CN103137062A - Organic light emitting diode pixel circuit and driving circuit and application thereof - Google Patents

Organic light emitting diode pixel circuit and driving circuit and application thereof Download PDF

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Publication number
CN103137062A
CN103137062A CN201110379600XA CN201110379600A CN103137062A CN 103137062 A CN103137062 A CN 103137062A CN 201110379600X A CN201110379600X A CN 201110379600XA CN 201110379600 A CN201110379600 A CN 201110379600A CN 103137062 A CN103137062 A CN 103137062A
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China
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transistor
electric capacity
voltage
emitting diode
organic light
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王文俊
韩西容
廖文堆
黄志鸿
王宗裕
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LIANSHENG (CHINA) TECHNOLOGY CO LTD
Wintek Corp
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LIANSHENG (CHINA) TECHNOLOGY CO LTD
Wintek Corp
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Abstract

The invention provides an organic light emitting diode pixel circuit. By a circuit architecture (5T2C) provided with a proper operating waveform, current flowing through an organic light emitting diode cannot be changed by influence of current resistance voltage drop (IR Drop) on power voltage (Vdd) and cannot be different due to threshold voltage shift (Vth shift) of a thin film transistor for driving the organic light emitting diode. Therefore, the brightness uniformity of an organic light emitting diode display can be greatly improved.

Description

Organic light-emitting diode pixel circuit and driving circuit thereof and application
Technical field
The present invention relates to a kind of plane display technique, relate in particular to a kind of organic light-emitting diode pixel circuit and driving circuit thereof and application.
Background technology
Due to improving rapidly of MultiMedia Field, the technology of semiconductor element and display device also has tremendous progress thereupon.With regard to display, because active matrix organic LED (Active Matrix Organic Light Emitting Diode, AMOLED) displaying appliance has or not angle limitations, low manufacturing cost, high answer speed (being about more than hundred times of liquid crystal), power saving, autoluminescence, the direct drive that can be used in portable machine, operating temperature range is large and lightweight and can be with hardware device miniaturization and slimming etc. advantage to meet the characteristic requirements of multimedia era display.Therefore, active matrix organic LED display has great development potentiality, is expected to become next novel flat-panel screens from generation to generation, uses to replace liquid crystal display (liquid crystal display, LCD).
The active matrix organic LED display panel mainly contains two kinds of production methods at present, the first utilizes thin film transistor (TFT) (TFT) process technique of low temperature polycrystalline silicon (LTPS) to make, and another is that thin film transistor (TFT) (TFT) process technique of utilizing amorphous silicon (a-Si) is made.The optical cover process that wherein, need to compare multiple tracks due to the thin film transistor (TFT) process technique of low temperature polycrystalline silicon causes cost to rise.Therefore, the thin film transistor (TFT) process technique of low temperature polycrystalline silicon is mainly used on the panel of small-medium size at present, and the thin film transistor (TFT) process technique of amorphous silicon is mainly used on large-sized panel.
In general, adopt the thin film transistor (TFT) process technique made active matrix organic LED display panel out with low temperature polycrystalline silicon, the kenel of the thin film transistor (TFT) in its image element circuit can be P type or N-type, but because P type thin film transistor (TFT) conduction positive electricity is pressed with driving force preferably, so now mainly with selecting P type thin film transistor (TFT) to implement.Yet, select P type thin film transistor (TFT) to realize under the condition of organic light-emitting diode pixel circuit, flowing through the electric current of Organic Light Emitting Diode not only can be along with supply voltage (Vdd) be subject to the impact of current resistor voltage drop (IR Drop) and changes, but also can be along with different in order to the limit voltage drift (Vth shift) of the thin film transistor (TFT) that drives Organic Light Emitting Diode.Thus, will relatedly have influence on the brightness uniformity of organic light emitting diode display.
Summary of the invention
In view of this, an one exemplary embodiment of the present invention provides a kind of organic light-emitting diode pixel circuit, and it comprises: Organic Light Emitting Diode, the first to the 5th transistor, and first and second electric capacity.Wherein, Organic Light Emitting Diode is used to a glow phase, reacts on a drive current and luminous.The first transistor is used to a data write phase, reacts on one first sweep signal and transmits a data voltage.The first electric capacity is coupled between the first transistor and earthing potential, is used to described data write phase, stores described data voltage.Transistor seconds is coupled to a supply voltage, is used to described glow phase, the described drive current that generation is not affected by the critical voltage of described supply voltage and transistor seconds.
