CN103091993B - Test mark and measuring method used in lithography machine lens thermal effect measuring - Google Patents
Test mark and measuring method used in lithography machine lens thermal effect measuring Download PDFInfo
- Publication number
- CN103091993B CN103091993B CN201110340789.1A CN201110340789A CN103091993B CN 103091993 B CN103091993 B CN 103091993B CN 201110340789 A CN201110340789 A CN 201110340789A CN 103091993 B CN103091993 B CN 103091993B
- Authority
- CN
- China
- Prior art keywords
- light intensity
- test badge
- focal plane
- thermal effect
- printing opacity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The invention relates to a test mark which has a square shape. A translucent square hole is provided at the center of the test mark. Square frames with certain widths are sequentially formed from the center to the outer part. From the translucent square hole to the most outer square frame, translucent areas and non-translucent areas are alternately provided. From the most outer square frame to the translucent square hole, the translucent area is gradually increased. The invention also provides a lithography machine lens thermal effect measuring method adopting the test mark. The test mark is positioned on a mask. The test mark is irradiated by a light beam and forms a test mark image on a workbench through a projection objective lens. A light intensity sensor is used for detecting the light intensity at the test mark. The method comprises the steps that: the relationship between the light intensity and the drift of the projection objective lens focal plane is pre-standardized; thermal effect measuring is carried out; focal plane drift data at various moments of thermal effect measuring is determined; and parameters of a lens thermal effect double exponentinal model is calculated by fitting.
Description
Technical field
The present invention relates to the lens effect fields of measurement, the lens effect particularly relating to projection lens of lithography machine is measured.
Background technology
The lens effect refers to that lens are heated and produces deformation and the phenomenon that causes image quality to change.In projection aligner's design, the lens effect that long-time volume production causes is very important, and vertical thermal effect can cause multiplying power, distortion picture element of Denging changes; And Axial Thermal effect can cause focal plane, the picture elements such as the curvature of field change, and these changes all can have influence on the key indexs such as consistency of line width CDU and alignment precision.
Therefore, the software systems of litho machine need to be designed with the mechanism correcting thermal effect, and this mechanism needs to measure in advance and demarcates the relation that picture element changes with the heat time, and this relation generally describes with following biexponential model:
Heating process:
Cooling procedure:
.
Wherein
,
represent the change of heating process, cooling procedure picture element respectively,
,
represent the scale factor of heating process, cooling procedure respectively,
,
represent the time constant of heating process, cooling procedure respectively,
,
,
for treating the parameter of matching.
In prior art, the method measuring the lens effect has two kinds: exposure is measured and aerial image sensor measurement.Exposure mensuration be: exposure light source heating lens process in not in the same time, silicon chip exposes specific markers, until lens heat is saturated, alignment system or microscope is utilized to read mark measuring position after development, then model calculating is carried out, obtain the picture element in each moment, and then simulate the parameter of biexponential model.The shortcoming of this method is: the thermal effect cannot measuring cooling stage, and the impact of technological factor is grown, is easily subject to measuring period.US Patent No. 5998071 just discloses a kind of method exposing measurement the lens effect.Aerial image sensor measurement method is: lens heat or in cooling procedure, needing the moment usage space image-position sensor of sampling picture element to measure mask plane mark, calculating picture element, and then simulating the coefficient of biexponential model.The shortcoming of this method is: need to gather multi-group data, and measuring speed is slow, to configure a set of aerial image sensor cost high.
It is long all to there is measuring process in above-mentioned two kinds of methods, and need long-time shortcoming of interrupting heating process or cooling procedure, it is low that biexponential model calculates accuracy.
Summary of the invention
The technical problem to be solved in the present invention is that the lens effect measuring process needs to interrupt the heating of lens or cooling procedure, Measuring Time is long.In order to solve the problems of the technologies described above, the invention provides a kind of test badge, it is characterized in that, described test badge is square; Described test badge center is printing opacity square hole, is outwards followed successively by the square frame with one fixed width by center; From described printing opacity square hole to outermost square frame, photic zone and alternatively non-transparent district are alternately; From outermost printing opacity square frame to described printing opacity square hole, described photic zone area increases gradually.
