CN103107292A - Semiconductor device and electronic unit - Google Patents
Semiconductor device and electronic unit Download PDFInfo
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- CN103107292A CN103107292A CN201210445123.7A CN201210445123A CN103107292A CN 103107292 A CN103107292 A CN 103107292A CN 201210445123 A CN201210445123 A CN 201210445123A CN 103107292 A CN103107292 A CN 103107292A
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Formation Of Insulating Films (AREA)
Abstract
The invention discloses a semiconductor device and an electronic unit. Thin-film transistors and techniques for forming thin-film transistors (TFT) are disclosed. In some embodiments, there is provided a method of forming a TFT, comprising forming a body region of the TFT comprising an organic semiconducting material, and forming a protective layer comprising an organic insulating material. Forming the protective layer comprises contacting the body region of the TFT with a solution comprising the organic insulating material. The organic insulating material is a material that phase separates with the organic semiconducting material when the solution contacts the organic semiconducting material. In other embodiments, there is provided an apparatus comprising a TFT. The TFT comprises a body region comprising an organic semiconducting material and a protective layer contacting the body region and comprising an organic insulating material that, when a solution comprising the organic insulating material contacts the organic semiconducting material, causes the organic insulating material to phase separate with the organic semiconducting material.
Description
Technical field
The disclosure relates to semiconductor device, and this semiconductor device for example has the organic semi-conductor thin-film transistor (TFT) of use, and relates to the electronic unit that uses this semiconductor device.
Background technology
Various types of thin-film transistors (hereinafter referred to as " TFT ") are generally arranged, such as inorganic TFT and organic tft.In semiconductor layer (active layer), inorganic TFT uses inorganic material, and organic tft uses organic material.Particularly organic tft, attracted attention as the driving element that is used for flexible display (flexible display).
In organic tft, semiconductor layer is easily destroyed (dissolving) by organic solvent, therefore, is provided with diaphragm on semiconductor layer.It was suggested that a kind of use fluororesin (fluororesin) is as the technology (referring to for example uncensored Patent Application Publication of 2010-186768 Japan) of the material of this diaphragm.When using fluororesin by this way, for example form diaphragm on semiconductor layer by dissolving fluororesin and it is coated in fluorine-based solvent (fluorine-based solvent).
Summary of the invention
Fluororesin and fluorine-based solvent are normally expensive, and this has caused the increase of material cost.In addition, fluororesin has water proofing property (water repellency), and therefore, surface treatment is necessary when forming film on fluororesin.This has increased the quantity (quantity of processing) of operation, is disadvantageous.
Be desirable to provide that a kind of have can be with the semiconductor device of the diaphragm of low-cost and simple procedures (process) formation, and be desirable to provide a kind of electronic unit that comprises this semiconductor device.
In one embodiment; the method of a kind of formation thin-film transistor (TFT) is provided; described method comprises: form the body regions (body region) of TFT, and form the protective layer that comprises organic insulating material, wherein said body regions comprises organic semiconducting materials.The formation protective layer comprises: the body regions of TFT is contacted with the solution that comprises organic insulating material.Described organic insulating material is when solution contacts with organic semiconducting materials and the material of organic semiconducting materials PHASE SEPARATION (phase separate).
In another embodiment, provide a kind of equipment that comprises thin-film transistor (TFT).Described TFT comprises the body regions that comprises organic semiconducting materials and the protective layer that comprises organic insulating material and contact with body regions.Described organic insulating material is the material that makes organic insulating material and organic semiconducting materials PHASE SEPARATION when the solution that comprises organic insulating material contacts with organic semiconducting materials.
In yet another embodiment, provide a kind of equipment that comprises display screen, wherein, described display screen comprises a plurality of thin-film transistors (TFT).Each TFT in described a plurality of TFT comprises the body regions that comprises organic semiconducting materials and the protective layer that comprises organic insulating material and contact with body regions.Described organic insulating material is the material that makes organic insulating material and organic semiconducting materials PHASE SEPARATION when the solution that comprises organic insulating material contacts with organic semiconducting materials.
According to embodiment more of the present disclosure, diaphragm is located on semiconductor layer, and this diaphragm comprises and dissolves in organic solvent and cause organic insulating material with the organic semi-conductor PHASE SEPARATION.Therefore, in these embodiments, even when using cheap organic insulating material as the material of diaphragm, also can be suppressed at and form the destruction that organic solvent causes semiconductor layer during diaphragm.Compare with the situation that fluorine-based solvent forms diaphragm with using fluororesin, this can reduce material cost, and can eliminate or alleviate and carry out the surface-treated necessity of controlling for wetability after forming diaphragm.Thus, can form diaphragm with low-cost and simple procedures.
It should be understood that aforementioned general remark and following detailed description are exemplary, is to further illustrate for technology required for protection is provided.
Description of drawings
Accompanying drawing is included to provide further understanding of the disclosure, is merged in this specification and consists of the part of this specification.Accompanying drawing shows embodiment, and is used from specification one principle that present technique is described.
Fig. 1 shows the sectional drawing according to the illustrative configurations of the base plate (backplane) that comprises thin-film transistor (adopting the BGTC structure) of first embodiment of the present disclosure.
Fig. 2 A and 2B show the sectional drawing of the method for making base plate shown in Figure 1 with process sequence.
Fig. 3 A and 3B show the sectional drawing of the operation after Fig. 2 B.
Fig. 4 shows the sectional drawing of the operation after Fig. 3 B.
Fig. 5 shows the sectional drawing of the operation after Fig. 4.
Fig. 6 A and 6B show the sectional drawing of the process that forms printed panel shown in Figure 5.
Fig. 7 is the schematic diagram for the layer structure that is described in the diaphragm pattern that Fig. 5 and Fig. 6 A and the shown printed panel of 6B form.
Fig. 8 A and 8B show the sectional drawing of the operation after Fig. 5.
Fig. 9 A and 9B are for the sectional drawing of description according to the method for the manufacturing base plate of comparative example.
Figure 10 shows the photo according to comparative example membrane stage of semiconductor layer after diaphragm forms.
Figure 11 shows the photo according to example membrane stage of semiconductor layer after diaphragm forms of the first embodiment.
Figure 12 shows the sectional drawing of the operation after Fig. 8 B.
Figure 13 A to 13C shows the sectional drawing according to the process of the formation printed panel of modification 1.
Figure 14 A to 14D is the sectional drawing that shows according to the process of the formation printed panel of modification 2.
Figure 15 shows the sectional drawing according to the illustrative configurations of the base plate that comprises thin-film transistor (adopting the BGTC structure) of modification 3.
Figure 16 A to 16C is for the sectional drawing of describing the method for making base plate shown in Figure 15.
Figure 17 shows the sectional drawing according to the illustrative configurations of the base plate that comprises thin-film transistor (adopting the BGBC structure) of modification 4.
Figure 18 shows the sectional drawing according to the illustrative configurations of the base plate that comprises thin-film transistor (adopting the BGBC structure) of modification 5.
Figure 19 shows the sectional drawing according to the illustrative configurations of the base plate that comprises thin-film transistor (adopting the BGBC structure) of modification 6.
Figure 20 A to 20D is for the sectional drawing of describing the method for making base plate shown in Figure 19.
Figure 21 shows the sectional drawing according to the illustrative configurations of the base plate that comprises thin-film transistor (adopting the TGTC structure) of second embodiment of the present disclosure.
Figure 22 shows the sectional drawing according to the illustrative configurations of the base plate that comprises thin-film transistor (adopting the TGTC structure) of modification 7.
Figure 23 shows the sectional drawing according to the illustrative configurations of the base plate that comprises thin-film transistor (adopting the TGBC structure) of modification 8.
Figure 24 shows the sectional drawing according to the illustrative configurations of the base plate that comprises thin-film transistor (adopting the TGBC structure) of modification 9.
Figure 25 shows the schematic diagram according to the display driver circuit of the application example of the base plate in each embodiment etc.
Figure 26 shows the stereogram of outward appearance of the application example 1 of embodiment etc.
Figure 27 A and 27B are the stereograms that shows respectively the outward appearance of using example 2, that is, the outward appearance when Figure 27 A shows from top view, Figure 27 B shows the outward appearance when observing from the back side.