The 3rd strings of transistors is connected between transistor seconds and Organic Light Emitting Diode, is used to described glow phase, reacts on a luminous signal and transmits described drive current to Organic Light Emitting Diode.The second electric capacity is coupled between the first transistor and transistor seconds, be used to a store voltages stage, a charging voltage that reacts on one second sweep signal and store the limit voltage that is associated with transistor seconds, and described charging voltage will in described data write phase, react on the storage of described data voltage and change.The 4th transistor couples the 3rd transistor AND gate the second electric capacity, is used to an initial phase, react on one second sweep signal and collaborative the 3rd transistor with the first end voltage of initialization the second electric capacity.The 5th transistor is coupled between the second electric capacity and earthing potential, is used to described initial phase, reacts on described the second sweep signal and the second terminal voltage of initialization the second electric capacity.
In the present invention's one one exemplary embodiment, organic light-emitting diode pixel circuit successively enters described initial phase, described store voltages stage, described data write phase, and described glow phase.
In the present invention's one one exemplary embodiment, the first to the 5th transistor is all the P transistor npn npn.
Another one exemplary embodiment of the present invention provides a kind of organic LED display panel with aforementioned organic light-emitting diode pixel circuit of carrying.
In the present invention's one one exemplary embodiment, the organic LED display panel of carrying is to utilize the thin film transistor (TFT) process technique of low temperature polycrystalline silicon to make.
An one exemplary embodiment more of the present invention provides a kind of organic light emitting diode display with aforementioned organic LED display panel of putting forward.
Another one exemplary embodiment of the present invention provides a kind of framework under the organic light-emitting diode pixel circuit of carrying, do not include OLED, and the driving circuit of the Organic Light Emitting Diode that is formed by the first to the 5th transistor and first and second electric capacity.
Another one exemplary embodiment of the present invention provides a kind of OLED driver circuit, and it comprises: driver element, data storage cell, and voltage storage cell.Wherein, driver element is coupled between a supply voltage and an Organic Light Emitting Diode, and comprises driving transistors, is used to the drive current that a glow phase is controlled the Organic Light Emitting Diode of flowing through.The data receiver unit comprises the first electric capacity that is coupled to earthing potential, is used to a data write phase, receives and transmit data voltage to the first electric capacity.
Voltage storage cell is coupled between driver element and data receiver unit, and comprises the second electric capacity, is used to a store voltages stage, records a critical voltage of driving transistors.In described glow phase, driver element reacts on the critical voltage of described data voltage and driving transistors and produces the described drive current of the Organic Light Emitting Diode of flowing through, and described drive current is not subjected to the impact of the critical voltage of described supply voltage and driving transistors.
In an one exemplary embodiment of the present invention, the source electrode of driving transistors is coupled to described supply voltage, and driver element can also comprise: the light emitting control transistor, its grid is in order to receive a luminous signal, its source electrode couples the drain electrode of driving transistors, its drain electrode is coupled with the anode of OLED, and the negative electrode of Organic Light Emitting Diode is coupled to described earthing potential.
In an one exemplary embodiment of the present invention, data storage cell can also comprise: write transistor, its grid is in order to receive one first sweep signal, its source electrode is in order to receive described data voltage, its drain electrode couples the first end of the first electric capacity, and the second end of the first electric capacity is coupled to described earthing potential.
In an one exemplary embodiment of the present invention, the first end of the second electric capacity couples the first end that writes transistorized drain electrode and the first electric capacity, the second end of the second electric capacity couples the grid of driving transistors, and voltage storage cell can also comprise: first and second transmission transistor.The grid of the first transmission transistor is in order to receive one second sweep signal, the source electrode of the first transmission transistor couples drain electrode and the transistorized source electrode of light emitting control of driving transistors, and the drain electrode of the first transmission transistor couples the grid of driving transistors and the second end of the second electric capacity.The grid of the second transmission transistor is in order to receive described the second sweep signal, and the source electrode of the second transmission transistor couples the first end that writes transistorized drain electrode and first and second electric capacity, and the drain electrode of the second transmission transistor is coupled to described earthing potential.
In an one exemplary embodiment of the present invention, the first transmission transistor is used to an initial phase, react on described the second sweep signal and collaborative light emitting control transistor with the first end voltage of initialization the second electric capacity; And second transmission transistor be used to described initial phase, react on described the second sweep signal and the second terminal voltage of initialization the second electric capacity.