Further, the area of described printing opacity square hole is not less than 1/4th of described test badge area.
Further, the size of described outermost printing opacity square frame and litho machine similar resolution.
Further, from described outermost printing opacity square frame to described printing opacity square hole, described photic zone area becomes geometric ratio to increase.
Further, multiple described test badge is the distribution in matrix array on mask, for measuring the thermal effect of the curvature of field and astigmatism.
A kind of litho machine the lens effect measuring method using described test badge, described test badge is positioned on mask, described test badge forms test badge picture by light beam irradiation via projection objective in work stage, light intensity sensor, for detecting the light intensity at described test badge picture place, comprises the following steps: demarcate in advance the relation that described light intensity and described projection objective focal plane are drifted about; Carry out thermal effect measurement, be included in the heating of described lens or cooling procedure, when needs carry out focal plane data acquisition, described light intensity sensor is sampled to described light intensity, terminates until measure; Determine each moment focal plane drift data in the measurement of described thermal effect, the Fitting Calculation goes out the parameter of the lens effect biexponential model.
Wherein, described pre-demarcation comprises the following steps: step one, uploads described mask, and mobile described work stage is to nominal focal surface position; Step 2, moves axially described work stage in the focal depth range near described nominal focal surface position, and described light intensity sensor is to described light intensity continuous sampling; Step 3, records first group of axial location of light intensity described in first group and described work stage, obtains the first actual measurement focal plane; Step 4, using described first actual measurement focal plane as the described nominal focal surface of step one, repeating said steps one to step 3, records second group of axial location of second group of decide light intensity and described work stage; Step 5, all deducts described first actual measurement focal plane, obtains the relation that described in described second group, light intensity and focal plane drift about by described second group of axial location.
Further, the described method determining each moment focal plane drift data in the measurement of described thermal effect is the relation of being drifted about by described light intensity and the described projection objective focal plane of described pre-demarcation, utilizes cubic spline interpolation and obtains.
Further, the size of described test badge is close with the photosensitive diameter of described light intensity sensor.
Further, the region of described mask except described test badge is photic zone.
Further, described test badge is multiple, and multiple described test badge is the distribution in matrix array on described mask.
The invention has the advantages that: without the need to technique exposure, measuring speed is fast, have an impact very little, and cost is low to lens heating and cooling process, be convenient to further expand the measurement for the curvature of field and astigmatism thermal effect and demarcation.
Accompanying drawing explanation
Can be further understood by following detailed Description Of The Invention and institute's accompanying drawings about the advantages and spirit of the present invention.
Fig. 1 is the structural representation of projection mask aligner's optical system;
Fig. 2 is the structural representation of the test badge that the present invention measures for litho machine the lens effect;
Fig. 3 is that in litho machine the lens effect measuring method of the present invention, light intensity sensor records light intensity and work stage position relationship curve map;
Fig. 4 is that in litho machine the lens effect measuring method of the present invention, light intensity sensor records light intensity and focal plane and to drift about graph of relation;
Fig. 5 is the mark array schematic diagram of the test badge composition that the present invention measures for litho machine the lens effect.
Embodiment
Specific embodiments of the invention are described in detail below in conjunction with accompanying drawing.
Shown in Figure 1, the optical system of projection mask aligner comprises successively along optical axis direction: mask 1, projection objective 2, work stage 3.Mask having the test badge 4 of the lens effect for measuring projection objective 2, work stage 3 being placed with light intensity sensor 5, for carrying out light intensity detection to test badge 4 imaging.
The present embodiment is described to the measurement of focal plane thermal effect mainly for the axis of lens.