Figure 28 shows the stereogram of the outward appearance of using example 3.
Figure 29 shows the stereogram of the outward appearance of using example 4.
Figure 30 A to 30G is the diagram of using example 5, and is respectively the front view of open mode, the end view of open mode, front view, left side view, right side view, top view and the bottom view of closed condition.
Figure 31 A and 31B are the stereograms that shows respectively the outward appearance of using example 6.
Embodiment
Hereinafter with reference to accompanying drawing, embodiment of the present disclosure is elaborated.It should be noted, explanation will be carried out in the following order.
1. the first embodiment (example with base plate of TFT (adopt BGTC structure), this TFT have cause the diaphragm (also as interlayer dielectric) made from the material of organic semi-conductor PHASE SEPARATION)
2. modification 1 (forming the example of diaphragm by reverse offset printing)
3. modification 2 (forming the example of diaphragm by intaglio offset)
4. modification 3 (being provided with the example of interlayer dielectric on diaphragm)
5. the example of modification 4 (another TFT (adopt BGBC structure))
6. the example of modification 5 (another TFT (adopt BGBC structure), wherein be provided with interlayer dielectric on diaphragm)
7. modification 6 (allowing to utilize diaphragm to make semiconductor layer form the example of the TFT (adopting the BGBC structure) of pattern as mask)
8. (example with base plate of TFT (adopt TGTC structure), this TFT has and causes the diaphragm (also as gate insulator) made from the material of organic semi-conductor PHASE SEPARATION the second embodiment
9. modification 7 (being provided with the example of gate insulator on diaphragm)
10. the example of modification 8 (another TFT (adopt TGBC structure))
11. modification 9 (example of another TFT (adopting the TGBC structure) wherein is provided with gate insulator on diaphragm)
12. use example (being provided with separately the example of the electronic unit of base plate)
[the first embodiment]
[configuration]
Fig. 1 shows the sectional drawing of the illustrative configurations of the semiconductor device (comprising TFT11 and base plate 1) according to first embodiment of the present disclosure.Base plate 1 is for example the circuit board that is provided with for display driver (display driving), and for example comprises one or more TFT11.A TFT11 only is shown herein.
TFT11 has so-called bottom grid (BG) structure contacts (TC) structure (that is, having the BGTC structure) with so-called top organic tft.TFT11 comprises the interior gate electrode 12 of selective area on substrate 10.On this gate electrode 12, semiconductor layer 14 is provided with the gate insulator 13 that is inserted between gate electrode 12 and semiconductor layer 14.On gate insulator 13, semiconductor layer 14 is forming pattern in the selective area of (facing) gate electrode 12.On this semiconductor layer 14, be furnished with pair of source-drain electrode (source-drain electrode) 15a and 15b, be electrically connected to the part of semiconductor layer 14.
The gate voltage (Vg) that gate electrode 12 imposes on TFT11 by use is controlled the carrier density in semiconductor layer 14, and has the function as the distribution that current potential is provided.Gate electrode 12 can use the monofilm of being made by one of for example aluminium (Al), titanium (Ti), platinum (Pt), gold (Au), palladium (Pd), chromium (Cr), nickel (Ni), molybdenum (Mo), niobium (Nb), neodymium (Nd), rubidium (Rb), rhodium (Rh), silver (Ag), tantalum (Ta), tungsten (W), copper, indium (In) and tin (Sn) to consist of.As an alternative, gate electrode 12 also can use by two or more laminated films of making in these materials (laminated film) and consist of.
By applying gate voltage, semiconductor layer 14 forms raceway groove.Semiconductor layer 14 for example can be made by organic semiconductors such as three boundary's propyl group silylethynyl (TIPS) pentacenes and ethyl xanthene xanthene (ethyl PXX, ethyl-PXX) derivative.In addition, such as also using aphthacene, hexacene, heptacene, pyrene, bending any derivative in (chrysene), perylene, coronene, rubrene, polythiophene, polyacene, polyphenylene vinylene, polypyrrole, porphyrin, carbon nano-tube, fullerene, Graphene, metal phthalocyanine etc. or the mixture of two or more as organic semiconductor.
This pair of source- drain electrode 15a and 15b are used as source electrode or drain electrode separately, and are to use the conducting membrane material suitable with the top conducting membrane material of listing for gate electrode 12 to consist of.These sources- drain electrode 15a and 15b are arranged on semiconductor layer 14, be electrically connected to semiconductor layer 14 and each other electricity separate.
In having the TFT11 of above-mentioned configuration, be provided with diaphragm 16 on semiconductor layer 14.In the present embodiment, diaphragm 16 is formed and covers semiconductor layer 14 and source-drain electrode 15a and 15b.Diaphragm 16 is also as interlayer dielectric.Diaphragm 16 has towards the source-through hole (via hole) H1 of drain electrode 15b.The show electrode 17 that is located on diaphragm 16 is electrically connected to source-drain electrode 15b by this through hole H1.
Diaphragm 16 dissolves in the predetermined organic solvent.In addition; diaphragm 16 is by causing that the coating-type organic insulating material (that is, being dissolved in the organic insulating material that causes under the state of organic solvent with the organic semi-conductor PHASE SEPARATION) with the organic semi-conductor PHASE SEPARATION that consists of semiconductor layer 14 makes.As example, when using ethyl PXX derivative as the material of semiconductor layer 14, be applicable to the material of diaphragm 16 such as polymeric materials such as Poly-alpha-methylstyrenes (P α MS).As an alternative, when using the TIPS pentacene as the material of semiconductor layer 14, it is suitable using polymeric materials such as P α MS, polystyrene and cyclic olefine copolymer.Wish that any organic solvent in these organic insulating materials of dissolving is also the material that causes with the organic semi-conductor PHASE SEPARATION that consists of semiconductor layer 14.The example of this material comprises toluene and tetralin.As will be described in detail later, by above-mentioned organic insulating material is dissolved in organic solvent, and will remains on solution coating (or printing) under predetermined viscosity (drying regime) to semiconductor layer 14 and form diaphragm 16.It should be noted, after forming diaphragm 16, remove organic solvent by drying.And except above-mentioned organic insulating material, diaphragm 16 also can comprise for the fine particle that improves printing (printability), surfactant etc.
except above-mentioned material, the example of the organic insulating material that uses in diaphragm 16 also comprises polystyrene, Merlon, dimethyl silicone polymer, nylon, polyimides, cyclic olefine copolymer, epoxy polymer, cellulose, polyoxymethylenes, polyolefin polymer, polyethylene polymer, polyester polymers, polyether polymer, polyamide polymer, biodegradable plastic, amino resins, unsaturated polyester resin, dially phthalate resin, epoxy resin, polyimide resin, polyurethane resin, silicones and the copolymer that forms by making up various polymer units.Cause with semiconductor layer 14 in the material (that is the material that, has predetermined molecular weight) of the organic semi-conductor PHASE SEPARATION used can suitably select from these materials.The material of simultaneously, wishing diaphragm 16 is not water-based material (material with OH group).This is in order to reduce the destruction to semiconductor layer 14.
The thickness of diaphragm 16 can be for example that about 0.3 μ m is to about 10 μ m.In the present embodiment, due to this diaphragm 16, show the sufficient defencive function to semiconductor layer 14, there is no need to form separately interlayer dielectric.Therefore, suppress the deterioration of the characteristic of TFT11, and simplified manufacturing process.
When base plate 1 was used to display driver, show electrode 17 can be for example the pixel electrode that provides for each pixel.
[manufacture method]
Fig. 2 A to Fig. 8 B is for the diagram of describing the method for making base plate 1.Base plate 1 for example can followingly be made.
At first, as shown in Fig. 2 A, form gate electrode 12 in the selective area on substrate 10.Particularly, initial for example by sputtering at deposition above-mentioned conducting membrane material, for example copper on the whole surface on substrate 10.Then for example by utilizing photoetching process to carry out etching, conducting membrane material is patterned to reservation shape.
Next, as shown in Fig. 2 B, form gate insulator 13 on substrate 10.Particularly, for example apply above-mentioned gate insulator material, for example mixture of PVP solution and curing agent (melmac) on the whole surface on substrate 10 by being spin-coated on.Subsequently this mixture is carried out roasting (firing).
