CN103123922B - Method and system for determining surface morphology of aluminum metal gate chip - Google Patents
Method and system for determining surface morphology of aluminum metal gate chip Download PDFInfo
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- CN103123922B CN103123922B CN201210564162.9A CN201210564162A CN103123922B CN 103123922 B CN103123922 B CN 103123922B CN 201210564162 A CN201210564162 A CN 201210564162A CN 103123922 B CN103123922 B CN 103123922B
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 270
- 238000000034 method Methods 0.000 title claims abstract description 82
- 238000006243 chemical reaction Methods 0.000 claims abstract description 209
- 238000009826 distribution Methods 0.000 claims abstract description 180
- 238000000227 grinding Methods 0.000 claims abstract description 147
- 239000007788 liquid Substances 0.000 claims abstract description 96
- 239000002245 particle Substances 0.000 claims abstract description 33
- 229910052782 aluminium Inorganic materials 0.000 claims description 47
- 239000000203 mixture Substances 0.000 claims description 46
- 239000004411 aluminium Substances 0.000 claims description 39
- 239000002923 metal particle Substances 0.000 claims description 32
- 238000005498 polishing Methods 0.000 claims description 32
- 239000004094 surface-active agent Substances 0.000 claims description 27
- 230000008859 change Effects 0.000 claims description 20
- 239000002738 chelating agent Substances 0.000 claims description 12
- 239000007800 oxidant agent Substances 0.000 claims description 12
- 230000001590 oxidative effect Effects 0.000 claims description 12
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical compound [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 claims description 10
- 239000000470 constituent Substances 0.000 claims description 9
- 239000000376 reactant Substances 0.000 claims description 8
- 238000009792 diffusion process Methods 0.000 claims description 6
- 238000000926 separation method Methods 0.000 claims description 6
- 230000002441 reversible effect Effects 0.000 claims description 4
- 239000012669 liquid formulation Substances 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 36
- 239000000126 substance Substances 0.000 abstract description 9
- 239000012530 fluid Substances 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 230000000694 effects Effects 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 9
- 238000012876 topography Methods 0.000 description 6
- 229940037003 alum Drugs 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 230000002925 chemical effect Effects 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000003628 erosive effect Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000011513 prestressed concrete Substances 0.000 description 4
- 239000013522 chelant Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000007373 indentation Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 150000002605 large molecules Chemical class 0.000 description 2
- 229920002521 macromolecule Polymers 0.000 description 2
- 238000004886 process control Methods 0.000 description 2
- 230000036632 reaction speed Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- UNILWMWFPHPYOR-KXEYIPSPSA-M 1-[6-[2-[3-[3-[3-[2-[2-[3-[[2-[2-[[(2r)-1-[[2-[[(2r)-1-[3-[2-[2-[3-[[2-(2-amino-2-oxoethoxy)acetyl]amino]propoxy]ethoxy]ethoxy]propylamino]-3-hydroxy-1-oxopropan-2-yl]amino]-2-oxoethyl]amino]-3-[(2r)-2,3-di(hexadecanoyloxy)propyl]sulfanyl-1-oxopropan-2-yl Chemical compound O=C1C(SCCC(=O)NCCCOCCOCCOCCCNC(=O)COCC(=O)N[C@@H](CSC[C@@H](COC(=O)CCCCCCCCCCCCCCC)OC(=O)CCCCCCCCCCCCCCC)C(=O)NCC(=O)N[C@H](CO)C(=O)NCCCOCCOCCOCCCNC(=O)COCC(N)=O)CC(=O)N1CCNC(=O)CCCCCN\1C2=CC=C(S([O-])(=O)=O)C=C2CC/1=C/C=C/C=C/C1=[N+](CC)C2=CC=C(S([O-])(=O)=O)C=C2C1 UNILWMWFPHPYOR-KXEYIPSPSA-M 0.000 description 1
- 101100343342 Caenorhabditis elegans lin-11 gene Proteins 0.000 description 1
- 239000004480 active ingredient Substances 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention provides a method and a system for determining the surface appearance of an aluminum metal gate chip, which are used for determining the average grinding removal rate of the aluminum metal gate according to the grinding parameters of chemical mechanical grinding, the chemical reaction of each component in grinding fluid and the surface of the aluminum metal gate chip and the reaction rate equation of the mechanical removal reaction of grinding particles on the surface of the chip; determining the surface pressure distribution of the aluminum metal gate chip according to the deformation distribution of a grinding pad during the chemical mechanical grinding of the aluminum metal gate chip, then determining the concentration distribution of each component in the grinding fluid and the reaction rate distribution of the mechanical removal reaction on the surface of the aluminum metal gate chip, and determining the grinding removal rate distribution of the aluminum metal gate; and determining the surface height distribution of the aluminum metal gate chip according to the grinding removal rate distribution. The surface appearance of the aluminum metal gate can be accurately determined by comprehensively considering the mechanical removal of effective grinding particles, the chemical kinetic removal of the grinding liquid to the chip and the pressure distribution of the surface of the aluminum metal gate chip in the grinding process.
Description
Technical field
The present invention relates to semiconductor manufacturability design technical field, particularly relate in CMP (Chemical Mechanical Polishing) process the method and system determining aluminum metal grid chip surface morphology.
Background technology
The Moore's Law that the integrated level that high-k gate dielectric and metal gate technique (HKMG, High-k Metal Gate) make the development of semicon industry still follow every 18 months chips as the prevailing technology technology of 32 or 28 nanometer nodes doubles.Along with the continuous decline of chip node size, in chip manufacturing process process, the evenness of chip surface is the key factor affecting subsequent manufacturing procedures and chip yields.Cmp (CMP, Chemical Mechanical Polishing) technique is as the reliable method realizing chip surface planarization in manufacturability design, now be widely used in the hyperfine surface flattening processing of chip, being the most effective and the most practical technology realizing nanometer grade super smooth not damaged Surface Machining at present, is also the unique extensive use technology realizing global planarizartion at present.
