CN103081133A - A light emitting apparatus - Google Patents

A light emitting apparatus Download PDF

Info

Publication number
CN103081133A
CN103081133A CN2011800424018A CN201180042401A CN103081133A CN 103081133 A CN103081133 A CN 103081133A CN 2011800424018 A CN2011800424018 A CN 2011800424018A CN 201180042401 A CN201180042401 A CN 201180042401A CN 103081133 A CN103081133 A CN 103081133A
Authority
CN
China
Prior art keywords
diode
composition
diodes
solvent
equipment according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011800424018A
Other languages
Chinese (zh)
Inventor
W·J·雷
M·D·洛温索尔
N·O·肖顿
R·A·布兰查德
M·A·莱万多夫斯基
B·奥罗
M·J·斯坦哈特
C·M·比肖夫
E·M·塞维奇
K·S·麦克圭尔
E·J·哈泽内尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Procter and Gamble Ltd
Procter and Gamble Co
Original Assignee
Procter and Gamble Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Procter and Gamble Ltd filed Critical Procter and Gamble Ltd
Publication of CN103081133A publication Critical patent/CN103081133A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
    • F21K9/232—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21W—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO USES OR APPLICATIONS OF LIGHTING DEVICES OR SYSTEMS
    • F21W2121/00—Use or application of lighting devices or systems for decorative purposes, not provided for in codes F21W2102/00 – F21W2107/00
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/95053—Bonding environment
    • H01L2224/95085—Bonding environment being a liquid, e.g. for fluidic self-assembly
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/13033—TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/13034—Silicon Controlled Rectifier [SCR]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13062—Junction field-effect transistor [JFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Circuit Arrangement For Electric Light Sources In General (AREA)
  • Paints Or Removers (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Led Device Packages (AREA)

Abstract

A lighting apparatus comprising a plurality of diodes and an electrical interface configured to receive an electrical signal and transmit the electrical signal to the plurality of diodes is provided.