Subsequently, forming semiconductor layer 14 on gate insulator 13 makes it have a pattern.Particularly, at first, as shown in Figure 3A, such as forming the film of above-mentioned organic semiconductor (for example TIPS pentacene compound solution) by be coated with application pattern such as (cap coating) such as spin coating, dip-coating and cover on the whole surface of substrate 10.Then the film that forms is carried out drying.Next, as shown in Fig. 3 B, the semiconductor layer 14 of formation forms pattern by etching.Can utilize the printing processes such as silk screen printing, intaglio printing and ink jet printing except above-mentioned application pattern to form semiconductor layer 14.As an alternative, semiconductor layer 14 can utilize so-called shadow mask to form pattern by vacuum moulding machine.In addition, can only apply and form semiconductor layer 14 in selective area.In this case, in advance the presumptive area (not forming the zone of semiconductor layer) on the surface of gate insulator 13 is carried out water-proofing treatment, then semiconductor solution is coated on the surface of gate insulator 13.Therefore, do not need the part of semiconductor layer 14 to repel semiconductor solution.
Next, as shown in Figure 4, formation source-drain electrode 15a and 15b.Particularly, at first, for example by sputtering at the above-mentioned conducting membrane material of deposition on the whole surface on substrate 10.Then for example by utilizing photoetching process to carry out etching, the conducting membrane material that deposits is patterned to reservation shape.As an alternative, can utilize shadow mask by vacuum moulding machine, source- drain electrode 15a and 15b to be formed pattern.Still as an alternative, can be by coming formation source- drain electrode 15a and 15b utilizing such as intaglio offset (gravure offset printing) and oppositely progressively disconnect (step disconnection) after the film transfer method formation pattern such as offset printing (reverse offset printing) in a part of pattern.
(formation of diaphragm 16)
Next, for example form diaphragm 16 by printing process.Particularly, utilize the printed panel that has diaphragm ink layer 110a on flange (relief plate) 110 to make diaphragm 16 form pattern by transfer method (letterpress, letterpress printing), for example as shown in Figure 5.Herein, this printed panel is for example following preparation.Preparation has the flange 110 of the projection corresponding with predetermined pattern (diaphragm 16 is with the pattern that forms), as shown in Figure 6A.Diaphragm ink layer 110a is filled (coating) to this flange 110, as shown in Fig. 6 B.It should be noted, in the present embodiment, diaphragm 16 is used as interlayer dielectric, and has the through hole H1 that connects for the interlayer distribution.Therefore, in the pattern of diaphragm ink layer 110a, for example optionally remove towards the source-zone of drain electrode 15b.
But, in the printed panel shown in Fig. 6 B, wish that diaphragm ink layer 110a is maintained at following layer state.Namely; zone on the downside of diaphragm ink layer 110a (side of flange 110 is provided) is molecule high-load layer A; and the zone on face side (side opposite with the side that flange 110 is provided) is molecule low content layer B, as shown in Figure 7 schematically.In other words, wish in diaphragm ink layer 110a, organic insulating material is retained as that accumulation (precipitation) must more state on flange 110 sides than on face side.The viscosity of also wishing diaphragm ink layer 110a is set as the level that can keep this state.
So be transferred on semiconductor layer 14 and source- drain electrode 15a and 15b (Fig. 5) at the diaphragm ink layer 110a that forms with predetermined viscosity on flange 110.This makes and can realize hierarchy on semiconductor layer 14, forms the diaphragm 16 of being made by organic insulating material in hierarchy, as shown in Fig. 8 A and 8B.Particularly, diaphragm 16 forms by following principle.
In the present embodiment, diaphragm ink layer 110a is made by the solution that organic insulating material is dissolved in above-mentioned organic solvent, and this solution is retained as predetermined layer state and has predetermined viscosity.When the Surface Contact of this diaphragm ink layer 110a and semiconductor layer 14, following situation occurs.At first, near interface (contact surface) S between diaphragm ink layer 110a and semiconductor layer 14, the part on the face side of semiconductor layer 14 is because the organic solvent in diaphragm ink layer 110a begins dissolving.Be dissolved in organic semiconductor in organic solvent cause with diaphragm ink layer 110a in the PHASE SEPARATION of the organic insulating material (and organic solvent) that comprises.In a single day be dissolved in the PHASE SEPARATION that like this causes in organic solvent with diaphragm ink layer 110a due to organic semiconductor near the interface S between semiconductor layer 14 and diaphragm ink layer 110a, therefore suppressed the carrying out of organic solvent to the erosion of semiconductor layer 14.In other words, organic solvent only limits near surface to the erosion of semiconductor layer 14, can not arrive other zones.
Herein, use and not cause with the material of organic semi-conductor PHASE SEPARATION as the example of diaphragm material shown in Fig. 9 A and 9B, as the comparative example of the present embodiment.In this comparative example, as shown in Fig. 9 A, with the similar mode of the present embodiment, form gate electrode 102, gate insulator 103, semiconductor layer 104 and source-drain electrode 105a and 105b on substrate 101 after, form diaphragm by letterpress.But different from the present embodiment in this comparative example, the diaphragm ink layer 106a on flange 106 is made by the solution that comprises organic solvent and organic insulating material, and this organic insulating material does not cause and the organic semi-conductor PHASE SEPARATION.When the Surface Contact of this diaphragm ink layer 106a and semiconductor layer 104, the organic solvent in diaphragm ink layer 106a corrodes semiconductor layer 104.As a result, removed the regional 104a as part or all of semiconductor layer 104 as shown in Fig. 9 B, this makes semiconductor layer 104 can not play transistorized function.
Figure 10 shows in this comparative example and is forming the diaphragm observation image of semiconductor layer 104 afterwards.In this example, semiconductor layer 104 is etched, and has formed the regional 104a (that is, rectangle (pitch black part) zone) that does not form film.It should be noted, somber zone (gray area) is the zone that semiconductor layer 104 is kept.By contrast, in the example of the present embodiment, can find out, semiconductor layer 104 forms almost evenly, as shown in figure 11.In the example and comparative example of this embodiment, use ethyl PXX derivative respectively as the organic semiconductor of semiconductor layer 14 and 104, and adopt intaglio printing as the method for printing protective film.In addition, in the example of this embodiment, use the P α MS (molecular weight is 100,000) cause with ethyl PXX derivative PHASE SEPARATION as organic insulating material, and use toluene as organic solvent.In comparative example, use polystyrene (molecular weight is 4,000) as organic insulating material, and use toluene as organic solvent.It should be noted, the molecular weight of the polystyrene that uses in comparative example is little, does not therefore cause and the organic semi-conductor PHASE SEPARATION.
Therefore, in the present embodiment, even when forming diaphragm 16 with an organic solvent, the erosion of semiconductor layer 14 is also unlikely carried out.It should be noted, except above-mentioned letterpress, also can use intaglio printing, flexographic printing, intaglio offset, offset lithography, driography, oppositely offset printing, silk screen printing etc. as the method for printing protective film 16.To be described the intaglio offset in these methods and reverse offset printing subsequently.
After forming diaphragm 16, form through hole H1 by diaphragm 16 is carried out reflux (reflow), thereby form taper, as shown in figure 12.But, may only carry out where necessary this backflow (can in statu quo use the pattern of the diaphragm after the transfer shown in Fig. 8 A).It should be noted, except aforesaid way, also can use the etching that utilizes photoetching process, laser etc. as the technology that forms through hole H1.When using one of these technology, can form through hole H1 after forming diaphragm 16 by coating.
At last, for example form show electrode 17 on diaphragm 16 by sputtering at, with the inside of same covering through hole H1.Show electrode 17 is for example utilized photoetching process to form pattern by etching subsequently.This has completed base plate shown in Figure 11.
[function and effect]
In the base plate 1 of the present embodiment, when the gate electrode 12 that for example predetermined potential offered in TFT11, produce electric field (formation raceway groove) in semiconductor layer 14.Then, electric current flows between source- drain electrode 15a and 15b, thereby for example will offer show electrode 17 for the driving voltage that shows.