In " first grid " and " post tensioned unbonded prestressed concrete " two kinds of techniques of HKMG technology, " post tensioned unbonded prestressed concrete " technique need not stand high-temperature step, can more freely arrange and allocate the work function value of gate material, make the stability of chip and reliability higher.Therefore, integrated circuit industry is more prone to when manufacturing high performance chips select " post tensioned unbonded prestressed concrete " technique.But " post tensioned unbonded prestressed concrete " technique faces more technique difficulty and design restriction, and the flatness on gate metal surface is extremely difficult up to standard, and the incomplete grinding in CMP will cause metal not removed totally, thus cause short circuit; Overmastication can cause gate electrode thinner, produces too high gate resistance and potential contacted etching.In addition, serious excessive polishing can cause contiguous source/drain region to expose, and makes to be attacked in follow-up mute grid etching process.Therefore, need according to HKMG technique actual, set up defining method that is scientific and reasonable, CMP result accurately and reliably, the height change of real-time estimate metal surface, reduce the butterfly after grinding and erosion, make surface reach technological requirement.
At present, the core technology of the CMP result defining method of the semicon industry main flow manufacturer of comparative maturity is mainly for the CMP process of copper, and aluminium is thinner as deposition thickness during grid material, require very harsh to CMP, the defining method of the existing CMP result for copper is difficult to the flatening process being directly used in alum gate.Domestic main chip manufacturer mainly relies on experience empirical analysis for the CMP process control of alum gate, general result by experiment predicts the grinding result of chip under identical grinding condition, this Forecasting Methodology have ignored lapping liquid, abrasive parameters etc. to the evenness of chip and the impact of wafer clearance after grinding, and it predicts the outcome and accurately can not embody the grinding effect of CMP.Especially in nanoscale node chip manufacture process, the flatness requirement on surface is high, and the effect of the chemical effect of polishing particles in grinding is removed is more outstanding, the interaction of grinding pad, lapping liquid and chip surface is an extremely complicated process, and the method for experience real example can not be adopted simply to describe the pattern on the rear aluminum metal grid surface of CMP grinding.
Summary of the invention
The object of this invention is to provide a kind of method of aluminum metal grid chip surface morphology when accurately determining cmp.
To achieve these goals, the invention provides a kind of method determining aluminum metal grid chip surface morphology, comprise step:
Aluminum metal grid chip is provided to carry out the abrasive parameters of cmp;
Determine that chemical reaction that in lapping liquid, each composition and aluminum metal grid chip surface occur and polishing particles remove the reaction rate equation reacted, by the average abrasive clearance of described reaction rate equation determination aluminum metal grid to aluminum metal grid chip surface machinery;
According to grinding pad deformation distribution during aluminum metal grid chip cmp, determine aluminum metal grid chip surface pressure distribution;
According to external load and described surface pressure distribution, determine that the reaction rate distribution of reaction removed by the machinery of the CONCENTRATION DISTRIBUTION of each composition in described lapping liquid, described aluminum metal grid chip surface;
According to the CONCENTRATION DISTRIBUTION of composition each in described lapping liquid and the reaction rate distribution of described machinery removal reaction, determine the grinding clearance distribution of aluminum metal grid;
According to described grinding clearance distribution, determine that aluminum metal grid chip surface height distributes.
Preferably, the abrasive parameters providing aluminum metal grid chip to carry out cmp described in comprises:
External load is provided;
The concentration of the composition of lapping liquid and each composition is provided.
Preferably, describedly determine that chemical reaction that in lapping liquid, each composition and aluminum metal grid chip surface occur and polishing particles remove to aluminum metal grid chip surface machinery the reaction rate equation reacted, by the average abrasive clearance of described reaction rate equation determination aluminum metal grid, comprising:
Determine the chemical reaction that in described lapping liquid, each composition and aluminum metal grid chip surface occur;
Determine that in described lapping liquid, polishing particles removes reaction to the machinery of aluminum metal grid chip surface;
Determine that the reaction rate equation of reaction removed by described chemical reaction and surface machinery, by the relation of described reaction rate equation determination metal particle concentrations rate of change and metal particle concentrations in time;
According to the relation of described metal particle concentrations rate of change and metal particle concentrations in time, determine the average abrasive clearance of aluminum metal grid.
Preferably, described according to grinding pad deformation distribution during aluminum metal grid chip cmp, determine aluminum metal grid chip surface pressure distribution, comprising:
Relation when determining aluminum metal grid chip cmp between grinding pad deformation distribution and aluminum metal grid inter-chip pitch;
Determine pressure distribution between grinding pad and aluminum metal grid chip and the correlation between grinding pad deformation distribution;
According to grinding pad deformation distribution during aluminum metal grid chip cmp, determine aluminum metal grid chip surface pressure distribution.
Preferably, described according to external load and described surface pressure distribution, determine that the reaction rate distribution of reaction removed by the machinery of the CONCENTRATION DISTRIBUTION of each composition in described lapping liquid, described aluminum metal grid chip surface, comprising:
The CONCENTRATION DISTRIBUTION of each composition in lapping liquid is obtained by liquid diffusion equation;
Remove the reaction rate of reacting according to the machinery of external load and surface pressure distribution determination aluminum metal grid chip surface to distribute.
Preferably, described according to described grinding clearance distribution, determine that aluminum metal grid chip surface height distributes, comprising:
The relation removed between rate distribution according to the distribution of aluminum metal grid chip surface height and grinding and the grinding clearance of aluminum metal grid distribute, and adopt the distribution of Numerical method determination aluminum metal grid chip surface height.
