CN103149755A - Thin film transistor liquid crystal display device and repairing method thereof - Google Patents
Thin film transistor liquid crystal display device and repairing method thereof Download PDFInfo
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- CN103149755A CN103149755A CN2011104015657A CN201110401565A CN103149755A CN 103149755 A CN103149755 A CN 103149755A CN 2011104015657 A CN2011104015657 A CN 2011104015657A CN 201110401565 A CN201110401565 A CN 201110401565A CN 103149755 A CN103149755 A CN 103149755A
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Abstract
The invention discloses a thin film transistor liquid crystal display device and a repairing method thereof. A repairing mark is arranged on a gate line of the device; the repairing mark is corresponding to an overlapped part of a drain and a gate, or corresponding to a non-transmitting area of a pixel electrode; and when the repairing mark is corresponding to the non-transmitting area of the pixel electrode, a shading structure is arranged between a gate isolation layer and a passivation layer corresponding to the repairing mark. During the process of repairing a display device light spot, under the condition that the repairing mark is corresponding to the overlapped part of the drain and the gate, the position of the repairing point can be exactly judged, so that the short circuit phenomenon between the gate line and a source electrode can be avoided, and the repairing success rate can be improved; and under the condition that the repairing mark is corresponding to the non-transmitting area of the pixel electrode, the light leakage phenomenon at the edge of the pixel can be avoided, because the shading structure is arranged between the gate isolation layer and the passivation layer corresponding to the repairing mark, the light leakage phenomenon does not occur at the repairing mark, and the repairing success rate can be improved.
Description
Technical field
The invention belongs to field of liquid crystal display, relate in particular to a kind of thin-film transistor LCD device and restorative procedure thereof.
Background technology
Making thin-film transistor LCD device (TFT-LCD, Thin Film Transistor-Liquid Crystal Display) in technological process, due to problems such as the quality of quality of forming film, the cleanliness factor of environment, the design of installing part itself and equipment itself, inevitably can produce impurity particle, the film problem such as come off, so cause picture element signal can not driven, the problem such as pixel defective.These problems occur at any point of viewing area, all can cause the display quality of thin-film transistor LCD device greatly to reduce.Existing settling mode is generally after making liquid crystal cell and adding electrical testing, and fleck defect is broken into dim spot with the laser preparing mode.
Concrete principle is, with gate line and pixel electrode short circuit, make the pixel electrode most of the time be in negative voltage, form the larger voltage difference of absolute value with respect to the common electrode voltage on color membrane substrates, thereby make liquid crystal be in all the time rotation status, thin-film transistor LCD device is shown as dim spot to reach the purpose of repairing bright spot.But, in liquid crystal indicator, the existence of black matrix" is arranged due to color membrane substrates one side, so laser bonding gate line and pixel electrode can only weld from thin-film transistor array base-plate one side, generally comprise dual mode: a, protrude the metal at position by laser bonding gate line and drain electrode, make gate line and drain electrode protrude the short circuit metal at position, finally realize the short circuit of gate line and pixel electrode; B, directly by laser bonding pixel electrode and gate line metal, finally realize the short circuit of gate line and pixel electrode.
With reference to figure 1 and Fig. 2, Fig. 1 is the front elevation of thin-film transistor LCD device thin-film transistor array base-plate, Fig. 2 is the thin-film transistor array base-plate rear view, in figure, data line D1, D2 and gate lines G 1, G2 surround a pixel, in a pixel, pixel electrode 3 are arranged, and are provided with the common line C of U-shaped in a pixel, stain 4 and 5 in two zones that dotted line 601 and 602 encloses is respectively the laser repairing point, includes drain electrode 1 and source electrode 2 in 601.Can adopt following dual mode, a when repairing bright spot: in 601 zones, laser bonding reparation point 4 makes gate lines G 2 short circuits of the overlapping position of drain electrode 1 and grid and vicinity, to reach the reparation purpose; B: the laser bonding 602 interior reparation points 5 in zone make gate lines G 1 short circuit of pixel electrode 3 and vicinity, to reach the reparation purpose.