In the TFT11 of the base plate 1 of the present embodiment, use organic semiconductor in semiconductor layer 14, and therefore, semiconductor layer 14 is destroyed by organic solvent easily herein.For this TFT, usually use fluororesin to form the semiconductor protection film.In this case, by being dissolved in, fluororesin uses fluororesin in fluorine-based solvent.But these fluorine-based materials are expensive.In addition, because fluororesin has water proofing property, therefore need to carry out the surface treatment that is used for wetability control (wettability control) after forming diaphragm.In the present embodiment, when forming diaphragm 16 with an organic solvent.But, cause and the organic insulating material of the PHASE SEPARATION of semiconductor layer 14 owing to using in diaphragm 16, therefore suppressed carry out of organic solvent to the erosion of semiconductor layer 14, this can prevent the destruction to semiconductor layer 14.Compare with the situation of using fluorine-based material, this has reduced material cost, and it is necessary to have eliminated the surface-treated of carrying out after forming diaphragm for wetability control.
In addition, in the processing that forms diaphragm 16 (when shifting), as mentioned above, near the interface S between diaphragm 16 (diaphragm ink layer 110a) and semiconductor layer 14, the part of semiconductor layer 14 temporarily is in dissolved state.Remove subsequently organic solvent.Therefore, in the interface between semiconductor layer 14 and diaphragm 16, the contact area between these two layers increases (for example, it is uneven that the interface becomes), and this has strengthened the adhesiveness of diaphragm 16 with semiconductor layer 14.
In addition, in the base plate 1 of the present embodiment, diaphragm 16 is formed sufficient thickness, not only covers semiconductor layer 14 simultaneously, also covers source-drain electrode 15a and 15b.Therefore, diaphragm 16 is also as interlayer dielectric.In addition, diaphragm 16 (interlayer dielectric) be connected through hole H1 that the interlayer distribution connects and be utilized above-mentioned printing process and together form.Therefore, reduced formation diaphragm 16 operation afterwards.
In the present embodiment, as mentioned above, be provided with the diaphragm 16 that comprises organic insulating material on semiconductor layer 14, and use and to dissolve in organic solvent and to cause that material with the organic semi-conductor PHASE SEPARATION is as organic insulating material.Even when organic insulating material during for the protection of film 16, this also can be suppressed at and form the destruction of organic solvent to semiconductor layer 14 during diaphragm 16.Therefore, compare with the situation that fluorine-based solvent forms diaphragm with using fluororesin, the cost of material is low, and do not need to carry out the surface treatment for wetability control after forming diaphragm.Therefore, made diaphragm with low-cost and simple procedures.
The modification (modification 1 to 6) of this embodiment next will be described.It should be noted, hereinafter, the element identical with the element of this embodiment will be provided with the character identical with the character of this embodiment, and with suitably the description thereof will be omitted.
(modification 1)
In this embodiment, mentioned that various printing processes such as letterpress are as the technology that forms diaphragm 16.In this modification, reverse offset printing will be described as another example.When making the printed panel that is used for reverse offset printing, for example by forming diaphragm ink layer 110a on the whole surface that diaphragm ink layer 110a is coated in smooth cover layer (flat blanket) 111, for example as shown in FIG. 13A.Next, prepare to have the notch board (intaglio plate) 112 of the depressed part corresponding with predetermined pattern (diaphragm 16 is with the pattern that forms).Then the diaphragm ink layer 110a on cover layer 111 is pressed on the uneven surface of notch board 112, as shown in Figure 13 B.Subsequently, as shown in Figure 13 C, when removing cover layer 111 from notch board 112, remove the unnecessary part of diaphragm ink layer 110a by the convex surfaces of notch board 112.Therefore, diaphragm ink layer 110a is formed with predetermined pattern on cover layer 111.By with this as printed panel, diaphragm ink layer 110a is transferred on semiconductor layer 14 (and source- drain electrode 15a and 15b).With the same in the present embodiment, this makes and can form diaphragm 16 on semiconductor layer 14.
(modification 2)
In this modification, will intaglio offset another example as the method for printing protective film 16 be described.When making the printed panel that is used for intaglio offset, for example, at first prepare to have the notch board 113 of the depressed part corresponding with predetermined pattern (diaphragm 16 is with the pattern that forms), as shown in Figure 14 A.Then the depressed part of notch board 113 is filled diaphragm ink layer 110a, as shown in Figure 14B.Subsequently cover layer 114 is pressed on notch board 113, as shown in Figure 14 C.At last, remove cover layer 114 from notch board 113, thereby diaphragm ink layer 110a is transferred on cover layer 114, as shown in Figure 14 D.Like this, formed the printed panel that comprises cover layer 114 and diaphragm ink layer 110a.Utilize this, diaphragm ink layer 110a transferred on semiconductor layer 14 (and source- drain electrode 15a and 15b), thus with the present embodiment in the same, form diaphragm 16 on semiconductor layer 14.
(modification 3)
Figure 15 shows the sectional drawing according to the illustrative configurations of the semiconductor device of modification 3 (TFT11a and base plate 1a).Base plate 1a is for example the circuit board for display driver, and is similar to the base plate 1 of the first embodiment.In addition, TFT11a is the organic tft that adopts so-called BGTC structure, and is similar to the TFT11 of the first embodiment.In TFT11a, be provided with gate electrode 12 on substrate 10, and be provided with semiconductor layer 14 and make it towards this gate electrode 12, insert gate insulator 13 between gate electrode 12 and semiconductor layer 14.On semiconductor layer 14, arrange pair of source- drain electrode 15a and 15b, and form diaphragm 18.
But, in this modification, form diaphragm 18 only optionally to cover the zone (that is, the zone between source- drain electrode 15a and 15b) directly over semiconductor layer 14.And, be provided with interlayer dielectric 19 on diaphragm 18 and source-drain electrode 15a and 15b.Diaphragm 18 comprises the similar organic insulating material of diaphragm 16 with above-described embodiment.But the thickness of diaphragm 18 is for example about 50nm to about 1,000nm.For example can use polyethylene phenol as the material of interlayer dielectric 19.This interlayer dielectric 19 has through hole H1, and through hole H1 for example be used for to guarantee being electrically connected between show electrode 17 and source-drain electrode 15b.
Above-mentioned base plate 1a for example can be by following manufacturing.At first, to form gate electrode 12, gate insulator 13, semiconductor layer 14 and source- drain electrode 15a and 15b with the first similar mode of embodiment on substrate 10.Then printing protective film 18.
Particularly, at first, for example by letterpress, diaphragm ink layer 115a is transferred on semiconductor layer 14, as shown in Figure 16 A.Flange 115 optionally only has projection in the zone of semiconductor layer 14, and diaphragm ink layer 115a is formed on this projection.Diaphragm ink layer 115a comprise at the diaphragm ink layer 110a described in the first embodiment similar organic insulating material and organic solvent.In addition, wish that the viscosity that diaphragm ink layer 115a is set to have makes layer state remain the layer state similar to diaphragm ink layer 110a.As a result, diaphragm 18 only is formed in selective area on semiconductor layer 14, as shown in Figure 16 B.Diaphragm ink layer 115a comprises organic insulating material and the organic solvent similar to diaphragm ink layer 110a.Therefore, in this modification, based on the principle similar to the principle described in the first embodiment, suppressed organic solvent in diaphragm ink layer 115a to the carrying out of the erosion of semiconductor layer 14.
Next, as shown in Figure 16 C, for example apply by use or printing process forms interlayer dielectric 19 on diaphragm 18 and source-drain electrode 15a and 15b.At this moment, forming through hole H1 connects to be used for the interlayer distribution.Subsequently, carry out the backflow of interlayer dielectric 19, thereby form taper in the zone corresponding with through hole H1.
(modification 4)
Figure 17 shows the sectional drawing according to the illustrative configurations of the semiconductor device of modification 4 (TFT11b and base plate 1b).Base plate 1b is for example the circuit board for display driver, and is similar to the base plate 1 of the first embodiment.In addition, similar to the TFT11 of the first embodiment, TFT11b uses the organic semi-conductor organic tft in semiconductor layer 14, and is provided with the diaphragm 16 that also is used as interlayer dielectric on semiconductor layer 14.