Description

Luminaire
Technical field
The present invention relates to luminous and photovoltaic technology in general, and relates to specifically the luminaire with luminous or photovoltaic diode and the method for preparing them.
Background technology
Lighting device with light-emitting diode (" a plurality of LED ") need to use the integrated circuit method step to prepare LED at semiconductor wafer usually.Gained LED be basically the plane and larger, about 200 or more microns spans.Each this type of LED is two end equipments, and the identical faces at LED has two metal end usually, thereby the ohmic contact of LED p-type and n-type part is provided.Then the LED wafer is divided into single ledly, this is undertaken by mechanical means such as sawing usually.Then with the single led reflection housing that places, and with each of single two metal end that are connected to LED of closing line.This method is consuming time, labor-intensive and expensive, causes LED-based lighting device generally too expensive for multiple consumption is used.
Similarly, energy generation device such as photovoltaic panel also need to prepare photovoltaic diode at the semiconductor wafer or other substrates that use the integrated circuit method step usually.Then packing or assembling gained wafer or other substrates are with the preparation photovoltaic panel.This method also is consuming time, labor-intensive and expensive, causes photovoltaic devices also too expensive for carry out extensive use in the subsidy of no third side or the situation without other governments' excitations.
Utilized multiple technologies trial preparation Novel diode or other semiconductor devices to be used for luminous or production capacity purpose.For example, proposed to print or end-blocking functionalized with organic molecule to be miscible in quantum dot in organic resin and the solvent to form pattern, then luminous when driving described pattern with the second illumination.Also used semiconductor nanoparticle to carry out multiple device formation method, as at about 1.0nm to 1/10th microns of about 100nm() particle in the scope.Another kind method has been utilized the extensive silica flour that is dispersed in solvent-adhesive carrier, and the colloidal suspension liquid of gained silica flour is used for forming active layer at printed transistor.Another kind of diverse ways has used the very smooth AlInGaP LED structure that is formed on the GaAs wafer, each LED has the separation photoresist anchoring agent of on wafer two each in the LED, and selects subsequently and place each LED to form the gained device.
These methods are not yet utilized printing ink or the suspension that comprises semiconductor device, and they are complete and can work, and can use Method of printing forming device or system in the atmospheric environment of non-inertia.
These are still too complicated and expensive for LED-based device and photovoltaic devices for the exploitation based on the technology of diode recently, are difficult to reach the coml feasibility.Therefore, still need luminous and/or photovoltaic apparatus, from the assembly that adds be easy to manufacture view and they be designed to more cheap.Also need to use more cheap and more durable mode to make this type of method luminous or photovoltaic devices, thereby produce LED-based lighting device and photovoltaic panel, they can be widely used and be adopted by consumer and enterprise.Therefore there are multiple needs in the suspension of complete function diode, described diode can print to prepare LED-based device and photovoltaic devices, and need the printing process of this type of LED-based device of preparation and photovoltaic devices, and the LED-based device and the photovoltaic devices that need the gained printing.
Summary of the invention
Described exemplary embodiment provides a kind of " diode printing ink ", that is, the suspension of diode, it can print, for example by silk screen printing or flexographic printing.Such as hereinafter more detailed description, this was the semiconductor device that is completed into before entering the diode ink composite for described diode, and it can be exercised lighting function (when being presented as LED) or energy (when being presented as photovoltaic diode) is provided when being exposed to light source when energization.A kind of exemplary method also comprises the method for making diode printing ink, such as hereinafter more detailed description, the method is suspended in a plurality of diodes in solvent and thickness resin or the polymeric blends, and they can be printed to make LED-based device and photovoltaic devices.The example devices and the system that form by this type of diode printing ink of printing are also disclosed.Although in the explanation book fair on diode, the semiconductor device that person of skill in the art will appreciate that other types can be equal to and replace to form more so-called " semiconductor device printing ink ", and think all these type of modification be equal to and in the scope of the present disclosure.
Exemplary embodiment is a kind of composition, comprises: a plurality of diodes; The first solvent; And viscosity modifier.In one exemplary embodiment, described the first solvent can comprise and is selected from following at least a solvent: water; Alcohol is such as methyl alcohol, ethanol, normal propyl alcohol (comprising 1-propyl alcohol, 2-propyl alcohol (IPA)), butanols (comprising n-butyl alcohol, 2-butanols (isobutanol)), amylalcohol (comprising 1-amylalcohol, 2-amylalcohol, 3-amylalcohol), octanol, tetrahydrofurfuryl alcohol (THFA), cyclohexanol, terpineol; Ether such as ethyl methyl ether, ether, ethylene-propylene ether and polyethers; Ester such as ethyl acetate; Glycol such as ethylene glycol, diethylene glycol (DEG), polyethylene glycol, propylene glycol, glycol ether, glycol ether acetate; Carbonate such as propylene carbonate; Glycerine, acetonitrile, oxolane (THF), dimethyl formamide (DMF), N-METHYLFORMAMIDE (NMF), dimethyl sulfoxide (DMSO) (DMSO); And their mixture.
In one exemplary embodiment, described the first solvent comprises normal propyl alcohol.Described the first solvent content by weight can be about percent 5 to percent 50.In one exemplary embodiment, described viscosity modifier comprises methoxyl group celluosic resin or hydroxypropyl cellulose resin.Described viscosity modifier content by weight can be about 0.75% to 5%.
In one exemplary embodiment, described viscosity modifier comprises and is selected from following at least a viscosity modifier: clay such as HECTABRITE DP, POLARGEL NF, organo-clay; Carbohydrate and polysaccharide such as guar gum, xanthans; Cellulose and modified cellulose such as CMC, methylcellulose, methoxyl group cellulose, carboxymethyl cellulose, hydroxyethylcellulose and hydroxypropyl cellulose, cellulose ether, cellulosic ether, chitosan; Polymer such as acrylate and (methyl) acrylate polymer and copolymer, diethylene glycol (DEG), propylene glycol, pyrogenic silica, SiO 2 powder; Modified urea; And their mixture.
In one exemplary embodiment, described composition also comprises the second solvent that is different from described the first solvent.Described the second solvent can be and is selected from following at least a solvent: water; Alcohol is such as methyl alcohol, ethanol, normal propyl alcohol (comprising 1-propyl alcohol, 2-propyl alcohol (isopropyl alcohol)), isobutanol, butanols (comprising n-butyl alcohol, 2-butanols), amylalcohol (comprising 1-amylalcohol, 2-amylalcohol, 3-amylalcohol), octanol, tetrahydrofurfuryl alcohol, cyclohexanol; Ether such as ethyl methyl ether, ether, ethylene-propylene ether and polyethers; Ester such as ethyl acetate, dimethyl adipate ester, propylene glycol methyl ether acetate, dimethyl glutarate, dimethyl succinate ester; Glycol such as ethylene glycol, diethylene glycol (DEG), polyethylene glycol, propylene glycol, glycol ether, glycol ether acetate; Carbonate such as propylene carbonate; Glycerine, acetonitrile, oxolane (THF), dimethyl formamide (DMF), N-METHYLFORMAMIDE (NMF), dimethyl sulfoxide (DMSO) (DMSO); And their mixture.
Described the second solvent can be at least a dibasic ester.Described the second solvent can comprise resolvating agent or wetting solvent.In one exemplary embodiment, described the second solvent comprises: dimethyl glutarate and dimethyl succinate ester; Wherein said dimethyl glutarate is two-to-one approximately (2:1) to the ratio of dimethyl succinate ester.In another exemplary embodiment, described the second solvent content by weight can be about 0.1% to 10%.In another exemplary embodiment, described the second solvent content by weight can be about 0.5% to 6%.
In one exemplary embodiment, described the first solvent comprises normal propyl alcohol, terpineol or diethylene glycol (DEG), ethanol, tetrahydrofurfuryl alcohol, cyclohexanol or their mixture, and content by weight is about 5% to 50%; Described viscosity modifier comprises methoxyl group cellulose or hydroxypropyl cellulose resin, and content by weight is about 0.75% to 5.0%; Described the second solvent comprises the non-polar resin solvent, and its content by weight is about 0.5% to 10%; And the surplus of wherein said composition also comprises water.
Also disclose the method for preparing described composition, and illustrative methods embodiment comprises: mix described a plurality of diode and normal propyl alcohol; The mixture of described normal propyl alcohol and a plurality of diodes is joined in the described methylcellulose resin; Add described dimethyl glutarate and dimethyl succinate ester; And in air atmosphere, mixed described a plurality of diodes, normal propyl alcohol, methylcellulose resin, dimethyl glutarate and dimethyl succinate ester about 25 to 30 minutes.
Described illustrative methods also can comprise the described a plurality of diodes of release from wafer.In one exemplary embodiment, the step of the described a plurality of diodes of release also can comprise the dorsal surface of polishing and polishing described wafer from wafer.In another exemplary embodiment, the step of the described a plurality of diodes of release also can comprise the dorsal surface laser lift-off from described wafer from wafer.
In another exemplary embodiment, described the first solvent comprises by weight about normal propyl alcohol of 15% to 40%, terpineol or diethylene glycol (DEG), ethanol, tetrahydrofurfuryl alcohol or cyclohexanol; Described viscosity modifier comprises by weight about 1.25% to 2.5% methoxyl group cellulose or hydroxypropyl cellulose resin; Described the second solvent comprises by weight about 0.5% to 10% non-polar resin solvent; And the surplus of described composition also comprises water.
In another exemplary embodiment, described the first solvent comprises by weight about normal propyl alcohol of 17.5% to 22.5%, terpineol or diethylene glycol (DEG), ethanol, tetrahydrofurfuryl alcohol or cyclohexanol; Described viscosity modifier comprises by weight about 1.5% to 2.25% methoxyl group cellulose or hydroxypropyl cellulose resin; Described the second solvent comprises by weight about 0.01% to 6.0% at least a dibasic ester; The surplus of described composition also comprises water; And the viscosity of described composition 25 ℃ basically between about 5,000cps is to about 20, between the 000cps.
In another exemplary embodiment, described the first solvent comprises by weight about normal propyl alcohol of 20% to 40%, terpineol or diethylene glycol (DEG), ethanol, tetrahydrofurfuryl alcohol and/or cyclohexanol; Described viscosity modifier comprises by weight about 1.25% to 1.75% methoxyl group cellulose or hydroxypropyl cellulose resin; Described the second solvent comprises by weight about 0.01% to 6.0% at least a dibasic ester; The surplus of described composition also comprises water; And the viscosity of wherein said composition 25 ℃ basically between about 1,000cps is to about 5, between the 000cps.
In a plurality of exemplary embodiments, described composition can have basically between about 1 at about 25 ℃, 000cps and about 20, the viscosity between the 000cps, perhaps can have at about 25 ℃ about 10, the viscosity of 000cps.
In one exemplary embodiment, each diode in described a plurality of diode comprises GaN and silicon substrate.In another exemplary embodiment, each diode in described a plurality of diodes comprises GaN heterostructure and GaN substrate.In a plurality of exemplary embodiments, the GaN of each diode in described a plurality of diodes partly is basically foliated, star or annular.
In a plurality of exemplary embodiments, each diode in described a plurality of diodes have on the first side of described diode the first metal end and in the second metal end of the second dorsal surface of described diode.In other exemplary embodiments, each diode in described a plurality of diodes only has a metal end or electrode.
In another exemplary embodiment, each diode in described a plurality of diode has at least one metal pathway structure, and this structure is extended between the second dorsal surface of described diode between at least one p+ on the first side of described diode or n+GaN layer.In a plurality of exemplary embodiments, described metal pathway structure comprises central corridor, periphery path or peripheral path.
In a plurality of exemplary embodiments, any size of each diode in described a plurality of diodes is all less than about 450 microns.In another exemplary embodiment, any size of each diode in described a plurality of diodes is all less than about 200 microns.In another exemplary embodiment, any size of each diode in described a plurality of diodes is all less than about 100 microns.In another exemplary embodiment, any size of each diode in described a plurality of diodes is all less than about 50 microns.
In one exemplary embodiment, each diode in described a plurality of diodes can be basically hexagonal, and diameter is about 20 to 30 microns, and highly is about 10 to 15 microns.
In one exemplary embodiment, described a plurality of diode comprises and is selected from least one following inorganic semiconductor: silicon, GaAs (GaAs), gallium nitride (GaN), GaP, InAlGaP, InAlGaP, AlInGaAs, InGaNAs and AlInGASb.In another exemplary embodiment, a plurality of diodes comprise and are selected from least one following organic semiconductor: pi-conjugated polymer, poly-(acetylene), poly-(pyrroles), poly-(thiophene), polyaniline, polythiophene, poly-(to phenylene sulfoether), poly-(to the styrene support) (PPV) and the PPV derivative, poly-(3-alkylthrophene), poly-indoles, poly-pyrene, polycarbazole, poly-Azulene, poly-azepine, poly-(fluorenes), poly-naphthalene, polyaniline, polyaniline derivative, polythiophene, polythiofuran derivative, poly-giving a tongue-lashing coughed up, poly-giving a tongue-lashing coughed up derivative, the polyphenyl bithiophene, the polyphenyl thiophthene derivative, polyparaphenylene, the poly radical derivative, polyacetylene, Polyacetylene Derivatives, polydiacetylene, the polydiacetylene derivative, poly-to the benzene ethylene, poly-to benzene ethylene derivative, poly-naphthalene, poly-naphthalene derivatives, polyisothianaphthene (PITN), poly-heteroaryl ethylene support (ParV), wherein heteroaryl is thiophene, furans or pyrroles, polyphenylene-sulfide (PPS), poly-all positions naphthalene (PPN), poly-phthalocyanine (PPhc), with their derivative, their copolymer, and their mixture.
In a plurality of exemplary embodiments, described viscosity modifier also comprises the adhesive viscosities conditioning agent.When being dried in one exemplary embodiment or solidifying, the periphery that described viscosity modifier can center on each diode in described a plurality of diodes basically forms polymer or resin lattice or structure.
In one exemplary embodiment, when wetting, described composition is visually opaque, and when being dried or solidify, described composition is basically visually transparent.
In one exemplary embodiment, described the first solvent is non-electric insulation basically.
In another exemplary embodiment, described composition has greater than about 25 degree or greater than about 40 contact angles of spending.
In another exemplary embodiment, described composition has the relative evaporation speed less than 1, and wherein said evaporation rate has 1 speed with respect to butyl acetate.
Also disclose a kind of illustrative methods of using described composition, be included in the described composition of printing on the first conductor that is coupled to pedestal.
Disclose another exemplary embodiment, wherein said composition comprises: a plurality of diodes; And viscosity modifier, for example methoxyl group celluosic resin or hydroxypropyl cellulose resin.Described viscosity modifier content by weight can be about 0.75% to 5%.Described exemplary embodiment also can comprise the first solvent, and also can further comprise the second solvent that is different from described the first solvent.
In another exemplary embodiment, a kind of composition comprises: a plurality of diodes; The first solvent; The second solvent; Be used for to described composition be provided at about 25 ℃ basically between about 5,000cps and about 15, the viscosity modifier of the viscosity between the 000cps.
In another exemplary embodiment, a kind of composition comprises: a plurality of diodes; With the first wetting solvent.In another exemplary embodiment, a kind of composition comprises: a plurality of diodes; With a kind of adhesive viscosities conditioning agent.
Another exemplary composition comprises: a plurality of diodes; Be used for to described composition be provided at about 25 ℃ basically between about 1,000cps and about 20, the viscosity modifier of the viscosity between the 000cps.
In another exemplary embodiment, a kind of composition comprises: a plurality of diodes; The first solvent, it comprises normal propyl alcohol, terpineol or diethylene glycol (DEG), ethanol, tetrahydrofurfuryl alcohol or cyclohexanol; Viscosity modifier, it comprises methoxyl group cellulose or hydroxypropyl cellulose resin; With the second non-polar resin solvent.
In another exemplary embodiment, a kind of composition comprises: a plurality of diodes; The first solvent, it comprises by weight about normal propyl alcohol of 15% to 40%, terpineol or diethylene glycol (DEG), ethanol, tetrahydrofurfuryl alcohol or cyclohexanol or their mixture; Viscosity modifier, it comprises by weight about 1.25% to 2.5% methoxyl group cellulose or hydroxypropyl cellulose resin or their mixture; About dibasic ester of 0.5% to 10% by weight.
In another exemplary embodiment, a kind of composition comprises: a plurality of diodes; The first solvent, it comprises by weight about normal propyl alcohol of 17.5% to 22.5%, terpineol or diethylene glycol (DEG), ethanol, tetrahydrofurfuryl alcohol or cyclohexanol or their mixture; Viscosity modifier, it comprises by weight about 1.5% to 2.25% methoxyl group cellulose or hydroxypropyl cellulose resin or their mixture; About 0.01% to 6.0% at least a dibasic ester by weight; The viscosity of wherein said composition 25 ℃ basically between about 5,000cps is to about 20, between the 000cps.
Another exemplary composition comprises: a plurality of diodes; The first solvent, it comprises by weight about normal propyl alcohol of 20% to 40%, terpineol or diethylene glycol (DEG), ethanol, tetrahydrofurfuryl alcohol or cyclohexanol or their mixture; Viscosity modifier, it comprises by weight about 1.25% to 1.75% methoxyl group cellulose or hydroxypropyl cellulose resin or their mixture; About 0.01% to 6.0% at least a dibasic ester by weight; The viscosity of wherein said composition 25 ℃ basically between about 1,000cps is to about 5, between the 000cps.
In another exemplary embodiment, a kind of composition comprises: a plurality of diodes; Normal propyl alcohol; The methoxyl group celluosic resin; And dimethyl glutarate.In another exemplary embodiment, a kind of composition comprises: a plurality of diodes; Normal propyl alcohol; The hydroxypropyl cellulose resin; And dimethyl glutarate.And in another exemplary embodiment, a kind of composition comprises: a plurality of diodes; Normal propyl alcohol; Methoxyl group celluosic resin or hydroxypropyl cellulose resin or their mixture; Dimethyl glutarate; With the dimethyl succinate ester.
Also disclose a kind of exemplary lighting apparatus, described exemplary lighting apparatus comprises: the flexible base that has adhesive in the first side; Be coupled to a plurality of first conductors of described pedestal; Basically in parallel a plurality of light-emitting diodes on random distribution and first conductor in described a plurality of the first conductors, in described a plurality of light-emitting diode at least some have the first forward deflection orientation, and in described a plurality of light-emitting diode at least one has the second skew deviation orientation; Be coupled to described a plurality of diode and be coupled at least one second conductor of the second conductor of described a plurality of the first conductors; Be coupled to described at least one second conductor or one luminescent layer of stabilized zone between two parties; Be coupled to the protective coating of described luminescent layer; With the electrical interface that is coupled to described a plurality of the first conductors.
Example devices also can comprise polymer or the resin lattice that is coupled to described a plurality of light-emitting diodes.Example devices can be luminous, and luminous quantity is at least about 10lm/W.Described a plurality of light-emitting diode can comprise diameter be about 20 microns to about 30 microns particle mean size.Exemplary base can be selected from: flexible material, porous material, permeable material, transparent material, trnaslucent materials, opaque material and their mixture.Exemplary base can be selected from: plastics, polymeric material, natural rubber, synthetic rubber, natural fabric, synthetic textiles, glass, pottery, silicon derived material, silicon dioxide derived material, concrete, stone material, extrude polyenoid and belong to film, polymerization supatex fabric, cellulose paper wood and their mixture.Exemplary base can be enough to provide electric insulation and wherein said protective coating to form weather-proof sealing.
In another exemplary embodiment, described equipment has the average surface volume concentrations of described a plurality of light-emitting diodes of every square centimeter of about 5 to 10,000 diode.
In another exemplary embodiment, described electrical interface comprises and is selected from least one following interface: ES, E27, SES, E14, L1, PL-2 pin, PL – 4 pins, G9 halogen capsule, G4 halogen capsule, GU10, GU5.3, bayonet socket and little bayonet socket.
In another exemplary embodiment, lighting apparatus comprises: translucent or transparent shell; Be coupled to the electrical interface that described shell also can be coupled to power supply; Pedestal; Be coupled to described pedestal and be coupled to a plurality of first conductors of described electrical interface; Basically in parallel a plurality of light-emitting diodes on random distribution and first conductor in described a plurality of the first conductors, in described a plurality of light-emitting diode at least some have the first forward deflection orientation, and in described a plurality of light-emitting diode at least one has the second skew deviation orientation; Be coupled to described a plurality of diode and be coupled at least one second conductor of the second conductor of described a plurality of the first conductors; Be coupled to described at least one second conductor or one luminescent layer of stabilized zone between two parties; With the protective coating that is coupled to described luminescent layer.In one exemplary embodiment, described shell has the size that is suitable for putting into user's hand.
A plurality of other advantages of the present invention and characteristic root descend detailed Description Of The Invention and embodiment, claim and accompanying drawing to become apparent according to this.
Description of drawings
When the reference following discloses are also considered by reference to the accompanying drawings, purpose of the present invention, feature and advantage will be apparent, wherein in different views, use as reference number and identify same components, and wherein utilize reference number and alphabet letters to identify addition type, example or the modification of the selection assembly embodiment in different views, wherein:
Scheme (or " figure ") the 1st, the perspective view of exemplary first diode embodiment is shown.
Scheme (or " figure ") the 2nd, the top view of exemplary first diode embodiment is shown.
Scheme (or " figure ") the 3rd, the profile of exemplary first diode embodiment is shown.
Scheme (or " figure ") the 4th, the perspective view of exemplary second diode embodiment is shown.
Scheme (or " figure ") the 5th, the top view of exemplary second diode embodiment is shown.
Scheme (or " figure ") the 6th, the perspective view of exemplary the 3rd diode embodiment is shown.
Scheme (or " figure ") the 7th, the top view of exemplary the 3rd diode embodiment is shown.
Scheme (or " figure ") the 8th, the perspective view of exemplary the 4th diode embodiment is shown.
Scheme (or " figure ") the 9th, the top view of exemplary the 4th diode embodiment is shown.
Scheme (or " figure ") the 10th, the profile of exemplary second diode embodiment, the 3rd diode embodiment and/or the 4th diode embodiment is shown.
Scheme (or " figure ") the 11st, the perspective view of exemplary the 5th diode embodiment and the 6th diode embodiment is shown.
Scheme (or " figure ") the 12nd, the top view of exemplary the 5th diode embodiment and the 6th diode embodiment is shown.
Scheme (or " figure ") the 13rd, the profile of exemplary the 5th diode embodiment is shown.
Scheme (or " figure ") the 14th, the profile of exemplary the 6th diode embodiment is shown.
Scheme (or " figure ") the 15th, the perspective view of exemplary the 7th diode embodiment is shown.
Scheme (or " figure ") the 16th, the top view of exemplary the 7th diode embodiment is shown.
Scheme (or " figure ") the 17th, the profile of exemplary the 7th diode embodiment is shown.
Scheme (or " figure ") the 18th, the perspective view of exemplary the 8th diode embodiment is shown.
Scheme (or " figure ") the 19th, the top view of exemplary the 8th diode embodiment is shown.
Scheme (or " figure ") the 20th, the profile of exemplary the 8th diode embodiment is shown.
Scheme (or " figure ") the 21st, have the profile of the wafer of oxide skin(coating) such as silicon dioxide.
Figure (or " figure ") the 22nd has the profile with the wafer of the etched oxide skin(coating) of lattice.
Figure (or " figure ") the 23rd has the top view with the wafer of the etched oxide skin(coating) of lattice.
Figure (or " figure ") the 24th, the profile of the wafer of the silicon dioxide layer that have resilient coating (for example aluminium nitride or silicon nitride), has with lattice and gallium nitride (GaN) layer.
Scheme (or " figure ") the 25th, have the profile of the substrate of resilient coating and compound GaN heterostructure (n+GaN layer, quantum well zone, and p+GaN layer).
Scheme (or " figure ") the 26th, have the profile of the substrate of resilient coating and the compound GaN heterostructure of First facet etch.
Scheme (or " figure ") the 27th, have the profile of the substrate of resilient coating and the compound GaN heterostructure of the second mesa etch.
Figure (or " figure ") the 28th has resilient coating, the compound GaN heterostructure of mesa etch and is connected the profile of substrate of the etching substrates of path connection.
Figure (or " figure ") the 29th has resilient coating, the compound GaN heterostructure of mesa etch, forms the profile of the substrate of the metal layer of ohmic contact and the shaping path that metallizes with the p+GaN layer.
Scheme (or " figure ") the 30th, have the profile of the substrate of resilient coating, the compound GaN heterostructure of mesa etch, the metal layer with p+GaN layer formation ohmic contact, metallization shaping path and lateral etch groove.
Scheme (or " figure ") the 31st, have the profile of the substrate of resilient coating, the compound GaN heterostructure of mesa etch, the metal layer with p+GaN layer formation ohmic contact, metallization shaping path, lateral etch groove and passivation layer (such as silicon nitride).
Figure (or " figure ") the 32nd has resilient coating, the compound GaN heterostructure of mesa etch, forms the profile of substrate of metal layer of metal layer, metallization shaping path, lateral etch groove, passivation layer and formation projection or the bulge-structure of ohmic contact with the p+GaN layer.
Scheme (or " figure ") the 33rd, have the profile of the substrate of compound GaN heterostructure (n+GaN layer, quantum well zone, and p+GaN layer).
Scheme (or " figure ") the 34th, have the profile of the substrate of the compound GaN heterostructure of the 3rd mesa etch.
Figure (or " figure ") the 35th has the compound GaN heterostructure of mesa etch, is used for the profile of the substrate of the etching substrates of path connection and lateral etch groove.
Figure (or " figure ") the 36th has the compound GaN heterostructure of mesa etch, with n+GaN layer formation ohmic contact and form the metal layer of path and the profile of the substrate of lateral etch groove.
Figure (or " figure ") the 37th, have the compound GaN heterostructure of mesa etch, form ohmic contact with the n+GaN layer and form path metal layer, with the profile of the substrate of the metal layer of p+GaN layer formation ohmic contact and lateral etch groove.
Figure (or " figure ") the 38th, have the compound GaN heterostructure of mesa etch, form ohmic contact with the n+GaN layer and form path metal layer, with the profile of the substrate of metal layer, lateral etch groove and the passivation layer (such as silicon nitride) of p+GaN layer formation ohmic contact.
Figure (or " figure ") the 39th, have the compound GaN heterostructure of mesa etch, form ohmic contact with the n+GaN layer and form path metal layer, form the profile of substrate of metal layer of metal layer, lateral etch groove, passivation layer (such as silicon nitride) and formation projection or the bulge-structure of ohmic contact with the p+GaN layer.
Figure (or " figure ") the 40th, have resilient coating, compound GaN heterostructure (n+GaN layer, quantum well zone and p+GaN layer) and with the profile of the substrate of the metal layer of p+GaN layer formation ohmic contact.
Figure (or " figure ") the 41st, have resilient coating, the compound GaN heterostructure of the 4th mesa etch and with the profile of the substrate of the metal layer of p+GaN layer formation ohmic contact.
Figure (or " figure ") the 42nd, have resilient coating, the compound GaN heterostructure of mesa etch, with the p+GaN layer form ohmic contact metal layer and with the profile of the substrate of the metal layer of n+GaN layer formation ohmic contact.
Figure (or " figure ") the 43rd, have resilient coating, the compound GaN heterostructure of mesa etch, with the profile of the substrate of the metal layer of n+GaN layer formation ohmic contact and lateral etch groove.
Figure (or " figure ") the 44th has resilient coating, the compound GaN heterostructure of mesa etch, forms the metal layer of ohmic contact with the n+GaN layer, forms the metal layer of ohmic contact with the p+GaN layer and has the profile of substrate of the lateral etch groove of the peripheral path of metallization shaping.
Figure (or " figure ") the 45th, have resilient coating, the compound GaN heterostructure of mesa etch, with the n+GaN layer form ohmic contact metal layer, with the p+GaN layer form ohmic contact metal layer, have the be shaped profile of substrate of metal layer of lateral etch groove, passivation layer (such as silicon nitride) and formation projection or bulge-structure of peripheral path of metallization.
Scheme (or " figure ") the 46th, the profile of the exemplary diode wafer embodiment that adheres to chucking device is shown.
Scheme (or " figure ") the 47th, the profile of the exemplary diode wafer embodiment that adheres to chucking device is shown.
Scheme (or " figure ") the 48th, the profile of the exemplary diode embodiment that adheres to chucking device is shown.
Scheme (or " figure ") the 49th, the flow chart of exemplary first embodiment of the method for diode manufacturing is shown.
Figure (or " figure ") 50A is the flow chart that exemplary second embodiment of the method for diode manufacturing is shown.
Figure (or " figure ") 50B is the flow chart that exemplary second embodiment of the method for diode manufacturing is shown.
Figure (or " figure ") 51A is the flow chart that the exemplary third method embodiment of diode manufacturing is shown.
Figure (or " figure ") 51B is the flow chart that the exemplary third method embodiment of diode manufacturing is shown.
Figure (or " figure ") the 52nd illustrates exemplary polishing and the profile of the diode wafer embodiment that polished, and described wafer adheres to chucking device and is suspended in the dish with adhesive solvent.
Figure (or " figure ") the 53rd illustrates the flow chart for the illustrative methods embodiment of diode suspension manufacturing.
Figure (or " figure ") the 54th, the perspective view of example devices embodiment.
Figure (or " figure ") the 55th illustrates the top view of exemplary electrical electrode structure of the first conductive layer of example devices embodiment.
Figure (or " figure ") the 56th, the first profile of example devices embodiment.
Figure (or " figure ") the 57th, the second profile of example devices embodiment.
Scheme (or " figure ") the 58th, be coupled to the second profile of the exemplary diode of the first conductor.
Figure (or " figure ") 59 is block diagrams of the first example system embodiment.
Figure (or " figure ") 60 is block diagrams of the second example system embodiment.
Figure (or " figure ") the 61st illustrates the flow chart for the illustrative methods embodiment of device fabrication.
Figure (or " figure ") the 62nd, the photo that energization example devices embodiment is luminous.
Figure (or " figure ") the 63rd, the scanning electron micrograph of exemplary second diode embodiment.
Figure (or " figure ") the 64th, the scanning electron micrograph of a plurality of exemplary second diode embodiment.
Figure (or " figure ") the 65th, the perspective view of the exemplary embodiment of light fixture.
Figure (or " figure ") the 66th, the perspective view of the exemplary embodiment of light fixture.
Figure (or " figure ") the 67th, the perspective view of the exemplary embodiment of light fixture.
Figure (or " figure ") the 68th, the perspective view of the exemplary embodiment of light fixture.
Figure (or " figure ") the 69th, the perspective view of the exemplary embodiment of light fixture.
Figure (or " figure ") the 70th, the perspective view of the exemplary embodiment of light fixture.
Figure (or " figure ") the 71st, the sectional view of the exemplary embodiment of light fixture.
Figure (or " figure ") the 72nd, the sectional view of the exemplary embodiment of light fixture.
Figure (or " figure ") the 73rd, the perspective view of the exemplary embodiment of light fixture.
Figure (or " figure ") the 74th, the sectional view of the exemplary embodiment of light fixture.
Figure (or " figure ") the 75th, the end view of the exemplary embodiment of light fixture.
Figure (or " figure ") the 76th, the end view of the exemplary embodiment of light fixture.
Figure (or " figure ") the 77th, the end view of the exemplary embodiment of light fixture.
Figure (or " figure ") 78A is the end view of the exemplary embodiment of light fixture.
Figure (or " figure ") 78B is the perspective view of the embodiment of Figure 78 A.
Figure (or " figure ") the 79th, the perspective view of the exemplary embodiment of light fixture.
Figure (or " figure ") the 80th, the perspective view of the exemplary embodiment of light fixture.
Figure (or " figure ") the 81st, the perspective view of the exemplary embodiment of light fixture.
Figure (or " figure ") the 82nd, the perspective view of the exemplary embodiment of light fixture.
Figure (or " figure ") the 83rd, the perspective view of the exemplary embodiment of light fixture.
Figure (or " figure ") the 84th, the sectional view of the exemplary embodiment of light fixture.
Figure (or " figure ") the 85th, the perspective view of the exemplary embodiment of light fixture.
Figure (or " figure ") the 86th, the perspective view of the exemplary embodiment of light fixture.
Figure (or " figure ") 87A is the end view of the exemplary embodiment of light fixture.
Figure (or " figure ") 87B is the end view of the embodiment of Figure 87 A.
Figure (or " figure ") the 88th, the perspective view of the exemplary embodiment of light fixture.
Figure (or " figure ") 89A is the end view of the exemplary embodiment of light fixture.
Figure (or " figure ") 89B is the end view of the embodiment of Figure 89 A.
Figure (or " figure ") 90A is the end view of the exemplary embodiment of light fixture.
Figure (or " figure ") 90B is the sectional view along the embodiment of Figure 90 A of hatching 90B-90B intercepting.
Figure (or " figure ") 90C is the perspective view of the exemplary embodiment of light fixture.
Figure (or " figure ") 91A is the top view of the exemplary embodiment of light fixture.
Figure (or " figure ") 91B is the perspective view of the exemplary embodiment of light fixture.
Figure (or " figure ") 91C is the perspective view of the exemplary embodiment of light fixture.
Figure (or " figure ") 91D is the perspective view of the exemplary embodiment of light fixture.
Figure (or " figure ") 92A is the perspective view of the exemplary embodiment of light fixture.
Figure (or " figure ") 92B is the fragmentary, perspective view of the exemplary embodiment of light fixture.
Figure (or " figure ") 92C is the fragmentary, perspective view of the exemplary embodiment of light fixture.
Figure (or " figure ") 92D is the fragmentary, perspective view of the exemplary embodiment of light fixture.
Figure (or " figure ") 92E is the perspective view of the exemplary embodiment of light fixture.
Figure (or " figure ") the 93rd, the perspective view of the exemplary embodiment of light fixture.
Figure (or " figure ") 94A is the perspective view of the exemplary embodiment of light fixture.
Figure (or " figure ") 94B is the perspective view of the exemplary embodiment of sheet material volume.
Figure (or " figure ") 94C is the perspective view of the exemplary embodiment of light fixture.
Figure (or " figure ") the 95th has the perspective view of the exemplary bulb sub-assembly of two light-emitting areas.
Figure (or " figure ") the 96th, the profile of the example devices of the bulb sub-assembly of formation Figure 95.
Figure (or " figure ") the 97th is according to the diagram of the example devices of embodiment of the present invention.
Figure (or " figure ") the 98th, the profile of the example devices of Figure 97 of A-A intercepting along the line.
Figure (or " figure ") the 99th is suitable for the perspective view of the equipment that uses with the exemplary coupling mechanism of another kind.
Scheme (or " figure ") the 100th, be connected to the end view of two equipment of power supply via the exemplary coupling mechanism of Figure 99.
Figure (or " figure ") 101A is the perspective view of the exemplary embodiment of light fixture.
Figure (or " figure ") 101B is the perspective view of the embodiment of Figure 101 A.
Figure (or " figure ") 102A is the perspective view of the exemplary embodiment of light fixture.
Figure (or " figure ") 102B is the perspective view of the embodiment of Figure 102 A.
Figure (or " figure ") 103A is the perspective view of the exemplary embodiment of light fixture.
Figure (or " figure ") 103B is the perspective view of the embodiment of Figure 103 A.
Figure (or " figure ") 104A is the perspective view of the exemplary embodiment of light fixture.
Figure (or " figure ") 104B is the perspective view of the embodiment of Figure 104 A.
Figure (or " figure ") 105A is the perspective view of the exemplary embodiment of light fixture.
Figure (or " figure ") 105B is the perspective view of the embodiment of Figure 105 A.
Figure (or " figure ") the 106th, the perspective view of the exemplary embodiment of light fixture.
Figure (or " figure ") the 107th, the perspective view of the exemplary embodiment of light belt sub-assembly.
Figure (or " figure ") the 108th, the end view of the light belt sub-assembly of Figure 107, this sub-assembly is arranged in the groove of base assembly embodiment.
Figure (or " figure ") the 109th, the perspective view of the exemplary embodiment of light fixture.
Figure (or " figure ") the 110th, the perspective view of the exemplary embodiment of light fixture.
Figure (or " figure ") 111A is the perspective view of the exemplary embodiment of light fixture.
Figure (or " figure ") 111B is the perspective view of the embodiment of Figure 111 A.
Figure (or " figure ") 112A is the perspective view of the exemplary embodiment of light fixture.
Figure (or " figure ") 112B is the perspective view of the embodiment of Figure 112 A.
Figure (or " figure ") 113A is the perspective view of the exemplary embodiment of light fixture.
Figure (or " figure ") 113B is the top view of the embodiment of Figure 113 A.
Figure (or " figure ") 114A is the perspective view of the exemplary embodiment of light fixture.
Figure (or " figure ") 114B is the top view of the embodiment of Figure 114 A.
Figure (or " figure ") 115A is the perspective view of the exemplary embodiment of light fixture.
Figure (or " figure ") 115B is the top view of the embodiment of Figure 115 A.
Figure (or " figure ") 116A is the perspective view of the exemplary embodiment of light fixture.
Figure (or " figure ") 116B is the top view of the embodiment of Figure 116 A.
Embodiment
Although the present invention is applicable to multiple multi-form embodiment, with shown in the drawings and this paper will describe in detail that their concrete exemplary embodiment is interpreted as that the disclosure will be considered to the illustration of the principle of the invention and be not intended to the specific embodiment that limit the invention to illustrate.Aspect this, before describing at least one embodiment consistent with the present invention in detail, should understand and the invention is not restricted to it for shown in the context, illustrated in the accompanying drawings or the structure details in example, described and the application of arrangement of components.The method and apparatus consistent with the present invention can be used in other embodiment and implements in many ways and carry out.The specification digest that also should understand phrase used herein and term and hereinafter comprise is used for describing purpose, and should not be considered to restrictive.
Exemplary embodiment of the present invention provides and is referred to as " diode 100-100J " among diode 100,100A, 100B, 100C, 100D, 100E, 100F, 100G, 100H, 100I, 100J(this paper and the Tu) liquid and/or gel suspension, it can be printed, and in other words this paper can be called " diode printing ink ", is understood to that " diode printing ink " means and be called liquid and/or the gel suspension of diode such as exemplary diode 100-100J.As hereinafter more describing in detail, this all forms semiconductor devices before diode 100-100J in being included in the diode ink composite, it can bring into play function, perhaps power supply when being exposed to light source (when as photovoltaic diode) when energization (when as LED) when luminous.Illustrative methods of the present invention also comprises the method for making diode printing ink, and it is suspended in a plurality of diode 100-100J in solvent and thickness resin or the polymeric blends as hereinafter more describing in detail, and it can be printed to make LED-based device and photovoltaic devices.Although described description concentrates on the diode 100 – 100J, the semiconductor device that person of skill in the art will appreciate that other types can be equal to replace to form and more broadly is called " semiconductor device printing ink ", unrestrictedly such as the transistor (field-effect transistor (FET), mos field effect transistor (MOSFET), crystal type field-effect transistor (JFET), bipolar junction transistor (BJT) etc.) of any type, bidirectional trigger diode (diac), triode ac switch (triac), thyristor etc.
The packing that diode printing ink (or semiconductor device printing ink) can be printed or be applied to any article of commerce or be associated with goods.As used herein, " article of commerce " refers to any product of any kind, and such as the consumer goods, individual product, commercial product, industrial products etc. is included in the point of sale sale for end user's product.For example, article of commerce can be industry or commercial product, its in the point of sale (for example retail trader or pass through the internet) sell commerce or industrial application for the end user.As used herein, " consumer's article of commerce " refers to any consumer goods, and it is sold in the point of sale for the end user individual and uses.For example, consumer's article of commerce can be the consumer goods, and it is sold (for example shop or pass through the internet) and uses for the end user individual in the point of sale.Diode printing ink (or semiconductor device printing ink) can be printed on goods or its packing, as the functional or ornamental assembly of goods, packing or said two devices.In one embodiment, with mark pattern printing diode printing ink.Described goods or package can be formed by the acceptable material of any consumer.
Fig. 1 is the perspective view that exemplary first diode 100 embodiment are shown.Fig. 2 is the top view that exemplary first diode 100 embodiment are shown.Fig. 3 is the profile (by the 10-10 ' plane of Fig. 2) that exemplary first diode 100 embodiment are shown.Fig. 4 is the perspective view that exemplary second diode 100A embodiment is shown.Fig. 5 is the top view that exemplary second diode 100A embodiment is shown.Fig. 6 is the perspective view that exemplary the 3rd diode 100B embodiment is shown.Fig. 7 is the top view that exemplary the 3rd diode 100B embodiment is shown.Fig. 8 is the perspective view that exemplary the 4th diode 100C embodiment is shown.Fig. 9 is the top view that exemplary the 4th diode 100C embodiment is shown.Figure 10 is profile that exemplary second diode 100A, the 3rd diode 100B and/or the 4th diode 100C embodiment are shown (by Fig. 5,7,9 20-20 ' plane).Figure 11 is the perspective view that exemplary the 5th diode 100D and the 6th diode 100E embodiment are shown.Figure 12 is the top view that exemplary the 5th diode 100D and the 6th diode 100E embodiment are shown.Figure 13 is the profile (by the 40-40 ' plane of Figure 12) that exemplary the 5th diode 100D embodiment is shown.Figure 14 is the profile (by the 40-40 ' plane of Figure 12) that exemplary the 6th diode 100E embodiment is shown.Figure 15 is the perspective view that exemplary the 7th diode 100F embodiment is shown.Figure 16 is the top view that exemplary the 7th diode 100F embodiment is shown.Figure 17 is the profile (by the 42-42 ' plane of Figure 16) that exemplary the 7th diode 100F embodiment is shown.Figure 18 is the perspective view that exemplary the 8th diode 100G embodiment is shown.Figure 19 is the top view that exemplary the 8th diode 100G embodiment is shown.Figure 20 is the profile (by the 43-43 ' plane of Figure 19) that exemplary the 8th diode 100G embodiment is shown.The profile of the 9th diode 100H, the tenth diode 100I and the 11 diode 100J embodiment respectively in Figure 39,45 and 48 diagram as example fabrication method partly illustrate.Figure 63 is the scanning electron micrograph of exemplary second diode 100A embodiment.Figure 64 is the scanning electron micrograph of a plurality of exemplary second diode 100A embodiment.
In perspective view and top view (Fig. 1,2,4 – 9,11,12,15,16,18 and 19), omitted the schematic diagram of passivation layer 135, this is for layer below other and the view of structure are provided, otherwise they will be covered (and so invisible) by this passivation layer 135.Passivation layer 135 is shown in the profile (Fig. 3,10,13,14,17,20,39,45 and 48), and the technical staff of electronic applications will recognize that the diode 100 – 100J of processing generally will comprise at least one this type of passivation layer 135.In addition, referring to Fig. 1-48,52 and 54 – 58, those skilled in the art will recognize that also many figure are used for the description and interpretation purpose, and not to scale (NTS) is drawn.
As hereinafter more describing in detail, 11 diode embodiment of first exemplary diode to the, 100 – 100J are mainly at available substrate 105 and wafer 150, the shape of 150A, material, mix and other compositions, led lighting region processing shape, path (130,131,132,133,134) depth and place (for example shallow or " blind ", dark or " penetrating ", central authorities, periphery, with periphery), dorsal surface (the second side) metal level (122) is used to form the purposes of the second end 127, the shape of other contacting metals, size is different with the aspect, position, and as hereinafter more detailed description also can be in difference aspect the shape of miscellaneous part or the position.Illustrative methods and method modification for the manufacture of exemplary diode 100-100J have hereinafter also been described.One or more exemplary diode 100-100J also available from and can pass through NthDegree Technologies Worldwide, Inc.(Tempe, Arizona, USA) obtain.
Referring to Figure 120, use substrate 105 to form exemplary diode 100,100A, 100B, 100C, for example heavily doped n+(n adds) or p+(p add) substrate 105, for example heavily doped n+ or p+ silicon substrate, for example and unrestrictedly it can be silicon chip or can be complicated substrate or wafer, as be included in silicon substrate (105) (" SOI ") on the insulator, or be included in gallium nitride (GaN) substrate 105(on sapphire (106) the wafer 150A shown in Fig. 11 – 20).Also can be equal to the substrate that the utilizes other types wafer of substrate (and/or form or have) 105, for example and unrestrictedly comprise Ga, GaAs, GaN, SiC, SiO 2, sapphire, organic semiconductor etc., as hereinafter more describing in detail.Therefore, it will broadly be interpreted as the substrate that also comprises any type when mentioning substrate 105, for example n+ or p+ silicon, n+ or p+GaN, for example use n+ that silicon chip 150 forms or p+ silicon substrate or the n+ that processes at sapphire wafer 105A or p+GaN(referring to following Fig. 11 – 20 and 33 – 45).When using silicon, substrate 105 has usually＜and 111〉or＜110〉crystal structure or direction, utilize other crystal structures but can be equal to.Optional resilient coating 145 is usually in silicon substrate 105 processing, for example aluminium nitride or silicon nitride, thus be conducive to have subsequently the manufacturing of the GaN layer of different lattice constants.The GaN layer is processed on resilient coating 145, for example processes by epitaxial growth, thereby forms compound GaN heterostructure, generally is illustrated as n+GaN layer 110, quantum well zone 185 and p+GaN layer 115.In other embodiments, do not utilize maybe and can not utilize resilient coating 145, for example work as compound GaN heterostructure (n+GaN layer 110, quantum well zone 185 and p+GaN layer 115) and add man-hour on GaN substrate 105, shown in Fig. 15 – 17, this is a kind of more concrete option.The technical staff of electronic applications will understand can exist a plurality of quantum well luminous to form (or light absorption) zone 140 in potential a plurality of p+ and n+GaN layer, and n+GaN layer 110, quantum well zone 185 and p+GaN layer 115 only are illustrative and general introduction and the summary of the compound GaN heterostructure that forms one or more luminous (or light absorption) zone 140 are provided.The position that the technical staff of electronic applications also will understand n+GaN layer 110 and p+GaN layer 115 can be identical or can be and oppositely is equal to, for example be used for p+ silicon substrate 105, and utilize other compositions and material to form their many hereinafter descriptions of one or more luminous (or light absorption) regional 140(), all these type of modification are in the scope of the present disclosure.
N+ or p+ substrate 105 conductions, current direction n+GaN layer 110.Current path also forms one or more path 130(by metal level and also can utilize it that electric bypass of very thin (the about 25 dusts) resilient coating 145 between n+ or p+ substrate 105 and n+GaN layer 110 is provided).The addition type of path 131-134 has hereinafter been described.One or more metal levels 120 be illustrated as two (or more) separately the metal level 120A of deposition and 120B(they also can be used for forming path 130), this metal level provides the ohmic contact with p+GaN layer 115, and the second additional metal layer 120B is used to form " projection " or raised structures, and metal level 120A, 120B form terminal (or contact) 125 of the first electricity of diode 100-100J.For the exemplary diode 100 that illustrates, 100A, 100B, 100C embodiment, it is terminal that electricity terminal 125 can be the only ohmic metal that forms at diode 100,100A, 100B, 100C during the manufacturing, the electricity (voltage) that is used for subsequently transmits (being used for LED uses) or receives (being used for photovoltaic application), and n+ or p+ substrate 105 are used for providing the second electricity of diode 100,100A, 100B, 100C terminal, are used for electricity transmission or acceptance.Should be pointed out that electricity terminal 125 and n+ or p+ substrate 105 lay respectively at opposite side, top (the first side) and the bottom of diode 100,100A, 100B, 100C (or back, the second side), and be not positioned at same side.As a kind of selection of these diodes 100,100A, 100B, 100C embodiment and shown in other exemplary diode embodiment, use metal level 122 to form the second optional ohmic metal end 127 at the second dorsal surface of diode (for example diode 100D, 100F, 100G, 100J).The passivation layer that utilizes silicon nitride passivation 135(or any other to be equal to) etc. be used for electric insulation and ambient stable.Do not illustrate separately, as described belowly form a plurality of grooves 155 along the side of diode 100 – 100J during manufacture, it is used for making diode 100 – 100J separated from one another and be used for diode 100 – 100J are separated with the residual fraction of wafer 150,150A at wafer 150,150A.
Figure 1 – 20 also shows a plurality of shapes in one or more luminous (or light absorption) zone 140 and some in the form factor, and they are expressed as various shape and the form factor of GaN heterostructure (n+GaN layer 110, quantum well zone 185 and p+GaN layer 115) and substrate 105.Equally as shown in the figure; although being the hexagon in the x-y plane basically, exemplary diode 100 – 100J (have side 121 crooked or arc; recessed or protruding; as hereinafter more describing in detail) with provide each silicon chip than bigger device density; but think other diode shapes and profile be equal to and in being subjected to the invention scope of claims protections, such as square, triangle, octagon, circle etc.Equally shown in exemplary embodiment, hexagon side 121 also can be crooked or (Fig. 1,2,4,5,11,12,15,16,18,19) arc, protruding, recessed (Figure 69) slightly, so that when from wafer, discharging and floating on a liquid, diode 100-100J can avoid adhering to each other or absorption, and can be used for equipment 300,300A, 300B manufacturing, stand on their side or edge (121) to avoid single die head (single diode 100-100J).Equally shown in exemplary embodiment, hexagon side 121 also can be slight curving or arc, around the center for each face 121 be protruding and periphery/side direction is recessed, with the somewhat sharp-pointed summit of formation (Figure 112 0), so that when from wafer, discharging and floating on a liquid, diode 100-100J can avoid adhering to each other or absorption and can repel each other when rolling or when moving with respect to another diode reverse, and can be used for equipment 300,300A, 300B makes, and stands on their side or edge (121) to avoid single die head (single diode 100 – 100J).
Also show luminous (or light absorption) regional 140(n+GaN layer 110, quantum well zone 185 and p+GaN layer 115) difformity and form factor, figure 1 – 3 shows basically circular or dish-shaped luminous (or light absorption) regional 140(n+GaN layer 110, quantum well zone 185 and p+GaN layer 115), and Figure 4 and 5 show basically luminous (or light absorption) regional 140(n+GaN layer 110, quantum well zone 185 and the p+GaN layer 115 of annular (or ring-type)), the second metal level 120B extends to annular center (and reflecting surface is provided potentially).In Fig. 6 and 7, luminous (or light absorption) regional 140(n+GaN layer 110, quantum well zone 185 and p+GaN layer 115) have basically circular interior (side) surface and foliated outer (side) surface basically, and in Fig. 8 and 9, luminous (or light absorption) regional 140(n+GaN layer 110, quantum well zone 185 and p+GaN layer 115) also have basically circular interior (side) surface, and outer (side) surface be basically star or starlike.In Fig. 11 – 20, one or more luminous (or light absorption) zone 140 has the surface of hexagon (side) basically (its can or non-extensible periphery to die head) and can have (at least in part) interior (side) surface of circle basically.In the exemplary embodiment that other do not illustrate separately, can there be a plurality of luminous (or light absorption) zone 140, it can be continuous or can be that the space separates at die head.Can use one or more luminous (or light absorption) regional 140(n+GaN layer 110 with rounded internal surface, quantum well zone 185 and p+GaN layer 115) these not isomorphism type to improve the potentiality of light output (using for LED) and light absorption (for photovoltaic application).
In one exemplary embodiment, the end 125 that comprises one or more metal level 120A, 120B has projection or raised structures, so that a big chunk of diode 100-100J be coated with one or more insulating barriers (by the first conductor 310A and n+ or p+ silicon substrate 105(or with the second end that forms by metal level 122) form electrically contact after), simultaneously by one or more other conductive layers for example following transparent conductor 320 the abundant structure of contact electricity terminal 125 is provided.In addition, except the curvature of side 121, terminal 125 projection or raised structures can be also potentially that the diode 100-100J that affect in the diode printing ink rotates and the factor of its direction (top is towards following formula (forward bias) or bottom-up formula (reverse bias)) subsequently in process equipment 300,300A, 300B.
Referring to Fig. 11 – 20, the exemplary diode 100D of multiple combination, 100E, 100F, 100G show a plurality of additional and optional features.As shown in the figure, the metal level 120B that forms projection or raised structures is basically oval (or oval) around it, rather than basically circular around, but other shapes of terminal 125 and form factor are also in the scope of the present disclosure.In addition, the metal level 120B that forms projection or raised structures has two or more elongated extensions 124, they are used for a plurality of additional purposes in equipment 300,300A, 300B are made, for example be conducive to form to electrically contact and be conducive to insulative dielectric 315 with the second transparent conductor 320 flow out terminal 125(metal level 120B).The elliptical shape factor also can allow along the major axis side of the oval metal level 120B that forms projection or raised structures additional from luminous (or light absorption) zone 140 luminous (or light absorption) or luminous to this zone.With p+GaN layer 115 form ohmic contact metal level 120A(its also can in a plurality of steps, be deposited as multilayer) on p+GaN layer 115, also have an elongated extension, be expressed as crooked hard contact extension 126, be conducive to electric current and conduct to p+GaN layer 115, allow simultaneously the potentiality of (and exceeding obstructions) luminous (or light absorption) regional 140 luminous or light absorption.Also can be equal to a plurality of other shapes of utilizing hard contact extension 126, such as lattice, other curve shapes etc.