Correspondingly, the present invention also provides a kind of system determining aluminum metal grid chip surface morphology, it is characterized in that, comprising:
Abrasive parameters configuration module, for configuring the abrasive parameters of aluminum metal grid cmp, described abrasive parameters comprises: the parameters such as grinding temperature, external load, chip and grinding pad relative sliding speed, lapping liquid formula;
Reaction determination module, the relation of metal particle concentrations rate of change and metal particle concentrations in time in the reaction of generation when determining that CMP grind according to the lapping liquid concentration of component of described abrasive parameters configuration module configuration, reaction rate constant and reactant;
Average abrasive clearance determination module, according to the relation of metal particle concentrations in metallic mass balance during grinding and the reactant determined of described reaction determination module rate of change and metal particle concentrations in time, determines average abrasive clearance;
Initial separation distribution determination module, for determining the spatial distribution of the distance between aluminum metal grid chip and grinding pad;
Surface pressure distribution determination module, the metric space between the aluminum metal grid chip determined according to described initial separation distribution determination module and grinding pad distributes, and determines aluminum metal grid chip surface pressure distribution;
Grinding clearance distribution determination module, for carrying out the grinding clearance distribution determining aluminum metal grid chip surface when CMP grinds, comprises the reaction rate distribution determination module of each constituent concentration distribution determination module of lapping liquid and machinery removal reaction.Wherein, described lapping liquid each constituent concentration distribution determination module is used for the CONCENTRATION DISTRIBUTION according to each composition in liquid diffusion equation determination lapping liquid, determines that aluminum metal grid chip surface machinery is everywhere removed reaction rate and distributed when the reaction rate distribution determination module of machinery removal reaction is for carrying out CMP grinding.The grinding clearance of the machinery removal reaction rate distribution that in the lapping liquid that described grinding clearance distribution determination module utilizes described lapping liquid each constituent concentration distribution determination module to determine, the CONCENTRATION DISTRIBUTION of each composition, the reaction rate distribution determination module of described machinery removal reaction are determined and the average abrasive clearance determination aluminum metal grid that described average abrasive clearance determination module is determined distributes;
Apparent height distribution determination module, the relation between the grinding clearance for determining according to described grinding clearance distribution determination module distributes and apparent height distributes and grinding clearance distributes, determines the height distribution of aluminum metal grid chip surface.
Preferably, described reaction determination module comprises:
Chemical reaction determination submodule, for determining the chemical reaction occurred when CMP grinds, comprise: the chemical reaction of the chemical reaction of the reaction of aluminium and surfactant, aluminium and oxidant, aluminium ion and chelating agent and the reaction rate constant respectively reacted, wherein the reaction of aluminium and surfactant is reversible reaction;
Machinery is removed reaction and is determined submodule, reacts, and reaction rate constant for determining in the lapping liquid that occurs when CMP grind that polishing particles is removed aluminum metal grid surface machinery;
The reaction of described reaction determination module synthetic chemistry determines that the relation of metal particle concentrations in the reaction and reaction rate constant determination product occurred when the grinding that submodule configures is determined in reaction rate of change and metal particle concentrations in time removed by submodule and machinery.
Compared with prior art, of the present inventionly determine that the method for aluminum metal grid chip surface morphology has following advantages:
Method and system provided by the invention, carries out according to aluminum metal grid chip chemical reaction that in the abrasive parameters of cmp, lapping liquid, each composition and aluminum metal grid chip surface occur and polishing particles removes the average abrasive clearance of the reaction rate equation determination aluminum metal grid reacted to aluminum metal grid chip surface machinery; And according to grinding pad deformation distribution during aluminum metal grid chip cmp, determine aluminum metal grid chip surface pressure distribution, then determine that the reaction rate distribution of reaction removed by the machinery of the CONCENTRATION DISTRIBUTION of each composition in described lapping liquid, described aluminum metal grid chip surface, determine the grinding clearance distribution of aluminum metal grid; According to described grinding clearance distribution, determine that aluminum metal grid chip surface height distributes.The present invention considers the removal of effective polishing particles machinery, lapping liquid is removed and aluminum metal grid chip surface pressure distribution in process of lapping the chemical kinetics of chip, provides a kind of method determining aluminum metal grid surface topography more accurately.
In addition, the present invention effectively can portray chip surface pressure distribution, pattern change and the graphic feature such as butterfly and erosion, realizes manufacturability design CMP simulated technological process fast, shortens the technique adjustment cycle, reduce costs.Therefore, the present invention from grinding mechanism analyze actual process adjustment all there is certain guidance meaning.
Accompanying drawing explanation
Fig. 1 is the flow chart of the method for determination aluminum metal grid chip surface morphology of the present invention;
Fig. 2 is the flow chart of the average abrasive clearance determining aluminum metal grid;
At the schematic diagram that aluminum metal grid surface reacts when Fig. 3 is cmp;
Fig. 4 is the schematic diagram of the system of determination aluminum metal grid chip surface morphology of the present invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described.Obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Secondly, the present invention is described in detail in conjunction with schematic diagram, and when describing the embodiment of the present invention in detail, for ease of illustrating, described schematic diagram is example, and it should not limit the scope of protection of the invention at this.
As described in background, the core technology of the semicon industry main flow CMP result defining method of current comparative maturity is mainly for the CMP process of copper, and aluminium is thinner as deposition thickness during grid material, require very harsh to CMP, the existing CMP result defining method for copper is difficult to the flatening process being directly used in alum gate CMP.CMP process control for alum gate mainly relies on experience empirical analysis, general result by experiment predicts the grinding result of chip under identical grinding condition, this Forecasting Methodology have ignored lapping liquid, abrasive parameters etc. to the evenness of chip and the impact of wafer clearance after grinding, and it predicts the outcome and accurately can not embody the grinding effect of CMP.Especially in nanoscale node chip manufacture process, the flatness requirement on surface is high, and the effect of the chemical effect of polishing particles in grinding is removed is more outstanding, the interaction of grinding pad, lapping liquid and chip surface is an extremely complicated process, and the method for experience real example can not be adopted simply to describe the pattern on the rear aluminum metal grid surface of CMP grinding.
