CN103111755A - Bifocus laser processing system - Google Patents
Bifocus laser processing system Download PDFInfo
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- CN103111755A CN103111755A CN2013100407691A CN201310040769A CN103111755A CN 103111755 A CN103111755 A CN 103111755A CN 2013100407691 A CN2013100407691 A CN 2013100407691A CN 201310040769 A CN201310040769 A CN 201310040769A CN 103111755 A CN103111755 A CN 103111755A
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Abstract
The invention provides a bifocus laser processing system. The bifocus laser processing system comprises a spectroscope, a convex mirror and a focusing mirror. An incident beam is reflected through the spectroscope, and a second light beam is obtained; the second light beam is focused by the focusing mirror, and a first focus is formed; the incident beam is transmitted by the spectroscope, and a third light beam is obtained; the third light beam is reflected by the convex mirror, and then is transmitted by the spectroscope, and a fourth light beam is obtained; and the fourth light beam is focused by the focusing mirror, and a second focus is formed. According to the technical scheme, the first focus and the second focus are produced by the incident beam, and a focusing system with two focuses is formed. Distance between the first focus and the second focus can be changed by changing a curvature radius of the convex mirror, an energy ratio between the first focus and the second focus can be changed by adjusting a rotation angle of a wave plate, and processing speed and product quality are improved.
Description
Technical field
The present invention relates to laser field, disclose a kind of double focus laser system of processing for transparent materials such as LED wafer, pottery, silicon chip, glass.
Background technology
Laser cutting technique has now become a kind of industrial processes technology of maturation, with outside the main object of metal as cutting, becomes emerging research direction such as LED wafer, pottery, silicon chip and glass etc. for the cutting technique of cutting object except traditional.
We find in the process of research, and the transparent materials such as LED wafer are the laser cutting technique of cutting object is different from conventional art on principle laser cutting.As the LED wafer, its laser cutting mode is a kind of precut mode, because these materials form by the crystal grain crystallization, the end points pulse energy of laser spot can be upset the structure between crystal grain inside, form defective at intergranule, laser cutting itself do not separate cut workpiece, need the later stage to carry out sliver by the mode of vibration, the defective that produces when making cut workpiece along cutting is split, thereby cause the LED wafer to ftracture along laser scanning direction, finally complete cutting, this cutting mode also is referred to as the defective cutting.
Laser cutting method is conventional adopts the laser beam that sends as carbon dioxide-type or YAG type laser processor, and this laser beam is by optical element, and---lens or speculum of normally having given focal length---focuses on workpiece to be cut.
these lens are all for laser beam being concentrated on the single focus place of diameter minimum, and in the Laser cutting of reality, particularly in the cutting processing of the high-absorbility material such as LED wafer, the defective that single focus forms is limited, only to can complete the defective cutting less than the LED wafer of 150 micron thickness, when when cutting greater than the LED wafer of 150 microns, normally used mode is the cutting to same position carries out 2 times or more times is counted, the difference of each cutting is to allow focus successively change to achieve the goal along optical axis direction, greatly reduce like this efficient of laser equipment.In actual applications, because of the laser spot spot size between several microns to tens microns, the mechanical precision of equipment is difficult to guarantee that each defective is positioned at position, the identical cross section of material in cutting repeatedly, usually in later stage sliver process, can cause the even whole workpiece of transversal crack to damage.This just is difficult to guarantee yield rate and good cutting technique quality, causes forming waste product or substandard products.
Traditional bifocus produces and uses bifocal method, Fig. 1 is that the traditional double focus produces schematic diagram.Being positioned at diameter in incident beam equals part outside 2H and focuses on the first focus PF1 ' that the principal focal distance DF1 ' that is positioned at bifocal 1 locates; Being positioned at the part that diameter equals within 2H in incoming laser beam focuses on the second focus PF2 ' that is positioned at bifocal 1 principal focal distance DF2 ', this bifocal generation is because spot size surpasses 1 millimeter greater than distance before hundreds of micron and two focuses, so at present only at CO
2Laser is used Metal Cutting use.The focal length of the second focus that the employing bifocal obtains cannot change, and the laser power of two focuses is unmodifiable than also, can not be applied to Laser Micro-Machining.