But the method for existing reparation thin film transistor liquid crystal display device bright spot all the phenomenon of repairing failure can occur, and under some particular cases, the probability of repairing failure is larger, and the reparation success ratio is lower.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of thin-film transistor LCD device and restorative procedure thereof, repair the lower problem of success ratio to solve existing thin-film transistor LCD device.
This thin-film transistor LCD device comprises:
Substrate, gate line, common line, gate insulator, silicon island, data line, source electrode, drain electrode, passivation layer and pixel electrode, described pixel electrode comprises the light tight district of photic zone and the pixel electrode of pixel electrode, be provided with the reparation mark on described gate line, described reparation mark is corresponding to drain electrode and the overlapping position of grid or corresponding to the light tight district of pixel electrode;
When described reparation mark during corresponding to the light tight district of pixel electrode, corresponding to comprising light-shielding structure between the gate insulator of described reparation mark and passivation layer.
Preferably, corresponding to drain electrode during with the overlapping position of grid, described reparation mark has along the inside recessed reparation marker graphic of gate line when described reparation mark.
Preferably, corresponding to drain electrode during with the overlapping position of grid, described reparation mark has along the outwardly reparation marker graphic of gate line when described reparation mark.
Preferably, on described common line, the position corresponding with described reparation marker graphic has along figure recessed in common alignment.
Preferably, during corresponding to the light tight district of pixel electrode, described reparation mark has the reparation marker graphic that penetrates described gate line when described reparation mark.
Preferably, the making material of described light-shielding structure is identical with the making material of data line, and described light-shielding structure and data line, source electrode, drain electrode form in same photoetching process simultaneously.
Preferably, the making material of described light-shielding structure is identical with the making material of silicon island, and described light-shielding structure and silicon island form in same photoetching process.
Preferably, described reparation is labeled as circular reparation mark.
Preferably, described reparation is labeled as the reparation mark of rectangle.
The restorative procedure of the described thin-film transistor LCD device of a kind of above-mentioned any one, it is characterized in that, the position that the described reparation mark of laser bonding indicates is electrically connected to the light tight district of the overlapping position of described gate line and described drain electrode and grid or pixel electrode.Be provided with the reparation mark on gate line due to thin-film transistor LCD device provided by the present invention, and described reparation mark is corresponding to drain electrode and the overlapping position of grid or corresponding to the light tight district of pixel electrode; When described reparation mark during corresponding to the light tight district of pixel electrode, corresponding to comprising light-shielding structure between the gate insulator of described reparation mark and passivation layer.
As seen, in the situation that described reparation mark corresponding to the overlapping position of drain electrode and grid, in the process of repairing the thin-film transistor LCD device bright spot, can accurately judge the position of repairing point, to avoid the generation of short circuit phenomenon between gate line and source electrode, improve and repair success ratio; In the situation that described reparation mark is corresponding to the light tight district of pixel electrode, in the process of repairing the thin-film transistor LCD device bright spot, can avoid the generation of pixel edge light leakage phenomena, and due to corresponding to comprising light-shielding structure between the gate insulator of described reparation mark and passivation layer, so described reparation mark the situation of light leak can not occur, and then improve and repair success ratio.
Description of drawings
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, the below will do to introduce simply to the accompanying drawing of required use in embodiment or description of the Prior Art, apparently, accompanying drawing in the following describes is some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is that existing thin-film transistor LCD device is faced structural representation;
Fig. 2 is existing thin-film transistor LCD device back of the body TV structure schematic diagram;
Fig. 3 is the structural representation of existing thin-film transistor LCD device structure drain electrode after the allowed band bias internal;
Fig. 4 is the back of the body TV structure schematic diagram of a kind of thin-film transistor LCD device provided by the present invention;
Fig. 5 is the local back TV structure schematic diagram of another kind of thin-film transistor LCD device provided by the present invention;
Fig. 6 is the back of the body TV structure schematic diagram of another thin-film transistor LCD device provided by the present invention;
Fig. 7 is the back of the body TV structure schematic diagram of another thin-film transistor LCD device provided by the present invention.