In order to the real-time surface topography of the aluminum metal grid of aluminum metal grid in CMP process of lapping accurately can be determined, the present invention considers the removal of effective polishing particles machinery, lapping liquid is removed and aluminum metal grid chip surface pressure distribution in process of lapping the chemical kinetics of chip, provides a kind of method determining aluminum metal grid surface topography more accurately.Below in conjunction with accompanying drawing, the specific embodiment of the present invention is elaborated.
Fig. 1 is the particular flow sheet of the method for determination aluminum metal grid surface topography of the present invention, the following detailed description of the detailed process of surface topography when determining that aluminum metal grid CMP grinds.
Step S1, provides aluminum metal grid chip to carry out the abrasive parameters of cmp.
Abrasive parameters comprises: the parameters such as grinding temperature, external load, chip and grinding pad relative sliding speed, lapping liquid formula.
Usually need when aluminum metal grid carry out CMP grinding to apply external load to improve grinding efficiency to chip.
The lapping liquid that aluminum metal adopts when carrying out CMP grinding generally includes oxidant, chelating agent, surfactant, polishing particles etc.
Step S2, determine that chemical reaction that in lapping liquid, each composition and aluminum metal grid chip surface occur and polishing particles remove the reaction rate equation reacted, by the average abrasive clearance of described reaction rate equation determination aluminum metal grid to aluminum metal grid chip surface machinery.
There is the chemical reaction of each active ingredient and aluminum metal grid chip surface in lapping liquid when CMP grinds, and polishing particles removes reaction to the machinery on aluminum metal grid surface.
In aluminum metal grid CMP process of lapping, the aluminium generation chemical reaction on the oxidant in lapping liquid, chelating agent and metal gate surface generates oxide and the chelate of aluminium, the aluminium on the surfactant in lapping liquid and metal gate surface produces suction-operated, forms the compound active agent of aluminium and hinders the etching of indentation metal surface." reaction " of aluminium and surfactant is physical adsorption process in essence, claims " suction-operated of the aluminium on surfactant and metal gate surface " to be " chemical reaction " herein for the ease of unified discussion.
In aluminum metal grid chemical mechanical planarization process, the oxide-film at aluminum metal grid rat place is removed by effective polishing particles mechanical lapping, rotated by grinder, grinding pad rubs and aluminum metal surface is left in outdiffusion effect, oxidized, chelating, absorption are continued in simultaneously fresh aluminium surface under the effect of lapping liquid, removed by mechanical lapping again, move in circles until complete the CMP process of aluminum metal grid.Reacting quintessence removed by machinery is a physical mechanical process, claims " in lapping liquid, polishing particles is to the mechanical removal effect in surface of aluminum metal grid " to be " reaction " herein for the ease of unified discussion.
The chemical reaction occurred according to composition each in lapping liquid and aluminum metal grid surface and polishing particles remove to aluminum metal grid surface machinery the reaction rate equation reacted, the ratio of the aluminum particulate total concentration on aluminum particulate concentration and the aluminum metal grid surface comprised in lapping liquid can be determined, i.e. the average abrasive clearance of aluminum metal grid.The particle generated after surfactant, oxidant, chelating agent etc. and reactive aluminum when described aluminum particulate comprises grinding.
Step S3, according to grinding pad deformation distribution during aluminum metal grid chip cmp, determines aluminum metal grid chip surface pressure distribution.
When aluminum metal grid chip carries out CMP grinding, due to the existence of polishing particles in lapping liquid, distance Existential Space between aluminum metal grid chip and grinding pad is distributed, causes the pressure of aluminum metal grid chip surface different, there is pressure distribution at aluminum metal grid chip surface.
Step S4, according to external load and described surface pressure distribution, determines that the reaction rate distribution of reaction removed by the machinery of the CONCENTRATION DISTRIBUTION of each composition in described lapping liquid, described aluminum metal grid chip surface.
When aluminum metal grid chip carries out CMP grinding, distance Existential Space between aluminum metal grid chip and grinding pad distributes, and there is pressure distribution at aluminum metal grid chip surface, CMP process of lapping is a dynamic process, to cause in lapping liquid each composition can not the movement rapidly along with process of lapping, therefore, also there is the CONCENTRATION DISTRIBUTION of each composition in lapping liquid when aluminum metal grid chip carries out CMP grinding.
The pressure everywhere that polishing particles in lapping liquid removes reaction rate and aluminum metal grid chip surface to the machinery of aluminum metal grid chip surface is closely related, therefore removes reaction at the machinery of aluminum metal grid chip surface and there is reaction rate constant distribution.
Step S5, according to the CONCENTRATION DISTRIBUTION of composition each in described lapping liquid and the reaction rate distribution of described machinery removal reaction, determines the grinding clearance distribution of aluminum metal grid.
The reaction rate distribution of the CONCENTRATION DISTRIBUTION of composition each in the lapping liquid of the determination in step S4 and machinery being removed reaction replaces the CONCENTRATION DISTRIBUTION of each composition in the average abrasive clearance of the aluminum metal grid determined in step S2 and machinery to remove the reaction rate of reaction, can determine the grinding clearance distribution of aluminum metal grid.
Step S6, according to described grinding clearance distribution, determines that aluminum metal grid chip surface height distributes.