In an one exemplary embodiment of the present invention, driving transistors, light emitting control transistor, write transistor and first and second transmission transistor is all the P transistor npn npn.
In an one exemplary embodiment of the invention described above, OLED driver circuit can successively enter described initial phase, described store voltages stage, described data write phase and described glow phase, and described data voltage can be a negative voltage.
In an one exemplary embodiment of the invention described above, in described initial phase, only described the second sweep signal and described luminous signal activation; In the described store voltages stage, only described the second sweep signal activation; In described data write phase, only described the first sweep signal activation; And in described glow phase, only described luminous signal activation.
Based on above-mentioned, the invention provides a kind of organic light-emitting diode pixel circuit, and its circuit framework (5T2C) is under the suitable operation waveform of collocation, can be so that the electric current of the Organic Light Emitting Diode of flowing through can be along with supply voltage (Vdd) be subject to the impact of current resistor voltage drop (IR Drop) and change, nor can be along with different in order to the limit voltage drift (Vth shift) of the thin film transistor (TFT) that drives Organic Light Emitting Diode.Thus, can promote widely the brightness uniformity of applied organic light emitting diode display.
Will be appreciated that, above-mentioned general description and following embodiment are only exemplary and illustrative, and it can not limit the scope that institute of the present invention wish is advocated.
Description of drawings
Below appended graphic be the part of instructions of the present invention, shown example embodiment of the present invention, principle of the present invention is described together with the description of institute's accompanying drawing and instructions.
Fig. 1 is shown as the schematic diagram of the organic light-emitting diode pixel circuit 10 of the present invention's one one exemplary embodiment.
Fig. 2 is shown as the circuit diagram of the organic light-emitting diode pixel circuit 10 of Fig. 1.
Fig. 3 is shown as the operation waveform diagram of the organic light-emitting diode pixel circuit 10 of Fig. 1.
The organic light-emitting diode pixel circuit 10 that Fig. 4 A is shown as Fig. 1 is in the schematic diagram of initial phase P1.
The organic light-emitting diode pixel circuit 10 that Fig. 4 B is shown as Fig. 1 is in the schematic diagram of store voltages stage P2.
The organic light-emitting diode pixel circuit 10 that Fig. 4 C is shown as Fig. 1 is in the schematic diagram of data write phase P3.
The organic light-emitting diode pixel circuit 10 that Fig. 4 D is shown as Fig. 1 is in the schematic diagram of glow phase P4.
The main element symbol description:
10: organic light-emitting diode pixel circuit
101: Organic Light Emitting Diode
103: driving circuit
105: driver element
107: data storage cell
109: voltage storage cell
T1: the first transistor (writing transistor)
T2: transistor seconds (driving transistors)
T3: the 3rd transistor (light emitting control transistor)
T4: the 4th transistor (the first transmission transistor)
T5: the 5th transistor (the second transmission transistor)
C1: the first electric capacity
C2: the second electric capacity
Scan1: the first sweep signal
Scan2: the second sweep signal
Em: luminous signal
I OLED: drive current
-Vdata: data voltage
P1: organic light-emitting diode pixel circuit is in initial phase
P2: organic light-emitting diode pixel circuit is in the store voltages stage
P3: organic light-emitting diode pixel circuit is in the data write phase
P4: organic light-emitting diode pixel circuit is in glow phase
A, B: node
Embodiment
Now will in detail with reference to one exemplary embodiment of the present invention, the example of described one exemplary embodiment be described in the accompanying drawings.In addition, all possibility parts use the element/member of same numeral to represent identical or similar portions in graphic and embodiment.
Fig. 1 is shown as organic light-emitting diode pixel circuit (the Organic Light Emitting Diode pixel circuit of the present invention's one one exemplary embodiment, OLED pixel circuit) 10 schematic diagram, and Fig. 2 is shown as the circuit diagram of the organic light-emitting diode pixel circuit 10 of Fig. 1.Please merge with reference to Fig. 1 and Fig. 2, the organic light-emitting diode pixel circuit 10 of this one exemplary embodiment includes OLED (OLED) 101 and driving circuit (driving circuit) 103.Wherein, driving circuit 103 comprises driver element (driving unit) 105, data storage cell (data storage unit) 107, and voltage storage cell (voltage-memorizing unit) 109.