Except periphery (namely, eccentric) outside, the access structure of other types (131,132,133,134) is also shown in Fig. 11 – 20, aforementioned superficial or " blind " path 130 extends through resilient coating 145 and enters substrate 105 in processing diode 100,100A, 100B, 100C, but without comparison deeply or pass substrate 105.Shown in Figure 13 (with Figure 39,48), center (or center), deep " penetrating " path 131 extends fully through substrate 105, and its for the preparation of and the ohmic contact of n+GaN layer 110 and conduction current (or in other words prepare electrically contact) between second (back of the body) side metal layer 122 and n+GaN layer 110.As shown in figure 14, (or center), the superficial or blind path 132(in center is also referred to as " blind " path 132) extend through resilient coating 145 and enter substrate 105, and its for the preparation of and the ohmic contact of n+GaN layer 110 and conduction current (or in other words prepare electrically contact) between n+GaN layer 110 and substrate 105.Shown in Figure 15-17 and 44 – 45, although periphery, deep or through hole 133 is coated with passivation layer 135 along side 121() extend to the second dorsal surface of diode 100F from n+GaN layer 110, it also comprises fully in this embodiment around second (back of the body) side metal layer 122 of the side of substrate 105, and it for the preparation of and the ohmic contact of n+GaN layer 110 and conduction current (or in other words prepare electrically contact) between second (back of the body) side metal layer 122 and n+GaN layer 110.Shown in Fig. 18 – 20, periphery, deep through hole 134 extends fully through substrate 105, and its for the preparation of and the ohmic contact of n+GaN layer 110 and conduction current (or in other words prepare electrically contact) between second (back of the body) side metal layer 122 and n+GaN layer 110.In a plurality of embodiment that do not utilize second (back of the body) side metal layer 122, this type of through-hole structure (131,133,134) can be used for and conductor 310A(in equipment 300,300A, 300B) preparation electrically contacts and conduction current (or in other words prepare electrically contact) between conductor 310A and n+GaN layer 110.These through-hole structures (131,133,134) during manufacture, after by dorsal surface grinding and buffing or laser lift-off (referring to following Figure 46 and 47) listization diode, be exposed to the second dorsal surface of diode 110D, 100F, 100G, and can be exposed to or can be coated with (and electrically contact with its formation) second (back of the body) side metal layer 122(as shown in figure 48).
Through-hole structure (131,133,134) is significantly narrower than typical path known in the art.Compare 5 microns wide of 9 microns dark (extending through the height of substrate 105) of about 7 – of through-hole structure (131,133,134) and about 3 – with the conventional via of about 30 microns or larger width.
Form second terminal or contact optional second (back of the body) side metal layer 122 of 127 also shown in Fig. 11 – 13,17,18,20 and 48.This type of is second terminal or contact 127 and for example and unrestrictedly can be used for promoting that electric current is transmitted to n+GaN layer 110, for example by multiple through-hole structure (131,133,134), and/or is used for promoting forming with conductor 310A and electrically contacts.
All sizes of diode 100 – 100J are generally less than about 450 microns, and more specifically all sizes less than about 200 microns, and more specifically all sizes less than about 100 microns, and more specifically all sizes less than 50 microns.In the exemplary embodiment that illustrates, the width of diode 100 – 100J generally is approximately 15 to 40 microns, perhaps more specifically width is about 20 to 30 microns, and highly be about 10 to 15 microns, perhaps diameter is about 25 to 28 microns (measure the side to face but not summit to the limit) and highly be 10 to 15 microns.In the exemplary embodiment, do not comprise the metal level 120B that forms projection or raised structures diode 100-100J height (namely, the height that comprises the side 121 of GaN heterostructure) is about 5 to 15 microns, perhaps more specifically 7 to 12 microns, perhaps more specifically 8 to 11 microns, perhaps more specifically 9 to 10 microns, perhaps more specifically less than 10 to 30 microns, and the height that forms the metal level 120B of projection or raised structures generally is approximately 3 to 7 microns.The size of diode can for example be used the size of light microscope (it also can comprise Survey Software) measuring diode when being engineered in the tolerance of selecting during making at device.As additional example, can use the size of ESEM (SEM) for example or Horiba ' s LA-920 measuring diode.Horiba LA-920 equipment is measured granularity and the distribution of particle in dilute solution with low-angle Fraunhofer diffraction and light scattering principle, for example when being presented as diode printing ink.All granularities are measured according to their average particulate diameter number.
Can use any semiconductor fabrication processing diode 100 – 100J, described technology is current known or following the exploitation.Fig. 21 – 48 shows the illustrative methods of the exemplary diode 100 – 100J of a plurality of manufacturings, and shows a plurality of additional exemplary diode 100H, 100I and 100J(profiles).Person of skill in the art will appreciate that make diode 100 – 100J a plurality of different steps arbitrarily different order carry out, can in other order, omit or comprise, and except the structure shown in those, also can produce the countless versions diode structure.For example, Fig. 33 – 39 show the preparation of the diode 100H that comprises respectively center and penetrating (or dark) path 131 of periphery and 134, the parts of its diode combination 100D and 100G, has or do not have optional second (back of the body) side metal layer 122, Figure 40-45 shows the preparation of the diode 100I that comprises peripheral path 133, it has or does not have optional second (back of the body) side metal layer 122, and it can make up to comprise center or periphery through hole 131 and 134 with the manufacturing step shown in other, for example is used to form diode 100F.
Figure 21,22 and 24 – 32 illustrate the profile of making the illustrative methods of diode 100,100A, 100B, 100C according to instruction of the present invention, and Fig. 21 – 24 shows the manufacturing on wafer 150 levels, and Fig. 25 – 32 show the manufacturing on diode 100,100A, 100B, 100C level.Figure 21 and Figure 22 are the wafer 150(silicon chips for example with silicon dioxide (or " oxide ") layer 190) profile.Figure 23 is the top view that has with the silicon chip 150 of the etched silicon dioxide layer 190 of lattice.About 0.1 micron of oxide skin(coating) 190(general thickness) is deposited on the wafer 150 or on it and grows, as shown in figure 21.As shown in figure 22, by sheltering and/or photoresist layer and etching of suitable or standard known in the art, removed partial oxide layer 190, the oxide skin(coating) 190(that has stayed lattice is also referred to as " networking "), as shown in figure 23.
Figure 24 is for example silicon chip of wafer 150() profile, described wafer has resilient coating 145, silicon dioxide (or " oxide ") layer 190 and GaN layer (in one exemplary embodiment usually to outgrowth or be deposited into the thickness of about 1.252.50 micron, but less or larger thickness is also in the scope of the present disclosure), be expressed as the polycrystal GaN 195 on oxide skin(coating) 190, and n+GaN layer 110, quantum well zone 185 and p+GaN layer 115 form compound GaN heterostructure as mentioned above.As indicated above, resilient coating 145(such as aluminium nitride or silicon nitride, and general thickness is about 25 dusts) be deposited on the GaN deposition that is beneficial on the silicon chip 150 subsequently.The polycrystal GaN 195 of growth or deposition is used for reducing stress and/or the pressure (for example because the hot mispairing of GaN and silicon chip) at compound GaN heterostructure (n+GaN layer 110, quantum well zone 185 and p+GaN layer 115) on oxide skin(coating) 190, and it has monoclinic crystal structure usually.Other equivalent processes that are used within the scope of the present invention providing this type of pressure and/or stress to reduce for example and unrestrictedly comprise that roughening silicon chip 150 and/or resilient coating 145 are on the surface of selecting the zone, so that corresponding GaN zone will not be monocrystal or the etching bath in silicon chip 150, so that also stride across whole wafer 150 without continuous GaN crystallization.In other example fabrication method, can omit this type of networking formation and stress and reduce manufacturing step, for example when utilizing other substrate such as the GaN(substrate 105 on sapphire wafer 150A) time.Can be by the known in the art of any selection or known method and/or can be the proprietary method of device manufacturer and carry out GaN deposition or growth to form compound GaN heterostructure gradually.In one exemplary embodiment, comprise the compound GaN heterostructure of n+GaN layer 110, quantum well zone 185 and p+GaN layer 115 by Blue Photonics Inc.(Walnut, California, USA) make.
Figure 25 is the profile of substrate 105, the instruction according to the present invention of this substrate has resilient coating 145 and compound GaN heterostructure (n+GaN layer 110, quantum well zone 185 and p+GaN layer 115), the figure shows the very little part (for example zone 191 of Figure 24) of wafer 150, thereby show the manufacturing of single diode 100,100A, 100B, 100C.By sheltering and/or photoresist layer and etching of suitable or standard known in the art, the compound GaN heterostructure of etching (n+GaN layer 110, quantum well zone 185 and p+GaN layer 115) is to form GaN mesa structure 187, shown in Figure 26 and 27, and Figure 27 shows the GaN mesa structure 187A with larger angle side, and it can be conducive to luminous and/or light absorption potentially.Also can use other GaN mesa structures 187, for example partially or substantially the annular GaN mesa structure 187, shown in Figure 10,13,14,17,20,34-39 and 48.Behind the GaN mesa etch, also by known in the art or gradually known suitable or standard shelter and/or (shallow or blind) path etching is implemented in photoresist layer and etching, as shown in figure 28, produce by GaN layer and resilient coating 145 and enter the superficial groove 186 of silicon substrate 105.
Also by the sheltering and/or the photoresist layer of suitable or standard known in the art, the plated metal layer forms hard contact 120A and forms path 130 with p+GaN layer 115, as shown in figure 29 subsequently.In the exemplary embodiment, the deposit multilayer metal, first or initiation layer be used to form ohmic contact with p+GaN layer 115, generally include two metal levels, every layer of about 50 to 200 dust, gold is being annealed in the oxidizing gas of about 20% oxygen and 80% nitrogen under about 450-500 ℃ subsequently behind the first nickel, cause nickel to rise to the top of nickel oxide layer, and form and have the metal level (as the part of 120A) that has reasonable ohmic contact with p+GaN layer 115.Also can deposit another metal layer, for example be used to form thicker interconnecting metal with setting and fully form metal level 120A(and for example distribute for electric current) and be used to form path 130.At (shown in Fig. 40 – 45) in another exemplary embodiment, the hard contact 120A that forms ohmic contact with p+GaN layer 115 can form before the GaN mesa etch, carries out subsequently GaN mesa etch, path etching etc.Other method for metallising of countless versions and the corresponding material that comprises metal level 120A and 120B are also in the scope of the present disclosure, and different manufacturing equipments often utilizes diverse ways and material to select.For example and unrestrictedly, among metal level 120A and the 120B any or two can followingly form: titanium deposition is to form bur or crystal seed layer, its common thickness is 50 –, 200 dusts, deposit subsequently nickel and thin layer or " dodging layer " gold (" dodging layer " gold is that thickness is the layer of gold of about 50 –, 500 dusts) of 4 microns of 2 –, the aluminium that 3 – 5 microns, then nickel deposited is (about 0.5 micron, physical vapour deposition (PVD) or plating) and " dodging layer " gold, perhaps pass through titanium deposition, deposited gold subsequently, then nickel deposited (thickness of 120B is generally 5 microns of 3 –), then deposited gold is perhaps passed through deposition of aluminum, subsequently nickel deposited, then deposited gold etc.In addition, the height that forms the metal level 120B of projection or raised structures also can be different, in the exemplary embodiment usually between 5.5 microns of about 3.5 –, this depends on the thickness (for example the GaN of 8 microns of about 7 – is to about 10 microns silicon) of substrate 105, and it has basically uniformly height and form factor for gained diode 100 – 100J.
Subsequently by suitable or standard known in the art shelter and/or photoresist layer and etching are singly changed diode 100-100J and listization from wafer 150 each other, shown in Figure 30 and other Figure 35 and 43, periphery around each diode 100 – 100J for example forms groove 155(, also shown in Fig. 2,5,7 and 9).Groove 155 be generally 5 microns wide of about 3 – and 12 microns of 10 – dark.As shown in figure 31, also use sheltering and/or photoresist layer and etching of suitable or standard known in the art, make subsequently nitride passivation layer 135 growths or deposition, the thickness of general growth or the about 0.35-1.0 micron of deposition, for example and unrestrictedly the plasma enhanced chemical vapor deposition (PECVD) by silicon nitride carries out, and removes unexpected silicon nitride region by photoresist and etching step subsequently.By sheltering and/or photoresist layer and etching of suitable or standard known in the art, form subsequently the metal level 120B with projection or raised structures, it has the high height of 3-5 micron usually, shown in figure 32.In one exemplary embodiment, being formed in a plurality of steps of metal level 120B carried out: utilize metal seed layer, use subsequently plating or stripping means to carry out more metal depositions, remove against corrosion and removing crystal seed layer zone.Except subsequently listization diode (in the situation of diode 100,100A, 100B, 100C) from wafer 150 as described below, diode 100,100A, 100B, 100C are complete, and should be noted that these complete diodes 100,100A, 100B, 100C only have a hard contact or end (the first end 125) at the upper surface of each diode 100,100A, 100B, 100C.As a kind of selection, can be as described below and make second (back of the body) side metal layers 122 with reference to above-mentioned other exemplary diodes, for example be used to form the second end 127.
Fig. 33 – 39 show another illustrative methods that diode 100 – 100J make, and Figure 33 shows the manufacturing in wafer 150A level, and Fig. 34 – 39 show the manufacturing in diode 100 – 100J levels.Figure 33 is the profile of wafer 150A, and this wafer has substrate 105 and has compound GaN heterostructure (n+GaN layer 110, quantum well zone 185 and p+GaN layer 115).In this exemplary embodiment, a thicker GaN layer is in sapphire (106) (sapphire wafer 150A) growth or deposition (to form substrate 105), subsequently in GaN heterostructure (n+GaN layer 110, quantum well zone 185 and p+GaN layer 115) deposition or growth.
Figure 34 is the profile of substrate 105, described substrate has the compound GaN heterostructure of the 3rd mesa etch, show the very little part (for example zone 192 of Figure 33) of wafer 150A, thereby show the manufacturing of single diode (for example diode 100H).By sheltering and/or photoresist layer and etching of suitable or standard known in the art, the compound GaN heterostructure of etching (n+GaN layer 110, quantum well zone 185 and p+GaN layer 115) is to form GaN mesa structure 187B.Behind the GaN mesa etch, also by known in the art or gradually known suitable or standard shelter and/or (penetrating or dark) path groove and listization trench etch implemented in photoresist layer and etching, as shown in figure 35, formation is passed the non-table top part of GaN heterostructure (n+GaN layer 110) and is passed the one or more deep path groove 188 of the sapphire (106) of GaN substrate 105 to wafer 150A, and forms above-mentioned listization groove 155.As shown in the figure, central corridor groove 188 and a plurality of periphery path groove 188 have been formed.
Also by the sheltering and/or photoresist layer and etching of suitable or standard known in the art, the plated metal layer forms central through hole 131 and a plurality of periphery through hole 134 subsequently, and they also form the ohmic contact with n+GaN layer 110, as shown in figure 36.In the exemplary embodiment, the deposit multilayer metal is to form through hole 131,134.For example, can spray titanium and tungsten with the side that applies groove 188 and bottom to form crystal seed layer, subsequently electronickelling is to form solid metal path 131,134.
Also by the sheltering and/or photoresist layer and etching of suitable or standard known in the art, the plated metal layer forms metal level 120A subsequently, and it provides the ohmic contact with p+GaN layer 115, as shown in figure 37.In the exemplary embodiment, as mentioned before the deposit multilayer metal to form metal level 120A and to the ohmic contact of p+GaN layer 115.As shown in figure 38, also use sheltering and/or photoresist layer and etching of suitable or standard known in the art, make subsequently nitride passivation layer 135 growths or deposition, generally grow or deposit the thickness of 1.0 microns of about 0.35 –, for example and unrestrictedly the plasma enhanced chemical vapor deposition (PECVD) by silicon nitride or silicon oxynitride carries out, and removes unexpected silicon nitride region by photoresist and etching step subsequently.By sheltering and/or photoresist layer and etching of suitable or standard known in the art, form subsequently the metal level 120B with projection or raised structures, as shown in figure 39.In one exemplary embodiment, the formation of metal level 120B is also carried out in a plurality of steps as mentioned above: utilize metal seed layer, use subsequently plating or stripping means to carry out more metal depositions, remove against corrosion and removing crystal seed layer zone.Except subsequently listization diode (in the situation of diode 100H) from wafer 150A as described below, diode 100H is complete, and should be noted that these complete diode 100H also only have a hard contact or end (also being the first end 125) at the upper surface of each diode 100H.Also as a kind of selection, can be as described below and make second (back of the body) side metal layers 122 with reference to above-mentioned other exemplary diodes, for example be used to form the second end 127.
Fig. 40 – 45 shows another illustrative methods that diode 100 – 100J make, and Figure 40 shows the manufacturing in wafer 150 or 150A level, and Fig. 41 – 45 shows the manufacturing in diode 100 – 100J levels.Figure 40 is the profile of substrate 105, and described substrate has resilient coating 145, compound GaN heterostructure (n+GaN layer 110, quantum well zone 185 and p+GaN layer 115) and forms the metal layer (metal level 120A) of ohmic contact with the p+GaN layer.As mentioned above, usually when substrate 105 is silicon (for example, using silicon chip 150), make resilient coating 145, and the resilient coating of other substrates such as GaN substrate 105 can be omitted.In addition, as a kind of selection sapphire 106 is shown, for example is used for the thick GaN substrate 105 in sapphire wafer 150A growth or deposition.Also as mentioned above, in step early, deposited the subsequently crystal seed layer of depositing metal layers 120A of metal level 119(conduct), make subsequently GaN heterostructure (n+GaN layer 110, quantum well zone 185 and p+GaN layer 115) deposition or growth, rather than in diode manufacturing step subsequently depositing metal layers 119.For example, metal level 119 can be has a nickel that dodges layer gold, the have an appointment gross thickness of hundreds of dust of described sudden strain of a muscle layer gold utensil.
Figure 41 has resilient coating, the compound GaN heterostructure of the 4th mesa etch and forms the profile of substrate of the metal layer (metal level 119) of ohmic contact with the p+GaN layer, the figure shows the very little part (for example zone 193 of Figure 40) of wafer 150 or 150A, thereby show the manufacturing of single diode (for example, diode 100I).By sheltering and/or photoresist layer and etching of suitable or standard known in the art, the compound GaN heterostructure of etching (n+GaN layer 110, quantum well zone 185 and p+GaN layer 115) (having metal level 119) has metal level 119 to form GaN mesa structure 187C().Behind the GaN mesa etch, also by known in the art or gradually known suitable or standard shelter and/or photoresist layer plated metal (uses above-mentioned any method and metal, for example titanium and aluminium, anneal subsequently) to form metal level 120A and to form metal level 129, this layer has the ohmic contact with n+GaN layer 110, as shown in figure 42.
After metallization, also by known in the art or gradually known suitable or standard shelter and/or the listization trench etch is implemented in photoresist layer and etching, as shown in figure 43, pass the non-table top part of GaN heterostructure (n+GaN layer 110) and pass or deep the substrate 105(that gos deep into for example passes GaN substrate 105 as mentioned above to the sapphire (106) of wafer 150A or a part of passing silicon substrate 105), and form above-mentioned listization groove 155.
Also sheltering and/or photoresist layer and etching by suitable or standard known in the art, metal layer is deposited in the groove 155 subsequently, form penetrating or dark peripheral path 133(whole periphery or the peritropous conduction of side around diode (100I) are provided, it also forms the ohmic contact with n+GaN layer 110, as shown in figure 44.In the exemplary embodiment, also multiple layer metal can be deposited to form penetrating peripheral path 133.For example, can spray titanium and tungsten with the side that applies groove 155 and bottom to form crystal seed layer, subsequently electronickelling is to form solid metal periphery path 133.
As shown in figure 45, also use sheltering and/or photoresist layer and etching of suitable or standard known in the art, make subsequently nitride passivation layer 135 growths or deposition, generally make the thickness of its growth or the about 0.35-1.0 micron of deposition, for example and unrestrictedly the plasma enhanced chemical vapor deposition (PECVD) by silicon nitride carries out, and removes unexpected silicon nitride region by photoresist and etching step subsequently.By sheltering and/or photoresist layer and etching of suitable or standard known in the art, form as mentioned above subsequently the metal level 120B with projection or raised structures, as shown in figure 45.Except subsequently listization diode (in the situation of diode 100I) from wafer 150 or 150A as described below, diode 100I is complete, and should be noted that these complete diode 100I also only have a hard contact or end (also being the first end 125) at the upper surface of each diode 100I.Also as a kind of selection, can be as described below and make second (back of the body) side metal layers 122 with reference to above-mentioned other exemplary diodes, for example be used to form the second end 127.
According to instruction of the present disclosure, can be apparent, that all modification are considered to be equal to and in the scope of the present disclosure for the manufacture of a plurality of modification of the method for diode 100 – 100J.In other exemplary embodiments, the formation of the formation of this type of groove 155 and (nitride) passivation layer can be carried out before or after device producing method.For example, groove 155 can made later stage formation, form after metal level 120B forms, and can stay the substrate 105 of exposure, perhaps can carry out subsequently the passivation second time.For example groove 155 also can for example form after the GaN mesa etch making early origin, carries out subsequently the deposition of (nitride) passivation layer 135.In a rear example, in order to remain on the plane during the bascule manufacture process, deactivation slot 155 can be filled with oxide, photoresist or other materials (deposit described layer, use subsequently photoresist to shelter with etching or the non-engraving method of sheltering and remove unexpected zone) or can fill (and may recharge) after hard contact 120A forms resist.In another example, silicon nitride 135 depositions (sheltering subsequently and etching step) can carried out behind the GaN mesa etch and before hard contact 120A deposition.
Although it should also be noted that multiple different diode (diode 100 – 100J) has been discussed, silicon and the GaN semiconductor that can be or select wherein, other inorganic or organic semiconductors can be equal to be utilized and in the scope of the present disclosure.The example of inorganic semiconductor unrestrictedly comprises: silicon, germanium and their mixture; Titanium dioxide, silicon dioxide, zinc oxide, tin indium oxide, antimony tin and their mixture; The II-VI semiconductor, they are the compound of at least a divalent metal (zinc, cadmium, mercury and lead) and at least a divalence nonmetal (oxygen, sulphur, selenium and tellurium), for example zinc oxide, cadmium selenide, cadmium sulfide, mercury selenide and their mixture; The III-V semiconductor, they are the compound of at least a trivalent metal (aluminium, gallium, indium and thallium) and at least a trivalent nonmetal (nitrogen, phosphorus, arsenic and antimony), for example GaAs, indium phosphide and their mixture; With the IV based semiconductor, comprise silicon, carbon, germanium and the alpha tin of hydrogen end-blocking and their combination.
Except GaN luminous/photo-absorption region 140(for example is deposited on the GaN heterostructure on the substrate 105, such as n+ or p+ silicon or be deposited on GaN(105 on sapphire (106) the wafer 150A) on), a plurality of diode 100-100J can comprise semiconductor element, material or the compound of any type, for example silicon, GaAs (GaAs), gallium nitride (GaN) or any inorganic or organic semiconducting materials and any type of material also for example and unrestrictedly comprise GaP, InAlGaP, InAlGaP, AlInGaAs, InGaNAs, AlInGASb.
Figure 46 is the profile that exemplary silicon chip 150 embodiment are shown, described silicon chip have adhere to chucking device 160(for example clamping shank or clamper wafer) a plurality of diodes 100 – 100J.Figure 47 is the profile that the exemplary diode sapphire wafer 150A embodiment that adheres to chucking device 160 is shown.Shown in Figure 46 and 47, use the wafer bonding agent of any known commercially available acquisition or wafer bond 165 will comprise that a plurality of diode 100 – 100J(that do not discharge are generally that task of explanation illustrates and without any significant component detail) diode wafer 150,150A adhere to the chucking device 160(wafer holder for example of the first side of diode wafer 150, the 150A of the diode 100 – 100J with processing).As shown in the figure and as mentioned above, listization or the individuation groove 155 of the nitride passivation between each diode 100 – 100J have formed during wafer process, for example form by etching, and be used for subsequently separating each diode 100 – 100J and need not mechanical means such as sawing from contiguous diode 100 – 100J.As shown in figure 46, although diode wafer 150 still adheres to chucking device 160, the second dorsal surface 180 of diode wafer 150 is mechanical grinding and the level (dotting) that is polished to exposure nitride deactivation slot 155 then.When abundant polishing and when polishing, each single diode 100 – 100J from discharging each other with the diode wafer 150 of any remnants, still adheres to chucking device 160 with adhesive 165 simultaneously.As shown in figure 47, although diode wafer 150A also still adheres to chucking device 160, then the second dorsal surface 180 of diode wafer 150A is exposed to laser (being expressed as one or more laser beams 162), then laser separates (dotting) GaN substrate 105(and is also referred to as laser lift-off from the sapphire 106 of wafer 150A), thereby from discharging each single diode 100 – 100J each other with the wafer 150A, still adhere to chucking device 160 with adhesive 165 simultaneously.In this exemplary embodiment, then can polish and/or polish and recycle wafer 150A.
Generally also using epoxides globule (not illustrating in addition) at the periphery of wafer 150 is discharged into diode (100-100J) fluid from Waffer edge in following diode dispose procedure to prevent non-diode fragment.
Figure 48 is the profile that the exemplary diode 100J embodiment that adheres to chucking device is shown.Behind listization diode 100-100J (as mentioned above, referring to Figure 46 and 47), although and diode 100-100J still adhere to chucking device 160 with adhesive 165, the second dorsal surface of diode 100-100J exposes.As shown in figure 48, then metal layer can be deposited to the second dorsal surface, for example by vapour deposition (making angled to avoid filling described groove 155), form the second dorsal surface metal level 122 and diode 100J embodiment.Also as shown in the figure, diode 100J has a central through hole 131, and described path has with the ohmic contact of n+GaN layer 110 and contacts the second dorsal surface metal level 122 with conduction current between n+GaN layer 110 and the second dorsal surface metal level 122.Exemplary diode 100D is very similar, and exemplary diode 100J has the second dorsal surface metal level 122 to form the second end 127.As indicated above, the second dorsal surface metal level 122(or substrate 105 or any a plurality of through hole 131,133,134) can be used for preparing in equipment 300,300A, 300B and being electrically connected of the first conductor 310, be used for energization diode 100 – 100J.
Figure 49,50 and 51 is respectively the flow chart that exemplary the first method, the second method and the third method embodiment of diode 100 – 100J manufacturing are shown, and useful general introduction is provided.Should be pointed out that and to carry out a plurality of steps of these methods by any a plurality of order, and also can in other illustrative methods, utilize the step of an illustrative methods.Therefore, each method will relate generally to the manufacturing of any diode 100 – 100J, rather than the manufacturing of particular diode 100 – 100J embodiment, and person of skill in the art will appreciate which step can be " mix and mate " diode 100 – 100J embodiment to produce any selection.
Referring to Figure 49, start from 240, one oxide skin(coating)s of initial step in semiconductor wafer such as silicon chip growth or deposition, step 245.The described oxide skin(coating) of etching is for example to form grid or other patterns, step 250.Make resilient coating and luminous or photo-absorption region (for example GaN heterostructure) growth or deposition, step 255, and be etched with subsequently the mesa structure that forms each diode 100-100J, step 260.Then etched wafer 150 is to form path groove, step 265 in the substrate 105 of each diode 100 – 100J.Then deposit hard contact and the path of one or more metal layers to form each diode 100-100J, step 270.Then etching listization groove between diode 100-100J, step 275.Then make passivation layer growth or deposition, step 280.Then make projection or projection metal structure deposition or growth at hard contact, step 285, and can finish described method, return step 290.Should be pointed out that and to implement a plurality of in these manufacturing steps by different material and reagent, and described method can comprise above-mentioned other modification and order of steps.
Referring to Figure 50, start from initial step 500, make thicker GaN layer (for example 7-8 micron) growth or deposition, step 505 at wafer such as sapphire wafer 150A.Make luminous or photo-absorption region (for example GaN heterostructure) growth or deposition, step 510, and be etched with subsequently the mesa structure (on the first side of each diode 100-100J) that forms each diode 100-100J, step 515.Then etched wafer 150 is to form one or more penetrating or dark path grooves and listization groove, and they enter the substrate 105 of each diode 100 – 100J, step 520.Then deposit one or more metal layers to form the through hole of each diode 100 – 100J, it can be center through hole, periphery through hole or peripheral through hole (being respectively 131,134,133), usually form by deposit seed, step 525, the metal deposition that then uses above-mentioned any method to add.Also plated metal with form one or more and GaN heterostructure (for example with p+GaN layer 115 or with n+GaN layer 110) hard contact, step 535, and be used to form any additional electric current and distribute metal (for example, 120A, 126), step 540.Then make passivation layer growth or deposition, step 545, as indicated above and shown in etching or remove the zone.Then make projection or projection metal structure (120B) deposition or growth, step 550 at one or more hard contacts.Then wafer 150A is connected to holding chip, step 555, and remove sapphire or other wafers (for example, passing through separation by laser) with listization or individuation diode 100 – 100J, step 560.Then deposit metal on the second dorsal surface of diode 100 – 100J to form the second dorsal surface metal level 122, step 565, and described method can finish, and returns step 570.Also should be pointed out that and to implement a plurality of in these manufacturing steps by different material and reagent, and described method can comprise above-mentioned other modification and order of steps.
Referring to Figure 51, start from initial step 600, make thicker GaN layer (for example 7 – 8 microns) growth or deposition, step 605 at wafer 150 such as sapphire wafer 150A.Make luminous or photo-absorption region (for example GaN heterostructure) growth or deposition, step 610.Plated metal with form one or more and GaN heterostructure (for example with p+GaN layer 115, hard contact as shown in figure 40), step 615.Luminous or photo-absorption region (for example GaN heterostructure) and metal contact layer (119) be etched mesa structure (on the first side of each diode 100-100J) to form each diode 100-100J subsequently, step 620.Plated metal is to form one or more and GaN heterostructure (for example n+ metal contact layer 129 and n+GaN layer 110, hard contact as shown in figure 42), step 625.Then etched wafer 150A is to form one or more penetrating or dark path grooves and/or listization groove, and they enter the substrate 105 of each diode 100-100J, step 630.Then use any above-mentioned metal deposition to deposit one or more metal layers forming the through hole of each diode 100-100J, step 635, described through hole can be center through hole, periphery through hole or peripheral through hole (being respectively 131,134,133).Also plated metal with form one or more and GaN heterostructure (for example with p+GaN layer 115 or with n+GaN layer 110) hard contact, and be used to form any additional electric current and distribute metal (for example 120A, 126), step 640.If do not prepare listization groove (in step 630) before, etching listization groove then, step 645.Then make passivation layer growth or deposition, step 650, as indicated above and shown in etching or remove the zone.Then make projection or projection metal structure (120B) deposition or growth, step 655 at one or more hard contacts.Then wafer 150,150A are connected to holding chip, step 660, and remove sapphire or other wafers (for example by separation by laser or dorsal surface grinding and buffing) with listization or individuation diode 100 – 100J, step 665.Then deposit metal on the second dorsal surface of diode 100 – 100J to form the second dorsal surface conduction (for example metal) layer 122, step 670, and described method can finish, and returns step 675.Also should be pointed out that and to implement a plurality of in these manufacturing steps by different material and reagent, and described method can comprise above-mentioned other modification and order of steps.
Figure 52 be illustrate that single diode 100 – 100J(are generally also that task of explanation illustrates and without any significant component detail) profile, described diode is coupled to diode wafer 150,150A upper (because having been polished now or polished or separate (laser lift-off) to expose listization (individuation) groove 155 fully in the second side of diode wafer 150,150A) no longer together, but they adhere to chucking device 160 with wafer bonding agent 165 and are suspended in or immerse in the dish 175 with wafer bonding agent solvent 170.Can utilize any suitable dish 175, culture dish for example, illustrative methods is utilized polytetrafluoroethylene (PTFE or teflon) dish 175.Wafer bonding agent solvent or wafer combination that wafer bonding agent solvent 170 can be any commercially available acquisition remove agent, comprise that unrestrictedly for example 2-dodecylene wafer is in conjunction with removing agent, it is available from Brewer Science, Inc.(Rolla, Missouri, USA), the perhaps alkane of any other relative long-chain or alkene or than heptane or the heptene of short chain.The diode 100-100J that adheres to chucking device 160 is immersed wafer bonding agent solvent 170 about five to about 15 minutes, and usually at room temperature (for example under about 65 ℉, 75 ℉ or the higher temperature) carries out, and also can carry out sonication in the exemplary embodiment.Because wafer bonding agent solvent 170 dissolved adhesives 165, diode 100-100J from adhesive 165 separate with chucking device 160 and most or general individually or sink in groups or agglomeratingly the bottom of dish 175.When whole or most of diode 100-100J had discharged from chucking device 160 and have been deposited to dish 175 bottom, the wafer bonding agent solvent 170 of chucking device 160 and a part of current use removed from dish 175.Then add the more about 120-140mL of wafer bonding agent solvent 170(), and usually under room temperature or higher temperature, stir wafer bonding agent solvent 170 and diode 100-100J(for example uses ultrasonic disruption instrument or impeller-agitator) about five to 15 minutes of mixture, again make subsequently diode 100 – 100J be deposited to the bottom of dish 175.Then repeat this method generally at least one times, so that when whole or most of diode 100 – 100J have been deposited to dish 175 bottom, from dish 175, remove the wafer bonding agent solvent 170 of a part of current use and add subsequently more (about 120 – 140mL) wafer bonding agent solvent 170, then under room temperature or higher temperature, stir about five to 15 minutes of the mixture of wafer bonding agent solvent 170 and diode 100 – 100J, again make subsequently diode 100 – 100J be deposited to the bottom of dish 175 and remove a part of remaining wafer bonding agent solvent 170.In this stage, generally will from diode 100 – 100J, remove the wafer bonding agent 165 of any remnants of capacity, perhaps repeat wafer bonding agent solvent 170 methods and disturb no longer potentially printing or the function of diode 100 – 100J to it.
Remove the wafer bonding agent 165 that wafer bonding agent solvent 170(has dissolving) or following any other solvent, solution or other liquid arbitrarily several different methods finish.For example, can remove wafer bonding agent solvent 170 or other liquid by (for example passing through pipette) such as vacuum, expiration, suction, pumpings.For example, also can be by filtering diode 100 – 100J and wafer bonding agent solvent 170(or other liquid) mixture remove wafer bonding agent solvent 170 or other liquid, for example have screen cloth or the porous silicon film in appropriate openings or aperture by use.Should be mentioned that also all different fluid of filtering use in diode printing ink (with following dielectric ink) are to remove greater than about 10 microns particle.
Diode printing ink example 1:
A kind of composition comprises:
A plurality of diode 100 – 100J; With
Solvent.
Then remove basically all or most of described wafer bonding agent solvent 170.In one exemplary embodiment and for example, with a kind of solvent, more particularly a kind of polar solvent such as isopropyl alcohol (" IPA ") add in the mixture of wafer bonding agent solvent 170 and diode 100-100J, generally at room temperature subsequently (although can be equal to the higher temperature of utilization) stir about five to 15 minutes of the mixture of IPA, wafer bonding agent solvent 170 and diode 100-100J, and then make diode 100-100J be deposited to the bottom of dish 175 and remove a part of IPA and the mixture of wafer bonding agent solvent 170.Add more IPA(120-140mL), and repeat twice of described method or more times, namely, about five to 15 minutes of the general mixture that at room temperature stirs IPA, wafer bonding agent solvent 170 and diode 100-100J, again make subsequently diode 100-100J be deposited to the bottom of dish 175 and remove a part of IPA and the mixture of wafer bonding agent solvent 170, and add more IPA.In one exemplary embodiment, the gained mixture has about 9.7 hundred ten thousand diodes, 100 – 100J for the IPA of about 100-110mL and from the per four inches wafers 150 of 1,000,000 diodes of about 9-10,100 – 100J(of four inches wafers), and transfer to subsequently in another larger container such as the PTFE wide-mouth bottle, it can comprise for example uses additional IPA that diode is additionally washed in the wide-mouth bottle.Can be for example and unrestrictedly be equal to and use one or more solvents: water; Alcohol is such as methyl alcohol, ethanol, normal propyl alcohol (comprising 1-propyl alcohol, 2-propyl alcohol (IPA)), butanols (comprising n-butyl alcohol, 2-butanols (isobutanol)), amylalcohol (comprising 1-amylalcohol, 2-amylalcohol, 3-amylalcohol), octanol, tetrahydrofurfuryl alcohol (THFA), cyclohexanol, terpineol; Ether such as ethyl methyl ether, ether, ethylene-propylene ether and polyethers; Ester such as ethyl acetate; Glycol such as ethylene glycol, diethylene glycol (DEG), polyethylene glycol, propylene glycol, glycol ether, glycol ether acetate; Carbonate such as propylene carbonate; Glycerine, acetonitrile, oxolane (THF), dimethyl formamide (DMF), N-METHYLFORMAMIDE (NMF), dimethyl sulfoxide (DMSO) (DMSO); And their mixture.The mixture of gained diode 100 – 100J and solvent such as IPA is the first example of diode printing ink, and example 1 is described as mentioned, and form that can free-standing composition provides, and for example is used for modification afterwards or also for example is used for printing.In following other exemplary embodiments, the mixture of gained diode 100 – 100J and solvent such as IPA is intermediate mixture, and it is through further revising the diode printing ink to be formed for printing, and is as mentioned below.
In a plurality of exemplary embodiments, the selection of first (or second) solvent is based at least two properties or characteristic.The first characteristic of described solvent is that it is dissolvable in water or the ability of solubilising viscosity modifier or adhesive viscosities conditioning agent such as methoxyl group cellulose or hydroxypropyl cellulose resin.The second characteristic or character are its evaporation rates, and it should be enough the slow so that screen cloth residence time long enough of diode printing ink (being used for silk screen printing) or meets other printing parameters.In a plurality of exemplary embodiments, exemplary evaporation rate is less than 1(＜1, and this is the relative speed of comparing with butyl acetate), perhaps more specifically, between 0.0001 and 0.9999.
Diode printing ink example 2:
A kind of composition comprises:
A plurality of diode 100-100J; With
Viscosity modifier.
Diode printing ink example 3:
A kind of composition comprises:
A plurality of diode 100 – 100J; With
Resolvating agent.
Diode printing ink example 4:
A kind of composition comprises:
A plurality of diode 100 – 100J; With
Wetting solvent.
Diode printing ink example 5:
A kind of composition comprises:
A plurality of diode 100 – 100J;
Solvent; With
Viscosity modifier.
Diode printing ink example 6:
A kind of composition comprises:
A plurality of diode 100 – 100J;
Solvent; With
The adhesive viscosities conditioning agent.
Diode printing ink example 7:
A kind of composition comprises:
A plurality of diode 100-100J;
Solvent; With
Viscosity modifier;
Wherein said composition is opaque when wetting, and is substantial transparent when dry.
Diode printing ink example 8:
A kind of composition comprises:
A plurality of diode 100-100J;
The first polar solvent;
Viscosity modifier; With
The second non-polar solven (perhaps rewetting lubricant nature agent).
Diode printing ink example 9:
A kind of composition comprises:
A plurality of diode 100 – 100J, any size of each diode among a plurality of diode 100 – 100J is all less than 450 microns; With
Solvent.
Diode printing ink example 10:
A kind of composition comprises:
A plurality of diode 100 – 100J; With
At least a basically on-insulated carrier or solvent.
Diode printing ink example 11:
A kind of composition comprises:
A plurality of diode 100 – 100J;
Solvent; With
Viscosity modifier;
Wherein said composition have wetting removal or greater than 25 the degree or greater than 40 the degree contact angles.
Referring to diode printing ink example 1 – 10, there is within the scope of the invention various exemplary diode ink composite.In general, as described in example 1, the suspension of diode (100 – 100J) comprises a plurality of diodes (100 – 100J) and the first solvent (for example above-mentioned IP A or following normal propyl alcohol, terpineol or diethylene glycol (DEG)); As described in example 2, the suspension of diode (100 – 100J) comprises a plurality of diodes (100-100J) and viscosity modifier (for example hereinafter described those, they also can be such as example 6 described adhesive viscosities conditioning agents); And as described in example 3 and 4, the suspension of diode (100 – 100J) comprises a plurality of diodes (100 – 100J) and resolvating agent or wetting solvent (for example following the second solvent is wherein a kind of, for example dibasic ester).More specifically, for example at example 2,5,6, in 7 and 8, the suspension of diode (100-100J) comprises a plurality of diodes (100-100J) (and/or a plurality of diode (100-100J) and the first solvent (normal propyl alcohol for example, terpineol or diethylene glycol (DEG))), and viscosity modifier (or equally, the thickness compound, adhesion agent, sticky polymers, the thickness resin, the thickness adhesive, thickener, and/or rheology modifier) or adhesive viscosities conditioning agent (hereinafter more describe in detail), thereby be provided under the room temperature (about 25 ℃) and have about 1,000 centipoise (cps) is to 20, the diode printing ink of the viscosity of 000cps (perhaps (for example 5-10 ℃) about 20 under refrigerated storage temperature, 000cps to 60,000cps), E-10 viscosity modifier as described below for example and unrestrictedly.According to viscosity, resulting composition can be equal to liquid or the gel suspension that is called diode, and no matter this paper is called liquid or gel all is interpreted as meaning and comprising another.
In addition, the viscosity of gained diode printing ink changes the type of general printing process according to utilizing, and also can change such as silicon substrate 105 or GaN substrate 105 according to the diode composition.For example, being used for the diode printing ink that diode 100 – 100J wherein have the silk screen printing of silicon substrate 105 can have at room temperature between about 5,000 centipoise (cps) and 20, viscosity between the 000cps, perhaps more specifically at room temperature between about 6,000 centipoise (cps) and 15, viscosity between the 000cps, perhaps more specifically at room temperature between about 8, viscosity between 000 centipoise (cps) and 12, the 000cps is perhaps more specifically at room temperature between about 9, viscosity between 000 centipoise (cps) and 11, the 000cps.In addition for example, being used for the diode printing ink that diode 100 – 100J wherein have the silk screen printing of GaN substrate 105 can have at room temperature between about 10,000 centipoise (cps) and 25, viscosity between the 000cps, perhaps more specifically at room temperature between about 15,000 centipoise (cps) and 22, viscosity between the 000cps, perhaps more specifically at room temperature between about 17, viscosity between 500 centipoises (cps) and 20, the 500cps is perhaps more specifically at room temperature between about 18, viscosity between 000 centipoise (cps) and 20, the 000cps.Also for example being used for the diode printing ink that diode 100 – 100J wherein have the flexographic printing of silicon substrate 105 can have at room temperature between about 1,000 centipoise (cps) and 10, viscosity between the 000cps, perhaps more specifically at room temperature between about 1,500 centipoises (cps) and 4, viscosity between the 000cps, perhaps more specifically at room temperature between about 1,700 centipoises (cps) and 3, viscosity between the 000cps, the perhaps viscosity between about 1,800 centipoise (cps) and 2,200cps at room temperature more specifically.Also for example being used for the diode printing ink that diode 100 – 100J wherein have the flexographic printing of GaN substrate 105 can have at room temperature between about 1,000 centipoise (cps) and 10, viscosity between the 000cps, perhaps more specifically at room temperature between about 2,000 centipoise (cps) and 6, viscosity between the 000cps, perhaps more specifically at room temperature between about 2,500 centipoises (cps) and 4, viscosity between the 500cps, the perhaps viscosity between about 2,000 centipoises (cps) and 4,000cps at room temperature more specifically.
Can several different methods measure viscosity.For comparing purpose; the range of viscosities a plurality of appointments of this paper and/or that protected by claims has used Brookfield viscometer (available from Brookfield Engineering Laboratories(Middleboro; Massachusetts; USA)) measure with about 200 Pascals' (perhaps more general between 190 and 210 Pascals) shear stress; described measurement operating speed in about 25 ℃ water leg be about 10rpm(or more general for example and unrestrictedly between 1 and 30rpm between, especially all the more so for frozen liquid) spindle SC4-27 carry out.
For example and unrestrictedly can use one or more thickeners (as viscosity modifier): clay such as HECTABRITE DP, POLARGEL NF, organo-clay; Carbohydrate and polysaccharide such as guar gum, xanthans; Cellulose and modified cellulose such as CMC, methylcellulose, methoxyl group cellulose, carboxymethyl cellulose, hydroxyethylcellulose and hydroxypropyl cellulose, cellulose ether, cellulosic ether, chitosan; Polymer such as acrylate and (methyl) acrylate polymer and copolymer, diethylene glycol (DEG), propylene glycol, pyrogenic silica (for example Cabosil), SiO 2 powder and modified urea as
Figure BDA00002875136500401
420(is available from BYK Chemie GmbH); And their mixture.Can use other viscosity modifiers and add particle with control viscosity, such as people such as Lewis, public announcement of a patent application US 2003/0091647 is described.Can utilize following other viscosity modifiers that relate to dielectric ink, but they not preferred yet.
Referring to diode printing ink example 6, the suspension of diode (100 – 100J) also can comprise the adhesive viscosities conditioning agent,, has any above-mentioned viscosity modifier of additional adhesion characteristics that is.This type of adhesive viscosities conditioning agent adheres to the first conductor (for example 310A) with diode (100 – 100J) make (for example printing) at equipment (300,300A, 300B) during, and also is provided for subsequently diode (100 – 100J) is remained on the structure (for example polymer) (when being dried or solidify) of the correct position in the equipment (300,300A, 300B).Although this type of adhesion is provided, this type of viscosity modifier also should have the ability of some wetting removals from the contact of diode (100-100J), for example end 125 and/or 127.This type of is bonding, viscosity and wetting removal characteristic are the reasons that methoxyl group cellulose or hydroxypropyl cellulose resin have used in a plurality of exemplary embodiments.Also can rule of thumb select other suitable viscosity modifiers.
The bells and whistles of viscosity modifier or adhesive viscosities conditioning agent also is useful and in the scope of the present disclosure.At first, this type of viscosity modifier should prevent that the diode (100-100J) that suspends from settling under the selection temperature.Secondly, this type of viscosity modifier should help directed diode (100-100J) and print diode (100-100J) in even mode during equipment (300,300A, 300B) is made.The 3rd, viscosity modifier also should play liner or in other words protect the effect of diode (100-100J) in printing process.
Referring to diode printing ink example 3,4 and 8, the suspension of diode (100-100J) also can comprise the second solvent (example 8) or resolvating agent (example 3) or wetting solvent (example 4), and Multi-instance more describes in detail hereinafter.Select this type of (first or second) solvent as wetting (being equal to solvation) or the agent of rewetting lubricant nature, they be used for to promote the first conductor (310A for example, it can comprise conducting polymer such as the silver China ink, carbon ink, or the mixture of silver China ink and carbon ink) and diode 100 – 100J(pass through substrate 105, through-hole structure (131,133,134), and/or the second dorsal surface metal level 122, shown in Figure 58) between ohmic contact, subsequently after device make during printing and dry diode printing ink, for example the non-polar resin solvent also for example and unrestrictedly comprises one or more dibasic esters.For example, when with the diode ink printing on the first conductor 310 time, wetting or resolvating agent partly dissolves the first conductor 310; Because wetting or resolvating agent dissipates subsequently, the first conductor 310 is underhardening and forming and the contacting of diode (100 – 100J) again.
The liquid of diode (100 – 100J) or the surplus of gel suspension generally are another kind of the 3rd solvents, deionized water for example, and any description of this paper percentage should suppose that the liquid of diode (100 – 100J) or the surplus of gel suspension are this type of the 3rd solvent such as water, and the percentage of all descriptions is all based on weighing scale, rather than measures based on volume or some.It should also be noted that and under typical atmospheric environment, multiple diode printing ink suspension all to be mixed, need not that any specific air forms or other comprise or filter environment.
Also can be based on the solvent polarity selective solvent.In one exemplary embodiment, can select the first solvent such as alcohol as polarity or hydrophilic solvent, thereby be conducive to during equipment 300,300A, 300B are made to diode (100 – 100J) and other conductors (for example, 310) wetting removal, the while can be dissolved in by way of parenthesis in the viscosity modifier or make its solubilising.
Another useful properties of exemplary diode printing ink is illustrated by example 7.For this exemplary embodiment, when wetting during printing, diode printing ink is opaque, thereby helps multiple printing process such as chromatography.Yet when being dried or solidify, diode printing ink dry or that solidify is substantial transparent selecting under the wavelength, for example is clear to the emission that basically allows or do not disturb the visible light of diode (100-100J) generation.
Characterize the another kind of method of exemplary diode printing ink based on the size of diode (100-100J), shown in example 7, wherein any size of diode 100-100J is generally less than about 450 microns, and more specifically any size is less than about 200 microns, and more specifically any size is less than about 100 microns, and more specifically any size less than 50 microns.In the exemplary embodiment that illustrates, the width of diode 100-100J generally is approximately 15 to 40 microns, perhaps more specifically width is about 20 to 30 microns, and highly be about 10 to 15 microns, perhaps diameter is about 25 to 28 microns (measure the side to face but not summit to the limit) and highly be 10 to 15 microns.In the exemplary embodiment, do not comprise the metal level 120B that forms projection or raised structures diode 100 – 100J height (namely, the height that comprises the side 121 of GaN heterostructure) is about 5 to 15 microns, perhaps more specifically 7 to 12 microns, perhaps more specifically 8 to 11 microns, perhaps more specifically 9 to 10 microns, perhaps more specifically less than 10 to 30 microns, and the height that forms the metal level 120B of projection or raised structures generally is approximately 3 to 7 microns.
Diode printing ink also can be characterised in that its electrical characteristics, shown in example 10.In this exemplary embodiment, diode (100 – 100J) is suspended at least a basically uninsulated carrier or the solvent, and is opposite with for example insulating binder.
Diode printing ink also can be characterised in that its surface characteristic, shown in example 10.In this exemplary embodiment, diode printing ink has wetting removal or greater than 25 degree or greater than the contact angles of 40 degree, this depends on the surface energy for the substrate of measuring, for example between 34 and 38 dyne.
Diode printing ink example 12:
A kind of composition comprises:
A plurality of diode 100 – 100J;
The first solvent, it comprises about normal propyl alcohol of 5% to 50%, terpineol or diethylene glycol (DEG), ethanol, tetrahydrofurfuryl alcohol and/or cyclohexanol or their mixture;
Viscosity modifier, it comprises about 0.75% to 5.0% methoxyl group cellulose or hydroxypropyl cellulose resin or their mixture;
The second solvent (or the agent of rewetting lubricant nature), it comprises about 0.5% to 10% non-polar resin solvent such as dibasic ester; With
The surplus that comprises the 3rd solvent such as water.
Diode printing ink example 13:
A kind of composition comprises:
A plurality of diode 100-100J;
The first solvent, it comprises about normal propyl alcohol of 15% to 40%, terpineol or diethylene glycol (DEG), ethanol, tetrahydrofurfuryl alcohol and/or cyclohexanol or their mixture;
Viscosity modifier, it comprises about 1.25% to 2.5% methoxyl group cellulose or hydroxypropyl cellulose resin or their mixture;
The second solvent (or the agent of rewetting lubricant nature), it comprises about 0.5% to 10% non-polar resin solvent such as dibasic ester; With
The surplus that comprises the 3rd solvent such as water.
Diode printing ink example 14:
A kind of composition comprises:
A plurality of diode 100 – 100J;
The first solvent, it comprises about normal propyl alcohol of 17.5% to 22.5%, terpineol or diethylene glycol (DEG), ethanol, tetrahydrofurfuryl alcohol and/or cyclohexanol or their mixture;
Viscosity modifier, it comprises about 1.5% to 2.25% methoxyl group cellulose or hydroxypropyl cellulose resin or their mixture;
The second solvent (or the agent of rewetting lubricant nature), it comprises at least a dibasic ester between about 0.0% to 6.0%; With
Basically between about 5,000cps is to about 20, between the 000cps under 25 ℃ for the surplus that comprises the 3rd solvent such as water, the viscosity of wherein said composition.
Diode printing ink example 15:
A kind of composition comprises:
A plurality of diode 100 – 100J;
The first solvent, it comprises about normal propyl alcohol of 20% to 40%, terpineol or diethylene glycol (DEG), ethanol, tetrahydrofurfuryl alcohol and/or cyclohexanol or their mixture;
Viscosity modifier, it comprises about 1.25% to 1.75% methoxyl group cellulose or hydroxypropyl cellulose resin or their mixture;
The second solvent (or the agent of rewetting lubricant nature), it comprises at least a dibasic ester between about 0% to 6.0%; With
Basically between about 1,000cps is to about 5, between the 000cps under 25 ℃ for the surplus that comprises the 3rd solvent such as water, the viscosity of wherein said composition.
Referring to diode printing ink example 12,13,14 and 15, in one exemplary embodiment, another kind of alcohol is as the first solvent, and normal propyl alcohol (" NPA ") (and/or terpineol, diethylene glycol (DEG), tetrahydrofurfuryl alcohol or cyclohexanol) replaces whole or most of IPA basically.General or the major part of diode 100-100J is deposited in container bottom, remove IPA, add NPA, at room temperature stir or the mixture of hybrid IP A, NPA and diode 100-100J, again make subsequently diode 100-100J be deposited in container bottom, and remove the mixture of a part of IPA and NPA, and add the about 120 – 140mL of more NPA().This adding NPA also removes IPA and the method for the mixture of NPA is general repeats twice, produce mainly is NPA, diode 100 – 100J, trace or the mixture of IPA in a small amount in other words, and have potentially remaining wafer bonding agent and wafer bonding agent solvent 170, its generally also be trace or a small amount of in other words.In one exemplary embodiment, the remnants of reservation or trace IPA be less than about 1%, and more about 0.4%.Equally in one exemplary embodiment, the final percentage of NPA in exemplary diode printing ink is about 5% to 50% according to the printing type of using, perhaps more specifically about 15% to 40%, perhaps more specifically about 17.5% to 22.5%, perhaps more specifically about 25% to about 35%.When terpineol and/or diethylene glycol (DEG) used with NPA or replace NPA, the typical concentration of terpineol was about 0.5% to 2.0%, and the typical concentration of diethylene glycol (DEG) is about 15% to 25%.IPA, NPA, the agent of rewetting lubricant nature, deionized water (with other compounds and the mixture that are used to form exemplary diode printing ink) also can be filtered to about 25 microns or less of particle contaminant removal, and described pollutant is greater than diode 100 – 100J or identical with the yardstick of diode 100 – 100J.