Embodiment
For the purpose, technical scheme and the advantage that make the embodiment of the present invention clearer, below in conjunction with the accompanying drawing in the embodiment of the present invention, technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment in the present invention, those of ordinary skills belong to the scope of protection of the invention not making the every other embodiment that obtains under the creative work prerequisite.
Just as stated in the Background Art, the method for existing reparation thin-film transistor LCD device bright spot all the phenomenon of repairing failure can occur, and under some particular cases, the probability of repairing failure is larger, and the reparation success ratio is lower.
The inventor finds after deliberation, for method a, as shown in Figure 3,1 be offset with respect to gate lines G 2 in allowed band if drain, back of the body apparent time, the overlapping position of drain electrode 1 and grid is blocked by gate lines G 2, can't judge the position of source electrode 2, during reparation, repairing some 4-1 may be overlapping with source electrode 2, thereby cause gate lines G 2 and source electrode 2 and all short circuits between 1 that drain, and the short circuit between gate lines G 2 and source electrode 2 is not wished to see, causes repairing failure; For method b, as shown in Figure 2, in the light tight district of pixel due to blocking by gate lines G 1, can't judge concrete reparation position, repair success ratio lower, if repair the marginal position that point 5 is positioned at the pixel photic zone, tend to occur the phenomenon generation of pixel edge light leak, cause repairing quality and descend, cause repairing failure, cause the time of production and the waste of cost.
The invention discloses a kind of thin-film transistor LCD device, comprising:
Substrate, gate line, common line, gate insulator, silicon island, data line, source electrode, drain electrode, passivation layer and pixel electrode, described pixel electrode comprise the light tight district of photic zone and the pixel electrode of pixel electrode, it is characterized in that:
Be provided with the reparation mark on described gate line, described reparation mark is corresponding to drain electrode and the overlapping position of grid or corresponding to the light tight district of pixel electrode;
When described reparation mark during corresponding to the light tight district of pixel electrode, corresponding to comprising light-shielding structure between the gate insulator of described reparation mark and passivation layer.
Can be found out by such scheme, be provided with the reparation mark on the gate line due to thin-film transistor LCD device provided by the present invention, and described reparation mark is corresponding to drain electrode and the overlapping position of grid or corresponding to the light tight district of pixel electrode; In the situation of described reparation mark corresponding to the light tight district of pixel electrode, corresponding to comprising light-shielding structure between the gate insulator of described reparation mark and passivation layer.
So, in the situation that described reparation mark corresponding to the overlapping position of drain electrode and grid, in the process of repairing the thin-film transistor LCD device bright spot, can accurately judge the position of repairing point, to avoid the generation of short circuit phenomenon between gate line and source electrode, improve and repair success ratio; In the situation that described reparation mark is corresponding to the light tight district of pixel electrode, in the process of repairing the thin-film transistor LCD device bright spot, can avoid the generation of pixel edge light leakage phenomena, and due to corresponding to comprising light-shielding structure between the gate insulator of described reparation mark and passivation layer, so described reparation mark the situation of light leak can not occur, and then improve and repair success ratio.
It is more than the application's core concept, below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Based on the embodiment in the present invention, those of ordinary skills belong to the scope of protection of the invention not making the every other embodiment that obtains under the creative work prerequisite.
A lot of details have been set forth in the following description so that fully understand the present invention, but the present invention can also adopt other to be different from alternate manner described here and implement, those skilled in the art can be in the situation that do similar popularization without prejudice to intension of the present invention, so the present invention is not subjected to the restriction of following public specific embodiment.
Embodiment one:
The present embodiment discloses a kind of thin-film transistor LCD device, comprising:
Substrate, gate line, common line, gate insulator, silicon island, data line, source electrode, drain electrode, passivation layer and pixel electrode, described pixel electrode comprises the light tight district of photic zone and the pixel electrode of pixel electrode, be provided with the reparation mark on described gate line, described reparation mark is corresponding to the overlapping position of drain electrode and grid.