In this one exemplary embodiment, driver element 105 is coupled between supply voltage (power supply voltage) Vdd and Organic Light Emitting Diode 101, and comprise driving transistors (driving transistor) T2 (below rename as transistor seconds T2), be used to glow phase (emission phase), control drive current (driving current) I of the Organic Light Emitting Diode 101 of flowing through OLED
Data storage cell 107 comprises the first electric capacity (capacitor) C1 that is coupled to earthing potential, be used to data write phase (data-writing phase), receive and store data voltage (data voltage)-Vdata to the first capacitor C 1.Voltage storage cell 109 is coupled between driver element 105 and data storage cell 107, and comprise the second capacitor C 2, be used to the store voltages stage (voltage-memorizing phase), record critical voltage (threshold voltage, the V of transistor seconds T2 th(T2)).
In this one exemplary embodiment, driver element 105 is in glow phase, reacts on the critical voltage (V of data voltage-Vdata and transistor seconds T2 th(T2)) produce the drive current I of the Organic Light Emitting Diode 101 of flowing through OLED, and this drive current I OLEDBe not subjected to the critical voltage (V of supply voltage Vdd and transistor seconds T2 th(T2)) impact.In other words, drive current I OLEDCritical voltage (V with supply voltage Vdd and transistor seconds T2 th(T2) irrelevant.
In addition, driver element 105 also comprises light emitting control transistor (emission control transistor) T3 (below rename as the 3rd transistor T 3); Data storage cell 107 also comprises and writes transistor (writing transistor) T1 (below rename as the first transistor T1); And voltage storage cell 109 also comprises first and second transmission transistor (transmission transistor) T4, T5 (following the 4th and the 5th transistor T 4, the T5 of renaming as respectively).
In this one exemplary embodiment, first to the 5th transistor T 1~T5 all can be P transistor npn npn, for example P type thin film transistor (TFT) (thin-film-transistor, TFT).Base this, use organic light-emitting diode pixel circuit 10 and can utilize thin film transistor (TFT) (TFT) process technique of low temperature polycrystalline silicon (LTPS) to be made in wherein organic LED display panel (OLED display panel).
In addition, on the circuit structure of organic light-emitting diode pixel circuit 10, the grid of the first transistor T1 (gate) is in order to receive the first sweep signal Scan1, and the source electrode of the first transistor T1 (source) is in order to receive data voltage-Vdata (it is a negative voltage (negative voltage)).The first end of the first capacitor C 1 couples the drain electrode (drain) of the first transistor T1, and the second end of the first capacitor C 1 is coupled to earthing potential (ground potential).
The first end of the second capacitor C 2 couples the drain electrode of the first transistor T1 and the first end of the first capacitor C 1.The grid of transistor seconds T2 couples the second end of the second capacitor C 2, and the source electrode of transistor seconds T2 is coupled to supply voltage Vdd.The grid of the 3rd transistor T 3 is in order to receive luminous signal (emission signal) Em, and the source electrode of the 3rd transistor T 3 couples the drain electrode of transistor seconds T2.The anode of Organic Light Emitting Diode 101 (anode) couples the drain electrode of the 3rd transistor T 3, and the negative electrode of Organic Light Emitting Diode 101 (cathode) is coupled to earthing potential.
The grid of the 4th transistor T 4 is in order to receive the second sweep signal Scan2, the source electrode of the 4th transistor T 4 couples the drain electrode of transistor seconds T2 and the source electrode of the 3rd transistor T 3, and the drain electrode of the 4th transistor T 4 couples the grid of transistor seconds T2 and the second end of the second capacitor C 2.The grid of the 5th transistor T 5 is in order to receiving the second sweep signal Scan2, and the source electrode of the 5th transistor T 5 couples the first end of the drain electrode of the first transistor T1 and first and second capacitor C 1, C2, and the drain electrode of the 5th transistor T 5 is coupled to earthing potential.
Moreover, in the operation of organic light-emitting diode pixel circuit 10, it can successively enter initial phase (initialization phase), store voltages stage, data write phase, and glow phase, for example P1~P4 shown in Figure 3 out of the ordinary.Can clearly be seen that in initial phase P1, the second sweep signal Scan2 and luminous signal Em meeting activation is only arranged from Fig. 3.In store voltages stage P2, the second sweep signal Scan2 meeting activation is only arranged.In data write phase P3, the first sweep signal Scan1 meeting activation is only arranged.In glow phase P4, luminous signal Em meeting activation is only arranged.
