt%, and being wrapped by thing is 60~90wt%.
3. the backplane slurry of using by the full aluminium back surface field of crystal silicon battery claimed in claim 2 is characterized in that, the particle diameter of coating base metal<10 μ m.
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CN2013100892593A CN103151097A (en) | 2013-03-05 | 2013-03-05 | Back electrode slurry applied to full-aluminum back field of crystalline silicon battery |
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CN2013100892593A CN103151097A (en) | 2013-03-05 | 2013-03-05 | Back electrode slurry applied to full-aluminum back field of crystalline silicon battery |
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CN2013100892593A Pending CN103151097A (en) | 2013-03-05 | 2013-03-05 | Back electrode slurry applied to full-aluminum back field of crystalline silicon battery |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103700428A (en) * | 2014-01-13 | 2014-04-02 | 常州时创能源科技有限公司 | Electroconduction slurry for silicon solar cell electrodes and preparation method thereof |
US10193005B2 (en) | 2015-02-02 | 2019-01-29 | Nantong T-Sun New Energy Co., Ltd. | All-aluminum back surface field aluminum paste for crystalline silicon solar cell and preparation method thereof |
CN110120274A (en) * | 2019-06-05 | 2019-08-13 | 苏州晶银新材料股份有限公司 | A kind of back electrode slurry of full Al-BSF and its preparation method and application |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101304050A (en) * | 2007-05-09 | 2008-11-12 | 东进世美肯株式会社 | Paste for electrode forming of solar cell |
CN102360628A (en) * | 2011-09-22 | 2012-02-22 | 山东省科学院新材料研究所 | Method for preparing silver paste used for back electrode of photovoltaic cell |
CN102810344A (en) * | 2012-08-03 | 2012-12-05 | 江苏欧耐尔新型材料有限公司 | Silver-plated copper containing paste for solar cell back electrode and method for preparing silver-plated copper containing paste |
-
2013
- 2013-03-05 CN CN2013100892593A patent/CN103151097A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101304050A (en) * | 2007-05-09 | 2008-11-12 | 东进世美肯株式会社 | Paste for electrode forming of solar cell |
CN102360628A (en) * | 2011-09-22 | 2012-02-22 | 山东省科学院新材料研究所 | Method for preparing silver paste used for back electrode of photovoltaic cell |
CN102810344A (en) * | 2012-08-03 | 2012-12-05 | 江苏欧耐尔新型材料有限公司 | Silver-plated copper containing paste for solar cell back electrode and method for preparing silver-plated copper containing paste |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103700428A (en) * | 2014-01-13 | 2014-04-02 | 常州时创能源科技有限公司 | Electroconduction slurry for silicon solar cell electrodes and preparation method thereof |
CN103700428B (en) * | 2014-01-13 | 2016-06-15 | 常州时创能源科技有限公司 | Silicon solar battery electrode electrocondution slurry and preparation method thereof |
US10193005B2 (en) | 2015-02-02 | 2019-01-29 | Nantong T-Sun New Energy Co., Ltd. | All-aluminum back surface field aluminum paste for crystalline silicon solar cell and preparation method thereof |
CN110120274A (en) * | 2019-06-05 | 2019-08-13 | 苏州晶银新材料股份有限公司 | A kind of back electrode slurry of full Al-BSF and its preparation method and application |
CN110120274B (en) * | 2019-06-05 | 2021-07-09 | 苏州晶银新材料股份有限公司 | Back electrode slurry of all-aluminum back surface field and preparation method and application thereof |
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Application publication date: 20130612 |