The concrete setting as shown in Figure 4:
Substrate (not shown), described substrate are glass substrate or the substrate of other materials.
Concrete, described common line C11 is U-shaped at each in its corresponding pixel region, and pass through the first metal layer conducting on the direction parallel with gate lines G 11 or G12, be provided with grid on described gate line, and be provided with on described gate lines G 12 and repair mark X, described reparation mark has along the inside reparation marker graphic of recessed rectangle of gate lines G 12.
Gate insulator (not shown), described gate insulator are arranged on the first metal layer surface, are provided with the silicon island (not shown) on the gate insulator surface that is positioned at above the grid of described gate line.
The second metal level, described the second metal level is arranged on the gate insulator surface, and be provided with data line L11 and L12, source S 11 and drain D 11 in described the second metal level, described source S 11 and data line L11 are an one-piece construction, overlapping part and the source S 11 of described drain D 11 and grid all is arranged on the surface, silicon island, and described silicon island has consisted of TFT (Thin Film Transistor together with grid, source S 11, drain D 11, thin film transistor (TFT)), many data lines and many gate lines are determined a plurality of pixel regions.
The passivation layer (not shown), described passivation layer is arranged on the second layer on surface of metal, and is provided with contact hole in described passivation layer.
The 3rd metal level, described the 3rd metal level is arranged on passivation layer surface, be preferably transparent indium tin oxide layer, and be provided with pixel electrode P11 in described the 3rd metal level, described pixel electrode is electrically connected to drain D 11 by contact hole, in addition, the part of described pixel electrode P11 is positioned at photic zone, the photic zone that is called pixel electrode, another part of described pixel electrode P11 is positioned at light tight district, the light tight district that is called pixel electrode, the light tight district of pixel electrode of the present invention specifically refer to pixel electrode P11 and gate lines G 11 overlapping zone.
Concrete, described reparation mark X is corresponding to the overlapping position of drain D 11 and grid, reparation marker graphic with rectangle, can also have circle or other can play the reparation marker graphic of marked effect, need to prove, the specification of described reparation mark X needs moderate, can not too littlely make operating personnel be difficult for identification, more can not affect too greatly the display effect of liquid crystal indicator integral body.
More specifically, described reparation mark X has along the inside recessed reparation marker graphic (as shown in Figure 4) of gate lines G 12 or along the outwardly reparation marker graphic of gate lines G 12.
As shown in Figure 5, in the situation that described reparation mark X-1 is corresponding to the overlapping position of drain D 11 and grid and have along the outwardly reparation marker graphic of gate lines G 12, the position corresponding with described reparation marker graphic is provided with the inside recessed figure along common line C11 on described common line C11, to prevent described gate lines G 12 and common line C11 conducting.
Be provided with the reparation mark on gate line due to thin-film transistor LCD device provided by the present invention, and described reparation mark is corresponding to the overlapping position of drain electrode and grid, so, in the process of repairing the thin-film transistor LCD device bright spot, can accurately judge the position of repairing point, to avoid the generation of short circuit phenomenon between gate line and source electrode, improve and repair success ratio.
Embodiment two:
The present embodiment and embodiment one difference be, described reparation mark is corresponding to the light tight district of pixel electrode, and corresponding to comprising light-shielding structure between the gate insulator of described reparation mark and passivation layer.
as shown in Figure 6, Fig. 6-a is vertical view, repair mark X1 corresponding to the light tight district of pixel electrode P11, and described reparation mark X1 has the reparation marker graphic of the circle that penetrates described gate lines G 11, namely can utilize laser welding technology in the reparation mark, that gate lines G 11 is welded together with the light tight district of pixel electrode P11 in substrate one side, preferably can utilize laser welding technology in the reparation mark, that gate lines G 11 is welded together with the marginal position of pixel electrode P11 in substrate one side, described reparation marker graphic can also for rectangle or other can play the figure of marked effect, comprise the light-shielding structure (not shown) between corresponding to the gate insulator of described reparation mark X1 and passivation layer, Fig. 6-b is the sectional view along A-A ' line, shown in figure, substrate 11, be arranged on the lip-deep gate lines G 11 of substrate 11, described gate lines G 11 is repaired mark X1 and is divided into two parts, be arranged on the lip-deep gate insulator 12 of gate lines G 11 and substrate 11, be arranged on gate insulator 12 surface upper and corresponding to the light-shielding structure Y of described reparation mark X1, be arranged on the lip-deep passivation layer 13 of light-shielding structure Y and gate insulator 12, be arranged on the light tight district of the lip-deep pixel electrode P11 of passivation layer 13.