When carrying out CMP grinding, there is the relation determined between apparent height distribution and grinding clearance distribute in aluminum metal grid chip, is distributed can determine that aluminum metal grid chip surface height distributes by the grinding clearance of the aluminum metal grid determined in step S5.
The embodiment of the method for determination aluminum metal grid CMP surface topography of the present invention is introduced in detail below in conjunction with accompanying drawing:
Perform step S1, provide aluminum metal grid chip to carry out the abrasive parameters of cmp.
In the present embodiment, apply uniform pressure P when aluminum metal grid chip carries out CMP grinding.In process of lapping, the parameters such as applied pressure P, grinding temperature T, chip and grinding pad relative sliding speed are fixed value.The component of the lapping liquid that aluminum metal grid chip adopts when carrying out CMP grinding is generally: surfactant In, and concentration is designated as [In]; Oxidant Oxi, concentration is designated as [Oxi]; Chelating agent CA, concentration is designated as [CA]; Effective polishing particles A.In addition, in lapping liquid, other compositions can also be comprised, such as deionized water, pH value conditioning agent etc.
Perform step S2, determine that chemical reaction that in lapping liquid, each composition and aluminum metal grid surface occurs and polishing particles mechanically remove the reaction rate equation reacted, by the average abrasive clearance of described reaction rate equation determination aluminum metal grid to aluminum metal grid are surperficial.
See Fig. 2, this step specifically comprises the following steps:
Step S21, determines the chemical reaction that in described lapping liquid, each composition and aluminum metal grid chip surface occur.
When aluminum metal grid chip carries out CMP grinding, see Fig. 3, carry out, in CMP process of lapping, mainly there is following chemical reaction on aluminum metal grid chip 10 surface:
1) chemical reaction of aluminium and surfactant:
The chemical reaction of aluminium and surfactant is reversible reaction, wherein, and k
1for aluminium when temperature is T and surfactant In react the positive reaction speed constant generating Al surfactant compd A lIn11, k
2for when temperature is T, Al surfactant compd A lIn is decomposed into the negative reaction speed constant of aluminium and surfactant.In the compd A lIn obstruction indentation metal surface etching of the aluminium that metallic aluminum surface reaction generates, play suppression and corrosion inhibition." reaction " of aluminium and surfactant is physical adsorption process in essence, claims " suction-operated of the aluminium on surfactant and metal gate surface " to be " chemical reaction " herein for the ease of unified discussion.
2) chemical reaction of aluminium and oxidant:
Wherein, k
3the reaction rate constant of the oxide 12 of aluminium is oxidized to for oxidized dose of metallic aluminium when temperature is T.In aluminum metal CMP surface grinding process, the Oxi oxidation of oxidized dose of aluminum metal surface, forms surface film oxide under the effect of oxidant.
3) chemical reaction of aluminium ion and chelating agent:
Wherein, k
4for aluminium ion when temperature is T and chelating agent CA react the reaction rate constant generating large molecule aluminium chelate compound 13, the large molecule aluminium chelate compound of generation is easy to depart from from aluminum metal grid surface.
Under prescribed conditions, reaction rate constant k
1, k
2, k
3and k
4reaction rate when concentration for reactant is all unit concentration.Whether reaction rate constant is the feature physical constant of a reaction, with temperature, solvent, use the reaction conditions such as catalyst relevant, and have nothing to do with the concentration of reactant, and the size of reaction rate constant reflects the speed of chemical reaction rate under specified criteria.
Step S22, determines that in described lapping liquid, polishing particles removes reaction to the machinery of aluminum metal grid chip surface.
Carry out in CMP process of lapping on aluminum metal grid chip 10 surface, polishing particles in lapping liquid is removed machineries such as the oxide-films of aluminum metal grid chip surface, oxidized, chelating, absorption are continued in simultaneously fresh aluminium surface under the effect of lapping liquid, removed by mechanical lapping again, the machinery of generation is removed reaction and is:
This reaction is not chemical reaction truly, and be referred to as reaction in order to unified discussion here, its essential meaning is that aluminium ion is removed by machinery, and expose fresh aluminium simple substance surface, the mechanical residue removed will depart from aluminum metal grid surface.Wherein, Al
3+represent the oxide-film at metal gate rat place, A represents the polishing particles in lapping liquid, and δ is reaction residue 14, k
5for reaction rate constant removed by machinery.K
5under informing fixed condition, whether the mechanical speed removing reaction rate, with temperature, pressure, solvent, use the reaction conditions such as catalyst relevant.
In step S21 and step S22, the product of each reaction is rotated by grinder, grinding pad rubs and aluminum metal surface is left in outdiffusion effect, moves in circles, until complete alum gate CMP process of lapping.
Step S23, determines that the reaction rate equation of reaction removed by described chemical reaction and surface machinery, by the relation of described reaction rate equation determination metal particle concentrations rate of change and metal particle concentrations in time.
Consider the chemical reaction in the CMP process determined in step S20 and step S1 and surface machinery removal reaction, the reaction rate equation in CMP process of lapping can be determined, the relation of metal particle concentrations in time between rate of change and metal particle concentrations can be determined by reaction rate equation.Especially, can determine the relation of the aluminium atomic concentration that the surfactant compounds concentration changes with time rate of aluminium and aluminum metal grid surface comprise and Al surfactant compound concentration, and the pass of the aluminium ion concentration surperficial aluminium atomic concentration that comprises of rate of change and aluminum metal grid and aluminium ion concentration is in time:
Wherein, the concentration of the chemical reaction product AlIn that [AlIn] is aluminium and surfactant, [Al] and [Al
3+] represent the aluminum metal grid aluminium atomic concentration that comprises of surface and aluminium ion concentration respectively.
Step S24, according to the relation of described metal particle concentrations rate of change and metal particle concentrations in time, determines the average abrasive clearance of aluminum metal grid.