Figure 2 shows that the concrete structure of test badge 4 of the present invention.In the present embodiment, this mark is specially the centrosymmetric image mark that photic zone and alternatively non-transparent district replace, and mark center is a printing opacity square hole 6, is outwards followed successively by the square frame with one fixed width by center.This mark white is photic zone, and black is alternatively non-transparent district.The size of whole mark is close with the photosensitive diameter of light intensity sensor 5, and ecto-entad photic zone size increases gradually, and preferred situation increases for becoming geometric ratio, and concrete ratio can adjust according to actual effect.The area of printing opacity square hole 6 is not less than 1/4 of whole test badge 4 area, and the size of outermost photic zone 7 is consistent with litho machine limiting resolution.
After litho machine is integrated, the relation of drifting about according to the focal plane of following process to light intensity and projection objective 2 is demarcated in advance:
Step 1, uploads the mask 1 with test badge 4, and the position of focal plane of travelling workpiece platform 3 to technique exposure test calibration, is set to nominal focal surface position, light intensity sensor 5 is placed in the image space of test badge 4;
Step 2, in the approximate focal depth range near nominal focal surface position, moves axially work stage 3, the continuous sampling of light intensity sensor 5 pairs of test badge 4 imagings;
Step 3, in sampling process, the light intensity signal of record light intensity sensor 5, is designated as first group of light intensity, and the axial location of record work stage 3, is designated as first group of axial location, obtains the relation curve of light intensity signal and work stage axial location;
The light intensity signal obtained and the relation curve of work stage axial location shown in Figure 3, Curve Maximization point and axial location corresponding to light intensity maximal value are focal plane, are designated as the first actual measurement focal plane.When out of focus, light intensity sensor records light intensity value and can reduce, and the particular design of test badge shown in Fig. 2 can improve the susceptibility of light intensity sensor measured value to out of focus, and then improves measuring accuracy.
Step 4, the first actual measurement focal plane determined with step 3 is nominal focal surface, repeats step 2 to 3, obtains second group of light intensity and second group of axial location;
Step 5, after the second group of axial location recorded step 4 all deducts the first actual measurement focal plane, obtains light intensity sensor and records the relation that light intensity and focal plane drift about, as shown in Figure 4.
After pre-demarcation terminates, carry out thermal effect measurement.In lens heating or cooling procedure, need the moment of carrying out focal plane data acquisition, use light intensity sensor to measure a light intensity value and record being marked as image position, terminate until measure.
According to the relation that light intensity and the focal plane of aforementioned pre-demarcation drift about, utilize cubic spline interpolation, namely by a smooth curve of a series of shape value point, the process of curvilinear function group is mathematically drawn by solving three curved Matrix division, determine each moment focal plane drift data recorded in measuring process, and then the Fitting Calculation goes out the parameter of thermal effect biexponential model needs, i.e. time Summing Factor proportionality constant.Described the lens effect biexponential model is
and
，
Wherein
,
represent the change of heating process, cooling procedure picture element respectively,
,
represent the scale factor of heating process, cooling procedure respectively,
,
represent the time constant of heating process, cooling procedure respectively, the parameter of matching is scale factor and time constant.
Photic zone can be arranged in the region of the mask that this method relates to except test badge as far as possible, to facilitate the heating process of lens.
Shown in Figure 5, the present embodiment can further expand, and arranges that multi-point sampler marks according to imaging viewing field size on mask, distributes, make test badge be covered with whole visual field in matrix array, and shown in Fig. 5 is the mark array of 5 × 5.Based on aforementioned same principle, the focal plane according to test badge every in visual field drifts about, then can the thermal effect of the survey calculation curvature of field and astigmatism.
Just preferred embodiment of the present invention described in this instructions, above embodiment is only in order to illustrate technical scheme of the present invention but not limitation of the present invention.All those skilled in the art, all should be within the scope of the present invention under this invention's idea by the available technical scheme of logical analysis, reasoning, or a limited experiment.
