CN103094826A - Pumping coupled system of large-caliber diode pumping amplifier - Google Patents
Pumping coupled system of large-caliber diode pumping amplifier Download PDFInfo
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- CN103094826A CN103094826A CN2013100379704A CN201310037970A CN103094826A CN 103094826 A CN103094826 A CN 103094826A CN 2013100379704 A CN2013100379704 A CN 2013100379704A CN 201310037970 A CN201310037970 A CN 201310037970A CN 103094826 A CN103094826 A CN 103094826A
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Abstract
The invention provides a pumping coupled system of large-caliber diode pumping amplifier. A diode array pumping unit is composed of a plurality of planes and inscribed spheres in the diode area array in the pumping coupled system. The gaining medium is connected with the diode array pumping unit through a hollow conduit. The pumping coupled system of large-caliber diode pumping amplifier has the advantages of not only achieving the high coupling efficiency, but also gaining the pump field which is very uniform and in a flat-top distribution, and effectively and uniformly amplifying the light beam and solving the difficult problem of the pumping coupler in the macro-energy output diode pumping solid laser system.
Description
Technical field
The invention belongs to the diode-pumped solid laser technology field, be specifically related to a kind of pumping coupling system of heavy caliber diode pumping amplifier.
Background technology
Since the last century the nineties, laser diode (LD) and array thereof are obtained huge progress, and power output improves constantly, and cost is also descending.The crystal that is fit to diode laser pump also continues to bring out, thereby the correlative study of diode pumping solid laser (DPSSL) is developed rapidly.Compare with the solid state laser of conventional flash lamp pumping, DPSSL has the remarkable advantages such as high efficiency, high power, long-life, small size, so the heavy caliber amplifier of diode laser matrix (being called for short LDA) pumping can (IFE) research field be used more and more extensive at inertial confinement fusion (ICF) and inertial fusion.The luminous intensity of diode laser matrix only has 1-3kW/cm at present
2The left and right can not satisfy producing the required high pumping requirement of strength of intensity laser far away.For the coupling of heavy-duty diode array, people have proposed the coupled modes such as solid lens duct, hollow lens duct.Applications of succeeding on a lot of mini systems of solid lens duct coupled modes also has been successfully applied to French LUCIA, U.S. Mercury etc. greatly in laser aid as the hollow lens duct coupled modes of its improved procedure.Adopting the lens duct coupled modes is that coupling efficiency or pump field distribution all are improved, but can't realize the pump field that even flat-top distributes.In order further pump field to be carried out homogenize, must add even bundle device, not only increased coupling loss, also greatly increased the complexity of system.And, the application that only succeeds in more small-bore (several millimeters to number centimeter scale) amplifier at present of the coupled modes such as solid lens duct, hollow lens duct, but along with the propelling of the research causes such as IFE, the research of diode pumping heavy caliber (maximum to tens of centimeter scale) amplifier is used significant.And in diode-pumped systems, the cost of diode occupies larger proportion in system cost, surpasses 60%.Therefore, the system Construction cost be reduced, just high coupling efficiency need to be realized; And system will realize high-quality output, and the diode pumping amplifier need to be realized uniform pumping.Thereby the pumping coupling system research of diode pumping amplifier is significant.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of pumping coupling system of heavy caliber diode pumping amplifier.
The pumping coupling system of heavy caliber diode pumping amplifier of the present invention, be characterized in: in a plurality of planar diode face battle arrays in described pumping coupling system, the face of receiving is arranged and is formed the diode array pumping unit, and gain media is connected by hollow tubing conductor with the diode array pumping unit.
Described planar diode face battle array is comprised of a plurality of diode arrays, and the size of planar diode face battle array is more than or equal to the size in the required uniform pumping of amplifier district; In planar diode face battle array, diode bar bar quick shaft direction collimates, and the fast and slow axis direction of adjacent diode array is mutually vertical.
Described hollow tubing conductor has the truncated rectangular pyramids structure, and hollow tubing conductor is comprised of glass or the aluminum sheet metal plate of four polishings and silver-plated film or gold-plated film, is coated with medium protection film on silverskin or golden film again.
During in described diode face battle array, the face of receiving is arranged, can be by n * n mode symmetry arrangement, also can be by the mode asymmetric distribution of n * m(n ≠ m).
The metal materials such as the selection useable glass of described hollow tubing conductor or aluminium sheet can gold-plated film on it or the high reflectance metal film such as silverskin, can further plate medium protection film on metal film with the useful life of elongate catheter.
The pumping coupling system of heavy caliber diode pumping amplifier of the present invention, not only can realize high coupling efficiency, and can obtain flat-top distribution pump field very uniformly, can carry out efficient evenly amplifying to light beam, can solve preferably a pumping coupling difficult problem in macro-energy output diode pumped solid laser system.
Description of drawings
Fig. 1 is the structural representation of the pumping coupling system of heavy caliber diode pumping amplifier of the present invention;
Fig. 2 is the diode array pumping cellular construction schematic diagram in the present invention;
Fig. 3 is the diode face array element structural representation in the present invention;
In figure, 1. diode array pumping unit 2. hollow tubing conductor 3. gain media 4. diode face battle array 5. diode bar bar 6. diode arrays.
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in detail.