In what this be worth to explain be, because the kenel of first to the 5th transistor T 1~T5 in organic light-emitting diode pixel circuit 10 is the P type, so as can be known be that first to the 5th transistor T 1~T5 is low level activation (low active).Thus, before for the statement of the first sweep signal Scan1, the second sweep signal Scan2 and luminous signal Em meeting activation, represented namely that the first sweep signal Scan1, the second sweep signal Scan2 and luminous signal Em were in low level.
At first, when organic light-emitting diode pixel circuit 10 is in initial phase P1, due to the second sweep signal Scan2 and luminous signal Em meeting activation only being arranged, so as shown in Fig. 4 A, first and second transistor T 1, T2 can be closed (turned-off, beat the X place), and the 3rd to the 5th transistor T 3~T5 can be switched on (turned-on is not beaten X).Base this, the 4th transistor T 4 can react on the second sweep signal Scan2 and collaborative the 3rd transistor T 3 with the first end voltage of initialization the second capacitor C 2 (that is, the voltage essence at node A place is earthing potential).In addition, the 5th transistor T 5 can react on the second sweep signal Scan2 and the first end voltage of the second terminal voltage of initialization the second capacitor C 2 and the first capacitor C 1 (that is, the voltage essence at Node B place is earthing potential) equally.
And then, when organic light-emitting diode pixel circuit 10 is in store voltages stage P2, due to the second sweep signal Scan2 meeting activation only being arranged, so as shown in Figure 4 B, the first and the 3rd transistor T 1, T3 can be closed (beat X place), and the second, the 4th and the 5th transistor T 2, T3, T4 can be switched on (not beaten X).The base this, the second capacitor C 2 can react on the second sweep signal Scan2 and store/store the limit voltage (V that is associated with transistor seconds T2 th(T2)) charging voltage (that is, Vdd-V th(T2)).In other words, when organic light-emitting diode pixel circuit 10 was in store voltages stage P2, supply voltage Vdd can charge to the second capacitor C 2, used to make the second capacitor C 2 storages/storage charging voltage (Vdd-V th(T2)).
Subsequently, when organic light-emitting diode pixel circuit 10 is in data write phase P3, due to the first sweep signal Scan1 meeting activation only being arranged, so as shown in Fig. 4 C, first and second transistor T 1, T2 can be switched on (not beaten X), and the 3rd to the 5th transistor T 3~T5 can be closed (beat X place).The base this, the first transistor T1 can react on the first sweep signal Scan1 and transmit data voltage-Vdata.In addition, the first capacitor C 1 can be stored data voltage-Vdata according to this.
At data write phase P3, based on capacitance coupling effect (Capacitive coupling effect), the charging voltage (Vdd-V that the second capacitor C 2 is stored/stored in store voltages stage P2 th(T2)) can react on the storage of data voltage-Vdata and change.Also clear, react on the first capacitor C 1 in the cause of data write phase P3 storage data voltage-Vdata, this moment, the voltage of Node B can be considered data voltage-Vdata, and the voltage of node A (namely, the grid voltage of transistor seconds T2 (Vg)) will be subjected to the impact of the capacitance coupling effect of the second capacitor C 2, and from original (Vdd-V th(T2)) change to (Vdata * (C1/C1+C2)+Vdd-Vth (T2)).And this namely the second capacitor C 2 change at data write phase P3 the charging voltage (Vdd-V that it is stored/store in store voltages stage P2 th(T2)) reason.
At last, when organic light-emitting diode pixel circuit 10 is in glow phase P4, due to luminous signal Em meeting activation only being arranged, so as shown in Fig. 4 D, the second and the 3rd transistor T 2, T3 can be switched on (not beaten X), and the first, the 4th and the 5th transistor T 1, T4, T5 can be closed (beat X place).The base this, transistor seconds T2 will produce the critical voltage (V that is not subjected to supply voltage Vdd and transistor seconds T2 th(T2)) the drive current I of impact OLED
Clearer, at glow phase P4, the drive current I that transistor seconds T2 produces OLEDCan be expressed as equation 1:
I OLED = 1 2 K × ( Vsg - V th ( T 2 ) ) 2 - - - 1 ‾ ,
Wherein, K is the current constant that is associated with transistor seconds T2.