Need to prove, the making material of described light-shielding structure is identical with the making material of data line, and described light-shielding structure and data line, source electrode, drain electrode form in same photoetching process simultaneously, perhaps the making material of described light-shielding structure is identical with the making material of silicon island, and described light-shielding structure and silicon island form in same photoetching process, perhaps described light-shielding structure is that data line is made material and the silicon island makes the stack of material, and forms in the Twi-lithography process through the described data line of formation and silicon island.
Be provided with on gate lines G 11 due to thin-film transistor LCD device provided by the present invention and repair mark X1, and described reparation mark X1 is corresponding to the light tight district of pixel electrode P11, corresponding to comprising light-shielding structure Y between the gate insulator 12 of described reparation mark X1 and passivation layer 13.
So, if bright spot appears in this pixel of thin-film transistor LCD device, in the process of repairing bright spot, can avoid the generation of this pixel edge light leakage phenomena, and due to corresponding to comprising light-shielding structure Y between the gate insulator 12 of described reparation mark X1 and passivation layer 13, so described reparation mark X1 place the situation of light leak can not occur, and then improve and repair success ratio.
In addition, because light-shielding structure Y and data line or silicon island form in same photoetching process, so the formation of light-shielding structure Y only need change photoetching process mask plate structure used, for making liquid crystal indicator itself, can't increase any additional step.
Embodiment three:
The present embodiment and above-described embodiment difference are, as shown in Figure 7, the disclosed liquid crystal indicator of the present embodiment comprises that first repairs mark X11 and second and repair mark X12, and repairs between the gate insulator of mark X12 and passivation layer corresponding to described second and comprise light-shielding structure.
Described the first reparation mark X11 is identical with the mark of reparation described in embodiment one X, and described reparation mark X12 is identical with the mark of reparation described in embodiment two X1.
As seen, in the process of repairing the thin-film transistor LCD device bright spot, both can accurately judge the position of repairing point, to avoid the generation of short circuit phenomenon between gate lines G 12 and source S 11, improve to repair success ratio, can avoid again the generation of pixel edge light leakage phenomena, and comprise light-shielding structure owing to repairing between the gate insulator of mark X12 and passivation layer corresponding to described second, the situation of light leak can not occur so described second repairs mark X12 place, and then improve the reparation success ratio.
So, the described liquid crystal indicator of the present embodiment is in the process of repairing bright spot, if because of some unpredictable factor, when utilizing a kind of method the problem of repairing failure to occur (except the situation of gate line and source electrode short circuit), still can utilize another restorative procedure to repair bright spot, and overall reparation success ratio increase.
Embodiment four:
The present embodiment discloses the restorative procedure of the disclosed liquid crystal indicator bright spot of a kind of embodiment one, and the method comprises:
Liquid crystal indicator is added electrical testing, determine the pixel at bright spot place, as shown in Figure 4, the position that the described reparation mark of laser bonding X indicates, the position that described gate lines G 12 and described drain D 11 and grid is overlapping is welded together, make gate lines G 12 and drain D 11 short circuits, finally realize the short circuit of gate lines G 12 and pixel electrode P11.
Owing at first having determined to repair required welding position, so even the skews that drain D 11 occurs as shown in Figure 3 when laser bonding, the phenomenon that gate lines G 12 and source S 11 is welded together can not occur yet, improved and be welded into power.