Fig. 1 is the structural representation of the pumping coupling system of heavy caliber diode pumping amplifier of the present invention.As can be seen from the figure: the pumping coupling system of heavy caliber diode pumping amplifier of the present invention comprises diode array pumping unit 1, hollow tubing conductor 2, gain media 3.Are connected with gain media by hollow tubing conductor 2 connections in diode array pumping unit 1, the center of gain media 3 is placed in the sphere center position of the face of receiving in diode face battle array.The conduit of hollow tubing conductor 2 for having the truncated rectangular pyramids structure, conduit is comprised of four polishings and silver-plated or gold-plated glass plate or metallic plate, and metallic plate can be aluminium, aluminium alloy and stainless steel etc.
Fig. 2 is the diode array pumping cellular construction schematic diagram in the present invention, and as can be seen from Figure 2: diode array pumping unit 1 is comprised of the face of receiving in large battle array 4 of a plurality of diodes.
Fig. 3 is the diode face array element structural representation in the present invention, and as can be seen from Figure 3: large battle array 4 of single diode is comprised of a plurality of diode arrays, and the size of large battle array 4 of diode is more than or equal to the required uniform pumping of amplifier district size.A plurality of diode bar bars 5 are parallel and rearrange compactly diode array 6, and wherein the quick shaft direction of each diode bar bar 5 collimates with lenticule, and the angle of divergence reduces greatly.In order to realize uniform pumping, the fast and slow axis direction of adjacent diode array 6 is mutually vertical.
Claims (3)
1. the pumping coupling system of a heavy caliber diode pumping amplifier, it is characterized in that: in a plurality of planar diode face battle arrays (4) in described pumping coupling system, the face of receiving is arranged and is formed diode array pumping unit (1), and gain media (3) is connected by hollow tubing conductor (2) with diode array pumping unit (1).
2. the pumping coupling system of heavy caliber diode pumping amplifier according to claim 1, it is characterized in that: described planar diode face battle array (4) is comprised of a plurality of diode arrays (6), and the size of planar diode face battle array (4) is more than or equal to the size in the required uniform pumping of amplifier district; In planar diode face battle array (4), diode bar bar (5) quick shaft direction collimates, and the fast and slow axis direction of adjacent diode array (6) is mutually vertical.
3. the pumping coupling system of heavy caliber diode pumping amplifier according to claim 1; it is characterized in that: described hollow tubing conductor (2) has the truncated rectangular pyramids structure; hollow tubing conductor (2) is comprised of glass or the aluminum sheet metal plate of four polishings and silver-plated film or gold-plated film, is coated with the media protection rete on silverskin or golden film again.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013100379704A CN103094826A (en) | 2013-01-31 | 2013-01-31 | Pumping coupled system of large-caliber diode pumping amplifier |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013100379704A CN103094826A (en) | 2013-01-31 | 2013-01-31 | Pumping coupled system of large-caliber diode pumping amplifier |
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| CN103094826A true CN103094826A (en) | 2013-05-08 |
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| CN2013100379704A Pending CN103094826A (en) | 2013-01-31 | 2013-01-31 | Pumping coupled system of large-caliber diode pumping amplifier |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106159659A (en) * | 2015-04-16 | 2016-11-23 | 道中道激光科技有限公司 | Laser diode-pumped solid state laser |
| EP3220494A4 (en) * | 2014-11-10 | 2018-07-11 | Sanhe Laserconn Tech Co., Ltd. | High-power semiconductor laser based on vcsel and optical convergence method therefor |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1204182A2 (en) * | 2000-11-02 | 2002-05-08 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor laser pumped solid state laser |
| CN201153188Y (en) * | 2007-12-28 | 2008-11-19 | 北京镭宝光电技术有限公司 | Diode-pumped sheet laser amplifier |
| CN201663344U (en) * | 2010-03-11 | 2010-12-01 | 重庆师范大学 | Reflection type pump system for LD (Laser Diode) end face pump |
| CN202602081U (en) * | 2012-05-11 | 2012-12-12 | 中国工程物理研究院激光聚变研究中心 | Coupling system of 100-kilowatt level area array LD array |
| CN203135204U (en) * | 2013-01-31 | 2013-08-14 | 中国工程物理研究院激光聚变研究中心 | Pumping coupling system of diode pumping amplifier with large caliber |
-
2013
- 2013-01-31 CN CN2013100379704A patent/CN103094826A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1204182A2 (en) * | 2000-11-02 | 2002-05-08 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor laser pumped solid state laser |
| CN201153188Y (en) * | 2007-12-28 | 2008-11-19 | 北京镭宝光电技术有限公司 | Diode-pumped sheet laser amplifier |
| CN201663344U (en) * | 2010-03-11 | 2010-12-01 | 重庆师范大学 | Reflection type pump system for LD (Laser Diode) end face pump |
| CN202602081U (en) * | 2012-05-11 | 2012-12-12 | 中国工程物理研究院激光聚变研究中心 | Coupling system of 100-kilowatt level area array LD array |
| CN203135204U (en) * | 2013-01-31 | 2013-08-14 | 中国工程物理研究院激光聚变研究中心 | Pumping coupling system of diode pumping amplifier with large caliber |
Non-Patent Citations (1)
| Title |
|---|
| 邓青华 等: "拟柱面激光二极管阵列端面泵浦方式提高固体激光器性能", 《强激光与粒子束》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3220494A4 (en) * | 2014-11-10 | 2018-07-11 | Sanhe Laserconn Tech Co., Ltd. | High-power semiconductor laser based on vcsel and optical convergence method therefor |
| CN106159659A (en) * | 2015-04-16 | 2016-11-23 | 道中道激光科技有限公司 | Laser diode-pumped solid state laser |
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Application publication date: 20130508 |