Then add and simply mix or stir basically mixture and the viscosity modifier of NPA and diode 100 – 100J, for example methoxyl group celluosic resin or hydroxypropyl cellulose resin.In one exemplary embodiment, can utilize the Company(www.dow.com available from The Dow Chemical) and Hercules Chemical Company, Inc.(www.herchem.com) E-3 and E-10 methoxyl group celluosic resin, the final percentage that produces in exemplary diode printing ink is about 0.75% to 5.0%, more specifically about 1.25% to 2.5%, more specifically 1.5% to 2.0%, and even more specifically be less than or equal to 1.75%.In one exemplary embodiment, utilize the preparation of about 3.0%E-10 and dilute to be created in the final percentage of finishing in the composition with the water of deionization and filtration.Can be equal to and utilize other viscosity modifiers, comprise discussed above those and hereinafter discuss those, they are called dielectric ink.Viscosity modifier provides enough viscosity for diode 100-100J, and they remain essentially in the suspension and not sedimentation goes out liquid or gel suspension, and is especially all the more so under refrigerated condition.
As mentioned above, add subsequently the second solvent (or first solvent of example 3 and 4), it generally is non-polar resin solvent such as one or more dibasic esters.In one exemplary embodiment, the mixture that utilizes two kinds of dibasic esters is to reach about 0.0% to about 10% final percentage, perhaps more specifically about 0.5% to about 6.0%, perhaps more specifically about 1.0% to about 5.0%, perhaps more specifically about 2.0% to about 4.0%, perhaps about 2.5% to about 3.5% final percentage more specifically, for example dimethyl glutarate or for example the mixture of about 2/3rds (2/3) dimethyl glutarates and about 1/3rd (1/3) dimethyl succinate esters have about 3.73% final percentage, for example, use respectively available from InvistaUSA(Wilmington, Delaware, USA) DBE-5 or DBE-9, they also have trace or in a small amount impurity according to appointment 0.2% dimethyl adipate ester and 0.04% water in other words).Also add the 3rd solvent such as deionized water regulating relative percentage and to reduce viscosity, this can be essential or desired.Except dibasic ester, other second solvents that can be equal to utilization also for example and unrestrictedly comprise water; Alcohol (comprises 1-propyl alcohol, 2-propyl alcohol (isopropyl alcohol), isobutanol, butanols (comprising n-butyl alcohol, 2-butanols), amylalcohol (comprising 1-amylalcohol, 2-amylalcohol, 3-amylalcohol), octanol, tetrahydrofurfuryl alcohol, cyclohexanol such as methyl alcohol, ethanol, normal propyl alcohol; Ether such as ethyl methyl ether, ether, ethylene-propylene ether and polyethers; Ester such as ethyl acetate, dimethyl adipate ester, propylene glycol methyl ether acetate (with aforesaid dimethyl glutarate and dimethyl succinate ester); Glycol such as ethylene glycol, diethylene glycol (DEG), polyethylene glycol, propylene glycol, glycol ether, glycol ether acetate; Carbonate such as propylene carbonate; Glycerine, acetonitrile, oxolane (THF), dimethyl formamide (DMF), N-METHYLFORMAMIDE (NMF), dimethyl sulfoxide (DMSO) (DMSO); And their mixture.In one exemplary embodiment, the first quantity of solvent to the mol ratio of the second quantity of solvent at least about 2 to 1 scope, and more specifically at least about 5 to 1 scope, and more specifically at least about 12 to 1 or higher scope in; In other cases, the degree of functionality of two kinds of solvents single dose be can be combined into, a kind of polar solvent or non-polar solven utilized in one exemplary embodiment.Except dibasic ester mentioned above, also exemplary dissolving as described below, wetting or resolvating agent for example and unrestrictedly comprise propylene glycol methyl ether acetate (C 6H 12O 3) (being sold with trade name " PM Acetate " by Eastman), its with 1-propyl alcohol (or isopropyl alcohol) approximately the mol ratio of 1:8 (or by weight 22:78) use to form suspension media and multiple dibasic ester, and their mixture, for example dimethyl succinate ester, dimethyl adipate ester and dimethyl glutarate (they use with multiple form of mixtures, with ProductName DBE, DBE-2, DBE-3, DBE-4, DBE-5, DBE-6, DBE-9 and DBE-IB available from Invista).In one exemplary embodiment, utilized DBE-9.The mol ratio of solvent will change based on selective solvent, and 1:8 and 1:12 are typical ratios.
Although general multiple diode printing ink mixes with above-mentioned order, what should also be pointed out that is, multiple the first solvent, viscosity modifier, the second solvent and the 3rd solvent (for example water) can other order add or mix, and any order or institute's orderliness are all in the scope of the present disclosure.For example, can at first add deionized water (as the 3rd solvent), add subsequently 1-propyl alcohol and DBE-9, then add viscosity modifier, and add additional water subsequently, it also can for example be that adjusting relative percentage and viscosity are required.
Then mix or stir the mixture of the first solvent basically such as NPA, diode 100 – 100J, viscosity modifier, the second solvent and the 3rd solvent such as water, for example use impeller-agitator to mix with lower speed or stir avoiding air is sneaked in the mixture, at room temperature in air atmosphere, carried out about 25 – 30 minutes.In one exemplary embodiment, the volume of gained diode printing ink is typically about 1/2nd to one liters (each wafer), it comprises 1,000,000 diodes of 9-10,100 – 100J, and the concentration of diode 100 – 100J can be heightened or turn down as required, for example depend on that the LED of following selection printing or the expectation concentration of photovoltaic device regulates, have above-mentioned exemplary range of viscosities for dissimilar printings and dissimilar diode 100 – 100J.The first solvent such as NPA also are tending towards playing the effect of anticorrisive agent and anti-bacteria and conk and get diode printing ink with repository.In the time will utilizing other first solvents, also can add other anticorrosion, inhibition or fungicide.For an exemplary embodiment, can utilize for the additional surfactant of printing or defoamer as alternative, but be unwanted for normal function and exemplary printing.
Figure 53 is the flow chart that illustrates for the manufacture of the illustrative methods embodiment of diode printing ink, and useful general introduction is provided.Described method starts from initial step 200, discharges diode 100 – 100J, step 205 from wafer 150,150A.As mentioned above, this step relates to the wafer on first diode side is connected on the wafer holder with the wafer bonding adhesive, the second dorsal surface that uses laser lift-off or polishing and/or polished wafer to be exposing listization groove, and dissolves the wafer bonding adhesive to be discharged into diode 100 – 100J among solvent such as the IPA or to be discharged among another kind of solvent such as the NPA.When utilizing IPA, described method comprises optional step 210, and diode 100-100J is transferred among (first) solvent such as the NPA.Described method adds the diode 100-100J in the first solvent in viscosity modifier such as the methylcellulose subsequently, step 215, and add one or more the second solvents, for example one or both dibasic esters such as dimethyl glutarate and/or dimethyl succinate ester, step 220.Can use the 3rd solvent such as deionized water to regulate any percentage by weight, step 225.In step 230, described method is subsequently in air atmosphere, mixed a plurality of diode 100-100J, the first solvent, viscosity modifier, the second solvent and any additional deionized water about 25-30 minute in that room temperature (about 25 ℃) is lower, gained viscosity is between about 1,000cps is to about 25, between the 000cps.Then finish described method, return step 235.It should also be noted that step 215,220 and 225 can occur by other order as mentioned above, and can carry out as required repetition, and can utilize optional, additional blend step.
Figure 54 is the perspective view of example devices 300 embodiment.Figure 55 shows the top view of exemplary electrical electrode structure of the first conductive layer of example devices embodiment.Figure 56 is the first profile (by the 30-30 ' plane of Figure 54) of example devices 300 embodiment.Figure 57 is the second profile (by the 31-31 ' plane of Figure 54) of example devices embodiment.Figure 58 is the second profile that is coupled to exemplary diode 100J, 100I, 100D and the 100E of the first conductor 310A.Figure 62 is the luminous photo of energization example devices 300A embodiment.As mentioned above, equipment 300 is by forming in pedestal 305 depositions (for example printing) multilayer, namely, at one or more the first conductors 310 of pedestal 305 depositions, it is layer or a plurality of conductor 310, subsequently when time deposition diode 100 – 100J(in liquid or gel suspension to wet-film thickness be about 18 microns or larger), and evaporate or in other words make the gel section dispersion of liquid/suspension, diode 100 – 100J physically with on the electricity are coupled to one or more the first conductor 310A with the first orientation (direction upwards) or the second orientation (direction is downward).At first, orientation or direction upwards, shown in Figure 58, the metal level 120B that forms projection or raised structures upwards is orientated, and diode 100 – 100J are by the second terminal 127(dorsal surface metal level 122) be coupled to one or more the first conductor 310A, shown in diode 100J figure, perhaps by peripheral path 133 couplings, shown in diode 100I figure, perhaps by central corridor 131 couplings, shown in diode 100D figure, (be presented as the optional dorsal surface metal level 122 of diode-less 100J), perhaps do not illustrate in addition by periphery path 134() coupling, perhaps by substrate 105 couplings, shown in diode 100E figure.Secondly, downward orientation or direction, the metal level 120B that forms projection or raised structures is orientated downwards, and diode 100 – 100J for example form the metal level 120B of projection or raised structures by the first terminal 125() be coupled to and maybe can be coupled to one or more the first conductor 310A.
Diode 100-100J deposits with effective random orientation, and the first orientation can make progress (first terminal 125 make progress and substrate 105 downward), this is the direction of forward bias (depend on and execute alive polarity) normally, perhaps the second orientation can be downwards (first terminal 125 downwards and substrate 105 make progress), this is the direction of reverse biased (also depend on and execute alive polarity) normally, and perhaps the 3rd orientation can be side direction (diode side 121 downwards and another diode side 121 upwards).The viscosity of fluid dynamics, diode printing ink, order number, print speed printing speed, as if the first conductor 310 is interdigital or the orientation (pointed tooth is perpendicular to the direction of pedestal 305 motions) of the pointed tooth of pectinate texture, the size of diode side 121 affect an orientation to the advantage of another orientation.Significantly reduce the percentage of the diode 100 – 100J with the 3rd orientation when for example, diode side 121 height are less than about 10 microns.Similarly, as if fluid dynamics, higher viscosity and lower order number make the first generality that is orientated increase, and cause diode 100 – 100J the first orientation to reach 80% or higher.Should be noted that, even the diode 100 – 100J with remarkable high percentage are coupled to the first conductor 310A with the first orientation that makes progress or direction, at least one or a plurality of diode 100 – 100J will have the second downward orientation or direction on the statistics, and statistically the first orientation or the second orientation of diode 100 – 100J also will Random assignments on the first conductor 310A.In other words, depend on and execute alive polarity, maybe will be coupled to the first conductor 310A although the diode 100 – 100J of remarkable high percentage are coupled to the first forward deflection orientation or direction, statistically at least one or a plurality of diode 100 – 100J will have the second skew deviation orientation or direction.In described event, luminous or absorption region 140 orientations are different, yet person of skill in the art will appreciate that and also depend on and execute alive polarity, and the first orientation will be for skew deviation be orientated, and the second orientation will be forward deflection orientation.(this has significantly deviated from existing device structure, and wherein all these type of diodes (for example LED) have single-orientated with respect to Voltage rails, that is, all make their corresponding anodes be coupled to high voltage and make their negative electrode be coupled to low voltage.) as the result of random orientation, and depend on different diode characteristics such as the tolerance to skew deviation, can use AC or dc voltage or electric current to diode 100 – 100J energizations.
It is also noted that the single diode of all in manufacturing equipment (100-100J) is connected in parallel to each other in electricity.This has also significantly deviated from existing device structure, and wherein at least some diodes are one another in series, and then being connected in series of these type of a plurality of diodes can be connected in parallel to each other).
Referring to Figure 55, utilize a plurality of the first conductors 310, form the electrode structure of at least two separation, be expressed as the interdigital or comb-shape electrode structure of the first (the first) conductor 310A and the second (the first) conductor 310B.Shown in Figure 55, conductor 310A has identical width with 310B, and has different in width shown in Figure 54 and 56, and all these type of modification are in the scope of the present disclosure.For this exemplary embodiment, diode printing ink or suspension (having diode 100-100J) are deposited on the conductor 310A.Subsequently that the second transparent conductor 320(is as described below) deposition (on dielectric layer, as described below) with the preparation with conductor 310B separate electrically contact, shown in Figure 56.
Should be pointed out that the second conductor 320 can use the first conductor 310B energization when the first conductor 310 has interdigital or pectinate texture shown in Figure 55.Interdigital or the pectinate texture of the first conductor provides current balance type, so that by the first conductor 310A, diode 100 – 100J, the second conductor 320, and each current path of the first conductor 310B is basically in preset range.This is used for the distance that minimum current must flow through the second transparent conductor, thereby reduces resistance and heat production, and generally provides electric current to the whole or most of diodes 100 – 100J in the scheduled current horizontal extent.In addition, the also available electric wire series connection of a plurality of interdigital or pectinate texture of the first conductor 310, for example for generation of the overall apparatus voltage of a plurality of diodes 100 – 100J forward voltages with expectation, typical household voltage at the most for example and unrestrictedly.
Then one or more dielectric layers 315 are deposited on the diode 100 – 100J, its depositional mode is to stay in diode 100 – 100J second dorsal surface of first terminal the 125 or second orientation of the first orientation of exposure one or two, presenting in an amount at least sufficient to be provided at one or more the first conductor 310(is coupled on the diode 100 – 100J) and the second transparent conductor 320 between electric insulation, described conductor deposition is on one or more dielectric layers 315 and depend on described orientation, forms and first terminal 125 or the corresponding physical contact of the second dorsal surface of diode 100 – 100J and electrically contacting.Then can deposit optional luminous (or emission) layer 325, be that any lens disperse or sealant 330 subsequently.For example, luminous (or emission) layer 325 of examples of such optional can comprise that the Stokes shift phosphor powder layer is to produce lamp or other equipment of emission desired color or other chosen wavelength ranges or wave spectrum.The compound of these different layers, conductor and other depositions more discusses in detail hereinafter.
Pedestal 305 can be formed or comprised any suitable material by any suitable material, for example and unrestrictedly such as plastics, paper wood, cardboard or coating Paper or cardboard.Pedestal 305 can comprise any flexible material with the intensity that stands the desired use condition.In one exemplary embodiment, pedestal 305 comprises polyester or plastic plate, for example treated CT-7 seven mil polyester sheet materials for accepting printing, it can be from for example MacDermid, the MacDermid Autotype of Inc., Inc.(Denver, Colorado, USA) commercially available.In another exemplary embodiment, pedestal 305 comprises polyimide film such as Kapton, and it also for example can be from DuPont, Inc.(Wilmington, Delaware, USA) commercially available.Equally in one exemplary embodiment, pedestal 305 comprises the material with dielectric constant, and described dielectric constant can or be suitable for providing enough electric insulations to selectable excitation voltage.Pedestal 305 for example also can comprise following any one or a plurality of: other paper woods or the wood based product of paper wood, coated paper, poly-paper, wood fiber paper, cardboard, poster paper, poster plate, book, magazine, newspaper, plank, glued board and any selection form; The plastics of any selection form or polymeric material (sheet material, film, plate etc.); Natural or tartan and the product of any selection form; Natural and the synthetic textiles of any selection form; Material and the product in the glass of any selection form, pottery and other silicon or silicon dioxide source; Concrete (curing), stone material and other construction materials and product; Perhaps any other product of existing or following manufacturing.In the first exemplary embodiment, can select to provide the pedestal 305(of electric insulation to a certain degree namely, have dielectric constant or insulation characterisitic, be enough to provide deposition or be applied in the electric insulation of one or more the first conductors 310 on first (front) side of pedestal 305, be used for each other electric insulation or with the electric insulation of other equipment or system component.For example, although be relatively more expensive selection, glass plate or silicon chip also can be used as pedestal 305.Yet in other exemplary embodiments, plastic plate or plastic coating paper product are used to form pedestal 305, for example polyester and the 100lb. cover paper of mentioned above or patent database, it is available from Sappi, Ltd., perhaps available from other paper wood manufacturers such as Mitsubishi Paper Mills(Mead) similar coated paper, and other paper products.In another exemplary embodiment, utilize also available from Sappi, the embossed plastic plate with a plurality of grooves or the plastic coating paper product of Ltd., and described groove is used to form conductor 310.In additional exemplary embodiment, can utilize the pedestal 305 of any type, unrestrictedly comprise those (for example plastics, lacquer and ethene) with additional sealing or encapsulated layer, they are deposited on one or more surfaces of pedestal 305.Suitable pedestal 305 comprises that also the polyenoid of extruding belongs to film, comprises the LDPE film; The supatex fabric of polymerization comprises combing, melts and sprays and spunbond supatex fabric, and the cellulose paper wood, comprises tissue class paper.Pedestal 305 also can comprise the laminated sheet of any previous materials.Two or more laminated sheets can be by adhesive bond, hot adhesion or autogenous bonding to the laminated sheet that comprises together substrate with formation.If necessary, but the embossed layers pressing plate.
In one embodiment, suppose that diode caloric value of the present invention is low, the extensive material that can be used as pedestal comprises that those have the material of relatively low suddenly temperature.These temperature can comprise and are equal to or higher than 50 ℃ or be equal to or higher than 75 ℃ or 100 ℃ or 125 ℃ or 150 ℃ or 200 ℃ or 300 ℃.ISO 871:2006 has specified and has used hot-air furnace to measure the suddenly temperature of plastics and the laboratory method of autoignition temperature.
Shown in several figure, it is smooth form factor at common sensation basically that exemplary base 305 has, for example comprise a slice selection material (for example paper wood or plastics), it can be for example and unrestrictedly by the printing machine charging, and it can have the pattern on first surface (or face), described surface (or face) comprises surface roughness, chamber, groove or ditch, perhaps has in predetermined tolerance basically level and smooth first surface (and not comprising chamber, groove or ditch).Person of skill in the art will appreciate that countless additional shape and surface topography are available, that they are considered to be equal to and in the scope of the present disclosure.
Then for example use or deposit one or more the first conductor 310(by printing process at the first side or the first surface of pedestal 305), its thickness depends on the type of electrically conductive ink or polymer, for example to about 0.1 to 6 micron (for example typical silver China ink is about 3 microns, and the Nano Silver China ink is less than 1 micron).In other exemplary embodiments, depend on the thickness of using, the first conductor 310 also available sand papering so that surface smoothing and also can be by press polish with compression conductive particle such as silver.In an illustrative methods making example devices 300, with electrically conductive ink, polymer, or other conducting liquids or gel (for example silver (Ag) China ink or polymer, the Nano Silver ink composition, carbon nanotube ink or polymer, or silver/carbon mix is as being dispersed in the amorphous nano-sized carbon (have size and be the particle between about 75 – 100nm) in the silver-colored China ink) be deposited on the pedestal 305, for example deposit by printing or other deposition processs, and can be cured subsequently or partly solidified (for example by ultraviolet (uv) curing), thereby form one or more the first conductors 310.In another exemplary embodiment, one or more the first conductors 310 can be by spraying, revolve casting (or spin coating), vapour deposition or plated conductive compound or element such as metal (for example aluminium, copper, silver, gold, nickel) and form.Also can utilize one or more composite material first conductors 310 of combination producing of dissimilar conductors and/or conductive mixture or material (such as printing ink, polymer, metal element etc.).Multilayer capable of being combined and/or polytype metal or other electric conducting materials for example and unrestrictedly for example are included in the first conductor 310 of the golden plate on the nickel to form one or more the first conductors 310.For example, also can utilize aluminium or the silver of vapour deposition, or the carbon-Yin Mo that mixes.In a plurality of exemplary embodiments, deposit a plurality of the first conductors 310, and in other embodiments, can deposit the first conductor 310 and form the monolithic conductive sheet or in other words be connected (for example a slice aluminium is coupled to pedestal 305) (not illustrating separately).Also in a plurality of embodiment, it is not curable or only can be partly solidified before a plurality of diode 100-100J of deposition to can be used for forming the electrically conductive ink of one or more the first conductors 310 or polymer, when a plurality of diode 100-100J of contact, all solidify subsequently, for example be used to form the ohmic contact with a plurality of diode 100-100J.In one exemplary embodiment, one or more the first conductors 310 all solidified before a plurality of diode 100-100J of deposition, and other diode printing ink compounds provide some dissolvings of one or more the first conductors 310, and it contacts subsequently a plurality of diode 100-100J and again solidifies.
Other electrically conductive inks or material also can be used for forming one or more the first conductors 310, one or more the second conductors 320, the 3rd conductor (not illustrating separately), with following any other conductor copper for example, tin, aluminium, gold, noble metal, carbon, carbon black, carbon nano-tube (" CNT "), the CNT of solid wall or double wall or compound wall, Graphene, the Graphene microplate, the nano-graphene microplate, the composition of nano-sized carbon and nano-sized carbon and silver, has Nano Silver composition good or acceptable light transmission, perhaps other organic or inorganic conducting polymers, printing ink, gel or other liquid or semisolid material.In one exemplary embodiment, with carbon black (particle diameter with about 100nm) be added in the silver-colored China ink to the gained concentration of carbon in about scope of 0.025% to 0.1%, thereby strengthen ohmic contact and adhesion between diode 100 – 100J and the first conductor 310.In addition, can be equal to and utilize any other printable conductive materials that maybe can apply to form one or more the first conductors 310, one or more the second conductor 320 and/or the 3rd conductor, and exemplary conductive compound comprises: (1) is from Conductive Compounds(Londonberry, NH, USA), AG-500, AG-800 and AG-510 silver electrically conductive ink, it also can comprise the ultraviolet solidifiable dielectric of additional coating UV-1006S (for example part of first dielectric layer 125); (2) from DuPont, 7102 carbon conductors (if chromatography 5000Ag), 7105 carbon conductors, 5000 silver conductors, 7144 carbon conductors (having the UV encapsulating material), 7152 carbon conductors (having 7165 encapsulating materials) and 9145 silver conductors; (3) from SunPoly, Inc., 128A silver electrically conductive ink, 129A silver and carbonaceous conductive printing ink, 140A electrically conductive ink and 150A silver electrically conductive ink; (4) from Dow Corning, Inc., the high conductive silver ink of PI-2000 series; (5) from Henkel/Emerson﹠amp; Cumings, Electrodag 725A; (6) Monarch M120 is available from Cabot Corporation(Boston, Massachusetts, USA), as carbon additive, for example be used for the silver China ink to form the mixture of carbon ink and Yin Mo.As described below, these compounds also can be used for forming other conductors, comprise one or more the second conductors 320 and are connected conductive trace or connection.In addition, electrically conductive ink and compound can be available from multiple other sources.
Basically the conducting polymer of printing opacity also can be used for forming one or more the first conductors 310, also can be used for forming one or more the second conductors 320 and/or the 3rd conductor.For example, except the equivalent of any other following printing opacity conductor and they, also can utilize polyethylene-dioxy thiophene, for example can trade name " Orgacon " from AGFA Corp.(Ridgefield Park, New Jersey, USA) commercially available polyethylene-dioxy thiophene.Other conducting polymers that can unrestrictedly be equal to utilization comprise that for example polyaniline is coughed up polymer with poly-giving a tongue-lashing.In another exemplary embodiment, utilize the carbon nano-tube that has been suspended or be dispersed in polymerisable ionic liquid or other fluids to form a plurality of conductors, they are printing opacity or transparent basically, for example one or more the second conductors 320.
Organic semiconductor, multiple pi-conjugated polymer, conducting polymer or the synthetic metal of being called are semiconductive in essence, and this is because pi-conjugated along between the carbon atom of main polymer chain.Their structure comprises the organic main chain of one dimension, and it is so that can conduct electricity after n-or the doping of p-type.Comprise poly-(acetylene), poly-(pyrroles), poly-(thiophene), polyaniline, polythiophene, poly-(to phenylene sulfoether), poly-(to the styrene support) (PPV) and PPV derivative, poly-(3-alkylthrophene), poly-indoles, poly-pyrene, polycarbazole, poly-Azulene, poly-azepine, poly-(fluorenes) and poly-naphthalene through the organic conductive polymer classes of fully research.Other examples comprise polyaniline, polyaniline derivative, polythiophene, polythiofuran derivative, poly-giving a tongue-lashing coughed up, poly-giving a tongue-lashing coughed up derivative, the polyphenyl bithiophene, the polyphenyl thiophthene derivative, polyparaphenylene, the poly radical derivative, polyacetylene, Polyacetylene Derivatives, polydiacetylene, the polydiacetylene derivative, poly-to the benzene ethylene, poly-to benzene ethylene derivative, poly-naphthalene, with poly-naphthalene derivatives, polyisothianaphthene (PITN), (wherein heteroaryl can be for example thiophene in poly-heteroaryl ethylene support (ParV), furans or pyrroles, polyphenylene-sulfide (PPS)) poly-all naphthalenes (PPN), poly-phthalocyanine (PPhc) etc., with their derivative, their copolymer, and their mixture.As used herein, the term derivative refers to the polymer that formed by the monomer that replaces with side chain or group.
The method that is used for the polymerization conducting polymer is not particularly limited, and available method for example and unrestrictedly comprises uv or other electromagnetism polymerizations, thermal polymerization, electrolytic oxidation polymerization, chemical oxidising polymerisation and catalytic polymerization.The polymer that obtains by polymerization normally neutral and until be only conduction when mixing.Therefore, described polymer process p-doping or n-mix and are converted to conducting polymer.Semi-conducting polymer can carry out chemical doping or electrochemical doping.The material that is used for mixing is not particularly limited; In general, the use material lewis acid for example that can accept duplet.Example comprises hydrochloric acid, sulfuric acid, organic sulfonic acid derivative such as p-sulfonic acid, polystyrolsulfon acid, alkyl benzene sulphonate, camphorsulfonic acid, alkyl sulfonic acid, salicyl sulfonic acid etc., iron chloride, copper chloride and ferric sulfate.
Should be pointed out that for " oppositely " manufacturing equipment 300 pedestal 305 and one or more the first conductor 310 are selected to printing opacity, make light enter and/or penetrate by the second side of pedestal 305.In addition, when one or more the second conductors 320 when also being transparent, light can be penetrated or absorbed by them by two side of equipment 300.
Can be one or more the first conductors 310 different textures is provided, for example has smoother surface, perhaps on the contrary, the surface of coarse or thorniness, perhaps the structure of the micro-embossed of through engineering approaches is (for example available from Sappi, Ltd.), thus improve potentially the adhesiveness of other layers (for example dielectric layer 315 and/or be used for to promote form the ohmic contact with diode 100-100J subsequently.Also can give one or more the first conductor 310 corona treatment before deposition diode 100 – 100J, this can be tending towards removing any oxide that may form, and also is conducive to form subsequently the ohmic contact with a plurality of diode 100 – 100J.Technical staff at electronics or print field will recognize that countless modification is arranged in the mode that can form therein one or more the first conductors 310, and think all these type of modification be equal to and in the scope of the present disclosure.For example, also can unrestrictedly deposit one or more the first conductors 310 by spraying or vapour deposition.In addition, for other a plurality of embodiment, can for example by coating, printing, spraying or vapour deposition one or more the first conductors 310 be deposited as single layer or pantostrat.
Therefore, as used herein, " deposition " comprises any and whole printing known in the art, coating, rolling, spraying, stratification, spraying, electroplates, revolves casting (or spin coating), vapour deposition, lamination, fixing and/or other deposition processs, and no matter they are that what to impact also is non-impact." printing " comprises any and whole printing known in the art, coating, rolling, spraying, stratification, spin coating, lamination and/or fixing means, no matter they are that what to impact also is non-impact, and for example and unrestrictedly specifically comprise silk screen printing, ink jet printing, electro-optical printing, e-inks printing, photoresist and other printings against corrosion, hot stamping brush, laser spraying printing, magnetic printing, bat printing, flexographic printing, mixing hectograph lithographic printing, intaglio printing and other intaglio printings.Think that all these class methods are deposition processs of this paper and can be utilized.Exemplary deposition or printing process do not need significant production control or restriction.Do not need specific temperature or pressure.Some clean rooms or filtered air may be useful, but potentially in the level consistent with the standard of known printing or other deposition processs.Yet for consistency, for example for the proper alignment (chromatography) of a plurality of deposit successive layers of forming a plurality of embodiment, stationary temperature (a possible exception being arranged, as described below) and humidity can be desired relatively.In addition, the multiple compounds of utilization can be included in different polymer, adhesive or other dispersants, and they can be by hot curing or drying, air-dry or IR or uv solidify under environmental condition.
What should also be pointed out that is, general any application for this paper multiple compounds, for example pass through the application of printing or other depositions, but also control surface characteristic or surface energy, for example by using etch-resistant coating or controlling by " wettability " that change this type of surface, for example control the surface of described surface such as pedestal 305 surfaces, a plurality of the first conductor or the second conductor (being respectively 310,320) and/or the surface of diode 100-100J by hydrophily, hydrophobicity or electricity (positive charge or the negative electrical charge) characteristic that changes the surface.Be combined with characteristic such as the surface tension of compound, suspension, polymer or printing ink to be deposited, can be so that deposited compound adhere to position expectation or that select, and effectively break away from other zones or surperficial.
For example and unrestrictedly, use any vapo(u)rability or such as water, alcohol, ether etc. of volatility organic or inorganic compound that a plurality of diode 100 – 100J are suspended in liquid, semiliquid or the gel carrier, they also can comprise adhesive component, for example resin, and/or surfactant or other fluid auxiliary agents.In one exemplary embodiment, for example and unrestrictedly, a plurality of diode 100 – 100J of the described suspension of example as mentioned.Also can utilize surfactant or fluid auxiliary agent such as octanol, methyl alcohol, isopropyl alcohol or deionized water, and also can use adhesive such as anisotropic-electroconductive adhesive, it comprises basically or smaller nickel bead (for example 1 micron nickel bead) (for example it conducts electricity in compression with after solidifying and can be used for improving or promote the formation of ohmic contact), perhaps curable adhesive or the polymer of any other uv, heat or air is included in those (and they also can utilize with dielectric compound, lens etc.) of hereinafter more describing in detail.
In addition, can construct a plurality of diode 100 – 100J, for example have any different colours, such as red, green, blue, yellow, amber etc. light-emitting diode.Then the light-emitting diode 100 – 100J that have different colours can mix in exemplary diode printing ink, so that when energization in equipment 300,300A, produce the colour temperature of selecting.
Dry or solidify diode printing ink example 1
A kind of composition comprises:
A plurality of diode 100-100J; With
Resin or polymer curing or polymerization.
Dry or solidify diode printing ink example 2
A kind of composition comprises:
A plurality of diode 100-100J;
Resin or polymer curing or polymerization; With
At least the solvent of trace.
Dry or solidify diode printing ink example 3
A kind of composition comprises:
A plurality of diode 100-100J;
Resin or polymer curing or polymerization;
At least the solvent of trace; With
At least the surfactant of trace.
Then diode printing ink (the diode 100 – 100J of suspension) is deposited on one or more the first conductors 310, for example print by the screen cloth that uses 280 order polyester or PTFE to apply, and the component of volatile or vapo(u)rability dissipates, for example solidify or any drying means, thereby for example make diode 100 – 100J basically or at least in part contact and adhere to one or more the first conductors 310 by heating, uv.In one exemplary embodiment, the diode printing ink of deposition solidified 5 minutes or the shorter time usually in about 110 ℃ of curing.The diode printing ink of remaining drying or curing, as described in the diode printing ink example 1 of dry or curing, generally comprise resin or the polymer (it is generally fixed as mentioned above or keeps diode 100 – 100J in position) of a plurality of diode 100 – 100J and curing or polymerization.Although the component of volatile or vapo(u)rability (for example the first and/or second solvent and/or surfactant) dissipates basically, but remain trace or this component of a small amount of, shown in the diode printing ink example 2 and 3 of dry or curing.As used herein, " trace " composition is interpreted as greater than zero and is less than or equal to 5% the amount that initially is present in the one-tenth component of (when initial deposition is on the first conductor 310 and/or pedestal 305) in the diode printing ink.
The density of gained diode 100 – 100J or concentration represents with the number of every square centimeter of diode 100 – 100J, for example will depend on the concentration of diode 100 – 100J in the diode printing ink in complete equipment 300,300A, 300B and changes.When the size of diode 100 – 100J is in the scope of 30 microns of 20 –, very high density is available, and it still covers the surf zone (one of them allows to have the advantage of larger heat dissipation in the situation that does not need separately heating plate) of only little percentage.For example, when the size of diode 100 – 100J was in the scope of 30 microns of 20 –, 10,000 diodes only covered about 1% surf zone in one square inch.Also for example, in one exemplary embodiment, the diode density range is available and in the scope of the present disclosure widely, unrestrictedly comprises: utilize every square centimeter of 2 to 10,000 diode 100-100J in equipment 300,300A, 300B; Perhaps more specifically, in equipment 300,300A, 300B, utilize every square centimeter of 5 to 10,000 diode 100-100J; Perhaps more specifically, in equipment 300,300A, 300B, utilize every square centimeter of 5 to 1,000 diode 100-100J; Perhaps more specifically, in equipment 300,300A, 300B, utilize every square centimeter of 5 to 100 diode 100-100J; Perhaps more specifically, in equipment 300,300A, 300B, utilize every square centimeter of 5 to 50 diode 100-100J; Perhaps more specifically, in equipment 300,300A, 300B, utilize every square centimeter of 5 to 25 diode 100-100J; Perhaps more specifically, in equipment 300,300A, 300B, utilize 10 to 8,000 every square centimeter diode 100 – 100J; Perhaps more specifically, in equipment 300,300A, 300B, utilize 15 to 5,000 every square centimeter diode 100 – 100J; Perhaps more specifically, in equipment 300,300A, 300B, utilize 20 to 1,000 every square centimeter diode 100 – 100J; Perhaps more specifically, in equipment 300,300A, 300B, utilize 25 to 100 every square centimeter diode 100 – 100J; Perhaps more specifically, in equipment 300,300A, 300B, utilize 25 to 50 every square centimeter diode 100 – 100J.
Also can utilize additional step or multistage method that diode 100 – 100J are deposited on one or more the first conductors 310.Also for example and unrestrictedly, the glycol ether acrylate monomer of deposit binder such as methoxy (it also can comprise water-soluble light trigger such as TPO(oxidation triphosphoric acid phenol) at first) or anisotropic-electroconductive adhesive, deposit subsequently diode 100 – 100J, they are suspended in liquid or the gel as mentioned above.
In one exemplary embodiment, the suspension media of diode 100 – 100J also comprises dissolution solvent or other reactants, one or more dibasic esters for example, and it dissolves or some in wetting one or more the first conductor 310 more at first.When the surface of the deposition suspension of a plurality of diode 100 – 100J and one or more the first conductors 310 is partly dissolved or during non-curing subsequently, a plurality of diode 100 – 100J can slightly or be partially submerged in one or more the first conductors 310, this also helps to form ohmic contact, and forms adhesives or adhesive coupling between a plurality of diode 100 – 100J and one or more the first conductor 310.When dissolving or reactant dissipation, when for example dissipating by evaporation, one or more the first conductors 310 are underhardening (or again solidifying) again, substantially contacts with a plurality of diode 100 – 100J.Except dibasic ester mentioned above, aforesaid exemplary dissolving, wetting or resolvating agent for example and unrestrictedly also comprise propylene glycol methyl ether acetate (C 6H 12O 3) (being sold with trade name " PM Acetate " by Eastman), its with 1-propyl alcohol (or isopropyl alcohol) approximately the mol ratio of 1:8 (or by weight 22:78) use to form suspension media, with multiple dibasic ester, and their mixture, for example dimethyl succinate ester, dimethyl adipate ester and dimethyl glutarate (they use with multiple form of mixtures, with ProductName DBE, DBE-2, DBE-3, DBE-4, DBE-5, DBE-6, DBE-9 and DBE-IB available from Invista).In one exemplary embodiment, utilized DBE-9.The mol ratio of solvent will change based on selective solvent, and 1:8 and 1:12 are typical ratios.Also can utilize multiple compounds or other agent to control this reaction: for example, when a plurality of compounds of diode printing ink have evaporated or in other words dissipate and the thickness of diode printing ink during less than the height of diode 100-100J, the combination of 1-the third alcohol and water or mixture can suppress significantly DBE-9 dissolving or more wetting one or more the first conductor 310 until solidification process stage in evening relatively, so that the material of any dissolving of the first conductor 310 (for example silver-colored inkwood fat and Yin Mo particle) is not deposited on the upper surface of diode 100 – 100J (it can form with one or more the second conductors 320 subsequently and electrically contact).
Dielectric ink example 1:
A kind of composition comprises:
The dielectric resin that comprises about 0.5% to about 30% methylcellulose resin;
The first solvent that comprises alcohol; With
Surfactant.
Dielectric ink example 2:
A kind of composition comprises:
The dielectric resin that comprises about 4% to about 6% methylcellulose resin;
The first solvent that comprises about 0.5% to about 1.5% octanol;
The second solvent that comprises about 3% to about 5% IPA; With
Surfactant.
Dielectric ink example 3:
A kind of composition comprises:
About 10% to about 30% dielectric resin;
The first solvent that comprises glycol ether acetate;
The second solvent that comprises glycol ether; With
The 3rd solvent.
Dielectric ink example 4:
A kind of composition comprises:
About 10% to about 30% dielectric resin;
The first solvent that comprises about ethylene glycol monomethyl ether acetate of 35% to 50%;
The second solvent that comprises about 20% to 35% dipropylene glycol monomethyl ether; With
The 3rd solvent that comprises about toluene of 0.01% to 0.5%.
Dielectric ink example 5:
A kind of composition comprises:
About 15% to about 20% dielectric resin;
The first solvent that comprises about ethylene glycol monomethyl ether acetate of 35% to 50%;
The second solvent that comprises about 20% to 35% dipropylene glycol monomethyl ether; With
The 3rd solvent that comprises about toluene of 0.01% to 0.5%.
Dielectric ink example 6:
A kind of composition comprises:
About 10% to about 30% dielectric resin;
The first solvent that comprises about 50% to 85% dipropylene glycol monomethyl ether; With
The second solvent that comprises about toluene of 0.01% to 0.5%.
Dielectric ink example 7:
A kind of composition comprises:
About 15% to about 20% dielectric resin;
The first solvent that comprises about ethylene glycol monomethyl ether acetate of 50% to 90%; With
The second solvent that comprises about toluene of 0.01% to 0.5%.
Then for example by printing or painting method insulating material (is called dielectric ink, for example at described in dielectric ink example 1 – 7 those) be deposited on the diode 100 – 100J or the periphery of diode 100 – 100J or side direction part with form insulation or dielectric layer 315, deposit subsequently one or more the second conductors 320.As mentioned and hereinafter described, insulation or that dielectric layer 315 can comprise any insulation or dielectric compound, they are suspended in any in the medium.In one exemplary embodiment, insulate or dielectric layer 315 comprises methylcellulose resin, its amount is between about 0.5% to 15%, perhaps more specifically between about 1.0% to about 8.0%, perhaps more specifically between about 3.0% to about 6.0%, perhaps more specifically between about 4.5% to about 5.5%, for example available from the E-3 " methylcellulose " of Dow Chemical; The amount of surfactant is between about 0.1% to 1.5%, perhaps more specifically between about 0.2% to about 1.0%, perhaps more specifically between about 0.4% to about 0.6%, for example available from 0.5% the BYK 381 of BYK Chemie GmbH; Have the first solvent in suspension, it is measured between 0.01% to 0.5%, perhaps more specifically between about 0.05% to about 0.25%, and perhaps more specifically between about 0.08% to about 0.12%, about 0.1% octanol for example; With the second solvent, it is measured between about 0.0% to 8%, perhaps more specifically between about 1.0% to about 7.0%, perhaps more specifically between about 2.0% to about 6.0%, perhaps more specifically between about 3.0% to about 5.0%, about 4% IPA for example, residue is the 3rd solvent such as deionized water.About the E-3 preparation, deposit that four to five coatings insulate with formation or dielectric layer 315, its gross thickness is approximately the 6-10 micron, and each coating was solidified about five minutes at about 110 ℃.In other exemplary embodiments, dielectric layer 315 can be the IR(infrared ray) that solidify, that uv solidifies or the two all use.Also in other exemplary embodiments, different dielectric preparations can be used and do that different layers insulate with formation or dielectric layer 315; For example and unrestrictedly, use the Corporation(Dusseldorf available from Henkel, Germany) the transparent dielectric of ground floor solvent-borne type, for example Henkel BIK-20181-40A, Henkel BIK-20181-40B and/or Henkel BIK-20181-24B use above-mentioned water base E-3 preparation subsequently to form dielectric layer 315.Dielectric layer 315 can be transparent, but also can be for example and unrestrictedly comprise light diffusion, scattering or reflection grain and thermal conducting particle such as aluminium oxide than low concentration.In a plurality of exemplary embodiments, dielectric ink also will be from the upper surface of diode 100 – 100J wetting removal so that at least some (the depending on direction) in first terminal the 125 or second dorsal surface of diode 100 – 100J be exposed to contact with one or more the second conductors 320 subsequently.
Exemplary one or more solvents that can be used for exemplary dielectric ink for example and unrestrictedly are: water; Alcohol as methyl alcohol, ethanol, normal propyl alcohol (comprising 1-propyl alcohol, 2-propyl alcohol (isopropyl alcohol)), isobutanol, butanols (comprising n-butyl alcohol, 2-butanols), amylalcohol (comprising 1-amylalcohol, 2-amylalcohol, 3-amylalcohol), octanol; Ether such as ethyl methyl ether, ether, ethylene-propylene ether and polyethers; Ester such as ethyl acetate, dibasic ester (for example Invista DBE-9); Glycol such as ethylene glycol, diethylene glycol (DEG), polyethylene glycol, propylene glycol, glycol ether, glycol ether acetate, PM acetic acid esters (propylene glycol methyl ether acetate), dipropylene glycol monomethyl ether, ethylene glycol monomethyl ether acetate; Carbonate such as propylene carbonate; Glycerine, acetonitrile, oxolane (THF), dimethyl formamide (DMF), N-METHYLFORMAMIDE (NMF), dimethyl sulfoxide (DMSO) (DMSO); And their mixture.Except water-soluble resin, also can utilize other solvent type resins.Can use one or more thickeners, for example clay such as HECTABRITE DP, POLARGEL NF, organo-clay; Carbohydrate and polysaccharide such as guar gum, xanthans; Cellulose and modified cellulose such as CMC, methylcellulose, methoxyl group cellulose, carboxymethyl cellulose, hydroxyethylcellulose and hydroxypropyl cellulose, cellulose ether, cellulosic ether, chitosan; Polymer such as acrylate and (methyl) acrylate polymer and copolymer, polyvinylpyrrolidone, polyethylene glycol, polyvinyl acetate (PVA), polyvinyl alcohol, polyacrylic acid, oxidic polyethylene, polyvinyl butyral resin (PVB); Diethylene glycol (DEG), propylene glycol, 2-ethyl oxazoline, pyrogenic silica (for example Cabosil), SiO 2 powder and modified urea as
Figure BDA00002875136500601
420(is available from BYK Chemie).Can use other viscosity modifiers and add particle with control viscosity, such as people such as Lewis, public announcement of a patent application US 2003/0091647 is described.Also can utilize fluid auxiliary agent or surfactant, for example octanol and Emerald Performance Materials Foamblast 339.In other exemplary embodiments, one or more insulators 135 can be polymerization, for example are included in PVA or PVB in the deionized water, usually less than percent 12.
Deposition insulation or dielectric layer 315 after, deposit one or more the second conductor 320(for example by printing conductive inks, polymer or other conductors such as metal), it can be conductor, electrically conductive ink or the polymer of above-mentioned any type, perhaps can be (or transparent) conductor of printing opacity, thus that expose with diode 100 – 100J or uninsulated part formation ohmic contact.For example, the second conductor deposition of printing opacity can be become independent pantostrat (formation single electrode), for example be used for illumination or photovoltaic application.For above-mentioned reverse manufacturing, one or more the second conductors 320 need not be (although they may be) printing opacity, allow light to enter or top and the bottom sides of ejaculation equipment 300,300A, 300B.One or more second conductors 320 of printing opacity can comprise any compound, its: (1) has enough conductivity with from first or the top energization of equipment 300 or accept energy (and generally have enough low resistance or impedance reducing or to minimize electric loss and heat production, this can be essential or desired); And (2) have the electromagnetic radiation of one or more selection wavelength transparency or light transmission level that for example the part visible spectrum is scheduled at least or that select.The material selection that is used to form one or more the second conductors 320 printing opacity or non-printing opacity can be different, the utilization that this depends on the selection application of equipment 300 and depends on optional one or more the 3rd conductors.One or more the second conductors 320 be deposited on that diode 100 – 100J expose and/or uninsulated part on, and/or also be deposited on any insulation or the dielectric layer 315, for example deposit by using in printing or the known printing that maybe may become known or the painting method in coating field, alignment or chromatography to any selection are suitably controlled, and this can be essential or desired.
In one exemplary embodiment, except above-mentioned conductor, also can utilize carbon nano-tube (CNT), Nano Silver, polyethylene-dioxy thiophene (for example AGFA Orgacon), poly--3, (commercially available is Baytron P for 4-ethene dioxythiophene and polystyrolsulfon acid, and available from Bayer AG(Leverkusen, Germany)) combination, polyaniline or poly-giving a tongue-lashing are coughed up polymer, (ITO or ATO are suspended in aforementioned any multiple adhesive with particle form usually for tin indium oxide (ITO) and/or antimony tin (ATO), in polymer or the carrier) form one or more second conductors 320 of printing opacity.In one exemplary embodiment, carbon nano-tube is suspended in the volatile liquid with surfactant, for example available from SouthWest NanoTechnologies, Inc.(Norman, Oklahoma, USA) carbon nanotube composition.In addition, one or more the 3rd conductors (not illustrating separately) that have lower impedance or resistance are impregnated in one or more second conductors 320 that maybe can be impregnated in corresponding printing opacity.For example, in order to form one or more the 3rd conductors, can use the counterpart of one or more the second conductors 320 that are printed on printing opacity or electrically conductive ink or the polymer (for example silver China ink, CNT or polyethylene-dioxy thiophene polymer) of layer to form one or more thin electric wire, perhaps can use to be printed on than the electrically conductive ink on one or more second conductors 320 of single transparent larger in the show device or polymer and form one or more thin electric wire (for example, having lattice or trapezoidal pattern).
Other compounds of one or more second conductors 320 of printing opacity comprise aforesaid tin indium oxide (ITO) to form basically can be equal to utilization, and current known other printing opacity conductors that maybe can become known in this area comprise above-mentioned one or more conducting polymers, for example with the available polyethylene-dioxy thiophene of trade name " Orgacon " and multiple carbon and/or carbon nanotube-based transparent conductor.Representational printing opacity electric conducting material is available, for example from DuPont such as 7162 and the 7164ATO semi-transparent conductor.One or more second conductors 320 of printing opacity also can with multiple adhesive, polymer or carrier combinations, comprise aforesaid those, for example under different condition as be exposed to curable (uv the is curable) adhesive of ultraviolet radiation.
Optional stabilized zone 335 can be deposited on one or more the second conductors 320; this can be essential or desired; and for the protection of one or more the second conductors 320, for example be used for preventing that luminous (or emission) layer 325 or any conformal coating between two parties from reducing the conductivity of one or more the second conductors 320.Can utilize the one or more thinner coating (being called protective coating 330) of following any printing ink, compound or coating, for example Nazdar 9727 transparent base.In addition, stabilized zone 335 also optionally comprises heat dissipation and/or optical scatter.
One or more luminous (or emission) layer 325(for example comprises one or more phosphor powder layers or coating) can be deposited on the stabilized zone 335 and (perhaps when not utilizing stabilized zone 335, be deposited on one or more the second conductors 320).In one exemplary embodiment, for example among LED embodiment, can deposit one or more luminescent layers 325, for example be deposited on the whole surface of stabilized zone 335 (perhaps when not utilizing stabilized zone 335, being deposited on one or more the second conductors 320) by above-mentioned printing or painting method.One or more luminescent layers 325 can form by can or being suitable for luminous any position or compound, and described light is in the visible light wave spectrum or in response to the radiative frequency of luminous (or other electromagnetic radiation) displacements (for example Stokes shift) of diode 100-100J (perhaps other electromagnetic radiation of any selection frequency).For example, the luminescent layer 325 of yellow fluorescent powder base can utilize to produce the basically light of white with blue LED 100 – 100J.This type of luminophor comprises multiple fluorescent material, its arbitrarily various ways provide and have any multiple dopant.Form the luminophor of one or more luminescent layers 325 or polymer form utilization or the suspension that particle can have multiple adhesive, and also can be separately mix from different adhesives (for example available from DuPont or Conductive Compounds fluorescent material adhesive), both all help printing or other deposition processs, and be used for making fluorescent material adhere to following layer and subsequently on the layer that covers.Also can uv-curable or heat-curable form provides one or more luminescent layers 325.
Be equal to widely luminous or in other words the light emitting compound be available and in the scope of the present disclosure, unrestrictedly comprise: (1) G1758, G2060, G2262, G3161, EG2762, EG 3261, EG3560, EG3759, Y3957, EY4156, EY4254, EY4453, EY4651, EY4750, O5446, O5544, O5742, O6040, R630, R650, R6733, R660, R670, NYAG-1, NYAG-4, NYAG-2, NYAG-5, NYAG-3, NYAG-6, TAG-1, TAG-2, SY450-A, SY450-B, SY460-A, SY460-B, OG450-75, OG450-27, OG460-75, OG460-27, RG450-75, RG450-65, RG450-55, RG450-50, RG450-45, RG450-40, RG450-35, RG450-30, RG450-27, RG460-75, RG460-65, RG460-55, RG460-50, RG460-45, RG460-40, RG460-35, RG460-30, and RG460-27, available from Intematix(Fremont, California, USA); (2) 13C1380,13D1380,14C1220, and GG-84 is available from Global Tungsten﹠amp; Powders Corp.(Towanda, Pennsylvania, USA); (3) FL63/S-D1, HPL63/F-F1, HL63/S-D1, QMK58/F-U1, QUMK58/F-D1, KEMK63/F-P1, CPK63/N-U1, ZMK58/N-D1 and UKL63/F-U1, available from Phosphor Technology Ltd.(Herts, England); (4) BYW01A/PTCW01AN, BYW01B/PTCW01BN, BUVOR02, BUVG01, BUVR02, BUVY02, BUVG02, BUVR03/PTCR03 and BUVY03 are available from Phosphor Tech Corp.(Lithia Springs, Georgia, USA); And (5) Hawaii655, Maui535, Bermuda465 and Bahama560, available from Lightscape Materials, Inc.(Princeton, New Jersey, USA).In addition, depend on the embodiment of selection, colouring agent, dyestuff and/or dopant can be included in any this type of luminous (or emission) layer 325.In one exemplary embodiment, utilize yttrium-aluminium-garnet (" YAG ") fluorescent material, it is available from Phosphor Technology Ltd. and Global Tungsten﹠amp; Powders Corp..In addition, being used to form the fluorescent material of luminescent layer 325 or other compounds can comprise with the light of specific spectra emission such as the dopant of green glow or blue light.In those situations, can print luminescent layer to limit any given or colored pixels of selecting, for example RGB or CMYK are to provide color shows.Person of skill in the art will appreciate that any equipment 300 embodiment also can comprise this type of one or more luminescent layers 325, it is coupled to or is deposited on stabilized zone 335 or one or more the second conductor 320.
Equipment 300 also can comprise optional protectiveness or seal coating 330; it also can comprise lens or light diffusion or diffusing structure or the filter of any type; the for example plastics of substantial transparent or other polymer; for the destruction that prevents many factors such as weather, airborne corrosive substance etc., perhaps can provide this type of sealing and/or protecting function by the polymer (resin or other adhesives) that uses with luminescent layer 325.For ease of illustration, Figure 54,56 and 57 shows this base polymer (resin or other adhesives), and it has formed protectiveness or seal coating 330, uses imaginary point line indication substantially transparent.) in one exemplary embodiment; use the carbamate sill that protectiveness or seal coating 330 are deposited as one or more conformal coatings; described carbamate sill such as commodity are called NAZDAR 9727(www.nazdar.com) proprietary resin or the curable urethane acrylate PF455BC of uv; it is available from Henkel Corporation(Dusseldorf; Germany), coating layer thickness is 40 microns of about 10 –.In another exemplary embodiment, protectiveness or seal coating 330 are implemented by laminating apparatus 300.Do not illustrate separately, but as relevant United States Patent (USP) is openly applied for (the open patent application serial numbers 12/560 of United States Patent (USP), 334, the open patent application serial numbers 12/560 of United States Patent (USP), 340, the open patent application serial numbers 12/560 of United States Patent (USP), 355, the open patent application serial numbers 12/560 of United States Patent (USP), 364, with the open patent application serial numbers 12/560 of United States Patent (USP), 371, they all are incorporated herein by reference in full, have with their full text in identical effectiveness and the effect shown in this paper) a plurality of lens (being suspended in the polymer (resin or other adhesives)) but also Direct precipitation on one or more luminescent layers 325 and miscellaneous part to form any a plurality of luminaire 300 embodiment.