Summary of the invention
The invention provides the double focus laser system of processing that a kind of focus spacing can change, have the technique effect that improves process velocity and improve the quality of products.
In order to reach above technique effect, technical scheme of the present invention is as follows:
A kind of double focus laser system of processing comprises wave plate, spectroscope, convex mirror and focus lamp;
Laser beam obtains the first light beam through described wave plate;
Described the first light beam obtains the second light beam through described spectroscope reflection, and described the second described focus lamp of light beam process is focused to the first focus on the optical axis that acts on the laser beam on workpiece to be processed;
Described the first light beam obtains the 3rd light beam through described spectroscope transmission, described the 3rd light beam is through described convex mirror reflection and obtain the 4th light beam through described spectroscope transmission again, and described the 4th described focus lamp of light beam process is focused to the second focus on the optical axis that acts on the laser beam on workpiece to be processed.
In order to reach technique effect better, also comprise wave plate, described wave plate is arranged on the light path of described spectroscopical incident light; Described wave plate is connected with the whirligig of controlling its rotation.
Preferably, the radius of curvature of described convex mirror is less than or equal to 100 meters.
Preferably, the focal length of described focus lamp more than or equal to 1 millimeter less than or equal to 100 millimeters.
Use technical scheme of the present invention, have following technique effect: (1) laser beam is successively through focusing on the first focus after spectroscope, focus lamp, laser beam focuses on the second focus through after spectroscope, convex mirror and focus lamp successively, forms the focusing system with two focuses; (2) described wave plate is connected with the whirligig of controlling its rotation, control device is controlled the anglec of rotation of wave plate, thereby in the situation that the laser power between laser beam general power constant change the first focus and the second focus, adapt to the processing of different demands, improve process velocity and improve the quality of products, application is extensive; (3) can also select according to actual needs the convex mirror of different curvature radius, thereby change distance between the first focus and the second focus.
Description of drawings
Fig. 1 is the schematic diagram that in prior art, bifocus produces;
The overall structure schematic diagram of Fig. 2 double focus laser system of processing of the present invention;
Fig. 3 is the cutting schematic diagram of single focal argon laser system of processing in prior art;
Fig. 4 is the cutting schematic diagram of double focus laser system of processing of the present invention.
The specific embodiment
Describe technical scheme of the present invention in detail below in conjunction with accompanying drawing and specific embodiment, be used for explaining technical scheme of the present invention in this illustrative examples of the present invention and explanation, but not as a limitation of the invention.
Double focus laser system of processing of the present invention comprises wave plate 21, spectroscope 22, convex mirror 23 and focus lamp 24, as shown in Figure 2.
Described the first light beam 11 obtains the second light beam 12 through described spectroscope 22 reflections, described the second light beam 12 described focus lamps 24 of process are focused to the first focus 31 on the optical axis that acts on the laser beam on workpiece to be processed 4, and described the first focus 31 is DF1 apart from the distance at described focus lamp 24 centers.
Described the first light beam 11 obtains the 3rd light beam 13 through described spectroscope 22 transmissions, described the 3rd light beam 13 is through described convex mirror 23 reflections and obtain the 4th light beam 14 through described spectroscope 22 transmissions again, described the 4th light beam 14 described focus lamps 24 of process are focused to the second focus 32 on the optical axis that acts on the laser beam on workpiece to be processed 4, and described the second focus 32 is DF2 apart from the distance at described focus lamp 24 centers.
The thickness of described workpiece to be processed 4 is more than or equal to 50 microns.
The radius of curvature of described convex mirror 23 is less than or equal to 100 meters, described convex mirror 23 can change according to demand different curvature radius convex mirror, the change of the radius of curvature of convex mirror can change the distance L between the first focus 31 and the second focus 32.
The focal length of described focus lamp 24 more than or equal to 1 millimeter less than or equal to 100 millimeters.