In addition, because the source voltage (Vs) of transistor seconds T2 is known with grid voltage (Vg), that is as follows:
Vs=Vdd; And
Vg=-Vdata×(C1/C1+C2)+Vdd-V th(T2)。
Therefore, if bring the source voltage (Vs) of known transistor seconds T2 into equation with grid voltage (Vg) 1, that is following equation 2:
I OLED = 1 2 K × [ Vdd - ( Vdd - V th ( T 2 ) - Vdata × C 1 C 1 + C 2 ) - V th ( T 2 ) ] 2 - - - 2 ‾ ,
Equation 2Can be reduced to further following equation 3:
I OLED = 1 2 K × ( Vdata × C 1 C 1 + c 2 ) 2 - - - 3 ‾ .
Hence one can see that, and transistor seconds T2 can produce the critical voltage (V that is not subjected to supply voltage Vdd and transistor seconds T2 in glow phase P4 th(T2)) the drive current I of impact OLED
On the other hand, at glow phase P4, the 3rd transistor T 3 that is serially connected with between transistor seconds T2 and Organic Light Emitting Diode 101 can react on luminous signal Em and transmit the critical voltage (V that is not subjected to supply voltage Vdd and transistor seconds T2 th(T2)) the drive current I of impact OLEDTo Organic Light Emitting Diode 101.Thus, Organic Light Emitting Diode 101 namely can react on the drive current I that transmits OLEDAnd it is luminous.
Accordingly as can be known, the circuit framework of the organic light-emitting diode pixel circuit 10 that above-mentioned one exemplary embodiment discloses is 5T2C (that is 5 thin film transistor (TFT)+2 electric capacity), if and the suitable operation waveform (as shown in Figure 3) of arranging in pairs or groups, can make the electric current I of the Organic Light Emitting Diode 101 of flowing through OLEDCan be along with supply voltage Vdd be subject to the impact of current resistor voltage drop (IR Drop) and change, nor can be along with different in order to the limit voltage drift (Vth shift) of the driving transistors T2 that drives Organic Light Emitting Diode 101.Thus, can promote widely the brightness performance of applied organic light emitting diode display.In addition, the organic light-emitting diode pixel circuit 10 of the above-mentioned one exemplary embodiment of any application is in wherein organic LED display panel and organic light emitting diode display thereof, all belong to the present invention the category wanting to ask for protection.
Although the present invention discloses as above with embodiment; but it is not to limit the present invention; any the technical staff in the technical field; without departing from the spirit and scope of the present invention; when doing suitable change and equal the replacement, therefore protection scope of the present invention should be as the criterion with the scope that the application's claim is defined.In addition, arbitrary embodiment of the present invention or application claim must not reached disclosed whole purposes or advantage or characteristics.In addition, summary part and title are only the use of auxiliary patent document search, are not to limit interest field of the present invention.

Claims (24)

1. an organic light-emitting diode pixel circuit, is characterized in that, comprising:
One Organic Light Emitting Diode is used to a glow phase, reacts on a drive current and luminous;
One the first transistor is used to a data write phase, reacts on one first sweep signal and transmits a data voltage;
One first electric capacity is coupled between this first transistor and an earthing potential, is used to this data write phase, stores this data voltage;
One transistor seconds is coupled to a supply voltage, is used to this glow phase, this drive current that generation is not affected by a critical voltage of this supply voltage and this transistor seconds;
One the 3rd transistor is serially connected with between this transistor seconds and this Organic Light Emitting Diode, is used to this glow phase, reacts on a luminous signal and transmits this drive current to this Organic Light Emitting Diode;
One second electric capacity, be coupled between this first transistor and this transistor seconds, be used to a store voltages stage, a charging voltage that reacts on one second sweep signal and store this limit voltage that is associated with this transistor seconds, and this charging voltage will in this data write phase, react on the storage of this data voltage and change;
One the 4th transistor couples this second electric capacity of the 3rd transistor AND gate, is used to an initial phase, react on one second sweep signal and collaborative the 3rd transistor with a first end voltage of this second electric capacity of initialization; And
One the 5th transistor is coupled between this second electric capacity and this earthing potential, is used to this initial phase, reacts on this second sweep signal and one second terminal voltage of this second electric capacity of initialization.
2. organic light-emitting diode pixel circuit according to claim 1, wherein this organic light-emitting diode pixel circuit successively enters this initial phase, this store voltages stage, this data write phase, and this glow phase.
3. organic light-emitting diode pixel circuit according to claim 2, wherein this data voltage is a negative voltage.