Person of skill in the art will appreciate that first conductor 310, insulator 315, the second conductor 340 etc. of any amount of utilization are in the scope of the invention that is subjected to claims protection.In addition, a plurality of first conductors 310 of any equipment 300, one or more insulator (or dielectric layer) 315 and a plurality of the second conductor 320(have one or more the 3rd conductors correspondence and optional of any adding) can have multiple orientation and configuration, for example except shown in orientation substantially parallel orientation.For example, a plurality of the first conductors 310 can be basically all parallel to each other, and a plurality of the second conductor 320 also can be basically all parallel to each other.Then, a plurality of the first conductors 310 and a plurality of the second conductor 320 can be (the restriction row and column) that is perpendicular to one another, so that their overlapping area can be used for limiting picture element (" pixel ") and can be discretely and addressable independently.The one or both in a plurality of the first conductors 310 and a plurality of the second conductor 320 that separate on the space with preset width (all limits row or all limits row) during with substantially parallel line when can be applied to, they also can be by row and/or be listed as addressable, line by line addressing continuously for example for example and unrestrictedly.In addition, the one or both in a plurality of the first conductors 310 and a plurality of the second conductor 320 can be applied to above-mentioned layer or sheet.
This point is apparent in can be openly, the composite material such as the pedestal 305 that depend on selection, example devices 300,300A, 300B can design and be processed into highly flexible with deformable, even potential folding, stretchable and potential dress the, and nonrigid.For example, example devices 300,300A, 300B can unrestrictedly comprise clothes flexibility, folding and that can wear, perhaps flexible light, perhaps wallpaper lamp.Because have this type of flexibility, example devices 300,300A, 300B can be rolled into for example poster sample, perhaps fold as a slice paper, and are fully functional when opening again.Also for example, because have this type of flexibility, example devices 300,300A, 300B can have various shape and size, and are configured to any multiple style and are used for other aesthstic purposes.Think that also this kind example devices 300,300A, 300B have the resilience force more much higher than prior-art devices, have ratio such as much smaller easy brokenness and the fragility of typical large screen television.
As indicated above, a plurality of diode 100-100J can for example and unrestrictedly be configured (selecting and corresponding the doping by material) and be photovoltaic (PV) diode or LED.Figure 59 is the block diagram of the first example system 350 embodiment, and wherein a plurality of diode 100 – 100J are applied to the LED of any type or color.System 350 comprise equipment 300A(its except the diode 100-100J with a plurality of LED of being applied as, roughly identical with equipment 300), power supply 340, and also can comprise optional controller (control logic circuit) 345.When giving one or more the first conductors 310 and one or more the second conductor 320 energization, for example by using corresponding voltage (for example from power supply 340) when carrying out energization, energy will be supplied to a plurality of LED(diode 100-100J) in one or more, when each conductor and insulator all are applied to individual layer fully by equipment 300A, perhaps in the first conductor 310 of energization and the crosspoint (overlapping region) of one or more the second conductor 320 correspondences, direction and configuration that this depends on them for example limit pixel, sheet or row/row.Therefore, by selectivity energization the first conductor 310 and one or more the second conductor 320, equipment 300A(and/or system 350) the addressable dynamic display of pixel or lighting device or mark etc. are provided.For example, a plurality of the first conductors 310 can comprise corresponding a plurality of row, and a plurality of printing opacity the second conductor 320 comprises corresponding a plurality of row, and each pixel is by intersecting or row and the corresponding row of overlapping correspondence limit.When in a plurality of the first conductors 310 and a plurality of the second conductor 320 one or two can be used shown in Fig. 54 – 57, also for example energization conductor 310,320 will be to basically whole (or most of) a plurality of LED(diode 100 – 100J) power supply, for example mark is luminous for example to make lighting device or static display.This type of pixel counts can be very high, far above typical high definition level.
Next referring to Figure 59, equipment 300A is coupled by line or connector, and (it for example can be two or more corresponding connectors, perhaps also can be form of bus bars) to power supply 340, it can be DC power supply (for example battery or photovoltaic cell) or AC power supplies (for example family expenses or power supply for building), and also is used for the optional controller of coupling (perhaps equally control logic piece) 345.Power supply 340 can embody in many ways, the power supply of switch coupling AC line for example, and can be for example and unrestrictedly comprise a plurality of assemblies (not illustrating separately) of control diode 100 – 100J energizations.When application controller 345, for example for addressable Luminous display 350 embodiment of system and/or dynamic 350 embodiment of Luminous display system, can utilize controller 345 control diodes 100 – 100J(via a plurality of different the first conductors 310 and the second conductor 320 of a plurality of printing opacities) energization, this be electronic applications known maybe will become known, and generally include processor 360, memory 365 and I/O (I/O) interface 355.When application controller 345 not, for example for a plurality of illuminator 350 embodiment (they are usually non-addressing and/or non-dynamic 350 embodiment of Luminous display system), system 350 is coupled to electricity or electronic switch (not illustrating separately) usually, it can comprise switch configuration of any adequate types, for example open and close and/or dim illuminator.
" processor " 360 can be controller, processor or the control logic circuit of any type, and can be presented as that one or more processors 360 are to carry out function as herein described.As term processor used herein, processor 360 can comprise use single integrated circuit (" IC "), perhaps can comprise and use a plurality of integrated circuits or other assemblies that connects, arranges or be gathered together, for example controller, microprocessor, digital signal processor (" DSP "), parallel processing device, polycaryon processor, customization IC, application-specific integrated circuit (ASIC) (" ASIC "), field programmable gate array (" FPGA "), self adaptation are calculated IC, associative storage (for example RAM, DRAM and ROM) and other IC and assembly.Therefore, as used herein, term processor is interpreted as meaning equally and comprises that customization IC, ASIC, processor, microprocessor, controller, FPGA, the self adaptation of single IC or configuration calculate some other classifications of IC or integrated circuit, they and associative storage such as microprocessor memory or additional RAM, DRAM, SDRAM, SRAM, MRAM, ROM, FLASH, EPROM or E 2PROM exercises following function together.Processor (for example processor 360) can be transformed or be constructed (via programming, FPGA interconnection or hardwired) with its associative storage and is used for carrying out method of the present invention, the for example selectivity address pixels of dynamic display embodiment or the addressing of row/row for example is used for mark embodiment.For example, when processor moves (namely, electric power starting and functionating) time, described method can programme and be stored as batch processing order or other codes (or the configuration that is equal to or other programs) and be used for subsequently execution in the processor 360 with its associative storage (and/or memory 365) and other equivalent assemblies.Similarly, when processor 360 can be applied as FPGA whole or in part, also can design, structure and/or hardwired customization IC and/or ASIC, FPGA, customization IC or ASIC to be to implement method of the present invention.For example, processor 360 can be applied as processor, controller, microprocessor, DSP and/or the ASIC of configuration, be referred to as " controller " or " processor ", they programme respectively, design, transform or construct to implement method of the present invention with memory 365.
Processor (for example processor 360) can be constructed (by programming, FPGA interconnection or hardwired) together to control a plurality of different the first conductors 310 and a plurality of the second conductor 320(and optional one or more the 3rd conductors 145 from its associative storage) energization (applied voltage), be used for the correspondence control to exhibition information.For example, when processor 360 operation, exhibition information static or that change in time can be in the processor 360 with its associative storage (and/or memory 365) and other equivalent assemblies programming and storage, structure and/or hardwired become batch processing order (or the configuration that is equal to or other programs) to be used for subsequently execution.
The memory 365 that can comprise data repository (or database) can be presented as the form of arbitrary number, be included in any computer or the readable data storage medium of other machines, in storage arrangement or other storages or ac equipment for storage or exchange of information, device at present known or that become available in the future includes but not limited to memory integrated circuit (" IC "), or the memory portion of integrated circuit (for example residence memory in processor 360), they are volatile or nonvolatile, removable or non-removable, unrestrictedly comprise RAM, FLASH, DRAM, SDRAM, SRAM, MRAM, FeRAM, ROM, EPROM or E 2The storage arrangement of PROM or any other form, the for example readable storage medium of magnetic hard drive, CD-ROM drive, disk or tape drive, hard disk drive, other machines or memory, storage medium or data storage device or the circuit of memory such as floppy disk, CDROM, CD-RW, digital versatile disc (DVD) or other optical memory or any other type, it depends on that the embodiment of selection is known or becomes known.In addition, this type of computer-readable medium comprises any type of interchange medium, it is presented as computer-readable order, data structure, program module or other data in data-signal or modulation signal, for example electromagnetism or optical carrier or other transport sectors, comprise any information transmitting medium, its can be in wired or wireless signal coded data or other information, described signal comprises electromagnetic signal, optical signalling, acoustic signal, RF or infrared signal etc.Memory 365 can be suitable for storing table such as the database table of multiple look-up table, parameter, coefficient, other information and data, program or order (software of the present invention is all) and other types.
As indicated above, sequencing is carried out in processor 360 uses for example software and data structure of the present invention, thereby implements method of the present invention.Therefore, system and method for the present invention can be presented as the software that this class method or other orders are provided, the Management Information Base that for example comprises in above-mentioned computer-readable medium and/or table top data.In addition, metadata also can be used for defining the different pieces of information structure of look-up table or database.By way of example and unrestrictedly, this type of software can be source code or object code form.Also source code can be assembled into the form (comprising compositional language order or configuration information) of number order or object code.Software of the present invention, source code or metadata can be presented as the code of any type, for example C, C++, SystemC, LISA, XML, Java, Brew, SQL and modification thereof or the programming language of exercising any other type of function described herein comprise multiple hardwares definition or Hardware modeling language (for example Verilog, VHDL, RTL) and the data obtained library file (for example GDSII).Therefore, this paper is equal to any programming language that use " construct ", " program construction body ", " software building body " or " software " meant and referred to have any kind of any grammer or feature, it provides or can be translated to provide the function that is associated or designation method (when instantiation or be written into processor or computer and when being performed, comprise for example processor 360).
As mentioned above, software of the present invention, metadata or other source codes and any gained bit file (object code, database or look-up table) may be embodied in the readable data storage medium of any tangible storage medium such as any computer or other machines, become computer-readable order, data structure, program module or other data, for example above-mentioned for memory 365, for example data storage device or the medium of floppy disk, CDROM, CD-RW, DVD, magnetic hard drives, CD-ROM drive or any other type.
Can use I/O interface 355, this is known in the artly maybe can become known, and the capacity, low voltage processors that can comprise the impedance phase coupling to for example from the voltage translation of the interface of high voltage control bus, in response to a plurality of switching mechanisms (for example transistor) and/or the physical coupling structure of the different circuits of the signaling switch that comes self processor 360 or connector.In addition, I/O interface 355 also can be suitable for receiving and/or the signal of transmission system 350 outsides, for example for example receives real time information with control example such as Dynamic Display by hardwired or RF signal.
For example, exemplary the first system embodiment 350 comprises equipment 300A, and wherein a plurality of diode 100 – 100J are light-emitting diodes, and the I/O interface 355 of adaptive any multiple standards bulb Edison socket.On connect described example and unrestrictedly, I/O interface 355 can be set size and dimension for and conform to one or more standardized threaded configuration, for example E12, E14, E26 and/or E27 screw base reference material, such as middle screw base (E26) or candlestick shape screw base (E12), also for example and/or by other a plurality of standards of ANSI (" ANSI ") and/or Illuminating Engineering Society issue.In other exemplary embodiments, also for example and unrestrictedly, I/O interface 355 can be set size and dimension for and conform to standard fluorescence bulb socket or two Plug bases, such as the GU-10 pedestal.Also this type of exemplary the first system embodiment 350 can be considered as being equal to the equipment of another kind of type, especially all the more so when for example and unrestrictedly having the form factor that is suitable for inserting Edison or fluorescence socket.
For example, can form LED-based bulb, it has the design that is similar to the conventional incandescent bulb, has the screw-type connecting portion as the part of interface I/O355, for example ES, E27, SES or E14, it also can be suitable for connecting any supply socket type, comprise be selected from that L1 – special use is low-yield, PL – 2 pin – special uses are low-yield, PL – 4 pin – special uses are low-yield, the connection type of G9 halogen capsule, G4 halogen capsule, GU10, GU5.3, bayonet socket, little bayonet socket or any other connection known in the art.
Except controller 345 as shown in figure 41, person of skill in the art will appreciate that the countless control circuits that waits isomorphism type, layout, kind and type within the scope of the invention known in the art.
Equipment 300 and the first system 350 can be applied to widely goods, and can in other words be applicable to multiple purpose.The limiting examples of this based article and purposes comprises that lighting device such as bulb, fluorescent tube, lamp, lampshade, working light, decorative lamp, flexible lamp, forehead lamp, safety lamp, " mood dimmable lamp "-it can comprise or can not comprise that lamp, color lamp and/or variable colored lights, drawing lamp, major light and the exhibition of adjustable dark show that lamp – for example is used for illuminating wall decoration.The first system 350 generally also will comprise the mechanical structures of the light-emitting component that is enough to support apparatus 300, and can adopt the general shape of other lighting device types that bulb or it is designed to replace.
The first system 350 with equipment 300 can provide the light output of a plurality of levels.A method of management equipment output potential is to improve or reduce the concentration of diode 100 – 100J, and it is present on one or more conductors 310 of equipment 300.In general, described equipment can provide the light output at least about 25 to 1300 lumens.
The small size that is used as the diode 100 – 100J of LED provided herein allows very fast heat radiation.Therefore, the first system 350 and equipment 300 provide very efficiently light output by minimizing heat production.Therefore, can in the situation of radiator that lacks for the heat radiation purpose, provide this paper equipment 300.In addition, equipment 300 has less than about 150 ℃, perhaps less than about 125 ℃, perhaps less than about 100 ℃ or less than about 75 ℃, perhaps less than about 50 ℃ average operating temperature.
As used herein, term " average operating temperature " is the temperature according to the following steps record:
1. open light-emitting device or equipment, so that it provides its time of at least 10 minutes of maximum lumen output.Therefore, required any " preheating " time of maximum lumen output will be need not to reach.
2. use infra-red thermometer as
Figure BDA00002875136500701
The hand-hold type infra-red thermometer records ten times measured temperature under 10 minutes increment.Calculate the mean value of the temperature of record, and the mean value that calculates is " average operating temperature ".
Temperature survey should be carried out under the following conditions:
1. ambient temperature should be about 20 ℃.
2. temperature survey is directly carried out at the outermost light-emitting area of device or equipment.
3. outermost light-emitting area and light emitting source are (that is, LED) not by between two parties radiator, insulating barrier or other heat sink materials not separately.
As indicated above, a plurality of diode 100-100J also can be configured (selecting to mix with corresponding by material) and become photovoltaic (PV) diode.Figure 60 is the block diagram of the second example system 375 embodiment, and wherein diode 100-100J is applied to photovoltaic (PV) diode.System 375 comprise equipment 300B(its except having a plurality of diode 100-100J that are applied as photovoltaic (PV) diode, roughly identical with equipment 300) and one or two energy storage device 380 such as battery, for example electric device or electric installation become energy delivery the interface circuit 385 of energy perhaps to be used for use equipment or system or energy distribution equipment or system.(in not comprising other exemplary embodiments of interface circuit 385, other configuration of circuit can be used for use equipment or system or energy distribution equipment or system directly provides energy or electric energy to this type of energy.) in system 375, one or more the first conductors 310 of Coupling device 300B are to form the first end (for example negative terminal or plus end), and one or more the second conductors 320 of Coupling device 300B to be to form the second end (for example corresponding plus end or negative terminal), then they be can be coupled to connect one or two energy storage device 380 or interface circuit 385.When light (for example sunlight) incides on the equipment 300B, described light can focus on one of them of a plurality of photovoltaics (PV) diode 100 – 100J, it changes into electron-hole pair with incident photon then, cause across first terminal and the second terminal generation output voltage, and output to one or two energy storage device 380 or interface circuit 385.
Should be pointed out that when the first conductor 310 has interdigital shown in Figure 55 or pectinate texture, can use the first conductor 310B energization the second conductor 320, perhaps similarly, the voltage of generation can be accepted across the first conductor 310A and 310B.
Figure 61 is the flow chart that the illustrative methods embodiment that makes for equipment 300,300A, 300B is shown, and useful general introduction is provided.Start from initial step 400, one or more the first conductors (310) are deposited on the pedestal (305), for example by printing conductive inks or polymer or steam deposition, with one or more metal sputterings or coating pedestal (305), solidify subsequently or partly solidified electrically conductive ink or polymer, perhaps remove plated metal from unexpected position potentially, this depends on implementation, step 405.The a plurality of diodes 100 – 100J that usually have been suspended in liquid, gel or other compounds or mixture (for example being suspended in the diode printing ink) can be deposited on one or more the first conductors subsequently, step 410 is also usually by printing or apply the ohmic contact be formed between a plurality of diode 100-100J and one or more the first conductor (its also can be for example and unrestrictedly relate to a plurality of chemical reactions, compression and/or heating).
Then dielectric or insulating material such as dielectric ink be deposited on a plurality of diode 100-100J upper or they around, for example around diode 100-100J(and curing or heating) periphery, step 415 is to form one or more insulators or dielectric layer 315.Next, one or more the second conductor 320(its can be printing opacity or can be lighttight) then be deposited on a plurality of diode 100-100J and form and they contact, for example be deposited on the dielectric layer 315 and the upper surface of diode 100,100A, 100B, 100C around, and solidify (or heating), step 420 also is used to form the ohmic contact between one or more the second conductors (320) and a plurality of diode 100-100J.In the exemplary embodiment, for example be used for the addressable display unit, a plurality of (printing opacity) second conductor 320 is oriented as and is substantially perpendicular to a plurality of the first conductors 310.(randomly, one or more the 3rd conductors can be deposited (and solidifying or heating) on one or more (printing opacity) second conductor of correspondence).
Select as another kind, before step 420 or during can test, remove non-functional or defective diode 100 – 100J or make them invalid in other words.For example, for the PV diode, surface (the first side) available laser or other light source scanning of the equipment that part is finished, and (or single diode 100,100A, 100B, 100C) when the electroresponse of expectation is not provided, can uses high intensity laser beam or other to remove technology it is removed when the zone.Also for example, for the light-emitting diode of having switched on, surface (the first side) available light sensing device scanning, and when zone (or single diode 100 – 100J) does not provide the light output of expectation and/or attracts overcurrent (namely, the electric current that surpasses scheduled volume) time, also can use high intensity laser beam or other to remove technology it is removed.Depend on implementation, for example depend on the diode 100 – 100J that how to remove non-functional or defective, can implement this type of testing procedure, but not in following step 425,430 or 435 rear enforcements.Then stabilized zone 335 can be deposited on one or more the second conductors 320, step 425 is deposited on luminescent layer 325 on the stabilized zone step 430 subsequently.Also usually be suspended in polymer; adhesive; or in other compound or the mixture to form lens or lens particle printing ink or a plurality of lens of suspension (not illustrating separately) with being placed on or being deposited on the luminescent layer; this is also undertaken by printing usually; to comprise that perhaps a plurality of preforming lens boards that are suspended in the lens in the polymer are connected on the first side of the equipment finished of part (for example passing through laminating method); then pass through any optional deposition (for example by printing) of protective coating (and/or color of selecting); step 355; and described method can finish, and returns step 440.
Suppose that LED of the present invention has low thermal output, in one embodiment, equipment is without radiator and/or fin etc.
Suppose that LED of the present invention can be printed on the multiple material, the shape and size of " bulb " part of described device are almost countless.In one embodiment, luminous power consumption assembly comprises the substrate that cone shape is shaped, and wherein LED is printed on the inner and cone outside of cone.In a circulation, be enabled in the LED of cone inside to produce " spotlight " luminescent effect.In the second circulation, be enabled in the LED of cone outside to produce " covering " or " scattering " effect.In the 3rd circulation, be enabled in the LED of cone inside and cone outside to produce the light of maximum.
A plurality of configurations of imagination power supply module and power consumption assembly.Power supply module can comprise that rail system and power consumption assembly can comprise the LED light belt.The LED light belt can be detachably connected to for the rail system that receives electricity and/or data.Alternatively, power supply module can comprise the plug that is suitable for inserting wall socket, and luminous power consumption assembly is the LED sheet material, is preferably flexible sheets.
As mentioned above, " bulb " of device partly the shape and size of (that is, luminous power consumption assembly or bulb sub-assembly 702) are almost countless.For example, shown in Figure 65, lighting device 700 can have bulb sub-assembly 702, and described bulb sub-assembly can comprise a light-emitting component, and for example sidewall 703, and it is coupled to lamp socket 710 in the mode that will be explained below.Sidewall 703 comprises that aforementioned LED forms.As used herein, when the surface was described to luminous or can be luminous, the surface of indication comprised that LED forms.This point will describe in detail hereinafter, comprise that leading flank, dorsal surface or two sides (and some parts of leading flank and/or dorsal surface) of the material of sidewall 703 can be luminous.The sidewall 703 of bulb sub-assembly 702 can be formed by single piece of material, perhaps can by two or more the multi-disc material form, described material is to allow in the monolithic each jointly to carry out electric coupling in the mode of single piece of material form functionating.Two or more the multi-disc material can be fixed with common formation sidewall 703 by any method known in the art, described method comprises for example ultra-sonic welded, bonding or mechanical couplings.Sidewall 703 in the following embodiments or any light tiles or element can have the texturizing surfaces (not shown).The veining method can be implemented during light tiles is made, and perhaps can be used as second and operates on the sheet of manufacturing and implement.Superficial makings can have any suitable surface roughness and/or percent ripple.For example, when described when not luminous, the roughness of superficial makings can give the outward appearance of light tiles ground glass.In addition, hyaline layer can be placed on the light tiles surface, and the thickness of hyaline layer can change to provide superficial makings.
Still referring to Figure 65, the sidewall 703 of bulb sub-assembly 702 can comprise top edge portion 704, and its diameter is substantially equal to the diameter of bottom margin part 706, so that sidewall 703 forms cylinder.Top edge portion 704 can be limited to the plane, and described plane can be substantially horizontal.So construct, bulb sub-assembly 702 can have the external dimensions that is similar to conventional bulb and be inserted into the lighting device that is designed to be used in conventional bulb with permission bulb sub-assembly 702.For example, the sidewall 703 of the bulb sub-assembly 702 shown in Figure 65 can have height H and outer diameter D, they each be substantially equal to bulb height (not comprising screw base) and the maximum outside diameter of conventional bulb.More specifically, the sidewall 703 of the bulb sub-assembly 702 shown in Figure 65 can have height H and outer diameter D, they each be substantially equal to the bulb height (not comprising screw base) of A19 incandescent lamp bulb and maximum outside diameter-namely, be respectively about 31/2 inch (88.9mm) and about 23/8 inch (60.3mm).Yet height H and outer diameter D can have any suitable value separately, comprise the height H that is not equivalent to conventional bulb and/or the value of outer diameter D (or maximum outside diameter).
Imagine the modification of arbitrary number of shape and size of the sidewall 703 of above-mentioned bulb sub-assembly 702.For example, the plane of the top edge portion 704 of sidewall 703 can arrange at angle with respect to the horizontal reference plane, shown in Figure 66.In addition, shown in Figure 67, top edge portion 704 can comprise two or more edge sections 712, and the angle that in two or more edge sections 712 each can be different from neighboring edge section 712 arranges, thereby forms for example saw tooth pattern.Yet each in two or more edge sections 712 can be identical, so that pattern repeats.For example, each had semi-circular shape in two or more edge sections 712 or can have sinusoidal shape is shown in Figure 68.Other embodiment can have top edge portion 704, and it can have repetition or not repeat any combination of edge section 712, and described edge section can form any shape or combination of shapes.The maximum height of any sidewall 703 of the embodiment shown in Figure 66,67,68 or any following embodiment and external diameter can be substantially equal to for example the bulb height of the conventional bulb of A19 bulb (not comprising screw base) and maximum outside diameter.Yet maximum height H and maximum outside diameter D can have any suitable value separately, comprise the height H that is not equivalent to conventional bulb and/or the value of outer diameter D (or maximum outside diameter).Bulb sub-assembly 702 also can comprise the cladding element (not shown), and it can be at least partially disposed on the sidewall 703, and described cladding element can be rigidly secured on the lamp socket 710 so that the protection of oppose side wall 703 to be provided.Cladding element can be made by for example transparent plastic material.Alternatively, cladding element can be made by any material, or has any shape, is applicable to application-specific.
Shown in Figure 101 A, the embodiment of sidewall 703 can have a plurality of cannelures 870, and it may extend to the point of adjacent top marginal portion 704 and the point of adjacent bottom marginal portion 706.Similarly, when the top edge portion 704 of sidewall 703 with vertically towards 706 displacement of bottom margin part the time, be arranged on the part of the sidewall 703 between the groove 870 with radially outward expansion, shown in Figure 101 B.Sidewall 703 can comprise storage medium, and it allows the part of sidewall 703 to expand outwardly to remain on desired locations.Alternatively, supporting construction can be used for sidewall 703 is remained on desired locations as being slidably disposed on center pole hub (not shown) on every side.
In another embodiment shown in Figure 102 A and 102B, sidewall 703 can form fan shape by a plurality of alternate foldings 872, and the first end of sidewall 703 can be fixed to lamp socket 710(or base assembly 735) on.Therefore, in the primary importance shown in Figure 102 A, the configuration that sidewall 703 can relatively flat along or the longitudinal axis that is parallel to lamp socket 710 extend.In the second place shown in Figure 102 B, the second end of sidewall 703 can be with respect to first end to outer displacement, thereby makes sidewall 703 be fan shape.Sidewall 703 can comprise storage medium, and it allows sidewall 703 to remain on desired locations.Alternatively, can weigh sidewall 703 outermost parts to allow gravity that sidewall 703 is remained fan shape.The first side of sidewall 703 and/or any part of the second side can both be luminous.
In an additional embodiment, the top edge portion 704 of sidewall 703 can limit opening 708, and it can for example allow on the inner surface 714 of the sidewall 703 that projects upwards luminous.Yet shown in Figure 69, substantially horizontal top surface 716 can intersect with the top edge portion 704 of sidewall 703, so that bulb sub-assembly 702 does not have opening 708.Alternatively, top surface 716 can be from top edge portion 704 to bias internal, so that lip (not shown) extend through top surface 716 in the axial direction.In another embodiment of bulb sub-assembly 702, top surface 716 can be non-level, but can arrange at angle with respect to the horizontal reference plane on the contrary.Alternatively, top surface 716 can be and for example becomes combination profile or that have any other molded non-planar or plane and/or molded non-planar.More specifically, top surface can have for example cone shape or semi-spherical shape.Top surface 716 can be coupled to sidewall 703 by bonding or mechanical couplings, and for example inserted sheet/groove disposes or for example connect by use the ring of one or more sidewalls 703 or top surface 716.Alternatively, sidewall 703 and top surface 716 can be formed by single piece of material so that single piece of material can be folded to form sidewall 703 and top surface 716 the two.
Shown in Figure 70, bulb sub-assembly 702 can comprise circle wall 718, its in the axial direction the top edge portion 704 of extend through sidewall 703 to intersect with top surface 716.Circle wall 718 can have any suitable shape, for example frusto-conical shape or circle.In addition, the top of circle wall 718 can limit opening 708, and perhaps circle wall 718 can comprise the inside elongation lip that limits opening 708, but not intersects with top surface 716.Circle wall 718 can comprise a plurality of wall section (not shown), and they comprise circle wall 718 jointly, and described wall section can be the plane and/or become profile.
As hereinafter describing in detail, any part of the sidewall 703 of bulb sub-assembly 702 can be luminous.For example, in the embodiment shown in Figure 65, the outer surface 720 of sidewall 703 can the first colour light emitting, and the inner surface 714 of sidewall 703 can the second colour light emitting.Alternatively, outer surface 720 and inner surface 714 are can same color luminous.In another embodiment, only have inner surface 714 luminous.In this configuration, shown in Figure 71, reflecting surface 722 can be arranged on the cylinder inside that the sidewall 703 by contiguous lamp socket 710 forms, and reflecting surface 722 can have basically parabolical shape reflecting opening 708 from the inside directional light of sidewall 703 inner surfaces 714.Reflecting surface 422 can have any suitable shape or combination of shapes, for example the plane, oval-shaped, hyp or polyhedral, but not above-mentioned parabolical shape.Bulb sub-assembly 702 can comprise inner insert 724, but not reflecting surface 722, described insert can be luminous so that opening 708 is passed through in the directional light emission, shown in Figure 72.Inner insert 724 can be bottom margin part 706 plane and that can be close to or contact sidewall 703 and arranges.Yet inner insert 724 can be arranged on any axial positions of sidewall 703 inside, and inner insert 724 can have and is suitable for any shape or the combination of shapes of directional light by opening 708.Inner insert 724 or reflecting surface 722 can have the external diameter of the diameter of the inner surface 714 that is slightly less than sidewall 703.For example, (external diameter of the inner insert 724 of 60.3mm) – or reflecting surface 722 can be about 21/4 inch (57.2mm) if the outer diameter D of sidewall 703 is equivalent to about 23/8 inch of maximum Wai Jing – of A19 incandescent lamp bulb.Yet inner insert 724 or reflecting surface 722 can have any diameter.In another embodiment of bulb sub-assembly 702, two or more inner inserts 724 can be arranged in the sidewall 703, and inner insert 724 can have any shape or the size that is suitable for application-specific.Similarly, two or more reflecting surfaces 722 can be arranged in the sidewall 703, and reflecting surface 722 can have any shape or the size that is suitable for application-specific.In addition, the combination of reflecting surface 722 and inner insert 724 can be arranged on sidewall 703 inside.
Shown in Figure 73, one or more windows 726 can be arranged on any or two in sidewall 703 and the top surface 716.In one or more windows 726 each can have any shape or combination of shapes, for example star, ellipse, circle or polygonal shape.In addition, the one or more shapes that adopt letter, symbol, logo, word or numeral in the window 726.In an embodiment of bulb sub-assembly 702, one or more windows 726 can be arranged on the sidewall 703, and sidewall 703 can be only luminous on inner surface 714.The total surface area of one or more windows 726 can comprise total useable surface area (that is, the total surface area of sidewall 703, the if there is no words of window 726) of the sidewall 703 of certain percentage, and this percentage can be any suitable value.For example, the total surface area of the window shown in Figure 73 726 can comprise total useable surface area of 25% sidewall 703.
Sketch as mentioned, the bottom margin part 706 of sidewall 703 can be coupled to lamp socket 710 by any mode known in the art (for example by bonding or mechanical couplings), and it will describe in detail hereinafter.More specifically, shown in Figure 74, be fixed to the hoop ridge 730 that lamp socket 710 projects upwards a part of agglomerability of the sidewall 703 of adjacent bottom marginal portion 706.As shown in the figure, be coupled to the outer surface 720 of sidewall 703 the inner surface agglomerability of ridge 730, but the outer surface agglomerability of ridge 730 be coupled to the inner surface 714 of sidewall 703.Alternatively, the inserted sheet (not shown) that extends from the bottom margin part 706 of sidewall 703 can be accessed by in the elongated slot (not shown) that forms on lamp socket 710 surfaces.In addition, the parts of one or more inward directions such as post or the end of a thread can be outstanding from the inner surface of lamp socket 710, and in the hole of bottom margin part 706 settings of the accessible adjacent sidewall 703 of the parts of each inward direction of lamp socket 710.In an alternative embodiment, one or more plastics inserted sheet (not shown) can be fixed to by any device known in the art the sidewall 703 of adjacent bottom marginal portion 706, for example be fixed by bonding or mechanical fasteners, and described plastics inserted sheet can be accessed by in the inserted slot (not shown) that forms in lamp socket 710.In another embodiment of bulb sub-assembly 702, the mode of the part that the ring (not shown) can fixed sidewall 703 (for example the bottom margin part 706 of adjacent sidewall 703 arrange the inserted sheet that stretches out) is coupled to lamp socket 710.Described ring can or be threaded connection by for example inserted sheet/groove connection and be coupled to lamp socket 710.
As sidewall 703(and top surface 716 and circle wall 718 hereinafter are described in detail in detail) can be electrically coupled to lamp socket 710 by any device known in the art.For example one or more pins or blade can be outstanding downwards from the bottom margin part 706 of sidewall 703, and pin or blade can be accessed by in the container or groove that forms in lamp socket.
In the embodiment shown in Figure 84, sidewall 703 can place on the lamp socket 710 removedly, itself and base assembly 735 global formations.Such as will be hereinafter institute's detailed description, it is luminous with permission sidewall 703 that base assembly 735 is suitable for being coupled to any power supply.For example, shown in Figure 84, base assembly 735 comprises the bottom that has for the Edison screw of coupling power.The sidewall 703 of bulb sub-assembly 702 can have the convergence frusto-conical shape of brachymemma, but and bottom margin part 706 settings of circumference conducting strip 738 adjacent sidewall 703.The bottom margin part 706 of sidewall 703 and the desirable any value of the diameter of top edge portion 704, the diameter of bottom margin part 706 is greater than the diameter of top edge portion 704.For example, the diameter of bottom margin part 706 can approximate greatly maximum outside diameter-about 23/8 inch (60.3mm) of A19 incandescent lamp bulb, and the diameter of top edge portion 704 can be about 13/4 inch (44.5mm).Lamp socket 710 can have the convergence frusto-conical shape of brachymemma, it generally is equivalent to the shape of sidewall 703, so that the inner surface 714 of the sidewall 703 of adjacent bottom marginal portion 706 can be assembled on the circumferential outer surface 740 tightly, thereby sidewall 703 is coupled to lamp socket 710.Lamp socket 710 can have the maximum outside diameter of getting any desired value.For example, maximum outside diameter can be the diameter that approximates greatly or be slightly larger than bottom margin part 706.In addition, one or more magnet can be arranged on lamp socket 710 and the sidewall 703 with sidewall 703 fastened to each other and lamp socket 710.Alternatively, one or more ridges (or locking device) can form on a sidewall 703 therein, and one or more ridge can be bonded on the ridge (or locking device) of the correspondence that forms on the lamp socket 710.So combination is arranged on lamp socket 710 conducting strip 742 on every side and can contacts the conducting strip 738 that is arranged on the sidewall 703, so that sidewall 703 is electrically coupled to lamp socket 710.
In another embodiment shown in Figure 75, the sidewall 703 of bulb sub-assembly 702 can have the basically frusto-conical shape of bifurcated, but not the cylinder form shown in Figure 65.More specifically, sidewall 703 can comprise top edge portion 704, and the diameter that described top edge portion has is greater than the diameter of bottom margin part 706.For example, the diameter of top edge portion 704 can be the maximum outer footpath – about 23/8 inch (60.3mm) that approximates greatly the A19 incandescent lamp bulb, and the diameter of bottom margin part 706 can be about 13/4 inch (44.5mm).Yet except sidewall 703 difference in shape, the bulb sub-assembly 702 of Figure 75 is can be basically identical with the embodiment of bulb sub-assembly 702 shown in Figure 65, and the bulb sub-assembly 702 of Figure 75 can comprise any or all parts of the embodiment of above-mentioned Figure 65.For example, shown in Figure 75, the top edge portion 704 of the sidewall 703 of frusto-conical shape can be restricted to the plane, and described plane can be substantially horizontal.Alternatively, described plane can arrange at angle with respect to the horizontal reference plane, is similar to the embodiment shown in Figure 66.In addition, the embodiment that has a bulb sub-assembly 702 of frusto-conical shape sidewall 703 for example also can comprise edge section 712, circle wall 718, reflecting surface 722 and inner insert 724 and/or the one or more window 726 along top edge portion 704.In addition, having the function of embodiment of the bulb sub-assembly 702 of frusto-conical shape sidewall 703 can be identical with the function of the embodiment of bulb sub-assembly 702 shown in above-mentioned Figure 65.For example, the inner surface 714 of sidewall or any or two in the outer surface 720 can be luminous in the above described manner.
In another embodiment shown in Figure 76, the sidewall 703 of bulb sub-assembly 702 can have assembles frusto-conical shape basically, but not the cylinder form shown in Figure 65.More specifically, sidewall 703 can comprise top edge portion 704, and the diameter of described top edge portion is less than the diameter of bottom margin part 706.For example, the diameter of bottom margin part 706 can be maximum outside diameter-about 23/8 inch (60.3mm) that approximates greatly the A19 incandescent lamp bulb, and the diameter of top edge portion 704 can be about 13/4 inch (44.5mm).Yet except sidewall 703 difference in shape, the bulb sub-assembly 702 of Figure 76 is can be basically identical with the embodiment of bulb sub-assembly 702 shown in Figure 65, and the bulb sub-assembly 702 of Figure 76 can comprise any or all parts of the embodiment of above-mentioned Figure 65.For example, shown in Figure 76, the top edge portion 704 of the sidewall 703 of frusto-conical shape can be restricted to the plane, and described plane can be substantially horizontal.Alternatively, described plane can arrange at angle with respect to the horizontal reference plane, is similar to the embodiment shown in Figure 66.In addition, the embodiment that has a bulb sub-assembly 702 of frusto-conical shape sidewall 703 for example also can comprise edge section 712, circle wall 718, reflecting surface 722 and inner insert 724 and/or the one or more window 726 along top edge portion 704.In addition, having the function of embodiment of the bulb sub-assembly 702 of frusto-conical shape sidewall 703 can be identical with the function of the embodiment of bulb sub-assembly 702 shown in above-mentioned Figure 65.For example, the inner surface 714 of sidewall or any or two in the outer surface 720 can be luminous in the above described manner.
In another embodiment shown in Figure 77, the sidewall 703 of bulb sub-assembly 702 can have basically coniform shape, but not above-mentioned convergence frusto-conical shape.More specifically, the cross-sectional diameter of sidewall 703 can the end 732 from bottom margin part 706 to the highest part that is arranged on sidewall 703 axially on constantly reduce.The desirable any suitable value of the height of cone and diameter.For example, the diameter of bottom margin part 706 can be the maximum outer footpath – about 23/8 inch (60.3mm) that approximates greatly the A19 incandescent lamp bulb, and the height of cone can be the high degree – that approximates greatly the A19 incandescent lamp bulb about 31/2 inch (88.9mm).Except sidewall 703 difference in shape, the bulb sub-assembly 702 of Figure 77 is can be basically identical with the embodiment of bulb sub-assembly 702 shown in Figure 65 and 76.For example, the embodiment that has a bulb sub-assembly 702 of conical side wall 703 also can comprise one or more windows 726.In addition, having the function of embodiment of the bulb sub-assembly 702 of conical side wall 703 can be identical with the function of the embodiment of bulb sub-assembly 702 shown in above-mentioned Figure 65.For example, the inner surface 714 of sidewall or any or two in the outer surface 720 can be luminous in the above described manner.
In another embodiment shown in Figure 78 A and 78B, the sidewall 703 of bulb sub-assembly 702 can comprise a plurality of polyhedral surfaces 734.Sidewall 703 can comprise the polyhedral surface 734 of arbitrary number, and sidewall 703 can adopt any overall shape.For example, shown in Figure 78 A and 78B, the convergence cone shape of brachymemma can be adopted in the top of sidewall 703, and the mid portion of sidewall 703 can adopt cubical shape, and the shape of the bifurcated cone of brachymemma can be adopted in the bottom of sidewall 703.Yet, except sidewall 703 difference in shape, the bulb sub-assembly 702 of Figure 78 A and 78B is can be basically identical with the embodiment of bulb sub-assembly 702 shown in Figure 65, and the bulb sub-assembly 702 of Figure 78 A and 78B can comprise any or all parts of the embodiment of above-mentioned Figure 65.For example, shown in Figure 78 A and 78B, the top edge portion 704 of the sidewall 703 of frusto-conical shape can be defined to the plane, and described plane can be substantially horizontal.In addition, the embodiment of Figure 78 A and 78B for example also can comprise edge section 712, circle wall 718, reflecting surface 722 and inner insert 724 and/or the one or more window 726 along top edge portion 704.In addition, the function of the embodiment of the bulb sub-assembly 702 of Figure 78 A and 78B can be identical with the function of the embodiment of bulb sub-assembly 702 shown in above-mentioned Figure 65.For example, the inner surface 714 of sidewall or any or two in the outer surface 720 can be luminous in the above described manner.
In another embodiment of the bulb sub-assembly 702 with polyhedral surface 734, the polyhedral surface shown in Figure 79 734 of sidewall 703 can form cone shape convergence, brachymemma, and it is can be basically identical with the embodiment of the Figure 75 of the sidewall 703 with bifurcated frusto-conical shape.Alternatively, polyhedral surface shown in Figure 79 can be substantially horizontal, so that the shape of cross section of sidewall 703 is constant along the longitudinal axis of sidewall 703.In addition, shown in Figure 80, sidewall 703 can comprise the polyhedral surface 734 of vertical setting, it arranges at angle with respect to adjacent polyhedral surface 734, and the polyhedral surface 734 that vertically arranges can or can arrange with respect to the vertical reference axis at angle perpendicular to the vertical reference axis, thereby assembles or bifurcated with the sidewall 703 that axially upward extends away from lamp socket 710.Although above-mentioned polyhedral surface is plane basically, it is profile, crooked or in other words nonplanar that one or more in the polyhedral surface 734 can be into.In above-mentioned any embodiment, the desirable any value of the maximum outside diameter of sidewall 703 and overall height.For example, the maximum outside diameter of sidewall 703 can be maximum outside diameter-about 23/8 inch (60.3mm) that approximates greatly the A19 incandescent lamp bulb, and the overall height of sidewall 703 can be the largest high degree – that approximates greatly the A19 incandescent lamp bulb about 31/2 inch (88.9mm).
In another embodiment of bulb sub-assembly 702, sidewall 703 can have oval-shaped shape, shown in Figure 81, and perhaps any other non-circular shape.This type of non-circular shape can be basically columniform or can towards lamp socket 710 assemble or bifurcated away from lamp socket 710.In addition, sidewall 703 shape of cross section that can have can comprise the plane and curved surface.In addition, sidewall 703 can have inhomogeneous shape of cross section so that shape of cross section changes along the longitudinal, and it be know and on sidewall 703 axles, will not exist.For example, shown in Figure 83, sidewall can have basically spiral-shaped, and the inner surface 714 of sidewall 703 can the first colour light emitting, and outer surface 720 can the second colour light emitting.In an alternative embodiment, spiral sidewall 703 can be formed by sheet, and this sheet has circular, avette or other are round-shaped, shown in Figure 110.Except in sidewall 703 difference in shape, the embodiment with the bulb sub-assembly 702 shown in Figure 65 is identical basically with 83 bulb sub-assembly 702 for Figure 81, and the bulb sub-assembly 702 of Figure 81 and 83 can comprise any or all parts of above-described embodiment.In above-mentioned any embodiment, the desirable any value of the maximum outside diameter of sidewall 703 and overall height.For example, the maximum outside diameter of sidewall 703 can be the maximum outer footpath – about 23/8 inch (60.3mm) that approximates greatly the A19 incandescent lamp bulb, and the overall height of sidewall 703 can be the largest high degree – that approximates greatly the A19 incandescent lamp bulb about 31/2 inch (88.9mm).
In another embodiment shown in Figure 82, can comprise in the bulb sub-assembly 702 more than a sidewall 703.For example, the cylindrical the first side wall 703a that has the first diameter can aforementioned manner be fixed on the lamp socket 710.Cylindrical the second sidewall 703b that has less than the Second bobbin diameter of the first diameter also can be coupled to lamp socket 710 by any known way, so that the axle of the first side wall 703 and the second sidewall 703 is co-axially aligned.Yet, but the first side wall 703a and the second sidewall 703b can have any suitable shape of cross section and axial dipole field separately.In addition, the second sidewall 703b is extend through the first side wall 703a in the axial direction, shown in Figure 82.Alternatively, the first side wall 703a and the second sidewall 703b can have any suitable height.For example, the maximum outside diameter of the first side wall 703a can be the maximum outer footpath – about 23/8 inch (60.3mm) that approximates greatly the A19 incandescent lamp bulb, and the overall height of the second sidewall 703b can be the largest high degree – that approximates greatly the A19 incandescent lamp bulb about 31/2 inch (88.9mm).In addition, one or more additional sidewall (not shown) also can be fixed to lamp socket 710, and one or more additional sidewall can have any suitable size, shape or relative direction.
Except sidewall 703 difference in shape, the bulb sub-assembly 702 of Figure 82 is can be basically identical with the embodiment of bulb sub-assembly 702 shown in Figure 65, and the bulb sub-assembly 702 of Figure 82 can comprise any or all suitable components or the function of above-described embodiment.For example, the outer surface 720a of the first side wall 703a can the first colour light emitting, and the outer surface 720b of the second sidewall 703b can the second colour light emitting.In addition, any or all sidewall 703a, 703b can have one or more windows 726, and described window has any suitable shape.As an additional example, reflecting surface 720 can be arranged in the inner surface of the second sidewall 703b, and the inner surface 714b of the second sidewall 703b can be luminous to be provided at the illumination that converges at any on the device 700.Although the inner surface 714b of the second sidewall 703b is luminous, the outer surface 720a of the first side wall 703a can be luminous and dimmed.
In another embodiment shown in Figure 85, bar 744 can extend upward from lamp socket 710, and bar 744 can form the single part of at least a portion with lamp socket 710, perhaps can be fixed to lamp socket 710.A plurality of excellent 746 can radially extend with support cylinder shape sidewall 503 from bar 744, and the electrical connection that lamp socket 710 is coupled to sidewall 703 can be extended at bar 744 and at least one excellent inside.Sidewall 503 can have any shape, but not single cylinder side wall 703, and two or more sidewalls 503 can use shown in Figure 82.Also can be with above-mentioned any function and parts adding in the bulb sub-assembly 702 shown in Figure 85.In addition, shown in Figure 86, hinge 748 can be along the length setting of the bar 744 that is close to lamp socket 710, so that bar 744 bottoms can pivot with respect to bar 744 tops.
In another embodiment, sidewall 703 can change into basically frusto-conical shape from cylinder form basically, and vice versa.For example, in the embodiment shown in Figure 87 A and 87B, half-cylindrical the first side wall 703a can be coupled to half-cylindrical the second sidewall 703b around the hinge 750 of a pair of opposite setting, so that the first side wall 703a and the second sidewall 703b have basically cylinder form.Hinge 750 can be fixed to cylinder side wall part 703c with the first side wall 703a and the second sidewall 703b, and the internal diameter of the first side wall 703a and the second sidewall 703b can be slightly larger than the external diameter of cylinder side wall part 703c.So construct, each Wei Rao the hinge 750 among the first side wall 703a and the second sidewall 703b pivots, so that the first side wall 703a and the second sidewall 703b have basically frusto-conical shape.Hinge 750 can center on the first side wall 703a and the second sidewall 703b and cylindrical part 703c and firmly fix, so that friction keeps the first side wall 703a and the second sidewall 703b at desired locations.Hinge also can form one or more electrical connections between the first side wall 703a and the second sidewall 703b.
Still referring to Figure 87 A and 87B, the first side wall 703a and the second sidewall 703b can any mode known in the art be switched to the position of expectation.For example, the first side wall 703a and the second sidewall 703b can manually be switched to desired locations.Alternatively, the mechanical couplings between lamp socket 710 and the first side wall 703a and the second sidewall 703b can be pivoted to the first side wall 703a and the second sidewall 703b in the desired locations.For example, but rotating ring (not shown) screw thread couple is to lamp socket 710, so that ring causes the axial displacement that encircles with respect to the rotation of lamp socket 710.Particularly, among the first side wall 703a and the second sidewall 703b each is fixed to the ring of the position between hinge 750, and ring causes the first side wall 703a that is fixed on the ring and the up or down displacement of point of the second sidewall 703b with respect to the rotation of lamp socket 710, thereby the first side wall 703a and the second sidewall 703b are pivoted in the desired locations.But the described ring of manual rotation, perhaps can by be arranged within the lamp socket 710 or outside the motor rotation.Can pass through switch, timer, optical sensor, acoustic control or trigger motor by any method known in the art.
Although the first side wall 703a and the second sidewall 703b discuss hereinbefore, can use the sidewall of any amount or shape.For example, in the embodiment shown in Figure 88, can use the first side wall 703a, the second sidewall 703b and the 3rd sidewall 703c.In addition, being used for the first side wall 703a and the second sidewall 703b(or any additional sidewall) any device of becoming frusto-conical shape basically from cylinder form basically can be merged enters device 500.For example, elongated shank (not shown) is extensible by sidewall 703 inside, and firm excellent (not shown) can be pivotally fixed to shank and each sidewall, so that when shank generation axial displacement (manually or pass through other devices), described rod can be shifted sidewall or move to onto the position of expectation.Also imagine from central shaft and radially extend Extensible telescopic actuator with pivotal side walls 703, they are for example with respect to the lever of lamp socket 710 pivotal side walls 703.
In the embodiment shown in Figure 89 A and 89B, light-emitting component 752 is arranged on the far-end of elongate rod 754.Light-emitting component 752 can be plane basically, and the overall shape that can have dish type.For example, the described dish diameter that can have is greater than the normal diameter of conventional recessed down light.That is, if recessed down light has the diameter of 5 inches (127mm), then light-emitting component 752 can have the diameter of 7 inches (177.8mm).In certain embodiments, the light-emitting component diameter (or full-size) that can have is about 3cm about 50cm extremely; Alternatively, about 5cm is to about 40cm; Alternatively, about 10cm is to about 30cm; Alternatively, about 15cm is to about 30cm; Alternatively, about 15cm to 50cm; Alternatively, about 15cm to 25cm, alternatively, about 20cm to 40cm, alternatively, about 20cm to 50cm; Alternatively, about 25cm to 50cm.Light-emitting component can have two light-emitting areas.Light-emitting area generally can be the plane, can be some combinations protruding, recessed or plane, protruding and recessed.In the light-emitting area each can have the surface area similar or identical with another.Particularly, each light-emitting area surf zone that can have is about 7cm 2To about 2000cm 2Alternatively, about 20cm 2To about 1300cm 2Alternatively, about 75cm 2To about 700cm 2Alternatively, about 175cm 2To about 700cm 2Alternatively, about 175cm 2To about 2000cm 2Alternatively, about 175cm 2To about 500cm 2Alternatively, about 300cm 2To about 1300cm 2Alternatively, about 300cm 2To about 2000cm 2Alternatively, about 500cm 2To 2000cm 2Yet light-emitting component 752 can have any size, shape or the combination of the shape that is suitable for expecting using.For example, light-emitting component 752 can have square but not dish type.Light-emitting component 752 can have top 756, bottom 758 and circumferential side portion 760, and in these surfaces any one can be luminous.