But in this modification, TFT11b has the BGBC structure, and this BGBC structure has bottom grid (BG) structure and contacts (BC) structure with the bottom.In other words, in this modification, source- drain electrode 15a and 15b are electrically connected to the downside of semiconductor layer 14, and these are different from the first embodiment.Particularly, in TFT11b, be provided with gate electrode 12 on substrate 10, and semiconductor layer 14 is set to towards this gate electrode 12, wherein gate insulator 13 is inserted between gate electrode 12 and semiconductor layer 14.The state arrangement that pair of source- drain electrode 15a and 15b separate with electricity each other is between this semiconductor layer 14 and gate insulator 13.Diaphragm 16 is set to covering source- drain electrode 15a and 15b and semiconductor layer 14, and has through hole H1 in the zone of source-drain electrode 15b.In having this TFT11b of BGBC structure, based on the first similar principle of embodiment, can form diaphragm 16 on semiconductor layer 14.
(modification 5)
The diaphragm 18 of modification 3 and the configuration of interlayer dielectric 19 also are applicable to the TFT with BGBC structure described in modification 4.In other words, as shown in figure 18, the TFT11c that the base plate of this modification (base plate 1c) has the BGBC structure.In addition, only be provided with diaphragm 18 in the zone directly over semiconductor layer 14, and form interlayer dielectric 19 on diaphragm 18.In having this TFT11c of BGBC structure, based on the principle similar to the first embodiment, form diaphragm 18 on semiconductor layer 14.
(modification 6)
Modification 4 with 5 each described in the bottom that has contact the TFT of (BC) structure, can use diaphragm (diaphragm 18a) to carry out the pattern formation of semiconductor layer 14.Figure 19 shows the illustrative configurations according to the semiconductor device of modification 6 (TFT11d and base plate 1d).As shown in the figure, have in this modification in the TFT11d of BGBC structure, semiconductor layer 14 and diaphragm 18a form with identical shaped (identical patterns), have the structure that only optionally forms diaphragm 18a directly over semiconductor layer 14.Diaphragm 18a by with the first embodiment in the similar organic insulating material of diaphragm 16 make.Above-mentioned semiconductor layer 14 and diaphragm 18a are for example by following manufacturing.
At first, with the first similar mode of embodiment, form gate electrode 12 and gate insulator 13 on substrate 10.Subsequently, as shown in Figure 20 A, for example by sputter on whole surface form after, by forming pattern on gate insulator 13 formation source-drain electrode 15a and 15b.Next, as shown in Figure 20 B, for example form semiconductor layer 14 by coating or printing process on the whole surface of substrate 10.After this, as shown in Figure 20 C, such as forming diaphragm 18a by using in the selective area (towards the zone of gate electrode 12) of printing process on semiconductor layer 14 described in first embodiment etc.
After forming diaphragm 18a like this, use this diaphragm 18a to remove the unnecessary part of semiconductor layer 14 as mask, as shown in Figure 20 D.At this moment, use the solution of material (that is, can with the material of the organic semiconductor PHASE SEPARATION of semiconductor layer 14) only optionally dissolve the organic semiconductor of semiconductor layer 14 and not dissolve diaphragm 18a as etching solution.For example when the TIPS pentacene is used for semiconductor layer 14 and P α MS for the protection of film 18a, can use acetone, butanols etc. as this solution.In the TFT11d with BC structure, obtained and the first similar effect of embodiment, and can use diaphragm 18a to make semiconductor layer 14 form pattern, described in this modification.
[the second embodiment]
Figure 21 shows the sectional drawing according to the illustrative configurations of the semiconductor device of the second embodiment (TFT21 and base plate 2).Base plate 2 is for example the circuit board for display driver, and is similar to the base plate 1 of the first embodiment, and comprises TFT21.In the present embodiment, TFT21 has top grid (TG) structure different from the first embodiment, and herein, TFT21 has so-called TGTC structure.In this TFT21, form semiconductor layer 14 in the selective area on substrate 10, and the state arrangement pair of source of separating with electricity each other on this semiconductor layer 14-drain electrode 15a and 15b.Form diaphragm 20 and make it cover semiconductor layer 14 and source- drain electrode 15a and 15b, and arrange gate electrode 12 on this diaphragm 20.Form interlayer dielectric 24 on gate electrode 12.Diaphragm 20 and interlayer dielectric 24 have towards the source-through hole (via hole) H2 of drain electrode 15b.The show electrode 17 that is located on interlayer dielectric 24 is electrically connected to source-drain electrode 15b by this through hole H2.
In the present embodiment, with the same in the first embodiment, diaphragm 20 is by dissolving in organic solvent and can making with the organic insulating material of semiconductor layer 14 PHASE SEPARATION.Therefore, in the base plate 2 with the TFT21 that adopts the TGTC structure, use cheap organic insulating material to form diaphragm 20, suppressed simultaneously the destruction to semiconductor layer 14.Therefore, obtained and the first similar effect of embodiment.In addition, because diaphragm 20 also is used as gate insulator, therefore need to not form separately gate insulator after forming diaphragm 20, thereby reduce the operation after formation diaphragm 20.
(modification 7)
Figure 22 shows the sectional drawing according to the illustrative configurations of the semiconductor device of modification 7 (TFT21a and base plate 2a).Base plate 2a is for example the circuit board for display driver, and is similar to the base plate 2 of the second embodiment.Base plate 2a comprises the TFT21a with TGTC structure, and is similar to the TFT21 of the second embodiment.In addition, in TFT21a, only form diaphragm 22 in the zone directly over semiconductor layer 14, with the same in modification 3.In other words, in TFT21a, semiconductor layer 14 is located on substrate 10, and source- drain electrode 15a and 15b are arranged on this semiconductor layer 14.Diaphragm 22 is formed the zone (zone between source- drain electrode 15a and 15b) that only optionally covers directly over semiconductor layer 14.And, on diaphragm 22 and source- drain electrode 15a and 15b, gate insulator 23 is set.Gate electrode 12 is arranged on gate insulator 23, and interlayer dielectric 24 is formed thereon.Gate insulator 23 and interlayer dielectric 24 have through hole (via hole) H2.Diaphragm 22 comprises the organic insulating material with the materials similar of the diaphragm 16 of the first embodiment.Can use the material similar to above-mentioned gate insulator 13 as the material of gate insulator 23.
(modification 8)
Figure 23 shows the sectional drawing according to the illustrative configurations of the semiconductor device of modification 8 (TFT21b and base plate 2b).Base plate 2b is for example the circuit board for display driver, and is similar to the base plate 2 of the second embodiment.Similar to the TFT21 of the second embodiment, TFT21b uses the organic semi-conductor organic tft in semiconductor layer 14, and is provided with the diaphragm 20 that also is used as gate insulator on this semiconductor layer 14.
But in this modification, TFT21b adopts the TGBC structure, and this TGBC structure comprises that top grid (TG) structure contacts (BC) structure with the bottom.In other words, in this modification, source-drain electrode 15a is connected with the underside electrical of semiconductor layer 14 with 15b, and these are different from the second embodiment.Particularly, in TFT21b, providing source under electric released state each other- drain electrode 15a and 15b between substrate 10 and diaphragm 20.Diaphragm 20 is set to covering source- drain electrode 15a and 15b and semiconductor layer 14.In the TFT21b of TGBC structure, based on the first similar principle of embodiment, can form diaphragm 20 on semiconductor layer 14.
(modification 9)
The diaphragm 22 of modification 7 and the configuration of gate insulator 23 are applicable to the TFT with TGBC structure described in modification 8.In other words, as shown in figure 24, in the base plate (base plate 2c) of this modification, provide the TFT21c of TGB structure, only provide diaphragm 22 in the zone directly over semiconductor layer 14, and form gate insulator 23 thereon.In the TFT21c with TGBC structure, based on forming diaphragm 22 with the first similar principle of embodiment on semiconductor layer 14.
It should be noted, in the TFT of TGBC structure, can use diaphragm to form the pattern of semiconductor layer 14 as mask with the similar mode of the TFT11d of modification 6.In addition, not only in the BC structure but also in the TC structure (Fig. 1 and Figure 22) can use diaphragm as mask, semiconductor layer 14 to be formed pattern.But in the TC structure, semiconductor directly remains on below source- drain electrode 15a and 15b, and is not removed.