The present embodiment also discloses the restorative procedure of the disclosed liquid crystal indicator bright spot of a kind of embodiment two, and the method comprises:
Liquid crystal indicator is added electrical testing, determine the pixel at bright spot place, as shown in Fig. 6-a, the position that the described reparation mark X1 of institute of laser bonding indicates, described gate lines G 11 is welded together with the light tight district of described pixel electrode P11, make gate lines G 11 and pixel electrode P11 short circuit.
Owing at first having determined to repair required welding position, so can be under the blocking of gate lines G 11 position in definite pixel electrode P11 light tight district, make solder joint away from the photic zone of pixel electrode P11, avoided the generation of pixel edge light leakage phenomena, and due to corresponding to comprising light-shielding structure between the gate insulator of described reparation mark X1 and passivation layer, so described reparation mark X1 place the situation of light leak can not occur, and then improve and repair success ratio.
The present embodiment discloses again the restorative procedure of the disclosed liquid crystal indicator bright spot of a kind of embodiment three, and the method comprises:
Liquid crystal indicator is added electrical testing, determine the pixel at bright spot place, as shown in Figure 7, laser bonding described first is repaired mark X11 or second and is repaired the position that mark X12 indicates, corresponding, the position that described gate lines G 12 and described drain D 11 and grid is overlapping is welded together, make gate lines G 12 and drain D 11 short circuits, finally realize the short circuit of gate lines G 12 and pixel electrode P11, or described gate lines G 11 is welded together with the light tight district of described pixel electrode P11, make gate lines G 11 and pixel electrode P11 short circuit.
As seen, in the process of repairing the thin-film transistor LCD device bright spot, both can accurately judge the position of repairing point, to avoid the generation of short circuit phenomenon between gate lines G 12 and source S 11, improve to repair success ratio, can avoid again the generation of pixel edge light leakage phenomena, and comprise light-shielding structure owing to repairing between the gate insulator of mark X12 and passivation layer corresponding to described second, the situation of light leak can not occur so described second repairs mark X12 place, and then improve the reparation success ratio.
So, the described liquid crystal indicator of the present embodiment is in the process of repairing bright spot, if because of some unpredictable factor, when utilizing a kind of method the problem of repairing failure to occur (except the situation of gate line and source electrode short circuit), still can utilize another restorative procedure to repair bright spot, and overall reparation success ratio increase.
Embodiment five:
The present embodiment discloses the method for making of the thin-film transistor LCD device array substrate that a kind of above-described embodiment provides, and this method for making comprises:
Step S1, provide substrate, form the first metal layer on described substrate surface, and the first metal layer is carried out etching, form gate line and common line.
Concrete, described substrate is glass substrate or the substrate of other materials.
Formation gate line and common line specifically comprise on described substrate surface:
Adopt the plasma sputtering mode to form the first metal layer on described substrate surface, namely at first described substrate is put into reaction chamber, energetic particle hits has highly purified target material solid plate, by the physical process knock-on atom, these are passed vacuum by knocking-on atom, be deposited at last substrate surface, obtain the first metal layer.But the formation of the first metal layer is not limited in the plasma sputtering mode, can also utilize other physical vapor deposition mode to form, and is not described in detail at this.And then the first metal layer is carried out photoetching, i.e. spin coating photoresist on described the first metal layer, form photoresist layer, the mask that utilization has gate line and common line pattern exposes, form gate line and common line pattern on photoresist layer, after developing, form gate line and common line graph on photoresist layer, take photoresist layer with gate line and common line graph as mask, obtain gate line and common line through techniques such as dry etching or wet etchings, described gate line is provided with grid.
Need to prove, " gate line and common line pattern " described in the present embodiment is gate line and the common line pattern in the lip-deep two dimension of photoresist layer, and area of the pattern is only limited to the photoresist layer surface and not to surperficial downward-extension, does not have three-dimensional shape; Described " gate line and common line graph " for to have the three-dimensional picture of three-dimensional shape, the thickness of this figure is the thickness of photoresist layer.
Step S2, form gate insulator on gate line, common line and substrate surface, and form amorphous silicon layer on the gate insulator surface, described amorphous silicon layer is carried out etching, form the silicon island.