Still referring to Figure 89 A and 89B, bar 754 can extend from lamp socket 710, and lamp socket 710 and base assembly 735 global formations.Bar 754 can comprise the first bar part 762a that extends from lamp socket 710, and the second bar part 762b that extends from the first bar part 762a.More specifically, the second bar part 762b can extend from the first bar part 762a intussusception, so that the overall axial length of bar 754 can be is adjustable.For example, the maximum overall axial length of bar 754 can be greater than the degree of depth of conventional recessed down light.For example, recessed down light can have about 7cm to the degree of depth of about 8cm, and bar can have about 7cm to the axial length of about 30cm; Alternatively, recessed down light can have the degree of depth of about 10cm, and bar can have about 10cm to the axial length of about 35cm; Alternatively, recessed down light can have about 12cm to the degree of depth of about 13cm, and bar can have about 12cm to the axial length of about 40cm; Alternatively, recessed down light can have the degree of depth of about 15cm, and bar can have about 15cm to the axial length of about 45cm.The total length that bar that under any circumstance, no matter fix or tensile can have is the total length of about 5cm to about 100cm; Alternatively, about 5cm is to about 50cm; Alternatively, about 5cm is to about 40cm; Alternatively, about 5cm is to about 75cm; Alternatively, about 15cm is to about 100cm; Alternatively, about 15cm is to about 75cm; Alternatively, about 15cm is to about 50cm; Alternatively, about 15cm is to about 35cm; Alternatively, about 25cm is to about 100cm; Alternatively, about 25cm to 50cm; Alternatively, about 25cm is to about 40cm.In addition, the second bar part 762b can rotate with respect to the first bar part 762a.This relative rotation (or length adjustment) can trigger or regulate the function of this device, for example dims or lighten the illumination of top 756, bottom 758 or the sidepiece 760 of light-emitting component 752, and makes in the part 756,758,760 any luminous or not luminous.In certain embodiments, the first bar part is with respect to rotatable nearly 360 degree of the second bar part; Reach alternatively 330 degree; Reach alternatively 300 degree; Reach alternatively 270 degree; Reach alternatively 240 degree; Reach alternatively 210 degree; Reach alternatively 180 degree; Reach alternatively 150 degree; Reach alternatively 120 degree; Reach alternatively 90 degree; Reach alternatively 60 degree; Reach alternatively 30 degree.Yet bar 754 can be rigidity, nonfunctional ability.Hinge 764 can be coupled to light-emitting component 752 the second bar part 762b, thereby allows light-emitting component 752 to pivot with respect to bar 754.Yet light-emitting component 752 can be fixed to the second bar part 762b rigidly, and described hinge can be arranged on any desired locations place along bar 754.Alternatively, can not comprise hinge, and light-emitting component 752 can not pivot with respect to bar 754.Be in operation, base assembly 735 can be inserted in the socket in the built-in lighting chamber, and light-emitting component 752 is rotatable, so that luminous bottom 758 provides the directional lighting to for example desired regions.
In an embodiment shown in Figure 103 A and 103B, light-emitting component 752 can have a plurality of grooves 874, and they extend to bottom 758 from the top 756 of light-emitting component 752.Groove 874 can be arranged on the position of any expectation.For example, shown in Figure 103 A and 103B, the center of groove around dish type light-emitting component 752 can be arranged concentrically.The end of locked groove can extend up to the central cross part 876 of dish, and the lateral part 876 of dish can be extended along the axle 878 that passes disk center.A plurality of locked grooves 876 can limit the replaceable part 880 of a plurality of arcs, and replaceable part 880 can pivot at the terminal junction point of replaceable part 880 and lateral part 876.Similarly, in the first configuration shown in Figure 103 A, replaceable part 880 can be basically coplanar.Yet one or more replaceable parts 80 can pivot with respect to lateral part 876.More specifically, shown in Figure 145 B, pass the first replaceable part 880 top surface the plane can with respect to the plane of passing lateral part 876 with the first angle (for example between 0 the degree and 90 the degree between) arrange, and pass the second replaceable part 880 top surface the plane can with respect to the plane of passing lateral part 876 with the second angle (for example between 0 the degree and 90 the degree between) arrange.Light-emitting component 752 can comprise storage medium, and it allows replaceable part to remain on desired locations when replaced with respect to the central cross part.
In an alternative embodiment shown in Figure 104 A and 104B, dish type light-emitting component 752 can have single groove 874, and described single groove forms the pericentral spiral pattern that is arranged on light-emitting component 752.Like this structure is when bulb sub-assembly 702 is oriented so that bar 754 when extending upward, comprises that the material weight of light-emitting component 752 causes that light-emitting component 752 is around bar 754 to bottom offset, so that light-emitting component 752 is around bar 754 shown in Figure 104 B.Alternatively, when bulb sub-assembly 702 is oriented so that bar 754 during to downward-extension (for example when base assembly 735 is arranged in the built-in lighting capacitor), comprises that the material weight of light-emitting component 752 causes that light-emitting component 752 is from bar 754 to bottom offset shown in Figure 104 A.
In another the alternative embodiment shown in Figure 105 A and 105B, horizon bar 882 can be coupled to the far-end of the bar 754 of bulb sub-assembly 702.A plurality of arc light-emitting components 752 can rotatably be coupled to rod 882.More specifically, the first end of each light-emitting component 752 is the first end of pitman 882 rotatably, and the second end of light-emitting component 752 the second end of pitman 882 rotatably.So construct, any or all arc light-emitting component 752 can rotate to desired locations around rod 882.In addition, can position with size in the arc light-emitting component 752 each and set to allow light-emitting component 752 to remain on the intussusception position, shown in Figure 105 B.
In other embodiments, the light-emitting component of bulb sub-assembly can be one or more flexible light belt sub-assemblies 884.For example, in the embodiment of the bulb sub-assembly shown in Figure 106, bulb sub-assembly 702 can comprise the first light belt sub-assembly 884a and the second light belt sub-assembly 884b.Each light belt sub-assembly 884a, 884b can have and comprise aforesaid flexible luminescent material light belt 886.
The light belt 886 of each light belt sub-assembly 884a, 884b can have and is suitable for expecting any shape of using.For example, shown in Figure 148 and 149, elongated, band sample shape that the first light belt 886a and the second light belt 886b can have separately.More specifically, each be subject to straight line the first longitudinal edge 888 among the first light belt 886a and the second light belt 886b and the part of straight line the second longitudinal edge 890 limit, and described the second longitudinal edge 890 is parallel with the first longitudinal edge 888 and be offset from the first longitudinal edge 888.Lateral separation (that is, and perpendicular to the distance of the longitudinal axis of each light belt 886, or width) can have any suitable value.For example, lateral separation can be in the first width range, and this scope is extremely about 5mm of about 50mm, and perhaps 40mm is to about 10mm, and perhaps 30mm is to about 10mm, and perhaps 25mm is to about 5mm, and perhaps about 20mm is to about 10mm, perhaps their combination.More specifically, described distance can be about 20mm.Alternatively, lateral separation can be at about 10mm to the second width range of about 3mm.Select as additional another, lateral separation can be at about 50mm to the 3rd width range of about 25mm.In additional embodiment, it is (perhaps linear that the first longitudinal edge 888 and the second longitudinal edge 890 can be is nonlinear, but nonparallel), and edge 888,890 can be assembled or bifurcated, perhaps can be crooked, part is crooked, and is perhaps angled with respect to one or more parts at edge.Person of skill in the art will appreciate that have curved edge or for example the lateral separation of the embodiment of jagged edge will be the distance between the datum line of dividing (or basically dividing equally) curved edge 888 or jagged edge 890 equally.In other embodiments, can pre-determine the lateral separation of each light belt 884, perhaps can be determined by the user.More specifically, single light belt 884 can shift out from main sheet, and main sheet can punch to allow the user to select the desired width of each light belt 884 in the vertical.
The elongated light belt 886 of light belt sub-assembly 884 can have first end 892 and the second end 894 relative with first end 892.In certain embodiments, the light belt sub-assembly can have the conductive layer of exposure at each place of first end 892 and the second end 894.In other embodiments, light belt sub-assembly 884 also can comprise connector assembly 896, and described connector assembly can be arranged on one or two place in first end 892 and the second end 894 or one or two setting in contiguous first end 892 and the second end 894.Each all can extend to the second end 894 from the first end 892 of light belt 884 the first longitudinal edge 888 and the second longitudinal edge 890.Connector assembly 896 can comprise base part 898, and base part 898 can be longitudinal axis setting elongated and that be substantially perpendicular to light belt.For example, base part 898 can be fixed to by any method known in the art first end 892 and/or the second end 894 of light belt 886, for example by mechanical couplings, by interference fit, for example be fixed around the multi-part base part sub-assembly of light belt 886 first ends 892 and/or the second end 894 by ultra-sonic welded or by buckle.Connector assembly 896 can be connected to light belt 884 during fabrication, if perhaps the width of each light belt 884 can be determined by the user, can be fixed to end 892,894 by the user.
Connector assembly 896 also can comprise one or more contact elements 900, described contact element is suitable for light belt 886 is electrically coupled to power supply, and contact element 900 can comprise the sub-assembly of any parts or any parts, and they can be electrically coupled to power supply with light belt 886.Each contact element 900 can be coupled to light belt 886 by base part 898.For example, base part 898 can be fixed to first end 892 and/or the second end 894 of light belt 886, and one or more contact elements 900 can be coupled to base part 898(or be kept by base part 898) so that one or more contact element 900 electric coupling light belts 886.In alternative embodiment, but the first end 892 of one or more contact element 900 direct-coupling light belts 886 and/or the second end 894.Shown in Figure 149 and 150, connector assembly 896 can comprise single contact element 900, and contact element 900 can adopt the shape of elongated board 901.In an alternative embodiment, each contact element 900 can comprise one or more cannon plugs.Any embodiment of elongated board 901(or contact element 900) can carry out size and set to access the top 735a of base assembly 735 for example at base assembly 735() in the corresponding groove 902 that forms.One or more contact elements 900 can be coupled to the top 735a of base assembly 735 removedly.For example, one or more grooves 902 can form in the 735a of the top of base assembly 735, and more specifically, one or more grooves 902 can be in the top surface 905 of the top of base assembly 735 735a or its form.Yet one or more grooves can form at any desired locations of base assembly 735, and for example the outer cylinder surface at the top of base assembly 735 735a forms.One or more contact elements 900 can be suitable for accessing removedly in one or more grooves 902.One or more contacts 904 can be arranged in the groove 902 such as spring contact, and when elongated board 901 is arranged in the groove 902, and one or more contacts 904 can be suitable for keeping the physical contact with elongated board 901.Be arranged on one or more contacts 904 electric coupling power supplys in the groove 902 with to light belt 886 power supply.Elongated board 901 can have the pawl component (not shown), and it can be positioned on the elongated board, so that when the correct insertion groove 902 of connector assembly 896 quilts, the contact 904 engagement pawl parts in groove 902.Connector assembly 896 and/or base assembly 735 can comprise one or more parts (not shown), thereby described parts guarantee that contact element is inserted into groove 902(with the correct direction with respect to the contact 904 in the groove 902 and for example remains on contact in the groove and the correct polarity between the elongated board).In addition, connector assembly 896 and/or base assembly 735 can comprise one or more parts (not shown), described parts provide dismountable attachment, and these attachment prevent that connector assembly from being removed unintentionally from the groove 902 of base assembly 735.
As mentioned above, each in the light belt 886 of one or more light belt sub-assemblies 884 can be flexible, and is arranged on each the connector assembly 896 of one or two end in the light belt sub-assembly 884 base assembly 735 that can be coupled removedly.Therefore, the configuration of the customizable bulb sub-assembly 702 of user.For example, can in base assembly 735, provide a plurality of grooves 902, and the user can insert the first contact element 900 of the first light belt sub-assembly 884a the first groove 902 of expectation and the second groove 902 that the second contact element 900 insertions of the first light belt sub-assembly 884a are expected.The user also can insert the first contact element 900 of the second light belt sub-assembly 884b the three-flute 902 of expectation and the 4th groove 902 that the second contact element 900 insertions of the second light belt sub-assembly 884b are expected.If necessary, for example, then the user can shift out the first contact element 900 of the first light belt sub-assembly 884a and the first contact element 900 of the first light belt sub-assembly 884a is inserted the 5th groove 902 from the first groove 902.By being provided with a plurality of grooves 902, the user can customize one or more light belt sub-assemblies 884 with respect to configuration or the position of base assembly 735, thus allow that the user creates aesthetic pleasant with Extraordinary lighting arrangements mode.Person of skill in the art will appreciate that light belt sub-assembly 884 can form any a plurality of shape, for example circular or have a shape of one or more sharp edges.
Light belt or a plurality of light belt 886 can have any suitable length.For example, shown in Figure 148, the first light belt 886a can have the first length and the second light belt 886b can have the second length less than the first length.In certain embodiments, light belt or a plurality of light belt 886 can have the length of about 20cm; Be alternatively about 15cm; Be alternatively about 10cm; Be alternatively about 25cm; Be alternatively about 30cm.Similarly, in the embodiment that uses two or more light belts 886, the length of light belt 886 can differ about 1cm; About 2cm alternatively; About 3cm alternatively; About 4cm alternatively; About 5cm alternatively; About 6cm alternatively; About 7cm alternatively.In certain embodiments, the Length Ratio of any two light belts will be between about 1:1 and about 1:2; Alternatively between about 1: 1 and 1: 1.5; Alternatively between about 1:1 and 1:3; Alternatively between about 1:1 and 1:4; Alternatively between about 1:1 and 1:5.Although not shown, the light belt of three, four, five or more different sizes may be arranged.The first contact element and the second contact element 900 of the second light belt sub-assembly 884b can be inserted the first pair of groove 902 that is formed at base assembly 735, so that light belt 886b is when have circular arch (or ring) shape when the place ahead is watched.More specifically, light belt 886b can have the general shape of the cross section of conventional bulb (for example A19 incandescent lamp bulb).In addition, the first contact element of the first light belt sub-assembly 886a and the second contact element 900 can be inserted in second pair of groove 902 being arranged to first pair of groove 902 quadrature, and the light belt 886a of the first light belt sub-assembly 884a can adopt circular arch (or ring) shape when watch from the place ahead.Be similar to the second light belt 886b, the first light belt 886a can have the general shape of the cross section of conventional bulb (for example A19 incandescent lamp bulb).Because the first light belt sub-assembly 884a has the larger length than the second light belt sub-assembly 884b, the top circular of the second light belt 886b partly is arranged on the below of the top circular part of the first light belt 886b.Because the first light belt sub-assembly 884a is configured to and the second light belt sub-assembly 884b quadrature, so the overall shape of the first light belt sub-assembly 884a and the second light belt sub-assembly 884b is similar to the overall shape of the conventional bulb that stylizes.
Replacement has the first light belt 886a of the first length and the second light belt 886b with second length, and single light belt sub-assembly 884 can be coupled to base assembly 735, shown in Figure 154 A and 154B.Single light belt sub-assembly 884 can have connector assembly 896, and the first end 892 of its contiguous light belt 886 and the second end 894 arrange, and each connector assembly 896 can access the suitable groove 902 that is formed at base assembly 735 in the above described manner.The light belt 886 of light belt sub-assembly 884 can adopt circular arch (or ring) shape when watching from the place ahead, and light belt 886 can have the general shape of the cross section of conventional bulb (for example A19 incandescent lamp bulb).Similarly, the size of light belt sub-assembly 884 can be equivalent to the cross sectional dimensions of conventional bulb such as A19 incandescent lamp bulb.As an object lesson, the height of circular arch (or ring) can be equivalent to the height of A19 incandescent lamp bulb, and this highly can be about 31/2 inch (88.9mm).For example can with highly be defined as the level of the highest part of arch (or ring) and base assembly 735 or substantially horizontal top surface between vertical range.Yet, highly can be the distance between any suitable part of the top surface of the highest part of arch (or ring) and base assembly 735, for example part limits one edge in a plurality of grooves 902 of the top surface that is formed at base assembly 735.As another example, the maximum outside diameter of circular arch (or ring) can be equivalent to the maximum outside diameter of A19 incandescent lamp bulb, and this type of diameter can be about 23/8 inch (60.3mm).
Height and the desirable any suitable value of maximum outside diameter value of circular arch (or ring), but not be equivalent to those height and maximum outside diameter value of conventional bulb such as A19 incandescent lamp bulb.For example, the height of circular arch (or ring) can be the height less than (or significantly less than) A19 incandescent lamp bulb, shown in Figure 155 A and 155B.More specifically, described height can be about 1cm to about 20cm; Alternatively, about 1cm is to about 15cm; Alternatively, about 1cm is to about 10cm; Alternatively, about 3cm is to about 20cm; Alternatively, about 3cm is to about 15cm; Alternatively, about 3cm is to about 10cm; Alternatively, about 5cm is to about 20cm; Alternatively, about 5cm is to about 15cm; Alternatively, about 5cm is to about 10cm.Similarly, also shown in Figure 155 A and 155B, the Breadth Maximum of circular arch (or ring) can be greater than or less than the Breadth Maximum of A19 incandescent lamp bulb, and described Breadth Maximum for example can keep or can not keep the general ratio of A19 incandescent lamp bulb.Particularly, in certain embodiments, the Breadth Maximum of circular arch (for example in the ring that forms by light belt 886) can be about 2cm to about 20cm; Select as another kind, about 2cm is to about 15cm; Select about 2cm to 10cm as another kind; Select about 2cm to 5cm as another kind; Select as another kind, about 4cm is to about 20cm; Select as another kind, about 4cm is to about 15cm; Select as another kind, about 4cm is to about 10cm.Similarly, " (38.1mm), then Breadth Maximum will be for about 1 " (25.4mm) if the height of circular arch (or ring) is 1.5.That is, the width of light belt 886 when forming ring and/or arch: aspect ratio can be about 1:1 to about 1:3; Select as another kind, about 1:1 is to about 1:2; Select as another kind, about 1:1 is to about 3:4.
In additional embodiment, the height of circular arch (or ring) can be greater than the height of (or significantly greater than) A19 incandescent lamp bulb, shown in Figure 156 A and 156B.More specifically, described height for example can be about 5 inches (127mm), 6 " (152.4mm) or 7 " (177.8mm).Similarly, also shown in Figure 156 A and 156B, the Breadth Maximum of circular arch (or ring) can be significantly greater than the Breadth Maximum of A19 incandescent lamp bulb, and described Breadth Maximum for example can keep the general ratio of A19 incandescent lamp bulb.Similarly, " (177.8mm), then Breadth Maximum will be for about 4.75 " (120.6mm) if the height of circular arch (or ring) is 7.
In other embodiments, the first light belt 886a can have the first length and the second light belt 886b can have the second length less than the first length, as mentioned above, and referring to Figure 148.Yet, shown in Figure 157 A and 157B, the height of the circular arch of the first light belt 886a (or ring) can be greater than the height of (or significantly greater than) A19 incandescent lamp bulb, and the height of the circular arch of described the second light belt 886b (or ring) can be significantly less than the height of the circular arch (or ring) of the first light belt 886a.For example the height of the circular arch of the second light belt 886b (or ring) can equal or the height of remarkable circular arch less than the A19 incandescent lamp bulb (or ring).For example the height of the circular arch of the first light belt 886a (or ring) can be about 7, and " (177.8mm), and for example the height of the circular arch of the second light belt 886b (or ring) can be about 1 " (25.4mm).Alternatively, the height of the circular arch of the second light belt 886b (or ring) can be slightly less than the height of the circular arch (or ring) of the first light belt 886a.In an additional embodiment, the height of the height of the circular arch of the first light belt 886a (or ring) and the circular arch of the second light belt 886b (or ring) can be significantly less than the height of A19 incandescent lamp bulb.Person of skill in the art will appreciate that having different size can be coupled to base assembly 735 to simulate the shape of conventional bulb (for example A19 incandescent lamp bulb) with the different mutually any amount of additional band sub-assemblies 884 of orientation.
In above-mentioned (or following) any embodiment, the width of each in the light belt 886 can be different.For example, in the embodiment shown in Figure 157 A and 157B, the first light belt 886a and the second light belt 886b can have lateral separation in the first scope of lateral separation (that is, perpendicular to the distance of the longitudinal axis of each light belt 886, or width), and two lateral separations can equate.Yet the first light belt 886a can have different transverse widths with the second light belt 886b, and in the lateral separation each can be selected from the first scope, the second scope and the 3rd scope as mentioned above.In addition, surpass two light belts 886 if use, then the transverse width of any light belt 886 can be selected from the first scope, the second scope and the 3rd scope.For example, maybe can be coupled to described base assembly 735 if ten light belts 886 are coupled to described base assembly 735(), then all ten light belts 886 can have equal lateral separation, and described lateral separation can be in the second scope.The length that person of skill in the art will appreciate that all light belts can equate that perhaps the length of any or all light belt can be different.
As mentioned above, the light belt 886 of light belt sub-assembly 884 can be flexibility.More specifically, light belt 886 can have any suitable flexural modulus according to the material for the manufacture of described material.In addition, regardless of the flexural modulus of material, described material can have least radius, it can be in the situation of the electricity that does not jeopardize described structure and/or physical integrity (such as cause that material layer fractures, short circuit electricity assembly etc. not) be curved to this radius.As used herein, this least radius is called " minimum bending radius." minimum bending radius can be according to application-specific and different with flexural modulus, this depends on the expectation pliability of baseplate material and the material of use.For example, the light belt 886 of use first substrate material can have the minimum bending radius between 4mm and 25mm, and uses the dish-type light-emitting component 782 of second substrate material can have significantly greater than about 100mm to 200mm or larger minimum bending radius.Therefore, light belt 886 has about 10mm to the minimum bending radius of about 20cm in certain embodiments; Select as another kind, about 10mm is to about 10cm; Select as another kind, about 10mm is to about 5cm; Select as another kind, about 3cm is to about 5cm; Select as another kind, about 3cm is to about 10cm; Select as another kind, about 3cm is to about 20cm.Alternatively, sheet material 788 can be relative stiffness, for example have about 15cm than the macrobending radius.If be used for a certain purposes more than a kind of light belt sub-assembly 884, the minimum bending radius that person of skill in the art will appreciate that all light belts 886 can be equal, and perhaps the minimum bending radius of any or all light belt 886 can be different.
Because the pliability of light belt 886, the first connector assembly 896 can rotate to twine described light belt with respect to the second connector assembly 896.For example shown in Figure 151, can be with the first contact element and the second contact element 900 insertion grooves 902 of single light belt sub-assembly, this groove is with between 145 degree and 45 degree, perhaps from 100 degree to 45 degree, perhaps from 100 degree to 145 degree, perhaps spend to 100 degree the perhaps angle settings of about 90 degree, thereby the elongated arc that formation is extended from base assembly 735 from 80.Alternatively, shown in Figure 152 A, 152B, can twine the light belt 886 of single light belt sub-assembly 884 to form a plurality of rings.In addition, shown in Figure 153 A, 153B, can twine the configuration of expecting with formation more than a kind of light belt 886 of light belt sub-assembly 884.
In the light belt 886 of light belt sub-assembly 884 each can be luminous in any desired way.For example, the whole front surface of any or all light belt 886 can be luminous.Alternatively, only the part front surface can be luminous.In other embodiments, the part front surface is can selectivity luminous so that the whole front surface of light belt 886 can part front surface luminous or only light belt can be luminous.Similarly, the whole rear surface of any or all light belt 886 can be luminous.Alternatively, only the part rear surface can be luminous, and perhaps the part back surfaces is can selectivity luminous.Selectivity is luminous can be controlled by any method, comprises those aforesaid methods.In some cases, selectivity is luminous can be undertaken by light belt (that is, the first light belt can be luminous, and the second light belt does not keep luminous etc.).
In another embodiment of the lighting device 700 shown in Figure 90 A and 90B, flexible cord 766 can extend from lamp socket 710, and lamp socket 710 is by base assembly 735 global formations.Hub 768 can be arranged online 766 far-end, and a plurality of support bar 770 can extend radially from hub 768.Light-emitting component 772 can support by a plurality of support bars 770, and support bar 770, hub 768 and line 766 can provide the device that is electrically connected base assembly 735 and light-emitting component 772.Light-emitting component 772 can have any shape, and any inner surface of light-emitting component 772 and/or outer surface can be luminous.For example, shown in Figure 90 A and 90B, light-emitting component 772 can comprise a plurality of polyhedral surfaces 774, and it forms general cylindrical shape, and all (or some) polyhedral surface 774 can be luminous.Another example is shown in Figure 90 C, and wherein light-emitting component 772 comprises a plurality of cylinders 776.Hub 768 can have one and allow the interface that the user selects or regulatory function arranges, and for example only dims or open the luminous of inner polyhedral surface 774.
In another embodiment shown in Figure 93 A, 93B, 93C and 93D, sheet material sub-assembly 787 can comprise sheet material 788, and two faces of sheet material 788 all can be luminous.Sheet material 788 can be flexible, and described sheet material can have any suitable minimum bending radius that is suitable for given application.For example, sheet material 788 can have between 1 " (25.4mm) and 6 " minimum bending radius between (152.4mm).Alternatively, sheet material 788 can be rigidity basically, has for example about 24 " larger bending radius (60.96cm).Alternatively, sheet material 788 can have aforementioned any minimum bending radius or minimum bending radius scope.Sheet material 788 can have diamond shape and can be plane basically, shown in Figure 93 A, 93B, 93C.Yet sheet material 788 can have any shape or combination of shapes, for example the contour shape shown in Figure 93 D.Randomly, sheet material 788 can comprise pattern or image or other patterns or the modification through printing.Power line 790 can be electrically coupled to sheet material 788, and power line 790 also can be electrically coupled to power interface 792, and described power interface can be coupled to power supply, standard wall outlet for example, thus be provided for the luminous electric power of sheet material 788.Yet, power interface 792 can with any power interface, for example standard lamp socket or car light socket.Power line 790 can forever be coupled to sheet material 788 or it removably can be coupled.Functional interface 794 can be electrically coupled to sheet material 788 and power interface 792, and functional interface 794 can comprise the interface for control sheet material 788 functions, for example mains switch, dimmer or any other suitable function.Sheet material sub-assembly 787 can comprise at least two coupling elements 796 so that the first of sheet material 788 is connected to the second portion of described sheet material.For example, the first coupling element can be coupled to the first of described sheet material and the second portion that the second coupling element can be coupled to described sheet material, and the first coupling element can be suitable for engaging described the second coupling element removably the first of described sheet material is fixed to the second portion of described sheet material.
The coupling element 796 of embodiment shown in Figure 93 A, 93B, 93C and 93D can be any mechanism known in the art, at least two parts of its sheet material 788 that can removably be coupled, for example hook-loop fastener or magnetic clasp part.As an additional example, coupling element 796 can be arranged on each place in four angles of the rhombus sheet material shown in Figure 93 A.Coupling element 796 can comprise prodger 798, and it can removably be fixed in the shrinkage pool 800 to guarantee sheet material as intended shape, shown in Figure 93 C.Can comprise the coupling element 796 more than a type, for example a plurality of slits 802 to interior orientation, and the marginal portion of sheet material can be inserted into one of them slit 802 so that sheet material is fixed on desired locations, shown in Figure 93 B.Expection sheet material sub-assembly 787 suspendeds on the wall, be suspended on the eminence power supply, hang on the ceiling or be arranged on the flat surfaces.
In another embodiment shown in Figure 94 A to 94E, device 700 can have roughly elongated shape.Particularly, pedestal 804 can extend at basic longitudinal direction.Pedestal 804 can have any suitable length being used for application-specific, and the size of pedestal can be configured to approximate greatly conventional luminesent lamp clamp so that install 700 total length.For example, the size of pedestal 804 can be configured to to install 700 total length be 12 inches (304.8mm), 24 inches (609.6mm), 36 inches (914.4mm) or 48 inches (1219.2mm).Pedestal 804 can have any shape that is suitable for application-specific.For example, shown in Figure 94 A, pedestal 804 can comprise the first wall 806 and the second wall 808, and the first wall 806 and the second wall 808 can be symmetrically formed around the cell wall 810 of center arrangement, so that pedestal 804 has wedge sample shape.Pedestal 804 can be made the parts of global formation, perhaps can be formed by two or more assembled.Light-emitting component 812 can be coupled to pedestal 804, and light-emitting component 812 can have any shape or the size that is suitable for application-specific.For example, light-emitting component 812 can be plane basically, and shown in Figure 94 A and 94B, and light-emitting component 812 can extend along the total length of pedestal 804 and along cell wall 810.Yet light-emitting component 812 for example can comprise the parts that separate along the length of pedestal 804.Any part of light-emitting component 812 comprises whole light-emitting component 812, can be luminous, and this describes in detail hereinafter.
Still referring to Figure 94 A to 94E, covering 814 can be coupled to pedestal 804 by any device known in the art, comprises fixed coupling or removable coupling.For example, the top of covering 814 and bottom margin can slip in the groove of the end that is formed at respectively the first wall 806 and the second wall 808 separately.When being fixed to pedestal 804, covering 814 can have any shape of cross section, and is for example protruding, recessed or smooth.In addition, covering 814 can comprise single global facility, perhaps can comprise a plurality of parts of common formation covering 814, and for example parts of covering 814 can be protrudingly, and second parts can be recessed.Covering 814 can be basically frosted or transparent, and covering 814 also can have superficial makings or be non-veining.In addition, covering 814 can have any suitable color.In an alternative embodiment, covering 814 can replace light-emitting component 812 luminous.
Still referring to Figure 94 A to 94E, capping 816 can be fixed to each end of pedestal 804.Each capping 816 can have any shape, and capping 816 for example can have basically identical with the shape of cross section of covering 814/ pedestal 804 sub-assemblies shape of cross section.Each capping 816 may be fixed to by any mode known in the art each end of pedestal 804, for example by inserted sheet/groove sub-assembly or interference fit.At least one be coupled to power interface 792 in the capping 816.For example, flexible cord 818 can extend to power interface 792 from capping 816, so that when capping 816 was fixed to pedestal 804, light-emitting component 812(or covering 814 were if covering 814 can be luminous) be electrically coupled to power interface 792.Functional interface 794 can be electrically coupled to light-emitting component 812(or covering 814, if covering 814 can be luminous) and power interface 792, and functional interface 794 can comprise for control light-emitting component 812(or covering 814, if covering 814 can be luminous) the interface of function, for example mains switch, dimmer or any other suitable function.Functional interface 794 can be arranged on any correct position place of device 700, comprise the assembly that is coupled on the power line 818.Alternatively, functional interface 794 can be with capping 816 or power interface 792 global formations.
Still referring to Figure 94 A to 94E, two or more covering 814/ pedestal 804 sub-assemblies can be fixed to together to form many units sub-assembly 822.Because the shape of single covering 814 and pedestal 804 can change, many units sub-assembly 822 can have the combination of any shape of cross section or various shape.For example, shown in Figure 94 C and 94E, many units sub-assembly 822 can have basically cylindrical shape.Alternatively, many units sub-assembly 822 can have the semicylinder shape, shown in Figure 94 D.Can covering 814/ pedestal 804 sub-assemblies be secured together by any device known in the art, for example by using inserted sheet/groove configuration or being fixed by magnetic shaft coupling.For example, the elongated inserted sheet 820 of a part can be inserted in the groove, described groove forms by the cell wall 810 formation semicylinders of the pedestal 804 of each in two adjacent covering 814/ pedestal 804 sub-assemblies, perhaps a part of elongated inserted sheet 820 can be inserted in the groove, and described groove forms by the cell wall 810 formation cylinders of the pedestal 804 of each in four coverings, 814/ pedestal, 804 sub-assemblies.If many units sub-assembly 822 is suspended on the power line 818, power line 818 can be coupled to hub, and described hub can be coupled to be used to one or whole minimum capping 816 supporting many units sub-assembly 822.
In another the elongated embodiment shown in Figure 95, fluorescence replaces sub-assembly 823 can have conventional tubular fluorescent lamp bubble shape, can be inserted into conventional cast fluorescence socket to replace conventional tubular fluorescent lamp bubble so that fluorescence replaces sub-assembly 823.Particularly, the light-emitting component 812 of fluorescence replacement sub-assembly 823 can be luminous, and light-emitting component 812 can be basically columniform.Light-emitting component 812 can be arranged in the rigidity exterior circular column 824, and exterior circular column 824 can be made by any suitable material, for example plastics or glass.As shown in the figure, light-emitting component 812 and exterior circular column 824 can be cylinder form, perhaps can have the combination of any shape of cross section or various shape.In addition, if the moment of torsion that the adequate rigidity of light-emitting component 812 applies when standing to install then can not use exterior circular column 824.Capping 826 can be arranged on the two ends of light-emitting component 812.Capping 826 can have any suitable shape, and can be cylindrical and have the external diameter of the external diameter that equals substantially exterior circular column 824.Can capping 826 be rigidly fixed to exterior circular column 824(or be fixed to light-emitting component 812 by any method known in the art, if do not use exterior circular column 824), for example by screw thread couple or inserted sheet/groove locking.One or more pins 828 can be from capping 826 each begin to extend, and sell 828 and can jointly form any in a plurality of conventional configurations, described configuration is used for coupling conventional fluorescent lamp bulb and socket.Pin 828 can be electrically coupled to power interface 792, and power interface 792 can be electrically coupled to light-emitting component 812, be suitable for the luminous voltage of light-emitting component 812 so that power interface 792 can change into the voltage in the conventional socket.One or two capping 826 can comprise power interface 792, and power interface 792 can be electrically coupled to pin 828 and light-emitting component 812.Functional interface 794 can be electrically coupled to light-emitting component 812 and power interface 792, and functional interface 794 can comprise the interface for control light-emitting component 812 functions, for example mains switch, dimmer or any other suitable function.Functional interface 794 and power interface 792 can be overall shaped in one or two capping 726.Exterior circular column 824(or light-emitting component 812 be not if need exterior circular column 824) external diameter can equal substantially the external diameter of conventional fluorescent lamp bulb.For example, the external diameter of exterior circular column 824 can be 11/2 inch (38.1mm).The total length (length that does not comprise pin 828) of fluorescence replacement sub-assembly 823 can equal the length of the fluorescent lamp bulb of routine substantially.For example, the length of fluorescence replacement sub-assembly 823 can be 12 inches (304.8mm), 24 inches (609.6mm), 36 inches (914.4mm) or 48 inches (1219.2mm).Yet the length that the external diameter of exterior circular column 824 and fluorescence replace sub-assembly 823 can have any suitable value.
In another embodiment shown in Figure 94 A and 94B, the device 700 can comprise have can be luminous leading flank or the light-emitting component 830 of leading flank and dorsal surface.Light-emitting component 830 can be flexible or rigidity, and can have any suitable size.Plus end 832 can be arranged on light-emitting component 830 on first angle at the first edge 833.Plus end 832a can with light-emitting component 830 global formations, perhaps can be fixed to light-emitting component 830.Negative terminal 834a can be arranged on light-emitting component 830 on second angle at the first edge 833, and negative terminal 834a can with light-emitting component 830 global formations, perhaps can be fixed to light-emitting component 830.Identical plus end 832b and negative terminal 834b can be coupled to the relative angle at the second edge 835.Among one among plus end 832a, the 832b and negative terminal 834a, the 834b one can be coupled to element interface 836, and element interface 836 can comprise the power line 838 that is electrically coupled to power interface 792.Element interface 836 can be any shape or the configuration that can admit plus end 832a, 832b and negative terminal 834a, 832b.For example, element interface 836 can have roughly elongated shape, and it has the receiving channel 840 that extends along all or part of length of element interface 836.Receiving channel 840 can be suitable for admitting the first edge 833 of light-emitting component 830, so that the plus end 832a of light-emitting component 830 is electrically connected to the corresponding negative terminal that the negative terminal 834a of the plus end of corresponding element interface 836 and light-emitting component 830 is electrically connected to element interface 836.Therefore the combination of power from any normal power supplies such as wall outlet can be passed to light-emitting component 830 from power interface 792, thereby causes whole light-emitting component 830(or part light-emitting component 830) luminous.Functional interface 794 can be electrically coupled to element interface 836 and power interface 792, and functional interface 794 can comprise the interface for control light-emitting component 830 functions, for example mains switch, dimmer or any other suitable function.Functional interface 794 and power interface 792 global formations perhaps can be arranged on functional interface 794 on the element interface 836, shown in Figure 94 A.
Referring to Figure 94 B, light-emitting component 830 can be packaged into the volume 842 of light-emitting component 830, so that before assembling, can select the light-emitting component 830 of right quantity to produce the total length of expectation.For example, if each light-emitting component 830 is 12 inches long, but expect 24 inches length, can remove two light-emitting components 830 842 from rolling up.Single light-emitting component 830 can separate by for example perforated portion 844, and adjacent plus end 832a and negative terminal 834b(and contiguous negative terminal 834a and plus end 832b) can be along each perforated portion 844 separately.Yet, when terminal 832a, 832b, 834a, 834b do not separate along perforated portion 844, between adjacent light-emitting component 830, keep being electrically connected.
Terminal 832a, 832b, 834a, 834b can manually insert in any position on any limit of light-emitting component 830, but not aforesaid pre-connection terminal.For example, shown in Figure 94 C, main body 862 with substantially C-shape of a plurality of conductive members 864 can be around the expectation edge setting of light-emitting component 830, and compressible described main body 862 is so that the inside that conductive member 864 inserts light-emitting components 830, and inserted mode will describe in detail hereinafter.The first main body 862 can be plus end (for example, the main body 862 in Figure 94 C left side), and the second main body 862(is for example, the main body 862 on Figure 94 C right side) can be arranged on the light-emitting component 830, its direction substantially with the opposite direction of the first main body 862.Be applied to along with suitable plus end and negative terminal on each suitable angle of light-emitting component 830, can be with light-emitting component 830 insertion element interfaces 836 and luminous in the above described manner.Because terminal can be applied to desired locations, light-emitting component 830 manually can be cut into desired size from volume, described volume is similar at the volume 842 shown in Figure 94 B.
As mentioned above, luminous sheet material such as sidewall 703 can form deployable surface.More specifically, deployable surface is the surface that can be sprawled into the plane, and this plane is without distortion (that is, " stretching " or " compression ").On the contrary, deployable surface is to pass through the surface that conversion plane (that is, " fold ", " bending ", " coiling ", " cutting " and/or " gluing ") makes.On three dimensions, all extensible surfaces are ruled surfaces.If each point by the surface is in line from the teeth outwards, then this surface is straight burr.The most similar example is plane and the curved surface of cylinder or cone.Other examples are to have oval directrix, normal cone body, helicoid and the cone surface of the extensible smoothed curve of tangent line spatially.Ruled surface can be described all the time (at least partly) and be the set by the inswept point of mobile straight line.For example, cone is by keeping fixing with point on the line, moves another point and forms along circle simultaneously.
Figure 112 shows an exemplary embodiment of the bulb 1218 that comprises the photovoltaic circuit.Bulb 1218 can be taked the form of the normal cone body of brachymemma, and it forms by having the multilayer material that is arranged on a plurality of discrete light-emitting device on the multilayer material layer, as described in Figure 57.Basically the diode device that forms layering such as multilayer material and/or the discrete diode apparatus of formation as described in whole the specification.Particularly, bulb 1218 equipment 1228 that the equipment that is right after that is similar to the diode device shown in Figure 57 forms of can serving as reasons.Figure 113 shows the profile of equipment 1228.If equipment 1228 is formed by two parts, then each in them is basically identical with individual equipment shown in Figure 57, and they can engage so that the pedestal of each parts joins opposing face reflective or opaque material 1224 to.Alternatively, equipment 1226A and 1226B can form with forming device 1228 at the opposing face of single pedestal 305.Under any circumstance, the diode on each in equipment 1226A and 1226B thus arranged exposes in the opposite direction.
Still referring to Figure 112, the bulb 1218 that is formed by the equipment 1228 among Figure 113 has inner surface 1220 and outer surface 1222, and they can be equivalent to respectively layer 330A and the 330B of equipment 1228.Therefore, the diode that exposes along outer surface 1222 can be equivalent at the diode 100B shown in Figure 113, and the diode that exposes along inner surface 1220 can be equivalent to diode 100A.But in certain embodiments, diode 100A and diode 100B can be light-emitting diode, and in other embodiments, diode 100A can be light-emitting diode, and diode 100B can be photovoltaic diode.In this way, inner surface 1220 can be suitable for collecting light and the light that will collect changes into energy, for example be housed in the secondary power supply 1214, and outer surface 1222 can be suitable for the energy of main power source 1208 and/or secondary power supply 1214 is changed into light.
Should be appreciated that does not need main power source 1208 or secondary power supply 1214 to be bus.In fact, some embodiment can omit secondary power supply 1214 and energy storage device is applied as main power source 1208, and main power source 1208 and secondary power supply 1214 can be energy storage device in certain embodiments.When being coupled to the bulb for example during the bulb 1218 shown in Figure 112 with luminous and photovoltaic devices, lighting apparatus can carry out self-charging.For example, photovoltaic diode on a surface (for example outer surface 1222) light can be changed into energy with in the daytime to energy storage device charging, and the light-emitting diode on identical or different surface (for example inner surface 1220) can counter-rotating changes into light at night with the energy of storage.
In bulb, use a plurality of illuminating circuits also to make itself be used for other application.In certain embodiments, each in two or more illuminating circuits can be to the LED energization of different colours or colour temperature.Figure 114 shows two-layer 1235 and 1240 of luminaire 1230.Layer 1235 can be equivalent to the basalis 305 of Figure 57, and layer 1240 can be equivalent to the conductive layer 310 of Figure 57.The layer 1240 of luminaire 1230 comprises the first illuminating circuit 1240A and the second illuminating circuit 1240B.It is upper in order to be electrically coupled to the first illuminating circuit 1240A that more than first light-emitting diode 1242A of the first color or colour temperature can be deposited on the first illuminating circuit 1240A.It is upper in order to be electrically coupled to the second illuminating circuit 1240B that more than second light-emitting diode 1242B of the second color or colour temperature can be deposited on the second illuminating circuit 1240B.Figure 115 is that equipment 1230 is along the profile of line A-A intercepting.By among selectivity energization the first illuminating circuit 1240A and the second illuminating circuit 1240B one or two, can select color luminous from equipment 1230 and/or colour temperature.For example, if more than first light-emitting diode 1242A glows and more than second light-emitting diode 1242B blue light-emitting, then can be by selecting or combination energization the first illuminating circuit 1240A and the second illuminating circuit 1240B select ruddiness, blue light or pinkish red coloured light.If the 3rd illuminating circuit (not shown) is added in the equipment 1230, the light-emitting diode of additional color or colour temperature can be deposited on the 3rd illuminating circuit.In certain embodiments, the 3rd illuminating circuit can be deposited thereon the light-emitting diode of a plurality of green light.Use red, blue and green LED permission selection redness, blueness, green, magenta, yellow, cyan or white light at the illuminating circuit that separates.
The general closed planar form of lighting apparatus as herein described (that is, equipment 300) makes equipment be applicable to adopt any amount of form to be used for a plurality of luminous application.A plurality of embodiment mentioned above are described with reference to the circular cone and/or the cylindrical bulb sub-assembly that are coupled to base assembly, and described base assembly has the Edison screw in order to coupling power.Yet as repeatedly pointing out, described a plurality of embodiment do not need to have the pedestal of Edison screw.
In certain embodiments, light-emitting component can have the contact surface that is incorporated in its structure.Figure 139 shows light-emitting component 1438, and it has two contact surfaces 1464 and 1468 that are fixed on the appropriate location of light-emitting component 1438.In the contact surface 1464 and 1468 each is electrically coupled to the corresponding conductive layer 1470 and 1472 in the light-emitting component 1438.In certain embodiments, contact surface 1464 is electrically coupled to conductive layer 1470 by path 1474, and contact surface 1468 is electrically coupled to conductive layer 1472 by path 1476.
In certain embodiments, contact surface 1464 and 1468 can be coupled to power supply via self-adhering electrode 1478, for example those shown in Figure 140.Self-adhering electrode 1478 can be connected to conductive surface 1468 and 1464.Conductor 1480 can be coupled to viscosity electrode 1478 by any known method, and in certain embodiments can be by being coupled to viscosity electrode 1478 by buckle mechanism 1482.The light-emitting component 1438 more than one that modular arrangement shown in Figure 140 allows the user to connect is coupled to power supply and/or controller 1484.
Although the present invention is described with respect to its specific embodiment, these embodiment only are used for illustration purpose and do not limit the present invention.In this paper describes, many details are provided, for example electronic building brick, electronics with structure connection be connected the example of material and constructional variant, thereby the fully understanding to the embodiment of the invention is provided.Yet will recognize that those skilled in the relevant art embodiments of the invention can implement in the situation without one or more details, perhaps use the enforcements such as other equipment, system, sub-assembly, assembly, material, parts.In other cases, the structure of knowing that does not specifically illustrate or describe in detail, material or operation are to avoid covering the aspect of the embodiment of the invention.Those skilled in the art will recognize that also method step additional or that be equal to can be utilized, and perhaps can be used in combination with other steps, perhaps can be different order implement, any and Overall Steps is in the scope of the invention that is subjected to claims protection.In addition, not to scale (NTS) is drawn many figure, and should not think that they are restrictive.
Mention that in this specification " embodiment ", " certain embodiment " or concrete " embodiment " refer at least one embodiment, rather than must be in all embodiments, concrete parts, structure or a feature that comprises related description with described embodiment, and the identical embodiment of the definiteness that differs.In addition, concrete parts, structure or the feature of any specific embodiment can be combined in any suitable manner with one or more other embodiment carries out any suitable combination, comprises using not corresponding to the alternative pack that other use parts.In addition, can prepare multiple correction form to adapt to concrete application, form or the material of essence of the present invention and scope.Should understand, other modification and correction form of the present invention and embodiment illustrated herein are possible according to this paper instruction, and think that they are parts of the spirit and scope of the invention.
Also will recognize one or more element illustrated in the accompanying drawings also can be more independently or whole mode use, perhaps even in some cases be removed or cause and can not operate, this can use according to concrete application.The global formation of assembly makes up also within the scope of the invention, especially for wherein separation or the combination of discrete component are that unclear or indiscernible embodiment is all the more so.In addition, term used herein " coupling ", comprise the multi-form such as " coupling " or " can be coupled " of it, mean and comprise directly any or indirectly electricity, structure or magnetic coupling, connection or binding, perhaps for this type of directly or indirectly adaptability or the ability of electricity, structure or magnetic coupling, connection or binding, comprise the global formation assembly and via or assembly by another assembly coupling.
As used herein, be the object of the invention, term " LED " and plural form thereof " a plurality of LED " are understood to include the vector injection of any electroluminescent diode or other types-or based on the system that connects, it can produce radiation in response to the signal of telecommunication, unrestrictedly comprise in response to the luminous a plurality of semiconductors of curtage-or carbon back structure, light emitting polymer, organic LED etc., be included in visible light any bandwidth or any color or colour temperature or other spectrum such as ultraviolet or the infrared spectrum.Also as used herein, be the object of the invention, term " photovoltaic diode " (or PV) and plural form thereof " a plurality of PV " are understood to include the vector injection of any photovoltaic diode or other types-or based on the system that connects, it can produce the signal of telecommunication (for example voltage) in response to projectile energy (for example light or other electromagnetic waves), unrestrictedly comprise a plurality of semiconductors of producing the signal of telecommunication in response to light-or carbon back structure, be included in the visible light or other spectrum such as ultraviolet or infrared spectrum of any bandwidth or wave spectrum.
Dimension disclosed herein and value are not intended to be understood to strictly be limited to described exact value.On the contrary, except as otherwise noted, each such dimension is intended to represent described value and centers on the scope that is equal on this value function.For example, disclosed dimension " 40mm " is intended to expression " about 40mm ".
The relevant portion of the used document of quoting in the detailed Description Of The Invention is incorporated herein by reference; Quoting of any document all may not be interpreted as its approval as prior art of the present invention.When any implication of same term in any implication of term in the literature or definition and the document of incorporating into way of reference or define when conflicting, will be as the criterion with implication or the definition of giving that term in the literature.
In addition, any arrow mark in picture/figure should think it only is exemplary and nonrestrictive, unless specifically indicate in addition.Also will think form step combination within the scope of the invention, separate especially therein or the ability of combination is all the more so in the unclear or foreseeable situation.Except as otherwise noted, the term "or" of extracting as used herein and that spread all over subsidiary claims generally be intended to refer to " and/or ", the implication that has conjunction and the extract implication of distance (and be not limited to).Used " one ", " a kind of " and " described " comprise that plural number refers in this paper description and whole claims of enclosing, unless clearly indicate in addition in the context.This paper describe and whole claims of enclosing in used " ... in " implication also comprise " ... in " and " ... on ", unless clearly indicate in addition in the context.
The aforementioned content of illustrated embodiment of the present invention is included in the content of describing in summary of the invention or the specification digest, is not intended to completely or is intended to limit the invention to concrete form disclosed herein.From aforementioned content, will observe in the situation of the essence that does not break away from new ideas of the present invention and scope, and be intended to carry out multiple change, modification and substitute and they can be effectively.Should understand, not be intended to or should not infer the restriction that has for concrete grammar shown in this paper and equipment.Certainly, be intended to by appended claims all these type of modification are encompassed in the scope of claims.