(application example)
This display driver circuit is located on substrate 10, and has pixel-driving circuit 140 in the D of viewing area.Being located at around the D of viewing area is signal-line driving circuit 120 and scan line drive circuit 130, is the driver that shows for image.
Pixel-driving circuit 140 is for example driven by active matrix system.In this pixel-driving circuit 140, arrange many signal line 120A on column direction, and upward arrange multi-strip scanning line 130A in the row direction.The crosspoint of every signal line 120A and every scan line 130A is corresponding to each pixel PXL.Every signal line 120A is connected to signal-line driving circuit 120, and picture signal offers each pixel PXL from this signal-line driving circuit 120 by holding wire 120A.Every scan line 130A is connected to scan line drive circuit 130, and sweep signal offers each pixel PXL from this scan line drive circuit 130 in turn by scan line 130A.
Above-mentioned display driver circuit (display) can be arranged on according on any the electronic unit in following application example 1 to 6.The electronic unit of all spectra this electronic unit be can be used as, television set, digital camera, laptop PC, the portable terminal device such as portable phone and smart phone, video cameras etc. comprised.In other words, base plate 1 is applicable to input or to be shown as in the picture signal of inside generation the electronic unit of any kind of static or moving images from the outside.
(using example 1)
Figure 26 shows the outward appearance according to the television set of application 1.This television set for example has the image display panel section 510 that comprises front panel 511 and filter glass 512.Image display panel section 510 is corresponding to aforementioned display device.
(using example 2)
Figure 27 A and 27B show the outward appearance according to the digital camera of application 2 separately.This digital camera for example for example comprises flash light emission section 521, display part 522, menu switch 523 and shutter release button 524.Display part 522 is as aforementioned display device.
(using example 3)
Figure 28 shows the outward appearance according to the laptop PC of application 3.This laptop PC is such as comprising main part 531, arranging and to be used for keyboard 532 and the display part 533 of input character etc.Display part 533 is as aforementioned display device.
(using example 4)
Figure 29 shows the outward appearance according to the video cameras of application 4.This video cameras for example comprises main part 541, be arranged in the front of this main part 541 with the camera lens 542 of the image of shot object, the beginning of using in shooting process and shutdown switch 543 with as the display part 544 of aforementioned display device.
(using example 5)
Figure 30 A to 30G shows the outward appearance according to the portable phone of application 5 separately.This portable phone is for example that upper shell 710 is connected the unit that connects by coupling part (hinge part) 730 with lower house, and comprises display 740, sub-display 750, picture lamp 760 and camera 770.Display 740 or sub-display 750 are corresponding to aforementioned display device.
(using example 6)
Figure 31 A and 31B show the outward appearance according to the smart phone of using example 6 separately.This smart phone for example comprises display part 810, non-display 820 and operating portion 830.Operating portion 830 can be formed on the surface identical with the surface (front) of display part 810, as shown in Figure 31 A, perhaps can be formed on the surperficial different surface (end face) from display part 810, as shown in Figure 31 B.
Above embodiment, modification and application example are illustrated, but can carry out various modifications to content of the present disclosure, and be not limited to these embodiment etc.For example, except at each layer described in embodiment etc., also can provide unshowned other layer or films.In addition, the application example according to the semiconductor device of embodiment of the present disclosure etc. is not limited to aforementioned display device.According to semiconductor device of the present disclosure applicable to the transducer with light electric transducer, RFID (radio-frequency (RF) identification) label, IC (integrated circuit), memory etc.
According to above-mentioned example embodiment of the present disclosure and modification, can realize following at least illustrative configuration.
The method of a kind of formation thin-film transistor (TFT) is provided in certain embodiments.Described method comprises: form the body regions of TFT, and form the protective layer that comprises organic insulating material, wherein said body regions comprises organic semiconducting materials.The formation protective layer comprises: the body regions of TFT is contacted with the solution that comprises described organic insulating material.Described organic insulating material is when described solution contacts with described organic semiconducting materials and the material of described organic semiconducting materials PHASE SEPARATION.
In addition or as an alternative, in some this embodiment, in described method, the body regions of TFT is contacted with solution comprise: the body regions of TFT is contacted with comprising the solution that is dissolved in the organic insulating material in organic solvent.
In addition or as an alternative, in some this embodiment, in described method, body regions is contacted with solution comprise: body regions is contacted with comprising the liquid solution that is dissolved in the organic insulating material in organic solvent.
In addition or as an alternative, in some this embodiment, described method also comprises: form source electrode and/or the drain electrode that contacts with the body regions of TFT for TFT.In addition, form the protective layer that protective layer comprises that formation contacts with described source electrode and/or drain electrode.
In addition or as an alternative; in some this embodiment; in described method; the formation body regions comprises: form body regions; make body regions to be had first surface when the first side of TFT is observed long-pending; and forming protective layer comprises: form protective layer, make protective layer be arranged on body regions when the first side of TFT is observed and to have a first surface long-pending.
In addition or as an alternative; in some this embodiment; described method also comprises: form the conducting terminal contact with the body regions of TFT for TFT, and the insulating barrier that contacts with conducting terminal of formation and protective layer, wherein said conducting terminal is source electrode or the drain electrode of TFT.
In addition or as an alternative, in some this embodiment, described method also comprises: form the 2nd TFT on the substrate identical with TFT.Forming the 2nd TFT comprises: form the second body regions of the 2nd TFT, formation comprises the second protective layer of organic insulating material, and the second conducting terminal that forms the 2nd TFT, and wherein said the second body regions comprises organic semiconducting materials.In described method, form insulating barrier and comprise: form the insulating barrier that contacts with conducting terminal with the protective layer of TFT and contact with the second conducting terminal with the second protective layer of the 2nd TFT.
In addition or as an alternative, in some this embodiment, in described method, form protective layer and also comprise: with body regions with remove organic solvent after solution contacts.
In addition or as an alternative, in some this embodiment, in described method, form protective layer and also comprise: form the ground floor that comprises described solution.Described ground floor comprises the first of the organic insulating material with first concentration and has the second portion of the organic insulating material of the second concentration.The second concentration is lower than the first concentration.In addition, in described method, the body regions of TFT is contacted with solution comprise: body regions is contacted with the second portion of ground floor.
In addition or as an alternative, in some this embodiment, in described method, form and comprise that the ground floor of described solution comprises: form the liquid that comprises described solution, and increase the viscosity of liquid.
In addition or as an alternative, in some this embodiment, in described method; forming body regions comprises according to pattern formation body regions; and form protective layer and comprise that described ground floor comprises described solution, and body regions is contacted with ground floor according to this pattern formation ground floor.
In addition or as an alternative, in some this embodiment, described method also comprises: form the conducting terminal of TFT, and the electrode that contacts with the conducting terminal of TFT of formation, wherein said conducting terminal is source electrode or the drain electrode of TFT.
In addition or as an alternative, in some this embodiment, in described method, form pixel electrode and comprise: a part that removes protective layer to be producing opening in protective layer, and forms at least a portion of electrode in opening.
In addition or as an alternative, in some this embodiment, described method also comprises: form the grid that separates with the body regions of TFT by gate insulator for TFT.
In addition or as an alternative, in some this embodiment, in described method, formation TFT is included in and forms TFT on substrate, and the grid that formation separates with body regions by gate insulator comprises: the position between the body regions of substrate and TFT forms grid.
In addition or as an alternative, in some this embodiment, described body regions has towards the first side of grid and second side opposite with the first side, and described method also comprises: the conducting terminal that forms the TFT that contacts with body regions, described conducting terminal is source electrode or the drain electrode of TFT, and contacts with body regions in the first side of body regions.
In addition or as an alternative, in some this embodiment, described method also comprises: be that TFT forms the grid that contacts with protective layer, described grid separates with the body regions of TFT by protective layer.
In addition or as an alternative; in some this embodiment; in described method; forming TFT comprises: form TFT on substrate; described body regions has towards the first side of substrate and second side opposite with the first side, and the grid that formation separates with body regions by protective layer comprises: the second side in body regions forms grid.
In addition or as an alternative, in some this embodiment, described method also comprises: form the conducting terminal of the TFT that contacts with body regions, described conducting terminal is source electrode or the drain electrode of TFT, and contacts with body regions in the first side of body regions.