4. organic light-emitting diode pixel circuit according to claim 3, wherein:
The grid of this first transistor is in order to receive this first sweep signal, and the source electrode of this first transistor is in order to receive this data voltage;
The first end of this first electric capacity couples the drain electrode of this first transistor, and the second end of this first electric capacity is coupled to this earthing potential;
The first end of this second electric capacity couples the drain electrode of this first transistor and the first end of this first electric capacity;
The grid of this transistor seconds couples the second end of this second electric capacity, and the source electrode of this transistor seconds is coupled to this supply voltage;
The 3rd transistorized grid is in order to receive this luminous signal, and the 3rd transistorized source electrode couples the drain electrode of this transistor seconds;
The anode of this Organic Light Emitting Diode couples the 3rd transistorized drain electrode, and the negative electrode of this Organic Light Emitting Diode is coupled to this earthing potential;
The 4th transistorized grid is in order to receive this second sweep signal, the 4th transistorized source electrode couples drain electrode and the 3rd transistorized source electrode of this transistor seconds, and the 4th transistorized drain electrode couples the grid of this transistor seconds and the second end of this second electric capacity; And
The 5th transistorized grid is in order to receiving this second sweep signal, and the 5th transistorized source electrode couples the first end of the drain electrode of this first transistor and this first and this second electric capacity, and the 5th transistorized drain electrode is coupled to this earthing potential.
5. organic light-emitting diode pixel circuit according to claim 4, wherein this first to the 5th transistor is all the P transistor npn npn.
6. organic light-emitting diode pixel circuit according to claim 5, wherein:
In this initial phase, only this second sweep signal and this luminous signal activation;
In this store voltages stage, only this second sweep signal activation;
In this data write phase, only this first sweep signal activation; And
In this glow phase, only this luminous signal activation.
7. organic LED display panel with organic light-emitting diode pixel circuit as claimed in claim 1.
8. organic LED display panel according to claim 7, wherein this organic LED display panel is to utilize the thin film transistor (TFT) process technique of low temperature polycrystalline silicon to make.
9. organic light emitting diode display with organic LED display panel as claimed in claim 8.
10. an OLED driver circuit, is characterized in that, comprising:
One the first transistor is used to a data write phase, reacts on one first sweep signal and transmits a data voltage;
One first electric capacity is coupled between this first transistor and an earthing potential, is used to this data write phase, stores this data voltage;
One transistor seconds is coupled to a supply voltage, is used to a glow phase, this drive current that generation is not affected by a critical voltage of this supply voltage and this transistor seconds;
One the 3rd transistor is serially connected with between this transistor seconds and this Organic Light Emitting Diode, is used to this glow phase, reacts on a luminous signal and transmits this drive current to one Organic Light Emitting Diode, uses that to drive this Organic Light Emitting Diode luminous;
One second electric capacity, be coupled between this first transistor and this transistor seconds, be used to a store voltages stage, a charging voltage that reacts on one second sweep signal and store this limit voltage that is associated with this transistor seconds, and this charging voltage will in this data write phase, react on the storage of this data voltage and change;
One the 4th transistor couples this second electric capacity of the 3rd transistor AND gate, is used to an initial phase, react on one second sweep signal and collaborative the 3rd transistor with a first end voltage of this second electric capacity of initialization; And
One the 5th transistor is coupled between this second electric capacity and this earthing potential, is used to this initial phase, reacts on this second sweep signal and one second terminal voltage of this second electric capacity of initialization.
11. OLED driver circuit according to claim 10, wherein this OLED driver circuit successively enters this initial phase, this store voltages stage, this data write phase, and this glow phase.
12. OLED driver circuit according to claim 11, wherein this data voltage is a negative voltage.
13. OLED driver circuit according to claim 12, wherein:
The grid of this first transistor is in order to receive this first sweep signal, and the source electrode of this first transistor is in order to receive this data voltage;
The first end of this first electric capacity couples the drain electrode of this first transistor, and the second end of this first electric capacity is coupled to this earthing potential;
The first end of this second electric capacity couples the drain electrode of this first transistor and the first end of this first electric capacity;
The grid of this transistor seconds couples the second end of this second electric capacity, and the source electrode of this transistor seconds is coupled to this supply voltage;
The 3rd transistorized grid is in order to receive this luminous signal, and the 3rd transistorized source electrode couples the drain electrode of this transistor seconds;
The anode of this Organic Light Emitting Diode couples the 3rd transistorized drain electrode, and the negative electrode of this Organic Light Emitting Diode is coupled to this earthing potential;
The 4th transistorized grid is in order to receive this second sweep signal, the 4th transistorized source electrode couples drain electrode and the 3rd transistorized source electrode of this transistor seconds, and the 4th transistorized drain electrode couples the grid of this transistor seconds and the second end of this second electric capacity; And
The 5th transistorized grid is in order to receiving this second sweep signal, and the 5th transistorized source electrode couples the first end of the drain electrode of this first transistor and this first and this second electric capacity, and the 5th transistorized drain electrode is coupled to this earthing potential.