The first hot spot that described the first focus 31 forms on described workpiece to be processed 4, the second hot spot that described the second focus 32 forms on described workpiece to be processed 4, distance between described the first hot spot and described the second hot spot more than or equal to 1 micron less than or equal to 100 microns, the size of described the first hot spot and described the second hot spot all more than or equal to 1 micron less than or equal to 100 microns.
Described wave plate 21 is connected with the whirligig (not shown) of controlling its rotation, described whirligig (not shown) changes the power of laser between the first focus 31 and the second focus 32 by the anglec of rotation of controlling wave plate 21, the general power of laser beam is constant, adapts in the Laser Processing of different demands.
double focus laser system of processing of the present invention is especially for the transparent material good cutting effect such as LED wafer of thickness greater than 150 microns, when the laser beam axle passes through workpiece to be processed 4, form the first focus 31 and the second focus 32 on the cross section of workpiece to be processed 4, the highest in these two some power densities, because these materials form by the crystal grain crystallization, the end points pulse energy of laser spot can interrupt the structure between random crystal grain inside, form defective at intergranule, laser cutting itself do not separate cut workpiece to be processed 4, need the later stage to carry out sliver by the mode of vibration, the defective that produces when making cut workpiece to be processed 4 along cutting is split, thereby cause workpiece to be processed 4 circles to ftracture along laser scanning direction, finally complete cutting.
When the variation of the radius of curvature of described convex mirror 23 changes distance L between the first focus 31 and the second focus 32, with respect to the cutting schematic diagram of single focal argon laser system of processing (as shown in Figure 3,4 are workpiece to be processed) elongate the depth of focus and increased length-width ratio, the quality of cutting and the thickness that has improved machinable material can have been improved, as shown in Figure 4.
Use double focus laser system of processing of the present invention, can change according to actual needs the distance between the first focus and the second focus, also can change the power that focuses on the first focus and focus on the light beam of the second focus, improve process velocity and improve the quality of products, practicality is wide.
The above is the preferred embodiment of the present invention; should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the principle of the invention; can also make some improvements and modifications, these improvements and modifications also are considered as protection scope of the present invention.
Claims (4)
1. a double focus laser system of processing, is characterized in that: comprise spectroscope (22), convex mirror (23) and focus lamp (24);
Incident beam (5) obtains the second light beam (12) through described spectroscope (22) reflection, and described the second light beam (12) described focus lamp of process (24) is focused to the first focus (31) on the optical axis that acts on the light beam on workpiece to be processed (4);
Incident beam (5) obtains the 3rd light beam (13) through described spectroscope (22) transmission, described the 3rd light beam (13) is through described convex mirror (23) reflection and obtain the 4th light beam (14) through described spectroscope (22) transmission again, and described the 4th light beam (14) the described focus lamp of process (24) is focused to the second focus (32) on the optical axis that acts on the light beam on workpiece to be processed (4).
2. double focus laser system of processing according to claim 1, is characterized in that: also comprise wave plate (21);
Described wave plate (21) is arranged on the light path of incident light of described spectroscope (22);
Described wave plate (21) is connected with the whirligig of controlling its rotation.
3. double focus laser system of processing according to claim 1 and 2, it is characterized in that: the radius of curvature of described convex mirror (23) is less than or equal to 100 meters.
4. double focus laser system of processing according to claim 1 and 2 is characterized in that: the focal length of described focus lamp (24) more than or equal to 1 millimeter less than or equal to 100 millimeters.