In other embodiments, provide a kind of equipment that comprises thin-film transistor (TFT).Described TFT comprises the body regions that comprises organic semiconducting materials and the protective layer that comprises organic insulating material and contact with body regions.Described organic insulating material is to make the material of described organic insulating material and described organic semiconducting materials PHASE SEPARATION when the solution that comprises described organic insulating material contacts with described organic semiconducting materials.
In addition or as an alternative, in some this other embodiment, in described equipment, described organic semiconducting materials has the first molecular weight, described organic insulating material has the second molecular weight, and described the first molecular weight makes organic semiconducting materials and organic insulating material PHASE SEPARATION when contacting with the value that the second molecular weight has.
In addition or as an alternative, in some this other embodiment, in described equipment, described organic semiconducting materials has the first molecular weight, described organic insulating material has the second molecular weight, and described the second molecular weight is more than ten times of the first molecular weight.
In addition or as an alternative, in some this other embodiment, in described equipment, described the second molecular weight is more than 100 times of the first molecular weight.
In addition or as an alternative, in some this other embodiment, in described equipment, described organic semiconducting materials has the first molecular weight, described organic insulating material has the second molecular weight, and described the first molecular weight makes when the solution that comprises organic insulating material contacts with organic semiconducting materials with the value that the second molecular weight has, described organic insulating material and organic semiconducting materials PHASE SEPARATION.
In addition or as an alternative, in some this other embodiment, in described equipment, described organic semiconducting materials has the first molecular weight, described organic insulating material has the second molecular weight, and described the first molecular weight makes when comprising that the solution of organic insulating material contacts with organic semiconducting materials with the value that the second molecular weight has, dissolve at least in part organic semiconducting materials, and when mixing with organic semiconducting materials, described organic semiconducting materials and organic insulating material PHASE SEPARATION.
In addition or as an alternative, in some this other embodiment, in described equipment, described TFT also is included in the zone that forms the interface between body regions and protective layer, and described zone comprises the mixture of organic semiconducting materials and organic insulating material.
In addition or as an alternative, in some this other embodiment, in described equipment, described organic insulating material does not comprise the OH group.
In addition or as an alternative, in some this other embodiment, in described equipment, described TFT also comprises gate insulator and the grid that separates with body regions by gate insulator.
In addition or as an alternative, in some this other embodiment, described equipment also comprises substrate and the grid between substrate and body regions.
In addition or as an alternative, in some this other embodiment, in described equipment, described body regions has towards the first side of substrate and second side opposite with the first side, and described TFT also comprises conducting terminal.Described conducting terminal is source electrode or the drain electrode of TFT, and described conducting terminal contacts with body regions in the second side of body regions.
In addition or as an alternative, in some this other embodiment, described equipment also comprises substrate, and described TFT also comprise and protective layer contact and the grid that separates with body regions by protective layer.In the TFT of described body regions between substrate and grid.
In addition or as an alternative, in some this other embodiment, in described equipment, described body regions has towards the first side of substrate and second side opposite with the first side, and described TFT also comprises conducting terminal.Described conducting terminal is source electrode or the drain electrode of TFT, and described conducting terminal contacts with body regions in the first side of body regions.
In addition or as an alternative, in some this other embodiment, in described equipment, described TFT also comprises the conducting terminal that contacts and contact with protective layer with body regions.Described conducting terminal is source electrode or the drain electrode of TFT.
In addition or as an alternative, in some this other embodiment, in described equipment; described TFT also comprises pixel electrode; wherein, the first of described pixel electrode contacts with conducting terminal, and the second portion of pixel electrode separates with conducting terminal by protective layer.
In addition or as an alternative, in some this other embodiment, in described equipment, the second portion of described pixel electrode also separates with conducting terminal by insulating barrier.
In some other embodiment, provide a kind of equipment that comprises display screen.Described display screen comprises a plurality of thin-film transistors (TFT).Each TFT in described a plurality of TFT comprises the body regions that comprises organic semiconducting materials and the protective layer that comprises organic insulating material and contact with body regions.Described organic insulating material is the material that makes organic insulating material and organic semiconducting materials PHASE SEPARATION when the solution that comprises organic insulating material contacts with organic semiconducting materials.
In one embodiment, provide the method for a kind of formation thin-film transistor (TFT), described method comprises: form the body regions of TFT, and form the protective layer that comprises organic insulating material, wherein said body regions comprises organic semiconducting materials.The formation protective layer comprises: the body regions of TFT is contacted with solution.Described organic insulating material is when solution contacts with organic semiconducting materials and the material of organic semiconducting materials PHASE SEPARATION.
In another embodiment, provide a kind of equipment that comprises thin-film transistor (TFT).Described TFT comprises the body regions that comprises organic semiconducting materials and the protective layer that comprises organic insulating material and contact with body regions.Described organic semiconducting materials is the material that makes organic insulating material and organic semiconducting materials PHASE SEPARATION when the solution that comprises organic insulating material contacts with organic semiconducting materials.
In yet another embodiment, provide a kind of equipment that comprises display screen, wherein, described display screen comprises a plurality of thin-film transistors (TFT).Each TFT in described a plurality of TFT comprises the body regions that comprises organic semiconducting materials and the protective layer that comprises organic insulating material and contact with body regions.Described organic semiconducting materials is the material that makes organic insulating material and organic semiconducting materials PHASE SEPARATION when the solution that comprises organic insulating material contacts with organic semiconducting materials.
Claims (20)
1. the method for a formation thin-film transistor (TFT) comprising:
Form the body regions of TFT, described body regions comprises organic semiconducting materials; And
Formation comprises the protective layer of organic insulating material; wherein; form described protective layer and comprise that the body regions with described TFT contacts with the solution that comprises described organic insulating material, described organic insulating material is when described solution contacts with described organic semiconducting materials and the material of described organic semiconducting materials PHASE SEPARATION.
2. method according to claim 1 wherein, contacts the body regions of described TFT and comprises: the body regions of described TFT is contacted with comprising the liquid solution that is dissolved in the described organic insulating material in organic solvent with described solution.
3. method according to claim 1 also comprises:
Form source electrode and/or the drain electrode that contacts with the body regions of described TFT for described TFT,
Wherein, forming described protective layer comprises: form the described protective layer that contacts with described source electrode and/or drain electrode.
4. method according to claim 1, wherein:
Forming described body regions comprises: form described body regions so that described body regions to be had first surface when the first side of described TFT is observed long-pending; And
Forming described protective layer comprises: form described protective layer so that described protective layer is being arranged on described body regions when the first side of described TFT is observed, and it is long-pending to have a described first surface.
5. method according to claim 1 also comprises:
Form the conducting terminal that contacts with the body regions of described TFT for described TFT, described conducting terminal is source electrode or the drain electrode of described TFT;
Form the 2nd TFT on the substrate identical with described TFT, wherein, forming described the 2nd TFT comprises: the second body regions that forms described the 2nd TFT, formation comprises the second protective layer of described organic insulating material, and the second conducting terminal that forms described the 2nd TFT, wherein said the second body regions comprises described organic semiconducting materials; And
Form the insulating barrier contact with conducting terminal with the protective layer of described TFT and to contact with the second conducting terminal with the second protective layer of described the 2nd TFT.
6. method according to claim 1, wherein:
Forming described protective layer also comprises: form the ground floor that comprises described solution, described ground floor comprises the first and the second portion with described organic insulating material of the second concentration of the described organic insulating material with first concentration, and described the second concentration is lower than described the first concentration;
Formation comprises that the ground floor of described solution comprises: formation comprises the liquid of described solution, and increases the viscosity of described liquid;
The body regions of described TFT is contacted with described solution comprise: described body regions is contacted with the second portion of described ground floor; And
Forming described protective layer also comprises: with described body regions with remove described organic solvent after described solution contacts.
7. method according to claim 1, wherein:
Forming described body regions comprises: form described body regions according to pattern; And
Forming described protective layer comprises:
Form ground floor according to described pattern, described ground floor comprises described solution; And
Described body regions is contacted with described ground floor.