When aluminum metal grid chip carries out CMP Milling balance, reach mass balance with the metallic of chip surface in lapping liquid, have:
The aluminum particulate total concentration [Al] that aluminum metal grid chip surface comprises
tfor:
[Al]
T=[Al]+[Al
3+]+[Al·In] （3）
In CMP process of lapping, the material average removal rate MRR of aluminium is the ratio of the aluminum particulate total concentration comprising aluminum particulate concentration and aluminum metal grid surface in lapping liquid, can be designated as:
According to above-mentioned (1), (2), (3) and (4) formula, can obtain the aluminum metal grid surface C MP average abrasive clearance MRR considering chemical effect and mechanical lapping coordinative role is:
Perform step S3, according to grinding pad deformation distribution during aluminum metal grid chip cmp, determine aluminum metal grid chip surface pressure distribution.
First, the relation of grinding pad deformation distribution and aluminum metal grid inter-chip pitch when needing to determine that aluminum metal grid chip CMP grinds.In CMP process of lapping, ignore the impact of lapping liquid on grinding pad deformation, grinding pad deformation distribution and aluminum metal grid inter-chip pitch H (x, y) meet relation:
H(x,y)=H
initial(x,y)+W
b(x,y)-H （6）
Wherein, H is the rigid body distortion of grinding pad, H
initial(x, y) is initial aluminum metal gate chip-grinding pad spacing distribution, can obtain initial aluminum metal gate chip-grinding pad spacing by Method of Stochastic or experimental measurement method.
Grinding pad and aluminum metal grid chip are assumed to point cantact, the pressure distribution P between grinding pad and aluminum metal grid chip
b(x, y) and grinding pad deformation distribution W
bcorrelation between (x, y) is:
Wherein, A is chip area, k
cfor the contact factor of grinding pad and aluminum metal grid chip,
In addition, grinding pad and aluminum metal grid chip chamber also should meet following relation:
Wherein, A
contactfor grinding pad and aluminum metal grid chip chamber real contact area.
Fast Fourier transform is adopted to solve the pressure distributed function P that (6)-(8) formula can obtain aluminum metal grid chip surface
b(x, y).
Perform step S4, according to described surface pressure distribution and external load, determine that the reaction rate distribution of reaction removed by the machinery of the CONCENTRATION DISTRIBUTION of each composition in described lapping liquid, described aluminum metal grid chip surface.
In lapping liquid, the CONCENTRATION DISTRIBUTION of each composition is obtained by liquid diffusion equation, here do not elaborate, the CONCENTRATION DISTRIBUTION of the oxidant Oxi near aluminum metal grid chip surface is designated as [Oxi] (x, y), the CONCENTRATION DISTRIBUTION of surfactant is designated as [In] (x, y), the CONCENTRATION DISTRIBUTION of chelating agent is designated as [CA] (x, y).
When not considering pressure distribution in lapping liquid, the reaction rate of reacting removed by the machinery of aluminum metal grid chip surface is k
5[Al
3+], think that the constant pressure carrying out metal gate chip surface when CMP grinds is constant.But the reaction rate that actual machine removes reaction is relevant with the pressure distribution of aluminum metal grid chip surface, in consideration lapping liquid, during pressure distribution, the reaction rate of aluminum metal grid chip surface machinery removal reaction is k
50p
b(x, y) [Al
3+]/P, wherein, the external load applied when P is grinding, k
50for the constant relevant to mechanical lapping.Therefore can think, when aluminum metal grid chip carries out CMP grinding, the reaction rate constant k of reaction removed by machinery
5existential Space distributes, and with the pass of pressure distribution in lapping liquid is:
k
5=k
50P
b(x,y)/P （9）
Perform step S5, according to the CONCENTRATION DISTRIBUTION of composition each in described lapping liquid and the reaction rate distribution of described machinery removal reaction, determine the grinding clearance distribution of aluminum metal grid.
The reaction rate constant distribution of the CONCENTRATION DISTRIBUTION of composition each in the lapping liquid of the determination in step S4 and machinery being removed reaction replaces the CONCENTRATION DISTRIBUTION of each composition in the average abrasive clearance of the aluminum metal grid determined in step S2 and machinery to remove the reaction rate of reaction, can determine that grinding clearance distribution MRR (x, y) of aluminum metal grid is:
For the grinding having figure unlike material, the calculating of MRR needs to consider respectively to remove Selection radio.
Perform step S6, according to described grinding clearance distribution, determine that aluminum metal grid chip surface height distributes.
Aluminum metal grid chip surface height distribution S (x, y, t) and grinding are removed between rate distribution MRR (x, y) exists following relationship:
The grinding clearance distribution determined in step S5 is substituted into (11) formula, adopts Numerical method to solve, aluminum metal grid chip surface height distribution S (x, y, t) can be obtained.
So far, adopt the method determining aluminum metal grid chip surface morphology of the present invention, consider polishing particles machinery remove and lapping liquid chemistry remove synergy, chemically kinetics and contact mechanics angle set out determine aluminum metal grid chip carry out CMP grinding time grinding clearance distribution and apparent height distribute.The apparent height distribution obtained according to the method for determination aluminum metal grid chip surface morphology of the present invention can further investigate the impact on butterfly and erosion of aluminum metal gate figure live width and density, set up the variation relation between chemical effect and graphic feature, for photoetching, electrical characteristic parameter and device simulation create conditions.
In addition, the present invention effectively can portray chip surface pressure distribution, pattern change and the graphic feature such as butterfly and erosion, realizes manufacturability design CMP simulated technological process fast, shortens the technique adjustment cycle, reduce costs.