Concrete, adopt the chemical vapor deposition mode to form gate insulator on described gate line, common line and substrate surface, the substrate that namely at first the surface is provided with gate line and common line is put into reaction chamber, gas precursors is transferred to substrate surface and carries out suction-operated and reaction, then the accessory substance with reaction removes, and obtains gate insulator.But the formation of gate insulator is not limited in the chemical vapor deposition mode, can also utilize other the modes such as physical vapor deposition to form, and is not described in detail at this.Described gate insulator is SiN
xLayer, and form amorphous silicon layer by identical technique on the gate insulator surface, described amorphous silicon layer is carried out photoetching, form the silicon island in the position corresponding with grid.
Step S3, form the second metal level on silicon island and gate insulator surface, and the second metal level is carried out etching, form data line, source electrode and drain electrode.
Concrete, adopt physical vapor deposition process to form the second metal level on described silicon island and gate insulator surface, afterwards, adopt photoetching process to form data line, source electrode and drain electrode in described the second metal level, described data line and source electrode are an one-piece construction.
Step S4, form passivation layer on described data line, source electrode, drain and gate surface of insulating layer, described passivation layer is carried out etching, form contact hole.
Concrete, adopt chemical vapor deposition method to form passivation layer on described data line, common line and gate insulator surface, afterwards, adopt photoetching process to form contact hole in described passivation layer, described contact hole is positioned at the passivation layer of drain electrode top.
Step S5, form the 3rd metal level on described passivation layer surface, described the 3rd metal level is carried out etching, form pixel electrode.
Concrete, adopt physical vapor deposition process to form the 3rd metal level on described passivation layer surface, described the 3rd metal level is transparent metal layer, make material and be preferably tin indium oxide, afterwards, adopt photoetching process to form pixel electrode on the 3rd metal level, described pixel electrode is electrically connected to by contact hole and drain electrode.
need to prove, if what produce is the disclosed thin-film transistor LCD device of embodiment one, on described gate line, the position corresponding to drain electrode and grid overlapping position is provided with the reparation mark, if what produce is the disclosed thin-film transistor LCD device of embodiment two, on described gate line, the position corresponding to the light tight district of pixel electrode is provided with the reparation mark, and corresponding to comprising light-shielding structure between the gate insulator of described reparation mark and passivation layer, described light-shielding structure and data line or silicon island form in same photoetching process, if what produce is the disclosed thin-film transistor LCD device of embodiment three, be provided with first corresponding to the position at drain electrode and grid overlapping position on described gate line and repair mark, and be provided with second corresponding to the position in the light tight district of pixel electrode on described gate line and repair mark, and repair between the gate insulator of mark and passivation layer corresponding to described second and comprise light-shielding structure, described light-shielding structure and data line or silicon island form in same photoetching process, or described light-shielding structure is through forming in the Twi-lithography process that forms data line and silicon island.
As seen, the production of the disclosed thin-film transistor LCD device of arbitrary embodiment can not increase any additional step, namely can not increase production cost.
In this instructions, various piece adopts the mode of going forward one by one to describe, and what each part stressed is and the difference of other parts that between various piece, identical similar part is mutually referring to getting final product.
To the above-mentioned explanation of the disclosed embodiments, make this area professional and technical personnel can realize or use the present invention.Multiple modification to these embodiment will be apparent concerning those skilled in the art, and General Principle as defined herein can be in the situation that do not break away from the spirit or scope of the present invention, realization in other embodiments.Therefore, the present invention will can not be restricted to embodiment illustrated herein, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (10)
1. thin-film transistor LCD device, comprise: substrate, gate line, common line, gate insulator, silicon island, data line, source electrode, drain electrode, passivation layer and pixel electrode, described pixel electrode comprises the light tight district of photic zone and the pixel electrode of pixel electrode, it is characterized in that:
Be provided with the reparation mark on described gate line, described reparation mark is corresponding to drain electrode and the overlapping position of grid or corresponding to the light tight district of pixel electrode;
When described reparation mark during corresponding to the light tight district of pixel electrode, corresponding to comprising light-shielding structure between the gate insulator of described reparation mark and passivation layer.