Claims (129)

1. one kind for lighting apparatus private and/or personal consumption or household consumption, comprising:
(a) composition, it comprises:
A plurality of diodes;
The first solvent; With
Viscosity modifier;
(b) electrical interface that is configured to receive the signal of telecommunication and described electrical signal transfer is arrived described a plurality of diodes; And
(c) wherein said equipment is for private and/or personal consumption or household consumption.
2. equipment according to claim 1, wherein said the first solvent comprise and are selected from following at least a solvent: water; Alcohol is such as methyl alcohol, ethanol, normal propyl alcohol (comprising 1-propyl alcohol, 2-propyl alcohol (IPA)), butanols (comprising n-butyl alcohol, 2-butanols (isobutanol)), amylalcohol (comprising 1-amylalcohol, 2-amylalcohol, 3-amylalcohol), octanol, tetrahydrofurfuryl alcohol (THFA), cyclohexanol, terpineol; Ether such as ethyl methyl ether, ether, ethylene-propylene ether and polyethers; Ester such as ethyl acetate; Glycol such as ethylene glycol, diethylene glycol (DEG), polyethylene glycol, propylene glycol, glycol ether, glycol ether acetate; Carbonate such as propylene carbonate; Glycerine, acetonitrile, oxolane (THF), dimethyl formamide (DMF), N-METHYLFORMAMIDE (NMF), dimethyl sulfoxide (DMSO) (DMSO); And their mixture.
3. equipment according to claim 1, wherein said the first solvent comprises normal propyl alcohol.
4. equipment according to claim 1, wherein by weight of the composition, the content of described the first solvent is about 5% to 50%.
5. equipment according to claim 1, wherein said viscosity modifier comprises the methoxyl group celluosic resin.
6. equipment according to claim 1, wherein said viscosity modifier comprises the hydroxypropyl cellulose resin.
7. equipment according to claim 1, wherein by weight of the composition, the content of described viscosity modifier is about 0.75% to 5%.
8. equipment according to claim 1, wherein said viscosity modifier comprise and are selected from following at least a viscosity modifier: clay such as HECTABRITE DP, POLARGEL NF, organo-clay; Carbohydrate and polysaccharide such as guar gum, xanthans; Cellulose and modified cellulose such as CMC, methylcellulose, methoxyl group cellulose, carboxymethyl cellulose, hydroxyethylcellulose and hydroxypropyl cellulose, cellulose ether, cellulosic ether, chitosan; Polymer such as acrylate and (methyl) acrylate polymer and copolymer, diethylene glycol (DEG), propylene glycol, pyrogenic silica, SiO 2 powder; Modified urea; And their mixture.
9. equipment according to claim 1 also comprises the second solvent that is different from described the first solvent.
10. equipment according to claim 9, wherein said the second solvent is to be selected from following at least a solvent: water; Alcohol is such as methyl alcohol, ethanol, normal propyl alcohol (comprising 1-propyl alcohol, 2-propyl alcohol (isopropyl alcohol)), isobutanol, butanols (comprising n-butyl alcohol, 2-butanols), amylalcohol (comprising 1-amylalcohol, 2-amylalcohol, 3-amylalcohol), octanol, tetrahydrofurfuryl alcohol, cyclohexanol; Ether such as ethyl methyl ether, ether, ethylene-propylene ether and polyethers; Ester such as ethyl acetate, dimethyl adipate ester, propylene glycol methyl ether acetate, dimethyl glutarate, dimethyl succinate ester; Glycol such as ethylene glycol, diethylene glycol (DEG), polyethylene glycol, propylene glycol, glycol ether, glycol ether acetate; Carbonate such as propylene carbonate; Glycerine, acetonitrile, oxolane (THF), dimethyl formamide (DMF), N-METHYLFORMAMIDE (NMF), dimethyl sulfoxide (DMSO) (DMSO); And their mixture.
11. equipment according to claim 9, wherein said the second solvent is at least a dibasic ester.
12. equipment according to claim 9, wherein said the second solvent comprises resolvating agent or wetting solvent.
13. equipment according to claim 9, wherein said the second solvent comprises:
Dimethyl glutarate; With
The dimethyl succinate ester;
Wherein said dimethyl glutarate is two-to-one approximately (2:1) to the ratio of dimethyl succinate ester.
14. equipment according to claim 9, wherein by weight of the composition, the content of described the second solvent is about 0.1% to 10%.
15. equipment according to claim 9, wherein by weight of the composition, the content of described the second solvent is about 0.5% to 6%.
16. equipment according to claim 9, wherein said the first solvent comprises normal propyl alcohol, ethanol, tetrahydrofurfuryl alcohol or cyclohexanol, and content by weight of the composition is about 5% to 50%; Wherein said viscosity modifier comprises methoxyl group cellulose or hydroxypropyl cellulose resin, and content by weight of the composition is about 0.75% to 5.0%; Wherein said the second solvent comprises the by weight of the composition non-polar resin solvent of about 0.5% to 10% content; And the surplus of wherein said composition also comprises water.
17. a method for preparing equipment according to claim 16, described method comprises:
Mix described a plurality of diode and normal propyl alcohol;
The mixture of described normal propyl alcohol and a plurality of diodes is joined in the described methylcellulose resin;
Add described dimethyl glutarate and dimethyl succinate ester; And
In air atmosphere, mixed described a plurality of diodes, normal propyl alcohol, methylcellulose resin, dimethyl glutarate and dimethyl succinate ester about 25 to 30 minutes.
18. method according to claim 17 also comprises:
From wafer, discharge described a plurality of diodes.
19. method according to claim 18, the step that wherein discharges described a plurality of diodes from described wafer also comprises the dorsal surface of polishing and polishing described wafer.
20. method according to claim 18, the step that wherein discharges described a plurality of diodes from described wafer also comprises the dorsal surface of the described wafer of laser lift-off.
21. equipment according to claim 9, wherein said the first solvent comprise by weight of the composition about normal propyl alcohol of 15% to 40%, ethanol, tetrahydrofurfuryl alcohol or cyclohexanol; Wherein said viscosity modifier comprises by weight of the composition about 1.25% to 2.5% methoxyl group cellulose or hydroxypropyl cellulose resin; Wherein said the second solvent comprises by weight of the composition about 0.5% to 10% non-polar resin solvent; And the surplus of wherein said composition also comprises water.
22. equipment according to claim 9, wherein said the first solvent comprise by weight of the composition about normal propyl alcohol of 17.5% to 22.5%, ethanol, tetrahydrofurfuryl alcohol or cyclohexanol; Wherein said viscosity modifier comprises by weight of the composition about 1.5% to 2.25% methoxyl group cellulose or hydroxypropyl cellulose resin; Wherein said the second solvent comprises by weight of the composition about 0.01% to 6.0% at least a dibasic ester; The surplus of wherein said composition also comprises water; And the viscosity of wherein said composition 25 ℃ basically between about 5,000cps is to about 20, between the 000cps.
23. equipment according to claim 9, wherein said the first solvent comprise by weight of the composition about normal propyl alcohol of 20% to 40%, ethanol, tetrahydrofurfuryl alcohol and/or cyclohexanol; Wherein said viscosity modifier comprises by weight of the composition about 1.25% to 1.75% methoxyl group cellulose or hydroxypropyl cellulose resin; Wherein said the second solvent comprises by weight of the composition about 0.01% to 6.0% at least a dibasic ester; The surplus of wherein said composition also comprises water; And the viscosity of wherein said composition 25 ℃ basically between about 1,000cps is to about 5, between the 000cps.
24. equipment according to claim 1, wherein said composition have about 25 ℃ basically between about 1,000cps and about 20, the viscosity between the 000cps.
25. equipment according to claim 1, wherein said composition has about 10 at about 25 ℃, the viscosity of 000cps.
26. equipment according to claim 1, each diode in wherein said a plurality of diodes comprises GaN and silicon substrate.
27. equipment according to claim 1, each diode in wherein said a plurality of diodes comprises GaN heterostructure and GaN substrate.
28. according to claim 26 or 27 described equipment, the GaN of each diode in wherein said a plurality of diodes partly is basically foliated, star or annular.
29. equipment according to claim 1, each diode in wherein said a plurality of diodes have the second metal end on the first metal end on the first side of described diode and the second dorsal surface at described diode.
30. equipment according to claim 1, each diode in wherein said a plurality of diodes only has a metal end or electrode.
31. equipment according to claim 1, each diode in wherein said a plurality of diode has at least one metal pathway structure, and described metal pathway structure is extended between the second dorsal surface of described diode between at least one p+ on the first side of described diode or n+GaN layer.
32. equipment according to claim 31, wherein said metal pathway structure comprises central corridor, periphery path or peripheral path.
33. equipment according to claim 1, any size of each diode in wherein said a plurality of diodes are all less than about 450 microns.
34. equipment according to claim 1, any size of each diode in wherein said a plurality of diodes are all less than about 200 microns.
35. equipment according to claim 1, any size of each diode in wherein said a plurality of diodes are all less than about 100 microns.
36. equipment according to claim 1, any size of each diode in wherein said a plurality of diodes are all less than about 50 microns.
37. equipment according to claim 1, each diode in wherein said a plurality of diodes is basically hexagonal, and diameter is about 20 to 30 microns, and highly is about 10 to 15 microns.
38. equipment according to claim 1, wherein said viscosity modifier also comprises the adhesive viscosities conditioning agent.
39. equipment according to claim 1, wherein when being dried or solidify, the periphery that described viscosity modifier centers on each diode in described a plurality of diodes basically forms polymer or resin lattice or structure.
40. equipment according to claim 1, wherein when moistening, described composition is visually opaque, and when being dried or solidify, described composition is basically visually transparent.
41. equipment according to claim 1, wherein said the first solvent are non-electric insulations basically.
42. equipment according to claim 1, wherein said composition have greater than about 25 degree or greater than about 40 contact angles of spending.
43. comprising, equipment according to claim 1, wherein said a plurality of diodes is selected from following at least a inorganic semiconductor: silicon, GaAs (GaAs), gallium nitride (GaN), GaP, InAlGaP, InAlGaP, AlInGaAs, InGaNAs and AlInGASb.
44. comprising, equipment according to claim 1, wherein said a plurality of diodes is selected from following at least a organic semiconductor: pi-conjugated polymer, poly-(acetylene), poly-(pyrroles), poly-(thiophene), polyaniline, polythiophene, poly-(to phenylene sulfoether), poly-(to the styrene support) (PPV) and the PPV derivative, poly-(3-alkylthrophene), poly-indoles, poly-pyrene, polycarbazole, poly-Azulene, poly-azepine, poly-(fluorenes), poly-naphthalene, polyaniline, polyaniline derivative, polythiophene, polythiofuran derivative, poly-giving a tongue-lashing coughed up, poly-giving a tongue-lashing coughed up derivative, the polyphenyl bithiophene, the polyphenyl thiophthene derivative, polyparaphenylene, the poly radical derivative, polyacetylene, Polyacetylene Derivatives, polydiacetylene, the polydiacetylene derivative, poly-to the benzene ethylene, poly-to benzene ethylene derivative, poly-naphthalene, poly-naphthalene derivatives, polyisothianaphthene (PITN), (wherein heteroaryl is thiophene in poly-heteroaryl ethylene support (ParV), furans or pyrroles, polyphenylene-sulfide (PPS)), poly-all positions naphthalene (PPN), poly-phthalocyanine (PPhc), with their derivative, their copolymer, and their mixture.
45. equipment according to claim 1, wherein said composition have the relative evaporation speed less than 1, wherein said evaporation rate has 1 speed with respect to butyl acetate.
46. lighting apparatus according to claim 1 wherein is printed on described composition on the first conductor that is coupled to pedestal.
47. one kind for lighting apparatus private and/or personal consumption or household consumption, comprising:
(a) composition, it comprises:
A plurality of diodes; With
Viscosity modifier;
(b) electrical interface that is configured to receive the signal of telecommunication and described electrical signal transfer is arrived described a plurality of diodes;
(c) wherein said equipment is for private and/or personal consumption or household consumption.
48. described equipment according to claim 47, wherein said viscosity modifier comprises the methoxyl group celluosic resin.
49. described equipment according to claim 47, wherein said viscosity modifier comprises the hydroxypropyl cellulose resin.
50. described equipment according to claim 47, wherein by weight of the composition, the content of described viscosity modifier is about 0.75% to 5%.
51. comprising, described equipment according to claim 47, wherein said viscosity modifier is selected from following at least a viscosity modifier: clay such as HECTABRITE DP, POLARGEL NF, organo-clay; Carbohydrate and polysaccharide such as guar gum, xanthans; Cellulose and modified cellulose such as CMC, methylcellulose, methoxyl group cellulose, carboxymethyl cellulose, hydroxyethylcellulose and hydroxypropyl cellulose, cellulose ether, cellulosic ether, chitosan; Polymer such as acrylate and (methyl) acrylate polymer and copolymer, diethylene glycol (DEG), propylene glycol, pyrogenic silica, SiO 2 powder; Modified urea; And their mixture.
52. described equipment also comprises the first solvent according to claim 47.
53. comprising, 2 described equipment according to claim 5, wherein said the first solvent are selected from following at least a solvent: water; Alcohol is such as methyl alcohol, ethanol, normal propyl alcohol (comprising 1-propyl alcohol, 2-propyl alcohol (IPA)), butanols (comprising n-butyl alcohol, 2-butanols (isobutanol)), amylalcohol (comprising 1-amylalcohol, 2-amylalcohol, 3-amylalcohol), octanol, tetrahydrofurfuryl alcohol (THFA), cyclohexanol, terpineol; Ether such as ethyl methyl ether, ether, ethylene-propylene ether and polyethers; Ester such as ethyl acetate; Glycol such as ethylene glycol, diethylene glycol (DEG), polyethylene glycol, propylene glycol, glycol ether, glycol ether acetate; Carbonate such as propylene carbonate; Glycerine, acetonitrile, oxolane (THF), dimethyl formamide (DMF), N-METHYLFORMAMIDE (NMF), dimethyl sulfoxide (DMSO) (DMSO); And their mixture.
54. 2 described equipment according to claim 5, wherein said the first solvent comprises normal propyl alcohol.
55. 2 described equipment according to claim 5, wherein by weight of the composition, the content of described the first solvent is about 5% to 50%.
56. 2 described equipment also comprise the second solvent that is different from described the first solvent according to claim 5.
57. 6 described equipment according to claim 5, wherein said the second solvent is to be selected from following at least a solvent: water; Alcohol is such as methyl alcohol, ethanol, normal propyl alcohol (comprising 1-propyl alcohol, 2-propyl alcohol (isopropyl alcohol)), isobutanol, butanols (comprising n-butyl alcohol, 2-butanols), amylalcohol (comprising 1-amylalcohol, 2-amylalcohol, 3-amylalcohol), octanol, tetrahydrofurfuryl alcohol, cyclohexanol; Ether such as ethyl methyl ether, ether, ethylene-propylene ether and polyethers; Ester such as ethyl acetate, dimethyl adipate ester, propylene glycol methyl ether acetate, dimethyl glutarate, dimethyl succinate ester; Glycol such as ethylene glycol, diethylene glycol (DEG), polyethylene glycol, propylene glycol, glycol ether, glycol ether acetate; Carbonate such as propylene carbonate; Glycerine, acetonitrile, oxolane (THF), dimethyl formamide (DMF), N-METHYLFORMAMIDE (NMF), dimethyl sulfoxide (DMSO) (DMSO); And their mixture.
58. 6 described equipment according to claim 5, wherein said the second solvent is at least a dibasic ester.
59. 6 described equipment according to claim 5, wherein said the second solvent comprises resolvating agent or wetting solvent.
60. 6 described equipment according to claim 5, wherein said the second solvent comprises:
Dimethyl glutarate; With
The dimethyl succinate ester;
Wherein said dimethyl glutarate is two-to-one approximately (2:1) to the ratio of dimethyl succinate ester.
61. 6 described equipment according to claim 5, wherein by weight of the composition, the content of described the second solvent is about 0.1% to 10%.
62. 6 described equipment according to claim 5, wherein by weight of the composition, the content of described the second solvent is about 0.5% to 6%.
63. 6 described equipment according to claim 5, wherein said the first solvent comprises normal propyl alcohol, ethanol, tetrahydrofurfuryl alcohol or cyclohexanol, and content by weight of the composition is about 5% to 50%; Wherein said viscosity modifier comprises methoxyl group cellulose or hydroxypropyl cellulose resin, and content by weight of the composition is about 0.75% to 5.0%; Wherein said the second solvent comprises the by weight of the composition non-polar resin solvent of about 0.5% to 10% content; And the surplus of wherein said composition also comprises water.
64. one kind prepares the according to claim 6 method of 3 described equipment, described method comprises:
Mix described a plurality of diode and normal propyl alcohol;
The mixture of described normal propyl alcohol and a plurality of diodes is joined in the described methylcellulose resin;
Add described dimethyl glutarate and dimethyl succinate ester; And
In air atmosphere, mixed described a plurality of diodes, normal propyl alcohol, methylcellulose resin, dimethyl glutarate and dimethyl succinate ester about 25 to 30 minutes.
65. 4 described methods according to claim 6 also comprise:
From wafer, discharge described a plurality of diodes.
66. 5 described methods according to claim 6, the step that wherein discharges described a plurality of diodes from described wafer comprise polishing and polish the dorsal surface of described wafer.
67. 5 described methods according to claim 6, the step that wherein discharges described a plurality of diodes from described wafer comprises the dorsal surface of the described wafer of laser lift-off.
68. 6 described equipment according to claim 5, wherein said the first solvent comprises by weight about normal propyl alcohol of 15% to 40%, ethanol, tetrahydrofurfuryl alcohol or cyclohexanol; Wherein said viscosity modifier comprises by weight of the composition about 1.25% to 2.5% methoxyl group cellulose or hydroxypropyl cellulose resin; Wherein said the second solvent comprises by weight of the composition about 0.5% to 10% non-polar resin solvent; And the surplus of wherein said composition also comprises water.
69. 6 described equipment according to claim 5, wherein said the first solvent comprises by weight of the composition about normal propyl alcohol of 17.5% to 22.5%, ethanol, tetrahydrofurfuryl alcohol or cyclohexanol; Wherein said viscosity modifier comprises by weight of the composition about 1.5% to 2.25% methoxyl group cellulose or hydroxypropyl cellulose resin; Wherein said the second solvent comprises by weight of the composition about 0.01% to 6.0% at least a dibasic ester; The surplus of wherein said composition also comprises water; And the viscosity of wherein said composition 25 ℃ basically between about 5,000cps is to about 20, between the 000cps.
70. 6 described equipment according to claim 5, wherein said the first solvent comprises by weight of the composition about normal propyl alcohol of 20% to 40%, ethanol, tetrahydrofurfuryl alcohol and/or cyclohexanol; Wherein said viscosity modifier comprises by weight of the composition about 1.25% to 1.75% methoxyl group cellulose or hydroxypropyl cellulose resin; Wherein said the second solvent comprises by weight of the composition about 0.01% to 6.0% at least a dibasic ester; The surplus of wherein said composition also comprises water; And the viscosity of wherein said composition 25 ℃ basically between about 1,000cps is to about 5, between the 000cps.
71. described equipment according to claim 47, wherein said composition have about 25 ℃ basically between about 1,000cps and about 20, the viscosity between the 000cps.
72. described equipment according to claim 47, wherein said composition has about 10 at about 25 ℃, the viscosity of 000cps.
73. described equipment according to claim 47, each diode in wherein said a plurality of diodes comprises GaN and silicon substrate.
74. described equipment according to claim 47, each diode in wherein said a plurality of diodes comprises GaN heterostructure and GaN substrate.
75. 3 or 74 described equipment according to claim 7, the GaN of each diode in wherein said a plurality of diodes partly is basically foliated, star or annular.
76. described equipment according to claim 47, each diode in wherein said a plurality of diodes only has a metal end or electrode.
77. described equipment according to claim 47, each diode in wherein said a plurality of diodes has the second metal end on the first metal end on the first side of described diode and the second dorsal surface at described diode.
78. described equipment according to claim 47, each diode in wherein said a plurality of diode has at least one metal pathway structure, and described metal pathway structure is extended between the second dorsal surface of described diode between at least one p+ on the first side of described diode or n+GaN layer.
79. equipment according to claim 31, wherein said metal pathway structure comprises central corridor, periphery path or peripheral path.
80. described equipment according to claim 47, any size of each diode in wherein said a plurality of diodes is all less than about 450 microns.
81. described equipment according to claim 47, any size of each diode in wherein said a plurality of diodes is all less than about 200 microns.
82. described equipment according to claim 47, any size of each diode in wherein said a plurality of diodes is all less than about 100 microns.
83. described equipment according to claim 47, any size of each diode in wherein said a plurality of diodes is all less than about 50 microns.
84. described equipment according to claim 47, each diode in wherein said a plurality of diodes is basically hexagonal, and diameter is about 20 to 30 microns, and highly is about 10 to 15 microns.
85. described equipment according to claim 47, wherein said viscosity modifier also comprises the adhesive viscosities conditioning agent.
86. described equipment according to claim 47, wherein when being dried or solidify, the described viscosity modifier basically periphery of each diode in described a plurality of diodes forms polymer or resin lattice or structure.
87. described equipment according to claim 47, wherein when moistening, described composition is visually opaque, and when being dried or solidify, described composition is basically visually transparent.
88. described equipment according to claim 47, wherein said the first solvent are non-electric insulations basically.
89. described equipment according to claim 47, wherein said composition have the contact angle greater than about 25 degree.
90. described equipment according to claim 47, wherein said composition have the contact angle greater than about 40 degree.
91. described equipment according to claim 47, wherein said composition has the relative evaporation speed less than 1, and wherein said evaporation rate has 1 speed with respect to butyl acetate.
92. one kind prepares the according to claim 47 method of described equipment, described method comprises:
Described composition is printed on the first conductor that is coupled to pedestal.
93. one kind for lighting apparatus private and/or personal consumption or household consumption, comprising:
(a) composition, it comprises:
A plurality of diodes;
The first solvent;
The second solvent; With
Be used for being provided at 25 ℃ basically between about 5 to described composition 000cps and about 15, the viscosity modifier of the viscosity between the 000cps;
(b) electrical interface that is configured to receive the signal of telecommunication and described electrical signal transfer is arrived described a plurality of diodes;
(c) wherein said equipment is for private and/or personal consumption or household consumption.
94. one kind for lighting apparatus private and/or personal consumption or household consumption, comprising:
(a) composition, it comprises:
A plurality of diodes; With
The first wetting solvent;
(b) electrical interface that is configured to receive the signal of telecommunication and described electrical signal transfer is arrived described a plurality of diodes;
(c) wherein said equipment is for private and/or personal consumption or household consumption.
95. one kind for lighting apparatus private and/or personal consumption or household consumption, comprising:
(a) composition, it comprises:
A plurality of diodes; With
The adhesive viscosities conditioning agent;
(b) electrical interface that is configured to receive the signal of telecommunication and described electrical signal transfer is arrived described a plurality of diodes;
(c) wherein said equipment is for private and/or personal consumption or household consumption.
96. one kind for lighting apparatus private and/or personal consumption or household consumption, comprising:
(a) composition, it comprises:
A plurality of diodes; With
Be used for being provided at 25 ℃ basically between about 1 to described composition 000cps and about 20, the viscosity modifier of the viscosity between the 000cps;
(b) electrical interface that is configured to receive the signal of telecommunication and described electrical signal transfer is arrived described a plurality of diodes;
(c) wherein said equipment is for private and/or personal consumption or household consumption.
97. one kind for lighting apparatus private and/or personal consumption or household consumption, comprising:
(a) composition, it comprises:
A plurality of diodes;
The first solvent that comprises normal propyl alcohol, ethanol, tetrahydrofurfuryl alcohol or cyclohexanol;
The viscosity modifier that comprises methoxyl group cellulose or hydroxypropyl cellulose resin;
The second non-polar resin solvent; With
(b) electrical interface that is configured to receive the signal of telecommunication and described electrical signal transfer is arrived described a plurality of diodes;
(c) wherein said equipment is for private and/or personal consumption or household consumption.
98. one kind for lighting apparatus private and/or personal consumption or household consumption, comprising:
(a) composition, it comprises:
A plurality of diodes;
The first solvent, it comprises by weight of the composition about normal propyl alcohol of 15% to 40%, ethanol, tetrahydrofurfuryl alcohol or cyclohexanol;
Viscosity modifier, it comprises by weight of the composition about 1.25% to 2.5% methoxyl group cellulose or hydroxypropyl cellulose resin;
About dibasic ester of 0.5% to 10% by weight of the composition; With
(b) electrical interface that is configured to receive the signal of telecommunication and described electrical signal transfer is arrived described a plurality of diodes;
(c) wherein said equipment is for private and/or personal consumption or household consumption.
99. one kind for lighting apparatus private and/or personal consumption or household consumption, comprising:
(a) composition, it comprises:
A plurality of diodes;
The first solvent, it comprises by weight of the composition about normal propyl alcohol of 17.5% to 22.5%, ethanol, tetrahydrofurfuryl alcohol or cyclohexanol;
Viscosity modifier, it comprises by weight of the composition about 1.5% to 2.25% methoxyl group cellulose or hydroxypropyl cellulose resin; With
About 0.01% to 6.0% at least a dibasic ester by weight of the composition;
The viscosity of wherein said composition 25 ℃ basically between about 5,000cps is to about 20, between the 000cps; With
(b) electrical interface that is configured to receive the signal of telecommunication and described electrical signal transfer is arrived described a plurality of diodes;
(c) wherein said equipment is for private and/or personal consumption or household consumption.
100. one kind for lighting apparatus private and/or personal consumption or household consumption, comprising:
(a) composition, it comprises:
A plurality of diodes;
The first solvent, it comprises by weight of the composition about normal propyl alcohol of 20% to 40%, ethanol, tetrahydrofurfuryl alcohol or cyclohexanol;
Viscosity modifier, it comprises by weight of the composition about 1.25% to 1.75% methoxyl group cellulose or hydroxypropyl cellulose resin; With
About 0.01% to 6.0% at least a dibasic ester by weight of the composition;
The viscosity of wherein said composition 25 ℃ basically between about 1,000cps is to about 5, between the 000cps; With
(b) electrical interface that is configured to receive the signal of telecommunication and described electrical signal transfer is arrived described a plurality of diodes;
(c) wherein said equipment is for private and/or personal consumption or household consumption.
101. one kind for lighting apparatus private and/or personal consumption or household consumption, comprising:
(a) composition, it comprises:
A plurality of diodes;
Normal propyl alcohol;
The methoxyl group celluosic resin;
Dimethyl glutarate; With
(b) electrical interface that is configured to receive the signal of telecommunication and described electrical signal transfer is arrived described a plurality of diodes;
(c) wherein said equipment is for private and/or personal consumption or household consumption.
102. one kind for lighting apparatus private and/or personal consumption or household consumption, comprising:
(a) composition, it comprises:
A plurality of diodes;
Normal propyl alcohol;
The hydroxypropyl cellulose resin;
Dimethyl glutarate; With
(b) electrical interface that is configured to receive the signal of telecommunication and described electrical signal transfer is arrived described a plurality of diodes;
(c) wherein said equipment is for private and/or personal consumption or household consumption.
103. one kind for lighting apparatus private and/or personal consumption or household consumption, comprising:
(a) composition, it comprises:
A plurality of diodes;
Normal propyl alcohol;
Methoxyl group celluosic resin or hydroxypropyl cellulose resin;
Dimethyl glutarate;
The dimethyl succinate ester; With
(b) electrical interface that is configured to receive the signal of telecommunication and described electrical signal transfer is arrived described a plurality of diodes;
(c) wherein said equipment is for private and/or personal consumption or household consumption.
104. one kind for luminaire private and/or personal consumption or household consumption, comprises power supply module, it is configured to: receive the signal of telecommunication from power supply; And with described electrical signal transfer to luminous power consumption assembly, and wherein said luminous power consumption assembly comprises and is selected from following composition:
A. the first composition, it comprises: a plurality of diodes; The first solvent; And viscosity modifier;
B. the second composition, it comprises: a plurality of diodes; And viscosity modifier;
C. the 3rd composition, it comprises: a plurality of diodes; The first solvent; The second solvent; And viscosity modifier;
D. the 4th composition, it comprises: a plurality of diodes; With wetting solvent;
E. the 5th composition, it comprises: a plurality of diodes; With the adhesive viscosities conditioning agent;
F. the 6th composition, it comprises: a plurality of diodes; The first solvent that comprises normal propyl alcohol, ethanol, tetrahydrofurfuryl alcohol or cyclohexanol; The viscosity modifier that comprises methoxyl group cellulose or hydroxypropyl cellulose resin; The second non-polar resin solvent;
G. the 7th composition, it comprises: a plurality of diodes; The first solvent that comprises normal propyl alcohol, ethanol, tetrahydrofurfuryl alcohol or cyclohexanol; The viscosity modifier that comprises methoxyl group cellulose or hydroxypropyl cellulose resin; And dibasic ester;
H. the 8th composition, it comprises: a plurality of diodes; Normal propyl alcohol; The methoxyl group celluosic resin; And dimethyl glutarate;
I. the 9th composition, it comprises: a plurality of diodes; Normal propyl alcohol; The hydroxypropyl cellulose resin; And dimethyl glutarate;
J. the tenth composition, it comprises: a plurality of diodes; Normal propyl alcohol; Methoxyl group celluosic resin or hydroxypropyl cellulose resin; Dimethyl glutarate; With the dimethyl succinate ester; With
K. their mixture; And
Wherein said luminous power consumption assembly is configured to described electrical signal transfer to described a plurality of diodes;
Wherein said equipment is for private and/or personal consumption or household consumption.
115. such as each described equipment in the aforementioned claim, described equipment is without radiator and/or fin.
116. the luminous power consumption assembly for private and/or personal consumption or household consumption comprises and is selected from following composition:
A. the first composition, it comprises: a plurality of diodes; The first solvent; And viscosity modifier;
B. the second composition, it comprises: a plurality of diodes; And viscosity modifier;
C. the 3rd composition, it comprises: a plurality of diodes; The first solvent; The second solvent; And viscosity modifier;
D. the 4th composition, it comprises: a plurality of diodes; With wetting solvent;
E. the 5th composition, it comprises: a plurality of diodes; With the adhesive viscosities conditioning agent;
F. the 6th composition, it comprises: a plurality of diodes; The first solvent that comprises normal propyl alcohol, ethanol, tetrahydrofurfuryl alcohol or cyclohexanol; The viscosity modifier that comprises methoxyl group cellulose or hydroxypropyl cellulose resin; The second non-polar resin solvent;
G. the 7th composition, it comprises: a plurality of diodes; The first solvent that comprises normal propyl alcohol, ethanol, tetrahydrofurfuryl alcohol or cyclohexanol; The viscosity modifier that comprises methoxyl group cellulose or hydroxypropyl cellulose resin; And dibasic ester;
H. the 8th composition, it comprises: a plurality of diodes; Normal propyl alcohol; The methoxyl group celluosic resin; And dimethyl glutarate;
I. the 9th composition, it comprises: a plurality of diodes; Normal propyl alcohol; The hydroxypropyl cellulose resin; And dimethyl glutarate;
J. the tenth composition, it comprises: a plurality of diodes; Normal propyl alcohol; Methoxyl group celluosic resin or hydroxypropyl cellulose resin; Dimethyl glutarate; With the dimethyl succinate ester; With
K. their mixture; And
Wherein said luminous power consumption assembly is configured to described electrical signal transfer to described a plurality of diodes; And
Wherein said equipment is for private and/or personal consumption or household consumption.
117. a lighting apparatus comprises:
The flexible base that has adhesive in the first side;
Be coupled to a plurality of first conductors of described pedestal;
Basically in parallel a plurality of light-emitting diodes on random distribution and first conductor in described a plurality of the first conductors, in described a plurality of light-emitting diode at least some have the first forward deflection orientation, and in described a plurality of light-emitting diode at least one has the second skew deviation orientation;
Be coupled to described a plurality of diode and be coupled at least one second conductor of the second conductor of described a plurality of the first conductors;
Be coupled to described at least one second conductor or one luminescent layer of stabilized zone between two parties;
Be coupled to the protective coating of described luminescent layer;
Be coupled to the electrical interface of described a plurality of the first conductors; With
Randomly can be coupled to the power supply of described electrical interface.
118. 7 described consumer's lighting apparatus according to claim 11 also comprise:
Be coupled to polymer or the resin lattice of described a plurality of light-emitting diodes.
119. 7 described lighting apparatus according to claim 11, the luminous quantity of wherein said equipment is at least about 10lm/W.
120. 7 described lighting apparatus according to claim 11, wherein said a plurality of light-emitting diodes comprise diameter be about 20 microns to about 30 microns particle mean size.
121. 7 described lighting apparatus according to claim 11, wherein said pedestal is selected from: flexible material, porous material, permeable material, transparent material, trnaslucent materials, opaque material and their mixture.
122. 7 described lighting apparatus according to claim 11, wherein said pedestal is selected from: plastics, polymeric material, natural rubber, synthetic rubber, natural fabric, synthetic textiles, glass, pottery, silicon derived material, silicon dioxide derived material, concrete, stone material, extrude polyenoid and belong to film, polymerization supatex fabric, cellulose paper wood and their mixture.
123. 7 described lighting apparatus according to claim 11, wherein said pedestal is enough to provide electric insulation and wherein said protective coating to form weather-proof sealing.
124. having, 7 described lighting apparatus according to claim 11, wherein said consumer's lighting apparatus are wound on the spool to form the form factor of consumer's luminous zone.
125. lighting apparatus according to claim 1, wherein said equipment have the average surface volume concentrations of described a plurality of light-emitting diodes of every square centimeter of about 5 to 10,000 diode.
126. 7 described lighting apparatus according to claim 11, wherein said equipment is selected from: disposable absorbent article, disposable wet wipe, burnisher and air freshener.
127. comprising, 7 described lighting apparatus according to claim 11, wherein said electrical interface are selected from following at least a interface: ES, E27, SES, E14, L1, PL – 2 pins, PL – 4 pins, G9 halogen capsule, G4 halogen capsule, GU10, GU5.3, bayonet socket and little bayonet socket.
128. one kind for lighting apparatus private and/or personal consumption or household consumption, comprising:
Translucent or transparent shell;
Be coupled to the electrical interface that described shell also can be coupled to power supply;
Pedestal;
Be coupled to described pedestal and be coupled to a plurality of first conductors of described electrical interface;
Basically in parallel a plurality of light-emitting diodes on random distribution and first conductor in described a plurality of the first conductors, in described a plurality of light-emitting diode at least some have the first forward deflection orientation, and in described a plurality of light-emitting diode at least one has the second skew deviation orientation;
Be coupled to described a plurality of diode and be coupled at least one second conductor of the second conductor of described a plurality of the first conductors;
Be coupled to described at least one second conductor or one luminescent layer of stabilized zone between two parties; With
Be coupled to the protective coating of described luminescent layer;
Wherein said equipment is for private and/or personal consumption or household consumption.
129. 8 described consumer's lighting apparatus according to claim 12 also comprise:
Be coupled to polymer or the resin lattice of described a plurality of light-emitting diodes.
130. 8 described lighting apparatus according to claim 12, the luminous quantity of wherein said equipment is at least about 10lm/W.
131. 8 described lighting apparatus according to claim 12, wherein said a plurality of light-emitting diodes comprise diameter be about 20 microns to about 30 microns particle mean size.
132. 8 described lighting apparatus according to claim 12, wherein said pedestal is selected from: flexible material, porous material, permeable material, transparent material, trnaslucent materials, opaque material and their mixture.
133. 8 described lighting apparatus according to claim 12, wherein said pedestal is selected from: plastics, polymeric material, natural rubber, synthetic rubber, natural fabric, synthetic textiles, glass, pottery, silicon derived material, silicon dioxide derived material, concrete, stone material, extrude polyenoid and belong to film, polymerization supatex fabric, cellulose paper wood and their mixture.
134. 8 described lighting apparatus according to claim 12, wherein said pedestal is enough to provide electric insulation.
135. 8 described lighting apparatus according to claim 12, wherein said protective coating forms weather-proof sealing.
136. 8 described lighting apparatus according to claim 12, wherein said equipment has the average surface volume concentrations of described a plurality of light-emitting diodes of every square centimeter of about 5 to 10,000 diode.
137. 8 described lighting apparatus according to claim 12, wherein said equipment is selected from: disposable absorbent article, disposable wet wipe, burnisher and air freshener.
138. comprising, 8 described lighting apparatus according to claim 12, wherein said electrical interface are selected from following at least a interface: ES, E27, SES, E14, L1, PL – 2 pins, PL – 4 pins, G9 halogen capsule, G4 halogen capsule, GU10, GU5.3, bayonet socket and little bayonet socket.
139. 8 described lighting apparatus according to claim 12, wherein said shell has the size that is suitable for putting into user's hand.
CN2011800424018A 2010-09-03 2011-09-02 A light emitting apparatus Pending CN103081133A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US37986010P 2010-09-03 2010-09-03
US61/379,860 2010-09-03
PCT/US2011/050292 WO2012031178A2 (en) 2010-09-03 2011-09-02 A light emitting apparatus