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| CN2013100407691A CN103111755A (en) | 2013-02-01 | 2013-02-01 | Bifocus laser processing system |
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| CN2013100407691A CN103111755A (en) | 2013-02-01 | 2013-02-01 | Bifocus laser processing system |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104526892A (en) * | 2014-12-23 | 2015-04-22 | 苏州凯锝微电子有限公司 | Wafer cutting device |
| CN106493474A (en) * | 2016-12-19 | 2017-03-15 | 北京万恒镭特机电设备有限公司 | A kind of laser double-surface score device |
| CN106553000A (en) * | 2015-09-18 | 2017-04-05 | 镭射Apps株式会社 | Vertical multiple laser processing meanss |
| CN106695113A (en) * | 2016-12-08 | 2017-05-24 | 华中科技大学 | Axial bifocus lens |
| CN106950706A (en) * | 2017-04-26 | 2017-07-14 | 深圳迈进自动化科技有限公司 | A kind of light path device for being used to produce multiple depths of focus |
| CN106964894A (en) * | 2016-11-03 | 2017-07-21 | 苏州镭明激光科技有限公司 | A kind of variable double focus laser micromachining device |
| CN109702326A (en) * | 2019-01-16 | 2019-05-03 | 江苏大学 | A kind of devices and methods therefor improving laser boring depth |
| CN113634874A (en) * | 2021-09-23 | 2021-11-12 | 山东理工大学 | High-power water-conducting laser water optical coupling device with multi-focus lens |
| CN114535782A (en) * | 2016-11-15 | 2022-05-27 | 相干公司 | Method for cutting workpiece made of brittle material |
| CN114850656A (en) * | 2022-03-22 | 2022-08-05 | 中国人民解放军海军潜艇学院 | Device and method for reducing underwater resistance of metal component by using pulse laser |
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| JPH0780672A (en) * | 1993-09-10 | 1995-03-28 | Kawasaki Heavy Ind Ltd | Laser cutting method and its device |
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| CN203076784U (en) * | 2013-02-01 | 2013-07-24 | 武汉帝尔激光科技有限公司 | Double-focus laser machining system |
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Patent Citations (6)
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| JPH0780672A (en) * | 1993-09-10 | 1995-03-28 | Kawasaki Heavy Ind Ltd | Laser cutting method and its device |
| CN1160217A (en) * | 1995-12-22 | 1997-09-24 | 大宇电子株式会社 | Dual focusing optical pickup device |
| US20060261050A1 (en) * | 2003-05-30 | 2006-11-23 | Venkatakrishnan Krishnan | Focusing an optical beam to two foci |
| US20060113287A1 (en) * | 2004-11-26 | 2006-06-01 | Canon Kabushiki Kaisha | Laser cutting method |
| CN201845130U (en) * | 2010-09-17 | 2011-05-25 | 无锡荣兴科技有限公司 | Beam splitting system of laser processing equipment |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104526892A (en) * | 2014-12-23 | 2015-04-22 | 苏州凯锝微电子有限公司 | Wafer cutting device |
| CN106553000A (en) * | 2015-09-18 | 2017-04-05 | 镭射Apps株式会社 | Vertical multiple laser processing meanss |
| CN106553000B (en) * | 2015-09-18 | 2018-11-27 | 塔工程有限公司 | Vertical multiple laser processing unit |
| CN106964894A (en) * | 2016-11-03 | 2017-07-21 | 苏州镭明激光科技有限公司 | A kind of variable double focus laser micromachining device |
| CN114535782A (en) * | 2016-11-15 | 2022-05-27 | 相干公司 | Method for cutting workpiece made of brittle material |
| CN106695113A (en) * | 2016-12-08 | 2017-05-24 | 华中科技大学 | Axial bifocus lens |
| CN106493474A (en) * | 2016-12-19 | 2017-03-15 | 北京万恒镭特机电设备有限公司 | A kind of laser double-surface score device |
| CN106950706A (en) * | 2017-04-26 | 2017-07-14 | 深圳迈进自动化科技有限公司 | A kind of light path device for being used to produce multiple depths of focus |
| CN109702326A (en) * | 2019-01-16 | 2019-05-03 | 江苏大学 | A kind of devices and methods therefor improving laser boring depth |
| CN113634874A (en) * | 2021-09-23 | 2021-11-12 | 山东理工大学 | High-power water-conducting laser water optical coupling device with multi-focus lens |
| CN113634874B (en) * | 2021-09-23 | 2023-03-14 | 山东理工大学 | High-power water-conducting laser water optical coupling device with multi-focus lens |
| CN114850656A (en) * | 2022-03-22 | 2022-08-05 | 中国人民解放军海军潜艇学院 | Device and method for reducing underwater resistance of metal component by using pulse laser |
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Application publication date: 20130522 |