8. method according to claim 1 also comprises:
Form the conducting terminal of described TFT, described conducting terminal is source electrode or the drain electrode of described TFT; And
Form the electrode contact with the conducting terminal of described TFT, wherein, form described electrode and comprise: a part that removes described protective layer to be producing opening in described protective layer, and in described opening at least a portion of the described electrode of formation.
9. method according to claim 1, wherein:
Forming described TFT comprises: form described TFT on substrate;
Described body regions has towards the first side of grid and second side opposite with described the first side; And
Described method also comprises:
Position between the body regions of described substrate and described TFT is described TFT shape
The grid that one-tenth separates with the body regions of described TFT by gate insulator; And
Form the conducting terminal of the described TFT contact with described body regions, described conducting terminal is the source electrode of described TFT or drain electrode and contacts with described body regions in the first side of described body regions.
10. method according to claim 1, wherein:
Forming described TFT comprises: form described TFT on substrate;
Described body regions has towards the first side of described substrate and second side opposite with described the first side; And
Described method also comprises:
Be that described TFT forms the grid that contacts with described protective layer on the second side of described body regions, described grid separates with the body regions of described TFT by described protective layer; And
Form the conducting terminal of the described TFT contact with described body regions, described conducting terminal is the source electrode of described TFT or drain electrode and contacts with described body regions in the first side of described body regions.
11. an equipment comprises:
Thin-film transistor (TFT), this thin-film transistor comprises:
Body regions, this body regions comprises organic semiconducting materials; And
Protective layer, this protective layer comprise organic insulating material and contact with described body regions,
Wherein, described organic insulating material is to make the material of described organic insulating material and described organic semiconducting materials PHASE SEPARATION when the solution that comprises described organic insulating material contacts with described organic semiconducting materials.
12. equipment according to claim 11, wherein, described organic semiconducting materials has the first molecular weight, described organic insulating material has the second molecular weight, and described the first molecular weight makes described organic semiconducting materials and described organic insulating material PHASE SEPARATION when contacting with the value that described the second molecular weight has.
13. equipment according to claim 11, wherein, described organic semiconducting materials has the first molecular weight, and described organic insulating material has the second molecular weight, and described the second molecular weight is more than 100 times of described the first molecular weight.
14. equipment according to claim 11, wherein, described organic semiconducting materials has the first molecular weight, described organic insulating material has the second molecular weight, described the first molecular weight makes when comprising that the solution of described organic insulating material contacts with described organic semiconducting materials with the value that described the second molecular weight has, dissolve at least in part described organic semiconducting materials, and when mixing with described organic semiconducting materials, described organic semiconducting materials and described organic insulating material PHASE SEPARATION.
15. equipment according to claim 11, wherein, described TFT also is included in the zone that forms the interface between described body regions and described protective layer, and this zone comprises the mixture of described organic semiconducting materials and described organic insulating material.
16. equipment according to claim 11, wherein, described organic insulating material does not comprise the OH group.
17. equipment according to claim 11, wherein:
Described body regions has towards the first side of substrate and second side opposite with described the first side;
Described equipment also comprises substrate; And
Described TFT also comprises:
Gate insulator;
Grid separates with described body regions by described gate insulator, and between described substrate and described body regions; And
Conducting terminal, described conducting terminal are source electrode or the drain electrodes of described TFT, and described conducting terminal contacts with described body regions in the second side of described body regions.
18. equipment according to claim 11, wherein:
Described body regions has towards the first side of substrate and second side opposite with described the first side;
Described equipment also comprises substrate; And
Described TFT also comprises:
Grid contacts and separates with described body regions by described protective layer with described protective layer, in the TFT of described body regions between described substrate and described grid; And
Conducting terminal, described conducting terminal are source electrode or the drain electrodes of described TFT, and described conducting terminal contacts with described body regions in the first side of described body regions.
19. equipment according to claim 11, wherein, described TFT also comprises:
Conducting terminal contacts with described body regions and contacts with described protective layer, and described conducting terminal is source electrode or the drain electrode of described TFT; And
Pixel electrode, wherein, the first of described pixel electrode contacts with described conducting terminal, and the second portion of described pixel electrode separates with described conducting terminal by described protective layer,
Wherein, the second portion of described pixel electrode also separates with described conducting terminal by insulating barrier.
20. an equipment comprises:
Display screen, described display screen comprises:
A plurality of thin-film transistors (TFT), wherein, each TFT in described a plurality of TFT comprises:
Body regions, this body regions comprises organic semiconducting materials; And
Protective layer, this protective layer comprise organic insulating material and contact with described body regions,
Wherein, described organic insulating material is to make the material of described organic insulating material and described organic semiconducting materials PHASE SEPARATION when the solution that comprises described organic insulating material contacts with described organic semiconducting materials.
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| CN105393341A (en) * | 2013-07-19 | 2016-03-09 | 中央硝子株式会社 | Film-forming composition, film formed thereby, and method for manufacturing organic semiconductor element using same |
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| CN106024704A (en) * | 2016-05-27 | 2016-10-12 | 京东方科技集团股份有限公司 | Flexible display panel and manufacturing method thereof and flexible display device |
| CN106129001A (en) * | 2016-08-09 | 2016-11-16 | 上海交通大学 | A kind of array backboard circuit and preparation method thereof |
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| JP2013105950A (en) | 2011-11-15 | 2013-05-30 | Sony Corp | Semiconductor device and electronic equipment |
| JP6217162B2 (en) * | 2013-06-19 | 2017-10-25 | 凸版印刷株式会社 | THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, AND IMAGE DISPLAY DEVICE |
| JP6459263B2 (en) | 2013-07-19 | 2019-01-30 | セントラル硝子株式会社 | Film forming composition, film thereof, and method for producing organic semiconductor element using the same |
| JP6135427B2 (en) * | 2013-09-27 | 2017-05-31 | 凸版印刷株式会社 | Thin film transistor array and manufacturing method thereof |
| JP7219261B2 (en) | 2017-08-11 | 2023-02-07 | ボストン サイエンティフィック ニューロモデュレイション コーポレイション | Spinal cord stimulation system without paresthesia |
| US11338127B2 (en) | 2017-08-11 | 2022-05-24 | Boston Scientific Neuromodulation Corporation | Stimulation modes to adapt customized stimulation parameters for use in a spinal cord stimulation system |
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| JP5636626B2 (en) * | 2007-12-27 | 2014-12-10 | ソニー株式会社 | Method for forming semiconductor thin film and method for manufacturing thin film semiconductor device |
| KR20100070652A (en) * | 2008-12-18 | 2010-06-28 | 포항공과대학교 산학협력단 | A facile route to flexible all-organic field-effect transistors by all-solution process |
| JP2010186768A (en) | 2009-02-10 | 2010-08-26 | Brother Ind Ltd | Organic semiconductor element and method of manufacturing the same |
| JP5565609B2 (en) * | 2009-10-02 | 2014-08-06 | ソニー株式会社 | Manufacturing method of semiconductor device |
| JP2013105950A (en) | 2011-11-15 | 2013-05-30 | Sony Corp | Semiconductor device and electronic equipment |
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| CN105393341A (en) * | 2013-07-19 | 2016-03-09 | 中央硝子株式会社 | Film-forming composition, film formed thereby, and method for manufacturing organic semiconductor element using same |
| CN105393341B (en) * | 2013-07-19 | 2018-03-16 | 中央硝子株式会社 | Film formation composition and its film and the manufacture method using its organic semiconductor device |
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| CN105980872B (en) * | 2013-12-27 | 2021-04-02 | 新加坡国立大学 | Graphene-based magnetoresistive sensor |
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| CN106024704B (en) * | 2016-05-27 | 2019-03-12 | 京东方科技集团股份有限公司 | A kind of flexible display panels and preparation method thereof and flexible display apparatus |
| CN106129001A (en) * | 2016-08-09 | 2016-11-16 | 上海交通大学 | A kind of array backboard circuit and preparation method thereof |
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Also Published As
| Publication number | Publication date |
|---|---|
| US8866132B2 (en) | 2014-10-21 |
| JP2013105950A (en) | 2013-05-30 |
| US20140363919A1 (en) | 2014-12-11 |
| US20130119383A1 (en) | 2013-05-16 |
| US8999776B2 (en) | 2015-04-07 |
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Application publication date: 20130515 |