Correspondingly, the present invention also provides a kind of system determining aluminum metal grid chip surface morphology, see Fig. 4, comprising:
Abrasive parameters configuration module 100, for configuring the abrasive parameters of aluminum metal grid cmp, described abrasive parameters comprises: the parameters such as grinding temperature, external load, chip and grinding pad relative sliding speed, lapping liquid formula.
Reaction determination module 200, the relation of metal particle concentrations rate of change and metal particle concentrations in time in the reaction of generation when determining that CMP grind according to the lapping liquid concentration of component of described abrasive parameters configuration module configuration, reaction rate constant and reactant.
Average abrasive clearance determination module 300, according to the relation of metal particle concentrations in metallic mass balance during grinding and the reactant determined of described reaction determination module 200 rate of change and metal particle concentrations in time, determines average abrasive clearance.
Initial separation distribution determination module 400, for determining the spatial distribution of the distance between aluminum metal grid chip and grinding pad.
Surface pressure distribution determination module 500, the metric space between the aluminum metal grid chip determined according to described initial separation distribution determination module 400 and grinding pad distributes, and determines aluminum metal grid chip surface pressure distribution.
Grinding clearance distribution determination module 600, for carrying out the grinding clearance distribution determining aluminum metal grid chip surface when CMP grinds, comprises the reaction rate distribution determination module 620 of lapping liquid each constituent concentration distribution determination module 610 and machinery removal reaction.Wherein, lapping liquid each constituent concentration distribution determination module 610, for the CONCENTRATION DISTRIBUTION according to each composition in liquid diffusion equation determination lapping liquid, determines when the reaction rate distribution determination module 620 of machinery removal reaction is for carrying out CMP grinding that aluminum metal grid chip surface machinery is everywhere removed reaction rate and distributed.The grinding clearance of the machinery removal reaction rate distribution that in the lapping liquid that described grinding clearance distribution determination module 600 utilizes described lapping liquid each constituent concentration distribution determination module 610 to determine, the CONCENTRATION DISTRIBUTION of each composition, the reaction rate distribution determination module 620 of described machinery removal reaction are determined and the average abrasive clearance determination aluminum metal grid that described average abrasive clearance determination module 300 is determined distributes.
Apparent height distribution determination module 700, the relation between the grinding clearance for determining according to described grinding clearance distribution determination module 600 distributes and apparent height distributes and grinding clearance distributes, determines the height distribution of aluminum metal grid chip surface.
Wherein, abrasive parameters configuration module 100 configures the composition of lapping liquid and the concentration of each composition, and the composition of usual lapping liquid comprises surfactant, chelating agent, oxidant, polishing particles etc.Wherein, in lapping liquid, the concentration of each composition and the interpolation speed of lapping liquid also have relation.
Reaction determination module 200 can comprise chemical reaction determination submodule and submodule is determined in machinery removal reaction, wherein, chemical reaction determination submodule is for determining the chemical reaction occurred when CMP grinds, comprise: the chemical reaction of the chemical reaction of the reaction of aluminium and surfactant, aluminium and oxidant, aluminium ion and chelating agent and the reaction rate constant respectively reacted, wherein the reaction of aluminium and surfactant is reversible reaction; Machinery is removed reaction and is determined that submodule reacts for determining in the lapping liquid that occurs when CMP grind that polishing particles is removed aluminum metal grid surface machinery, and reaction rate constant.The reaction of reaction determination module 200 synthetic chemistry determines that the relation of metal particle concentrations in the reaction and reaction rate constant determination product occurred when the grinding that submodule configures is determined in reaction rate of change and metal particle concentrations in time removed by submodule and machinery.Wherein, the particle generated after surfactant, oxidant, chelating agent etc. and reactive aluminum when metallic comprises grinding, the concentration of metallic the surfactant compounds concentration of aluminium and aluminium ion concentration represent.
The above is only preferred embodiment of the present invention, not does any pro forma restriction to the present invention.Any those of ordinary skill in the art, do not departing under technical solution of the present invention ambit, the Method and Technology content of above-mentioned announcement all can be utilized to make many possible variations and modification to technical solution of the present invention, or be revised as the Equivalent embodiments of equivalent variations.Therefore, every content not departing from technical solution of the present invention, according to technical spirit of the present invention to any simple modification made for any of the above embodiments, equivalent variations and modification, all still belongs to the scope of technical solution of the present invention protection.
Claims (8)
1. determine a method for aluminum metal grid chip surface morphology, it is characterized in that, comprise step:
Aluminum metal grid chip is provided to carry out the abrasive parameters of cmp;
Determine that chemical reaction that in lapping liquid, each composition and aluminum metal grid chip surface occur and polishing particles remove the reaction rate equation reacted, by the average abrasive clearance of described reaction rate equation determination aluminum metal grid to aluminum metal grid chip surface machinery;
According to grinding pad deformation distribution during aluminum metal grid chip cmp, determine aluminum metal grid chip surface pressure distribution;
According to external load and described surface pressure distribution, determine that the reaction rate distribution of reaction removed by the machinery of the CONCENTRATION DISTRIBUTION of each composition in described lapping liquid, described aluminum metal grid chip surface;
According to the CONCENTRATION DISTRIBUTION of composition each in described lapping liquid and the reaction rate distribution of described machinery removal reaction, determine the grinding clearance distribution of aluminum metal grid;
According to described grinding clearance distribution, determine that aluminum metal grid chip surface height distributes.
2. method according to claim 1, is characterized in that, described in provide aluminum metal grid chip to carry out cmp abrasive parameters comprise:
External load is provided;
The concentration of the composition of lapping liquid and each composition is provided.