2. thin-film transistor LCD device according to claim 1, is characterized in that, when described reparation mark during corresponding to the overlapping position of drain electrode and grid, described reparation mark has along the inside recessed reparation marker graphic of gate line.
3. thin-film transistor LCD device according to claim 1, is characterized in that, during corresponding to the overlapping position of drain electrode and grid, described reparation mark has along the outwardly reparation marker graphic of gate line when described reparation mark.
4. thin-film transistor LCD device according to claim 3, is characterized in that, position corresponding with described reparation marker graphic on described common line has along figure recessed in common alignment.
5. thin-film transistor LCD device according to claim 1, is characterized in that, during corresponding to the light tight district of pixel electrode, described reparation mark has the reparation marker graphic that penetrates described gate line when described reparation mark.
6. thin-film transistor LCD device according to claim 5, is characterized in that, the making material of described light-shielding structure is identical with the making material of data line, and described light-shielding structure and data line, source electrode, drain electrode form in same photoetching process simultaneously.
7. thin-film transistor LCD device according to claim 5, is characterized in that, the making material of described light-shielding structure is identical with the making material of silicon island, and described light-shielding structure and silicon island form in same photoetching process.
8. thin-film transistor LCD device according to claim 1, is characterized in that, described reparation is labeled as circular reparation mark.
9. thin-film transistor LCD device according to claim 1, is characterized in that, described reparation is labeled as the reparation mark of rectangle.
10. the restorative procedure of the described thin-film transistor LCD device of claim 1-9 any one, it is characterized in that, the position that the described reparation mark of laser bonding indicates is electrically connected to the light tight district of the overlapping position of described gate line and described drain electrode and grid or pixel electrode.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110401565.7A CN103149755B (en) | 2011-12-06 | 2011-12-06 | A kind of thin-film transistor LCD device and restorative procedure thereof |
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| CN201110401565.7A CN103149755B (en) | 2011-12-06 | 2011-12-06 | A kind of thin-film transistor LCD device and restorative procedure thereof |
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| CN103293794A (en) * | 2012-02-22 | 2013-09-11 | 上海中航光电子有限公司 | TFT-LCD (thin film transistor-liquid crystal display) device and repair method thereof |
| CN105745698A (en) * | 2013-11-14 | 2016-07-06 | 堺显示器制品株式会社 | Circuit board and display device |
| WO2018033012A1 (en) * | 2016-08-18 | 2018-02-22 | 京东方科技集团股份有限公司 | Cell substrate, liquid crystal display panel and spot removal method therefor |
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| CN109613772A (en) * | 2019-01-03 | 2019-04-12 | 京东方科技集团股份有限公司 | Display base plate and its manufacturing method, restorative procedure, display device |
| CN110620105A (en) * | 2019-10-22 | 2019-12-27 | 成都中电熊猫显示科技有限公司 | Array substrate, manufacturing method thereof and detection method of pattern deviation of array substrate |
| CN111048528A (en) * | 2019-12-19 | 2020-04-21 | 信利(仁寿)高端显示科技有限公司 | Structure and method for repairing thin film transistor array substrate electrostatic shock |
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| CN103293794A (en) * | 2012-02-22 | 2013-09-11 | 上海中航光电子有限公司 | TFT-LCD (thin film transistor-liquid crystal display) device and repair method thereof |
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| CN111048528A (en) * | 2019-12-19 | 2020-04-21 | 信利(仁寿)高端显示科技有限公司 | Structure and method for repairing thin film transistor array substrate electrostatic shock |
| CN112599694A (en) * | 2020-12-10 | 2021-04-02 | 深圳市华星光电半导体显示技术有限公司 | Display panel and display device |
| CN114815425A (en) * | 2022-05-07 | 2022-07-29 | Tcl华星光电技术有限公司 | Display panel and manufacturing method thereof |
| CN114815425B (en) * | 2022-05-07 | 2023-11-28 | Tcl华星光电技术有限公司 | Display panel and manufacturing method thereof |
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