Claims (8)
1. a test badge, is applied to the thermal effect fields of measurement of lens, it is characterized in that,
Described test badge is square;
Described test badge center is printing opacity square hole, is outwards followed successively by the square frame with one fixed width by center;
From described printing opacity square hole to outermost square frame, photic zone and alternatively non-transparent district are alternately;
From outermost printing opacity square frame to described printing opacity square hole, described photic zone area increases gradually;
The size of whole described mark is close with the photosensitive diameter of light intensity sensor, and the area of described printing opacity square hole is not less than 1/4th of described test badge area, the size of described outermost printing opacity square frame and litho machine similar resolution.
2. test badge according to claim 1, is characterized in that, from described outermost printing opacity square frame to described printing opacity square hole, described photic zone area becomes geometric ratio to increase.
3. test badge according to claim 1, is characterized in that, multiple described test badge is the distribution in matrix array on mask, for measuring the thermal effect of the curvature of field and astigmatism.
4. one kind uses the litho machine the lens effect measuring method of test badge described in claim 1, described test badge is positioned on mask, described test badge forms test badge picture by light beam irradiation via projection objective in work stage, light intensity sensor, for detecting the light intensity at described test badge picture place, comprises the following steps:
The relation that described light intensity and described projection objective focal plane are drifted about is demarcated in advance;
Carry out thermal effect measurement, be included in the heating of described lens or cooling procedure, when needs carry out focal plane data acquisition, described light intensity sensor is sampled to described light intensity, terminates until measure;
Determine each moment focal plane drift data in the measurement of described thermal effect, the Fitting Calculation goes out the parameter of the lens effect biexponential model.
5. measuring method according to claim 4, is characterized in that, described pre-demarcation comprises the following steps:
Step one, uploads described mask, and mobile described work stage is to nominal focal surface position;
Step 2, moves axially described work stage in the focal depth range near described nominal focal surface position, and described light intensity sensor is to described light intensity continuous sampling;
Step 3, records first group of axial location of light intensity described in first group and described work stage, obtains the first actual measurement focal plane;
Step 4, using described first actual measurement focal plane as the described nominal focal surface of step one, repeating said steps one to step 3, records second group of axial location of light intensity described in second group and described work stage;
Step 5, all deducts described first actual measurement focal plane, obtains the relation that described in described second group, light intensity and focal plane drift about by described second group of axial location.
6. measuring method according to claim 4, it is characterized in that, the described method determining each moment focal plane drift data in the measurement of described thermal effect is the relation of being drifted about by described light intensity and the described projection objective focal plane of described pre-demarcation, utilizes cubic spline interpolation and obtains.
7. measuring method according to claim 4, is characterized in that, the region of described mask except described test badge is photic zone.
8. measuring method according to claim 4, is characterized in that, described test badge is multiple, and multiple described test badge is the distribution in matrix array on described mask.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110340789.1A CN103091993B (en) | 2011-11-02 | 2011-11-02 | Test mark and measuring method used in lithography machine lens thermal effect measuring |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110340789.1A CN103091993B (en) | 2011-11-02 | 2011-11-02 | Test mark and measuring method used in lithography machine lens thermal effect measuring |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103091993A CN103091993A (en) | 2013-05-08 |
| CN103091993B true CN103091993B (en) | 2015-02-11 |
Family
ID=48204737
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110340789.1A Active CN103091993B (en) | 2011-11-02 | 2011-11-02 | Test mark and measuring method used in lithography machine lens thermal effect measuring |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103091993B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103616166B (en) * | 2013-12-04 | 2016-08-17 | 中国科学院光电技术研究所 | Projection objective focal plane shape measuring and marking device and application |