14. OLED driver circuit according to claim 13, wherein this first to the 5th transistor is all the P transistor npn npn.
15. OLED driver circuit according to claim 14, wherein:
In this initial phase, only this second sweep signal and this luminous signal activation;
In this store voltages stage, only this second sweep signal activation;
In this data write phase, only this first sweep signal activation; And
In this glow phase, only this luminous signal activation.
16. an OLED driver circuit is characterized in that, comprising:
One driver element is coupled between a supply voltage and an Organic Light Emitting Diode, and comprises a driving transistors, is used to the drive current that a glow phase is controlled this Organic Light Emitting Diode of flowing through;
One data storage cell comprises one first electric capacity that is coupled to an earthing potential, is used to a data write phase, receives and store a data voltage to this first electric capacity; And
One voltage storage cell is coupled between this driver element and this data storage cell, and comprises one second electric capacity, is used to a store voltages stage, records a critical voltage of this driving transistors,
Wherein, in this glow phase, this driver element reacts on this critical voltage of this data voltage and this driving transistors and produces this drive current of this Organic Light Emitting Diode of flowing through, and this drive current is not subjected to the impact of this critical voltage of this supply voltage and this driving transistors.
17. OLED driver circuit according to claim 16, wherein the source electrode of this driving transistors is coupled to this supply voltage, and this driver element also comprises:
One light emitting control transistor, its grid is in order to receive a luminous signal, and its source electrode couples the drain electrode of this driving transistors, and its drain electrode couples the anode of this Organic Light Emitting Diode, and wherein the negative electrode of this Organic Light Emitting Diode is coupled to this earthing potential.
18. OLED driver circuit according to claim 17, wherein this data storage cell also comprises:
One writes transistor, and its grid is in order to receive one first sweep signal, and its source electrode is in order to receive this data voltage, and its drain electrode couples the first end of this first electric capacity, and wherein the second end of this first electric capacity is coupled to this earthing potential.
19. OLED driver circuit according to claim 18, wherein the first end of this second electric capacity couples this first end that writes transistorized drain electrode and this first electric capacity, the second end of this second electric capacity couples the grid of this driving transistors, and this voltage storage cell also comprises:
One first transmission transistor, its grid is in order to receive one second sweep signal, and its source electrode couples drain electrode and the transistorized source electrode of this light emitting control of this driving transistors, and its drain electrode couples the grid of this driving transistors and the second end of this second electric capacity; And
One second transmission transistor, its grid be in order to receiving this second sweep signal, and its source electrode couples this first end that writes transistorized drain electrode and this first and this second electric capacity, and its drain electrode is coupled to this earthing potential.
20. OLED driver circuit according to claim 19, wherein:
This first transmission transistor is used to an initial phase, react on this second sweep signal and collaborative this light emitting control transistor with a first end voltage of this second electric capacity of initialization; And
This second transmission transistor is used to this initial phase, reacts on this second sweep signal and one second terminal voltage of this second electric capacity of initialization.
21. OLED driver circuit according to claim 20, wherein this OLED driver circuit successively enters this initial phase, this store voltages stage, this data write phase, and this glow phase.
22. OLED driver circuit according to claim 20, wherein this data voltage is a negative voltage.
23. OLED driver circuit according to claim 22, wherein this driving transistors, this light emitting control transistor, this writes transistor and this first and is all the P transistor npn npn with this second transmission transistor.
24. OLED driver circuit according to claim 23, wherein:
In this initial phase, only this second sweep signal and this luminous signal activation;
In this store voltages stage, only this second sweep signal activation;
In this data write phase, only this first sweep signal activation; And
In this glow phase, only this luminous signal activation.
CN201110379600XA 2011-11-24 2011-11-24 Organic light emitting diode pixel circuit and driving circuit and application thereof Pending CN103137062A (en)

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Application publication date: 20130605