3. method according to claim 1, it is characterized in that, describedly determine that chemical reaction that in lapping liquid, each composition and aluminum metal grid chip surface occur and polishing particles remove to aluminum metal grid chip surface machinery the reaction rate equation reacted, by the average abrasive clearance of described reaction rate equation determination aluminum metal grid, comprising:
Determine the chemical reaction that in described lapping liquid, each composition and aluminum metal grid chip surface occur;
Determine that in described lapping liquid, polishing particles removes reaction to the machinery of aluminum metal grid chip surface;
Determine that the reaction rate equation of reaction removed by described chemical reaction and surface machinery, by the relation of described reaction rate equation determination metal particle concentrations rate of change and metal particle concentrations in time;
According to the relation of described metal particle concentrations rate of change and metal particle concentrations in time, determine the average abrasive clearance of aluminum metal grid.
4. method according to claim 1, is characterized in that, described according to grinding pad deformation distribution during aluminum metal grid chip cmp, determines aluminum metal grid chip surface pressure distribution, comprising:
Relation when determining aluminum metal grid chip cmp between grinding pad deformation distribution and aluminum metal grid inter-chip pitch;
Determine pressure distribution between grinding pad and aluminum metal grid chip and the correlation between grinding pad deformation distribution;
According to grinding pad deformation distribution during aluminum metal grid chip cmp, determine aluminum metal grid chip surface pressure distribution.
5. method according to claim 1, it is characterized in that, described according to external load and described surface pressure distribution, determine that the reaction rate distribution of reaction removed by the machinery of the CONCENTRATION DISTRIBUTION of each composition in described lapping liquid, described aluminum metal grid chip surface, comprising:
The CONCENTRATION DISTRIBUTION of each composition in lapping liquid is obtained by liquid diffusion equation;
Remove the reaction rate of reacting according to the machinery of external load and surface pressure distribution determination aluminum metal grid chip surface to distribute.
6. method according to claim 1, is characterized in that, described according to described grinding clearance distribution, determines that aluminum metal grid chip surface height distributes, comprising:
The relation removed between rate distribution according to the distribution of aluminum metal grid chip surface height and grinding and the grinding clearance of aluminum metal grid distribute, and adopt the distribution of Numerical method determination aluminum metal grid chip surface height.
7. determine a system for aluminum metal grid chip surface morphology, it is characterized in that, comprising:
Abrasive parameters configuration module, for configuring the abrasive parameters of aluminum metal grid cmp, described abrasive parameters comprises: grinding temperature, external load, chip and grinding pad relative sliding speed, lapping liquid formulation parameter;
Reaction determination module, the relation of metal particle concentrations rate of change and metal particle concentrations in time in the reaction of generation when determining that CMP grind according to the lapping liquid concentration of component of described abrasive parameters configuration module configuration, reaction rate constant and reactant;
Average abrasive clearance determination module, according to the relation of metal particle concentrations in metallic mass balance during grinding and the reactant determined of described reaction determination module rate of change and metal particle concentrations in time, determines average abrasive clearance;
Initial separation distribution determination module, for determining the spatial distribution of the distance between aluminum metal grid chip and grinding pad;
Surface pressure distribution determination module, the metric space between the aluminum metal grid chip determined according to described initial separation distribution determination module and grinding pad distributes, and determines aluminum metal grid chip surface pressure distribution;
Grinding clearance distribution determination module, the grinding clearance distribution of aluminum metal grid chip surface is determined during for carrying out CMP grinding, comprise the reaction rate distribution determination module of each constituent concentration distribution determination module of lapping liquid and machinery removal reaction, wherein, described lapping liquid each constituent concentration distribution determination module is used for the CONCENTRATION DISTRIBUTION according to each composition in liquid diffusion equation determination lapping liquid, for carrying out, the reaction rate distribution determination module that reaction removed by machinery determines when CMP grinds that reaction rate distribution removed by aluminum metal grid chip surface machinery everywhere, the CONCENTRATION DISTRIBUTION of each composition in the lapping liquid that described grinding clearance distribution determination module utilizes described lapping liquid each constituent concentration distribution determination module to determine, the grinding clearance distribution of the machinery removal reaction rate distribution that the reaction rate distribution determination module that reaction removed by described machinery is determined and the average abrasive clearance determination aluminum metal grid that described average abrasive clearance determination module is determined,
Apparent height distribution determination module, the relation between the grinding clearance for determining according to described grinding clearance distribution determination module distributes and apparent height distributes and grinding clearance distributes, determines the height distribution of aluminum metal grid chip surface.
8. system according to claim 7, is characterized in that, described reaction determination module comprises:
Chemical reaction determination submodule, for determining the chemical reaction occurred when CMP grinds, comprise: the chemical reaction of the chemical reaction of the reaction of aluminium and surfactant, aluminium and oxidant, aluminium ion and chelating agent and the reaction rate constant respectively reacted, wherein the reaction of aluminium and surfactant is reversible reaction;
Machinery is removed reaction and is determined submodule, reacts, and reaction rate constant for determining in the lapping liquid that occurs when CMP grind that polishing particles is removed aluminum metal grid surface machinery;
The reaction of described reaction determination module synthetic chemistry determines that the relation of metal particle concentrations in the reaction and reaction rate constant determination product occurred when the grinding that submodule configures is determined in reaction rate of change and metal particle concentrations in time removed by submodule and machinery.
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| CN107153718B (en) * | 2016-03-02 | 2020-11-24 | 中国科学院微电子研究所 | Method and system for simulating surface topography of high-k metal gate |
| CN107633103A (en) * | 2016-07-15 | 2018-01-26 | 中国科学院微电子研究所 | CMP model parameter optimization method and device |
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| CN102799793A (en) * | 2012-07-27 | 2012-11-28 | 中国科学院微电子研究所 | Method and equipment for calculating chemical mechanical polishing removal rate |
| CN102832114A (en) * | 2012-09-11 | 2012-12-19 | 中国科学院微电子研究所 | Method and system for determining chemical mechanical polishing removal rate of aluminum metal gate |
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