| US10506206B2 (en) | 2015-05-06 | 2019-12-10 | Dolby Laboratories Licensing Corporation | Thermal compensation in image projection |
| CN105301035B (en) * | 2015-11-09 | 2017-10-31 | 中国科学院长春光学精密机械与物理研究所 | Photoetching projection objective lens fuel factor appraisal procedure |
| US10775707B2 (en) * | 2016-10-07 | 2020-09-15 | Asml Netherlands B.V. | Lithographic apparatus and method |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4326805A (en) * | 1980-04-11 | 1982-04-27 | Bell Telephone Laboratories, Incorporated | Method and apparatus for aligning mask and wafer members |
| WO2003021352A1 (en) * | 2001-08-31 | 2003-03-13 | Canon Kabushiki Kaisha | Reticle and optical characteristic measuring method |
| CN100492180C (en) * | 2007-07-10 | 2009-05-27 | 上海微电子装备有限公司 | Projection objective detecting method |
| CN101477315B (en) * | 2009-01-20 | 2010-10-20 | 上海微电子装备有限公司 | Measuring method and apparatus for mask bench scanning inclination |
| JP2011003605A (en) * | 2009-06-16 | 2011-01-06 | Hitachi High-Technologies Corp | Proximity aligner, alignment method for proximity aligner, and manufacturing method for display panel board |
| CN101799640B (en) * | 2010-03-10 | 2012-03-21 | 中国科学院光电技术研究所 | Device and method for determining optimal focal plane position of photoetching machine |
-
2011
- 2011-11-02 CN CN201110340789.1A patent/CN103091993B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN103091993A (en) | 2013-05-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8472013B2 (en) | Refractive index distribution measurement method and apparatus that measure transmission wavefronts of a test object immersed in different media having refractive index lower than that of the test object | |
| CN101551594B (en) | System and method for detecting odd aberration of projection objective of photoetching machine based on dipolar illumination | |
| CN102607820B (en) | Method for measuring focal length of micro-lens array | |
| CN105606222A (en) | Flame three-dimensional temperature field measurement imaging device, measuring device and measuring method | |
| CN102253606B (en) | System and method for carrying out in-situ detection on odd aberration of projection objective for photoetching machines | |
| CN103091993B (en) | Test mark and measuring method used in lithography machine lens thermal effect measuring | |
| CN106644105B (en) | Wavefront sensor, detection method and system based on double helix point spread function | |
| CN106165078A (en) | Δ nude film and the inspection of Δ database | |
| CN101344728B (en) | On-line measurement apparatus and method for wave aberration of photo-etching machine projection objective | |
| CN106289086B (en) | A kind of double camera measurement method for apart from Accurate Calibration between optical indicia point | |
| CN102620668B (en) | Method and device for measuring pixel pitch of image sensor based on point-target image splicing technology | |
| CN104198164A (en) | Focus detection method based on Hartmann wavefront detection principle | |
| CN106154761A (en) | A kind of veiling glare measurement apparatus and measuring method | |
| CN103472676B (en) | A kind of wave aberration measurement markers and wave aberration measuring method | |
| US11067510B2 (en) | System and method for estimating and compensating for sample drift during data acquisition in fluorescence microscopy | |
| CN109990985A (en) | A kind of Chinese character pin-shaped alignment infrared detector modulation transfer function test method | |
| CN102607442B (en) | Method and device for measuring space of pixels of image sensor by using constant-speed movable point target | |
| CN102607443B (en) | Point target image mosaic-based image sensor pixel pitch measurement method | |
| CN100480866C (en) | Testing tag and method for testing imaging quality of photoetching machine using the same | |
| WO2016201788A1 (en) | In-situ multichannel imaging quality detection device and method for mask aligner | |
| CN104678720A (en) | Method for rotatably detecting datum plate of work-piece stage by using mask aligning system | |
| JP2009250909A (en) | Measuring device | |
| CN101556431B (en) | Translational symmetric mark and photoetching machine projection objective wave aberration in-situ detection method | |
| CN102607444A (en) | Method and device for measuring space of pixels of image sensor by using linear light source | |
| CN102117026B (en) | Method for detecting and correcting period of alignment signal of lithography tool |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 201203 Shanghai Zhangjiang High Tech Park of Pudong New Area Zhang Road No. 1525 Patentee after: Shanghai microelectronics equipment (Group) Limited by Share Ltd Address before: 201203 Shanghai Zhangjiang High Tech Park of Pudong New Area Zhang Road No. 1525 Patentee before: Shanghai Micro Electronics Equipment Co., Ltd. |