Publications (1)

Publication Number Publication Date
CN103081133A true CN103081133A (en) 2013-05-01

Family

ID=44651986

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011800424018A Pending CN103081133A (en) 2010-09-03 2011-09-02 A light emitting apparatus

Country Status (6)

Country Link
EP (1) EP2612354A2 (en)
JP (1) JP2014511132A (en)
CN (1) CN103081133A (en)
CA (1) CA2810394A1 (en)
MX (1) MX2013002490A (en)
WO (1) WO2012031178A2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105315792A (en) * 2015-11-18 2016-02-10 Tcl集团股份有限公司 Quantum dot printing ink and preparation method thereof and quantum dot light-emitting diode
CN107246565A (en) * 2017-08-04 2017-10-13 中节能晶和照明有限公司 A kind of LED street lamp module for being easy to safeguard
CN107369383A (en) * 2016-05-12 2017-11-21 三星显示有限公司 Rollable display
CN110500566A (en) * 2019-08-21 2019-11-26 东莞市杰伦塑胶灯饰有限公司 A kind of deformable lamp
CN111081831A (en) * 2019-11-20 2020-04-28 华南师范大学 Multi-electrode-based illumination communication device and preparation method thereof
TWI699151B (en) * 2018-10-11 2020-07-11 大陸商名碩電腦（蘇州）有限公司 Tray

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102818145B (en) * 2012-06-29 2014-10-29 王知康 Combined type LED (light-emitting diode) module without radiator, and production method thereof
CN102818146B (en) * 2012-06-29 2014-10-29 王知康 Omni-directional light emitting type plastic coated LED (light-emitting diode) module made from thin copper foil, and processing method of such LED module
US9299887B2 (en) * 2013-03-15 2016-03-29 Nthdegree Technologies Worldwide Inc. Ultra-thin printed LED layer removed from substrate
CA2999499C (en) * 2013-03-15 2020-04-07 Sonovia Holdings Llc Light and ultrasonic transducer device
BR112015026793A2 (en) * 2013-04-22 2017-10-31 Guizhou Gzgps Co Ltd LED light bulb manufacturing method
JP5961148B2 (en) * 2013-08-02 2016-08-02 富士フイルム株式会社 Method for manufacturing light emitting device
JP6010003B2 (en) * 2013-08-02 2016-10-19 富士フイルム株式会社 Light emitting device and manufacturing method thereof
US9905743B2 (en) 2013-11-21 2018-02-27 Ford Global Technologies, Llc Printed LED heat sink double lock
US10436391B2 (en) 2014-06-05 2019-10-08 Signify Holding B.V. Lighting device, luminaire and manufacturing method
US9892944B2 (en) * 2016-06-23 2018-02-13 Sharp Kabushiki Kaisha Diodes offering asymmetric stability during fluidic assembly
JP6696298B2 (en) * 2015-07-30 2020-05-20 日亜化学工業株式会社 Light emitting device and light emitting device using the same
JP6639451B2 (en) * 2016-09-15 2020-02-05 イーラックス・インコーポレイテッドｅＬｕｘ Ｉｎｃ． Display with surface mounted light emitting device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1147153A (en) * 1995-06-07 1997-04-09 加利福尼亚大学董事会 Method and apparatus for fabricating self-assembling microstructures
US20040068864A1 (en) * 1999-02-05 2004-04-15 Hadley Mark A. Web fabrication of devices
US20060134799A1 (en) * 2004-12-22 2006-06-22 Eastman Kodak Company Thermally controlled fluidic self-assembly

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030091647A1 (en) 2001-11-15 2003-05-15 Lewis Jennifer A. Controlled dispersion of colloidal suspensions via nanoparticle additions
US20050176246A1 (en) * 2004-02-09 2005-08-11 Haixin Yang Ink jet printable thick film ink compositions and processes
US7259030B2 (en) * 2004-03-29 2007-08-21 Articulated Technologies, Llc Roll-to-roll fabricated light sheet and encapsulated semiconductor circuit devices
US7557367B2 (en) * 2004-06-04 2009-07-07 The Board Of Trustees Of The University Of Illinois Stretchable semiconductor elements and stretchable electrical circuits

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1147153A (en) * 1995-06-07 1997-04-09 加利福尼亚大学董事会 Method and apparatus for fabricating self-assembling microstructures
US20040068864A1 (en) * 1999-02-05 2004-04-15 Hadley Mark A. Web fabrication of devices
US20060134799A1 (en) * 2004-12-22 2006-06-22 Eastman Kodak Company Thermally controlled fluidic self-assembly

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105315792A (en) * 2015-11-18 2016-02-10 Tcl集团股份有限公司 Quantum dot printing ink and preparation method thereof and quantum dot light-emitting diode
CN107369383A (en) * 2016-05-12 2017-11-21 三星显示有限公司 Rollable display
CN107246565A (en) * 2017-08-04 2017-10-13 中节能晶和照明有限公司 A kind of LED street lamp module for being easy to safeguard
TWI699151B (en) * 2018-10-11 2020-07-11 大陸商名碩電腦（蘇州）有限公司 Tray
CN110500566A (en) * 2019-08-21 2019-11-26 东莞市杰伦塑胶灯饰有限公司 A kind of deformable lamp
CN111081831A (en) * 2019-11-20 2020-04-28 华南师范大学 Multi-electrode-based illumination communication device and preparation method thereof

Also Published As

Publication number Publication date
WO2012031178A3 (en) 2012-10-18
MX2013002490A (en) 2013-11-20
JP2014511132A (en) 2014-05-08
WO2012031178A2 (en) 2012-03-08
CA2810394A1 (en) 2012-03-08
EP2612354A2 (en) 2013-07-10

Similar Documents

Publication Publication Date Title
CN103081133A (en) A light emitting apparatus
US20130175515A1 (en) Light emitting apparatus
US20140198532A1 (en) Light emitting apparatus
CN103633222B (en) Diode, the liquid of diode or other two ends ICs or soliquid print constituent and preparation method thereof
US9200758B2 (en) LED lighting apparatus formed by a printable composition of a liquid or gel suspension of diodes and methods of using same
US9713254B2 (en) Device components with surface-embedded additives and related manufacturing methods
US20130175556A1 (en) Light emitting apparatus
US8846457B2 (en) Printable composition of a liquid or gel suspension of diodes
US20140370629A1 (en) Method of Manufacturing a Printable Composition of a Liquid or Gel Suspension of Diodes
CN105895803A (en) Perovskite photoelectric device and preparation method thereof and perovskite material
JP2004207236A (en) Large-sized organic device and manufacturing method of the same
JP2013542601A (en) Insulating glass (IG) unit or vacuum insulating glass (VIG) unit provided with light source and / or method for manufacturing the same
CN102695914A (en) Light emitting, photovoltaic or other electronic apparatus and system and method of making same
US8674593B2 (en) Diode for a printable composition
TW201216370A (en) Diode for a printable composition
CN103582962B (en) Device for emitting light or generating power
US20130175516A1 (en) Light emitting apparatus
CN104896326B (en) Artistic lamp
CN104819399B (en) Ornament lamp

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20130501